CN109841755A - Production method, display panel and the electronic equipment of display panel - Google Patents
Production method, display panel and the electronic equipment of display panel Download PDFInfo
- Publication number
- CN109841755A CN109841755A CN201910176044.2A CN201910176044A CN109841755A CN 109841755 A CN109841755 A CN 109841755A CN 201910176044 A CN201910176044 A CN 201910176044A CN 109841755 A CN109841755 A CN 109841755A
- Authority
- CN
- China
- Prior art keywords
- water blocking
- layer
- display panel
- cover board
- blocking layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The embodiment of the present application discloses production method, display panel and the electronic equipment of a kind of display panel, wherein this method comprises: providing a thin film transistor base plate；Blue light organic emissive diode component and the first water blocking layer are made, on thin film transistor base plate to obtain thin film transistor base plate encapsulating structure；One cover board is provided；Color film, quantum layer and the second water blocking layer are formed, on the cover board to obtain cover board encapsulating structure, wherein quantum layer is to be coated with the resin containing quanta point material on color film by yellow light process technique and be made after carrying out resin solidification；One sealant layer is provided；It is by sealant layer that the progress of the second water blocking layer of the first water blocking layer of thin film transistor base plate encapsulating structure and cover board encapsulating structure is vacuum abutted, the packaging effect of display panel can effectively be promoted, and encapsulation requirement of the large scale display panel to quantum dot and Organic Light Emitting Diode can be met simultaneously, and lesser frame can be formed.
Description
Technical field
This application involves field of display technology, and in particular to a kind of production method of display panel, display panel and electronics
Equipment.
Background technique
Quantum dot (Quantum Dot, QD) is a kind of inorganic nano level semiconductor material, by applying certain light to it
Pressure and electric field, it will issue the light of specific frequency, and the frequency of the light issued can become with the change of the size of quantum dot
Change, thus the size by being precisely controlled quantum dot can issue very pure RGB three primary colors, so that colour gamut is significantly improved,
It has been widely applied in QD-LCD TV at present.Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED)
Possess the characteristics such as self-luminous, ultra-thin, fast response time, wide viewing angle, blue light organic emissive diode component (Blue Organic
Light-Emitting Diode, BOLED) it is ideal quantum dot excitation light source.Therefore combination (the QD- of quantum dot and BOLED
BOLED the advantages of) panel made will possess quantum dot and OLED simultaneously, to promote properties of product.
But QD and OLED are easy to be influenced by steam, it is necessary to be packaged.The mainstream of QD-LCD quantum dot is encapsulated as at present
The flaky material that quantum dot is accompanied between film is attached between backlight and liquid crystal display panel by On-Surface mode, but
In QD-BOLED panel, quanta point material in panel itself, although therefore On-Surface method it is more mature in QD-LCD, simultaneously
It is not suitable for QD-BOLED.Therefore need to develop new packaging method and structure to be packaged to QD-BOLED TV panel.
Summary of the invention
The embodiment of the present application provides production method, display panel and the electronic equipment of a kind of display panel, can effectively mention
The packaging effect of display panel is risen, and encapsulation of the large scale display panel to quantum dot and Organic Light Emitting Diode can be met simultaneously
It is required that and lesser frame can be formed.
The embodiment of the present application provides a kind of production method of display panel, comprising:
One thin film transistor base plate is provided；
Blue light organic emissive diode component and the first water blocking layer are made, on the thin film transistor base plate to obtain
Thin film transistor base plate encapsulating structure；
One cover board is provided；
Color film, quantum layer and the second water blocking layer are formed on the cover board, to obtain cover board encapsulating structure, wherein institute
Stating quantum layer is to be coated with the resin containing quanta point material on the color film by yellow light process technique and carry out resin solidification
After be made；
One sealant layer is provided；
The thin film transistor base plate encapsulating structure and cover board encapsulating structure are subjected to vacuum patch by the sealant layer
It closes, wherein first water blocking layer is bonded with the second water blocking layer by the way that the sealant layer is corresponding.
It is described to be made on the thin film transistor base plate in the production method of display panel described in the embodiment of the present application
Make blue light organic emissive diode component and the first water blocking layer, to obtain thin film transistor base plate encapsulating structure, comprising:
Blue light organic emissive diode component is made on the thin film transistor base plate；
The first water blocking layer is formed on the blue light organic emissive diode component, to obtain thin film transistor base plate encapsulation
Structure.
