CN109802662A - A kind of system and method for realizing the electric discharge of semiconductor surface multichannel - Google Patents
A kind of system and method for realizing the electric discharge of semiconductor surface multichannel Download PDFInfo
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- CN109802662A CN109802662A CN201811628783.2A CN201811628783A CN109802662A CN 109802662 A CN109802662 A CN 109802662A CN 201811628783 A CN201811628783 A CN 201811628783A CN 109802662 A CN109802662 A CN 109802662A
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Abstract
A kind of system for realizing the electric discharge of semiconductor surface multichannel is disclosed, is made of multiple discharge cells and corresponding impedance regulation unit；Multiple discharge cells are connected in series, and the anode of the first discharge cell is connected with the high-voltage end of input voltage, and the cathode of the first discharge cell is connected with the anode of the second discharge cell；And so on, the cathode of the last one discharge cell is then connected with the low-pressure end of input voltage；In multiple discharge cells, the tie point between two discharge cells being connected to each other regulates and controls unit by Impedance feedback and is connected with the low-pressure end of input voltage.Also disclose the course of work of the system.Semiconductor surface multichannel discharge system of the invention and method can realize multi-electrode disruptive discharge, expand heating region, improve utilization rate of electrical under the premise of not dramatically increasing breakdown voltage requirement.
Description
Technical field
The present invention relates to plasma techniques, and in particular to a kind of to realize that semiconductor surface multichannel is discharged using feed circuit
System and method.
Background technique
Under the altitude environment of high-altitude, gas temperature reduction, air pressure reduction, fuel atomization effect deteriorate, these unfavorable factors pair
Ignition system proposes requirements at the higher level.Research, which has shown that, can effectively improve ignition energy using multichannel igniting, increases igniting
Region enhances ignition ability of the sparking plug under the extreme conditions such as low-pressure low-temperature.The ignition electric nozzle master that aero-engine uses at present
There are electrion sparking plug, semiconductor discharge plug.The flash-over characteristic of both types sparking plug all has the characteristics that apparent negative impedance, leads
Cause cannot achieve multipoint-parallel electric discharge.By the combination of cascade, although multichannel discharge igniting may be implemented, will increase a little
Thermoelectricity pressure.Thus increase ignition system high voltage protection demand, reduce system reliability, therefore the reality in true aero-engine
It is limited with being worth.Early period by research, based on the thought of impedance regulation, in patent " multichannel arc under single supply atmospheric pressure
Light discharge plasma generation device " multichannel charging method is proposed, under the premise of not dramatically increasing ignition voltage, effectively solve
Determined air surface discharge plug multichannel electric discharge problem.But the breakdown characteristics due to semiconductor discharge plug and air surface discharge plug are complete
Complete different, before electrode gap breakdown, the resistance between semiconductor discharge plug electrode gap is generally several kilo-ohms, therefore cannot be as pure
Capacitive reactances processing.Such case leads to existing method not and can solve the multiple spot electric discharge problem of semiconductor discharge plug.Compared to
Air creeping discharge, semiconductor electric discharge is smaller by effects of air pressure, and breakdown voltage is lower, therefore the multichannel for solving semiconductor discharge plug is put
Electric problem seems even more important.
Summary of the invention
In view of this, realizing that the multichannel electric discharge of semiconductor discharge plug is asked in order under the premise of not dramatically increasing ignition voltage
Topic regulates and controls thought based on Impedance feedback, and the present invention proposes a kind of system for realizing the electric discharge of semiconductor surface multichannel, by multiple electric discharges
Unit and corresponding impedance regulation unit composition；Multiple discharge cells are connected in series, anode and the input electricity of the first discharge cell
The high-voltage end of pressure is connected, and the cathode of the first discharge cell is connected with the anode of the second discharge cell；And so on, the last one is put
The cathode of electric unit is then connected with the low-pressure end of input voltage；In multiple discharge cells, two discharge cells being connected to each other
Between tie point unit regulated and controled by Impedance feedback be connected with the low-pressure end of input voltage: the first discharge cell and second discharges
The tie point of unit regulates and controls unit by the first Impedance feedback and is connected with the low-pressure end of input voltage, the second discharge cell and third
The tie point of discharge cell regulates and controls unit by the second Impedance feedback and is connected with the low-pressure end of input voltage, such, until
The last one discharge cell.
