CN109813206B - Capacitive displacement sensor probe based on conductive film - Google Patents
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- CN109813206B CN109813206B CN201910159511.0A CN201910159511A CN109813206B CN 109813206 B CN109813206 B CN 109813206B CN 201910159511 A CN201910159511 A CN 201910159511A CN 109813206 B CN109813206 B CN 109813206B
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- 238000006073 displacement reaction Methods 0.000 title claims abstract description 40
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
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- 239000011521 glass Substances 0.000 claims description 3
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- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
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- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 15
- 238000005259 measurement Methods 0.000 abstract description 8
- 238000009434 installation Methods 0.000 abstract description 3
- 238000007789 sealing Methods 0.000 abstract 3
- 230000000694 effects Effects 0.000 description 11
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- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
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Abstract
The invention discloses a capacitance displacement sensor probe based on a conductive film, wherein a cylindrical insulating substrate with the conductive film and a through hole filled with a conductive material is fixed on an annular support at one end of a cylindrical metal shell through a screwing device and a sealing ring; one surface of the insulating substrate with the conductive film is contacted with the support frame, and the contact part is not provided with the conductive film; the sealing ring is positioned on one surface of the insulating substrate without the conductive film, and the precession device is contacted with the sealing ring; the conductive film has a Kerr guard ring structure and consists of an insulating and separating round conductive film with a concentric complete surface and an annular conductive film with a complete surface; the conductive material is positioned in the through hole, one end of the conductive material is communicated with the circular conductive film, and the other end of the conductive material is used as a pin. The invention improves the electric field uniformity of the single-electrode capacitance displacement sensor; the parallelism of the surface of the conductive film and the surface of the support frame is improved, and the installation precision of the single-electrode capacitance displacement sensor is improved, so that the measurement precision and reliability of the capacitance displacement sensor are improved.
Description
Technical Field
The invention relates to the field of capacitance displacement sensor probes, in particular to a capacitance displacement sensor probe based on a conductive film, and especially relates to a capacitance displacement sensor probe based on a standard Kelvin guard ring structure conductive film formed by concentric round conductive films with complete surfaces and annular conductive films with complete surfaces, which are insulated and separated on an insulating substrate.
Background
The capacitance displacement sensor has the advantages of good dynamic characteristics, high resolution, simple structure and the like, is very suitable for high-precision and non-contact dynamic measurement, and has been widely used for high-precision measurement in the fields of displacement, pressure and the like. In a capacitive displacement sensor, the relationship between capacitance (C) and distance (d) between electrodes can be expressed as:
C＝ε r ε 0 A/d (1)
wherein ε r Epsilon is the relative dielectric constant of the medium between the electrodes 0 The vacuum dielectric constant is that A is the coverage area between the polar plates, and d is the polar plate spacing. The distance between the polar plates changes to cause the capacitance change of the capacitance sensor, thereby realizing the measurement of displacement, pressure and the like. The condition for the equation (1) is that the electric field between the plates of the capacitive displacement sensor is uniformly distributed. Because of the fringe electric field and the unparallel error between the polar plates, which are introduced in the manufacturing and mounting processes, the electric field distribution between the two polar plates of the capacitive displacement sensor is unparallel, but the signal of the capacitive displacement sensor is distorted along with the spatial variation. In order to minimize the electric field fringe effect and improve the uniformity of electric field distribution, a capacitive sensor probe is generally disclosed in document [1 ]]Journal Applied Physics 1975，46，2486-2490[W.C.Heerens,F.C.Vermeulen,Capacitance of kelvin guard-ring capacitors with modified edge geometry,J.Appl.Phys.46(1975)2486-2490]The electrode of the disclosed Kelvin guard ring (Kelvin Guard Ring) structure (see FIG. 3 (a)) consists of a working electrode 1 and a guard ring. In fig. 3 (b), the working electrode 2 is generally an object to be detected, and the working area thereof is much larger than that of the working electrode 1. During operation, the working electrode 1 and the guard ring are kept at the same potential, so that the electric field edge effect is greatly reduced.
