CN106033829A - Plasmon narrowband absorption film - Google Patents
Plasmon narrowband absorption film Download PDFInfo
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- CN106033829A CN106033829A CN201510106462.6A CN201510106462A CN106033829A CN 106033829 A CN106033829 A CN 106033829A CN 201510106462 A CN201510106462 A CN 201510106462A CN 106033829 A CN106033829 A CN 106033829A
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Abstract
The invention provides a plasmon narrowband absorption film comprising a substrate layer, a dielectric layer arranged on the surface of the substrate layer, an isolation layer arranged on the surface of the dielectric layer, and a dielectric particle layer arranged on the surface of the isolation layer. The dielectric particle layer is formed by a plurality of dielectric particles arranged according to a certain period. The film has the following advantages: firstly, compared with plasmon resonance of free electrons in metal particles, the film enables the thermal loss to be reduced substantially; secondly, electromagnetic resonance narrow-wavelength light absorption in a strong local area is realized and thus the action strength of the electromagnetic wave and the dielectric particles can be enhanced further, so that narrow-wavelength resonance response in a strong local area can be realized in a non-conformity environment; and thirdly, the absorption proportion of the electromagnetic energy in the dielectric layer and the dielectric particles can be adjusted, thereby reducing the metallic thermal losses.
Description
Technical field
The present invention relates to two dimensional surface photonic crystal field, particularly relate to a kind of phasmon narrow-band absorption thin
Film.
Background technology
Metallic particles produces collective's concussion of surface electronic under the excitation coupling of electromagnetic wave and is demonstrated by unusual
Optical characteristics, the most so-called local plasmon resonance characteristic.The resonance of this light and electronics can be by
Light constrains in the scope that surface of metal particles tens nanometer is the least, and forms the strongest local electromagnetism
, optics local and light field that the local phasmon of metallic particles is superpower strengthen characteristic and make it at bio-sensing
Device, surface enhanced raman spectroscopy and Fluorescence Increasing spectrum etc. technically present huge application prospect.
On the other hand, when metallic particles forms cyclic array, excite under electromagnetic wavelength certain,
The grain diffraction pattern of periodic array and the local plasmon resonance of individual particle interact, and demonstrate
A kind of novel narrowband optical oscillation mode.Under the collective resonance of this array couples, the local of individual particle
The resonance energy of phasmon can greatly reduce to the radiation of free space, and the energy of more electromagnetic wave will
Being strapped in metallic particles array, the quality factor of the oscillation mode of respective cavities is improved.This exception
Metal nanoparticle array there is the local electromagentic resonance of light amplification, the light of the narrowest wavelength can be produced simultaneously
There is potential using value in the fields such as absorb response, therefore at nano laser, sensor, detector.
Teri W.Odom of Northwestern Univ USA et al. (2013, Nature Nanotechnology) utilizes metal
The resonant cavity pattern of grain periods array, in conjunction with IR dyes fluorescence molecule gain material, it is achieved room temperature etc.
Infrared photic lasing is coupled luminous from excimer.Associated period metallic particles array phasmon coupled resonance should
The most concerned with research, but its application prospect is also limited.First metallic particles array needs one
Individual uniform media environment could realize diffraction coupled resonance.In different substrate surfaces, this periodicity
The diffraction coupling that metal structure causes will weaken, and more electromagnetic wave leakage so cannot be stoped to certainly
By in space.Secondly, the local Electromagnetic enhancement that in metallic particles, free electron phasmon coupled resonance produces
Field, generally along with bigger electromagnetic energy absorption, can produce the loss of substantial amounts of metal fever, cause the metal cycle
Array is mainly converted to the thermal losses of metal to the hypersorption of electromagnetic energy.The most not only can make metal structure week
The temperature enclosed raises, and the utilization rate of electromagnetic wave energy can be made to reduce.
Summary of the invention
For overcoming problems of the prior art, the present invention provides a kind of phasmon narrow-band absorption thin film,
It has low heat loss, can realize the narrow section of advantage absorbed in uneven environment.
In order to solve the problems referred to above, the invention provides a kind of phasmon narrow-band absorption thin film, including substrate
Layer and be arranged at the dielectric layer of described substrate surface, also includes the sealing coat being arranged on described dielectric layer surface
And be arranged on the dielectric grain layer of described insulation surface, described dielectric grain layer by multiple dielectric grains by one
Fixed cycle arrangement is formed.
Further, described dielectric grain forms dielectric grain layer according to a parallelogram array arrangement.
