CN112018261A - Flexible display panel, display device and preparation method thereof - Google Patents
Flexible display panel, display device and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
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- H10K50/00—Organic light-emitting devices
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- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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Abstract
The application relates to a flexible display panel, a display device and a preparation method thereof. The flexible display panel includes: the packaging structure comprises a substrate layer, a circuit layer arranged on the substrate layer, a light emitting layer arranged on the circuit layer, and a packaging layer covering the light emitting layer, wherein the packaging layer comprises a first film sub-layer arranged on the light emitting layer, an atom film sub-layer arranged on the first film sub-layer, a color film sub-layer arranged on the atom film sub-layer, and a second film sub-layer arranged on the color film sub-layer. This application replaces the organic layer in the traditional display panel through the atomic film sublayer, set up the color film sublayer simultaneously on the atomic film sublayer, replace the polaroid structure in the traditional display panel, realize with the effectual pinhole of filling the first film sublayer of atomic film sublayer, the thickness of very big reduction encapsulating layer simultaneously, and then reduced the thickness of flexible display panel (like OLED display panel), be favorable to the curling of flexible display panel, and improved flexible display panel's luminousness.
Description
Technical Field
The application relates to the technical field of display, in particular to a flexible display panel, a display device and a preparation method of the flexible display panel.
Background
Organic light-Emitting diodes (OLEDs) have been widely recognized as the most promising next-generation display technology due to their numerous advantages since their inception. The OLED does not need a backlight structure, the material of the light-emitting layer and the substrate are both organic materials, and the whole thickness is thinner, so that the OLED can be applied to a foldable terminal. The OLED-based display device has many advantages of self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, a viewing angle of approximately 180 °, a wide temperature range, and the like, and can realize flexible display and large-area full-color display, and is considered as the display device with the most potential development in the industry.
The OLED can be made into a rollable form, and like paper, the rollable characteristic can greatly expand the application scene of the OLED screen. The thickness of the OLED structure at the present stage is still too thick compared to the requirements of a rollable screen.
In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the thickness of the OLED display panel at the present stage is still too thick to be curled and transparent.
Disclosure of Invention
In view of this, it is necessary to provide a flexible display panel, a display device and a method for manufacturing the same, aiming at the problem that the OLED display panel at the present stage is still too thick, and is not favorable for curling and light transmission.
To achieve the above object, in one aspect, an embodiment of the present application provides a flexible display panel, including:
a substrate layer;
the circuit layer is arranged on the substrate layer;
the luminescent layer is arranged on the circuit layer;
an encapsulation layer covering the light-emitting layer,
the packaging layer comprises a first film sublayer arranged on the light emitting layer, an atomic film sublayer arranged on the first film sublayer, a color film sublayer arranged on the atomic film sublayer and a second film sublayer arranged on the color film sublayer.
In one embodiment, the color film sublayer includes a color filter and a black matrix unit respectively disposed on the atomic film sublayer.
In one embodiment, the encapsulation layer further includes a touch sub-layer disposed on the second film sub-layer, and a hard coating sub-layer disposed on the touch sub-layer.
In one embodiment, the substrate layer comprises a polyimide film layer.
In one embodiment, the polyimide film layer has a thickness in a range from 5 microns to 8 microns.
In one embodiment, the circuit layer includes a buffer sub-layer disposed on the base layer, a first gate insulating sub-layer disposed on the buffer sub-layer, a second gate insulating sub-layer disposed on the first gate insulating sub-layer, an interlayer dielectric sub-layer disposed on the second gate insulating sub-layer, and a planarization sub-layer disposed on the interlayer dielectric sub-layer.
In one embodiment, the first gate insulating sublayer is provided with a polysilicon unit, the second gate insulating sublayer is provided with a first gate unit, the interlayer dielectric sublayer is provided with a second gate unit, and the planarization sublayer is provided with a source/drain unit.
In one embodiment, the light emitting layer includes a pixel defining sub-layer disposed on the circuit layer, and an organic light emitting sub-layer disposed on the pixel defining sub-layer.
On the other hand, the embodiment of the application also provides a display device, and the display device comprises the flexible display panel.