It is described to be made on the thin film transistor base plate in the production method of display panel described in the embodiment of the present application
Make blue light organic emissive diode component, comprising:
The blue light organic emissive two is made on the thin film transistor base plate by way of vapor deposition or inkjet printing
Pole pipe device.
It is described in the blue light organic emissive diode in the production method of display panel described in the embodiment of the present application
The first water blocking layer is formed on device, comprising:
It is formed on the blue light organic emissive diode component by way of plasma enhanced chemical vapor deposition
First water blocking layer.
It is described that color film, amount are formed on the cover board in the production method of display panel described in the embodiment of the present application
Sublayer and the second water blocking layer, to obtain cover board encapsulating structure, comprising:
Color film is formed on the cover board；
It is coated with the resin containing quanta point material on the color film by yellow light process technique, and carries out prebake conditions and baking
Roasting mode solidifies the resin containing quanta point material, to form quantum layer；
The second water blocking layer is formed, on the quantum layer to obtain cover board encapsulating structure.
It is described that color film, packet are formed on the cover board in the production method of display panel described in the embodiment of the present application
It includes:
Being formed on the cover board has red pixel cell, green pixel cell, blue pixel cells and black square
The color film of battle array, wherein the black matrix" is distributed in the periphery and each adjacent red pixel cell, green picture of the color film
Between plain unit, blue pixel cells.
In the production method of display panel described in the embodiment of the present application, first water blocking layer, which coats the blue light, to be had
Machine LED device and second water blocking layer coat the quantum layer.
It is described that the second resistance is formed on the quantum layer in the production method of display panel described in the embodiment of the present application
Water layer, comprising:
Institute is formed on the quantum layer by way of plasma enhanced chemical vapor deposition or atomic layer deposition
State the second water blocking layer.
In the production method of display panel described in the embodiment of the present application, when the sealant layer is in idle state
When, the sealant layer is provided with the first protective film on one side, and the sealant layer another side is provided with the second protective film, described
It is by the sealant layer that the thin film transistor base plate encapsulating structure and the progress of cover board encapsulating structure is vacuum abutted, comprising:
Remove first protective film, by the one side of the sealant layer on the thin film transistor base plate encapsulating structure
First water blocking layer carry out it is vacuum abutted；
Second protective film is removed, by described the on the another side of the sealant layer and the cover board encapsulating structure
Two water blocking layers carry out vacuum abutted；
The sealant layer is solidified by way of ultra-violet curing or heating.
The embodiment of the present application also provides a kind of display panel, comprising: thin film transistor base plate encapsulating structure, cover board encapsulation knot
Structure and sealant layer；
Wherein, the thin film transistor base plate encapsulating structure includes that the thin film transistor base plate set gradually, blue light are organic
LED device and the first water blocking layer；
The cover board encapsulating structure includes the cover board set gradually, color film, quantum layer and the second water blocking layer；
The thin film transistor base plate encapsulating structure fits in the cover board encapsulating structure by the sealant layer,
In, first water blocking layer is bonded with the second water blocking layer by the way that the sealant layer is corresponding.
In display panel described in the embodiment of the present application, first water blocking layer coats two pole of blue light organic emissive
Tube device and second water blocking layer coat the quantum layer.
In display panel described in the embodiment of the present application, the sealant layer coats first water blocking layer and the second resistance
Water layer.
The embodiment of the present application also provides a kind of electronic equipment, including shell and display panel, and the display panel is mounted on
On the shell, the display panel is display panel described in the application any embodiment.
The production method of a kind of display panel provided by the embodiments of the present application, by providing a thin film transistor base plate；?
