CN112230321B - High-temperature-resistant spectral-selective infrared stealth coating and preparation method thereof - Google Patents
High-temperature-resistant spectral-selective infrared stealth coating and preparation method thereof Download PDFInfo
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- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
- G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
The invention discloses a high-temperature-resistant spectral selective infrared stealth coating, which is an oxide coating and is prepared by combining two or more of cerium oxide, aluminum oxide, zirconium oxide, yttrium oxide, magnesium oxide, barium oxide, strontium oxide, silicon carbide and silicon nitride. The invention also provides a preparation method of the high-temperature-resistant spectral selective infrared stealth coating, which is characterized in that the coating is prepared by a plasma spraying or silk-screen printing process, the emission characteristics of the infrared spectrum of the coating are regulated and controlled by compounding different oxide materials and processing at different temperatures, and the low emissivity in a wave band of 3.0-5.0 mu m and the high emissivity in a wave band of 5.0-25.0 mu m are realized.
Description
Technical Field
The invention belongs to the technical field of functional materials, particularly relates to a high-temperature-resistant spectral selective infrared stealth coating and a preparation method thereof, and relates to a coating preparation method which can be used in the field of radar wave absorption and infrared stealth compatibility.
Background
Infrared stealth techniques are used to reduce or alter the infrared radiation characteristics of an object, thereby making it difficult for an enemy infrared detection device to discover or reduce its detection capabilities. Currently, the use of low emissivity ir stealth coatings remains the dominant mode of ir stealth. The traditional infrared low-emissivity coating has low emissivity in the whole infrared band, and covers the infrared detection band. According to the Stefan-Boltzmann law: m ═ ε σ T4The intensity of the infrared radiation is related to the temperature T and the emissivity epsilon. And adjusting the surface temperature T and emissivity epsilon of the target to reduce the infrared radiation emittance M of the target and realize infrared stealth. It is currently common to apply a full-band low emissivity coating to the target surface.
The traditional infrared stealth coating has low emissivity in the whole infrared band, covers the window band of infrared detection, but has the characteristic of low selectivity and emission. The full-wave band infrared emissivity can affect the heat conduction process, resulting in heat accumulation and temperature rise. The increase in temperature results in an increase in the degree of emergence of the infrared radiation, increasing detectability. Therefore, the traditional infrared stealth coating brings the compatibility problem of stealth and heat dissipation. Therefore, the ideal infrared stealth coating should have the following performance characteristics: in the infrared detection window wave band, the coating has lower emissivity so as to reduce the detectability of the coating; the emissivity at the non-window wave band is as high as possible, so that heat can be diffused in time to meet the requirement of heat dissipation. Therefore, the development of the infrared stealth coating with spectrum selective emission solves the contradiction between infrared stealth and radiation heat dissipation, and is the key for realizing infrared stealth.
In the present phase, researchers are increasingly researching on the modulation of spectral emission and radiation in the visible light band. The coating plays an important role in solar photo-thermal conversion, and plays an important role in improving photo-thermal conversion efficiency and popularizing solar photo-thermal application. However, it is not uncommon to study the regulation of the spectral emission radiation in the infrared band, and even to apply coatings with spectrally selective low emissivity properties to the field of infrared stealth. For radar stealth, the reflection signal of a radar wave incident on the surface of a material is reduced. However, since the low absorption in the window band required by infrared stealth is contradictory to the high absorption of microwave required by radar stealth, it is difficult to develop infrared and radar compatible stealth coatings.
Therefore, a spectrally selective radiation infrared stealth coating which has a simple structure, has a spectrally selective emission characteristic and is suitable for a high-temperature environment is urgently needed in the market.
Disclosure of Invention
Aiming at the problem that the traditional infrared stealth coating only adopts a low-emissivity coating or reduces the infrared radiation characteristic of an actual temperature suppression target to difficultly achieve an ideal infrared stealth effect, the invention provides a high-temperature-resistant spectrally selective infrared stealth coating and a preparation method thereof, wherein the spectrally selective infrared stealth coating is an inorganic compound composite coating with infrared stealth characteristics, the inorganic compound composite coating can be applied to substrates such as ceramics, metals, composite materials and the like, the spectrally selective infrared stealth coating has lower emissivity at an infrared detection waveband of 3-5 mu m even at a high temperature of 500 ℃, and has higher emissivity at a waveband of 5-25 mu m, so that the coating has the infrared stealth function, and simultaneously, the coating and a radar absorbing functional layer are compounded to meet the requirement of multiband stealth.