On the other hand, the embodiment of the application also provides a preparation method of the flexible display panel, which comprises the following steps:
providing a substrate layer;
preparing a circuit layer on the substrate layer;
preparing a light emitting layer on the circuit layer;
preparing an encapsulation layer on the light emitting layer;
wherein the step of preparing the encapsulation layer on the light emitting layer comprises: preparing a first film sublayer on the light emitting layer, preparing an atomic film sublayer on the first film sublayer, preparing a color film sublayer on the atomic film sublayer, and preparing a second film sublayer on the color film sublayer.
One of the above technical solutions has the following advantages and beneficial effects:
in an embodiment of the present application, a flexible display panel is provided, where the flexible display panel includes a substrate layer, a circuit layer disposed on the substrate layer, a light emitting layer disposed on the circuit layer, and an encapsulation layer covering the light emitting layer; the packaging layer comprises a first film sublayer arranged on the light emitting layer, an atomic film sublayer arranged on the first film sublayer, a color film sublayer arranged on the atomic film sublayer and a second film sublayer arranged on the color film sublayer. This application replaces the organic layer in the traditional display panel through the atomic film sublayer, set up the color film sublayer simultaneously on the atomic film sublayer, replace the polaroid structure in the traditional display panel, realize with the effectual pinhole of filling the first film sublayer of atomic film sublayer, the thickness of very big reduction encapsulating layer simultaneously, and then reduced the thickness of flexible display panel (like OLED display panel), be favorable to the curling of flexible display panel, and improved flexible display panel's luminousness.
Drawings
FIG. 1 is a schematic diagram of a flexible display panel according to an embodiment;
FIG. 2 is a schematic flow chart of a method for manufacturing a flexible display panel according to an embodiment;
FIG. 3 is a flowchart illustrating steps of a method for fabricating an encapsulation layer according to one embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element and be integral therewith, or intervening elements may also be present. The terms "mounted," "disposed," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In one embodiment, as shown in fig. 1, there is provided a flexible display panel including:
a base layer 11;
the circuit layer 13, the circuit layer 13 is set on the base layer 11;
a light-emitting layer 15, the light-emitting layer 15 being provided on the circuit layer 13;
an encapsulation layer 17 covering the light emitting layer 15,
the encapsulation layer 17 includes a first film sublayer 171 disposed on the light emitting layer 15, an atomic film sublayer 173 disposed on the first film sublayer 171, a color film sublayer 175 disposed on the atomic film sublayer 173, and a second film sublayer 177 disposed on the color film sublayer 175.
Specifically, the base layer 11 may be a substrate base plate of the flexible display device, and the base layer 11 is disposed at a lower layer of the flexible display device. The substrate layer 11 may be a substrate of a flexible material. The base layer 11 may in one example be a base of a flexible synthetic resin material.
A circuit layer 13 may be provided on the base layer 11, and the circuit layer 13 may include a pixel driving circuit, a signal line, and the like; the circuit layer 13 may further include an insulating member. The pixel driving circuit on the circuit layer 13 may be used to drive the light emitting device on the light emitting layer 15 to operate. The circuit layer 13 is closely attached to the base layer 11.
The light emitting layer 15 may be disposed on the circuit layer 13, and the light emitting layer 15 may be electrically connected to the circuit layer 13. The light-emitting layer 15 may comprise a light-emitting device (e.g., an OLED device). The light emitting device on the light emitting layer 15 can emit light based on the driving of the circuit layer 13. The light-emitting layer 15 is closely attached to the circuit layer 13.
The encapsulation layer 17 may be disposed on the light emitting layer 15, and the encapsulation layer 17 may cover the light emitting layer 15, thereby being able to protect the light emitting layer 15 from external moisture and oxygen. The sealing layer 17 is closely attached to the light-emitting layer 15. The light-emitting layer 15 is located between the encapsulation layer 17 and the circuit layer 13, and the circuit layer 13 is located between the base layer 11 and the light-emitting layer 15.