Blue light organic emissive diode component and the first water blocking layer are made on thin film transistor base plate, to obtain thin film transistor base plate
Encapsulating structure；One cover board is provided；Color film, quantum layer and the second water blocking layer are formed on the cover board, to obtain cover board encapsulating structure,
Wherein, the quantum layer is to be coated with the resin containing quanta point material on the color film by yellow light process technique and set
It is made after rouge solidification；One sealant layer is provided；Thin film transistor base plate encapsulating structure and cover board encapsulation are tied by sealant layer
Structure carries out vacuum abutted, wherein the first water blocking layer is bonded with the second water blocking layer by the way that sealant layer is corresponding.The embodiment of the present application is logical
It crosses and makes BOLED on the tft substrate and be packaged, then make QD on the cover board and be packaged, finally by sealant
Layer is vacuum abutted by TFT substrate encapsulating structure and cover board encapsulating structure, can effectively promote the packaging effect of display panel, and energy
Meet encapsulation requirement of the large scale display panel to quantum dot and Organic Light Emitting Diode simultaneously, and lesser frame can be formed.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the drawings in the following description are only some examples of the present application, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is the structural schematic diagram of electronic equipment provided by the embodiments of the present application.
Fig. 2 is the structural schematic diagram of display panel provided by the embodiments of the present application.
Fig. 3 is the first pass schematic diagram of the preparation method of display panel provided by the embodiments of the present application.
Fig. 4 is the second procedure schematic diagram of the preparation method of display panel provided by the embodiments of the present application.
Fig. 5 is the third flow diagram of the preparation method of display panel provided by the embodiments of the present application.
Fig. 6 is the 4th flow diagram of the preparation method of display panel provided by the embodiments of the present application.
Fig. 7 is the 5th flow diagram of the preparation method of display panel provided by the embodiments of the present application.
Fig. 8 and Fig. 9 is the preparation process flow schematic diagram of display panel provided by the embodiments of the present application.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description.Obviously, described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall in the protection scope of this application.
In the description of the present application, it is to be understood that term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
It describes the application and simplifies description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with spy
Fixed orientation construction and operation, therefore should not be understood as the limitation to the application.In addition, term " first ", " second " are only used for
Purpose is described, relative importance is not understood to indicate or imply or implicitly indicates the quantity of indicated technical characteristic.
" first " is defined as a result, the feature of " second " can explicitly or implicitly include one or more feature.?
In the description of the present application, the meaning of " plurality " is two or more, unless otherwise specifically defined.
In the description of the present application, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected or can mutually communicate；It can be directly connected, it can also be by between intermediary
It connects connected, can be the connection inside two elements or the interaction relationship of two elements.For the ordinary skill of this field
For personnel, the concrete meaning of above-mentioned term in this application can be understood as the case may be.
In this application unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Following disclosure provides many different embodiments or example is used to realize the different structure of the application.In order to
Simplify disclosure herein, hereinafter the component of specific examples and setting are described.Certainly, they are merely examples, and
And purpose does not lie in limitation the application.In addition, the application can in different examples repeat reference numerals and/or reference letter,
This repetition is for purposes of simplicity and clarity, itself not indicate between discussed various embodiments and/or setting
Relationship.In addition, this application provides various specific techniques and material example, but those of ordinary skill in the art can be with
Recognize the application of other techniques and/or the use of other materials.
The embodiment of the present application provides production method, display panel and the electronic equipment of a kind of display panel, the display panel
It can integrate in the electronic device, which can be made of the production method of display panel, which can be with
It is the equipment such as intelligent wearable device, smart phone, tablet computer, smart television.
Referring to Fig. 1, Fig. 1 is the structural schematic diagram of electronic equipment provided by the embodiments of the present application.The electronic equipment 100 can
To include display panel 10, control circuit 20 and shell 30.It should be noted that electronic equipment 100 shown in FIG. 1 is not
It is limited to the above content, can also includes other devices, for example can also includes camera, antenna structure, line unlocked state etc..
Wherein, display panel 10 is set on shell 30.
In some embodiments, display panel 10 can be fixed on shell 30, and display panel 10 and shell 30 form close
Space is closed, to accommodate the devices such as control circuit 20.
In some embodiments, shell 30 can be to be fabricated from a flexible material, for example be plastic casing or silica gel shell
Deng.
Wherein, which is mounted in shell 30, which can be the mainboard of electronic equipment 100,
Can integrate in control circuit 20 battery, antenna structure, microphone, loudspeaker, earphone interface, Universal Serial Bus Interface,
One in the functional units such as camera, range sensor, ambient light sensor, receiver and processor, it is two or more.
Wherein, which is mounted in shell 30, meanwhile, which is electrically connected to control circuit 20
On, to form the display surface of electronic equipment 100.The display panel 10 may include display area and non-display area.The display
Region can be used to show the picture of electronic equipment 100 or carry out touching manipulation etc. for user.The non-display area can be used for
Various functional units are set.