In addition, the greater the thickness of the capacitive sensor plate, the greater the electric field edge effect. In order to reduce the thickness of the electrode plate, the thin conductive film of the Kerr-Fender protection ring structure on the insulating substrate is used for replacing a thicker metal plate of the Kerr-Fender protection ring structure as an electrode, so that the electric field edge effect is reduced. However, when using a conductive film of the kelvin ring structure, in order to connect leads to the working electrode in the middle of the guard ring, the conductive film often uses a non-standard kelvin guard ring structure reported in document [3]Nature Nanotechnology 2011,6,496-500 (see fig. 4), which introduces additional electric field edge effects, compromising the capacitive displacement sensor performance.
For the inclination angle between two rectangular polar plates isReference (2) Electronics 2008, sozopol, bulgaria,15-20 gives an approximate quantitative relationship between capacitance (C) and distance (d) between electrodes, see equation (2) below:
wherein a is the width of the rectangular polar plate; l is the length of the rectangular polar plate;is the inclination angle between the two polar plates; d is the distance between the center points of the bipolar plates. As can be seen from formulas (1) and (2), there are mainly two methods for improving the displacement measurement accuracy of the capacitive displacement sensor under the condition that only the non-parallelism error of the polar plate is considered. The first is to improve the parallelism between the two polar plates and reduce the inclination angle between the polar plates as much as possible, so as to ignore the non-parallelism error. The second method is to obtain the inclination angle between two polar plates in the capacitive displacement sensor, and calibrate the inclination angle through an equation (2). However, no matter the parallelism between the two polar plates is improved or the inclination angle between the two polar plates is obtained, a reference surface is required to be endowed to the capacitive displacement sensor probe for calibration, so that the measurement accuracy is improved. For thicker metal plates with a Kerr-Fender ring structure as electrodes, the metal plate electrodes themselves can be used as reference surfaces of capacitive displacement sensor probes. And when the thin conductive film with the Kerr-Fender-ring structure on the insulating substrate is used as an electrode,since the packaging metal shell is usually used as a reference surface, when the thin conductive film of the keerfen guard ring structure on the insulating substrate is used as an electrode, improving the mounting parallelism between the insulating substrate with the conductive film and the reference surface of the metal shell is also a key for improving the measurement accuracy of the capacitance displacement sensor.
Disclosure of Invention
The purpose of the invention is that: when the conductive film of the nonstandard Kerr protection structure on the insulating substrate is used as an electrode, the capacitive displacement sensor probe is prevented from having a larger electric field edge effect, the insulating substrate with the through holes is adopted, and the holes are filled with conductive materials, so that one end of the conductive materials and one surface of the insulating substrate are ensured to be in the same plane, and simultaneously, the conductive materials are connected with the conductive film, thereby endowing the conductive film with the standard Kerr protection structure, and reducing the electric field edge effect; in addition, the part of the surface of the insulating substrate with the conductive film, which does not contain the conductive film, is directly contacted with the support taking one end of the packaging metal shell as a reference surface, so that the mounting parallelism between the insulating substrate with the conductive film and the reference surface of the metal shell is improved, and the capacitive displacement sensor probe with high precision is provided.