The invention relates to a preparation method of a high-temperature-resistant spectral selective infrared stealth coating, which comprises the following steps of:
1) preparing raw materials:
preparing an inorganic phase: a combination of two or more selected from the group consisting of cerium oxide, aluminum oxide, zirconium oxide, yttrium oxide, magnesium oxide, barium oxide, strontium oxide, silicon carbide, silicon nitride, when mixed, in any proportion;
organic phase preparation: dissolving ethyl cellulose in terpineol at 90 ℃, wherein the ethyl cellulose and the terpineol are prepared according to the following formula (4-6): (94-96) to obtain a yellow transparent liquid;
preparing functional auxiliary agents: the dispersant is selected from long-chain fatty acid, which is one of stearic acid with functional amine, acid ester or alcohol group; the sintering aid is selected from one of lithium chloride, lithium oxide and yttrium oxide; the mass ratio of the dispersing agent to the sintering aid is 1: 1;
inorganic phase, organic phase and functional auxiliary agent according to the proportion of (61-63): (36-38): 1 in mass ratio;
2) uniformly mixing the organic phase obtained in the previous step with a dispersion machine, then mixing the organic phase with an inorganic phase, and performing ball milling and uniform mixing through a planetary ball mill to obtain a paste, wherein the viscosity range of the ball-milled material is 9000-;
3) the preparation process of the coating comprises the following steps: the material obtained in the previous step is prepared by:
firstly, screen printing: repeatedly coating, drying the substrate coated with the coating each time, drying the solvent, then printing the coating on the dried coating, repeatedly coating, wherein the final coating thickness is 15-30 mu m, after drying the solvent, placing the substrate coated with the coating in a high-temperature furnace, completely sintering the coating, and the thickness of the sintered coating is 10-20 mu m;
or is
Plasma spraying: ball-milling and mixing uniformly, granulating by a spray drying process to obtain agglomerated powder, roasting the agglomerated powder at high temperature to obtain finished powder suitable for a plasma spraying process, and finally performing high-temperature-resistant spectral selective infrared stealth coating on a substrate by the plasma spraying process.
In the step 1) of the invention, the oxide is selected from cerium oxide, zirconium oxide, aluminum oxide, yttrium oxide, magnesium oxide, barium oxide, strontium oxide, silicon carbide and silicon nitride, the purity of the oxide is more than or equal to 99%, and the average grain diameter is 1.0-3.0 μm.
The organic phase preparation in step 1) is to dissolve ethyl cellulose in terpineol at 90 ℃, wherein the weight ratio of ethyl cellulose to terpineol is 5: 95 to obtain yellow transparent liquid;
the inorganic phase, the organic phase and the functional auxiliary agent in the step 1) are prepared according to the following steps of 62: 37: 1, mass ratio.
In the step 1), ethyl cellulose is used as a thickening agent to provide initial attachment, terpineol is used as a solvent to dissolve the ethyl cellulose thickening agent to promote the organic phase and the inorganic phase to be uniformly mixed, and long-chain fatty acid is used as a functional auxiliary agent to promote the mixing.
In the step 1), only inorganic phase is left after the inorganic phase uncoated main body material is subjected to a sintering process, the specific proportion of the inorganic phase is blended according to the actual infrared characteristic requirement, and the infrared characteristics are different in different proportions.
The substrate in the step 3) is selected from one of C/SiC ceramic matrix composite materials, alumina ceramics and high-temperature nickel-based alloys.
The silk-screen printing of step 3) refers to: repeatedly coating for 4-6 times by adopting a 150-mesh silk screen, placing the substrate coated with the coating in an oven for drying after each coating, printing the coating on the dried coating after drying the solvent, repeatedly coating for 4-6 times, wherein the final coating thickness is 15-30 mu m, placing the substrate coated with the coating in a high-temperature furnace after drying the solvent, slowly heating to 300 ℃ for sintering for 1-2h to remove residual organic matters, slowly heating to 1000 ℃ and 1500 ℃, and preserving heat for 4-24h until the coating is completely sintered, wherein the thickness of the sintered coating is 10-20 mu m.
