CN210004943U - capacitance displacement sensor probe based on conductive film - Google Patents
capacitance displacement sensor probe based on conductive film Download PDFInfo
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- CN210004943U CN210004943U CN201920268195.6U CN201920268195U CN210004943U CN 210004943 U CN210004943 U CN 210004943U CN 201920268195 U CN201920268195 U CN 201920268195U CN 210004943 U CN210004943 U CN 210004943U
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Abstract
The utility model discloses an capacitance displacement sensor probe based on conducting film, the cylindrical insulating substrate who has the conducting film and the through hole that is filled with conducting material is fixed in the annular of end of cylinder metal casing through precession device and sealing ring and is supported, the face that insulating substrate has the conducting film contacts with the support frame, the contact site does not have the conducting film, the sealing ring is located the face that insulating substrate does not have the conducting film, precession device and sealing ring contact, the conducting film has Kelvin guard ring structure, by insulating separation have concentric complete circular conducting film in surface and the complete annular conducting film in surface constitute, conducting material is located the through hole, end and circular conducting film intercommunication, end is as the pin in addition, the utility model discloses improve single electrode capacitance displacement sensor electric field homogeneity, improve the depth of parallelism of conducting film surface and support frame surface, improve single electrode capacitance displacement sensor installation accuracy to improve capacitance displacement sensor's measurement accuracy and reliability.
Description
Technical Field
The utility model relates to a capacitance displacement sensor probe field, concretely relates to capacitance displacement sensor probes based on the conducting film, especially capacitance displacement sensor probes based on standard Kelvin protection ring structure conducting film that the concentric complete circular conducting film in surface of insulation separation and the complete annular conducting film in surface constitute on the insulating substrate.
Background
The capacitance displacement sensor has the advantages of good dynamic characteristics, high resolution, simple structure and the like, is very suitable for high-precision and non-contact dynamic measurement, has been widely used for high-precision measurement in the fields of displacement, pressure and the like by , and in the capacitance displacement sensor, the relationship between the capacitance (C) and the distance (d) between the electrodes can be expressed as follows:
C＝εrε0A/d (1)
wherein epsilonrIs the relative dielectric constant of the medium between the electrodes, epsilon0The dielectric constant is vacuum, A is the coverage area between the plates, and d is the plate spacing. The capacitance of the capacitance sensor is changed due to the change of the distance between the polar plates, so that the measurement of displacement, pressure and the like is realized. The condition for the above equation (1) is that the electric field between the plates of the capacitance displacement sensor is uniformly distributed. Because of the edge electric field introduced in the manufacturing and installation processes and the non-parallel error between the polar plates, the electric field distribution between the two polar plates of the capacitance displacement sensor is not parallel, and the signal of the capacitance displacement sensor is distorted along with the space change. In order to minimize the electric field edge effect and improve the uniformity of electric field distributionThe document is used as a volume sensor probe [1 ]]Journal Applied Physics1975，46， 2486-2490[W.C.Heerens,F.C.Vermeulen,Capacitance of kelvin guard-ringcapacitors with modified edge geometry,J.Appl.Phys.46(1975)2486-2490]The electrode of Kelvin Guard Ring (Kelvin Guard Ring) structure reported in (1) (see FIG. 3(a)) is composed of the working electrode 1 and the Guard Ring, the working electrode 2 is the detected object in FIG. 3(b), and the working area is much larger than that of the working electrode 1. in the operation process, the working electrode 1 and the Guard Ring potential are kept , so that the electric field edge effect is greatly reduced.
In addition, the greater the capacitive sensor plate thickness, the greater the electric field fringe effect. In order to reduce the thickness of the electrode plate, a thin conductive film of a kelvin guard ring structure on an insulating substrate is used as an electrode instead of a thicker metal plate of the kelvin ring structure, so that the electric field edge effect is reduced. However, when the conductive film with the Kelvin ring structure is used, in order to connect the lead to the guard ring middle working electrode, the conductive film often uses a nonstandard Kelvin guard ring structure (see FIG. 4) reported in the literature [3] Nature Nanotechnology 2011,6,496-500, which may introduce an additional electric field fringe effect and damage the performance of the capacitance displacement sensor.
For the angle of inclination between the two rectangular polar plates isDocument (2) Electronics2008, Sozopol, Bulgaria,15-20 gives an approximate quantitative relationship between capacitance (C) and distance (d) between the electrodes, as shown in equation (2) below:
wherein a is the width of the rectangular polar plate; l is the length of the rectangular polar plate;the inclination angle between the two polar plates is included; d is the distance between the center points of the two polar plates. As can be seen from equations (1) and (2), only non-planarity of the plates is considered, the method is to increase the parallelism between two plates and decrease the inclination angle between plates to ignore the non-parallelism error, the second method is to obtain the inclination angle between two plates in the capacitance displacement sensor and calibrate by equation (2), however, no matter whether to increase the parallelism between two plates or obtain the inclination angle between two plates, reference planes must be given to the capacitance displacement sensor probe to calibrate and increase the measurement accuracy.