Further, the angle theta on the both sides of described parallelogram array is in the range of 0 ° of ＜ θ≤90 °
Further, the most adjacent distance between two dielectric grains is equal, and the cycle of described dielectric grain is
The adjacent distance between two dielectric grains and the diameter sum of dielectric grain.
Further, described phasmon narrow-band absorption thin film, by the exciting of electromagnetic wave of certain wavelength, is given an account of
The cycle of electricity granule is 0.05-1 with the ratio range of the wavelength of described electromagnetic wave.
Further, described phasmon narrow-band absorption thin film, by the exciting of electromagnetic wave of certain wavelength, is given an account of
Electricity granule the ratio range of wavelength of size and described electromagnetic wave be 0.05-1.
Further, the refractive index of described dielectric grain layer is more than the refractive index of described sealing coat.
Further, the refractive index of described dielectric grain layer and the ratio of the refractive index of described sealing coat are more than 1.4.
Further, the one during the material of described dielectric grain is inorganic material or organic material.
Further, the material of described dielectric layer is Graphene or metal.
It is an advantage of the current invention that:
1, high refractive index dielectric granule can interact with incident electromagnetic field and produce the electromagnetic coupled of resonance
Pattern, producing of this resonant mode is resonated based on the bound electron electromagnetic coupled in dielectric grain, compared to gold
The plasmon resonance of the free electron in metal particles, thermal losses can be substantially reduced.
2, periodic dielectric grain array can produce the diffraction coupled resonance being similar to metallic particles array,
The narrow wavelength light of electromagentic resonance being capable of strong local absorbs, and this resonance mode is when near metal,
Intercouple with the phasmon of metal surface, further enhance electromagnetic wave and dielectric grain action intensity, because of
This can realize the strong locally resonant response of narrow wavelength in uneven environment.
3, by changing the arrangement cycle of dielectric grain, electromagnetic energy can be regulated in dielectric layer and dielectric
The assimilation ratio of grain, thus reduce metal fever loss.
Accompanying drawing explanation
Fig. 1 is the structural representation of phasmon narrow-band absorption thin film of the present invention；
Fig. 2 is the phasmon narrow-band absorption thin film under perpendicular electromagnetic field (wave vector direction is along Z axis) is incident
The reflection on surface and absorption spectrum curve；
Fig. 3 is that electric field intensity is along silicon dielectric grain center XZ mapping；
Fig. 4 is the silicon dielectric grain layer of the material surface under perpendicular electromagnetic field incidence and silver metal dielectric layer divides
Other absorption spectrum curve；
Fig. 5 is argent dielectric layer, and the absorption intensity peak value of silicon dielectric grain layer and total electromagnetic wave is to week
The change curve of phase.
Detailed description of the invention
Below in conjunction with the accompanying drawings the detailed description of the invention of the phasmon narrow-band absorption thin film that the present invention provides is done
Describe in detail.In Fig. 1, X-axle, Y-axle and Z-axle represent X-axis, Y-axis and Z axis respectively.
Seeing Fig. 1, phasmon narrow-band absorption thin film of the present invention includes basal layer 101, is arranged at described base
The dielectric layer 102 on bottom 101 surface, the sealing coat 103 being arranged on described dielectric layer 102 surface and setting
Dielectric grain layer 104 on described sealing coat 103 surface.
Described dielectric grain layer 104 is pressed some cycles arrangement by multiple dielectric grains 105 and is formed.The most adjacent
Distance between two dielectric grains 105 is equal, and the cycle P of described dielectric grain 105 is adjacent two
Distance between dielectric grain 105 and the diameter sum of dielectric grain 105.In this embodiment,
Described dielectric grain 105 forms dielectric grain layer 104 according to a parallelogram array arrangement.Such as, four
Individual dielectric grain 105, can be respectively set to four summits of parallelogram array, described parallelogram
The angle theta on adjacent two limit of array is in the range of 0 ° of ＜ θ≤90 °.Dielectric grain 105 of the present invention
Dielectric grain layer 104 is formed so that dielectric grain layer 104 can swashing at electromagnetic wave by some cycles arrangement
Giving the anomalous diffraction resonance mode producing certain wavelength, this resonance mode can be with metal phasmon phase
Mutual coupling, and then strengthen electromagnetic wave and dielectric grain 105 action intensity, and can be by regulation dielectric grain
The arrangement cycle of 105 regulates and controls dielectric layer 102 and the dielectric grain layer 104 absorption intensity to electromagnetic wave.
