CN109802662B - System and method for realizing semiconductor surface multipath discharge - Google Patents
System and method for realizing semiconductor surface multipath discharge Download PDFInfo
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- CN109802662B CN109802662B CN201811628783.2A CN201811628783A CN109802662B CN 109802662 B CN109802662 B CN 109802662B CN 201811628783 A CN201811628783 A CN 201811628783A CN 109802662 B CN109802662 B CN 109802662B
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Abstract
A system for realizing multi-path discharge of semiconductor surface is disclosed, which is composed of a plurality of discharge units and corresponding impedance regulation units; the plurality of discharge units are connected in series, the positive electrode of the first discharge unit is connected with the high-voltage end of the input voltage, and the negative electrode of the first discharge unit is connected with the positive electrode of the second discharge unit; the negative electrode of the last discharge unit is connected with the low-voltage end of the input voltage by the push; among the plurality of discharge cells, a connection point between two discharge cells connected to each other is connected to a low voltage end of an input voltage through an impedance feedback regulation unit. The working process of the system is also disclosed. The semiconductor surface multipath discharge system and the method can realize the multiple-electrode breakdown discharge without obviously increasing the breakdown voltage requirement, enlarge the heating area and improve the electric energy utilization rate.
Description
Technical Field
The invention relates to a plasma technology, in particular to a system and a method for realizing multi-path discharge of a semiconductor surface by using a feedback circuit.
Background
In the high altitude environment, the gas temperature is reduced, the air pressure is reduced, the fuel atomization effect is deteriorated, and these adverse factors put higher demands on the ignition system. Research has shown that the adoption of multi-path ignition can effectively improve ignition energy, increase ignition area and enhance the ignition capability of the electric nozzle under extreme conditions such as low pressure, low temperature and the like. The ignition electric nozzle used by the current aeroengine mainly comprises a high-voltage discharge electric nozzle and a semiconductor electric nozzle. The discharge characteristics of both types of electric nozzles have obvious negative impedance characteristics, so that multi-point parallel discharge cannot be realized. By combining in series, the ignition voltage will be increased, although multiple discharge ignitions can be achieved. Therefore, the high-voltage protection requirement of the ignition system is increased, the reliability of the system is reduced, and the practical value on a real aeroengine is limited. Through researches in the early stage, based on the thought of impedance regulation and control, a multi-channel discharge method is provided in a patent of a multi-channel arc discharge plasma generating device under the condition of single power supply atmospheric pressure, and the multi-channel discharge problem of an air along-surface electric nozzle is effectively solved on the premise of not obviously increasing ignition voltage. However, since the breakdown characteristics of a semiconductor electrode tip are quite different from those of an air-facing electrode tip, the resistance between electrode gaps of the semiconductor electrode tip is typically several kilo ohms before the electrode gaps break down, and thus cannot be treated as a purely capacitive impedance. This situation results in the existing method not solving the problem of multipoint discharge of the semiconductor electrode. Compared with air creeping discharge, the semiconductor discharge is less influenced by the air pressure and has lower breakdown voltage, so that the problem of multi-path discharge of the semiconductor electric nozzle is more important.
Disclosure of Invention
In view of the above, in order to realize the multi-path discharge of the semiconductor electric nozzle without obviously increasing the ignition voltage, the invention provides a system for realizing the multi-path discharge of the semiconductor surface based on the impedance feedback regulation and control thought, which consists of a plurality of discharge units and corresponding impedance regulation and control units; the plurality of discharge units are connected in series, the positive electrode of the first discharge unit is connected with the high-voltage end of the input voltage, and the negative electrode of the first discharge unit is connected with the positive electrode of the second discharge unit; the negative electrode of the last discharge unit is connected with the low-voltage end of the input voltage by the push; among the plurality of discharge cells, a connection point between two discharge cells connected to each other is connected to a low voltage end of an input voltage through an impedance feedback regulation unit: the connection point of the first discharging unit and the second discharging unit is connected with the low-voltage end of the input voltage through the first impedance feedback regulation unit, the connection point of the second discharging unit and the third discharging unit is connected with the low-voltage end of the input voltage through the second impedance feedback regulation unit, and the like until the last discharging unit.
