CN109844948A - Display light-emitting diode (LED) module component - Google Patents
Display light-emitting diode (LED) module component Download PDFInfo
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- CN109844948A CN109844948A CN201880002168.2A CN201880002168A CN109844948A CN 109844948 A CN109844948 A CN 109844948A CN 201880002168 A CN201880002168 A CN 201880002168A CN 109844948 A CN109844948 A CN 109844948A
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- 239000000758 substrate Substances 0.000 claims abstract description 150
- 230000031700 light absorption Effects 0.000 claims abstract description 92
- 239000000463 material Substances 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 15
- 230000008033 biological extinction Effects 0.000 claims description 11
- 239000003086 colorant Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000001721 transfer moulding Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 210000004209 hair Anatomy 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000003738 black carbon Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/13—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Abstract
The invention discloses the display light-emitting diode (LED) module components for including the first light-emitting diode (LED) module and the second light-emitting diode (LED) module.For the light-emitting diode (LED) module component, above-mentioned first light-emitting diode (LED) module and above-mentioned second light-emitting diode (LED) module include: substrate comprising the first unit substrate and the second unit substrate being bonded between side；Multiple light-emitting diode chip for backlight unit, are assemblied on aforesaid substrate and form multiple pixels；And light-absorption layer, it includes the first light-absorption layer being formed in above-mentioned first unit substrate and the second light-absorption layer for being formed in above-mentioned second unit substrate, and, above-mentioned light-absorption layer includes the multiple paddy (valley) being formed between multiple pixels, above-mentioned first light-absorption layer and above-mentioned second light-absorption layer include: the first rake and the second rake, its interface upper end-face edge between the first unit substrate and above-mentioned second unit substrate is connected obliquely towards the respective side surface upper part of gabarit light-emitting diode chip for backlight unit in above-mentioned first unit substrate and above-mentioned second unit substrate, at least one of above-mentioned multiple paddy adjoin one another to be formed with above-mentioned second rake by above-mentioned first rake.
Description
Technical field
The present invention relates to a kind of light-emitting diode (LED) module components, in more detail, are related to a kind of light-emitting diode (LED) module component,
It is bonded to be formed by the side of light-emitting diode (LED) module each other, further, it is possible to prevent the connection in light-emitting diode (LED) module
The color of the light at position is interfered or the diffusing reflection of light, to realize seamless (seamless) display characteristic.
Background technique
A kind of technology has been disclosed at present, is connected to each other by the side of multiple light-emitting diode (LED) modules and constitutes one
A light-emitting diode (LED) module component.This existing light-emitting diode (LED) module component is suitable for light emitting display device.
As shown in Figure 1, existing light-emitting diode (LED) module component includes multiple light-emitting diode (LED) modules that side is connected to each other
2.Multiple light-emitting diode (LED) modules 2 respectively include: unit substrate 22；Multiple light-emitting diode chip for backlight unit 24a, 24b, 24c, assembly
Multiple pixels are formed in above-mentioned unit substrate 22；And black forms portion (molding) 26, passes through extruding
(squeezing) technique or transfer molding (transfer molding) technique are all to cover above-mentioned multiple light-emitting diodes tube cores
The upper surface of piece 24a, 24b, 24c and the mode of side are formed in above-mentioned unit substrate 22.Black forming part 26 utilizes mixing
There is the resin material of black carbon and is formed by transfer molding technique.The purpose for providing black forming part 26 is: reducing from R, G, B
Color caused by the side light that the side of light-emitting diode chip for backlight unit is projected is interfered, the black color of display is presented.
Above-mentioned multiple light-emitting diode (LED) modules 2 are multiple by the way that a big light-emitting diode (LED) module material separation to be cut into
Module and formed, therefore, the side of unit substrate 22 is respectively formed with by multiple light-emitting diode (LED) modules 2 that the cutting is formed
Side with black forming part 26 is as cut surface.The case where this light-emitting diode (LED) module component is suitable for display device
Under, when driving display device, as shown in Fig. 2, the interconnecting piece between light-emitting diode (LED) module 2 has a common boundary, meeting is it is obvious that thus big
Display quality is reduced greatly.The reason of generating phenomenon as above first is that: for example, being generated in above-mentioned multiple light-emitting diode (LED) modules
Light generated caused by diffusing reflection in the cut surface of the black forming part 26 by the formation such as sawing (sawing).Also, work as
When being applicable in transfer molding technique to form black forming part 26, exists and need asking for the free space for compression mould
Moreover, black forming part 26 is also by the top of covering luminousing diode chip, therefore there is the light quantity issued and reduce and efficiency in topic
The problem of reduction.Alternatively, in order to form black forming part 26, it can be applicable in extrusion process, however, when being applicable in this extruding
When technique, there are problems that being difficult to keep the height tolerance of black forming part and flatness.
Also, when the spacing on the interconnecting piece boundary formed by the engagement of cut surface and cut surface is than above-mentioned multiple light-emitting diodes
When spacing between pipe is wide, there are problems that above-mentioned interconnecting piece boundary is formed as the shape such as lines.
