CN109818257A - A kind of CMOS technology laser drive circuit - Google Patents
A kind of CMOS technology laser drive circuit Download PDFInfo
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- CN109818257A CN109818257A CN201811581648.7A CN201811581648A CN109818257A CN 109818257 A CN109818257 A CN 109818257A CN 201811581648 A CN201811581648 A CN 201811581648A CN 109818257 A CN109818257 A CN 109818257A
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Abstract
The invention discloses a kind of CMOS technology laser drive circuits, including input current mode logic (CML) circuit, embedded low-voltage difference linear constant voltage regulator circuit, negative-feedback clamp circuit, common mode feedback circuit.The structure differential digital voltage signal is converted into switching current signal, for driving laser diode；The reference current signal for receiving external setting simultaneously is adjusted the level of externally input differential digital voltage signal, and then the size of regulating switch current signal, is allowed to directly proportional to reference current signal using the principle of negative-feedback.The present invention is in the laser diode driver circuit of CMOS technology, voltage form is converted into its main feature is that electric current will be exported by resistance and electric current is arranged, the size of comparison voltage, and the output electric current for exporting tube of current is driven by common mode feedback circuit, to reach the size of current of setting；While ensuring to export current capacity, the operating rate of laser driver under CMOS technology is improved.
Description
Technical field
The present invention relates to a kind of CMOS technology laser drive circuits, especially realize transmission rate under CMOS technology
1Gbps or more is greater than the modulation electric current of 50mA, belongs to electrooptical device technical field.
Background technique
With the rapid growth of telecommunications data traffic amount, the demand to fibre optic data transmission chip is with regard to increasing.Laser
Drive circuit is the important devices in optical fiber receiver-transmitter module, and the speed and signal quality of drive output signal affect transmission
The performance of system.Currently, laser driver circuit mostly uses advanced Gesi technique to meet output driving high speed high current.It passes
The laser drive circuit of the CMOS technology of system is to be realized using switched current source, therefore tail current source needs to meet and supports 1 milli
Pacify the curent change to tens milliamperes, even if not considering the influence of current mismatch, the current source of this high current range is real
Now get up also extremely difficult.And switching tube can also introduce a large amount of switching noise, the quality of output signal be influenced, especially low
Under supply voltage, it is difficult to ensure that output speed is Gbps or more, the driving current that size of current is tens milliamperes.Due in CMOS
Under, tail current source has been lifted the source voltage terminal of switching tube, and under the action of body bias effect, switching tube threshold voltage is increased, and causes
The reduction of switching rate.
Summary of the invention
Technology of the invention solves the problems, such as: overcoming the deficiencies of the prior art and provide a kind of CMOS technology Laser Driven electricity
Road, the circuit are combined drive current adjustment and switching signal driving by way of feedback control, complete electric current
While adjusting is arranged in the driving current of output stage, the transmission of switching signal is realized, the effective operating rate for promoting circuit.
The technical solution of the invention is as follows: a kind of CMOS technology laser drive circuit, which includes altogether
Cmfb circuit, the common mode feedback circuit convert switching current signal for differential digital voltage signal, for driving laser two
Pole pipe, meanwhile, it receives the external reference current signal being arranged and externally input differential digital is adjusted using the principle of negative-feedback
The level of voltage signal, and then the size of regulating switch current signal, are allowed to directly proportional to reference current signal.
The common mode feedback circuit includes voltage regulation stage, buffered-display driver grade, circuit output stage, Voltage Feedback grade；
Voltage regulation stage receives differential digital voltage signal, the feedback electricity of comparison reference voltage and the output of Voltage Feedback grade
Pressure adjusts differential digital voltage signal level according to comparison result, i.e., when feedback voltage is greater than reference voltage, increases difference number
The level of word signal；Otherwise, the differential digital voltage signal after adjusting is sent to buffering by the level for reducing differential digital signal
Driving stage.