Further, the encapsulation layer 17 may include a first film sublayer 171, an atomic film sublayer 173, a color film sublayer 175, and a second film sublayer 177. The first film sublayer 171 refers to a thin film layer generated by chemical reaction on the surface of the substrate using one or more gas-phase compounds or simple substances containing thin film elements. For example, the first thin film sublayer 171 may be a first cvd (chemical Vapor deposition) sublayer formed on the basis of a chemical Vapor deposition technique. The atomic film layer 173 refers to an atomic layer formed by plating a substance layer by layer in the form of a monoatomic film based on an atomic layer deposition technique. For example, the atomic film sublayer may be referred to as an ALD (atomic layer deposition) sublayer. The color film sublayer 175 refers to a structure layer formed using a color film instead of a polarizer. For example, the color film sub-layer may be referred to as a POLLLESS (Polarizer less) sub-layer. The second film sublayer 177 refers to a thin film layer generated by performing a chemical reaction on the surface of the substrate using one or more gas-phase compounds or simple substances containing thin film elements. For example, the second thin-film sublayer 177 may be referred to simply as a second CVD sublayer.
Further, based on the first film sublayer 171 provided on the light emitting layer 15, the atomic film sublayer 173 is provided on the first film sublayer 171, the color film sublayer 175 is provided on the atomic film sublayer 173, and the second film sublayer 177 is provided on the color film sublayer 175. That is, the first film sublayer 171 is disposed between the light emitting layer 15 and the atomic film sublayer 173, the atomic film sublayer 173 is disposed between the first film sublayer 171 and the color film sublayer 175, and the color film sublayer 175 is disposed between the atomic film sublayer 173 and the second film sublayer 177. A second film sublayer 177 is manufactured above the color film sublayer 175, and the second film sublayer 177 can play a role in packaging; the atomic film sublayer 173 is used to replace the IJP layer in the conventional display device, and the color film sublayer 175 is formed on the atomic film sublayer 173 to replace the polarizer structure of the conventional display device, so that the atomic film sublayer 173 can effectively fill the pinholes of the first film sublayer 171, and the thicknesses of the encapsulation layer and the polarizer can be greatly reduced.
In the above-described embodiment, based on the circuit layer 13 provided on the base layer 11, the light-emitting layer 15 is provided on the circuit layer 13, and the first film sub-layer 171 is provided on the light-emitting layer 15, the atomic film sub-layer 173 is provided on the first film sub-layer 171, the color film sub-layer 175 is provided on the atomic film sub-layer 173, and the second film sub-layer 177 is provided on the color film sub-layer 175. Replace the organic layer (promptly based on the IJP layer that the ink jet printing technology formed) among the traditional display panel to and replace the polaroid structure among the traditional display panel, realize with the effectual pinhole of filling first film sublayer 171 of atomic film sublayer 173, the thickness of very big reduction encapsulating layer simultaneously, and then reduced the thickness of flexible display panel (like OLED display panel), be favorable to the curling of flexible display panel, and improved flexible display panel's luminousness.
It should be noted that the flexible display panel may be an OLED display panel.
In one embodiment, as shown in fig. 1, the color film sublayer 175 includes a color filter 271 and a black matrix unit 273 respectively disposed on the atomic film sublayer 173.
Here, the Color filter 271 (CF) refers to an optical filter that expresses a Color. The color filter 271 can precisely select the light wave in a small range of wavelength bands to be passed, and reflect other undesired wavelength bands. The Black Matrix (BM) unit 273 refers to a light-opaque Black light-shielding layer applied outside the color light-transmitting sheet 271 in order to secure a light-shielding effect of the color filter. The black matrix unit 273 may be used to block the gap of color to prevent light leakage or color mixing.
Specifically, the color filter 271 and the black matrix 273 are respectively disposed on the atomic film layer 173, so that the structure of the conventional polarizer is replaced, and the thicknesses of the encapsulating layer 17 and the polarizer are greatly reduced.
In one example, a groove is provided on the first film sublayer, the groove can be used for filling the color filter, the groove portion is removed from the first film sublayer, the atomic film sublayer is filled, and the black matrix is covered on the color filter and the atomic film sublayer, thereby forming the color film sublayer. Need not to adopt traditional polaroid structure, very big reduction the thickness of encapsulation layer, and then reduce and flexible display panel thickness.
In one example, the thickness of the color film sub-layer may range from 3 microns to 5 microns.
In one embodiment, as shown in fig. 1, the encapsulation layer 17 further includes a touch sub-layer 179 disposed on the second film sub-layer 177, and a Hard Coating layer 181(Hard Coating layer) disposed on the touch sub-layer 179.
The touch sublayer 179 refers to a touch sublayer (DOT sublayer) formed based on a built-in touch technology. The Hard Coating layer 181 refers to a structural layer formed by Hard Coating based on Hard Coating material.