Referring to Fig. 2, Fig. 2 is the structural schematic diagram of display panel provided by the embodiments of the present application.The display panel 10 can
To include thin film transistor base plate encapsulating structure 11, cover board encapsulating structure 12 and sealant layer 13.
Wherein, thin film transistor base plate encapsulating structure 11 includes thin film transistor base plate (the Thin Film set gradually
Transistor, TFT) 111, blue light organic emissive diode component 112 and the first water blocking layer 113.
Cover board encapsulating structure 12 includes the cover board 121 set gradually, color film 122, quantum layer 123 and the second water blocking layer
124.Wherein, quantum layer 123 is that the resin containing quanta point material and progress are coated on color film 122 by yellow light process technique
It is made after resin solidification.
Thin film transistor base plate encapsulating structure 11 fits in cover board encapsulating structure 12 by sealant layer 13, wherein first
Water blocking layer 113 is bonded with the second water blocking layer 124 by the way that sealant layer 13 is corresponding.
For example, the one side 131 of sealant layer 13 fits in the first water blocking layer 113, the another side 132 of sealant layer 13 is bonded
In the second water blocking layer 124, so that the first water blocking layer 113 is bonded with the second water blocking layer 124 by the way that sealant layer 13 is corresponding.Wherein,
The one side 131 and another side 132 of sealant layer 13 are backwards to setting.
Wherein, color film 122 can be colored filter (Color filter, CF).
In some embodiments, color film 122 includes red pixel cell 1221, green pixel cell 1222, blue pixel
Unit 1223 and black matrix" 1224, wherein black matrix" 1224 be distributed in color film 122 periphery and each adjacent red
Pixel unit 1221, green pixel cell 1222, between blue pixel cells 1223.
In some embodiments, the first water blocking layer 113 can be by silicon nitride (SiNx), silicon oxynitride (SiON), silica
(SiOx) etc. any material or multiple materials are made.
In some embodiments, the second water blocking layer 124 can be by silicon nitride (SiNx), silicon oxynitride (SiON), silica
(SiOx), any material such as aluminum oxide (Al2O3), silica (SiO2) or multiple materials are made.
Wherein, the first water blocking layer 113 and the second water blocking layer 124 can be single layer structure or multilayered structure.When for multilayer
When structure, it can be made of multilayer inorganic material film；Or it can be made of multiple layer metal material film；Or by inorganic material
Material film is arranged alternately with metallic material film and is made.
In some embodiments, the first water blocking layer 113 coats blue light organic emissive diode component 112, the second water blocking layer
124 cladding quantum layers 123.Wherein, blue light organic emissive diode component 112 is by the first water blocking layer 113 and thin film transistor (TFT) base
Plate 111 coats between.Quantum layer 123 is coated between by the second water blocking layer 124 and color film 122.
In some embodiments, sealant layer 13 coats the first water blocking layer 113 and the second water blocking layer 124.
Display panel 10 provided by the embodiments of the present application, including thin film transistor base plate encapsulating structure 11, cover board encapsulation knot
Structure 12 and sealant layer 13；Thin film transistor base plate encapsulating structure 11 includes the thin film transistor base plate (Thin set gradually
Film Transistor, TFT) 111, blue light organic emissive diode component 112 and the first water blocking layer 113；Cover board encapsulation knot
Structure 12 includes the cover board 121 set gradually, color film 122, quantum layer 123 and the second water blocking layer 124, wherein quantum layer 123 is
The resin containing quanta point material is coated on color film 122 by yellow light process technique and is made after carrying out resin solidification；Film
Transistor base encapsulating structure 11 fits in cover board encapsulating structure 12 by sealant layer 13, wherein the first water blocking layer 113 and the
Two water blocking layers 124 pass through the corresponding fitting of sealant layer 13.The embodiment of the present application is by being packaged in TFT substrate encapsulation knot for BOLED
In structure, and QD is packaged in cover board encapsulating structure, finally by sealant layer by TFT substrate encapsulating structure and cover board encapsulating structure
It is vacuum abutted, can effectively promote the packaging effect of display panel, and can meet simultaneously large scale display panel to quantum dot and
The encapsulation requirement of Organic Light Emitting Diode, and lesser frame can be formed.