Buffered-display driver grade reduces the common mode electrical level of the differential digital voltage signal after adjusting, and obtains driving differential voltage letter
Number, drive the low level of differential voltage signal to be less than the turn-on threshold voltage of circuit output stage.
Circuit output stage will drive the positive and negative two paths of signals of differential voltage signal to be respectively converted into switching current signal, switch
The amplitude of current signal is directly proportional to the size of differential digital voltage signal.
Voltage Feedback grade converts feedback voltage for switching current signal, feeds back to voltage regulation stage.
The voltage regulation stage include operational amplifier OPA_1, electric current driving tube M10, NMOS tube M1, M2, resistance R7,
R8、R3。
The electrode input end of operational amplifier OPA_1 connects reference voltage, and negative input connects feedback voltage, output end
Connect the grid of electric current driving tube M10；The source electrode of electric current driving tube M10 is connected to core voltage, the drain electrode of electric current driving tube M10
It is connected in parallel one end of resistance R7, R8；The grid of NMOS tube M1 and M2 are separately connected the anode of differential digital voltage signal and bear
End, the source electrode of NMOS tube M1 and M2 are grounded by resistance R3, and the drain electrode of NMOS tube M1 and M2 are separately connected the another of resistance R7, R8
End；The voltage signal of the drain electrode of NMOS tube M1 and M2 is the differential digital voltage signal after adjusting.
The buffered-display driver grade includes that two followers being made of NMOS tube and current source are realized.
Specifically: including NMOS tube M3, M4 and current source I1, I2；NMOS tube M3 and current source I1 constitutes the first follower,
The drain electrode of NMOS tube M3 connects core voltage, and grid connects voltage regulation stage output signal anode, and source electrode is driving differential voltage
The anode of signal is grounded by current source I1；NMOS tube M4 and current source I2 constitutes the second follower, and the drain electrode of NMOS tube M4 connects
Core voltage is connect, grid connects voltage regulation stage output signal negative terminal, and source electrode is the negative terminal for driving differential voltage signal, passes through electricity
Stream source I2 ground connection.
The circuit output stage includes NMOS tube M5, M6；
The grid of NMOS tube M5, M6 is separately connected the anode and negative terminal of driving differential voltage signal, the drain electrode of NMOS tube M5
For the output of switching current signal anode；The drain electrode of NMOS tube M6 is the output of switching current signal negative terminal, the source electrode of NMOS tube M5, M6
It is connected in parallel to Voltage Feedback grade.
The circuit output stage further includes NMOS tube M7 and M8, and the grid and source electrode of NMOS tube M7 is commonly connected to NMOS tube
The grid of M5, the drain electrode of NMOS tube M7 are connected to the drain electrode of NMOS tube M6；The grid and source electrode of NMOS tube M8 is commonly connected to
The grid of NMOS tube M6, the drain electrode of NMOS tube M8 are connected to the drain electrode of NMOS tube M5.
The Voltage Feedback grade includes resistance R4, and one end of R4 is grounded, and the other end connects the source of NMOS tube M5, M6 jointly
Switching current signal is converted feedback voltage output by pole.
Above-mentioned CMOS technology laser drive circuit, further includes negative-feedback clamp circuit, and negative-feedback clamp circuit includes operation
Amplifier OPA_2, NMOS tube M9, resistance Rmodset, R5, current source I4, mirror current source I3, operational amplifier OPA_2 is just
Reference level VB, the grid of the output port connection transistor M9 of operational amplifier OPA_2, NMOS tube M9 are connected to input port
Source be connected to the negative terminal of operational amplifier OPA_2, form negative-feedback, while with being connected to by modulated resistance Rmodset,
The drain terminal of NMOS tube M9 is connected to I O power supply Vdd1 by current source I4, and the one end mirror current source I3 is connect simultaneously with current source I4
To I O power supply Vdd1, the other end is grounded by resistance R5, and mirror current source I3 and current source I4 are in mirror, generates mirror image electricity
Stream, image current flows through resistance R5 and generates reference voltage, the voltage swing due to negative feedback, on modulated resistance Rmodset
It is Imodset by the electric current I4 size on modulated resistance Rmodset equal to voltage VB.
