CN109817792A - A method of quantum dot is coated to micro-led array - Google Patents
A method of quantum dot is coated to micro-led array Download PDFInfo
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- CN109817792A CN109817792A CN201910112376.4A CN201910112376A CN109817792A CN 109817792 A CN109817792 A CN 109817792A CN 201910112376 A CN201910112376 A CN 201910112376A CN 109817792 A CN109817792 A CN 109817792A
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Abstract
The invention discloses a kind of methods to micro-led array coating quantum dot, which comprises micro-led array etched surface is divided into three regions；Successively it regard three regions as region to be coated；Two regions except coating zone are treated using photoresist to be coated；Using etching method by region etch to be coated at a concave domain；Determine the default distribution of quantum dot on region to be coated；The mask plate that production and the default distribution of quantum dot on region to be coated match, mask plate is placed in concave domain；Photoresist on two regions except region to be coated is removed using organic solvent；Pre-set color quantum dot corresponding with region to be coated is coated on region to be coated by the hollow out position on mask plate；Remove mask plate.The present invention carries out the printing or spin coating of quantum dot by mask, realizes the uniform quick coating of quantum dot, improves the coating efficiency and coating quality of quantum dot.
Description
Technical field
The present invention relates to spin coating technology of quantum dots fields, more particularly to a kind of to micro-led array coated weight
The method of son point.
Background technique
Currently, spin coating technology of quantum dots and other existing semiconductor processings, which have, leads to rgb pixel cross contamination
Problem；Although stamp printing can produce efficient polychrome pixelation quantum dot, technical process is excessively complicated, material damage
Consumption degree is relatively high, and cost is prohibitively expensive, for using aerosol injection printing technology in micro-led (Micro-
LED quantum dot) is uniformly sprayed on array, then there is a problem of that the rate for spraying quantum dot is slow.
Summary of the invention
The object of the present invention is to provide a kind of methods to micro-led array coating quantum dot, by mask
The printing or spin coating for carrying out quantum dot, realize the uniform quick coating of quantum dot, improve coating efficiency and the coating of quantum dot
Quality.
To achieve the above object, the present invention provides following schemes:
A method of quantum dot is coated to micro-led array, which comprises
Micro-led array etched surface is divided into three regions；
Successively it regard three regions as region to be coated；
Two regions except the region to be coated are coated using photoresist；
Using etching method by the region etch to be coated at a concave domain；
Determine the default distribution of quantum dot on the region to be coated；
The mask plate that production and the default distribution of quantum dot on the region to be coated match, the mask plate is placed
In the concave domain；
The photoresist on two regions except the region to be coated is removed using organic solvent；
Pre-set color quantum dot corresponding with the region to be coated is passed through the hollow out position on the mask plate to coat
On the region to be coated；
Remove the mask plate.
Optionally, three regions are respectively red quantum dot coating zone, green quantum dot coating zone and blue
Quantum dot coating zone.
Optionally, described that pre-set color quantum dot corresponding with the region to be coated is passed through into engraving on the mask plate
Empty position is coated on the region to be coated, is specifically included: will be described pre- using the method for spin coating, spraying, printing or vapor deposition
If color quantum spot printing overlays on the region to be coated.
Optionally, the etching method includes dry etching and wet etching.
