CN109811314A - A kind of visible light high-selenium corn far infrared high reflection film and preparation method thereof - Google Patents
A kind of visible light high-selenium corn far infrared high reflection film and preparation method thereof Download PDFInfo
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- CN109811314A CN109811314A CN201910188247.3A CN201910188247A CN109811314A CN 109811314 A CN109811314 A CN 109811314A CN 201910188247 A CN201910188247 A CN 201910188247A CN 109811314 A CN109811314 A CN 109811314A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 title claims abstract description 10
- 235000002017 Zea mays subsp mays Nutrition 0.000 title claims abstract description 10
- 235000005822 corn Nutrition 0.000 title claims abstract description 10
- 239000011669 selenium Substances 0.000 title claims abstract description 10
- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 10
- 240000008042 Zea mays Species 0.000 title description 6
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- 239000004411 aluminium Substances 0.000 claims abstract description 11
- 241000209149 Zea Species 0.000 claims abstract 4
- 239000010410 layer Substances 0.000 claims description 77
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 8
- 239000002356 single layer Substances 0.000 claims description 7
- 239000011807 nanoball Substances 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000000155 melt Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 239000002077 nanosphere Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 39
- 238000010521 absorption reaction Methods 0.000 abstract description 10
- 238000002310 reflectometry Methods 0.000 abstract description 8
- 230000008878 coupling Effects 0.000 abstract description 5
- 238000010168 coupling process Methods 0.000 abstract description 5
- 238000005859 coupling reaction Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 238000004088 simulation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 239000000049 pigment Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 238000000862 absorption spectrum Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- 239000008187 granular material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000002078 nanoshell Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Abstract
The invention belongs to nano novel Material Fields, and in particular to a kind of visible light high-selenium corn far infrared high reflection film.Dielectric layer and metal nano-particle layer is added in the present invention on the basis of metallic aluminium；It is contacted by using metal nano island with dielectric layer, the coupling of implementation pattern, generates phasmon and vibrate chamber；It can be by adjusting the thickness of dielectric layer and the size of metal nanoparticle, the characteristic of Lai Shixian film antiradar reflectivity, high-absorbility in visible wavelength range will not influence infrared stealth characteristic while reducing film surface lightness.This film can reach 18.66%-59.04% in visible-range internal absorption factor, be no more than 1.40%-1.42% in far infrared range internal absorption factor.Preparation method of the invention is relatively easy, and the visible light high-selenium corn far infrared high reflection thin film parameter prepared is had excellent performance.
Description
Technical field
The invention belongs to nano novel Material Fields, and in particular to a kind of visible light high-selenium corn far infrared high reflection film,
There is antiradar reflectivity, high-absorbility in visible light wave range, there is the film of high reflectance, low absorptivity in far infrared band.
Background technique
Has the coating of high reflectance, low absorptivity in the application of the fields such as building, stealthy, space flight, military affairs in infrared band
Widely.This coating is mainly made of low-launch-rate coating, generally using high reflectances, low absorption such as aluminium, titanium, copper, silver
The metal-powder of rate.Metallic aluminium has the good characteristics such as corrosion-resistant, reflecting properties are good, light weight and cost is low, is most common
Low-emittance pigment.But it equally has the performance of high reflectance, low absorptivity in visible light wave range, leads to coating surface excessively
It is bright.It is pigment coated to can change coating surface color, reduce lightness, but the characteristics such as its shape, size, distribution consistency degree are to low
Emission coating has a significant impact, and most of coloring pigments can be in the emissivity of infrared band increase coating.