The modulated resistance Rmodset is adjustable resistance.
The common mode feedback circuit supply voltage V3 is provided by embedded low-voltage difference linear constant voltage regulator LDO.
Compared with prior art, technical effect of the invention are as follows:
(1) present invention is combined current regulation and switching signal driving by common mode feedback circuit, common-mode feedback
Circuit adjusts the level of differential switch signal, so that the high level of high-speed switch signal completes opening for current regulation stage switching tube
The settable size for determining output electric current realizes circuit output stage while completing the transmission of switching signal while opening
Driving current be arranged adjust；
(2) present invention employs the circuit output stage of no tail current source, circuit output stage caused by tail current source is avoided
It switchs pipe threshold and increases problem, improve the operating rate of laser driver under CMOS technology；
(3) present invention embedded low-voltage difference linear constant voltage regulator (LDO) is current regulation stage power supply, realizes that stable high speed is opened
OFF signal level, it is ensured that output current quality；
(4) present invention realizes that current regulation, the resistance value of the resistance R4 used are chosen very by using common mode feedback circuit
It is small, it can be ignored, can be realized by the voltage fluctuation that resistance R4 is introduced during driving tube M5, M6 switching
The accurate output of electric current；
(5) present invention generates reference current Imodset, effective clamper modulated resistance using negative-feedback clamp circuit
Voltage on Rmodset is equal to VBG, when guarantee is changed by the electric current on modulated resistance Rmodset, modulated resistance
Voltage swing on Rmodset remains unchanged, and has been isolated and has been usually located at doing to internal circuit for circuit external Rmodset introducing
It disturbs；
(6) between input port and common mode feedback circuit of the present invention using 5 grades of amplifiers (Amp1, Amp2, Amp3, Amp4,
Amp5) input current mould (CML) circuit (1) of cascade composition.When can guarantee to input the signal of the low amplitude of oscillation of high speed, by 5 grades
Amplifier cascade structure can generate the output signal of high speed long arc.Circuit energy is improved using 5 grades of amplifier cascade structures
The maximum speed of input signal and the minimum differential mode voltage of input signal are enough handled, when reducing rise time and the decline of signal
Between, increase the rate of transmission signal.
Detailed description of the invention
Fig. 1 is CMOS technology laser drive circuit figure of the invention；
Fig. 2 is exchange (AC) analogous diagram of CMOS technology laser drive circuit common mode feedback loop of the invention；
Fig. 3 is that CMOS technology laser drive circuit output speed of the invention is 1.25Gbps, and electric current is the emulation of 50mA
Waveform diagram；
Fig. 4 is the modulated resistance Rmodset of CMOS technology laser drive circuit of the invention and the emulation wave of output electric current
Shape figure.
Specific embodiment
As shown in Figure 1, for a kind of structure chart of CMOS technology laser drive circuit of the present invention, which is based on 3.3V
What voltage CMOS transistor and 1.8V voltage CMOS transistor Mixed Design were realized.It can apply in optical fiber transmission communication system.
The CMOS technology laser drive circuit includes input current mould (CML) circuit 1, low-voltage difference linear constant voltage regulator 2, negative-feedback clamper
Circuit 3, common mode feedback circuit 4.