In order to further describe the application, it is described below from the direction of the production method of display panel.
Please refer to Fig. 3 to Fig. 6, Fig. 3 to Fig. 6 be the production method of display panel provided by the embodiments of the present application first to
4th flow diagram.The production method of the display panel includes:
Step 101, a thin film transistor base plate 111 is provided.
Step 102, blue light organic emissive diode component 112 and the first resistance are made on thin film transistor base plate 111
Water layer 113, to obtain thin film transistor base plate encapsulating structure 11.
In some embodiments, as shown in figure 4, step 102 can be realized by step 1021 to 1022, specifically:
Step 1021, blue light organic emissive diode component 112 is made on thin film transistor base plate 111.
In some embodiments, blue light organic emissive diode component 112, packet are made on thin film transistor base plate 111
It includes:
Blue light organic emissive diode device is made on thin film transistor base plate 111 by way of vapor deposition or inkjet printing
Part 112.
Step 1022, the first water blocking layer 113 is formed, on blue light organic emissive diode component 112 to obtain film crystalline substance
Body pipe substrate encapsulation structure.
In some embodiments, the first water blocking layer 113 is formed on blue light organic emissive diode component 112, comprising:
Pass through plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor
Deposition, PECVD) mode the first water blocking layer 113 is formed on blue light organic emissive diode component 112.
In some embodiments, the side of atomic layer deposition (Atomic Layer Deposition, ALD) can also be passed through
Formula forms the first water blocking layer 113 on blue light organic emissive diode component 112.
Wherein, the first water blocking layer 113 coats blue light organic emissive diode component 112.Specifically, blue light organic emissive two
Pole pipe device 112 is coated between by the first water blocking layer 113 with thin film transistor base plate 111.
Step 103, a cover board 121 is provided.
Step 104, color film 122, quantum layer 123 and the second water blocking layer 124 are formed, on cover board 121 to obtain cover board
Encapsulating structure 12, wherein quantum layer 123 is that the tree containing quanta point material is coated on color film 122 by yellow light process technique
Rouge is simultaneously made after carrying out resin solidification.
In some embodiments, as shown in figure 5, step 104 can be realized by step 1041 to 1043, specifically:
Step 1041, color film 122 is formed on cover board 121.
In some embodiments, color film 122 is formed on cover board 121, comprising:
Being formed on cover board 121 has red pixel cell 1221, green pixel cell 1222, blue pixel cells 1223
And the color film 122 of black matrix" 1224, wherein black matrix" 1224 be distributed in color film 122 periphery and each adjacent red
Pixel unit 1221, green pixel cell 1222, between blue pixel cells 1223.
Step 1042, the resin containing quanta point material is coated on color film 122 by yellow light process technique, and is carried out pre-
The mode of baking and baking solidifies the resin containing quanta point material, to form quantum layer 123.
Step 1043, the second water blocking layer 124 is formed, on quantum layer 123 to obtain cover board encapsulating structure 12.
Wherein, the second water blocking layer 124 coats quantum layer 123.Specifically, quantum layer 123 is by the second water blocking layer 124 and color film
122 claddings are between.
In some embodiments, the second water blocking layer 124 is formed on quantum layer 123, comprising:
Second is formed on quantum layer 123 by way of plasma enhanced chemical vapor deposition or atomic layer deposition
Water blocking layer 124.
Step 105, a sealant layer 13 is provided；
Step 106, thin film transistor base plate encapsulating structure 11 and cover board encapsulating structure 12 are carried out by sealant layer 13
It is vacuum abutted, wherein the first water blocking layer 113 is bonded with the second water blocking layer 124 by the way that sealant layer 13 is corresponding.
In some embodiments, when sealant layer 13 is in idle state, the one side 131 of sealant layer 13 is provided with
One protective film 14, the another side 132 of sealant layer 13 are provided with the second protective film 15.As shown in fig. 6, step 106 can pass through step
Rapid 1061 to 1063 realize, specifically:
Step 1061, the first protective film 14 is removed, the one side 131 of sealant layer 13 and thin film transistor base plate encapsulation are tied
The first water blocking layer 113 on structure 11 carries out vacuum abutted.