The material of described dielectric grain 105 can be organic material or inorganic material；Described organic material is for having
Machine polymer any one；Described inorganic material is silicon, germanium, titanium dioxide, gallium phosphide, GaAs, sulfur
In cadmium, zinc oxide, gallium nitride, cadmium selenide, any one or one can use micro-fabrication technology or receive
The material of the high index of refraction of rice fabrication technique is made.
The shape of described dielectric grain 105 can have any shape, such as, spheroid, cylinder, pyramid, many
Face body, the present invention does not limits.In this detailed description of the invention, the material of described dielectric grain 105 is silicon,
Being chosen for spheroid, its radius r chooses 65nm, and period p can be: 300nm-700nm.
Further, described phasmon narrow-band absorption thin film, by the exciting of electromagnetic wave of certain wavelength, is given an account of
The cycle of electricity granule 105 is 0.05-1 with the ratio range of the wavelength of described electromagnetic wave.Described dielectric grain 105
The ratio range of wavelength of size and described electromagnetic wave be 0.05-1.The size of described dielectric grain 105 refers to
Dielectric grain 105 greatest length in all directions.
Described basal layer 101 plays the effect supporting substrate, and its material is the present invention do not limit.
Described dielectric layer 102 plays electromagnetic field reflection and the effect of phasmon local excition, at excitaton source
After electromagnetic field and dielectric grain layer 104 effect, a part of electromagnetic field can pass through dielectric grain layer 104, medium
The electromagnetic field that layer 102 can will transmit through reflects and effect produces phasmon vibration therewith, further increases
The locality of strong-electromagnetic field and absorption efficiency.The material of described dielectric layer 102 can be Graphene or metal,
Described metal can be any one or a few alloy in gold, silver, aluminum, copper, titanium, nickel, chromium.At this
In detailed description of the invention, employing ag material as dielectric layer 102, dielectric functions dispersion relation is: Wherein, εAgFor the dielectric functions of silver, εbFor
The electric medium constant part of silver, EpFor the plasma oscillation energy of the free electron gas of silver, γ is the freedom of silver
In the vibration relaxation time of electron gas, E is the oscillation energy of electromagnetic wave.
Described sealing coat 103 is mainly for regulation dielectric grain 105 array resonance mode and underlying dielectric layers
The stiffness of coupling of 102 metal phasmons, can regulate medium by changing the thickness d of sealing coat 103
Layer 102 and the electromagnetic energy absorption ratio of dielectric grain layer 104.Secondly can be by regulation sealing coat 103
Thickness d, the peak position of large range of regulation narrow-band absorption, the most described sealing coat
The thickness d of 103 is 5nm.The material of described sealing coat 103 can be silicon dioxide, aluminium sesquioxide,
The low-refraction dielectric materials such as tetrafluoride magnesium.
Further, the refractive index of described dielectric grain layer 104 is more than the refractive index of described sealing coat 103, excellent
Selection of land, the refractive index of described dielectric grain layer 104 is more than with the ratio of the refractive index of described sealing coat 103
1.4, the refractive index of described sealing coat 103 is more than 1.Have an advantage in that, make the more local of electromagnetic energy exist
Dielectric grain less than 105 and the region of dielectric layer more than 102, reduce the radiation in electromagnetism wave direction air, increases
Strong dielectric grain 105 and the dielectric layer 102 absorption to electromagnetic energy.
The phasmon narrow-band absorption thin film of the present invention produces abnormal spreading out based on periodic dielectric grain array
Penetrate resonance mode and the mirror effect of metal and metal phasmon interacts and realizes the narrow of wavelengthtunable
Band absorbing membrane.Single dielectric grain in free space can produce certain wavelength under the irradiation of electromagnetic field
Resonance mode, this kind of resonance mode be also referred to as dielectric grain Mie scattering vibration.Properly select
Dielectric grain and metal liner is excited from the excitation electromagnetic field characteristic (as electric field intensifies direction and frequency) of light source
The resonance mode at the end, excitation source can include any for launching the suitable of electromagnetic wave with desired wavelength
Source, and can the radiation of wavelengthtunable.Such as, commercially available arrives semiconductor laser, He-Ne Lasers
Device, carbon dioxide laser, light emitting diode, electric filament lamp and many radiation-emitting sources known to other.When
When dielectric grain forms periodic array arrangement, intercouple between Mie scattering resonance pattern, produce
Anomalous diffraction resonates.This anomalous diffraction resonance mode is further by mirror effect and the phasmon of metal
Effect interacts, it is possible to optionally by the electromagnetic wave energy local of a certain specialized narrowband wavelength at metal and
Between dielectric grain (as shown in Figure 2), electromagnetic energy is stoped to dissipate to free space.The mirror image effect of metal
Should enhance dielectric grain array and metal with phasmon effect selects the absorption of wavelength to imitate to electromagnetic wave
Rate, it is achieved the arrowband hypersorption to incident electromagnetic wave.By regulating the cycle of dielectric grain array, it is possible to flat
Weighing apparatus electromagnetic energy assimilation ratio (as shown in Figure 5) between dielectric grain array and metal, reduces metal
Thermal losses, strengthen dielectric grain array absorption characteristic.