1, input current mould (CML) circuit
Input current mould (CML) circuit 1 be by the first amplifier Amp1, the second amplifier Amp2, third amplifier Amp3,
The input terminal of the Pyatyi enlarged structure of 4th amplifier Amp4, the 5th amplifier Amp5 cascade connection, the first amplifier Amp1 is
The input terminal of input current mould (CML) circuit 1 receives externally input differential voltage signal, while the second amplifier Amp2 also connects
Receiving externally input makes to can control signal an, ap for controlling whether input current mould (CML) circuit output signal, the 5th amplification
The output end of output end input current mould (CML) circuit of device Amp5, for amplification and after burst mode controls signal condition
Differential voltage signal INP, INN, the differential voltage signal INP, INN connect Differential Input pipe M1, M2 in common mode feedback circuit 3
Grid, control Differential Input pipe M1, M2 drain terminal generate differential output voltage, by buffered-display driver grade drive output driving pipe
M5, M6 generate modulation electric current.
Since the level range of laser driver differential input signal is typically larger than circuit core voltage, amplifier Amp1,
Amp2 is powered by 3.3V IO voltage Vdd1；The power supply of amplifier Amp3, Amp4, Amp5 are powered by 1.8V core voltage Vdd2.
2, low-voltage difference linear constant voltage regulator (LDO) circuit
Low-voltage difference linear constant voltage regulator (LDO) circuit 2 is embedded in CMOS technology laser drive circuit, for according to power supply electricity
3.3V is pressed to generate 4 power supply V3 of common mode feedback circuit.
3, common mode feedback circuit
The differential digital voltage signal that input current mould (CML) circuit 4 exports is converted switch electricity by common mode feedback circuit 4
Signal is flowed, for driving laser diode, meanwhile, the external reference current signal being arranged is received, using the principle of negative-feedback, is adjusted
The level of externally input differential digital voltage signal, and then the size of regulating switch current signal are saved, is allowed to and reference current
Signal is directly proportional.
As shown in Figure 1, common mode feedback circuit 4 includes voltage regulation stage, buffered-display driver grade, circuit output stage, Voltage Feedback
Grade.
Voltage regulation stage receives differential digital voltage signal, the feedback electricity of comparison reference voltage and the output of Voltage Feedback grade
Pressure adjusts differential digital voltage signal level according to comparison result, i.e., when feedback voltage is greater than reference voltage, increases difference number
The level of word signal；Otherwise, the differential digital voltage signal after adjusting is sent to buffering by the level for reducing differential digital signal
Driving stage.The voltage regulation stage include operational amplifier OPA_1, electric current driving tube M10, NMOS tube M1, M2, resistance R7, R8,
R3；The electrode input end of operational amplifier OPA_1 connects reference voltage, and negative input connects feedback voltage, output end connection
The grid of electric current driving tube M10；The source electrode of electric current driving tube M10 is connected to core voltage, and the drain electrode of electric current driving tube M10 is in parallel
Connect one end of resistance R7, R8；The grid of NMOS tube M1 and M2 are separately connected the anode and negative terminal of differential digital voltage signal,
The source electrode of NMOS tube M1 and M2 are grounded by resistance R3, and the drain electrode of NMOS tube M1 and M2 are separately connected the other end of resistance R7, R8；
The voltage signal of the drain electrode of NMOS tube M1 and M2 is the differential digital voltage signal after adjusting.NMOS tube M1, M2, resistance R7, R8
Constitute input difference amplifier.
Buffered-display driver grade reduces the common mode electrical level of the differential digital voltage signal after adjusting, and obtains driving differential voltage letter
Number, drive the low level of differential voltage signal to be less than the turn-on threshold voltage of circuit output stage.The buffered-display driver grade includes two
The follower being made of NMOS tube and current source.For specifically: the buffered-display driver grade include NMOS tube M3, M4 and current source I1,
I2；NMOS tube M3 and current source I1 constitutes the first follower, and the drain electrode of NMOS tube M3 connects core voltage, and grid connects voltage tune
Assistant warden output signal anode, source electrode are the anode for driving differential voltage signal, are grounded by current source I1；NMOS tube M4 and electric current
Source I2 constitutes the second follower, and the drain electrode of NMOS tube M4 connects core voltage, and grid connects voltage regulation stage output signal negative terminal,
Source electrode is the negative terminal for driving differential voltage signal, is grounded by current source I2.
