CN109817773A - A kind of LED epitaxial structure and preparation method thereof, LED chip - Google Patents
A kind of LED epitaxial structure and preparation method thereof, LED chip Download PDFInfo
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Abstract
The present invention provides a kind of LED epitaxial structure and preparation method thereof, LED chip, LED epitaxial structure includes: sub- epitaxial structure, is located on a substrate；P-type doped structure is located on sub- epitaxial structure, and p-type doped structure includes overlapping p-type Al of N number of perioda1Inb1Ga1‑a1‑b1N layers, p-type Ala2Inb2Ga1‑a2‑b2N layers and p-type Ala3Inb3Ga1‑a3‑b3N layers, and each period is followed successively by p-type Al from the bottom to topa1Inb1Ga1‑a1‑b1N layers, Ala2Inb2Ga1‑a2‑b2N layers and Ala3Inb3Ga1‑a3‑b3It N layers, can be improved the hole injection efficiency of p-type doped structure, to promote the harmony that electrons and holes are distributed in multiple quantum wells region, effectively improve the recombination probability of electrons and holes, the luminous efficiency of LED is made to get a promotion.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing field, in particular to a kind of LED epitaxial structure and preparation method thereof,
LED chip.
Background technique
As scientific and technological progress and new energy develop, light emitting diode (Light Emitting Diode, abbreviation LED)
Using more and more extensive.LED is a kind of semiconducting solid luminescent device, using semiconductor PN as luminescent material, and
LED hole mobility (the about 10cm of GaN base2/ Vs) well below electron mobility (about 300cm2/ Vs), then, in the led
It is easy to appear electron transfer and goes out multi-quantum pit structure, and hole difficulty migrates that (i.e. hole injection efficiency is inclined to multi-quantum pit structure
It is low) the phenomenon that, then there are the unbalanced phenomenons of electrons and holes concentration distribution in the multi-quantum pit structure of LED, so that hole
It is relatively low with the recombination probability of electronics, to seriously limit the promotion of LED luminous efficiency.
Therefore, to solve the above-mentioned problems, it is necessary to a kind of LED epitaxial structure and preparation method thereof be provided, effectively improved
The recombination probability in hole and electronics, to improve the luminous efficiency of LED.
Summary of the invention
In order to solve the above technical problems, on the one hand, the present invention provides a kind of LED epitaxial structure, comprising:
Sub- epitaxial structure is located on a substrate；
P-type doped structure is located on the sub- epitaxial structure, and the p-type doped structure includes overlapping p-type of N number of period
Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, and each period is from the bottom to top
It is followed successively by p-type Ala1Inb1Ga1-a1-b1N layers, Ala2Inb2Ga1-a2-b2N layers and Ala3Inb3Ga1-a3-b3N layers；
Wherein, N >=1, and N is integer；The p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type
Ala3Inb3Ga1-a3-b3Composition a1, a2 and a3 in N layers containing Al is between 0~1, and composition b1, b2 and b3 containing In are 0~1
Between, a1+b1, a2+b2, a3+b3 are between 0~1.
Optionally, from a cycle to the n-th period, the p-type Ala1Inb1Ga1-a1-b1Composition a1 in N layers containing Al
Taper off variation, the p-type Ala2Inb2Ga1-a2-b2Composition a2 in N layers containing Al tapers off variation, the p-type
Ala3Inb3Ga1-a3-b3Composition a3 in N layers containing Al tapers off variation.
Optionally, from a cycle to the n-th period, the p-type Ala1Inb1Ga1-a1-b1Composition b1 in N layers containing In
In incremental variations, the p-type Ala2Inb2Ga1-a2-b2Composition b2 in N layers containing In is in incremental variations, the p-type
Ala3Inb3Ga1-a3-b3Composition b3 in N layers containing In is in incremental variations.
Further, in each period, the p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and P
Type Ala3Inb3Ga1-a3-b3Composition in N layers containing Al is from high to low successively are as follows: Ala1Inb1Ga1-a1-b1N layers of p-type, p-type
Ala3Inb3Ga1-a3-b3N layers and p-type Ala2Inb2Ga1-a2-b2N layers；In each period, the p-type
Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Composition in N layers containing In by height to
It is low to be followed successively by p-type Ala2Inb2Ga1-a2-b2N layers, Ala3Inb3Ga1-a3-b3N and p-type Ala1Inb1Ga1-a1-b1N layers.