SUMMERY OF THE UTILITY MODEL
The utility model aims at avoiding the capacitance displacement sensor probe to have the problem of larger electric field edge effect when the conducting film of the nonstandard Kelvin protection structure on the insulating substrate is taken as the electrode, adopting the insulating substrate with the through hole, filling the conducting material in the hole, ensuring that the end of the conducting material and the surface of the insulating substrate are in the same plane and simultaneously connecting the conducting film, thereby endowing the conducting film with the standard Kelvin protection structure and reducing the electric field edge effect, in addition, the part without the conducting film in the surface with the conducting film through the insulating substrate is in direct contact with the support of the packaging metal shell end as the reference surface, improving the installation parallelism between the insulating substrate with the conducting film and the metal shell reference surface, thereby providing high-precision capacitance displacement sensor probe.
The technical scheme of the utility model is that capacitance displacement sensor probes based on conductive films comprise a cylindrical insulating substrate 2 with a conductive film 1 fixed on an annular support frame 31 at the end of a cylindrical metal shell 3, wherein the cylindrical insulating substrate 2 is provided with a through hole 21 and a second through hole 22, a conductive material 211 is filled in the through hole 21, a second conductive material 221 is filled in the second through hole 22, and the end of the conductive material 211 and the end of the second conductive material 221 are respectively positioned in the same plane with the surface of the cylindrical insulating substrate 2;
the conductive film 1 consists of a circular conductive film 11 with a complete surface and a circular conductive film 12 with a complete surface, which are insulated and separated, wherein the circular conductive film 11 is communicated with a end of a conductive material 211, the circular conductive film 12 is communicated with a end of a second conductive material 221, and the other end of the conductive material 211 and the other end of the second conductive material 221 are both used as pins;
the outer diameter of the annular conductive film 12 is smaller than the diameter of the cylindrical insulating substrate;
the cylindrical insulating substrate 2 is fixed on the annular support frame 31 of the cylindrical metal shell 3 through a precession device 4 and an annular gasket 5, the surface of the insulating substrate 2 with the conducting film 1 is in contact with the annular support frame 31, the contact part is not provided with the conducting film 1, the annular gasket 5 is positioned on the surface of the cylindrical insulating substrate 2 without the conducting film, and the precession device 4 is in direct contact with the annular gasket 5.
The screw-in device 4 is a cylinder, the outer surface of the screw-in device is provided with external threads 41, and the middle of the cross section of the screw-in device is provided with through holes 42 for leading wires.
The inner side surface of the cylindrical metal shell 3 is provided with internal threads 32 matched with external threads 41 on the outer side surface of the screw-in device 4, and the inner diameter of the annular support frame 31 at the end of the cylindrical metal shell 3 is smaller than the diameter of the cylindrical insulating substrate 2 and larger than the outer diameter of the annular conductive film 12.
The cylindrical metal shell 3 is made of stainless steel, copper alloy or aluminum alloy.
The precession device 4 is made of stainless steel, copper alloy or aluminum alloy.
The annular gasket 5 is made of polytetrafluoroethylene, insulating rubber or metal, types of capacitance displacement sensor probes based on the conductive film comprise the conductive film forming a complete Kelvin protection ring structure on a cylindrical insulating substrate, and the conductive film of the Kelvin protection ring structure is obtained by physical vapor deposition or a screen printing process;
particularly, the cylindrical insulating substrate is provided with two through holes which are filled with conductive materials, the end of the conductive materials and the surface of the cylindrical insulating substrate are in the same plane, and the other end of the conductive materials is used as a lead pin;
filling the conductive material in the through hole of the cylindrical insulating substrate by adopting a filling or electroplating method;
the outer annular conductive film of the conductive film with the complete Kerofen ring structure is communicated with the surface of the conductive material in the through holes and the end of the cylindrical insulating substrate on the same plane as , and the inner circular conductive film is communicated with the end of the conductive material in the other through holes and the surface of the cylindrical insulating substrate on the same plane as ;
the surface of the cylindrical insulating substrate with the complete Kerofen ring structure conductive film is in supporting contact with the end of a cylindrical shielding metal shell , and the contact part is not provided with the conductive film;
the diameter of the cylindrical insulating substrate is smaller than the outer diameter of the cylindrical shielding metal shell but larger than the inner diameter of the support;
the outer diameter of the annular gasket is smaller than the inner diameter of the cylindrical shielding shell;
the outer side surface of the cylindrical metal precession transposition is provided with threads and is in threaded fit with the inner side surface of the cylindrical shielding metal shell;
a through hole for a lead is formed in the center of the cylindrical metal precession device;
the cylindrical insulating substrate is made of any (insulating ceramics) of glass, quartz, silicon with a silicon oxide layer, insulating ceramic materials of alumina, zirconia, silicon nitride or composite species thereof;
the conductive component in the conductive film with the complete Kelvin structure is kinds of platinum, gold, silver, copper, palladium, nickel, iron, aluminum, titanium, cobalt, tungsten, molybdenum, tantalum, graphite or any compound thereof [ kinds of metal, graphite or any compound thereof ].