In one embodiment of the present invention, the impedance feedback control unit is composed of a first resistor 201, a semiconductor discharge tube 202, a second resistor 203, a bidirectional transient diode TVS204, a high voltage insulated gate bipolar transistor IGBT205, a voltage stabilizing tube 206, and a high voltage diode 207; the negative electrode of the voltage stabilizing tube 206 is connected with the discharge units connected in series, namely, connected to the connection point of the two discharge units; the collector C pole of the high-voltage IGBT205 is connected with the positive pole of the voltage stabilizing tube 206; the first resistor 201 is connected between the negative electrode of the voltage stabilizing tube 206 and the gate G electrode of the high-voltage IGBT 205; TVS204 is connected in parallel between the G pole and the emitter E pole; one end of the resistor 203 is connected with the E pole, the other end of the resistor is connected with the positive end of the high-voltage diode 207, and the negative end of the high-voltage diode 207 is connected with the low-voltage end of the input voltage as the low-voltage end of the whole impedance feedback regulation unit; the semiconductor discharge tube 202 is connected between the positive terminal and the G pole of the high voltage diode 207.
In one embodiment of the invention, the system comprises four discharge units and three impedance feedback conditioning units.
In one embodiment of the invention, the discharge electrodes of the discharge cells are selected from bronze, stainless steel, platinum or tungsten, with the addition of a semiconductor auxiliary ignition material in the interstices between the electrodes; the first resistor 201 is a high-voltage resistance resistor, the voltage resistance value is higher than the high voltage input by a power supply, and the resistance value is not smaller than the resistance of the semiconductor discharge unit when the semiconductor discharge unit is not broken down, and the range is 10-100 KΩ; the breakdown voltage of the semiconductor discharge tube 202 ranges from 50V to 100V; the withstand voltage of the second resistor 203 is not less than 100V, and the resistance range is 10-100 omega; TVS204 is a bidirectional TVS tube, the breakdown voltage range is 10-13V, the reverse current is not less than 100mA, and the response time is not more than 50ns; the voltage withstand requirement of the high-voltage IGBT205 is the same as that of the resistor 201, the response time range is 10-100 ns, and the current allowed to pass through in the on state is not less than 10A; the voltage stabilizing range of the voltage stabilizing tube 206 is 15-30V; the voltage-withstanding range of the high-voltage diode 207 corresponds to the resistor 201, and the on-current is not less than 100mA.
In one embodiment of the present invention, the discharge electrodes of the discharge cells are tungsten, cu is added to the gaps between the electrodes 2 O semiconductor ceramic glaze; the first resistor 201 is a 5KV high-voltage resistance resistor with a resistance value of 30KΩ; the breakdown voltage of the semiconductor discharge tube 202 is 58-77V, and the response time is less than 50ns; the voltage resistance of the second resistor 203 is larger than 200VThe value range is 50Ω; the breakdown voltage of the TVS204 ranges from 11 to 12V, and the response time is less than 1ns; the withstand voltage value of the high-voltage IGBT205 is 4000V, the response time range is 55ns, and the current allowed to pass through in the on state is 30A; the voltage stabilizing value of the voltage stabilizing tube 206 is 20V; the high voltage diode 207 is voltage-resistant to 6KV and has a conduction current of 200mA.
In a more specific embodiment of the present invention, P0640LB is selected for the semiconductor discharge tube 202; the TVS204 is a bi-directional TVS tube P1.5KE13CA; the high-voltage IGBT205 selects IXGF30N4000; the high voltage diode 207 is 2CL2FE.
The working process of the system for realizing the multi-path discharge of the semiconductor surface is as follows: when the pulse high voltage is input, all discharge units are in a non-breakdown conduction state and present a high-resistance state; the impedance feedback control unit presents a low-resistance state; at this time, the low-resistance state of the first impedance feedback regulation unit 105 shields the subsequent elements including the second discharge unit 102, including the discharge unit and the impedance feedback regulation unit; at this time, the first discharge unit 101 will mainly receive an input high voltage; when the first discharging unit 101 breaks down, the first impedance feedback control unit 105 presents a high-resistance state, and at this time, the second discharging unit 102 will mainly bear the input high voltage, so as to reach a breakdown condition; and so on, with the assistance of each impedance feedback regulation unit, each discharge unit sequentially reaches a breakdown condition from front to back to be broken down; when all discharge cells are broken down, the overall loop impedance decreases rapidly and the current increases rapidly releasing the power supply input energy.
