CN103531609A - display device, display panel and display unit of AMOLED (active matrix/organic light emitting diode) - Google Patents

display device, display panel and display unit of AMOLED (active matrix/organic light emitting diode) Download PDF

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CN103531609A
CN103531609A CN201310508645.1A CN201310508645A CN103531609A CN 103531609 A CN103531609 A CN 103531609A CN 201310508645 A CN201310508645 A CN 201310508645A CN 103531609 A CN103531609 A CN 103531609A
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layer
emitting diode
light emitting
organic light
active matrix
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CN103531609B (en
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张晨
李延钊
孙力
吴仲远
刘则
解红军
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BOE Technology Group Co Ltd
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Abstract

The invention relates to the technical field of display, in particular to a display device, a display panel and a display unit of an AMOLED. The display device of the AMOLED comprises a thin film transistor formed on a substrate; a pixel electrode layer, a luminescent layer and a color filter layer are sequentially formed on the thin film transistor; a first packaging layer used for isolating the luminescent layer from the air is arranged between the luminescent layer and the color filter layer; and a second packaging layer used for isolating the color filter layer from the air is arranged on the color filter layer. Flexible display can be truly achieved through a film packaging technology, therefore, processing steps are reduced greatly, and the yield of products is increased finally; and meanwhile, the using quantity of substrates is reduced, so that the thickness of the display can be reduced to the greatest degree.

Description

Active matrix organic light emitting diode display part, display floater and display unit
Technical field
The present invention relates to Display Technique field, relate in particular to a kind of active matrix organic light emitting diode display part and be provided with display floater and the display unit of this active matrix organic light emitting diode display part.
Background technology
Active matrix organic light-emitting diode (Active Matrix/Organic Light Emitting Diode, be abbreviated as AMOLED) manufacture craft of display device is the Main Bottleneck that affects AMOLED scale of mass production, the main technique that is hopeful at present to carry out scale of mass production comprises the embedded thin film transistor (TFT) array of color film (Color Filter on Array, be abbreviated as COA) technique, the combination process that OLED liquid is printed and evaporation combines, and OLED FMM(Fine Metal Mask) pressure decatizing depositing process, wherein, the highest with the degree of compatibility of present LCD with the embedded thin film transistor (TFT) array technique of color film again, technology difficulty is relatively low, resolution can be higher and has more the potentiality of scale of mass production, but the embedded thin film transistor (TFT) array technique of color film has two kinds of methods to realize conventionally, the first needs two blocks of glass as substrate, for the preparation of TFT backboard, also prepare white light OLED thereon for one, on another piece, prepare color film (Color Filter), by two, substantially carry out contraposition laminating afterwards, thereby when realizing active matrix organic light-emitting diode demonstration backboard, not only cost increases, and tend to due to complex technical process, can cause the various bad problem of backboard, as contraposition deviation, sample Cell Gap is inconsistent etc., the serious backboard that directly causes is scrapped, yields reduces, another method be by color film preparation in TFT, deposit ITO prepare white light OLED on color film afterwards, but this kind of method can make the emergent gas (Outgas) in color film enter among TFT device, can greatly affect like this production yield of TFT backboard, can significantly reduce equally the useful life of backboard.
Therefore,, for above deficiency, the invention provides a kind of active matrix organic light emitting diode display part and be provided with display floater and the display unit of this active matrix organic light emitting diode display part.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention is to solve in the manufacture craft of active matrix organic light emitting diode display part conventionally at least to need two blocks of glass as substrate, thereby when realizing active matrix organic light-emitting diode demonstration backboard, due to complex technical process, can cause the various bad problem of backboard, the serious backboard that directly causes is scrapped, the problem that yields reduces.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of active matrix organic light emitting diode display part, it comprises the thin-film transistor being formed on substrate, on described thin-film transistor, form successively pixel electrode layer, luminescent layer and color rete, between described luminescent layer and color rete, be provided with for making the first encapsulated layer of described luminescent layer and air insulated, on described color rete, be coated with for making the second encapsulated layer of described color rete and air insulated.