Optionally, the Mg doping concentration of the p-type doped structure is 5e19cm-3~1.5e21cm-3, the p-type doping knot
The range of the thickness of structure includes 30nm~100nm.
Further, from a cycle to the n-th period, the p-type Ala1Inb1Ga1-a1-b1Mg doping concentration in N layers
In incremental variations, the p-type Ala2Inb2Ga1-a2-b2Doping concentration is in incremental variations, the p-type in N layer 320
Ala3Inb3Ga1-a3-b3Mg doping concentration is in incremental variations in N layers；In each period, the p-type Ala1Inb1Ga1-a1-b1N layers,
P-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Mg doping concentration is from high to low successively in N layers are as follows: p-type
Ala2Inb2Ga1-a2-b2N layers, p-type Ala3Inb3Ga1-a3-b3N layers, p-type Ala1Inb1Ga1-a1-b1N layers.
On the other hand, the present invention also provides a kind of LED chips, comprising:
Substrate；And
LED epitaxial structure as described above.
In another aspect, preparing above-mentioned LED epitaxial structure, institute the present invention also provides a kind of preparation method of LED epitaxial structure
Stating preparation method includes:
One substrate is provided；
Sub- epitaxial structure is formed over the substrate；And
P-type doped structure is formed on the sub- epitaxial structure, the p-type doped structure includes overlapping p-type of N number of period
Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, and each period is from the bottom to top
It is followed successively by p-type Ala1Inb1Ga1-a1-b1N layers, Ala2Inb2Ga1-a2-b2N layers and Ala3Inb3Ga1-a3-b3N layers；Wherein, N >=1, and N is
Integer；The p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Contain Al in N layers
Composition a1, a2 and a3 between 0~1, composition b1, b2 and b3 containing In are between 0~1, a1+b1, a2+b2, a3+b3
Between 0~1.
Optionally, the range of the technological temperature of the p-type doped structure includes: 800 DEG C~1000 DEG C.
Further, from a cycle to the n-th period, the p-type Ala1Inb1Ga1-a1-b1N layers of technological temperature is in
Successively decrease variation, the p-type Ala2Inb2Ga1-a2-b2N layers of technological temperature tapers off variation, the p-type Ala3Inb3Ga1-a3-b3N layers
Technological temperature taper off variation.In each period, the p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N
Layer and p-type Ala3Inb3Ga1-a3-b3N layers of technological temperature is from high to low successively are as follows: p-type Ala1Inb1Ga1-a1-b1N layers, p-type
Ala3Inb3Ga1-a3-b3N layers, p-type Ala2Inb2Ga1-a2-b2N layers.
Compared with prior art, the invention has the following advantages:
LED epitaxial structure of the present invention includes: sub- epitaxial structure, is located on a substrate；P-type doped structure, is located at
On the sub- epitaxial structure, the p-type doped structure includes overlapping p-type Al of N number of perioda1Inb1Ga1-a1-b1N layers, p-type
Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, and each period is followed successively by p-type from the bottom to top
Ala1Inb1Ga1-a1-b1N layers, Ala2Inb2Ga1-a2-b2N layers and Ala3Inb3Ga1-a3-b3N layers；Wherein, N >=1, and N is integer；It is described
P-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Composition a1 in N layers containing Al,
A2 and a3 is between 0~1, and composition b1, b2 and b3 containing In are between 0~1, and a1+b1, a2+b2, a3+b3 are 0~1
Between.It include the p-type Al overlapped in N number of period because being provided on the sub- epitaxial structurea1Inb1Ga1-a1-b1N layers, p-type
Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, it can be improved the hole injection efficiency of p-type doped structure, thus
The harmony that electrons and holes are distributed in multi-quantum pit structure is promoted, the recombination probability of electrons and holes is effectively improved, makes LED
Luminous efficiency get a promotion.