In the working process of the system for realizing the multi-path discharge of the semiconductor surface, the working process of the impedance feedback regulation unit is as follows:
at the initial moment, the high-voltage IGBT205 is in an off state, at the moment, current flows from the G pole to the E pole through the TVS204, and a forward conduction voltage drop is input to the high-voltage IGBT205, so that the IGBT is conducted; due to the effect of the voltage stabilizing tube 206, the voltage at two ends of the TVS204 is not reduced due to the conduction of the IGBT, so that the IGBT is ensured to be still in a conduction state; therefore, before the semiconductor surface discharge electrode is broken down, the impedance feedback regulation and control unit presents a small impedance state; at this time, the surface discharge electrode of the semiconductor is not broken down yet, so that the impedance is large, the partial pressure is large, and the current is small; when the surface discharge electrode of the semiconductor breaks down, the current increases rapidly, so that the voltage at two ends of the second resistor 203 increases; when the voltage across the second resistor 203 increases to the design value, the semiconductor discharge tube 202 breaks down and turns on, and the impedance thereof rapidly decreases, resulting in a rapid decrease in the voltage across the semiconductor discharge tube 202; the voltage at two ends of the TVS204 also drops synchronously, and a cut-off signal is input to the IGBT; at this time, the impedance feedback regulation unit assumes a large impedance state.
The semiconductor surface multipath discharge system and the method can realize the multiple-electrode breakdown discharge without obviously increasing the breakdown voltage requirement, enlarge the heating area and improve the electric energy utilization rate.
Drawings
FIG. 1 is a schematic diagram of a system for multiple discharge of a semiconductor surface;
fig. 2 is a schematic diagram of an impedance feedback control unit.
Detailed Description
In order to achieve the above purpose, the invention provides a semiconductor surface multipath discharge system and method, which is technically characterized in that by designing a matched impedance regulating circuit, the impedance characteristic of the system in the discharge process is actively regulated, the sequential breakdown among a plurality of discharge electrodes is realized, and finally the series discharge is realized.
Fig. 1 shows a system structure for realizing multiplex discharge of a semiconductor surface, which is composed of a plurality of discharge units 101, 102, 103, 104 and corresponding impedance control units 105, 106, 107. The plurality of discharge cells 101, 102, 103, 104 are connected in series, the positive electrode of the first discharge cell 101 is connected to the high voltage end of the input voltage, and the negative electrode of the first discharge cell 101 is connected to the positive electrode of the second discharge cell 102. By doing so, the last discharge cell (104 in the figure) is connected to the low voltage terminal of the input voltage. The connection points of the two discharge units are respectively connected with the low voltage of the input voltage through impedance feedback regulation and control units (105, 106 and 107). The connection point of the first discharging unit 101 and the second discharging unit 102 is connected to the low voltage end of the input voltage through the first impedance feedback regulation unit 105, the connection point of the second discharging unit 102 and the third discharging unit 103 is connected to the low voltage end of the input voltage through the second impedance feedback regulation unit 106, and so on.
In fig. 1, only four discharge cells are shown, and in application, the number of discharge cells can be set according to actual requirements, and the connection mode is as described above.