The cylindrical metal precession device is made of stainless steel, copper alloy or aluminum alloy;
the cylindrical metal shielding shell is made of stainless steel, copper alloy or aluminum alloy;
the annular gasket is made of polytetrafluoroethylene, various insulating rubbers or metals.
However, compared with the thin conductive film electrode on the insulating substrate, the thin conductive film on the insulating substrate is used for replacing the thicker cylindrical metal electrode so as to further reduce the electric field edge effect.
The utility model has the advantages that:
compared with the prior art, the utility model discloses in, introduce two through holes on the insulating substrate to fill conducting material, conducting material's in two through holes end respectively with have in the conducting film of standard Kelvin ring structure inside circular conducting film and outside annular conducting film intercommunication, conducting material's in two through holes end in addition as the lead wire pin of the conducting film of standard Kelvin protective ring structure, finally as capacitance displacement sensor probe electrode, in addition, when fixed mounting capacitance displacement sensor probe electrode, with the part that the edge does not contain the conducting film in the face that insulating substrate has the conducting film and encapsulation metal casing end support direct contact as the reference surface, improve the installation depth of parallelism between insulating substrate with the conducting film and the metal casing reference surface, provide reliable reference surfaces for follow-up capacitance displacement sensor calibration.
Therefore, the utility model has the advantages that the through hole for filling the conductive material is introduced into the insulating substrate, and the conductive material is in good condition with the insulating substrate surface and has the contact of the standard Kelvin ring structure conductive film, which can reduce the fringe electric field effect while ensuring the communication of the standard Kelvin ring conductive film and the external lead, in addition, the part of surfaces with the conductive film of the insulating substrate, which does not contain the conductive film at the edge, is in direct contact with the support of the end of the packaging metal shell as the reference surface, the installation parallelism between the insulating substrate with the conductive film and the metal shell reference surface is improved, reliable reference surfaces are provided for the subsequent calibration of the capacitance displacement sensor, and the measurement accuracy of the capacitance displacement sensor is improved.
Drawings
Fig. 1 is the utility model discloses based on conductive film capacitance displacement sensor probe schematic diagram.
Fig. 2 is a schematic view of a conductive film 1 with a standard kelvin ring structure on the surface of an insulating substrate 2 with a through hole filled with a conductive material.
Fig. 3 is an electrode schematic diagram of a Kelvin Guard Ring (Kelvin Guard Ring) structure in the related art, in which fig. 3(a) is an electrode cross-sectional schematic diagram of a Kelvin Guard Ring structure composed of a working electrode 1 and Guard rings, and fig. 3(b) is an electrode longitudinal-sectional schematic diagram of the Kelvin Guard Ring structure (in which the working electrode 2 is a detected object in general).
Fig. 4 is a diagram of a non-standard kelvin guard ring structure in the prior art.
In the drawing, 1 is a conductive film, 11 is a circular conductive film, 12 is a ring-shaped conductive film, 2 is an insulating substrate, 21 is an th through hole, 22 is a second through hole, 211 is a th conductive material, 221 is a second conductive material, 3 is a metal case, 31 is a ring support, 32 is an internal thread, 4 is a precession device, 41 is an external thread, 42 is a through hole, and 5 is a ring-shaped spacer.
Detailed Description
The present invention will be further described in with reference to the following drawings and detailed description.
Example 1
The embodiment 1 of the utility model discloses the concrete process does:
the insulating substrate 2 is a circular alumina ceramic substrate, conductive materials , such as a palladium-silver composite conductive material, are filled in the th through hole 21 and the second through hole 22, the conductive materials are th conductive materials 211 and second conductive materials 221, the Kelvin ring structure conductive film 1 is a palladium-silver composite conductive material, the metal shell 3 is 304 stainless steel, and the annular gasket 5 is polytetrafluoroethylene.