Further, the component containing Al in the p-type doped structure and the component containing In is optimized in the present invention, energy
Enough optimized effects for embodying the p-type doped structure to hole injection efficiency is improved, thus significantly more efficient raising electronics
With the recombination probability in hole, the luminous efficiency of LED is made to get a promotion.
Detailed description of the invention
Fig. 1 is a kind of flow chart of the preparation method of LED epitaxial structure of one embodiment of the invention；
Fig. 2 to Fig. 4 is extension in a kind of each processing step of the preparation method of LED epitaxial structure of one embodiment of the invention
The schematic diagram of structure.
Description of symbols:
100- substrate；
The sub- epitaxial structure of 200-；210- buffer layer；220- non-doped layer；230-N type doped layer；240- stress regulating course；
250- multi-quantum pit structure；260-P type electronic barrier layer；
300-P type doped structure；310-P type Ala1Inb1Ga1-a1-b1N layers；320-P type Ala2Inb2Ga1-a2-b2N layers；330-
P-type Ala3Inb3Ga1-a3-b3N layers.
Specific embodiment
Below in conjunction with flow chart and schematic diagram to a kind of LED epitaxial structure of the invention and preparation method thereof, LED chip
It is described in more detail, which show the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify
Invention described herein, and still realize advantageous effects of the invention.Therefore, following description should be understood as ability
Field technique personnel's is widely known, and is not intended as limitation of the present invention.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.According to following explanation, the present invention
The advantages of and feature will become apparent from.It should be noted that attached drawing is all made of very simplified form and uses non-accurate ratio,
Only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 1 is a kind of flow chart of the preparation method of LED epitaxial structure of the present embodiment.As shown in Figure 1, the present embodiment is also
Provide a kind of preparation method of LED epitaxial structure, comprising the following steps:
Step S1: a substrate is provided；
Step S2: sub- epitaxial structure is formed over the substrate；And
Step S3: forming p-type doped structure on the sub- epitaxial structure, and the p-type doped structure includes handing in N number of period
Folded p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, and each period
It is followed successively by p-type Al from the bottom to topa1Inb1Ga1-a1-b1N layers, Ala2Inb2Ga1-a2-b2N layers and Ala3Inb3Ga1-a3-b3N layers；Wherein, N
>=1, and N is integer；The p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N
Composition a1, a2 and a3 containing Al are between 0~1 in layer, and composition b1, b2 and b3 containing In are between 0~1, a1+b1, a2+
B2, a3+b3 are between 0~1.
It is described in detail below with reference to a kind of preparation method of LED epitaxial structure of Fig. 1~4 pair embodiment of the present invention.
Fig. 2 is the schematic diagram of the section structure of substrate provided by the present embodiment.As shown in Fig. 2, step S1 is first carried out, mention
For a substrate 100.The substrate 100 is, for example, Sapphire Substrate, GaN substrate, AlN substrate, AlGaN substrate, Si substrate or SiC
The compound substrate of one of substrate substrate or several substrates.The substrate 100 of the present embodiment is Sapphire Substrate.
Fig. 3 is the schematic diagram of the section structure after the sub- epitaxial structure that the present embodiment is formed.As shown in figure 3, then executing step
Rapid S2 forms sub- epitaxial structure 200 on the substrate 100.
In this step, the sub- epitaxial structure 200 can select MOCVD (Metallo-Organic Chemical Vapor deposition) method,
CVD (chemical vapor deposition) method, PECVD (plasma enhanced chemical vapor deposition) method, MBE (molecular beam epitaxy) method
Or HVPE (hydride gas-phase epitaxy) method etc., in the present embodiment, epitaxial growth method can preferred MOCVD method, herein simultaneously
Without limitation.