Specifically, based on the touch sublayer 179 being disposed on the second film sublayer 177, the hard coating layer 181 is disposed on the touch sublayer 179, and the second film sublayer 177 can serve as a buffer sublayer of the touch sublayer 179 to play a buffer role; set up hard coat layer 181 above touch-control sublayer 179, replace the cover window layer that traditional display device adopted, played the encapsulation effect, simultaneously very big reduction the thickness of encapsulation layer, and then reduced flexible display device's thickness.
In one example, the total thickness of the hard coat layer and the touch sub-layer may range from 3 microns to 6 microns.
In one embodiment, the substrate layer comprises a polyimide film (PI) layer.
The polyimide film layer refers to a film layer made of a polyimide material.
Specifically, a layer of polyimide may be deposited based on a deposition technique to form a polyimide thin film layer.
Further, the polyimide film layer is the individual layer polyimide film layer, and the base member layer only includes one deck polyimide film layer, compares the double-deck PI layer that adopts among the traditional display device, and the thickness on the base member layer of this application is thinner, the further flexible display panel thickness that has reduced this application.
In one particular embodiment, the polyimide film layer has a thickness in a range from 5 microns to 8 microns.
In one embodiment, as shown in fig. 1, the circuit layer 13 includes a buffer sub-layer 131 disposed on the base layer 11, a first gate insulating sub-layer 133 disposed on the buffer sub-layer 131, a second gate insulating sub-layer 135 disposed on the first gate insulating sub-layer 133, an interlayer dielectric sub-layer 137 disposed on the second gate insulating sub-layer 135, and a planarization sub-layer 139 disposed on the interlayer dielectric sub-layer 137.
Wherein the buffer sub-layer 131 is disposed on the substrate layer 11, the buffer sub-layer 131 can be used to protect the circuit layer 13 and the whole structure of the flexible display panel. The first gate insulating sublayer 133 is disposed on the buffer sublayer 131, and the first gate insulating sublayer 133 may serve to insulate the active cells included in the protection circuit layer 13. The second gate insulating sublayer 135 is disposed on the first gate insulating sublayer 133, and the second gate insulating sublayer 135 may serve to insulate the first gate unit 143 included in the protection circuit layer 13. An interlayer dielectric sublayer 137 is disposed on the second gate insulating sublayer 135, and the interlayer dielectric sublayer 137 may serve to cover the first gate unit 143, the second gate unit 145, and the source-drain unit 147 and protect the first gate unit 143 and the second gate unit 145. A planarization sublayer 139 is disposed on the interlayer dielectric sublayer 137, and the planarization sublayer 139 may be used to insulate and protect the source/drain unit 147 and planarize the surface of the source/drain unit 147.
In a specific embodiment, the first gate insulating sub-layer 133 is provided with a polysilicon unit 141, the second gate insulating sub-layer 135 is provided with a first gate unit 143, the interlayer dielectric sub-layer 137 is provided with a second gate unit 145, and the planarization sub-layer 139 is provided with a source drain unit 147.
Wherein the polysilicon cell 141(Poly-Si) refers to an active cell. In one example, the polysilicon unit 141 may be fabricated on the buffer sub-layer 131, and then the first gate insulating sub-layer 133 may be disposed on the polysilicon unit 141 and the buffer sub-layer 131 in an overlying manner.
The first gate unit 143 is disposed on the first gate insulating sublayer 133, and the first gate unit 143 corresponds to the polysilicon unit 141. In one example, the first gate unit 143 may be first fabricated on the first gate insulating sub-layer 133, and then the second gate insulating sub-layer 135 may be disposed on the first gate unit 143 and the first gate insulating sub-layer 133 in a covering manner.
The second gate unit 145 is disposed on the second gate insulating sublayer 135, and the second gate unit 145 corresponds to the first gate unit 143. In one example, the second gate unit 145 may be fabricated on the second gate insulating sub-layer 135, and then the interlayer dielectric sub-layer 137 may be disposed on the second gate unit 145 and the second gate insulating sub-layer 135.
In one example, the source and drain units may sequentially pass through the interlayer dielectric proton layer, the first gate insulating sublayer and the second gate insulating sublayer to be electrically connected with the polysilicon unit.