Use time-domain finite difference that this detailed description of the invention phasmon narrow-band absorption thin film is carried out
Analogue simulation, Fig. 2 show phasmon narrow-band absorption thin film period p=540nm, dielectric grain 105 half
Footpath r=65nm, during sealing coat 103 thickness d=5nm, vertically in the detailed description of the invention that the present invention provides
The reflection of the material surface under electromagnetic field (wave vector direction is along Z axis) is incident and absorption spectrum curve.By Fig. 2
Visible, at electromagnetic wavelength 598.5nm, this structure obtains the electromagnetic wave hypersorption of 94%, its Absorber Bandwidth
Close to 7nm.
Fig. 3 show phasmon narrow-band absorption thin film in this detailed description of the invention and, at period p=540nm, is situated between
Electricity granule 105 radius r=65nm, under sealing coat 103 thickness d=5nm parameter, at electromagnetic wavelength 598.5nm
Exciting down, electric field intensity is along silicon dielectric grain 105 center XZ mapping.Fig. 3 is visible, electromagnetic field and
Most of electric field energy of Thin Films effect occupy silicon dioxide isolation under silicon dielectric grain layer 104
On layer 103, the especially contact point both sides at silicon dielectric grain 105 and silicon dioxide sealing coat 103 are tens of
Nano-area scope, electric field intensity has obtained great enhancing, and its enhanced intensity reaches about 40 times.
Fig. 4 show in this detailed description of the invention phasmon narrow-band absorption thin film at p=540nm,
Under r=65nm, d=5nm parameter, the silicon dielectric grain layer 104 of the material surface under perpendicular electromagnetic field incidence
With dielectric layer 102 absorption spectrum curve respectively, its dielectric layer 102 uses argent to make.Can by Fig. 4
Seeing, the phasmon narrow-band absorption thin film in this detailed description of the invention is divided into two parts to the absorption of electromagnetic field,
A part is absorbed by silicon dielectric grain layer 104, and another part is absorbed by dielectric layer 102.
Fig. 5 show in this detailed description of the invention phasmon narrow-band absorption thin film at dielectric grain 105 radius
R=65nm, under sealing coat 103 thickness d=5nm parameter, is 300-700nm in period p, periodic sampling
During the 20nm of interval, the dielectric layer 102 of phasmon narrow-band absorption thin film of the present invention, silicon dielectric grain layer 104
And the change curve that the absorption intensity peak value of total electromagnetic wave is to the cycle.As seen from Figure 5, this is concrete real
Execute the phasmon narrow-band absorption thin film dielectric layer 102 in mode and silicon dielectric grain 105 to electromagnetic wave
Absorption intensity changes along with the change in dielectric grain 105 cycle.When the cycle is less than 560nm, silicon is situated between
Electricity granular layer 104 to the absorption intensity of electromagnetic wave more than the absorption intensity of dielectric layer 102, and the cycle relatively
Hour, the energy of almost all of electromagnetic wave is all absorbed by silicon dielectric grain layer 104.And it is bigger in the cycle
Time, the absorption of electromagnetic wave is gradually strengthened by dielectric layer 102, and the absorption intensity of silicon dielectric grain layer 104 subtracts
Weak.When the cycle increases further, phasmon narrow-band absorption thin film absorption intensity total to electromagnetic wave will be rapidly
Reduce.As can be seen here, electromagnetic wave energy can be improved exist by regulating the cycle of silicon dielectric grain 105
Assimilation ratio between dielectric grain layer 104 and dielectric layer 102.
The above is only the preferred embodiment of the present invention, it is noted that common for the art
Technical staff, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these
Improvements and modifications also should be regarded as protection scope of the present invention.