The invention also relates to a high-temperature-resistant spectrally selective infrared stealth coating obtained by the preparation method of the high-temperature-resistant spectrally selective infrared stealth coating, which is an oxide coating, wherein the infrared emissivity of 3-5 mu m is less than 0.3, and the infrared emissivity of 5-25 mu m is more than 0.80.
Compared with the prior art, the invention has the following advantages:
1. the high-temperature-resistant spectrum selective coating is obtained by optimizing the compounding of the oxide formula and preferably selecting the combination of low emissivity in a window waveband and high emissivity in a non-window waveband, and through theoretical analysis and calculation: the emissivity of the high-temperature-resistant spectrum selective material is below 0.3 at an infrared window waveband of 3.0-5.0 mu m, and the emissivity of the high-temperature-resistant spectrum selective material can reach above 0.85 at a non-window waveband of 5.0-25.0 mu m.
2. The invention provides a preparation method of a high-temperature-resistant spectral selective infrared stealth coating, which is characterized in that the coating is prepared by a plasma spraying or silk-screen printing process, the infrared spectrum characteristics of the coating are regulated and controlled by compounding different oxide materials and processing at different temperatures, and the low emissivity at a wave band of 3.0-5.0 mu m and the high emissivity at a wave band of 5.0-25.0 mu m are realized.
3. The high-temperature-resistant spectrum selective material has a simple structure, and is convenient for large-area preparation and application. The high-temperature-resistant spectrum selective material has the advantages of simple and feasible preparation process, good repeatability and low equipment requirement.
Drawings
FIG. 1 is a graph of emissivity of a high temperature resistant spectrally selective infrared stealth coating prepared in accordance with the present invention.
Fig. 2 is a graph comparing a composite coated with a high temperature resistant spectrally selective infrared stealth coating prepared in accordance with the present invention (left) to a composite not coated with a high temperature resistant spectrally selective infrared stealth coating prepared in accordance with the present invention (right).
Detailed Description
The present invention is described in further detail below by way of examples, which should not be construed as limiting the invention thereto.
Example 1:
a preparation method of a high-temperature-resistant spectrally selective infrared stealth coating comprises the following steps:
1) preparing raw materials:
preparing an inorganic phase: 90g of zirconium oxide, 5g of cerium oxide and 5g of calcium oxide; the purity of the oxide is more than or equal to 99 percent, and the average grain diameter is 1.0-3.0 mu m;
organic phase preparation: ethyl cellulose was dissolved in terpineol at 90 ℃, the ratio of ethyl cellulose to terpineol was measured as 4: 96 to obtain yellow transparent liquid;
preparing functional auxiliary agents: the dispersant is selected from stearic acid with a functional amine; the sintering aid is selected from lithium chloride; the mass ratio of the dispersing agent to the sintering aid is 1: 1;
inorganic phase, organic phase, functional assistant, according to 61: 38: 1 in mass ratio;
2) uniformly mixing the organic phase obtained in the previous step with a dispersion machine, then mixing the organic phase with an inorganic phase, and performing ball milling and uniform mixing through a planetary ball mill to obtain a paste, wherein the viscosity range of the ball-milled material is 9000-;
3) the preparation process of the coating comprises the following steps: through a screen printing mode, a 150-mesh screen is adopted, the substrate coated with the coating is repeatedly coated for 4 times, the substrate is selected from a C/SiC ceramic matrix composite after each coating, the substrate is placed in a 60-DEG C oven to be dried for 15min, the coating is printed on the dried coating after the solvent is dried, the coating is repeatedly coated for 6 times, the thickness of the final coating is 15-30 mu m, after the solvent is dried, the substrate coated with the coating is placed in a high-temperature furnace, the temperature is slowly increased to 300 ℃ and sintered for 1h to remove residual organic matters, then the temperature is slowly increased to 1500 ℃, the temperature is kept for 10h until the coating is completely sintered, and the thickness of the sintered coating is 10-20 mu m.
The high temperature resistant spectrally selective infrared stealth coating prepared in this example has an emissivity of 0.24 at an infrared window band of 3.0 μm to 5.0 μm and an emissivity of 0.86 at a non-window band of 5.0 μm to 25.0 μm.