The summary of the invention provided according to the present invention, the invention discloses following technical effects: the invention discloses it is a kind of to
The method of micro-led array coating quantum dot, by the default distribution phase with quantum dot on the region to be coated
Pre-set color quantum dot is coated on region to be coated by the mask plate matched, and is printed without single quantum dot, realizes list
Disposable all printings of color quantum dot, therefore, the present invention realizes the uniform quick coating of quantum dot, avoids pixel intersection
The coating effect of quantum dot is improved while pollution.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of method flow schematic diagram that quantum dot is coated to micro-led array of the embodiment of the present invention；
Fig. 2 is the schematic diagram of mask plate of embodiment of the present invention top view；
Fig. 3 is the schematic diagram of mask plate of embodiment of the present invention side view；
Fig. 4 is the implementation process diagram that the embodiment of the present invention coats quantum dot to micro-led array.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The object of the present invention is to provide a kind of methods to micro-led array coating quantum dot, realize quantum dot
Uniform quick coating, improve the coating efficiency and coating quality of quantum dot.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
Fig. 1 is a kind of method flow schematic diagram that quantum dot is coated to micro-led array of the embodiment of the present invention,
As shown in Figure 1, a kind of method to micro-led array coating quantum dot provided by the invention, which comprises
Step 101: micro-led array etched surface is divided into three regions；
Step 102: successively regarding three regions as region to be coated；
Step 103: two regions except the region to be coated being coated using photoresist；
Step 104: using etching method by the region etch to be coated at a concave domain；
Step 105: determining the default distribution of quantum dot on the region to be coated；
Step 106: the mask plate that production and the default distribution of quantum dot on the region to be coated match is covered described
Film version is placed in the concave domain；
Step 107: the photoresist on two regions except the region to be coated is removed using organic solvent；
Step 108: pre-set color quantum dot corresponding with the region to be coated is passed through into the hollow out on the mask plate
Position is coated on the region to be coated；
Step 109: removing the mask plate.
Wherein, in step 101, three regions are respectively red quantum dot coating zone, green quantum dot coating area
Domain and blue quantum spot printing cover region.
Wherein, in step 103, photoresist plays covering, and photoresist is coated in other two color quantum dot region
On, expose the region for needing to etch, etched surface is performed etching using acid solution, just will form a concave domain, as
Coat the region of quantum dot.And the region of other two color quantum dots is protrusion at this time, three regions are stringent to be demarcated
Come, avoids occurring cross-talk problem between quantum dot.
Wherein, step 108, it specifically includes: using the method for spin coating, spraying, printing or vapor deposition by the pre-set color amount
Son point is coated on the region to be coated.
Wherein, in step 104, the etching method includes dry etching and wet etching.
Wherein, in step 106, mask (mask) abbreviation mask is the indispensable component of photoetching process.It is held on mask
It is loaded with design configuration, light penetrates it, on a photoresist design configuration transmission.Mask plate is being related to light using very extensive
The field of carving technology is required using mask plate, such as IC (Integrated Circuit, integrated circuit), FPD (FlatPanel
Display, flat-panel monitor), PCB (Printed CircuitBoards, printed circuit board), MEMS (Micro Electro
Mechanical Systems, MEMS) etc..Mask of the present invention plays mold, will have quantum dot uniformly to divide
The mask of cloth form is as graphic arts die, and the position of hollow out is exactly the printing zone of quantum dot on mask, is realizing quantum
It while point uniformly coats, is printed without single quantum dot, realizes disposable all printings of monochromatic quantum dot；At this
In the technique of invention, mask plays positioning, buffer action, and the printing or spin coating of quantum dot are carried out on mask, realizes quantum
The uniform quick coating of point, this technology had not only avoided the cross contamination of pixel simultaneously but also had improved the coating efficiency of quantum dot；
In addition, simple photolithographic techniques and the mask plate save the cost easily prepared and easy popularization.
Micro-LED array applied by the present invention is manufactured on UV (ultraviolet) epitaxial wafer, peak value wave
A length of 395nm, chip size 5*5mm, Pixel Dimensions are 35 μm * 35 μm, and center spacing is 40 μm, are manufactured in same row
128 × 128Micro-LED pixel shares the public electrode of N-shaped GaN (gallium nitride).The model of mask used in scheme is such as
Shown in Fig. 2 and Fig. 3, intermediate hollow out position is quantum dot coating zone, and surrounding wall body can make quantum dot realize uniformly coating.