Summary of the invention
The technical problem to be solved in the present invention
The problem to be solved in the present invention is to provide a kind of light-emitting diode (LED) module components, pass through light-emitting diode (LED) module
Side is bonded each other and is formed, and can prevent from generating color interference or the light of light in the connecting portion of light-emitting diode (LED) module
Diffusing reflection, also, the spacing on above-mentioned interconnecting piece boundary is reduced into it is identical as multiple pel spacings, to realize seamless
(seamless) display characteristic.
Technical solution
According to an aspect of the present invention, providing a kind of includes the first light-emitting diode (LED) module and the second light-emitting diode (LED) module
Display light-emitting diode (LED) module component, above-mentioned first light-emitting diode (LED) module and above-mentioned second light-emitting diode (LED) module packet
It includes: substrate comprising the first unit substrate and the second unit substrate being bonded between side；Multiple light-emitting diode chip for backlight unit,
It is assemblied on aforesaid substrate and forms multiple pixels；And light-absorption layer comprising be formed in above-mentioned first unit substrate
One light-absorption layer and the second light-absorption layer being formed in above-mentioned second unit substrate, also, above-mentioned light-absorption layer is multiple including being formed in
Multiple paddy (valley) between pixel, also, above-mentioned first light-absorption layer and above-mentioned second light-absorption layer include the first rake and
Second rake, towards above-mentioned near the interface upper end-face edge between the first unit substrate and above-mentioned second unit substrate
The respective side surface upper part of gabarit light-emitting diode chip for backlight unit of first unit substrate and above-mentioned second unit substrate is connected obliquely, and
And at least one of above-mentioned multiple paddy are formed by above-mentioned first rake and above-mentioned second rake.
According to one embodiment, above-mentioned light-absorption layer includes the paddy between chip, is formed in each above-mentioned multiple pixels
In adjacent two light-emitting diode chip for backlight unit between.
According to one embodiment, it is preferable that the width of above-mentioned paddy is greater than the width of the paddy between said chip.
According to one embodiment, above-mentioned light-absorption layer will be by that will include black color material (Black color materials)
Liquid or the material of gel (gel) shape be coated on aforesaid substrate and formed.
According to one embodiment, side upper end-face edge direction and aforesaid substrate of the above-mentioned paddy from above-mentioned light-emitting diode chip for backlight unit
The lower end of the closest paddy in surface is connected obliquely.
According to one embodiment, center of the lower end of above-mentioned paddy between two adjacent light-emitting diode chip for backlight unit.
According to one embodiment, above-mentioned first unit substrate and above-mentioned second unit substrate include being formed in be bonded each other
The light absorption unit of side.
According to one embodiment, above-mentioned light absorption unit, which passes through, is coated on above-mentioned first unit base for the material with light absorbing colours
The side of plate and the side of above-mentioned second unit substrate and formed.
According to one embodiment, at least one Gu Yiyu in above-mentioned multiple paddy is previously formed in above-mentioned first unit substrate
Or the mode of the extinction pattern film contact of above-mentioned second unit substrate is formed.
According to one embodiment, the Gu Yiyu between said chip is previously formed in above-mentioned first unit substrate or above-mentioned
The mode of the extinction pattern film contact of second unit substrate is formed.
According to one embodiment, above-mentioned multiple light-emitting diode chip for backlight unit face-down bondings above-mentioned first unit substrate or on
It states in the second unit substrate.
According to one embodiment, the side of above-mentioned first unit substrate and above-mentioned second unit substrate can be vertical cutting
Face.
According to one embodiment, each surface of above-mentioned multiple light-emitting diode chip for backlight unit is to have the upper end with above-mentioned paddy
The mode of identical height is exposed to outside.
According to one embodiment, it is preferable that be formed in above-mentioned by above-mentioned first rake and above-mentioned second rake
The spacing of the paddy of boundary between one light-emitting diode (LED) module and above-mentioned second light-emitting diode (LED) module, with only it is above-mentioned first hair
Adjacent to each other two on any one light-emitting diode (LED) module in optical diode module and above-mentioned second light-emitting diode (LED) module
The spacing of another paddy formed between pixel is identical.
According to one embodiment, above-mentioned first light-emitting diode (LED) module and above-mentioned second light-emitting diode (LED) module further include shape
At above-mentioned first light-absorption layer the first photic zone and be formed in the second photic zone of above-mentioned second light-absorption layer.
According to one embodiment, above-mentioned first photic zone and above-mentioned second photic zone respectively include: connect with above-mentioned multiple paddy
First face of touching；And it is formed flatly in the second face of the opposite side in above-mentioned first face.