The sub- epitaxial structure 200 includes being sequentially overlapped buffer layer 210, non-doped layer 220, N on the substrate 100
Type doped layer 230 and multi-quantum pit structure 250.The buffer layer 210 is raw to improve LED extension for improving lattice match
Long crystal quality.210 material of buffer layer can be at least one of GaN, AlGaN and InAlGaN, not limit specifically
System.The technological temperature of the buffer layer 210 can between 500 DEG C~900 DEG C, the pressure of reaction chamber can 100Torr~
Between 600Torr (support), the thickness of the buffer layer 210 is about 10nm~40nm.The non-doped layer 220 for reduce due to
Lattice mismatch caused by lattice constant difference between substrate 100 and n-type doping layer 230, and the non-doped layer 220 can
Enhance the crystal property for the semiconductor layer being formed on this layer.The material of the non-doped layer 220 can for GaN, AlGaN and
At least one of InAlGaN, specifically with no restrictions.The technological temperature of the non-doped layer 220 can be at 900 DEG C~1200 DEG C
Between, the pressure of reaction chamber can between 100Torr~600Torr, the non-doped layer 220 with a thickness of 2 μm~4 μm.
The material of the n-type doping layer 230 may be at least one of GaN, AlGaN and InAlGaN, specifically with no restrictions.Institute
State n-type doping layer 230 technological temperature can between 1000 DEG C~1200 DEG C, the pressure of reaction chamber can 100Torr~
Between 400Torr, the n-type doping layer 230 with a thickness of 2 μm~4 μm, the Si doping concentration of the N-type nitride layer can be with
For 1.5e19cm-3~3e19cm-3.The multi-quantum pit structure 250 includes the potential well layer and barrier layer of period stacking.It is described more
The potential well layer and barrier layer that quantum well structure 250 can be laminated by 6~12 groups of periods form.The potential well layer with a thickness of 2nm
~4nm, the barrier layer with a thickness of 4nm~7nm, the technological temperature of the multi-quantum pit structure 250 is at 700 DEG C~1000 DEG C
Between, the material of the potential well layer and barrier layer may each be the ternarys such as InGaN, InAlGaN comprising In element or quaternary material
Material, wherein the component of Al can be between 0~50%；The component of In can be between 0~50%.
In order to further improve epitaxial structure crystal quality and epitaxial structure stress release, in n-type doping layer
A ply stress regulating course 240 is also formed between 230 and multi-quantum pit structure 250, the stress regulating course 240 can be by being greater than 10
The Al that the group period overlapsx1Iny1Ga1-x1-y1N layers and Alx2Iny2Ga1-x2-y2N layers of composition, wherein the component x1 and x2 of Al can be with
Between 0~50%；The component y1 and y2 of In can be between 0~50%.The Alx1Iny1Ga1-x1-y1N layers with a thickness of
2nm~4nm, the Alx2Iny2Ga1-x2-y2N layers with a thickness of 1nm~3nm.The technological temperature of the stress regulating course 240 exists
Between 700 DEG C~1000 DEG C.In order to stop electron transfer to go out in multi-quantum pit structure 250, and increase multi-quantum pit structure 250
The recombination probability of electronics and hole, it can the internal quantum efficiency for improving Quantum Well goes back shape on the multi-quantum pit structure 250
At one layer of P-type electron barrier layer 260, the material of the P-type electron barrier layer 260 can be p-type AlGaN, p-type AlInGaN and P
At least one of type InGaN, the P-type electron barrier layer 260 can also be superlattice structure, specifically the P with no restrictions
The Mg doping concentration of type electronic barrier layer 260 is 2e19cm-3~1.5e20cm-3, the P-type electron barrier layer 260 with a thickness of
30 μm~40 μm.
Fig. 4 is the schematic diagram of the section structure after the p-type doped structure that the present embodiment is formed.As shown in figure 4, then executing step
Rapid S3, forms p-type doped structure 300 on the sub- epitaxial structure 200, and the p-type doped structure 300 is handed over including N number of period
Folded p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320 and p-type Ala3Inb3Ga1-a3-b3N layer 330, and
Each period is followed successively by p-type Al from the bottom to topa1Inb1Ga1-a1-b1N layer 310, Ala2Inb2Ga1-a2-b2320 He of N layer
Ala3Inb3Ga1-a3-b3N layer 330；Wherein, N >=1, and N is integer；The p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type
Ala2Inb2Ga1-a2-b2N layer 320 and p-type Ala3Inb3Ga1-a3-b3Composition a1, a2 and a3 in N layer 330 containing Al 0~1 it
Between, composition b1, b2 and b3 containing In are between 0~1, and a1+b1, a2+b2, a3+b3 are between 0~1.The p-type doping
Structure 300 can be improved the hole concentration of p-type doped structure 300 and the migration rate in hole, to promote electrons and holes
The harmony being distributed in multiple quantum wells region effectively improves the recombination probability of electrons and holes, obtains the luminous efficiency of LED
It is promoted.