For example, preparing MnO on aluminum slice surface by pyrolysis method2Film changes its shape by heat flow method, makes
It becomes nanoshell, and composite pigment is prepared, and the coating that this method is prepared has dependence of angle, it is bright can to reduce surface
Degree, but with the increase of visible-range internal absorption factor, far infrared reflectivity is reduced to 20% hereinafter, optimum efficiency is visible light
Range internal absorption factor is 60%, and far infrared range internal reflection rate is 50%.It can be used to prepare using solvent-thermal method dark magnetic multiple
Pigment is closed, there is control surface topography, prevent the advantages such as aluminium flake oxidation, sphere pigments form dense granule layer in aluminum flake surface,
Inhibit surface brightness, absorptivity reaches 67%, but its far infrared reflectivity drops to 32%, and operating procedure is complex.This
Generally all operating procedure is lengthy and tedious or coating is uneven for a little methods modified using coloring pigment progress surface, is unfavorable for coating
Stability, and can make a big impact to the reflectivity of far infrared band.
It is to reduce metal surface in visible light wave range to reflect using the nano composite structure that surface plasmon mode designs
The effective ways of rate.Surface phasmon refers to the freedom when light beam is incident in the interface of metal and medium, in metal
Electronics vibrates, if the frequency of oscillation of electronics is equal with optical signal frequency, at the interface of metal and medium, it may occur that
The enhancing of electromagnetic field.The influence factor of this mode resonance peak position includes metal dimension, metal material and thickness of dielectric layers etc..Table
Face phasmon has unique optical characteristics, is widely used in various optical thin-film structures.Surface phasmon includes
Surface plasmon-polarition resonance and local surface plasmon resonance.When thickness of dielectric layers is lower, surface plasmon-polarition
Resonance mode can generate cavity modes with local surface plasmon resonance Mode Coupling.The resonance absorbing peak that this mode generates
The absorptivity of visible light wave range can be increased, and very little is influenced on the reflectivity of far infrared band.
Chemically synthesized silver nanocubes or gold nano cube are covered on gold by the method for generalling use liquid deposition
Film and polymer spacer layer surface, while cube face also wraps up one layer of polymeric, what the ammeter surface current in film generated
The wave that back wave and magnetic surface electric current generate is cancelled out each other, to absorb, by changing cube size, control polymer
Space layer and surface coverage can adjust resonant positions in 650nm-1420nm, realize the absorption of almost Perfect, inhale
Yield is 60%-99.7%, but nanocube preparation and polymer solution deposition it is complex.The preparation method of gold goal is non-
It is often mature, but gold goal is directly deposited on interval layer surface, it can not achieve the coupling of mode, generate phasmon and vibrate chamber.
Summary of the invention
For above-mentioned there are problem or deficiency, for complicated, the surface mistake that solves existing low infrared emissivity preparation technology of coating
In bright defect, and the characteristic of far infrared band high reflection is not influenced, the present invention provides a kind of visible light high-selenium corn is far red
Outer high reflection film, using surface plasmon mode, by adjust surface plasmon-polarition resonance and local surface etc. from
Degree of coupling between plasmon resonance, absorptivity of the Lai Tigao film in visible wavelength range.
A kind of visible light high-selenium corn far infrared high reflection film, the structure be periodic unit structure, successively include basal layer,
Dielectric layer and single-layer metal nano-particle layer.
The basal layer includes substrate and the aluminium film for being set to its surface, and aluminium film is with a thickness of 50-100nm；Dielectric layer is folding
Penetrate the dielectric substance of rate 1.4-1.5, thickness 5-9nm；The metal nanoparticle of single-layer metal nano-particle layer is partial size 5-
The metal nano ball of 50nm melts resulting metal nano island, and the fusing point of metal nanoparticle is lower than dielectric layer fusing point.
The periodic unit is single hemisphere metal nanoparticle and its corresponding basal layer and dielectric layer, adjacent hemisphere
The spacing of body metal nanoparticle is 30-100nm.
Preparation method are as follows:
Step 1 prepares one layer of Al film on substrate, with a thickness of 50-100nm, as basal layer.
Step 2, step 1 prepare basal layer Al film on, prepare one layer of 5-9nm refractive index be 1.4-1.5 electricity
Dielectric material, as dielectric layer.
In step 3, the dielectric layer made from step 2, the single-layer metal nanosphere of partial size 5-50nm, the metal nano are prepared
The fusing point of particle is lower than dielectric layer fusing point.