In one embodiment of the invention, Impedance feedback regulation unit by first resistor 201, semiconductor discharge tube 202,
Second resistance 203, two-way transient diode TVS 204, high voltage gate dielectric bipolar transistor IGBT 205, voltage-stabiliser tube 206, height
Diode 207 is pressed to form；The cathode of voltage-stabiliser tube 206 is connected with concatenated discharge cell, is attached to the company of two discharge cells
Contact；The pole collector C of high pressure IGBT 205 is connected with the anode of voltage-stabiliser tube 206；First resistor 201 is connected to voltage-stabiliser tube 206
Cathode and high pressure IGBT 205 grid G pole between；TVS 204 is connected in parallel between the pole G and emitter E pole；The one of resistance 203
End is extremely connected with E, and the other end is connected to the anode of high-voltage diode 207, and the negative terminal of high-voltage diode 207 is anti-as entire impedance
The low-pressure end of feedback regulation unit is connected with the low-pressure end of input voltage；Semiconductor discharge tube 202 is connected to high-voltage diode 207
Between anode and the pole G.
In one particular embodiment of the present invention, which includes that four discharge cells and three Impedance feedback regulations are single
Member.
In one embodiment of the invention, the discharge electrode of discharge cell is selected from bronze, stainless steel, platinum or tungsten, electrode
Between gap add breaker-triggered semiconductor ignition material；First resistor 201 selects high pressure resistant resistance, and pressure voltage necessarily is greater than power supply
The high pressure of input, resistance when resistance value does not puncture not less than semiconductor discharge cell, range are 10~100K Ω；Semiconductor is put
202 breakdown voltage range of fulgurite is 50~100V；203 pressure resistance of second resistance is not less than 100V, and Standard resistance range is 10~100 Ω；
TVS 204 is two-way type TVS pipe, and breakdown voltage range is 10~13V, and backward current is not less than 100mA, and the response time is not more than
50ns；The resistance to pressure request of high pressure IGBT 205 is identical as resistance 201, and response time range is 10~100ns, and on state allows
By electric current be not less than 10A；15~30V of voltage stabilized range of voltage-stabiliser tube 206；The pressure-resistant range and resistance of high-voltage diode 207
201 quite, and conducting electric current is not less than 100mA.
In one particular embodiment of the present invention, the discharge electrode of discharge cell is tungsten, the gap addition between electrode
Cu2O semiconductive ceramic glaze；First resistor 201 selects the high-tension resistive of resistance to 5KV, and resistance value is 30K Ω；Semiconductor discharge tube 202
58~77V of breakdown voltage, response time are less than 50ns；203 pressure resistance of second resistance is greater than 200V, and Standard resistance range is 50 Ω；TVS
204 breakdown voltage range is 11~12V, and the response time is less than 1ns；The pressure voltage of high pressure IGBT 205 is 4000V, when response
Between range be 55ns, on state allow by electric current be 30A；The pressure stabilizing value of voltage-stabiliser tube 206 is 20V；High-voltage diode 207
Pressure-resistant 6KV, conducting electric current 200mA.
In of the invention one more specific embodiment, semiconductor discharge tube 202 selects P0640LB；TVS 204 is double
To type TVS pipe P1.5KE13CA；High pressure IGBT 205 selects IXGF30N4000；High-voltage diode 207 selects 2CL2FE.
The course of work of the system of above-mentioned realization semiconductor surface multichannel electric discharge are as follows: when input pulse high pressure, Suo Youfang
Electric unit, which is in, does not puncture on state, shows high-impedance state；Impedance feedback regulation unit shows low resistive state；At this point,
The low resistive state that first Impedance feedback regulates and controls unit 105 will shield the subsequent element including the second discharge cell 102, including
Discharge cell and Impedance feedback regulate and control unit；At this point, the first discharge cell 101 will be primarily subjected to input high pressure；When the first electric discharge
After unit 101 punctures, the first Impedance feedback regulation unit 105 shows high-impedance state, at this point, the second discharge cell 102 will be led
Input high pressure is born, breakdown condition is reached；And so on, under the auxiliary of each Impedance feedback regulation unit, from front to back,
Each discharge cell successively reaches breakdown condition and breakdown；After all discharge cells are breakdown, entire impedance loop is rapid
Reduce, electric current increases sharply to discharge power input energy.