Light-emitting diode (LED) module component according to a further aspect of the invention includes the first light-emitting diode (LED) module and the second hair
Optical diode module, also, above-mentioned first light-emitting diode (LED) module and above-mentioned second light-emitting diode (LED) module include: substrate,
Including the first unit substrate and the second unit substrate being bonded between side；Multiple light-emitting diode chip for backlight unit are assemblied in above-mentioned
On substrate；And light-absorption layer comprising the first light-absorption layer for being formed in above-mentioned first unit substrate and be formed in above-mentioned second
The second light-absorption layer in unit substrate, also, above-mentioned light-absorption layer include be formed in it is multiple between multiple light-emitting diode chip for backlight unit
Paddy (valley) between chip, above-mentioned first light-absorption layer and above-mentioned second light-absorption layer include: the first rake and the second inclination
Portion, the interface upper end-face edge (edge) between the first unit substrate and above-mentioned second unit substrate are single towards above-mentioned first
The respective side surface upper part of gabarit light-emitting diode chip for backlight unit of position substrate and above-mentioned second unit substrate is connected obliquely, above-mentioned multiple
At least one of paddy adjoins one another to be formed with above-mentioned second rake by above-mentioned first rake.
Beneficial effect
Light-emitting diode (LED) module component according to the present invention is bonded to be formed by the side of light-emitting diode (LED) module each other,
Further, it is possible to the color interference or the diffusing reflection of light in the light of the connecting portion of light-emitting diode (LED) module be prevented, to realize nothing
Stitch (seamless) display characteristic.
More specifically, in the present invention, the light-absorption layer provided in the form of underfill (underfill) include multiple pixels it
Between paddy and chip between paddy, also, since the connecting portion of two light-emitting diode (LED) modules also has the paddy between pixel,
Therefore it can be improved the nothing of the cut surface connecting portion by sawing (sawing) light-emitting diode (LED) module with cut surface
Stitch characteristic.It generates serious irreflexive existing with the cut surface in the black forming part by formation such as sawing (sawing)
Technology is different, in the present invention, in the part by sawing, scribing (scribing) or (breaking) formation cut surface that fractures
It is pre-formed paddy, so that diffusing reflection is also less even if forming above-mentioned cut surface, it is possible thereby to improve light efficiency.
Also, in the present invention, since the extinction material including for example black color is not present in light-emitting diode chip for backlight unit top, because
This has the effect of improving light quantity.Moreover, with include by extrusion process formed black forming part light-emitting diode (LED) module
Component is compared, and light-emitting diode (LED) module component according to the present invention has the advantages that height tolerance can be managed easily.
Also, when forming black forming part by extruding or transfer molding, after forming black forming part, Wu Fajin
Row is repaired or amendment, but the present invention can only select defect part and place under repair or correct.Yield is improved as a result, and is reduced
Producing cost.
Detailed description of the invention
Fig. 1 and Fig. 2 is the figure for illustrating the prior art.
Fig. 3 is the cross-sectional view for illustrating light-emitting diode (LED) module component according to an embodiment of the invention.
Fig. 4 is the top view for illustrating light-emitting diode (LED) module component according to an embodiment of the invention.
Fig. 5 is the figure for showing the circle " A " of enlarged drawing 3.
Fig. 6 is the figure for showing the circle " B " of enlarged drawing 3.
Fig. 7 is the figure for illustrating another embodiment of the invention.
Fig. 8 is the figure for illustrating the light-emitting diode (LED) module component of further embodiment according to the present invention.
Fig. 9 to 12 is the figure for the manufacturing method for illustrating to be shown in the light-emitting diode (LED) module of Fig. 8.
Specific embodiment
Hereinafter, referring to attached drawing, preferred embodiment of the present invention will be described.Attached drawing and explanation about attached drawing be in order to
Facilitate those skilled in the art understand that of the invention and proposition.Therefore, attached drawing and explanation are not construed as limiting this hair
Bright range.
Fig. 3 to Fig. 6 is the figure for illustrating light-emitting diode (LED) module component according to an embodiment of the invention.
As shown in Figures 3 to 6, display light-emitting diode (LED) module component according to an embodiment of the invention includes side
Multiple light-emitting diode (LED) modules 100 that face is bonded each other.Above-mentioned multiple light-emitting diode (LED) modules 100 include the first light emitting diode
Module 100, the second light-emitting diode (LED) module 100 ... and the n-th light-emitting diode (LED) module.For ease of description, by multiple hairs
Two light-emitting diode (LED) modules configured adjacent to each other in optical diode module be referred to as the first light-emitting diode (LED) module 100 and
Second light-emitting diode (LED) module 100 is distinguished, but the appended drawing reference of component uses identical appended drawing reference.