Step 4, heating melts metal nano ball under vacuum, as metal nano-particle layer.
Dielectric layer and metal nano-particle layer is added in the present invention on the basis of metallic aluminium, and the fusing point of metal nanoparticle is low
In dielectric layer fusing point；It is contacted by using hemisphere metal nanoparticle with dielectric layer, the coupling of implementation pattern, generation etc. is from sharp
Member oscillation chamber；It can be by adjusting the thickness of dielectric layer and the size of metal nanoparticle, Lai Shixian film is in visible wavelength model
The characteristic of interior antiradar reflectivity, high-absorbility is enclosed, will not influence infrared stealth characteristic while reducing film surface lightness.This film
It can reach 18.66%-59.04% in visible-range internal absorption factor, be no more than 1.40%- in far infrared range internal absorption factor
1.42%.
In conclusion preparation method of the invention is relatively easy, and the visible light high-selenium corn far infrared high reflection prepared is thin
Film parameters are had excellent performance.
Detailed description of the invention
Fig. 1 is the periodic unit top view of embodiment；
Fig. 2 is the simulation architecture schematic diagram of periodic unit of the present invention；
Fig. 3 be with embodiment same substrate layer, the periodic unit of no dielectric layer and metal nano-particle layer is in visible light wave
The absorptivity simulation result of long range；
Fig. 4 be and embodiment same substrate layer, the film of no dielectric layer and metal nano-particle layer, in far infrared wavelength model
The absorptivity simulation result enclosed；
Fig. 5 is embodiment thickness of dielectric layers when being 5nm, changes metal nanoparticle dimensional parameters, the film is in visible light
The absorptivity simulation result of wave-length coverage；
Fig. 6 be embodiment metal nanoparticle having a size of 5nm when, change thickness of dielectric layers parameter, the film is in visible light
The absorptivity simulation result of wave-length coverage；
Fig. 7 be embodiment metal nanoparticle having a size of 10nm when, change thickness of dielectric layers parameter, the film is in visible light
The absorptivity simulation result of wave-length coverage；
Fig. 8 be embodiment metal nanoparticle having a size of 15nm when, change thickness of dielectric layers parameter, the film is in visible light
The absorptivity simulation result of wave-length coverage；
Fig. 9 be embodiment metal nanoparticle having a size of 25nm when, change thickness of dielectric layers parameter, the film is in visible light
The absorptivity simulation result of wave-length coverage；
Figure 10 is embodiment thickness of dielectric layers when being 5nm, changes metal nanoparticle dimensional parameters, the film is in far infrared
The absorptivity simulation result of wave-length coverage.
Specific embodiment
With reference to the accompanying drawings and examples, technical solution of the present invention is described in detail.
The simulation architecture schematic diagram of periodic unit of the present invention is as shown in Figure 2；Basal layer is SiO2/ Si substrate and aluminium film,
Middle SiO2With a thickness of 300nm, aluminium film is the half of radius 5-25nm with a thickness of 50nm, thickness of dielectric layers 5-9nm, metal nano island
Sphere, aluminium film and SiO2The SiO of/Si substrate2One side contacts.
Preparation method are as follows:
Step 1, deposited by electron beam evaporation device are in SiO2The Al film that one layer of 50nm is evaporated in/Si substrate, as basal layer.
Step 2, with magnetic control sputtering device on Al film one layer of SiO of radio-frequency sputtering2Film, sputtering time be respectively 5min,
7min, 9min, sputtering power 80W, corresponding SiO2Film is 5nm, 7nm and 9nm as dielectric layer.
Step 3 chemically prepares gold nano grain, forms single layer in dielectric layer upper surface by the method for self assembly
Gold nano grain.
Step 4, in vacuum environment, at 500 DEG C heating melt gold nano grain, formed the hemispheroidal gold nano of class
Island, as metal nano-particle layer.