In one example, the source and drain cells include a source cell and a drain cell. The source unit can sequentially penetrate through the interlayer dielectric proton layer, the first grid insulation sublayer and the second grid insulation sublayer and is electrically connected with one end of the polycrystalline silicon unit. The drain unit can sequentially penetrate through the interlayer dielectric proton layer, the first grid insulation sublayer and the second grid insulation sublayer and is electrically connected with the other end of the polycrystalline silicon unit.
In one embodiment, as shown in fig. 1, the light emitting layer 15 includes a pixel defining sub-layer 151 disposed on the circuit layer 13, and an organic light emitting sub-layer 153 disposed on the pixel defining sub-layer 151.
Here, the pixel defining sub-layer 151 refers to each light emitting unit size and position that can be used to define the light emitting layer 15. A pixel-defining sublayer 151 is disposed on the circuit layer 13, in one example, the pixel-defining sublayer 151 is disposed on the planarization sublayer 139.
In one example, an anode unit is provided within the pixel defining sublayer. The anode unit is disposed on the planarization sublayer. In one example, the anode unit can be fabricated on the planarization sublayer, and then the pixel defining sublayer can be disposed overlying the anode unit and the planarization sublayer.
In one example, the anode unit includes at least one anode. The anode unit can penetrate through the planarization sublayer and is electrically connected with the source-drain unit.
In one example, the organic light emitting sub-layer may be formed on the pixel defining sub-layer using an inkjet printing process.
In one example, the light emitting layer further includes a hole injection sublayer and an electron injection sublayer. The light-emitting layer transmits direct current to the hole injection sublayer and the electron injection sublayer through the anode and the cathode, so that holes in the hole injection sublayer and electrons in the electron injection sublayer meet and combine in the organic light-emitting sublayer, chemical molecules in the organic light-emitting sublayer are excited to release fluorescence or phosphorescence, and organic electroluminescence is achieved.
In one embodiment, there is also provided a display device including the flexible display panel of any one of the above.
For example, the flexible display panel may include a substrate layer, a circuit layer disposed on the substrate layer, a light emitting layer disposed on the circuit layer, and an encapsulation layer covering the light emitting layer; the packaging layer comprises a first film sublayer arranged on the light emitting layer, an atomic film sublayer arranged on the first film sublayer, a color film sublayer arranged on the atomic film sublayer and a second film sublayer arranged on the color film sublayer. This application replaces the organic layer in the traditional display panel through the atom membrane sublayer, set up the color membrane sublayer simultaneously on the atom membrane sublayer, replace the polaroid structure in the traditional display panel, realize with the effectual pinhole of filling the first film sublayer of atom membrane sublayer, the thickness of very big reduction encapsulating layer simultaneously, the thickness of flexible display panel (like OLED display panel) has been reduced, be favorable to the curling of flexible display panel, and then display device's thickness has been reduced, and display device's luminousness has been improved.
In one embodiment, as shown in fig. 2, there is also provided a method for manufacturing a flexible display panel, including the steps of:
step S210, providing a base layer.
Step S220, a circuit layer is prepared on the base layer.
Step S230, a light emitting layer is prepared on the circuit layer.
Step S240, an encapsulation layer is prepared on the light emitting layer.
As shown in fig. 3, step S240 includes:
in step S242, a first thin film sublayer is prepared on the light-emitting layer.
In step S244, an atomic film sublayer is prepared on the first thin film sublayer.
Step S246, a color film sublayer is prepared on the atomic film sublayer.
Step S248, a second film sublayer is prepared on the color film sublayer.
Specifically, the base layer may be formed by deposition, and the circuit layer may be formed on the base layer by a low temperature polysilicon process. And depositing and forming a light-emitting layer on the circuit layer by an evaporation process. And depositing a first film sublayer material on the light-emitting layer by a chemical vapor deposition method to form a first film sublayer, wherein the first film sublayer completely covers the light-emitting layer. And depositing an atomic film sub-layer on the first thin film sub-layer by an atomic layer deposition method, wherein the atomic film sub-layer corresponds to the light-emitting layer. A color film sub-layer is prepared on the atomic film sub-layer such that the color film sub-layer overlies the atomic film sub-layer. And depositing a second film sublayer material on the color film sublayer by a chemical vapor deposition method to form a second film sublayer, so that the second film sublayer completely covers the color film sublayer. The first film sublayer, the atom film sublayer, the color film sublayer and the second film sublayer are combined to form the packaging layer.