Further, described thin-film transistor comprises:
Be formed on the grid on described substrate;
Cover on described grid and extend to the gate insulator on described substrate;
That on described gate insulator, form and be positioned at the active layer above described grid;
The barrier layer forming on described active layer;
That on barrier layer, form and extend to source electrode and the drain electrode on described active layer and gate insulator;
The passivation layer covering on described source electrode, drain electrode, barrier layer and gate insulator.
Further, form described pixel electrode layer on described passivation layer, described pixel electrode layer is connected with described source electrode or drain electrode; Edges cover at described pixel electrode layer has pixel to define layer, and described pixel defines layer and extends on described passivation layer.
Further, on described pixel electrode layer, form described luminescent layer, on described luminescent layer, be coated with and extend to the first encapsulated layer that described pixel defines layer; Described color rete is formed on described the first encapsulated layer, is coated with and extends to the second encapsulated layer on described the first encapsulated layer on described color rete.
Further, described the first encapsulated layer and the second encapsulated layer are inorganic water-proof oxygen rete, and the material of described inorganic water-proof oxygen rete is a kind of in silica, silicon nitride or silicon oxynitride, and thickness is 100～5000nm.
Further, described the first encapsulated layer and the second encapsulated layer are organic layer and the overlapping structure of inorganic layer, and described inorganic layer is a kind of in silica, silicon nitride or silicon oxynitride, and thickness is 100～500nm, described organic layer is acrylic or resin material, and thickness is 1000～5000nm; The overlapping number of plies of described organic layer and inorganic layer is 1～5 layer.
Further, described color rete is RGB tri-look structures or RGBW tetra-look structures.
Further, described color rete is block layout or arranged in strips.
The present invention also provides a kind of display floater, and this display floater comprises above-mentioned active matrix organic light emitting diode display part.
The present invention also provides a kind of display unit, and this display unit comprises above-mentioned display floater.
(3) beneficial effect
Technique scheme tool of the present invention has the following advantages: active matrix organic light emitting diode display part of the present invention adopts a laminar substrate, by being provided with between luminescent layer and color rete for making the first encapsulated layer of luminescent layer and air insulated, on color rete, be coated with for making the second encapsulated layer of color rete and air insulated, utilize thin-film package technology can really realize flexible demonstration, thereby significantly reduced processing step, finally make the yield of product raise, reduce the usage quantity of substrate simultaneously, can farthest reduce the thickness of display.
Accompanying drawing explanation
Fig. 1 is the embodiment of the present invention structural representation of the active matrix organic light emitting diode display part of composition technique after completing for the first time;
Fig. 2 is the embodiment of the present invention structural representation of the active matrix organic light emitting diode display part of composition technique after completing for the second time;
Fig. 3 is the embodiment of the present invention structural representation of the active matrix organic light emitting diode display part of composition technique after completing for the third time;
Fig. 4 is the structural representation of the active matrix organic light emitting diode display part after the 4th composition technique of the embodiment of the present invention completes;
Fig. 5 is the structural representation of the active matrix organic light emitting diode display part after the 5th composition technique of the embodiment of the present invention completes;
Fig. 6 is the structural representation of the active matrix organic light emitting diode display part after the 6th composition technique of the embodiment of the present invention completes;
Fig. 7 is the structural representation of the active matrix organic light emitting diode display part after the 7th composition technique of the embodiment of the present invention completes;
Fig. 8 is the structural representation of the active matrix organic light emitting diode display part after the 8th composition technique of the embodiment of the present invention completes;
Fig. 9 is the structural representation of the active matrix organic light emitting diode display part after the 9th composition technique of the embodiment of the present invention completes;
Figure 10 is the structural representation of the active matrix organic light emitting diode display part after the tenth composition technique of the embodiment of the present invention completes;
Figure 11 is the structural representation of the active matrix organic light emitting diode display part after the ten composition technique of the embodiment of the present invention completes;
Figure 12 is the structural representation of the active matrix organic light emitting diode display part after the 12 composition technique of the embodiment of the present invention completes.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.In accompanying drawing, each layer film thickness and area size shape do not reflect the true ratio of active matrix organic light emitting diode display part of the present invention, and object is signal explanation content of the present invention just.