The technical scheme of the invention is as follows: the capacitive displacement sensor probe based on the conductive film comprises a cylindrical insulating substrate, wherein the conductive film with a complete Kerr guard ring structure is formed on the cylindrical insulating substrate, and the conductive film with the Kerr guard ring structure is obtained through a physical vapor deposition or screen printing process; the outer diameter of the annular conductive film in the conductive film of the Kerr guard ring structure is smaller than the diameter of the cylindrical insulating substrate;
in particular: the cylindrical insulating substrate is provided with two through holes, conductive materials are filled in the holes, and one end of each conductive material is in the same plane with one surface of the cylindrical insulating substrate; the other end of the conductive material is used as a lead pin;
the conductive material in the through hole of the cylindrical insulating substrate is filled by a filling or electroplating method;
the outer annular conductive film of the conductive film with the complete Kerr-Fender-ring structure is communicated with one end of the conductive material in the through hole, which is on the same plane with one surface of the cylindrical insulating substrate; the inner circular conductive film is communicated with one end of the conductive material in the other through hole, which is on the same plane with one surface of the cylindrical insulating substrate;
one surface of the cylindrical insulating substrate with the complete Kerr-Fender-ring structure conductive film is in supporting contact with one end of the cylindrical shielding metal shell, and the contact part is not provided with the conductive film; the cylindrical insulating substrate is fixed on the cylindrical shielding metal shell through the precession device, and an annular gasket is arranged between one surface of the cylindrical insulating substrate without the conductive film and the cylindrical metal precession device;
the diameter of the cylindrical insulating substrate is smaller than the outer diameter of the cylindrical shielding metal shell, but larger than the inner diameter of the support;
the outer diameter of the annular gasket is smaller than the inner diameter of the cylindrical shielding shell;
the cylindrical metal screw-in device is provided with threads on the outer side surface and is matched with the threads on the inner side surface of the cylindrical shielding metal shell;
the center of the cylindrical metal precession device is provided with a through hole for a lead;
the cylindrical insulating substrate is made of glass, quartz, silicon with a silicon oxide layer, insulating ceramic material alumina, zirconia, silicon nitride or any one (insulating ceramic) of the compound species of the alumina, the zirconia and the silicon nitride;
the conductive component in the conductive film with the complete Kelvin structure is any one of platinum, gold, silver, copper, palladium, nickel, iron, aluminum, titanium, cobalt, tungsten, molybdenum, tantalum, graphite or a compound thereof [ any one of metal, graphite or a compound thereof ].
The cylindrical metal precession device is made of stainless steel, copper alloy or aluminum alloy;
the cylindrical metal shielding shell is made of stainless steel, copper alloy or aluminum alloy;
the annular gasket is made of polytetrafluoroethylene, various insulating rubbers or metals.
The beneficial effects are that: at present, a cylindrical metal electrode of a Kerr guard ring structure capable of reducing electric field edge effect is basically adopted as a capacitance displacement sensor probe. However, the cylindrical metal electrode is thicker than the thin conductive film electrode on the insulating substrate, and introduces an additional fringe field effect. For this reason, attempts have been made to replace thicker cylindrical metal electrodes with thin conductive films on insulating substrates to further reduce the electric field edge effect. However, to facilitate electrode lead connection, the conductive film on the insulating substrate is often a non-standard kelvin guard ring structure, which may impair the effect of reducing the electric field edge effect, ultimately affecting the performance of the capacitive displacement sensor.
The beneficial effects of the invention are as follows:
compared with the prior art, in the invention, two through holes are introduced in the insulating substrate and filled with conductive materials, one ends of the conductive materials in the two through holes are respectively communicated with an inner circular conductive film and an outer annular conductive film in the conductive film with the standard Kerr-Fender structure, and the other ends of the conductive materials in the two through holes are used as lead pins of the conductive film with the standard Kerr-Fender protection ring structure and finally used as probe electrodes of the capacitive displacement sensor; in addition, when the probe electrode of the capacitance displacement sensor is fixedly installed, the part, which is provided with the conductive film, of the surface of the insulating substrate and does not contain the conductive film is directly contacted with the support, which is used as the reference surface, of one end of the packaging metal shell, so that the installation parallelism between the insulating substrate with the conductive film and the reference surface of the metal shell is improved, and a reliable reference surface is provided for subsequent capacitance displacement sensor calibration.
Therefore, the invention has the beneficial effects that: the through holes filled with the conductive material are introduced into the insulating substrate, and the conductive material is in contact with the conductive film with the standard Kerr-Fender-ring structure on the surface of the insulating substrate, so that the fringe electric field effect can be reduced while the communication between the standard Kerr-Fender-ring conductive film and an external lead is ensured; in addition, the part of the middle edge of one surface of the insulating substrate with the conductive film, which does not contain the conductive film, is directly contacted with the support of the reference surface of one end of the packaging metal shell, so that the installation parallelism between the insulating substrate with the conductive film and the reference surface of the metal shell is improved, a reliable reference surface is provided for the subsequent calibration of the capacitance displacement sensor, and the measurement precision of the capacitance displacement sensor is improved.