Above-mentioned light-emitting diode (LED) module component includes substrate, which includes as the first light-emitting diode (LED) module 100
First unit substrate 110 of a part and second unit substrate of a part as above-mentioned second light-emitting diode (LED) module 100
110.By the way that the side of above-mentioned first light-emitting diode (LED) module 100 and above-mentioned second light-emitting diode (LED) module 100 is bonded each other,
The side of above-mentioned first unit substrate 110 and above-mentioned second unit substrate 110 is also bonded each other.Also, above-mentioned first luminous two
Pole pipe module 100 and above-mentioned second light-emitting diode (LED) module 100 include multiple light-emitting diode chip for backlight unit 121,122,123, are led to
It crosses and is assemblied in above-mentioned first unit substrate 110 and above-mentioned second unit substrate 110 and forms multiple pixels 120.Also, it is above-mentioned
First light-emitting diode (LED) module 100 and above-mentioned second light-emitting diode (LED) module 100 include being formed in above-mentioned first unit substrate 110
On the first light-absorption layer 130 and the second light-absorption layer 130 for being formed in above-mentioned second unit substrate 110.At this point, above-mentioned unit base
Plate 110 can be selected from for example, printed circuit board (Printed Circuit Board, PCB), flexible (flexible) substrate (example
Such as, flexible print circuit board (Flexible Printed Circuit Board, FPCB)), transparent organic matter substrate.
Light-absorption layer including above-mentioned first light-absorption layer 130 and above-mentioned second light-absorption layer 130 be for example, have can extinction it is black
The light-absorption layer of color, can not only provide the black color of display by the structure that will be detailed below, and can be with
Color caused by the side light by light-emitting diode chip for backlight unit 121,122,123 is eliminated to interfere to improve display image quality.Also, with it is preceding
The black forming part for the prior art that face is mentioned is different, and above-mentioned light-absorption layer is not in the upper of light-emitting diode chip for backlight unit 121,122,123
Portion face is formed, so that light quantity is hardly reduced, in particular, when driving the display, can be realized and can't see the seamless of connecting sewing
Characteristic.
Above-mentioned first light-emitting diode (LED) module 100 and above-mentioned second light-emitting diode (LED) module 100 can shine from one big
The cutting (not shown) of diode die block of material is separated and is formed, which includes number bigger than unit substrate
Times or more large substrates (not shown) and assembly many a light-emitting diode chip for backlight unit on the substrate.Also, above-mentioned first is single
Each side of position substrate 110 and above-mentioned second unit substrate 110 is formed by the vertical cut surface formed by above-mentioned cutting.And
And the interface formed with above-mentioned second unit substrate 110 in above-mentioned first unit substrate 110, formed by vertical cut surface
Side be formed with light absorption unit 112.Above-mentioned light absorption unit 112 can be by that will have the material of light absorbing colours, for example, black ink
(Black ink) etc. is applied to the side of above-mentioned first unit substrate 110 and the side of above-mentioned second unit substrate 110 and shape
At.
On the other hand, multiple pixels 120 arrange (array) in above-mentioned first unit substrate respectively in a manner of matrix array
110 and above-mentioned second unit substrate 110 on.Above-mentioned pixel 120 respectively includes red light emitting diodes chip 121, green emitting
Diode chip for backlight unit 122 and blue led chips 123.Also, light-emitting diode chip for backlight unit 121 in above-mentioned pixel 120,
122,123, i.e. red light emitting diodes chip 121, green LED chip 122 and blue led chips
123 configure in a manner of across regulation spacing.Also, above-mentioned light-emitting diode chip for backlight unit 121,122,123 passes through flip chip bonding
It meets (flip chip bonding) and is assemblied in above-mentioned unit substrate 110, therefore, above-mentioned light-emitting diode chip for backlight unit 121,122,123
Top does not have bonding wire (bonding wire).Also, it, can for above-mentioned light-emitting diode chip for backlight unit 121,122,123 etc.
Vertical-type chip is assembled in above-mentioned unit substrate 110, to make above-mentioned 121,122,123 top of light-emitting diode chip for backlight unit that there is weldering
Line, or do not have bonding wire.
Shown in Fig. 4 as shown in the best way, in each light-emitting diode (LED) module 100, pixel 120 is with defined cross
It is arranged to spacing a and defined longitudinal pitch b.In other words, it can be each of first or second light-emitting diode (LED) module
In light-emitting diode (LED) module 100, the horizontal spacing between laterally pixel 120,120 adjacent to each other is defined as a, will it is longitudinal that
Longitudinal pitch between this adjacent pixel 120,120 is defined as b.At this point, being bonded each other in multiple light-emitting diode (LED) modules 100
In the state of, the cross between adjacent two pixel between lateral two light-emitting diode (LED) modules 100,100 adjacent to each other
It is similarly a to spacing, the spacing a between the pixel in above-mentioned light-emitting diode (LED) module is identical, also, longitudinal adjacent to each other
Two light-emitting diode (LED) modules 100,100 between adjacent two pixel between longitudinal pitch be similarly b, and it is above-mentioned
Spacing b between pixel in light-emitting diode (LED) module is identical.Therefore, no matter two laterally adjacent pixels shine identical
Diode (led) module, or two between different light-emitting diode (LED) modules laterally adjacent to each other, two laterally adjacent pixels
The paddy width between pixel formed between a adjacent LED chip (121 and 121,122 and 122,123 and 123)
(vally width) is all the same, also, no matter two longitudinally adjacent pixels are in identical light-emitting diode (LED) module, or
Longitudinal different light-emitting diode (LED) modules adjacent to each other, two adjacent LED cores between two longitudinally adjacent pixels
The paddy width between pixel formed between piece 121,123 is all the same.