In the course of work of the system of above-mentioned realization semiconductor surface multichannel electric discharge, Impedance feedback regulates and controls the work of unit
Process is as follows:
Initial time, high pressure IGBT 205 are off state, and electric current flows to the pole E from the pole G by TVS 204 at this time, for height
IGBT 205 is pressed to input forward conduction voltage drop, so that IGBT is connected；Due to the effect of voltage-stabiliser tube 206,204 both end voltage of TVS is simultaneously
Do not decline because IGBT is connected, guarantees IGBT still on state；Therefore, before semiconductor surface discharge electrode does not puncture, resistance
Anti feedback regulation unit shows small impedance state；At this point, impedance is larger since semiconductor surface discharge electrode does not puncture also,
Partial pressure is big, and electric current is smaller；After the breakdown of semiconductor surface discharge electrode, electric current increases sharply, and causes 203 both ends of second resistance electric
Pressure increases therewith；When 203 both end voltage of second resistance increases to design value, the breakdown conducting of semiconductor discharge tube 202, impedance
It is reduced rapidly, 202 both end voltage of semiconductor discharge tube is caused to be reduced rapidly；The also synchronous decline of 204 both end voltage of TVS, gives IGBT
Input pick-off signal；At this point, Impedance feedback regulation unit is rendered as big impedance state.
Semiconductor surface multichannel discharge system of the invention and method, can be before not dramatically increasing breakdown voltage and requiring
It puts, realizes multi-electrode disruptive discharge, expand heating region, improve utilization rate of electrical.
Detailed description of the invention
Fig. 1 is the system schematic of semiconductor surface multichannel electric discharge；
Fig. 2 is that Impedance feedback regulates and controls cell schematics.
Specific embodiment
In order to achieve the above objectives, the present invention provides a kind of semiconductor surface multichannel discharge system and method, technical characterstic
It is that the impedance operator of system, realizes multiple electric discharges in active control discharge process by designing matched impedance circuit for regulating and controlling
Successively puncture between electrode, final discharged in series.
Fig. 1 shows the system structure for realizing the electric discharge of semiconductor surface multichannel, the system by multiple discharge cells 101,102,
103,104 and respective impedance regulation unit 105,106,107 form.Multiple discharge cells 101,102,103,104 are connected in series,
The anode of first discharge cell 101 is connected with the high-voltage end of input voltage, and the cathode of the first discharge cell 101 and the second electric discharge are single
The anode of member 102 is connected.And so on, the last one discharge cell (104 in figure) is then connected with the low-pressure end of input voltage.
The tie point of two discharge cells regulates and controls the low pressure phase of unit (105,106,107) and input voltage by Impedance feedback respectively
Even.The tie point of first discharge cell 101 and the second discharge cell 102 regulates and controls unit 105 and input by the first Impedance feedback
The low-pressure end of voltage is connected, and the tie point of the second discharge cell 102 and third discharge cell 103 is regulated and controled by the second Impedance feedback
Unit 106 is connected with the low-pressure end of input voltage, such.
Four discharge cells are only shown in Fig. 1, in the application, discharge cell quantity can be set according to actual needs, are connected
Mode is as described above.
As shown in Fig. 2, Impedance feedback regulate and control unit by first resistor 201, semiconductor discharge tube 202, second resistance 203,
Two-way transient diode (TVS) 204, high voltage gate dielectric bipolar junction transistor (IGBT) 205, voltage-stabiliser tube 206, high-voltage diode
207 compositions.The cathode of voltage-stabiliser tube 206 is connected with concatenated discharge cell, is attached to the tie point of two discharge cells；High pressure
The collector (pole C) of IGBT205 is connected with the anode of voltage-stabiliser tube 206；First resistor 201 be connected to the cathode of voltage-stabiliser tube 206 with
Between the grid (pole G) of high pressure IGBT 205；TVS 204 is connected in parallel between the pole G and emitter (pole E).The one of second resistance 203
End is extremely connected with E, and the other end is connected to the anode of high-voltage diode 207, and the negative terminal of high-voltage diode 207 is anti-as entire impedance
The low-pressure end of feedback regulation unit is connected with the low-pressure end of input voltage.Semiconductor discharge tube 202 is connected to high-voltage diode 207
Between anode and the pole G.