As shown in fig. 2, the impedance feedback control unit is composed of a first resistor 201, a semiconductor discharge tube 202, a second resistor 203, a bidirectional transient diode (TVS) 204, a high voltage Insulated Gate Bipolar Transistor (IGBT) 205, a voltage regulator 206, and a high voltage diode 207. The negative electrode of the voltage stabilizing tube 206 is connected with the discharge units connected in series, namely, connected to the connection point of the two discharge units; the collector (C-pole) of the high-voltage IGBT205 is connected to the positive pole of the regulator tube 206; the first resistor 201 is connected between the negative electrode of the regulator tube 206 and the gate (G-pole) of the high-voltage IGBT 205; TVS204 is connected in parallel between the G pole and the emitter (E pole). One end of the second resistor 203 is connected to the E pole, the other end is connected to the positive end of the high voltage diode 207, and the negative end of the high voltage diode 207 is connected to the low voltage end of the input voltage as the low voltage end of the whole impedance feedback regulation unit. The semiconductor discharge tube 202 is connected between the positive terminal and the G pole of the high voltage diode 207.
In the embodiment of the invention, the discharge electrodes of the discharge units (101, 102, 103, 104) can be bronze, stainless steel, platinum or tungsten, and the gaps between the electrodes are added with semiconductor auxiliary ignition material such as Cu 2 O semiconductor ceramic glaze. The first resistor 201 should be a high voltage resistance, the voltage resistance must be higher than the high voltage input by the power supply, and the resistance should be not less than the resistance when the semiconductor discharge unit is not broken down, and the range is 10-100 kΩ, preferably 50kΩ. The semiconductor discharge tube 202 has a breakdown voltage in the range of 50 to 100V, preferably 50V, and a response time of less than 50ns. The second resistor 203 has a withstand voltage of not less than 100V and a resistance value in the range of 10 to 100. OMEGA, preferably 50. OMEGA. TVS204 is a bidirectional TVS tube, the breakdown voltage range is 10-13V, the reverse current is not less than 100mA, and the response time is not more than 50ns. The voltage withstand requirement of the high-voltage IGBT205 is the same as that of the resistor 201, the response time ranges from 10 to 100ns, and the current allowed to pass in the on state is not less than 10A. The voltage stabilizing range of the voltage stabilizing tube 206 is 15 to 30V, preferably 20V. The voltage-withstanding range of the high-voltage diode 207 is the same as that of the resistor 201, and the on-current is not less than 100mA.
In one embodiment of the invention, the discharge electrodes of the discharge cells (101, 102, 103, 104) are tungsten, cu is added to the gaps between the electrodes 2 O semiconductor ceramic glaze. The first resistor 201 is a 5KV high-voltage resistance resistor with a resistance value of 30KΩ. The semiconductor discharge tube 202 adopts P0640LB, the breakdown voltage is 58-77V, and the response time is less than 50ns. The second resistor 203 has a withstand voltage of more than 200V and a resistance range of 50Ω. TVS204 is a bi-directional TVS tube P1.5KE13CA with a breakdown voltage in the range of 11-12V and a response time of less than 1ns. The high-voltage IGBT205 selects IXGF30N4000, the withstand voltage is 4000V, the response time range is 55ns, and the current allowed to pass through in the on state is 30A. The voltage stabilizing value of the voltage stabilizing tube 206 is 20V. The high-voltage diode 207 is 2CL2FE, has a withstand voltage of 6KV and has a conduction current of 200mA. When a high-voltage pulse meeting a certain condition is input, the breakdown discharge can be realized by the plurality of discharge units in the invention.
Referring to fig. 2, the impedance feedback control unit operates as follows: at the initial moment, the high-voltage IGBT205 is in an off state, and at the moment, current flows from the G pole to the E pole through the TVS204, and a forward conduction voltage drop is input to the high-voltage IGBT205, so that the IGBT is conducted. Due to the voltage stabilizing tube 206, the voltage across the TVS204 is not reduced by the IGBT being turned on, ensuring that the IGBT is still in a turned-on state. Therefore, the impedance feedback control unit presents a small impedance state before the semiconductor surface discharge electrode is not broken down. At this time, the surface discharge electrode of the semiconductor is not broken down yet, so that the impedance is large, the partial pressure is large, and the current is small. When the semiconductor surface discharge electrode breaks down, the current increases rapidly, resulting in a voltage increase across the second resistor 203. When the voltage across the second resistor 203 increases to a design value, the semiconductor discharge tube 202 breaks down and turns on, and its resistance rapidly decreases, resulting in a rapid decrease in the voltage across the semiconductor discharge tube 202. The voltage across TVS204 also drops synchronously, inputting a turn-off signal to the IGBT. At this time, the impedance feedback regulation unit assumes a large impedance state. Therefore, the impedance feedback regulation unit realizes the following functions: before the surface discharge electrode of the upper-stage semiconductor connected with the surface discharge electrode is not broken down, the surface discharge electrode presents a low-resistance state; and quickly changes into a high-resistance state after breakdown.