Wherein, the p-type doped structure 300 with a thickness of 30nm~100nm, the p-type Ala1Inb1Ga1-a1-b1N layer 310
With a thickness of 0~30nm, the p-type Ala2Inb2Ga1-a2-b2N layer 320 is with a thickness of 0~50nm, p-type Ala3Inb3Ga1-a3-b3N layer 330
With a thickness of 0~20nm.And the p-type Ala1Inb1Ga1-a1-b1N layer 310, Ala2Inb2Ga1-a2-b2320 He of N layer
Ala3Inb3Ga1-a3-b3The thickness of N layer 330 is descending successively are as follows: p-type Ala2Inb2Ga1-a2-b2N layer 320, p-type
Ala1Inb1Ga1-a1-b1N layer 310 and Ala3Inb3Ga1-a3-b3N layer 330.
The Mg doping concentration of the p-type doped structure 300 is 5e19cm-3~1.5e21cm-3.Preferably, from the first week
Phase to n-th period, the p-type Ala1Inb1Ga1-a1-b1The Mg doping concentration of N layer 310 is in incremental variations, the p-type
Ala2Inb2Ga1-a2-b2The Mg doping concentration of N layer 320 is in incremental variations, the p-type Ala3Inb3Ga1-a3-b3The Mg of N layer 330 is adulterated
Concentration is in incremental variations.In each period, the p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320
With p-type Ala3Inb3Ga1-a3-b3The Mg doping concentration of N layer 330 is from high to low successively are as follows: p-type Ala2Inb2Ga1-a2-b2N layer 320, P
Type Ala3Inb3Ga1-a3-b3N layer 330 and p-type Ala1Inb1Ga1-a1-b1N layer 310.
Preferably, from a cycle to the n-th period, the p-type Ala1Inb1Ga1-a1-b1Composition containing Al in N layer 310
A1 tapers off variation, the p-type Ala2Inb2Ga1-a2-b2Composition a2 in N layer 320 containing Al tapers off variation, the p-type
Ala3Inb3Ga1-a3-b3Composition a3 in N layer 330 containing Al tapers off variation；It is described meanwhile from a cycle to the n-th period
P-type Ala1Inb1Ga1-a1-b1Composition b1 in N layer 310 containing In is in incremental variations, the p-type Ala2Inb2Ga1-a2-b2In N layer 320
Composition b2 containing In is in incremental variations, the p-type Ala3Inb3Ga1-a3-b3Composition b3 in N layer 330 containing In is in incremental variations, with
The p-type Al that the formation period overlapsa1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320 and p-type
Ala3Inb3Ga1-a3-b3The energy band of N layer 330, can from being from the bottom to top in the variation tendency being gradually reduced close to multi-quantum pit structure 250
To effectively prevent electron transfer to go out quantum well region, more holes can be further provided for, reinforce the injection efficiency in hole, i.e.,
P-type doped structure described in the present embodiment optimized can embody its effect to hole injection efficiency is improved, thus more
The effective recombination probability for improving electrons and holes, makes the luminous efficiency of LED get a promotion.