Example 2:
a preparation method of a high-temperature-resistant spectrally selective infrared stealth coating comprises the following steps:
1) preparing raw materials:
preparing an inorganic phase: 70g of cerium oxide, 5g of calcium oxide and 20g of magnesium oxide; the purity of the oxide is more than or equal to 99 percent, and the average grain diameter is 1.0-3.0 mu m;
organic phase preparation: ethyl cellulose was dissolved in terpineol at 90 ℃, the ethyl cellulose and terpineol were mixed according to a 6: 94, obtaining yellow transparent liquid;
preparing functional auxiliary agents: the dispersant is selected from stearic acid with an acidic ester; the sintering aid is selected from lithium oxide; the mass ratio of the dispersing agent to the sintering aid is 1: 1;
inorganic phase, organic phase, functional assistant, according to 63: 36: 1 in mass ratio;
2) uniformly mixing the organic phase obtained in the previous step with a dispersion machine, then mixing the organic phase with an inorganic phase, and performing ball milling and uniform mixing through a planetary ball mill to obtain a paste, wherein the viscosity range of the ball-milled material is 9000-;
3) the preparation process of the coating comprises the following steps: through a screen printing mode, a 150-mesh screen is adopted, the coating is repeatedly coated for 6 times, the substrate coated with the coating is placed in an oven at 60 ℃ and dried for 15min after being coated each time, the coating is printed on the dried coating after the solvent is dried, the coating is repeatedly coated for 4 times, the thickness of the final coating is 15-30 mu m, after the solvent is dried, the substrate coated with the coating is placed in a high-temperature furnace, the temperature is slowly increased to 300 ℃ and sintered for 1h to remove residual organic matters, then the temperature is slowly increased to 1100 ℃, the temperature is kept for 12h until the coating is completely sintered, and the thickness of the sintered coating is 10-20 mu m.
The high temperature resistant spectrally selective infrared stealth coating prepared in this example has an emissivity of 0.26 at an infrared window band of 3.0 μm to 5.0 μm and an emissivity of 0.84 at a non-window band of 5.0 μm to 25.0 μm.
Example 3:
a preparation method of a high-temperature-resistant spectrally selective infrared stealth coating comprises the following steps:
1) preparing raw materials:
preparing an inorganic phase: 10g of calcium oxide, 40g of cerium oxide, 30g of zirconium oxide and 20g of aluminum oxide; the purity of the oxide is more than or equal to 99 percent, and the average grain diameter is 1.0-3.0 mu m;
organic phase preparation: ethyl cellulose was dissolved in terpineol at 90 ℃, the ethyl cellulose and terpineol were mixed according to a 5: 95 to obtain yellow transparent liquid;
preparing functional auxiliary agents: the dispersant is selected from stearic acid having an alcohol group; the sintering aid is selected from yttrium oxide; the mass ratio of the dispersing agent to the sintering aid is 1: 1;
inorganic phase, organic phase, functional assistant, according to 62: 37: 1 in mass ratio;
2) uniformly mixing the organic phase obtained in the previous step with a dispersion machine, then mixing the organic phase with an inorganic phase, and performing ball milling and uniform mixing through a planetary ball mill to obtain a paste, wherein the viscosity range of the ball-milled material is 9000-;
3) the preparation process of the coating comprises the following steps: plasma spraying: ball-milling and mixing uniformly, granulating by a spray drying process to obtain agglomerated powder, roasting the agglomerated powder at a high temperature to obtain finished powder suitable for a plasma spraying process, and finally carrying out high-temperature-resistant spectral selective infrared stealth coating on a substrate by the plasma spraying process, wherein the substrate is selected from alumina ceramics.
The high temperature resistant spectrally selective infrared stealth coating prepared in this example has an emissivity of 0.26 at the infrared window band of 3.0 μm to 5.0 μm and an emissivity of 0.84 at the band of 5.0 μm to 25.0 μm.
Example 4:
a preparation method of a high-temperature-resistant spectrally selective infrared stealth coating comprises the following steps:
1) preparing raw materials:
preparing an inorganic phase: 60g of magnesium oxide, 30g of aluminum oxide and 10g of yttrium oxide; the purity of the oxide is more than or equal to 99 percent, and the average grain diameter is 1.0-3.0 mu m;
preparation of an organic phase: dissolving ethylcellulose in terpineol at 90 ℃, the ethylcellulose and terpineol being present in a ratio of 5: 95 to obtain yellow transparent liquid;
preparing a functional auxiliary agent; selected from stearic acid with functional amines;
inorganic phase, organic phase, functional assistant, according to 62: 37: 1 in mass ratio;
2) uniformly mixing the organic phase obtained in the previous step with a dispersion machine, then mixing the organic phase with an inorganic phase, and performing ball milling and uniform mixing through a planetary ball mill to obtain a paste, wherein the viscosity range of the ball-milled material is 9000-;
3) the preparation process of the coating comprises the following steps: plasma spraying: the preparation method comprises the steps of installing inorganic metal oxides in a specific proportion, ball-milling and mixing uniformly, granulating through a spray drying process to obtain agglomerated powder, roasting the agglomerated powder at a high temperature to obtain finished powder suitable for a plasma spraying process, and finally coating a high-temperature-resistant spectral selective infrared stealth coating on a substrate through the plasma spraying process, wherein the substrate is selected from high-temperature nickel-based alloys.