Referring again to Fig. 3 to Fig. 6, in the substrate including above-mentioned first unit substrate 110 and above-mentioned second unit substrate 110
Upper formation light-absorption layer 130, wherein above-mentioned light-absorption layer 130 includes: the first extinction being formed in above-mentioned first unit substrate 110
Layer 130 and the second light-absorption layer 130 being formed in above-mentioned second unit substrate 110.Also, above-mentioned light-absorption layer 130 includes being formed
Multiple paddy (valley) 132 between multiple pixels 120, more specifically, including the paddy 132 between pixel.
Above-mentioned multiple paddy 132 are respectively formed at adjacent two light-emitting diode chip for backlight unit between two adjacent pixels
123, between 121.Also, above-mentioned light-absorption layer includes the paddy 133 between chip, and the paddy 133 between the chip is formed on each
State adjacent two light-emitting diode chip for backlight unit in multiple pixels 120 (between 121 and 122 or 122 and 123).
The spacing between two adjacent light-emitting diode chip for backlight unit 123,121 between adjacent two pixels 120,120
Greater than the spacing between two adjacent light-emitting diode chip for backlight unit (121 and 122 or 122 and 123) in each pixel 120,
Therefore, the width for being formed in the paddy 132 between adjacent two pixels 120,120 is set to be greater than in each pixel 120
Two adjacent light-emitting diode chip for backlight unit (121 and 122 or 122 and 123) between paddy 133 between the chip that is formed width
Degree.
Paddy 132 between above-mentioned pixel is with from end edge on the side of the gabarit light-emitting diode chip for backlight unit 121 or 123 in pixel
Under paddy between the edge direction pixel closest with the surface of above-mentioned first unit substrate 110 or the second unit substrate 110
End 132a angled and slightly curved mode realizes connection.At this point, the lower end 132a of the paddy between above-mentioned pixel can be located at phase
The center between adjacent two light-emitting diode chip for backlight unit 123,121 between adjacent two pixels 120,120.At this point, optimal
Selection of land, the lower end 132a of the paddy between above-mentioned pixel substantially with above-mentioned first unit substrate 110 or above-mentioned second unit base
The surface of plate 110 contacts.
Also, the paddy 133 between said chip is with from the side upper end-face edge court of light-emitting diode chip for backlight unit 121,122,123
The lower end of paddy between the chip closest to the surface of above-mentioned first unit substrate 110 or the second unit substrate 110
133a angled and slightly curved mode realizes connection.At this point, the lower end 133a of the paddy between said chip can be located at it is adjacent
Pixel 120 in adjacent two light-emitting diode chip for backlight unit (121 and 122 or 122 and 123) between center.At this point, optimal
Selection of land, the lower end 133a of the paddy between said chip substantially with above-mentioned first unit substrate 110 or above-mentioned second unit base
The surface of plate 110 contacts.
At this time, it is preferable that the depth of the paddy 132 between pixel is deeper than the depth of the paddy 133 between said chip.
In particular, according to the present invention, above-mentioned first light-absorption layer 130 and above-mentioned second light-absorption layer 130 include the first rake
134a and the second rake 134b, the first rake 134a and the second rake 134b from the first unit substrate 110 with it is above-mentioned
The upper end-face edge of interface between second unit substrate 110 is towards above-mentioned first unit substrate 110 and above-mentioned second unit base
Gabarit light-emitting diode chip for backlight unit (121 or 123) respective side surface upper part in pixel on plate 110 is connected obliquely.First inclines
Inclined portion 134a and the second rake 134b are formed symmetrically to each other on the basis of interface, and one is formed when adjoining one another
Paddy 134 between a pixel.Paddy 134 between the pixel provide above-mentioned first unit substrate 110 that is previously mentioned with it is above-mentioned
Between second unit substrate 110, thus with providing in above-mentioned first unit substrate 110 or above-mentioned second unit substrate 110
Multiple pixels between paddy 134 constitute the paddy 133,134 between multiple pixels together.Preferably, the first light-absorption layer 130 with
Between second light-absorption layer 130, by the paddy between the first rake 134a and the pixel for connecting and being formed of the second rake 134b
134 have the paddy 134 between the pixel for being formed in the first light-absorption layer 130 or above-mentioned second light-absorption layer 130 itself identical
Shape and identical size.