Claims (10)
1. a phasmon narrow-band absorption thin film, including basal layer and the medium that is arranged at described substrate surface
Layer, it is characterised in that also include the sealing coat being arranged on described dielectric layer surface and be arranged on described every
The dielectric grain layer on absciss layer surface, described dielectric grain layer is pressed some cycles arrangement by multiple dielectric grains
Formed.
Phasmon narrow-band absorption thin film the most according to claim 1, it is characterised in that described dielectric
Grain forms dielectric grain layer according to a parallelogram array arrangement.
Phasmon narrow-band absorption thin film the most according to claim 2, it is characterised in that described parallel four
The angle theta on the both sides of limit shape array is in the range of 0 ° of ＜ θ≤90 °.
Phasmon narrow-band absorption thin film the most according to claim 1 and 2, it is characterised in that the most adjacent
Two dielectric grains between distance equal, the cycle of described dielectric grain is adjacent two dielectrics
Distance between granule and the diameter sum of dielectric grain.
Phasmon narrow-band absorption thin film the most according to claim 4, it is characterised in that described grade is from swashing
Unit's narrow-band absorption thin film is by the exciting of electromagnetic wave of certain wavelength, and the cycle of described dielectric grain is with described
The ratio range of the wavelength of electromagnetic wave is 0.05-1.
Phasmon narrow-band absorption thin film the most according to claim 1, it is characterised in that described grade is from swashing
Unit's narrow-band absorption thin film is by the exciting of electromagnetic wave of certain wavelength, and the size of described dielectric grain is with described
The ratio range of the wavelength of electromagnetic wave is 0.05-1.
Phasmon narrow-band absorption thin film the most according to claim 1, it is characterised in that described dielectric
The refractive index of granulosa is more than the refractive index of described sealing coat.
Phasmon narrow-band absorption thin film the most according to claim 1, it is characterised in that described dielectric
The refractive index of granulosa is more than 1.4 with the ratio of the refractive index of described sealing coat.
Phasmon narrow-band absorption thin film the most according to claim 1, it is characterised in that described dielectric
The material of grain is the one in inorganic material or organic material.
Phasmon narrow-band absorption thin film the most according to claim 1, it is characterised in that described dielectric layer
Material be Graphene or metal.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811314A (en) * | 2019-03-13 | 2019-05-28 | 电子科技大学 | A kind of visible light high-selenium corn far infrared high reflection film and preparation method thereof |
| CN113030026A (en) * | 2021-03-07 | 2021-06-25 | 天津理工大学 | LSPR multi-wavelength narrow-band tunable sensor |
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| EP0822407A2 (en) * | 1996-07-29 | 1998-02-04 | Forschungszentrum Rossendorf e.V. | Composite material for resonance-enhancement of optical signals and process of fabrication |
| CN101740722A (en) * | 2009-12-25 | 2010-06-16 | 中国科学院光电技术研究所 | Almost perfect absorbing structure for wide wave band |
| CN102709708A (en) * | 2012-06-28 | 2012-10-03 | 中国人民解放军国防科学技术大学 | Electromagnetic wave absorbing material with periodic structure, and preparation method thereof |
| CN103513316A (en) * | 2013-09-29 | 2014-01-15 | 苏州大学 | Selective absorption filtering structure |
| CN103969712A (en) * | 2014-04-11 | 2014-08-06 | 上海理工大学 | Manufacturing method for broadband THz wave absorber unrelated to wide-angle polarization |
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2015
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0822407A2 (en) * | 1996-07-29 | 1998-02-04 | Forschungszentrum Rossendorf e.V. | Composite material for resonance-enhancement of optical signals and process of fabrication |
| CN101740722A (en) * | 2009-12-25 | 2010-06-16 | 中国科学院光电技术研究所 | Almost perfect absorbing structure for wide wave band |
| CN102709708A (en) * | 2012-06-28 | 2012-10-03 | 中国人民解放军国防科学技术大学 | Electromagnetic wave absorbing material with periodic structure, and preparation method thereof |
| CN103513316A (en) * | 2013-09-29 | 2014-01-15 | 苏州大学 | Selective absorption filtering structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811314A (en) * | 2019-03-13 | 2019-05-28 | 电子科技大学 | A kind of visible light high-selenium corn far infrared high reflection film and preparation method thereof |
| CN113030026A (en) * | 2021-03-07 | 2021-06-25 | 天津理工大学 | LSPR multi-wavelength narrow-band tunable sensor |
| CN113030026B (en) * | 2021-03-07 | 2022-11-04 | 天津理工大学 | LSPR multi-wavelength narrow-band tunable sensor |
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| CN106033829B (en) | 2019-04-23 |
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