As shown in Fig. 1-12, a kind of active matrix organic light emitting diode display part that the embodiment of the present invention provides, comprise the thin-film transistor being formed on substrate 1, on described thin-film transistor, form successively pixel electrode layer 8, luminescent layer 10 and color rete 12, between described luminescent layer 10 and color rete 12, be provided with for making the first encapsulated layer 11 of described luminescent layer 10 and air insulated, on described color rete 12, be coated with for making the second encapsulated layer 13 of described color rete 12 and air insulated.
Particularly, described thin-film transistor comprises: be formed on the grid 2 on described substrate 1; Cover on described grid 2 and extend to the gate insulator 3 on described substrate 1; That on described gate insulator 3, form and be positioned at the active layer 4 above described grid 2; The barrier layer 5 forming on described active layer 4; That on barrier layer 5, form and extend on described active layer 4 and gate insulator 3 source electrode 62 and drain 61; At described source electrode 62, the passivation layer 7 that drains 61, cover on barrier layer 5 and gate insulator 3; On described passivation layer 7, form pixel electrode layer 8, described pixel electrode layer 8 and described source electrode 62 or drain 61 is connected; Edges cover at described pixel electrode layer 8 has pixel to define layer 9, and described pixel defines layer 9 and extends on described passivation layer 7; On described pixel electrode layer 8, form luminescent layer 10, on described luminescent layer 10, be coated with and extend to the first encapsulated layer 11 that described pixel defines layer 9; Described color rete 12 is formed on described the first encapsulated layer 11 and is positioned at the top of luminescent layer 10, is coated with and extends to the second encapsulated layer 13 on described the first encapsulated layer 11 on described color rete 12.Conventionally, the arrangement of color rete 12 can be arranged for bulk, also can be arranged in strips, also or other anyly can meet arrangements that color film layer structure is arranged.
By controlling described pixel, define layer 9 region covering on pixel electrode layer 8 edges, can determine the luminous region of luminescent layer 10, and then limit viewing area.
Active matrix organic light emitting diode display part of the present invention is by utilizing thin-film package technology can really realize flexible demonstration; by the first encapsulated layer and the second encapsulated layer protection luminescent layer and color rete; realized and airborne water oxygen isolation, protected backboard to avoid infringement and do not made its performance decay.Because the first encapsulated layer and the second encapsulated layer all adopt flexible material to make, not only realized flexible demonstration, but also significantly reduced processing step, finally make the yield of product raise, reduced the usage quantity of substrate simultaneously, reduce the thickness of display, and then alleviated the weight of display.
Fig. 1-12 are the schematic diagram of the manufacture method of active matrix organic light emitting diode display part of the present invention, can further illustrate the technical scheme of the present embodiment, in the following description, the alleged composition technique of the present invention comprises the techniques such as photoresist coating, mask, exposure, development and photoresist lift off, and photoresist be take positive photoresist as example.
Described substrate 1 can adopt transparent alkali-free glass substrate or quartz base plate, or employing has the transparency carrier of certain degree of hardness by other.
The active matrix organic light emitting diode display part of the present embodiment adopts repeatedly composition technical process to form, and the concrete technology flow process of described repeatedly composition technique is as follows:
Step 1 as shown in Figure 1, adopts the method for magnetron sputtering or thermal evaporation to form grid 2 on cleaned substrate 1.
Step 2 as shown in Figure 2, deposits gate insulator 3 on the substrate 1 of completing steps 1, and described gate insulator 3 covers on described grid 2 and extends on described substrate 1.