Circuit output stage will drive the positive and negative two paths of signals of differential voltage signal to be respectively converted into switching current signal, switch
The amplitude of current signal is directly proportional to the size of differential digital voltage signal.The circuit output stage include NMOS tube M5, M6,
M7,M8.The grid of NMOS tube M5, M6 is separately connected the anode and negative terminal of driving differential voltage signal, and the drain electrode of NMOS tube M5 is
The output of switching current signal anode；The drain electrode of NMOS tube M6 is the output of switching current signal negative terminal, and the source electrode of NMOS tube M5, M6 is simultaneously
Connection is connected to Voltage Feedback grade；The grid and source electrode of NMOS tube M7 are commonly connected to the grid of NMOS tube M5, the leakage of NMOS tube M7
Pole is connected to the drain electrode of NMOS tube M6；The grid and source electrode of NMOS tube M8 are commonly connected to the grid of NMOS tube M6, NMOS tube M8
Drain electrode be connected to the drain electrode of NMOS tube M5.
Voltage Feedback grade converts feedback voltage for switching current signal, feeds back to voltage regulation stage.The Voltage Feedback grade
Including resistance R4, one end of R4 is grounded, and the other end connects the source electrode of NMOS tube M5, M6 jointly, converts switching current signal to
Feedback voltage output.
4, negative-feedback clamp circuit
Negative-feedback clamp circuit 3 includes operational amplifier OPA_2, NMOS tube M9, resistance Rmodset, R5, R6, current source
The positive input mouth of I4, mirror current source I3, operational amplifier OPA_2 connect reference level VB, operational amplifier OPA_2's
Output port connects the grid of transistor M9, and the source of NMOS tube M9 is connected to the negative terminal of operational amplifier OPA_2, is formed negative anti-
Feedback, while ground is connected to by modulated resistance Rmodset, the drain terminal of NMOS tube M9 is connected to supply voltage by current source I4
Vdd1, the one end mirror current source I3 and current source I4 are connected to supply voltage simultaneously, and the other end is grounded by resistance R5, mirror image electricity
Stream source I3 and current source I4 is in mirror, generates image current, and image current flows through resistance R5 and generates reference voltage.Due to negative
Feedback effect, the voltage swing on modulated resistance (Rmodset) are equal to voltage VB, pass through the electric current on modulated resistance Rmodset
I4 size is Imodset.
The working principle of foregoing circuit are as follows:
Negative-feedback clamp circuit 3 generates the electric current I4 that size is Imodset, electric current by setting modulated resistance Rmodset
I3 is generated by electric current I4 image copying.Common mode feedback circuit 4 compares the voltage V1 that output electric current generates on resistance R4
With the size of voltage V2 of the electric current I3 on resistance R5, to adjust the electric current of electric current driving tube M10, so as to adjust electric current driving tube
M10 drain terminal voltage controls voltage using the grid end of Differential Input pipe M1, M2 and follower adjustment output driving pipe M5, M6, reaches
To required size of current.
When the voltage V1 on resistance R4 is greater than the voltage V2 on resistance R5, the output voltage of operational amplifier OPA_1 increases
Add, so that the gate source voltage of electric current driving tube M10 | Vgs | reduce, drain-source voltage | Vds | increase, C point in common mode feedback circuit 4
Voltage reduces, then by input difference pipe M1, M2, load resistance R7, R8 and buffering driving stage control output driving pipe M5, M6
Grid end voltage reduces, and reduces output electric current, so that the voltage V1 on resistance R4 reduces, until voltage V1 and voltage V2 are equal, then
The voltage of C point is constant in common mode feedback circuit 4.When the voltage V1 on resistance R4 is less than the voltage V2 on resistance R5, operation is put
The output voltage of big device OPA_1 reduces, so that the gate source voltage of electric current driving tube M10 | Vgs | increase, drain-source voltage | Vds | subtract
Small, C point voltage increases in common mode feedback circuit 4, then by input difference pipe M1, M2, load resistance R7, R8 and buffering driving stage
The grid end voltage that M3, M4, I1, I2 control output driving pipe M5, M6 increases, and increases output electric current, so that the voltage on resistance R4
V1 increases, until voltage V1 and voltage V2 are equal.