Step 1062, the second protective film 15 is removed, it will be on the another side 132 of sealant layer 13 and cover board encapsulating structure 12
Second water blocking layer 124 carries out vacuum abutted.
Step 1063, sealant layer 13 is solidified by way of ultra-violet curing or heating.
In order to further describe the application, Fig. 7 to Fig. 9 is please referred to, Fig. 7 is display panel provided by the embodiments of the present application
5th flow diagram of production method, Fig. 8 and Fig. 9 are that the preparation process flow of display panel provided by the embodiments of the present application is shown
It is intended to.The production method of the display panel includes:
Step 201, a thin film transistor base plate 111 is provided.
Step 202, blue light organic emissive is made on thin film transistor base plate 111 by way of vapor deposition or inkjet printing
Diode component 112.
Step 203, in blue light organic emissive diode component 112 by way of plasma enhanced chemical vapor deposition
The first water blocking layer 113 of upper formation.
Step 204, a cover board 121 is provided.
Step 205, being formed on cover board 121 has red pixel cell 1221, green pixel cell 1222, blue pixel
The color film 122 of unit 1223 and black matrix" 1224.
Wherein, black matrix" 1224 is distributed in the periphery and each adjacent red pixel cell 1221, green of color film 122
Between pixel unit 1222, blue pixel cells 1223.
Step 206, the resin containing quanta point material is coated on color film 122 by yellow light process technique, and is carried out pre-
The mode of baking and baking solidifies the resin containing quanta point material, to form quantum layer 123.
Step 207, the second water blocking layer 124 is formed on quantum layer 123.
In some embodiments, can by way of plasma enhanced chemical vapor deposition or atomic layer deposition
The second water blocking layer 124 is formed on quantum layer 123, to obtain cover board encapsulating structure 12.
Step 208, a sealant layer 13 is provided, the one side 131 of sealant layer 13 is provided with the first protective film 14, sealant
The another side 132 of layer 13 is provided with the second protective film 15.
Step 209, the first protective film 14 is removed, the one side 131 of sealant layer 13 and thin film transistor base plate encapsulation are tied
The first water blocking layer 113 on structure 11 carries out vacuum abutted.
Step 210, the second protective film 15 is removed, it will be on the another side 132 of sealant layer 13 and cover board encapsulating structure 12
Second water blocking layer 124 carries out vacuum abutted.
Step 211, sealant layer 13 is solidified by way of ultra-violet curing or heating.
A kind of production method of display panel provided by the embodiments of the present application, provides a thin film transistor base plate；In film
Blue light organic emissive diode component and the first water blocking layer are made on transistor base, to obtain thin film transistor base plate encapsulation
Structure；One cover board is provided；Color film, quantum layer and the second water blocking layer are formed on the cover board, to obtain cover board encapsulating structure,
In, the quantum layer is to be coated with the resin containing quanta point material on the color film by yellow light process technique and carry out resin
It is made after solidification；One sealant layer is provided；By sealant layer by thin film transistor base plate encapsulating structure and cover board encapsulating structure
It carries out vacuum abutted, wherein the first water blocking layer is bonded with the second water blocking layer by the way that sealant layer is corresponding.The embodiment of the present application passes through
BOLED is made on the tft substrate and is packaged, then make QD on the cover board and is packaged, finally by sealant layer
TFT substrate encapsulating structure and cover board encapsulating structure is vacuum abutted, the packaging effect of display panel can be effectively promoted, and can be same
When meet encapsulation requirement of the large scale display panel to quantum dot and Organic Light Emitting Diode, and lesser frame can be formed.
The production method of display panel provided by the embodiments of the present application, display panel and electronic equipment have been carried out in detail above
Thin to introduce, specific examples are used herein to illustrate the principle and implementation manner of the present application, and above embodiments are said
It is bright to be merely used to help understand the application.Meanwhile for those skilled in the art, according to the thought of the application, specific real
Apply in mode and application range that there will be changes, in conclusion the content of the present specification should not be construed as the limit to the application
System.