The working process of the system for realizing the multi-path discharge of the semiconductor surface is as follows: when the input pulse is high voltage, all discharge units are in a non-breakdown conduction state and show a high resistance state. The impedance feedback control unit exhibits a low resistance state. Referring to fig. 1, at this time, the low-resistance state of the first impedance feedback regulation unit 105 shields the subsequent elements (including the discharge unit and the impedance feedback regulation unit) including the second discharge unit 102. At this time, the first discharge unit 101 will mainly receive the input high voltage. When the first discharging unit 101 breaks down, the first impedance feedback control unit 105 presents a high-resistance state, and at this time, the second discharging unit 102 will mainly bear the input high voltage, so as to reach the breakdown condition. And the like, with the assistance of each impedance feedback regulation and control unit, each discharge unit sequentially reaches a breakdown condition from front to back to be broken down. When all discharge cells are broken down, the overall loop impedance decreases rapidly and the current increases rapidly releasing the power supply input energy.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
In one embodiment of the invention, the discharge electrodes of the discharge cells (101, 102, 103, 104) are tungsten, cu is added to the gaps between the electrodes 2 O semiconductor ceramic glaze. The first resistor 201 should be a high voltage resistance resistor of 5KV and a resistance value of 30kΩ. The semiconductor discharge tube 202 adopts P0640LB, the breakdown voltage is 58-77V, and the response time is less than 100ns. The second resistor 203 has a withstand voltage of more than 200V and a resistance range of 50Ω. The TVS204 is a bi-directional TVS tube P1.5KE13CA. The high-voltage IGBT205 is IXGF30N4000. The voltage stabilizing tube 206 is 1N4746A with a voltage stabilizing value of 18V. The high-voltage diode 207 is selected from 2CL2FE, has a withstand voltage of 6KV and has a conduction current of 200mA.
Claims (7)
1. A system for realizing multi-path discharge on the surface of a semiconductor comprises a plurality of discharge units and corresponding impedance regulation units; the plurality of discharge units are connected in series, the positive electrode of the first discharge unit is connected with the high-voltage end of the input voltage, and the negative electrode of the first discharge unit is connected with the positive electrode of the second discharge unit; the negative electrode of the last discharge unit is connected with the low-voltage end of the input voltage by the push; among the plurality of discharge cells, a connection point between two discharge cells connected to each other is connected to a low voltage end of an input voltage through an impedance feedback regulation unit: the connection point of the first discharging unit and the second discharging unit is connected with the low-voltage end of the input voltage through the first impedance feedback regulation unit, the connection point of the second discharging unit and the third discharging unit is connected with the low-voltage end of the input voltage through the second impedance feedback regulation unit, and the like until the last discharging unit; it is characterized in that the method comprises the steps of,
the impedance feedback regulation and control unit consists of a first resistor (201), a semiconductor discharge tube (202), a second resistor (203), a bidirectional transient diode TVS (204), a high-voltage insulated gate bipolar transistor IGBT (205), a voltage stabilizing tube (206) and a high-voltage diode (207); the negative electrode of the voltage stabilizing tube (206) is connected with the discharge units connected in series, namely connected to the connection point of the two discharge units; the collector C electrode of the high-voltage insulated gate bipolar transistor IGBT (205) is connected with the positive electrode of the voltage stabilizing tube (206); the first resistor (201) is connected between the negative electrode of the voltage stabilizing tube (206) and the gate G electrode of the high-voltage insulated gate bipolar transistor (205); the TVS (204) is connected in parallel between the G pole and the emitter E pole; one end of the second resistor (203) is connected with the E pole, the other end of the second resistor is connected to the positive end of the high-voltage diode (207), and the negative end of the high-voltage diode (207) is used as the low-voltage end of the whole impedance feedback regulation unit to be connected with the low-voltage end of the input voltage; a semiconductor discharge tube (202) is connected between the positive terminal of the high-voltage diode (207) and the G-pole.