At this point, above-mentioned light-absorption layer 130 can be by will include the liquid of black color material with spraying method or gelatinous
Resin material is coated in above-mentioned first unit substrate 110 and above-mentioned second unit substrate 110 and is formed.By the first rake
134a is with the paddy 134 for connecting and being formed of above-mentioned second rake 134b equally from the side upper end of above-mentioned light-emitting diode chip for backlight unit
Edge is connected obliquely towards the lower end with the immediate paddy in aforesaid substrate surface.Above-mentioned black color material for example can be black carbon
(Black carbon)。
When with spraying method by include black color material liquid or gelatinous resin material be coated on be equipped with it is above-mentioned
When the first unit substrate 110 and the second unit substrate 110 of multiple light-emitting diode chip for backlight unit 121,122,123, above-mentioned liquid or
The gelatinous resin material of person is filled between light-emitting diode chip for backlight unit between adjacent pixel or in pixel, to be formed
Light-absorption layer 130 above-mentioned.Pass through surface tension liquid possessed by liquid perhaps gelatinous resin or gelatinous resin
All flow to side from the upper surface of light-emitting diode chip for backlight unit 121,122,123, as a result, light-emitting diode chip for backlight unit 121,122,
123 upper surface is exposed to outside.Therefore, the upper surface of above-mentioned light-emitting diode chip for backlight unit 121,122,123 with have with it is above-mentioned
The mode of the identical height in upper end of paddy 132,133 is exposed to outside.Due to above-mentioned light-emitting diode chip for backlight unit 121,122,123
Light-absorption layer is not present in upper surface, therefore can prevent from projecting by the upper surface of above-mentioned light-emitting diode chip for backlight unit 121,122,123
Light by light-absorption layer absorb caused by efficiency reduce.
Fig. 7 is for illustrating the figure according to the light-emitting diode (LED) module component for inventing another embodiment.
Referring to Fig. 7 it is found that for the light-emitting diode (LED) module component according to the present embodiment, substrate, more specifically, the
One or second unit substrate 110 at an upper portion thereof face include extinction pattern film 115.Except with light-emitting diode chip for backlight unit 121,122,
Except 123 electrode pattern of electrode pad connection etc., the exposing surface of the extinction pattern film 115 to cover aforesaid substrate 110
Mode be pre-formed, above-mentioned extinction pattern film can be black series photosensitive solder resist agent (Photo Solder Resist,
) or black belt (Black tape) PSR.Also, same as the previously described embodimentsly, light-absorption layer 130 includes: between pixel
Paddy 132 is located at adjacent between adjacent two pixel in the first unit substrate 110 or the second unit substrate 110
Two light-emitting diode chip for backlight unit 123,121 between；Paddy 133 between chip, be located in above-mentioned first unit substrate 110 or
Between two light-emitting diode chip for backlight unit (121 and 122 or 122 and 123) in specific pixel in second unit substrate 110；
Paddy 134 (referring to Fig. 3) between one other pixel, is located in above-mentioned first unit substrate 110 and above-mentioned second unit substrate
Between adjacent two light-emitting diode chip for backlight unit 123,121 between 110 between two adjacent pixels, wherein above-mentioned pixel
Between paddy and said chip between paddy formed in such a way that the lower end in paddy is contacted with extinction pattern film 115.This structure
A possibility that lower end of paddy being blocked in advance to be opened and expose substrate surface, and light-emitting diode (LED) module component can be made
Uniform black color is realized on the whole.
Fig. 8 is the figure for illustrating display light-emitting diode (LED) module component in accordance with another embodiment of the present invention.
As shown in figure 8, with light-emitting diode (LED) module component including being pasted each other between side according to the display of the present embodiment
The multiple light-emitting diode (LED) modules 100 closed.Above-mentioned multiple light-emitting diode (LED) modules 100 include the first light-emitting diode (LED) module 100,
Second light-emitting diode (LED) module 100 ... and the n-th light-emitting diode (LED) module.
Above-mentioned light-emitting diode (LED) module component includes: substrate comprising multiple first units being bonded each other between side
Substrate 110 and the second unit substrate 110；Multiple pixels 120, are arranged on aforesaid substrate, and including being respectively assembled on
State the first unit substrate 110 or red light emitting diodes chip 121, green emitting two in above-mentioned second unit substrate 110
Pole pipe chip 122 and blue led chips 123；First light-absorption layer 130 and the second light-absorption layer 130, the first light-absorption layer
130 are formed in above-mentioned first unit substrate 110, and the second light-absorption layer 130 is formed in above-mentioned second unit substrate 110；First
Photic zone 140 and the second photic zone 140, the first photic zone 140 are formed on above-mentioned first light-absorption layer 130, the second photic zone 140
It is formed on above-mentioned second light-absorption layer 130.Above-mentioned light-absorption layer is by including the first molding for being mixed with the resin material of reflecting material
Material is formed, and above-mentioned photic zone is by including translucent resin material and excellent the second moulding material of translucency is formed.
Remaining structure other than above-mentioned photic zone 140 is identical or substantially similar as the above embodiments, therefore to it
Omit additional explanation.