Drawings
FIG. 1 is a schematic diagram of a probe of a capacitive displacement sensor based on a conductive film according to the present invention.
Fig. 2 is a schematic diagram of a conductive film 1 with a standard kelvin ring structure on the surface of an insulating substrate 2 with through holes filled with a conductive material.
Fig. 3 is an electrode schematic diagram of a prior art kalman protection ring (Kelvin Guard Ring), in which fig. 3 (a) is an electrode cross-sectional schematic diagram of a kalman protection ring structure composed of a working electrode 1 and a protection ring, and fig. 3 (b) is an electrode longitudinal sectional schematic diagram of a kalman protection ring structure (in which the working electrode 2 is generally an object to be detected).
Fig. 4 is a schematic diagram of a non-standard kalman protection ring structure in the prior art.
In the figure, 1 is a conductive film, 11 is a circular conductive film, 12 is an annular conductive film, 2 is an insulating substrate, 21 is a first through hole, 22 is a second through hole, 211 is a first conductive material, 221 is a second conductive material, 3 is a metal housing, 31 is an annular support frame, 32 is an internal thread, 4 is a screwing device, 41 is an external thread, 42 is a through hole, and 5 is an annular gasket.
Detailed Description
The invention is further described below with reference to the drawings and detailed description.
Example 1
The embodiment 1 of the invention comprises the following specific processes:
the insulating substrate 2 is a circular alumina ceramic substrate, and the first through hole 21 and the second through hole 22 are filled with a conductive material which is a first conductive material 211 and a second conductive material 221, and palladium-silver composite conductive material; the conductive film 1 with the Kerr-Fender ring structure is made of a palladium-silver composite conductive material; the metal shell 3 is 304 stainless steel; the annular gasket 5 is polytetrafluoroethylene.
Example 2
The embodiment 2 of the invention comprises the following specific processes:
the insulating substrate 2 is a circular glass substrate, and the first through hole 21 and the second through hole 22 are filled with a first conductive material 211 and a second conductive material 221 which are copper; the conductive film 1 with the Kerr-Fender ring structure is platinum; the metal shell 3 is made of aluminum alloy; the annular gasket 5 is silicone rubber.
Example 3
The embodiment 3 of the invention comprises the following specific processes:
the insulating substrate 2 is a circular alumina-zirconia composite substrate, and the first through holes 21 and the second through holes 22 are filled with a first conductive material 211 and a second conductive material 221 which are platinum conductive materials; the conductive film 1 with the Kerr-Fender ring structure is gold; the metal shell 3 is made of aluminum alloy; the annular gasket 5 is copper.
Claims (6)
1. The utility model provides a capacitance displacement sensor probe based on conductive film, includes that the cylindrical insulating substrate (2) that has conductive film (1) is fixed in on annular support frame (31) of the one end of cylindrical metal casing (3), its characterized in that: the cylindrical insulating substrate (2) is provided with a first through hole (21) and a second through hole (22); the first through hole (21) is filled with a first conductive material (211), and the second through hole (22) is filled with a second conductive material (221); one end of the first conductive material (211) and one end of the second conductive material (221) are respectively located in the same plane with one surface of the insulating substrate (2);
the conductive film (1) consists of an insulating and separating circular conductive film (11) with a concentric complete surface and an annular conductive film (12) with a complete surface; the circular conductive film (11) is communicated with one end of the first conductive material (211); one end of the annular conductive film (12) is communicated with one end of the second conductive material (221), and the other end of the first conductive material (211) and the other end of the second conductive material (221) are used as pins;
the outer diameter of the annular conductive film (12) is smaller than the diameter of the cylindrical insulating substrate;
the cylindrical insulating substrate (2) is fixed on an annular supporting frame (31) of the cylindrical metal shell (3) through a screwing device (4) and an annular gasket (5); one surface of the insulating substrate (2) with the conductive film (1) is contacted with the annular supporting frame (31), and the contact part is not provided with the conductive film (1); the annular gasket (5) is positioned on the surface of the insulating substrate (2) without the conductive film; the precession device (4) is in direct contact with the annular gasket (5);
the screw-in device (4) is a cylinder, an external thread (41) is arranged on the outer side surface, and a through hole (42) for a lead wire is arranged in the middle of the cross section of the screw-in device;
the inner side surface of the cylindrical metal shell (3) is provided with an inner thread (32) matched with an outer thread (41) on the outer side surface of the screwing device (4); the inner diameter of an annular supporting frame (31) at one end of the cylindrical metal shell (3) is smaller than the diameter of the cylindrical insulating substrate (2) but larger than the outer diameter of the annular conductive film (12).