Specific implementation process of the invention is as shown in figure 4, the first step first carries out drawing for red, green, blue quantum dot coating zone
Point, the occupied area of clear three color quantum dots；Second step carries out the etching in red quantum dot region, using wet process or dry method into
Row etching, etch areas area just match mask made by Fig. 1, and concave regions 1 are etched surface, first make before etching
Coating green, blue quantum dot region with photoresist.2 be photoresist；Mask made by Fig. 1 is placed on etching by third step
Region, 3 be mask；4th step removes photoresist using organic solvent, then uses spin coating, spraying, vapor deposition or printing
Red quantum dot is coated in mask hollowed out area by technique；5th step removes mask, completes the coating of red quantum dot；The
The step of six steps are according to coated red quantum dot, first in red, blue quantum dot region coating photoresist, then using wet process or
Person's dry etching goes out green quantum dot region, and the green quantum dot region etched is placed on using new mask；7th step
Green quantum dot is coated in mask hollowed out area using spin coating, spraying, vapor deposition or printing technology；8th step, which is removed, to be covered
Template completes the coating of green quantum dot；9th step coats blue quantum dot according to the step of coated red, green quantum dot,
Complete the coating of three color quantum dots.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
Used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
Claims (4)
1. a kind of method to micro-led array coating quantum dot, which is characterized in that the described method includes:
Micro-led array etched surface is divided into three regions；
Successively it regard three regions as region to be coated；
Two regions except the region to be coated are coated using photoresist；
Using etching method by the region etch to be coated at a concave domain；
Determine the default distribution of quantum dot on the region to be coated；
The mask plate that production and the default distribution of quantum dot on the region to be coated match, is placed on institute for the mask plate
It states in concave domain；
The photoresist on two regions except the region to be coated is removed using organic solvent；
Pre-set color quantum dot corresponding with the region to be coated is coated in institute by the hollow out position on the mask plate
It states on region to be coated；
Remove the mask plate.
2. the method according to claim 1 to micro-led array coating quantum dot, which is characterized in that described
Three regions are respectively that red quantum dot coating zone, green quantum dot coating zone and blue quantum spot printing cover region.
3. the method according to claim 1 to micro-led array coating quantum dot, which is characterized in that described
By pre-set color quantum dot corresponding with the region to be coated by the hollow out position on the mask plate be coated in it is described to
It on coating zone, specifically includes: being coated in the pre-set color quantum dot using the method for spin coating, spraying, printing or vapor deposition
On the region to be coated.
4. the method according to claim 1 to micro-led array coating quantum dot, which is characterized in that described
Etching method includes dry etching and wet etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201910112376.4A CN109817792A (en) | 2019-02-13 | 2019-02-13 | A method of quantum dot is coated to micro-led array |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910112376.4A CN109817792A (en) | 2019-02-13 | 2019-02-13 | A method of quantum dot is coated to micro-led array |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021212336A1 (en) * | 2020-04-21 | 2021-10-28 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode and manufacturing method therefor |
| WO2022057453A1 (en) * | 2020-08-24 | 2022-03-24 | 北京芯海视界三维科技有限公司 | Optical material filling method and device |
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| US20120252145A1 (en) * | 2011-03-29 | 2012-10-04 | Yoo Cheol Jun | Method of manufacturing semiconductor light emitting device and mask for application of paste used therefor |
| CN102870241A (en) * | 2010-03-19 | 2013-01-09 | 美光科技公司 | Light emitting diodes and methods for manufacturing light emitting diodes |
| CN103579461A (en) * | 2013-11-08 | 2014-02-12 | 中国科学院半导体研究所 | Method for manufacturing wafer full-color LED display array |
| CN104752589A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | Preparation method and device for wafer grade white-light LED chip |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102870241A (en) * | 2010-03-19 | 2013-01-09 | 美光科技公司 | Light emitting diodes and methods for manufacturing light emitting diodes |
| US20120252145A1 (en) * | 2011-03-29 | 2012-10-04 | Yoo Cheol Jun | Method of manufacturing semiconductor light emitting device and mask for application of paste used therefor |
| CN103579461A (en) * | 2013-11-08 | 2014-02-12 | 中国科学院半导体研究所 | Method for manufacturing wafer full-color LED display array |
| CN104752589A (en) * | 2013-12-31 | 2015-07-01 | 晶能光电（江西）有限公司 | Preparation method and device for wafer grade white-light LED chip |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021212336A1 (en) * | 2020-04-21 | 2021-10-28 | 重庆康佳光电技术研究院有限公司 | Micro light-emitting diode and manufacturing method therefor |
| US11942570B2 (en) | 2020-04-21 | 2024-03-26 | Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. | Micro light-emitting diode comprising nanoring and manufacturing method thereof |
| WO2022057453A1 (en) * | 2020-08-24 | 2022-03-24 | 北京芯海视界三维科技有限公司 | Optical material filling method and device |
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Application publication date: 20190528 |