As described in the above embodiment, above-mentioned light-absorption layer 130 includes: the concave shape between adjacent light-emitting diode chip for backlight unit
At chip between paddy or the pixel of formation that is recessed between adjacent pixel between paddy.When in above-mentioned light-absorption layer 130
And light-emitting diode chip for backlight unit 121,122,123 upper face adhere to light polarizing film when, generate rough face because of this paddy,
In turn, light polarizing film can not be adhered on the whole, to generate gap between light-absorption layer and light polarizing film.However, above-mentioned
Photic zone 140 includes: lower surface, on the whole with the light-absorption layer of the paddy between the paddy or pixel that are formed between chip
130 upper face contact；And flat upper face on the whole.To in the lower part of above-mentioned photic zone 140, filled up because
The paddy between paddy or pixel and the upper face of rough light-absorption layer 130 between chip, and above-mentioned photic zone 140
Top provides flat surface.Also, it can adhere to such as light polarizing film on the flat surface.
Referring to Fig. 9 to Figure 12, the surface on surface and light-absorption layer 130 to covering luminousing diode chip 121,122,123
The forming method of photic zone 140 be illustrated.
Firstly, as shown in figure 9, preparing the light-emitting diode (LED) module 100 as described in above-described embodiment.LED die
Block 100 includes: unit substrate 110；Red, green and blue led chips 121,122,123, are formed in unit
Substrate 110 and constitute multiple pixels；Light-absorption layer 130, between adjacent light-emitting diode chip for backlight unit and adjacent pixel it
Between, the mode for limiting the paddy between paddy and pixel between chip is formed.Above-mentioned light-absorption layer 130 passes through by being mixed with reflexive material
Material resin material composition one-pass molding liquid solidification (curing) and have its form.Also, as shown in figure 9, any
Film 200 upper side be coated with post forming liquid 140'.Post forming liquid 140' can be the liquid resin with translucency
(for example, silicone resin).
Then, as shown in Figure 10, the periphery of post forming liquid 140' is blocked by obstruction (dam) 300.It can be at as a result,
The state of post forming liquid 140' is filled in the space for being defined in 300 inside of obstruction.It should be noted that can also first shape
After obstruction 300, post forming liquid 140' is coated with to the space of 300 inside of dykes and dams.Then, light-absorption layer will be formed with
The light-emitting diode (LED) module above-mentioned 100 of 130 (with the paddy between chip and the paddy between pixel) is overturn, thus make it is red,
Green and the upper face of blue led chips 121,122,123 and the upper face of light-absorption layer 130 are to be immersed in two
The mode of secondary shaping dope 140' configures.Later, as shown in Figure 11 and 12, by the way that post forming liquid 140' is solidified, thus
Form photic zone 140 comprising: it is connect with the surface of above-mentioned light-absorption layer 130 (including the paddy between chip and the paddy between pixel)
The rough one side of touching；And the flat surface contacted with the surface of film 200.Then, above-mentioned film 200 is removed.
When the end face of the end face of photic zone 140 and unit substrate 110 not in the same plane when, unit can be cut
A part of 110 end of substrate, so as to photic zone 140 end face and unit substrate 110 end face in the same plane.
Description of symbols
110: substrate, the first unit substrate, the second unit substrate
120: pixel
121,122,123: light-emitting diode chip for backlight unit
130: light-absorption layer, the first light-absorption layer, the second light-absorption layer
132,134: the paddy between paddy, pixel
140: photic zone, the first photic zone, the second photic zone
Claims (20)
1. a kind of display light-emitting diode (LED) module component, being includes the first light-emitting diode (LED) module and the second light-emitting diodes
The display of tube module light-emitting diode (LED) module component, which is characterized in that
First light-emitting diode (LED) module and second light-emitting diode (LED) module include:
Substrate comprising the first unit substrate and the second unit substrate that side is bonded to each other；
Multiple light-emitting diode chip for backlight unit, assembly form multiple pixels on the substrate；And
Light-absorption layer comprising the first light-absorption layer for being formed in first unit substrate and be formed in second unit substrate
On the second light-absorption layer,
Also, the light-absorption layer includes the multiple paddy being formed between multiple pixels, and first light-absorption layer and described second inhale
Photosphere includes the first rake and the second rake, at least one paddy in the multiple paddy is by first rake and described
Second rake is formed.
2. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
The light-absorption layer includes the paddy between chip, is formed in adjacent two luminous two in each the multiple pixel
Between pole pipe chip.
3. display according to claim 2 light-emitting diode (LED) module component, which is characterized in that
The width of the paddy is greater than the width of the paddy between the chip.
4. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
The light-absorption layer is coated with shape on the substrate by the liquid that will include black color material or gelatinous material
At.
5. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
Under the paddy is from the side upper end-face edge of the light-emitting diode chip for backlight unit towards the paddy closest with the substrate surface
End is connected obliquely.
6. display according to claim 5 light-emitting diode (LED) module component, which is characterized in that
Center of the lower end of the paddy between two adjacent light-emitting diode chip for backlight unit.
7. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
First unit substrate and second unit substrate include the light absorption unit for being formed in the side being bonded each other.
8. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
The light absorption unit passes through the side and described second that the material with light absorbing colours is coated on to first unit substrate
The side of unit substrate and formed.
9. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
At least one Gu Yiyu in the multiple paddy is previously formed in first unit substrate or the second unit base
The mode of the extinction pattern film contact of plate is formed.
10. display according to claim 2 light-emitting diode (LED) module component, which is characterized in that
Gu Yiyu between the chip is previously formed in the extinction of first unit substrate or second unit substrate
The mode of pattern film contact is formed.
11. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
The multiple light-emitting diode chip for backlight unit face-down bonding is in first unit substrate or second unit substrate.
12. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
The side of first unit substrate and second unit substrate is vertical cut surface.
13. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
Exposed in such a way that there is height identical with the upper end of the paddy on the surface of each the multiple light-emitting diode chip for backlight unit
In outside.
14. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
First light-emitting diode (LED) module and described second is formed in by first rake and second rake
The spacing of the paddy of boundary between light-emitting diode (LED) module, with only first light-emitting diode (LED) module and it is described second shine
The spacing of another paddy formed between two pixels adjacent to each other on any one light-emitting diode (LED) module in diode (led) module
It is identical.
15. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
First light-emitting diode (LED) module and second light-emitting diode (LED) module further include being formed in first light-absorption layer
The first photic zone and be formed in the second photic zone of the second light-absorption layer.
16. display according to claim 15 light-emitting diode (LED) module component, which is characterized in that
First photic zone and second photic zone respectively include: the first face contacted with the multiple paddy；And flatly
It is formed in the second face of the opposite side in first face.
17. a kind of display light-emitting diode (LED) module component, being includes the first light-emitting diode (LED) module and second luminous two
The display of pole pipe module light-emitting diode (LED) module component, which is characterized in that
First light-emitting diode (LED) module and second light-emitting diode (LED) module include:
Substrate comprising the first unit substrate and the second unit substrate that side is bonded to each other；
Multiple light-emitting diode chip for backlight unit, assembly is on the substrate；And
Light-absorption layer comprising the first light-absorption layer for being formed in first unit substrate and be formed in second unit substrate
On the second light-absorption layer,
Also, the light-absorption layer includes the paddy between the multiple chips being formed between multiple light-emitting diode chip for backlight unit,
First light-absorption layer and second light-absorption layer include: the first rake and the second rake, from the first unit base
Interface upper end-face edge between plate and second unit substrate is towards first unit substrate and the second unit base
The respective side surface upper part of gabarit light-emitting diode chip for backlight unit on plate is connected obliquely,
At least one paddy in the multiple paddy is formed by first rake and second rake.
18. display according to claim 1 light-emitting diode (LED) module component, which is characterized in that
First light-emitting diode (LED) module and second light-emitting diode (LED) module further include being formed in first light-absorption layer
The first photic zone and be formed in the second photic zone of second light-absorption layer, also, first photic zone and described second
Photic zone respectively include: the first face contacted with the paddy and the multiple paddy；And it is formed flatly the phase in first face
The second face tossed about.
19. a kind of display luminescent diode module base plate, which is characterized in that including
Substrate；
Multiple pixels arrange on the substrate, and each pixel includes red light emitting diodes chip, green emitting two
Pole pipe chip, blue led chips；
Light-absorption layer is formed on the substrate, and including the paddy between the chip between adjacent light-emitting diode chip for backlight unit
And the paddy between the pixel between adjacent pixel；And
Photic zone is formed in the upper side of the light-emitting diode chip for backlight unit and the upper side of the light-absorption layer.
20. display according to claim 19 light-emitting diode (LED) module component, which is characterized in that
The photic zone includes: the first face that the paddy between the chip and the paddy between the pixel contact；And flatly
It is formed in the second face of the opposite side in first face.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20170132603 | 2017-10-12 | ||
| KR10-2017-0132603 | 2017-10-12 | ||
| KR1020180119031A KR102657094B1 (en) | 2017-10-12 | 2018-10-05 | LED module assembly for display |
| KR10-2018-0119031 | 2018-10-05 | ||
| PCT/KR2018/011922 WO2019074278A1 (en) | 2017-10-12 | 2018-10-11 | Led module assembly for display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109844948A true CN109844948A (en) | 2019-06-04 |
Family
ID=63920614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880002168.2A Pending CN109844948A (en) | 2017-10-12 | 2018-10-11 | Display light-emitting diode (LED) module component |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10504878B2 (en) |
| JP (2) | JP6411685B1 (en) |
| KR (1) | KR102657094B1 (en) |
| CN (1) | CN109844948A (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20190041413A (en) | 2019-04-22 |
| JP6411685B1 (en) | 2018-10-24 |
| JP2019075528A (en) | 2019-05-16 |
| JP2019075552A (en) | 2019-05-16 |
| US10872882B2 (en) | 2020-12-22 |
| US10504878B2 (en) | 2019-12-10 |
| KR102657094B1 (en) | 2024-04-15 |
| JP6678716B2 (en) | 2020-04-08 |
| US20200066694A1 (en) | 2020-02-27 |
| US20190115329A1 (en) | 2019-04-18 |
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