Claims (10)
1. a kind of production method of display panel characterized by comprising
One thin film transistor base plate is provided；
Blue light organic emissive diode component and the first water blocking layer are made, on the thin film transistor base plate to obtain film
Transistor base encapsulating structure；
One cover board is provided；
Color film, quantum layer and the second water blocking layer are formed on the cover board, to obtain cover board encapsulating structure, wherein the amount
Sublayer is to be coated with the resin containing quanta point material on the color film by yellow light process technique and make after carrying out resin solidification
At；
One sealant layer is provided；
It is by the sealant layer that the thin film transistor base plate encapsulating structure and the progress of cover board encapsulating structure is vacuum abutted,
In, first water blocking layer is bonded with the second water blocking layer by the way that the sealant layer is corresponding.
2. the production method of display panel as described in claim 1, which is characterized in that described in the thin film transistor base plate
Upper production blue light organic emissive diode component and the first water blocking layer, to obtain thin film transistor base plate encapsulating structure, comprising:
Blue light organic emissive diode component is made on the thin film transistor base plate；
The first water blocking layer is formed on the blue light organic emissive diode component, to obtain thin film transistor base plate encapsulation knot
Structure.
3. the production method of display panel as described in claim 1, which is characterized in that described to form coloured silk on the cover board
Film, quantum layer and the second water blocking layer, to obtain cover board encapsulating structure, including
Color film is formed on the cover board；
It is coated with the resin containing quanta point material on the color film by yellow light process technique, and carries out prebake conditions and baking
Mode solidifies the resin containing quanta point material, to form quantum layer；
The second water blocking layer is formed, on the quantum layer to obtain cover board encapsulating structure.
4. the production method of display panel as claimed in claim 3, which is characterized in that described to form coloured silk on the cover board
Film, comprising:
Being formed on the cover board has red pixel cell, green pixel cell, blue pixel cells and black matrix"
Color film, wherein the black matrix" is distributed in the periphery and each adjacent red pixel cell, green pixel list of the color film
Between member, blue pixel cells.
5. the production method of display panel as claimed in claim 3, which is characterized in that first water blocking layer coats the indigo plant
Light organic light emitting diode device and second water blocking layer coat the quantum layer.
6. the production method of display panel as claimed in claim 3, which is characterized in that when the sealant layer is in idle shape
When state, the sealant layer is provided with the first protective film on one side, and the sealant layer another side is provided with the second protective film, institute
It states and the thin film transistor base plate encapsulating structure is carried out with cover board encapsulating structure by vacuum abutted, packet by the sealant layer
It includes:
First protective film is removed, by the one side of the sealant layer and the institute on the thin film transistor base plate encapsulating structure
It is vacuum abutted to state the progress of the first water blocking layer；
Second protective film is removed, by second resistance on the another side of the sealant layer and the cover board encapsulating structure
Water layer carries out vacuum abutted；
The sealant layer is solidified by way of ultra-violet curing or heating.
7. a kind of display panel characterized by comprising thin film transistor base plate encapsulating structure, cover board encapsulating structure and close
Adhesive layer；
Wherein, the thin film transistor base plate encapsulating structure includes the thin film transistor base plate set gradually, blue light organic emissive
Diode component and the first water blocking layer；
The cover board encapsulating structure includes the cover board set gradually, color film, quantum layer and the second water blocking layer, wherein the amount
Sublayer is to be coated with the resin containing quanta point material on the color film by yellow light process technique and make after carrying out resin solidification
At；
The thin film transistor base plate encapsulating structure fits in the cover board encapsulating structure by the sealant layer, wherein institute
It states the first water blocking layer and is bonded with the second water blocking layer by the way that the sealant layer is corresponding.
8. display panel as claimed in claim 7, which is characterized in that first water blocking layer coats the blue light organic emissive
Diode component and second water blocking layer coat the quantum layer.
9. display panel as claimed in claim 8, which is characterized in that the sealant layer coats first water blocking layer and the
Two water blocking layers.