In the above examples, the base layer, the circuit layer on the base layer, the light-emitting layer on the circuit layer, and the encapsulating layer on the light-emitting layer were prepared. Wherein the preparing of the encapsulation layer on the light emitting layer includes: preparing a first film sublayer on the light emitting layer, preparing an atomic film sublayer on the first film sublayer, preparing a color film sublayer on the atomic film sublayer, and preparing a second film sublayer on the color film sublayer. Replace the IJP layer among the traditional display panel to and replace the polaroid structure among the traditional display panel, realize with the effectual pinhole that fills first film sublayer of atomic film sublayer, the thickness of very big reduction encapsulating layer simultaneously, and then reduced flexible display panel (like OLED display panel)'s thickness, be favorable to the curling of flexible display panel, and improved flexible display panel's luminousness.
In a specific embodiment, the step of preparing the colored film sub-layer on the atomic film sub-layer comprises: and respectively preparing a color filter and a black matrix unit on the atomic film sublayer.
Specifically, a groove is formed in the first film sublayer and can be used for filling the color filter, the groove portion is removed from the first film sublayer, the atomic film sublayer is filled, the color filter and the atomic film sublayer are covered with the black matrix, and then the color film sublayer is formed. Need not to adopt traditional polaroid structure, very big reduction the thickness of encapsulation layer, and then reduce and flexible display panel thickness.
In a specific embodiment, the step of preparing the encapsulation layer further comprises: preparing a touch control sub-layer on the second film sub-layer; and preparing a hard coating layer on the touch control sub-layer.
Specifically, the touch control sublayer is prepared on the basis of preparing the touch control sublayer on the second film sublayer, the hard coating layer is prepared on the touch control sublayer, and the second film sublayer can be used as a buffer sublayer of the touch control sublayer to play a buffer role; the hard coating layer is prepared above the touch control sub-layer, a cover window layer adopted by the traditional display device is replaced, the packaging effect is achieved, meanwhile, the thickness of the packaging layer is greatly reduced, and then the thickness of the flexible display device is reduced.
In one embodiment, the substrate layer comprises a polyimide film (PI) layer.
Specifically, a layer of polyimide may be deposited based on a deposition technique to form a polyimide film, thereby resulting in a substrate layer. The base member layer only includes one deck polyimide film layer, compares the double-deck PI layer that adopts in traditional display device, and the thickness on the base member layer of this application is thinner, the further flexible display panel thickness that has reduced this application.
In one embodiment, the step of preparing the circuit layer on the substrate layer comprises:
the method includes the steps of preparing a buffer sub-layer on a base layer, preparing a first gate insulating sub-layer on the buffer sub-layer, preparing a second gate insulating sub-layer on the first gate insulating sub-layer, preparing an interlayer dielectric sub-layer on the second gate insulating sub-layer, and preparing a planarization sub-layer on the interlayer dielectric sub-layer. The buffer sublayer, the first gate insulating sublayer, the second gate insulating sublayer, the interlayer dielectric sublayer and the planarization sublayer are combined to form a circuit layer.
Specifically, a buffer sub-layer, a first gate insulating sub-layer, a second gate insulating sub-layer, an interlayer dielectric sub-layer and a planarization sub-layer may be sequentially formed on the substrate layer through a low-temperature polysilicon process.
Furthermore, in the process of preparing the buffer sublayer, the first gate insulating sublayer and the second gate insulating sublayer, the buffer sublayer, the first gate insulating sublayer and the second gate insulating sublayer need to be respectively subjected to photoetching through a photomask, and light holes are formed in corresponding regions. In the preparation process of the interlayer dielectric sub-layer and the planarization sub-layer, the anti-overflow grooves and the light holes are also required to be formed in the corresponding areas of the interlayer dielectric sub-layer and the planarization sub-layer respectively through the photolithography technology.
In one example, the polysilicon cell is fabricated within a first gate insulator layer, the first gate cell is fabricated within a second gate insulator layer, the second gate cell is fabricated within an interlayer dielectric proton layer, and the active drain cell is fabricated within a planarization sublayer.
It should be noted that the source and drain units may sequentially pass through the interlayer dielectric proton layer, the first gate insulating sublayer and the second gate insulating sublayer to be electrically connected to the polysilicon unit.