Following data are obtained using advanced numerical simulation software COMSOL:
When do not have be added surface plasmon mode when, i.e., only basal layer when, the film is in visible wavelength range
Absorption spectrum as shown in figure 3, with wavelength increase, absorption take the lead in increase after reduce, have a formant, resonant positions
For 820nm, which is 18.66%；Absorption spectrum of the film in far infrared wave-length coverage is as shown in figure 4, with wave
Long increase, absorptivity are gradually reduced, and absorptivity is up to 1.41%.
Above-mentioned SiO is added in the film2Dielectric layer and metal nano-particle layer.The thickness of dielectric layer be respectively 5nm, 7nm,
The material of 9nm, metal nanoparticle are gold, and radius is respectively 5nm, 10nm, 15nm, 25nm.Surface plasmon-polarition resonance
It couples to form cavity modes with local surface plasmon resonance, ring is generated between metal nano-particle layer and metallic substrate layer
Shape electric current generates electric field local between metal nano-particle layer and dielectric layer, meanwhile, magnetic field enhances in dielectric layer.The film
Absorption spectrum in visible wavelength range as shown in figure 5, generate a new formant, position in 590-680nm or so,
With the increase of metal particle size, absorptivity is essentially increase trend at the resonant positions, when hemispheroidal metal nano
When island radius is respectively 5nm, 10nm, 15nm, 20nm, 25nm, resonant positions be respectively 590nm, 590nm, 620nm,
650nm, 680nm, absorptivity are respectively 11.64%, 17.01%, 38.42%, 36.38%, 59.04%.
As shown in Fig. 7,8,9, with the increase of thickness of dielectric layers, absorptivity is basically unchanged, the position blue shift at the peak P1, is met
The requirement of cavity modes illustrates to can control the position of P1 absorption peak by the thickness for adjusting dielectric layer.The film is in far infrared
Absorption spectrum in wave-length coverage is as shown in Figure 10, and when metal particle size is respectively 5nm, 10nm, 15nm, absorptivity increases
Amplitude very little, absorptivity highest are respectively 1.41%, 1.41%, 1.41%.
To sum up, for the present invention while guaranteeing high reflectance, low-launch-rate in far infrared wave-length coverage, realizing can
Antiradar reflectivity, high-absorbility in light-exposed wave-length coverage, and preparation method is more simple and easy to do.
Claims (2)
1. a kind of visible light high-selenium corn far infrared high reflection film, it is characterised in that: the structure is periodic unit structure, is successively wrapped
Include basal layer, dielectric layer and single-layer metal nano-particle layer；
The basal layer includes substrate and the aluminium film for being set to its surface, and aluminium film is with a thickness of 50-100nm；Dielectric layer is refractive index
1.4-1.5 dielectric substance, thickness 5-9nm；The metal nanoparticle of single-layer metal nano-particle layer is partial size 5-50nm's
Metal nano ball melts resulting metal nano island, and the fusing point of metal nanoparticle is lower than dielectric layer fusing point；
The periodic unit is single hemisphere metal nanoparticle and its corresponding basal layer and dielectric layer, adjacent hemisphere gold
The spacing of metal nano-particle is 30-100nm.
2. visible light high-selenium corn far infrared high reflection film as described in claim 1, preparation method are as follows:
Step 1 prepares one layer of Al film on substrate, with a thickness of 50-100nm, as basal layer；
Step 2, step 1 prepare basal layer Al film on, prepare one layer of 5-9nm refractive index be 1.4-1.5 dielectric
Material, as dielectric layer；
In step 3, the dielectric layer made from step 2, the single-layer metal nanosphere of partial size 5-50nm, the metal nanoparticle are prepared
Fusing point be lower than dielectric layer fusing point；
Step 4, heating makes metal nano ball be molten into metal nano island under vacuum, as metal nano-particle layer.
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| CN112230321A (en) * | 2020-10-22 | 2021-01-15 | 中国人民解放军国防科技大学 | High-temperature-resistant spectrally selective infrared stealth coating and preparation method thereof |
| CN112326025A (en) * | 2021-01-05 | 2021-02-05 | 武汉敏芯半导体股份有限公司 | Photoelectric detector based on curved surface structure super surface |
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