CN109830533A - A kind of field effect transistor based on two-dimensional material preparation - Google Patents
A kind of field effect transistor based on two-dimensional material preparation Download PDFInfo
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- CN109830533A CN109830533A CN201910093297.3A CN201910093297A CN109830533A CN 109830533 A CN109830533 A CN 109830533A CN 201910093297 A CN201910093297 A CN 201910093297A CN 109830533 A CN109830533 A CN 109830533A
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- dimensional material
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- 239000000463 material Substances 0.000 title claims abstract description 71
- 230000005669 field effect Effects 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000011368 organic material Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229920001684 low density polyethylene Polymers 0.000 claims description 10
- 239000004702 low-density polyethylene Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical group S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 16
- 238000010438 heat treatment Methods 0.000 abstract description 2
- 238000006068 polycondensation reaction Methods 0.000 abstract description 2
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000005549 size reduction Methods 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 201000006549 dyspepsia Diseases 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002353 field-effect transistor method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 235000016768 molybdenum Nutrition 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
The present invention relates to a kind of field effect transistors based on two-dimensional material preparation, there is the silica dioxide medium layer of lower groove including the substrate that is sequentially arranged from top to bottom, upper surface and be arranged on silica dioxide medium layer and cover the two-dimensional material layer of the lower groove, it is respectively arranged with an organic material body along the both ends region that lower groove moves towards in two-dimensional material layer, grows a metal electrode respectively along the two side areas that vertical lower groove moves towards in two-dimensional material layer.Compared with prior art, field effect transistor of the invention is when irradiating organic material, local heating can be generated, causes organic material that polycondensation reaction occurs, to produce stress to lower section two-dimensional material, so that two-dimensional material forbidden bandwidth reduces, electron mobility improves, and two-dimensional material field-effect transistor performance is further promoted, furthermore, preparation method is easy, and product electron mobility is high, stability is good etc..
Description
Technical field
The invention belongs to two-dimensional material technical fields, are related to a kind of field effect transistor based on two-dimensional material preparation.
Background technique
It in recent years, is the two-dimensional layer semiconductor material of representative as the field effect transistor of channel material using molybdenum disulfide
It just receives more and more attention and studies, it is considered to be have very much potential rear silicon epoch material.The broadband of molybdenum disulfide
Gap (block 1.2eV, single layer are 1.8eV) provides possibility for low speed paper tape reader static power disspation, high on-off ratio.Secondly the two dimension of molybdenum disulfide
Flatness can effectively inhibit short-channel effect caused by size reduction on the basis of compatible with conventional semiconductor processing.
When two-dimensional material stretches or compresses, the distance between each atom can change, band structure and electronics
Corresponding change occurs for characteristic.Compared to other semiconductor materials, the geometric shape operability of two-dimensional material is stronger.Utilize two dimension
The strain of material leads to the variation of band structure and characteristic electron, can be improved applied to two-dimensional material FET device
Energy.
Chinese patent 201610312907.0 discloses a kind of two-dimensional material field effect transistor and preparation method, two-dimentional material
Stock ground effect transistor successively has conductive substrates, insulating medium layer, two-dimensional material, metal electrode from bottom to top.System of the invention
Preparation Method is mechanical scratch method, i.e., first two-dimensional material is transferred on insulating medium layer using mechanical stripping method, then will insulation
Metal is integrally deposited in dielectric layer and two-dimensional material, carefully operates needle point or blade under the microscope, it is made just to touch two
Material surface is tieed up, needle point or blade are then slowly moved, streaks it above middle part of two-dimensional material, to remove gold above
Belong to, forms channel.Needle point or blade are continued to move to, two metal electrodes, i.e. source electrode and drain electrode are marked.But the patent
The device performance of prepared field effect transistor need to be improved.
Summary of the invention
It is an object of the present invention to overcome the above-mentioned drawbacks of the prior art and provide one kind to be based on two-dimensional material
The field effect transistor of preparation, to improve the performance of transistor device.
The purpose of the present invention can be achieved through the following technical solutions:
It is a kind of based on two-dimensional material preparation field effect transistor, including be sequentially arranged from top to bottom substrate, upper surface
Silica dioxide medium layer with lower groove and the two dimension for being arranged on silica dioxide medium layer and covering the lower groove
Material layer is respectively arranged with an organic material body along the both ends region that lower groove moves towards in two-dimensional material layer, in two-dimentional material
The bed of material grows a metal electrode along the two side areas that vertical lower groove moves towards respectively.
Further, the substrate is made of silicon materials, with a thickness of 100-500 μm.
Further, the silica dioxide medium layer with a thickness of 50-200nm.