The high temperature resistant spectrally selective infrared stealth coating prepared in this example has an emissivity of 0.25 at the infrared window band of 3.0 μm to 5.0 μm and an emissivity of 0.85 at the band of 5.0 μm to 25.0 μm.
Comparative example 1: the coating process was replaced by knife coating and the other steps were the same as in example 1.
The high-temperature-resistant spectral selective infrared stealth coating prepared by the comparative example has the emissivity of 0.33 at the infrared window waveband of 3.0-5.0 mu m and the emissivity of 0.82 at the waveband of 5.0-25.0 mu m, and the coating after being changed into a blade coating is poor in flatness after being formed and has agglomeration phenomenon, so that the sintering of the coating is influenced.
Comparative example 2: the inorganic phase was replaced with aluminum, iron, copper, and metal powders of silver, gold, platinum, etc., and the other steps were the same as in example 1.
The high-temperature-resistant spectral selectivity infrared stealth coating prepared by the comparative example has the emissivity of 0.16-0.20 at the infrared window waveband of 3.0-5.0 mu m and the emissivity of less than 0.5 at the waveband of 5.0-25.0 mu m, and the infrared spectrum selectivity of the coating prepared by metal powder is poorer than that of metal oxide.
Comparative example 3: the organic phase was exchanged for methylcellulose and the other steps were the same as in example 1.
The high-temperature-resistant spectral selective infrared stealth coating prepared by the comparative example has the emissivity of 0.31 at the infrared window waveband of 3.0-5.0 mu m and the emissivity of 0.78 at the waveband of 5.0-25.0 mu m, the compatibility of methyl cellulose and the whole system is not as good as that of ethyl cellulose, and the base material of the coating after ball milling has poor uniformity, thus affecting the flatness of the coating.
Comparative example 4: the raw material preparation step was carried out in the same manner as in example 1 except that lithium chloride as a sintering aid was not used.
According to the high-temperature-resistant spectral selectivity infrared stealth coating prepared by the comparative example, the coating obtained by sintering at the same temperature of 1100 ℃ is not completely sintered and is easy to fall off, and the emissivity of the coating at the wave band of 3.0-5.0 mu m is higher than 0.33, mainly because lithium chloride serving as a sintering aid can reduce the sintering temperature and is beneficial to sintering and forming of the coating.
And (4) analyzing results:
1. through comparison of basic performances of the embodiment and the comparative example, the formula of the embodiment finally obtains the selective infrared stealth coating with emissivity less than 0.3 at a wave band of 3.0-5.0 mu m and emissivity more than 0.8 at an outer wave band of an atmospheric window by a screen printing process through different characteristics of different metal oxides in an infrared absorption spectrum, and the coating is simple in preparation process, easy to amplify and produce and suitable for preparing the spectrum selective infrared stealth coating.
2. According to the high-temperature-resistant spectral selectivity infrared stealth coating prepared by the embodiment, the emissivity of the high-temperature-resistant spectral selectivity infrared stealth coating in a 3-25 mu m wave band is tested, and as can be seen from the figure, the average value of the emissivity in the 3.0-5.0 mu m wave band is 0.25, and the average value of the emissivity in the 5.0-25.0 mu m wave band is 0.85, so that the infrared stealth requirements of low emissivity in a 3.0-5.0 mu m detection wave band and high emissivity in a non-window wave band are met, the requirements of low emissivity and radiation heat dissipation are met, and the raw materials used in the embodiment are cheap and easy to obtain; the coating has a simple structure and is light and thin; the coating process is simple and easy to enlarge production.