2. The system for achieving multiple discharge of a semiconductor surface according to claim 1, comprising four discharge units and three impedance feedback regulation units.
3. The system for achieving multiple discharge of a semiconductor surface as defined in claim 1, wherein the discharge electrodes of the discharge cells are selected from bronze, stainless steel, platinum or tungsten, and a semiconductor auxiliary ignition material is added to the gaps between the electrodes; the first resistor (201) is a high-voltage resistance, the voltage resistance is higher than the high voltage input by a power supply, and the resistance is not smaller than the resistance when the semiconductor discharge unit is not broken down, and the range is 10-100 KΩ; the breakdown voltage of the semiconductor discharge tube (202) ranges from 50V to 100V; the withstand voltage of the second resistor (203) is not less than 100V, and the resistance range is 10-100 omega; TVS (204) is a bidirectional TVS tube, the breakdown voltage range is 10-13V, the reverse current is not less than 100mA, and the response time is not more than 50ns; the withstand voltage requirement of the high-voltage insulated gate bipolar transistor IGBT (205) is the same as that of the first resistor (201), the response time range is 10-100 ns, and the current allowed to pass through in the on state is not less than 10A; the voltage stabilizing range of the voltage stabilizing tube (206) is 15-30V; the voltage-withstanding range of the high-voltage diode (207) is equivalent to that of the first resistor (201), and the on-current is not less than 100mA.
4. The system for achieving multiple discharge of semiconductor surface as claimed in claim 3, wherein the discharge electrodes of the discharge cells are tungsten, and Cu is added to the gaps between the electrodes 2 O semiconductor ceramic glaze; the first resistor (201) is a 5KV high-voltage resistance resistor, and the resistance value is 30KΩ; the breakdown voltage of the semiconductor discharge tube (202) is 58-77V, and the response time is less than 50ns; the withstand voltage of the second resistor (203) is more than 200V, and the resistance range is 50Ω; the breakdown voltage of the TVS (204) ranges from 11 to 12V, and the response time is less than 1ns; the withstand voltage value of the high-voltage insulated gate bipolar transistor IGBT (205) is 4000V, the response time range is 55ns, and the current allowed to pass through in the on state is 30A; the voltage stabilizing value of the voltage stabilizing tube (206) is 20V; the high-voltage diode (207) is withstand voltage of 6KV and the conducting current is 200mA.
5. The system for realizing multiple discharge on a semiconductor surface according to claim 4, wherein the semiconductor discharge tube (202) is P0640LB; the TVS (204) is a bidirectional TVS tube P1.5KE13CA; the IGBT (205) of the high-voltage insulated gate bipolar transistor is selected from IXGF30N4000; the high voltage diode (207) is 2CL2FE.
6. A method of implementing a system for achieving multiple discharges of a semiconductor surface as claimed in any one of claims 1 to 5, the method steps comprising: when the pulse high voltage is input, all discharge units are in a non-breakdown conduction state and present a high-resistance state; the impedance feedback control unit presents a low-resistance state; at this time, the low-resistance state of the first impedance feedback regulation unit (105) shields the subsequent elements including the second discharge unit (102), including the discharge unit and the impedance feedback regulation unit; at this time, the first discharge unit (101) will mainly withstand the input high voltage; when the first discharging unit (101) breaks down, the first impedance feedback regulation unit (105) presents a high-impedance state, and at the moment, the second discharging unit (102) mainly bears input high voltage to reach a breakdown condition; and so on, with the assistance of each impedance feedback regulation unit, each discharge unit sequentially reaches a breakdown condition from front to back to be broken down; when all discharge cells are broken down, the overall loop impedance decreases rapidly and the current increases rapidly releasing the power supply input energy.