Further, the material of the two-dimensional material layer is molybdenum disulfide.
Further, the thickness of the two-dimensional material layer is in 2nm.
Further, the organic material body is made of low density polyethylene (LDPE), with a thickness of 10-200nm.
Further, the material of the metal electrode is gold, silver, aluminium, titanium or chromium.
Further, the recessed groove depth is 10-50nm.
Working principle of the present invention is as follows: when laser or electron beam irradiate organic material body, irradiate to organic
Material produces local heating, causes organic material that polycondensation deformation has occurred, and then produce to open to the two-dimensional material of lower section and answer
Power reduces two-dimensional material forbidden bandwidth, and electron mobility improves, to improve the property of two-dimensional material FET device
Energy.
Compared with prior art, the present invention improves the mobility of two-dimensional material transistor using the stress that organic material generates
And electric conductivity specifically has the advantage that improve device performance
(1) two-dimensional material used in the present invention, can effectively inhibit short-channel effect caused by size reduction.
(2) organic material used in the present invention is more easily-deformable to lower section two-dimensional material when being heated for low density polyethylene (LDPE)
Generate tensile stress.
(3) two-dimensional material used in the present invention can generate the variation of band structure when strain occurring or by stress,
So that forbidden bandwidth becomes smaller, electron mobility becomes larger for meeting, to improve the performance of field effect transistor.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of field effect transistor of the invention；
Fig. 2 is the side view of field effect transistor of the invention；
Description of symbols in figure:
1- substrate, 2- silica dioxide medium layer, 3- two-dimensional material layer, 4- organic material body A, 5- organic material body B, 6- gold
Belong to electrode A, 7- metal electrode B.
Specific embodiment
Below in conjunction with the embodiment that particular instance illustrates, embodiment and various features and related details herein will be referred to
The non-limiting embodiment of middle detailed description is illustrated and be described below in attached drawing and is explained more fully.It omits well-known
The description of component and processing technique, in order to avoid the unnecessary embodiment indigestion made herein.It, can be with when making the structure
Use traditional handicraft well-known in semiconductor technology.Example used herein understands implementation herein just for the sake of help
The mode that example can be carried out, and further such that those skilled in the art can implement embodiment herein.Thus, it does not answer
Example herein is interpreted as to limit the range of embodiment herein.
It should be noted that the basic conception that only the invention is illustrated in a schematic way is illustrated provided in the present embodiment,
Then schema is only shown with related component in the present invention rather than component count, shape when according to actual implementation and size are drawn,
The kenel, quantity and ratio of each component can arbitrarily change when its actual implementation for one kind, and its assembly layout kenel may also
It is increasingly complex.
Embodiment 1
A kind of construction method of the field effect transistor based on two-dimensional material preparation:
Firstly, using silicon materials as substrate 1, and substrate 1 is cleaned, substrate thickness is 500 μm.
Then, layer of silicon dioxide dielectric layer 2 is deposited, on substrate 1 to increase the adherency between dioxy material and substrate 1
Property, silica dioxide medium layer 2 with a thickness of 70nm.
Then, in the case where the upper face center of silica dioxide medium layer 2 forms one using anhydrous hydrofluoric acid directly etching
Then groove, depth 30nm cover one layer by the method for transfer on the surface of silica dioxide medium layer 2 and cover lower groove
The two-dimensional material layer 3 of molybdenum disulfide material, with a thickness of 1nm.
And then, the low density polyethylene (LDPE) of two 50nm thickness is shifted by high-pressure process in the partial region of two-dimensional material layer 3
Film, respectively organic material body A4 and organic material body B5.
Finally, depositing the crome metal film of one layer of 50nm thickness by electron beam evaporation, metal is then made by stripping technology
Form two electrode layers, respectively metal electrode A6 and metal electrode B7.
Last field effect transistor obtained is referring to figure 1 and figure 2.
Embodiment 2
A kind of construction method of the field effect transistor based on two-dimensional material preparation:
Firstly, using silicon as substrate 1, and clean substrate 1.
Layer of silicon dioxide dielectric layer 2 is deposited on substrate 1, to increase the adhesiveness between two-dimentional phase-change material and substrate 1.
Silica dioxide medium layer 2 is with a thickness of 80nm.
It later, is 50nm by one recessed groove depth of ion etching in 2 face center of silica dioxide medium layer；In lower groove
Positive photoresist is inside filled, uv-exposure processing then is carried out to photoresist；One layer of two-dimensional material layer 3 is grown by CVD method to cover
It covers on concave station face, two-dimensional material layer 3 is single layer, using two telluride molybdenums, with a thickness of 1nm；Again with developer solution by the light after exposure
Positive photoresist is carved to dissolve.