Such as: the input anode of operational amplifier OPA_1 is connected on the resistance R4 of NMOS tube M5, M6 source electrode connection, R4
The upper practical modulation size of current that generates is Imod, then it is I that voltage V1 size is generated on resistance R4mod×R4.Operational amplifier it is defeated
Enter negative terminal to be connected on resistance R5, the other end of resistance R5 connects ground, and resistance R5 connected one end is big by current source I3 injection
Small is K × ImodsetElectric current, then voltage V2=K × Imodset×R5.Pass through operational amplifier OPA_1, electric current driving tube M10 shape
At negative-feedback, voltage V1, the V2 at the both ends comparator/operational amplifier OPA_1.When the differential input end electricity of operational amplifier OPA_1
When pressing V1 and V2 unequal, operational amplifier OPA_1 can adjust grid end (A point) the control voltage of NMOS tube M10, make NMOS tube
The electric current of M10 changes, to influence the common mode electrical level variation of NMOS tube M10 drain terminal (C point).The leakage of electric current driving tube M10
The variation of (C point) current potential is held, the grid voltage of NMOS tube M5, M6 can be controlled by buffered-display driver grade NMOS tube M3, M4, is adjusted defeated
Modulation electric current I outmod, until the voltage V1 on the resistance R4 being connected with NMOS tube M5, M6 is equal with the voltage V2 on resistance R5
When, drain terminal (C point) voltage of NMOS tube M10 no longer changes, the output driving current I generated by NMOS tube M5, M6modIt will not
It changes again, size Imod=K × Imodset×R5/R4。
As shown in Fig. 2, for the exchange emulation in common mode feedback circuit (4) in CMOS technology laser drive circuit of the invention
As a result, supply voltage is 3.3V in figure.Through simulation waveform 2 as can be seen that when loop gain drops to 0dB, common-mode feedback
The phase margin of loop is 80.81 degree, can satisfy the stability requirement of system.It is several to meet in common mode feedback circuit (4)
Ten mA export current capacity, and electric current driving tube (M10) transistor, can be equivalent at rice there are a very big parasitic capacitance Cgd
The effect for strangling capacitor separates the first dominant pole and the second dominant pole, stablizes system.
As shown in figure 3, being the Transient result of CMOS technology laser drive circuit of the invention.The transmission of input signal
Rate is 1.25Gbps, and the speed of burst control signal is 50MHz.The simulation result from figure is, it can be seen that in input signal
When 1.25Gbps, the electric current of 50mA can be exported, and can guarantee that closing electric current is 0mA, guarantees circuit leakproof.Due to
It joined in simulation process to power supply, parasitic inductance over the ground, and joined encapsulation parasitic parameter model in output driving port
(RCL), so that output electric current has certain upper punching and undershoot.
As shown in figure 4, being the direct current simulation result of CMOS technology laser drive circuit of the present invention, by adjusting modulated resistance
The size of Rmodset changes the value of the voltage (V1) in common mode feedback circuit on resistance (R4), adjusts C in common mode feedback circuit 4
The dc point of point is adjusted after input difference amplifier (M1, M2, R7, R8) and buffering driving stage (M3, M4, I1, I2)
The grid voltage of whole output driving pipe M5, M6 change the size of output electric current.Pass through the simulation result of Fig. 4, it can be seen that adjustment is adjusted
Resistance Rmodset processed is from 0K~100K, and when the electric current for flowing through diode d0 is 157.73uA, the output electric current of diode d1 is
50.33mA.When diode d1 output maximum current reaches 50mA, diode d0 can be good at turning off.