Preferably, in each period, the p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320
With p-type Ala3Inb3Ga1-a3-b3The composition containing Al is from high to low successively in N layer 330 are as follows: Ala1Inb1Ga1-a1-b1N layers of p-type
310, p-type Ala3Inb3Ga1-a3-b3N layer 330 and p-type Ala2Inb2Ga1-a2-b2N layer 320；In each period, the p-type
Ala1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320 and p-type Ala3Inb3Ga1-a3-b3Group containing In in N layer 330
At being followed successively by p-type Al from high to lowa2Inb2Ga1-a2-b2N layers, Ala3Inb3Ga1-a3-b3N and p-type Ala1Inb1Ga1-a1-b1N layers.Due to
The forbidden bandwidth (Bandgap) of AlN, GaN and InN are respectively 6.2eV, 3.4eV and 0.7eV (electron-volt), pass through allotment
The composition of Al, In and Ga in AlInGaN, so that p-type Ala1Inb1Ga1-a1-b1The forbidden bandwidth of N layer 310 is maximum；Followed by p-type
Ala3Inb3Ga1-a3-b3N layer 330 is finally the least p-type Al of composition containing Ala2Inb2Ga1-a2-b2N layer 320.
It in the present embodiment, include the p-type Al overlapped in 3 periods with the p-type doped structure 300a1Inb1Ga1-a1-b1N layers
310, p-type Ala2Inb2Ga1-a2-b2N layer 320 and p-type Ala3Inb3Ga1-a3-b3For N layer 330, P described in the present embodiment is specifically described
Type doped structure 300 and preparation method.Such as: from the period 1 to the period 3, the p-type Ala1Inb1Ga1-a1-b1N layers
Composition a1 in 310 containing Al is followed successively by 40%, 30% and 20%, the p-type Ala2Inb2Ga1-a2-b2Composition containing Al in N layer 320
A2 is followed successively by 30%, 20% and 10%, the p-type Ala3Inb3Ga1-a3-b3Composition a3 in N layer 330 containing Al is followed successively by 35%,
25% and 15%.From the period 1 to the period 3, the p-type Ala1Inb1Ga1-a1-b1Composition b1 in N layer 310 containing In is successively
It is 10%, 20% and 30%, the p-type Ala2Inb2Ga1-a2-b2Composition b2 in N layer 320 containing In is followed successively by 20%, 30% and
40%, the p-type Ala3Inb3Ga1-a3-b3Composition b3 in N layer 330 containing In is followed successively by 15%, 25% and 35%.As shown in figure 4,
By the sub- epitaxial structure 200 that the LED epitaxial structure that above-mentioned preparation method obtains includes: on a substrate 100, the son is outer
Prolonging structure 200 includes being sequentially overlapped buffer layer 210, non-doped layer 220, n-type doping layer 230, volume on the substrate 100
Sub- well structure 250；P-type doped structure 300 on the sub- epitaxial structure 200, the p-type doped structure 300 include N number of
The p-type Al that period overlapsa1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320 and p-type Ala3Inb3Ga1-a3-b3N layers
330, and each period is followed successively by p-type Al from the bottom to topa1Inb1Ga1-a1-b1N layer 310, Ala2Inb2Ga1-a2-b2320 He of N layer
Ala3Inb3Ga1-a3-b3N layer 330, wherein from a cycle to the n-th period, the p-type Ala1Inb1Ga1-a1-b1N layer 310
In the composition a1 containing Al taper off variation, the p-type Ala2Inb2Ga1-a2-b2Composition a2 in N layer 320 containing Al tapers off variation,
The p-type Ala3Inb3Ga1-a3-b3Composition a3 in N layer 330 containing Al tapers off variation；The p-type Ala1Inb1Ga1-a1-b1N layers
Composition b1 in 310 containing In is in incremental variations, the p-type Ala2Inb2Ga1-a2-b2Composition b2 in N layer 320 containing In becomes in incremental
Change, the p-type Ala3Inb3Ga1-a3-b3Composition b3 in N layer 330 containing In is in incremental variations；In each period, the p-type
Ala1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320 and p-type Ala3Inb3Ga1-a3-b3Group containing Al in N layer 330
At from high to low successively are as follows: p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type Ala3Inb3Ga1-a3-b3N layer 330 and p-type
Ala2Inb2Ga1-a2-b2N layer 320；In each period, the p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type
Ala2Inb2Ga1-a2-b2N layer 320 and p-type Ala3Inb3Ga1-a3-b3The composition containing In is followed successively by p-type from high to low in N layer 330
Ala2Inb2Ga1-a2-b2N layers, Ala3Inb3Ga1-a3-b3N and p-type Ala1Inb1Ga1-a1-b1N layers.Obviously, the LED epitaxial structure is simultaneously
Above-mentioned preparation method is not limited by obtain.