10. a kind of electronic equipment, which is characterized in that including shell and display panel, the display panel is mounted on the shell
On, the display panel is the described in any item display panels of claim 7 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910176044.2A CN109841755A (en) | 2019-03-08 | 2019-03-08 | Production method, display panel and the electronic equipment of display panel |
| PCT/CN2019/079971 WO2020181587A1 (en) | 2019-03-08 | 2019-03-28 | Display panel manufacturing method, display panel, and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910176044.2A CN109841755A (en) | 2019-03-08 | 2019-03-08 | Production method, display panel and the electronic equipment of display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109841755A true CN109841755A (en) | 2019-06-04 |
Family
ID=66885496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910176044.2A Pending CN109841755A (en) | 2019-03-08 | 2019-03-08 | Production method, display panel and the electronic equipment of display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109841755A (en) |
| WO (1) | WO2020181587A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110413150A (en) * | 2019-07-09 | 2019-11-05 | 深圳市华星光电半导体显示技术有限公司 | A kind of infrared touch display device and preparation method thereof |
| CN110943181A (en) * | 2019-11-22 | 2020-03-31 | 深圳市华星光电半导体显示技术有限公司 | OLED device and preparation method thereof |
| WO2021035530A1 (en) * | 2019-08-27 | 2021-03-04 | 京东方科技集团股份有限公司 | Display device and fabricating method, and electronic apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304684A (en) * | 2015-11-18 | 2016-02-03 | 深圳市华星光电技术有限公司 | Color display device and manufacturing method thereof |
| CN107591431A (en) * | 2017-09-15 | 2018-01-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of color membrane substrates and display device |
| US20180374409A1 (en) * | 2017-06-23 | 2018-12-27 | Samsung Electronics Co., Ltd. | Display apparatus |
-
2019
- 2019-03-08 CN CN201910176044.2A patent/CN109841755A/en active Pending
- 2019-03-28 WO PCT/CN2019/079971 patent/WO2020181587A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304684A (en) * | 2015-11-18 | 2016-02-03 | 深圳市华星光电技术有限公司 | Color display device and manufacturing method thereof |
| US20180374409A1 (en) * | 2017-06-23 | 2018-12-27 | Samsung Electronics Co., Ltd. | Display apparatus |
| CN107591431A (en) * | 2017-09-15 | 2018-01-16 | 深圳市华星光电半导体显示技术有限公司 | A kind of color membrane substrates and display device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110413150A (en) * | 2019-07-09 | 2019-11-05 | 深圳市华星光电半导体显示技术有限公司 | A kind of infrared touch display device and preparation method thereof |
| WO2021035530A1 (en) * | 2019-08-27 | 2021-03-04 | 京东方科技集团股份有限公司 | Display device and fabricating method, and electronic apparatus |
| US11950486B2 (en) | 2019-08-27 | 2024-04-02 | Boe Technology Group Co., Ltd. | Display device and manufacturing method thereof, electronic apparatus |
| CN110943181A (en) * | 2019-11-22 | 2020-03-31 | 深圳市华星光电半导体显示技术有限公司 | OLED device and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020181587A1 (en) | 2020-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109950416A (en) | Production method, display panel and the electronic equipment of display panel | |
| CN109950425A (en) | Production method, display panel and the electronic equipment of display panel | |
| US11940684B2 (en) | Display device and electronic device | |
| CN103700685B (en) | A kind of display panel, display device | |
| CN207116481U (en) | Display base plate, display device | |
| CN207381403U (en) | Display base plate, display panel | |
| CN107039595B (en) | Display device | |
| CN109841755A (en) | Production method, display panel and the electronic equipment of display panel | |
| CN108257509A (en) | Flexible display apparatus | |
| CN108630732A (en) | OLED display panel and preparation method thereof | |
| CN106876424A (en) | A kind of OLED and preparation method thereof | |
| WO2017020372A1 (en) | Flexible glass substrate, flexible display screen and manufacturing method for flexible display screen | |
| CN108022947A (en) | Organic light-emitting display device and its manufacture method | |
| CN109300959A (en) | Display panel and preparation method thereof, display device | |
| WO2016095332A1 (en) | Oled touch display device and manufacturing method therefor | |
| CN109087935A (en) | Display base plate and preparation method thereof, display panel | |
| TW201738711A (en) | Touch sensor integrated color filter and manufacturing method for the same | |
| CN111613653B (en) | Display panel and display device | |
| CN109638036A (en) | Display panel and mobile device | |
| CN110034158A (en) | Display device | |
| WO2020199272A1 (en) | Quantum dot flexible oled display device and manufacturing method | |
| CN207425923U (en) | Display panel and display device | |
| KR20120022253A (en) | Electrophoretic display deivce and method of fabrication thereof | |
| WO2020124805A1 (en) | Display screen and display apparatus | |
| CN103531609A (en) | display device, display panel and display unit of AMOLED (active matrix/organic light emitting diode) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190604 |