In one embodiment, the step of preparing the light emitting layer on the circuit layer includes: preparing a pixel defining sub-layer on the circuit layer; an organic light emitting sublayer is prepared on the pixel defining sublayer.
Specifically, the pixel defining sub-layer may be formed on the circuit layer based on a low temperature polysilicon process. The organic light emitting sub-layer may be deposited on the pixel defining sub-layer through an evaporation process.
Further, in the preparation process of the pixel defining sub-layer, the pixel defining sub-layer may form an anti-overflow groove and a light transmission hole in the corresponding region by a photolithography technique.
In the method for manufacturing a flexible display panel according to the above embodiments, a substrate layer is prepared, a circuit layer is prepared on the substrate layer, a light emitting layer is prepared on the circuit layer, and an encapsulation layer is prepared on the light emitting layer. Wherein the preparing of the encapsulation layer on the light emitting layer includes: preparing a first film sublayer on the light emitting layer, preparing an atomic film sublayer on the first film sublayer, preparing a color film sublayer on the atomic film sublayer, and preparing a second film sublayer on the color film sublayer. Replace the organic layer among the traditional display panel to and replace the polaroid structure among the traditional display panel, realize with the effectual pinhole of filling first film sublayer of atomic film sublayer, the thickness of very big reduction encapsulating layer simultaneously, and then reduced flexible display panel (like OLED display panel)'s thickness, be favorable to the curling of flexible display panel, and improved flexible display panel's luminousness.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A flexible display panel, comprising:
a substrate layer;
the circuit layer is arranged on the substrate layer;
the light-emitting layer is arranged on the circuit layer;
an encapsulation layer covering the light emitting layer,
the packaging layer comprises a first film sublayer arranged on the light emitting layer, an atomic film sublayer arranged on the first film sublayer, a color film sublayer arranged on the atomic film sublayer and a second film sublayer arranged on the color film sublayer.
2. The flexible display panel of claim 1, wherein the color film sub-layer comprises a color filter and a black matrix unit respectively disposed on the atomic film sub-layer.
3. The flexible display panel of claim 1, wherein the encapsulation layer further comprises a touch sub-layer disposed on the second film sub-layer, and a hard coating sub-layer disposed on the touch sub-layer.
4. The flexible display panel of claim 1, wherein the substrate layer comprises a polyimide film layer.
5. The flexible display panel of claim 4, wherein the polyimide film layer has a thickness in a range from 5 microns to 8 microns.
6. The flexible display panel of claim 1, wherein the circuit layer comprises a buffer sub-layer disposed on the base layer, a first gate insulating sub-layer disposed on the buffer sub-layer, a second gate insulating sub-layer disposed on the first gate insulating sub-layer, an inter-layer dielectric sub-layer disposed on the second gate insulating sub-layer, and a planarization sub-layer disposed on the inter-layer dielectric sub-layer.
7. The flexible display panel of claim 6, wherein the first gate insulating sublayer is provided with a polysilicon unit, the second gate insulating sublayer is provided with a first gate unit, the interlayer dielectric sublayer is provided with a second gate unit, and the planarization sublayer is provided with a source/drain unit.
8. The flexible display panel of claim 1, wherein the light-emitting layer comprises a pixel-defining sub-layer disposed on the circuit layer, and an organic light-emitting sub-layer disposed on the pixel-defining sub-layer.
9. A display device characterized by comprising the flexible display panel according to any one of claims 1 to 8.
10. A preparation method of a flexible display panel is characterized by comprising the following steps:
providing a substrate layer;
preparing a circuit layer on the substrate layer;
preparing a light emitting layer on the circuit layer;
preparing an encapsulation layer on the light emitting layer;
wherein the step of preparing an encapsulation layer on the light emitting layer comprises: preparing a first film sublayer on the luminous layer, preparing an atomic film sublayer on the first film sublayer, preparing a color film sublayer on the atomic film sublayer, and preparing a second film sublayer on the color film sublayer.
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| CN202010784236.4A CN112018261A (en) | 2020-08-06 | 2020-08-06 | Flexible display panel, display device and preparation method thereof |
| PCT/CN2020/108888 WO2022027721A1 (en) | 2020-08-06 | 2020-08-13 | Flexible display panel, display device and preparation method therefor |
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