Step 3, as shown in Figure 3, on the substrate 1 of completing steps 2, sputter forms active layer 4, and described active layer 4 is positioned at the top of described grid 2, and it is made by indium gallium zinc oxide (indium gallium zinc oxide, is abbreviated as IGZO).
Step 4, as shown in Figure 4, deposited barrier layer 5 on the substrate 1 of completing steps 3, described barrier layer 5 is formed on described active layer 4.
Step 5, as shown in Figure 5, sputter source electrode 61 and drain electrode 62 on the substrate 1 of completing steps 4, described source electrode 61 and draining 62 extends on described active layer 4 and gate insulator 3, through gluing, and exposure, develop, wet etching, has peeled off the figure of source electrode 61 and drain electrode 62.
Step 6 as shown in Figure 6, applies photoresist and makes passivation layer 7 on the substrate 1 of completing steps 5, and the material of described passivation layer 7 is SiOx and SiNx, and thickness is , through gluing, exposure, develops, and etching is peeled off and is formed contact via hole.
Step 7, as shown in Figure 7, sputter pixel electrode layer 8 on the substrate 1 of completing steps 6, the material of described pixel electrode layer 8 is ITO, thickness is
Figure BDA0000401485300000062
, through gluing, exposure, develops, and wet etching, has peeled off ITO figure.
Step 8, as shown in Figure 8, on the substrate 1 of completing steps 7, sputter pixel defines layer 9, and the material that described pixel defines layer is acrylic material, and thickness is 1.5 microns, and through gluing, exposure, develops, and baking forms figure.
Step 9, as shown in Figure 9, evaporation luminescent layer 10 on the substrate 1 of completing steps 8, the thickness of described luminescent layer 10 is 0.5～1.5 micron.
Step 10 as shown in figure 10, forms the first encapsulated layer 11 on the substrate 1 of completing steps 9.Described the first encapsulated layer 11 is inorganic water-proof oxygen rete, and the material of described inorganic water-proof oxygen rete is a kind of in silica, silicon nitride or silicon oxynitride, and thickness is 100～5000nm; Or the first encapsulated layer 11 can be also the overlapping structure of organic layer and inorganic layer, described inorganic layer is a kind of in silica, silicon nitride or silicon oxynitride, thickness is 100～500nm, and described organic layer is acrylic or resin material, and thickness is 1000～5000nm; The overlapping number of plies of described organic layer and inorganic layer is 1～5 layer.
In step 10, adopt thin-film package technology to encapsulate luminescent layer 10, reduced the use of substrate, make the thickness attenuation of display, and be applicable to flexible demonstration.
Step 11 as shown in figure 11, forms color rete 12 on the substrate 1 of completing steps 10, and its thickness is 1 micron.Conventionally adopt the preparation technology of conventional color membrane substrates to prepare the color rete 12 of RGB tri-look structures or the color rete 12 of RGBW tetra-look structures.The arrangement of color rete 12 can be arranged for bulk, also can be arranged in strips, also or other anyly can meet arrangements that color film layer structure is arranged; Conventionally, the material of color rete 12 can be existing conventional resin material, also can be the color film materials such as acrylic system, or other can be used as Colour selection material used, as multicolor phosphor etc.
Step 12 as shown in figure 12, forms the second encapsulated layer 13 on the substrate 1 of completing steps 11.Described the second encapsulated layer 13 is inorganic water-proof oxygen rete, and the material of described inorganic water-proof oxygen rete is silica, silicon nitride and silicon oxynitride, and thickness is 100～5000nm; Or the second encapsulated layer 13 can be also the overlapping structure of organic layer and inorganic layer, and described inorganic layer is silica, silicon nitride and silicon oxynitride, and thickness is 100～500nm, and described organic layer is acrylic or resin material, and thickness is 1000～5000nm; The overlapping number of plies of described organic layer and inorganic layer is 1～5 layer.