In an embodiment of the present invention, the discharge electrode of discharge cell (101,102,103,104) can be selected bronze, stainless
Breaker-triggered semiconductor ignition material, such as Cu are added in steel, platinum or tungsten, the gap between electrode2O semiconductive ceramic glaze.First resistor 201
High pressure resistant resistance should be selected, pressure voltage necessarily is greater than the high pressure of power input, and resistance value should not have not less than semiconductor discharge cell
Resistance when breakdown, range are 10~100K Ω, preferably 50K Ω.202 breakdown voltage range of semiconductor discharge tube be 50~
100V, preferably 50V, response time are less than 50ns.203 pressure resistance of second resistance is not less than 100V, and Standard resistance range is 10~100 Ω,
It is preferred that 50 Ω.TVS 204 is two-way type TVS pipe, and breakdown voltage range is 10~13V, and backward current is not less than 100mA, response
Time is not more than 50ns.The resistance to pressure request of high pressure IGBT 205 is identical as resistance 201, and response time range is 10~100ns, leads
Logical state allow by electric current not less than 10A.15~30V of voltage stabilized range of voltage-stabiliser tube 206, preferably 20V.High-voltage diode
207 pressure-resistant range is identical as resistance 201, and conducting electric current is not less than 100mA.
In one particular embodiment of the present invention, the discharge electrode of discharge cell (101,102,103,104) is tungsten, electricity
Add Cu in gap between pole2O semiconductive ceramic glaze.First resistor 201 selects the high-tension resistive of resistance to 5KV, and resistance value is 30K Ω.
Semiconductor discharge tube 202 selects P0640LB, 58~77V of breakdown voltage, and the response time is less than 50ns.203 pressure resistance of second resistance
Greater than 200V, Standard resistance range is 50 Ω.TVS 204 is two-way type TVS pipe P1.5KE13CA, and breakdown voltage range is 11~12V,
Response time is less than 1ns.High pressure IGBT 205 selects IXGF30N4000, pressure voltage 4000V, and response time range is
55ns, on state allow by electric current be 30A.The pressure stabilizing value of voltage-stabiliser tube 206 is 20V.High-voltage diode 207 is selected
2CL2FE, pressure-resistant 6KV, conducting electric current 200mA.When the high-voltage pulse that input is met certain condition, multiple in invention are put
Disruptive discharge can be realized in electric unit.
Referring to fig. 2, the course of work of Impedance feedback regulation unit is as follows: initial time, and high pressure IGBT 205 is cut-off shape
State, electric current flows to the pole E from the pole G by TVS 204 at this time, forward conduction voltage drop is inputted for high pressure IGBT 205, so that IGBT is led
It is logical.Due to the effect of voltage-stabiliser tube 206,204 both end voltage of TVS does not decline because IGBT is connected, and guarantees IGBT still in conducting
State.Therefore, before semiconductor surface discharge electrode does not puncture, Impedance feedback regulation unit shows small impedance state.At this point, by
Do not puncture also in semiconductor surface discharge electrode, impedance is larger, and partial pressure is big, and electric current is smaller.When semiconductor surface discharge electrode is hit
After wearing, electric current increases sharply, and 203 both end voltage of second resistance is caused to increase therewith.When 203 both end voltage of second resistance increases to
When design value, the breakdown conducting of semiconductor discharge tube 202, impedance is reduced rapidly, and causes 202 both end voltage of semiconductor discharge tube fast
Speed reduces.The also synchronous decline of 204 both end voltage of TVS, inputs pick-off signal to IGBT.At this point, Impedance feedback regulation unit is presented
For big impedance state.Therefore, the function that Impedance feedback regulation unit is realized are as follows: put in the upper level semiconductor surface being attached thereto
Before electrode does not puncture, low resistive state is showed；Then it is changed into high-impedance state after breakdown rapidly.
The system work process of above-mentioned realization semiconductor surface multichannel electric discharge are as follows: when input pulse high pressure, all electric discharges
Unit, which is in, does not puncture on state, shows high-impedance state.Impedance feedback regulation unit shows low resistive state.Referring to Fig. 1,
At this point, the low resistive state of the first Impedance feedback regulation unit 105 will shield the subsequent element including the second discharge cell 102
(including discharge cell and Impedance feedback regulate and control unit).At this point, the first discharge cell 101 will be primarily subjected to input high pressure.When
After the breakdown of one discharge cell 101, the first Impedance feedback regulation unit 105 shows high-impedance state, at this point, the second discharge cell
102 will be primarily subjected to input high pressure, reach breakdown condition.And so on, under the auxiliary of each Impedance feedback regulation unit, from
Front to back, each discharge cell successively reach breakdown condition and breakdown.After all discharge cells are breakdown, entire circuit resistance
Anti- to be reduced rapidly, electric current increases sharply to discharge power input energy.