Claims (7)
1. A preparation method of a high-temperature-resistant spectral selective infrared stealth coating is characterized by comprising the following steps: the method comprises the following steps:
1) preparing raw materials:
preparing an inorganic phase: a combination of a plurality of materials selected from the group consisting of cerium oxide, aluminum oxide, zirconium oxide, yttrium oxide, magnesium oxide, barium oxide, strontium oxide, silicon carbide, silicon nitride, when mixed, in any proportion;
organic phase preparation: dissolving ethyl cellulose in terpineol at 90 ℃, wherein the weight ratio of ethyl cellulose to terpineol is 4-6: 94-96 mass ratio to obtain yellow transparent liquid;
preparing functional auxiliary agents: the dispersant is selected from long-chain fatty acid, which is one of stearic acid with functional amine, acid ester or alcohol group; the sintering aid is selected from one of lithium chloride, lithium oxide and yttrium oxide; the mass ratio of the dispersing agent to the sintering aid is 1: 1;
inorganic phase, organic phase and functional assistant according to the proportion of 61-63: 36-38: 1 in mass ratio;
2) uniformly mixing the organic phase obtained in the previous step with a dispersion machine, then mixing the organic phase with an inorganic phase, and performing ball milling and uniform mixing through a planetary ball mill to obtain a paste, wherein the viscosity range of the ball-milled material is 9000-;
3) the preparation process of the coating comprises the following steps: the material obtained in the previous step is prepared by:
firstly, screen printing: repeatedly coating, drying the substrate coated with the coating each time, drying the solvent, then printing the coating on the dried coating, repeatedly coating, wherein the final coating thickness is 15-30 mu m, after drying the solvent, placing the substrate coated with the coating in a high-temperature furnace, completely sintering the coating, and the thickness of the sintered coating is 10-20 mu m;
or is
Plasma spraying: ball-milling and mixing uniformly, granulating by a spray drying process to obtain agglomerated powder, roasting the agglomerated powder at high temperature to obtain finished powder suitable for a plasma spraying process, and finally performing high-temperature-resistant spectral selective infrared stealth coating on a substrate by the plasma spraying process.
2. The method for preparing the high temperature resistant spectrally selective infrared stealth coating according to claim 1, characterized in that: the oxide selected from cerium oxide, zirconium oxide, aluminum oxide, yttrium oxide, magnesium oxide, barium oxide, strontium oxide, silicon carbide and silicon nitride in the step 1) has the purity of more than or equal to 99% and the average grain diameter of 1.0-3.0 mu m.
3. The method for preparing the high-temperature-resistant spectrally selective infrared stealth coating according to claim 1, characterized in that: the organic phase preparation in step 1) is to dissolve ethyl cellulose in terpineol 4 at 90 ℃, wherein the ratio of ethyl cellulose to terpineol is 5: 95 to obtain yellow transparent liquid.
4. The method for preparing the high-temperature-resistant spectrally selective infrared stealth coating according to claim 1, characterized in that: the inorganic phase, the organic phase and the functional auxiliary agent in the step 1) are prepared according to the following steps of 62: 37: 1, mass ratio.
5. The method for preparing the high-temperature-resistant spectrally selective infrared stealth coating according to claim 1, characterized in that: the substrate in the step 3) is selected from one of C/SiC ceramic matrix composite materials, alumina ceramics and high-temperature nickel-based alloys.
6. The method for preparing the high-temperature-resistant spectrally selective infrared stealth coating according to claim 1, characterized in that: the silk-screen printing of step 3) refers to: repeatedly coating for 4-6 times by adopting a 150-mesh silk screen, placing the substrate coated with the coating in an oven for drying after each coating, printing the coating on the dried coating after drying the solvent, repeatedly coating for 4-6 times, wherein the final coating thickness is 15-30 mu m, placing the substrate coated with the coating in a high-temperature furnace after drying the solvent, slowly heating to 300 ℃ for sintering for 1-2h to remove residual organic matters, slowly heating to 1000 ℃ and 1500 ℃, and preserving heat for 4-24h until the coating is completely sintered, wherein the thickness of the sintered coating is 10-20 mu m.
7. A high temperature resistant spectrally selective infrared stealth coating is characterized in that: the high temperature resistant spectrally selective infrared stealth coating produced by the method of any one of claims 1-6 is an oxide coating having an emissivity of less than 0.3 at 3-5 μm and an emissivity of greater than 0.80 at 5-25 μm.
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