In step 12, adopt thin-film package technology to encapsulate color rete 12, reduced the use of substrate, make the thickness attenuation of display, and be applicable to flexible demonstration.
The material that active matrix organic light emitting diode display part is made selects there is flexibility widely, and the present embodiment is not done requirement.
After above-mentioned steps, encapsulating, after encapsulation, the making of device finishes.And then connect through follow-up circuit, can realize demonstration.
The present invention also provides a kind of display floater, and this display floater comprises above-mentioned active matrix organic light emitting diode display part.
The present invention also provides a kind of display unit, and this display unit comprises above-mentioned display floater.In sum, active matrix organic light emitting diode display part of the present invention is by make successively TFT, OLED, the first encapsulated layer, color rete and the second encapsulated layer on substrate, so not only simplify original complicated technology, also improved the yield of volume production product; And reduced by a laminar substrate, make this display floater further lightening.
The above is only several preferred implementation of the present invention; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the technology of the present invention principle; can also make some improvement and modification, these improve and modification also should be considered as protection scope of the present invention.

Claims (10)

1. an active matrix organic light emitting diode display part, comprise the thin-film transistor being formed on substrate, on described thin-film transistor, be formed with successively pixel electrode layer, luminescent layer and color rete, it is characterized in that, between described luminescent layer and color rete, be provided with for making the first encapsulated layer of described luminescent layer and air insulated, on described color rete, be coated with for making the second encapsulated layer of described color rete and air insulated.
2. active matrix organic light emitting diode display part according to claim 1, is characterized in that, described thin-film transistor comprises:
Be formed on the grid on described substrate;
Cover on described grid and extend to the gate insulator on described substrate;
That on described gate insulator, form and be positioned at the active layer above described grid;
The barrier layer forming on described active layer;
That on barrier layer, form and extend to source electrode and the drain electrode on described active layer and gate insulator;
The passivation layer covering on described source electrode, drain electrode, barrier layer and gate insulator.
3. active matrix organic light emitting diode display part according to claim 2, is characterized in that, forms described pixel electrode layer on described passivation layer, and described pixel electrode layer is connected with described source electrode or drain electrode; Edges cover at described pixel electrode layer has pixel to define layer, and described pixel defines layer and extends on described passivation layer.
4. active matrix organic light emitting diode display part according to claim 3, is characterized in that, forms described luminescent layer on described pixel electrode layer, is coated with and extends to the first encapsulated layer that described pixel defines layer on described luminescent layer; Described color rete is formed on described the first encapsulated layer, is coated with and extends to the second encapsulated layer on described the first encapsulated layer on described color rete.
5. according to the active matrix organic light emitting diode display part described in claim 1-4 any one, it is characterized in that, described the first encapsulated layer and the second encapsulated layer are inorganic water-proof oxygen rete, the material of described inorganic water-proof oxygen rete is a kind of in silica, silicon nitride or silicon oxynitride, and thickness is 100～5000nm.
6. according to the active matrix organic light emitting diode display part described in claim 1-4 any one, it is characterized in that, described the first encapsulated layer and the second encapsulated layer are organic layer and the overlapping structure of inorganic layer, described inorganic layer is a kind of in silica, silicon nitride or silicon oxynitride, thickness is 100～500nm, described organic layer is acrylic or resin material, and thickness is 1000～5000nm; The overlapping number of plies of described organic layer and inorganic layer is 1～5 layer.
7. according to the active matrix organic light emitting diode display part described in claim 1-4 any one, it is characterized in that, described color rete is RGB tri-look structures or RGBW tetra-look structures.
8. active matrix organic light emitting diode display part according to claim 7, is characterized in that, described color rete is block layout or arranged in strips.
9. a display floater, is characterized in that, comprises the active matrix organic light emitting diode display part as described in claim 1-8 any one.
10. a display unit, is characterized in that, comprises display floater as claimed in claim 9.
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