7. The method of claim 6, wherein the impedance feedback conditioning unit operates as follows;
at the initial moment, the high-voltage insulated gate bipolar transistor IGBT (205) is in an off state, at the moment, current flows from the G pole to the E pole through the TVS (204), and a forward conduction voltage drop is input to the high-voltage insulated gate bipolar transistor IGBT (205) so that the IGBT is conducted; due to the action of the voltage stabilizing tube (206), the voltage at two ends of the TVS (204) is not reduced due to the conduction of the IGBT, so that the IGBT is still in a conduction state; therefore, before the semiconductor surface discharge electrode is broken down, the impedance feedback regulation and control unit presents a small impedance state; at this time, the surface discharge electrode of the semiconductor is not broken down yet, so that the impedance is large, the partial pressure is large, and the current is small; when the surface discharge electrode of the semiconductor breaks down, the current increases rapidly, so that the voltage at two ends of the second resistor (203) increases; when the voltage across the second resistor (203) increases to a design value, the semiconductor discharge tube (202) breaks down and turns on, and the impedance of the semiconductor discharge tube rapidly decreases, so that the voltage across the semiconductor discharge tube (202) rapidly decreases; the voltage at two ends of the TVS (204) is synchronously reduced, and a cut-off signal is input to the IGBT; at this time, the impedance feedback regulation unit assumes a large impedance state.
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| CN110933832A (en) * | 2019-07-16 | 2020-03-27 | 中国人民解放军空军工程大学 | Single power supply driven array type plasma synthetic jet flow control device and flow control method |
| CN110913552B (en) * | 2019-11-20 | 2022-04-19 | 中国人民解放军空军工程大学 | Plasma synthetic jet actuator used under wide air pressure condition |
| CN113251437B (en) * | 2021-06-30 | 2021-09-07 | 国网江苏省电力有限公司电力科学研究院 | Single-power-supply multi-electrode arc ignition device and method |
| CN113903498B (en) * | 2021-08-31 | 2022-08-26 | 南京航空航天大学 | Multi-channel discharge machining electrode based on carbon fiber material and using method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202031A (en) * | 1978-11-01 | 1980-05-06 | General Electric Company | Static inverter employing an assymetrically energized inductor |
| CN1671049A (en) * | 2004-03-19 | 2005-09-21 | 日产自动车株式会社 | Drive circuit for voltage driven type semiconductor element |
| US10032609B1 (en) * | 2013-12-18 | 2018-07-24 | Surfx Technologies Llc | Low temperature atmospheric pressure plasma applications |
| CN108564976A (en) * | 2018-04-02 | 2018-09-21 | 睿力集成电路有限公司 | The control circuit of semiconductor memory function module |
| CN108761246A (en) * | 2018-06-28 | 2018-11-06 | 中国人民解放军空军工程大学 | A kind of polymer matrix dielectric barrier discharge plasma driver ageing state observation circuit and monitoring method |
-
2018
- 2018-12-21 CN CN201811628783.2A patent/CN109802662B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202031A (en) * | 1978-11-01 | 1980-05-06 | General Electric Company | Static inverter employing an assymetrically energized inductor |
| CN1671049A (en) * | 2004-03-19 | 2005-09-21 | 日产自动车株式会社 | Drive circuit for voltage driven type semiconductor element |
| US10032609B1 (en) * | 2013-12-18 | 2018-07-24 | Surfx Technologies Llc | Low temperature atmospheric pressure plasma applications |
| CN108564976A (en) * | 2018-04-02 | 2018-09-21 | 睿力集成电路有限公司 | The control circuit of semiconductor memory function module |
| CN108761246A (en) * | 2018-06-28 | 2018-11-06 | 中国人民解放军空军工程大学 | A kind of polymer matrix dielectric barrier discharge plasma driver ageing state observation circuit and monitoring method |
Non-Patent Citations (3)
| Title |
|---|
| Diffusion theory of spin injection into organic polymers;Ren JF等;《Journal of Physics: Condensed Matter》;20051231;全文 * |
| 等离子体流动控制与点火助燃研究进展;吴云等;《万方平台》;20140902;全文 * |
| 锯齿形等离子体激励器纳秒脉冲放电及红外辐射温度特性;赵光银等;《万方平台》;20140902;全文 * |
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