2. The conductive film based capacitive displacement sensor probe of claim 1, wherein: the insulating substrate (2) is made of glass, quartz, silicon with a silicon oxide layer or an insulating ceramic material, and the insulating ceramic material is any one of alumina, zirconia, silicon nitride or a composite species thereof.
3. The conductive film based capacitive displacement sensor probe of claim 1, wherein: the conductive component in the conductive film (1) is any one of platinum, gold, silver, copper, palladium, nickel, iron, aluminum, titanium, cobalt, tungsten, molybdenum, tantalum, graphite or a compound thereof.
4. The conductive film based capacitive displacement sensor probe of claim 1, wherein: the cylindrical metal shell (3) is made of stainless steel, copper alloy or aluminum alloy.
5. The conductive film based capacitive displacement sensor probe of claim 1, wherein: the precession device (4) is made of stainless steel, copper alloy or aluminum alloy.
6. The conductive film based capacitive displacement sensor probe of claim 1, wherein: the annular gasket (5) is made of polytetrafluoroethylene, insulating rubber or metal.
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| CN201910159511.0A CN109813206B (en) | 2019-03-04 | 2019-03-04 | Capacitive displacement sensor probe based on conductive film |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2126533C1 (en) * | 1997-11-26 | 1999-02-20 | Куликов Николай Дмитриевич | Capacitive type pressure and differential pressure pickup |
| CN201964871U (en) * | 2011-03-01 | 2011-09-07 | 欧阳祖熙 | Capacitive displacement sensor and component-type borehole strain meter adopting same |
| CN102607394A (en) * | 2012-03-26 | 2012-07-25 | 浙江大学 | MEMS (Micro-Electro-Mechanical Systems) processing technique-based cylindrical capacitive sensor |
| CN109357612A (en) * | 2018-11-21 | 2019-02-19 | 中国科学院合肥物质科学研究院 | One kind being used for static liquid level capacitance displacement sensor on-line calibration method |
| CN210004943U (en) * | 2019-03-04 | 2020-01-31 | 中国科学技术大学 | capacitance displacement sensor probe based on conductive film |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7347102B2 (en) * | 2005-08-10 | 2008-03-25 | Postech Foundation | Contact-type electric capacitive displacement sensor |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2126533C1 (en) * | 1997-11-26 | 1999-02-20 | Куликов Николай Дмитриевич | Capacitive type pressure and differential pressure pickup |
| CN201964871U (en) * | 2011-03-01 | 2011-09-07 | 欧阳祖熙 | Capacitive displacement sensor and component-type borehole strain meter adopting same |
| CN102607394A (en) * | 2012-03-26 | 2012-07-25 | 浙江大学 | MEMS (Micro-Electro-Mechanical Systems) processing technique-based cylindrical capacitive sensor |
| CN109357612A (en) * | 2018-11-21 | 2019-02-19 | 中国科学院合肥物质科学研究院 | One kind being used for static liquid level capacitance displacement sensor on-line calibration method |
| CN210004943U (en) * | 2019-03-04 | 2020-01-31 | 中国科学技术大学 | capacitance displacement sensor probe based on conductive film |
Non-Patent Citations (1)
| Title |
|---|
| 厚膜电容微位移传感器的非线性误差分析;张早春;马以武;高理升;;仪表技术与传感器(06);全文 * |
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