In this step, the range of the technological temperature of the p-type doped structure 300 includes: 800 DEG C~1000 DEG C.From
A cycle is to n-th period, the p-type Ala1Inb1Ga1-a1-b1The technological temperature of N layer 310 tapers off variation, the p-type
Ala2Inb2Ga1-a2-b2The technological temperature of N layer 320 tapers off variation, the p-type Ala3Inb3Ga1-a3-b3The technological temperature of N layer 330
Taper off variation；In each period, the p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type Ala2Inb2Ga1-a2-b2N layer 320 and P
Type Ala3Inb3Ga1-a3-b3The technological temperature of N layer 330 is from high to low successively are as follows: p-type Ala1Inb1Ga1-a1-b1N layer 310, p-type
Ala3Inb3Ga1-a3-b3N layer 330, p-type Ala2Inb2Ga1-a2-b2N layer 320.
The present embodiment further includes a kind of LED chip, including substrate and above-mentioned epitaxial structure, and the epitaxial structure is located at described
On substrate.
To sum up, LED epitaxial structure of the present invention includes: sub- epitaxial structure, is located on a substrate；P-type doped structure,
On the sub- epitaxial structure, the p-type doped structure includes overlapping p-type Al of N number of perioda1Inb1Ga1-a1-b1N layers, p-type
Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, and each period is followed successively by p-type from the bottom to top
Ala1Inb1Ga1-a1-b1N layers, Ala2Inb2Ga1-a2-b2N layers and Ala3Inb3Ga1-a3-b3N layers；Wherein, N >=1, and N is integer；It is described
P-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Composition a1 in N layers containing Al,
A2 and a3 is between 0~1, and composition b1, b2 and b3 containing In are between 0~1, and a1+b1, a2+b2, a3+b3 are 0~1
Between.It include the p-type Al overlapped in N number of period because being provided on the sub- epitaxial structurea1Inb1Ga1-a1-b1N layers, p-type
Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, it can be improved the hole injection efficiency of p-type doped structure, thus
The harmony that electrons and holes are distributed in multiple quantum wells region is promoted, the recombination probability of electrons and holes is effectively improved, makes LED
Luminous efficiency get a promotion.
Further, the component containing Al in the p-type doped structure and the component containing In is optimized in the present invention, energy
Enough optimized effects for embodying the p-type doped structure to hole injection efficiency is improved, thus significantly more efficient raising electronics
With the recombination probability in hole, the luminous efficiency of LED is made to get a promotion.
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible changes and modifications all are made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of variation.Therefore, anything that does not depart from the technical scheme of the invention are right according to the technical essence of the invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments, all of which are still within the scope of protection of the technical scheme of the invention.
Claims (10)
1. a kind of LED epitaxial structure characterized by comprising
Sub- epitaxial structure is located on a substrate；
P-type doped structure is located on the sub- epitaxial structure, and the p-type doped structure includes overlapping p-type of N number of period
Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, and each period is from the bottom to top
It is followed successively by p-type Ala1Inb1Ga1-a1-b1N layers, Ala2Inb2Ga1-a2-b2N layers and Ala3Inb3Ga1-a3-b3N layers；
Wherein, N >=1, and N is integer；The p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type
Ala3Inb3Ga1-a3-b3Composition a1, a2 and a3 in N layers containing Al is between 0~1, and composition b1, b2 and b3 containing In are 0~1
Between, a1+b1, a2+b2, a3+b3 are between 0~1.
2. LED epitaxial structure as described in claim 1, which is characterized in that from a cycle to the n-th period, the p-type
Ala1Inb1Ga1-a1-b1Composition a1 in N layers containing Al tapers off variation, the p-type Ala2Inb2Ga1-a2-b2Containing the composition of Al in N layers
A2 tapers off variation, the p-type Ala3Inb3Ga1-a3-b3Composition a3 in N layers containing Al tapers off variation.