The present invention, which has, a little to be needed to pay attention to:
It, can will be in common mode feedback circuit 4 when exporting electric current and exceeding 50mA as shown in figure 4, in common mode feedback circuit 4
Grid end (C point) voltage of electric current driving tube M10 is raised, after Differential Input and follower, control output driving pipe M5, M6's
Grid end differential voltage is also elevated, when the grid end voltage of control output driving pipe M5, M6 are more than the threshold value of output driving pipe M5, M6
When voltage, output driving pipe M5, M6 can be caused to leak electricity.But output driving current controls maximum leakage current when within 50mA
Small is only 157.73uA, can be ignored.
The content being not described in detail in this specification belongs to the well-known technique of professional and technical personnel in the field.
Claims (10)
1. a kind of CMOS technology laser drive circuit, it is characterised in that: including common mode feedback circuit (4), the common mode feedback circuit
(4), switching current signal is converted by differential digital voltage signal, for driving laser diode, meanwhile, receive external setting
Reference current signal the level of externally input differential digital voltage signal is adjusted, and then adjust using the principle of negative-feedback
The size of switching current signal is allowed to directly proportional to reference current signal.
2. a kind of CMOS technology laser drive circuit according to claim 1, it is characterised in that: common mode feedback circuit (4)
Including voltage regulation stage, buffered-display driver grade, circuit output stage, Voltage Feedback grade；
Voltage regulation stage receives differential digital voltage signal, the feedback voltage of comparison reference voltage and the output of Voltage Feedback grade, root
Differential digital voltage signal level is adjusted according to comparison result, i.e., when feedback voltage is greater than reference voltage, increases differential digital letter
Number level；Otherwise, the differential digital voltage signal after adjusting is sent to buffered-display driver by the level for reducing differential digital signal
Grade；
Buffered-display driver grade reduces the common mode electrical level of the differential digital voltage signal after adjusting, and obtains driving differential voltage signal, drives
The low level of moment divided voltage signal is less than the turn-on threshold voltage of circuit output stage；
Circuit output stage will drive the positive and negative two paths of signals of differential voltage signal to be respectively converted into switching current signal, switching current
The amplitude of signal is directly proportional to the size of differential digital voltage signal；
Voltage Feedback grade converts feedback voltage for switching current signal, feeds back to voltage regulation stage.
3. a kind of CMOS technology laser drive circuit according to claim 2, it is characterised in that: the voltage regulation stage packet
Include operational amplifier OPA_1, electric current driving tube M10, NMOS tube M1, M2, resistance R7, R8, R3；
The electrode input end of operational amplifier OPA_1 connects reference voltage, and negative input connects feedback voltage, output end connection
The grid of electric current driving tube M10；The source electrode of electric current driving tube M10 is connected to core voltage, and the drain electrode of electric current driving tube M10 is in parallel
Connect one end of resistance R7, R8；The grid of NMOS tube M1 and M2 are separately connected the anode and negative terminal of differential digital voltage signal,
The source electrode of NMOS tube M1 and M2 are grounded by resistance R3, and the drain electrode of NMOS tube M1 and M2 are separately connected the other end of resistance R7, R8；
The voltage signal of the drain electrode of NMOS tube M1 and M2 is the differential digital voltage signal after adjusting.
4. a kind of CMOS technology laser drive circuit according to claim 2, it is characterised in that: the buffered-display driver grade packet
Two followers being made of NMOS tube and current source are included to realize；Specifically: the buffered-display driver grade include NMOS tube M3, M4 and
Current source I1, I2；NMOS tube M3 and current source I1 constitutes the first follower, and the drain electrode of NMOS tube M3 connects core voltage, grid
Voltage regulation stage output signal anode is connected, source electrode is the anode for driving differential voltage signal, is grounded by current source I1；NMOS
Pipe M4 and current source I2 constitutes the second follower, and the drain electrode of NMOS tube M4 connects core voltage, and it is defeated that grid connects voltage regulation stage
Signal negative terminal out, source electrode are the negative terminal for driving differential voltage signal, are grounded by current source I2.