Then the low density polyethylene (LDPE) for shifting two 50nm thickness by vapor phase method in the partial region of two-dimensional material layer 3 is thin
Film, respectively organic material body A4 and organic material body B5.
The crome metal film that one layer of 50nm thickness is deposited finally by electron beam evaporation, is then made metal shape by stripping technology
At two electrode layers, respectively metal electrode A6 and metal electrode B7.
A kind of schematic diagram of the method for the raising two-dimensional material FET device performance to complete is as shown in Figure 1, Figure 2
It is shown.
Embodiment 3-6
Compared with Example 1, the overwhelming majority it is all identical, in addition to the material of metal electrode in the present embodiment be respectively adopted gold,
Silver, aluminium or titanium.
Embodiment 7
Compared with Example 1, the overwhelming majority is all identical, in addition in the present embodiment, substrate 1 with a thickness of 100 μm, titanium dioxide
Silicon dielectric layer 2 with a thickness of 50nm, organic material body with a thickness of 10nm.
Embodiment 8
Compared with Example 1, the overwhelming majority is all identical, in addition in the present embodiment, substrate 1 with a thickness of 200 μm, titanium dioxide
Silicon dielectric layer 2 with a thickness of 200nm, organic material body with a thickness of 200nm.
Embodiment 9
Compared with Example 1, the overwhelming majority is all identical, in addition in the present embodiment, recessed groove depth is 10nm.
The above description of the embodiments is intended to facilitate ordinary skill in the art to understand and use the invention.
Person skilled in the art obviously easily can make various modifications to these embodiments, and described herein general
Principle is applied in other embodiments without having to go through creative labor.Therefore, the present invention is not limited to the above embodiments, ability
Field technique personnel announcement according to the present invention, improvement and modification made without departing from the scope of the present invention all should be of the invention
Within protection scope.
Claims (8)
1. a kind of field effect transistor based on two-dimensional material preparation, which is characterized in that including the lining being sequentially arranged from top to bottom
Bottom, upper surface have lower groove silica dioxide medium layer and be arranged on silica dioxide medium layer and cover it is described under
The two-dimensional material layer of groove is respectively arranged with an organic material along the both ends region that lower groove moves towards in two-dimensional material layer
Body grows a metal electrode along the two side areas that vertical lower groove moves towards in two-dimensional material layer respectively.
2. a kind of field effect transistor based on two-dimensional material preparation according to claim 1, which is characterized in that the lining
Bottom is made of silicon materials, with a thickness of 100-500 μm.
3. a kind of field effect transistor based on two-dimensional material preparation according to claim 1, which is characterized in that described two
Silicon oxide dielectric layer with a thickness of 50-200nm.
4. a kind of field effect transistor based on two-dimensional material preparation according to claim 1, which is characterized in that described two
The material for tieing up material layer is molybdenum disulfide.
5. a kind of field effect transistor based on two-dimensional material preparation according to claim 1, which is characterized in that described two
The thickness of material layer is tieed up in 2nm.
6. a kind of field effect transistor based on two-dimensional material preparation according to claim 1, which is characterized in that described to have
Machine material bodies are made of low density polyethylene (LDPE), with a thickness of 10-200nm.
7. a kind of field effect transistor based on two-dimensional material preparation according to claim 1, which is characterized in that the gold
The material for belonging to electrode is gold, silver, aluminium, titanium or chromium.
8. a kind of field effect transistor based on two-dimensional material preparation according to claim 1, which is characterized in that under described
Depth of groove is 10-50nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113206004A (en) * | 2021-04-19 | 2021-08-03 | 武汉大学 | Laser impact preparation method for two-dimensional material compressive strain engineering |
| CN113816426A (en) * | 2021-10-15 | 2021-12-21 | 东南大学 | Two-dimensional material crystal structure regulation and control method induced by electron beam irradiation |
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| CN205140990U (en) * | 2015-09-18 | 2016-04-06 | 深圳大学 | Molybdenum disulfide film field effect transistor with stress structure |
| CN108195492A (en) * | 2018-01-19 | 2018-06-22 | 上海电力学院 | Utilize the hypersensitive strain gauge of two-dimentional phase transformation material preparation |
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- 2019-01-30 CN CN201910093297.3A patent/CN109830533A/en active Pending
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| US7906817B1 (en) * | 2008-06-06 | 2011-03-15 | Novellus Systems, Inc. | High compressive stress carbon liners for MOS devices |
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| CN113816426A (en) * | 2021-10-15 | 2021-12-21 | 东南大学 | Two-dimensional material crystal structure regulation and control method induced by electron beam irradiation |
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