3. LED epitaxial structure as described in claim 1, which is characterized in that from a cycle to the n-th period, the p-type
Ala1Inb1Ga1-a1-b1Composition b1 in N layers containing In is in incremental variations, the p-type Ala2Inb2Ga1-a2-b2Containing the composition of In in N layers
B2 is in incremental variations, the p-type Ala3Inb3Ga1-a3-b3Composition b3 in N layers containing In is in incremental variations.
4. LED epitaxial structure as claimed in claim 2 or claim 3, which is characterized in that in each period, the p-type
Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Composition in N layers containing Al by height to
It is low successively are as follows: p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala3Inb3Ga1-a3-b3N layers and p-type Ala2Inb2Ga1-a2-b2N layers；Each
In period, the p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Contain in N layers
The composition of In is followed successively by p-type Al from high to lowa2Inb2Ga1-a2-b2N layers, Ala3Inb3Ga1-a3-b3N and p-type Ala1Inb1Ga1-a1-b1N
Layer.
5. LED epitaxial structure as claimed in any one of claims 1-3, which is characterized in that the Mg of the p-type doped structure mixes
Miscellaneous concentration is 5e19cm-3~1.5e21cm-3, the range of the thickness of the p-type doped structure includes 30nm~100nm.
6. LED epitaxial structure as described in any of claims 5, which is characterized in that all from a cycle to n-th
Phase, the p-type Ala1Inb1Ga1-a1-b1N layers of Mg doping concentration is in incremental variations, the p-type Ala2Inb2Ga1-a2-b2N layer 320
Doping concentration be in incremental variations, the p-type Ala3Inb3Ga1-a3-b3N layers of Mg doping concentration is in incremental variations；In each period
In, the p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers of Mg doping
Concentration is from high to low successively are as follows: p-type Ala2Inb2Ga1-a2-b2N layers, p-type Ala3Inb3Ga1-a3-b3N layers, p-type Ala1Inb1Ga1-a1-b1N
Layer.
7. a kind of LED chip characterized by comprising
Substrate；And
Such as LED epitaxial structure according to any one of claims 1 to 6.
8. a kind of preparation method of LED epitaxial structure, preparation such as LED epitaxial structure of any of claims 1-6,
It is characterized in that, the preparation method includes:
One substrate is provided；
Sub- epitaxial structure is formed over the substrate；And
P-type doped structure is formed on the sub- epitaxial structure, the p-type doped structure includes overlapping p-type of N number of period
Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers, and each period is from the bottom to top
It is followed successively by p-type Ala1Inb1Ga1-a1-b1N layers, Ala2Inb2Ga1-a2-b2N layers and Ala3Inb3Ga1-a3-b3N layers；Wherein, N >=1, and N is
Integer；The p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3Contain Al in N layers
Composition a1, a2 and a3 between 0~1, composition b1, b2 and b3 containing In are between 0~1, a1+b1, a2+b2, a3+b3
Between 0~1.
9. preparation method as claimed in claim 8, which is characterized in that the range packet of the technological temperature of the p-type doped structure
It includes: 800 DEG C~1000 DEG C.
10. preparation method as claimed in claim 9, which is characterized in that from a cycle to the n-th period, the p-type
Ala1Inb1Ga1-a1-b1N layers of technological temperature tapers off variation, the p-type Ala2Inb2Ga1-a2-b2N layers of technological temperature tapers off
Variation, the p-type Ala3Inb3Ga1-a3-b3N layers of technological temperature tapers off variation；In each period, the p-type
Ala1Inb1Ga1-a1-b1N layers, p-type Ala2Inb2Ga1-a2-b2N layers and p-type Ala3Inb3Ga1-a3-b3N layers of technological temperature is from high to low
Successively are as follows: p-type Ala1Inb1Ga1-a1-b1N layers, p-type Ala3Inb3Ga1-a3-b3N layers, p-type Ala2Inb2Ga1-a2-b2N layers.
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| CN112259651A (en) * | 2020-10-21 | 2021-01-22 | 厦门乾照光电股份有限公司 | LED chip with P-type insertion layer and manufacturing method |
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