5. a kind of CMOS technology laser drive circuit according to claim 2, it is characterised in that: the circuit output stage packet
Include NMOS tube M5, M6；
The grid of NMOS tube M5, M6 is separately connected the anode and negative terminal of driving differential voltage signal, and the drain electrode of NMOS tube M5 is to open
Close the output of current signal anode；The drain electrode of NMOS tube M6 is the output of switching current signal negative terminal, the sources connected in parallel of NMOS tube M5, M6
It is connected to Voltage Feedback grade.
6. a kind of CMOS technology laser drive circuit according to claim 2, it is characterised in that: the circuit output stage is also
Including NMOS tube M7 and M8, the grid and source electrode of NMOS tube M7 are commonly connected to the grid of NMOS tube M5, the drain electrode of NMOS tube M7
It is connected to the drain electrode of NMOS tube M6；The grid and source electrode of NMOS tube M8 are commonly connected to the grid of NMOS tube M6, NMOS tube M8's
Drain electrode is connected to the drain electrode of NMOS tube M5.
7. a kind of CMOS technology laser drive circuit according to claim 2, it is characterised in that: the Voltage Feedback grade packet
Resistance R4, one end ground connection of R4 are included, the other end connects the source electrode of NMOS tube M5, M6 jointly, converts switching current signal to instead
Feedthrough voltage output.
8. a kind of CMOS technology laser drive circuit according to claim 1, it is characterised in that: further include negative-feedback clamper
Circuit (3), negative-feedback clamp circuit (3) include operational amplifier OPA_2, NMOS tube M9, resistance Rmodset, R5, current source
The positive input mouth of I4, mirror current source I3, operational amplifier OPA_2 connect reference level VB, operational amplifier OPA_2's
Output port connects the grid of transistor M9, and the source of NMOS tube M9 is connected to the negative terminal of operational amplifier OPA_2, is formed negative anti-
Feedback, while ground is connected to by modulated resistance Rmodset, the drain terminal of NMOS tube M9 is connected to I O power supply by current source I4
Vdd1, the one end mirror current source I3 and current source I4 are connected to I O power supply Vdd1 simultaneously, and the other end is grounded by resistance R5, mirror image
Current source I3 and current source I4 is in mirror, generates image current, and image current flows through resistance R5 and generates reference voltage, due to
Negative feedback, the voltage swing on modulated resistance Rmodset are equal to voltage VB, pass through the electric current on modulated resistance Rmodset
I4 size is Imodset.
9. a kind of CMOS technology laser drive circuit according to claim 1, it is characterised in that: the modulated resistance
Rmodset is adjustable resistance.
10. a kind of CMOS technology laser drive circuit according to claim 1, it is characterised in that: the common-mode feedback electricity
Road (4) supply voltage V3 is provided by embedded low-voltage difference linear constant voltage regulator LDO (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811581648.7A CN109818257B (en) | 2018-12-24 | 2018-12-24 | CMOS (complementary Metal oxide semiconductor) process laser driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811581648.7A CN109818257B (en) | 2018-12-24 | 2018-12-24 | CMOS (complementary Metal oxide semiconductor) process laser driving circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110677151A (en) * | 2019-09-25 | 2020-01-10 | 芯创智（北京）微电子有限公司 | High-speed LVDS drive circuit without common-mode feedback loop |
| CN112688161A (en) * | 2020-12-23 | 2021-04-20 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Driving current source of narrow-linewidth semiconductor laser for cold atom gyroscope |
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| CN110677151A (en) * | 2019-09-25 | 2020-01-10 | 芯创智（北京）微电子有限公司 | High-speed LVDS drive circuit without common-mode feedback loop |
| CN112688161A (en) * | 2020-12-23 | 2021-04-20 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Driving current source of narrow-linewidth semiconductor laser for cold atom gyroscope |
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