Example 2
The utility model discloses embodiment 2 concrete process does:
the insulating substrate 2 is a circular glass substrate, the th through hole 21 and the 22 second through hole are filled with the th conductive material 211 and the second conductive material 221 which are copper, the Kelvin ring structure conductive film 1 is platinum, the metal shell 3 is aluminum alloy, and the annular gasket 5 is silicon rubber.
Example 3
The embodiment 3 of the utility model provides a concrete process does:
the insulating substrate 2 is a circular alumina-zirconia composite substrate, the th through hole 21 and the second through hole 22 are filled with the th conductive material 211 and the second conductive material 221 which are platinum conductive materials, the Kelvin ring structure conductive film 1 is gold, the metal shell 3 is aluminum alloy, and the ring-shaped gasket 5 is copper.
Claims (6)
- The capacitive displacement sensor probe based on the conductive film comprises a cylindrical insulating substrate (2) with the conductive film (1), and an annular support frame (31) fixed at the end of a cylindrical metal shell (3), and is characterized in that the cylindrical insulating substrate (2) is provided with a th through hole (21) and a second through hole (22), an th conductive material (211) is filled in the th through hole (21), a second conductive material (221) is filled in the second through hole (22), and the end of the th conductive material (211) and the end of the second conductive material (221) are respectively positioned in the same plane with the surface of the cylindrical insulating substrate (2);the conductive film (1) consists of a circular conductive film (11) which is insulated and separated and has concentric and complete surface and a ring-shaped conductive film (12) which has complete surface, wherein the circular conductive film (11) is communicated with the end of the th conductive material (211), the ring-shaped conductive film (12) is communicated with the end of the second conductive material (221), and the other end of the th conductive material (211) and the other end of the second conductive material (221) are used as pins;the outer diameter of the annular conductive film (12) is smaller than the diameter of the cylindrical insulating substrate;the cylindrical insulating substrate (2) is fixed on an annular support frame (31) of a cylindrical metal shell (3) through a precession device (4) and an annular gasket (5), the surface of the insulating substrate (2) with the conductive film (1) is in contact with the annular support frame (31), the contact part is not provided with the conductive film (1), the annular gasket (5) is positioned on the surface of the cylindrical insulating substrate (2) without the conductive film, and the precession device (4) is in direct contact with the annular gasket (5).
- 2. The probe head of a capacitance displacement sensor based on a conductive film as claimed in claim 1, wherein the screw-in device (4) is a cylinder, the outer surface of the screw-in device is provided with external threads (41), and the middle of the cross section of the screw-in device is provided with through holes (42) for leads.
- 3. The probe of a capacitance displacement sensor based on a conductive film as claimed in claim 1, wherein the inner side surface of the cylindrical metal housing (3) has an internal thread (32) matching with the external thread (41) on the outer side surface of the precession means (4), and the inner diameter of the ring-shaped support frame (31) at the end of the cylindrical metal housing (3) is smaller than the diameter of the cylindrical insulating substrate (2) but larger than the outer diameter of the ring-shaped conductive film (12).
- 4. The conductive film-based capacitive displacement sensor probe of claim 1, wherein: the cylindrical metal shell (3) is made of stainless steel, copper alloy or aluminum alloy.
- 5. The conductive film-based capacitive displacement sensor probe of claim 1, wherein: the precession device (4) is made of stainless steel, copper alloy or aluminum alloy.
- 6. The conductive film-based capacitive displacement sensor probe of claim 1, wherein: the annular gasket (5) is made of polytetrafluoroethylene, insulating rubber or metal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920268195.6U CN210004943U (en) | 2019-03-04 | 2019-03-04 | capacitance displacement sensor probe based on conductive film |
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| CN201920268195.6U CN210004943U (en) | 2019-03-04 | 2019-03-04 | capacitance displacement sensor probe based on conductive film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813206A (en) * | 2019-03-04 | 2019-05-28 | 中国科学技术大学 | A kind of capacitance displacement sensor probe based on conductive film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109813206A (en) * | 2019-03-04 | 2019-05-28 | 中国科学技术大学 | A kind of capacitance displacement sensor probe based on conductive film |
| CN109813206B (en) * | 2019-03-04 | 2024-04-16 | 中国科学技术大学 | Capacitive displacement sensor probe based on conductive film |
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Address after: No.443 Huangshan Road, Shushan District, Hefei City, Anhui Province 230022 Patentee after: University of Science and Technology of China Address before: 230026 Jinzhai Road, Baohe District, Hefei, Anhui Province, No. 96 Patentee before: University of Science and Technology of China |