Specific embodiment
In one particular embodiment of the present invention, the discharge electrode of discharge cell (101,102,103,104) is tungsten, electricity
Add Cu in gap between pole2O semiconductive ceramic glaze.First resistor 201 should select high pressure resistant resistance, be 5KV, and resistance value is
30KΩ.Semiconductor discharge tube 202 selects P0640LB, 58~77V of breakdown voltage, and the response time is less than 100ns.Second resistance
203 pressure resistances are greater than 200V, and Standard resistance range is 50 Ω.TVS204 is two-way type TVS pipe P1.5KE13CA.High pressure IGBT 205 is selected
IXGF30N4000.Voltage-stabiliser tube 206 selects 1N4746A, and pressure stabilizing value is 18V.The selection 2CL2FE of high-voltage diode 207, pressure resistance
6KV, conducting electric current 200mA.
Claims (8)
1. a kind of system for realizing the electric discharge of semiconductor surface multichannel regulates and controls unit group by multiple discharge cells and corresponding impedance
At；Multiple discharge cells are connected in series, and the anode of the first discharge cell is connected with the high-voltage end of input voltage, the first discharge cell
Cathode be connected with the anode of the second discharge cell；And so on, the cathode of the last one discharge cell then with input voltage
Low-pressure end is connected；In multiple discharge cells, the tie point between two discharge cells being connected to each other passes through Impedance feedback tune
Control unit is connected with the low-pressure end of input voltage: the tie point of the first discharge cell and the second discharge cell is anti-by the first impedance
Feedback regulation unit is connected with the low-pressure end of input voltage, and the tie point of the second discharge cell and third discharge cell passes through the second resistance
Anti feedback regulation unit is connected with the low-pressure end of input voltage, such, until the last one discharge cell.
2. the system for realizing the electric discharge of semiconductor surface multichannel as described in claim 1, wherein Impedance feedback regulation unit is by the
One resistance (201), semiconductor discharge tube (202), second resistance (203), two-way transient diode TVS (204), high voltage gate dielectric
Bipolar transistor IGBT (205), voltage-stabiliser tube (206), high-voltage diode (207) composition；The cathode of voltage-stabiliser tube (206) with connect
Discharge cell be connected, be attached to the tie point of two discharge cells；The pole collector C of high pressure IGBT (205) and voltage-stabiliser tube
(206) anode is connected；First resistor (201) is connected to the cathode of voltage-stabiliser tube (206) and the grid G pole of high pressure IGBT (205)
Between；TVS (204) is connected in parallel between the pole G and emitter E pole；One end of second resistance (203) is extremely connected with E, other end connection
To the anode of high-voltage diode (207), low-pressure end of the negative terminal of high-voltage diode (207) as entire Impedance feedback regulation unit
It is connected with the low-pressure end of input voltage；Semiconductor discharge tube (202) is connected between the anode and the pole G of high-voltage diode (207).
3. the system for realizing the electric discharge of semiconductor surface multichannel as claimed in claim 1 or 2, which includes four discharge cells
Regulate and control unit with three Impedance feedbacks.
4. realizing the system that semiconductor surface multichannel is discharged as claimed in claim 1 or 2, wherein the discharge electrode of discharge cell
Add breaker-triggered semiconductor ignition material in gap between bronze, stainless steel, platinum or tungsten, electrode；First resistor (201) is selected
High pressure resistant resistance, pressure voltage necessarily are greater than the high pressure of power input, when resistance value does not puncture not less than semiconductor discharge cell
Resistance, range are 10~100K Ω；Semiconductor discharge tube (202) breakdown voltage range is 50~100V；Second resistance (203) is resistance to
Pressure is not less than 100V, and Standard resistance range is 10~100 Ω；TVS (204) is two-way type TVS pipe, and breakdown voltage range is 10~13V,
Backward current is not less than 100mA, and the response time is not more than 50ns；The resistance to pressure request of high pressure IGBT (205) and first resistor (201)
Identical, response time range is 10~100ns, on state allow by electric current not less than 10A；Voltage-stabiliser tube (206) it is steady
Press 15~30V of range；Quite, conducting electric current is not less than for the pressure-resistant range of high-voltage diode (207) and first resistor (201)
100mA。
5. realizing the system that semiconductor surface multichannel is discharged as claimed in claim 4, wherein the discharge electrode of discharge cell is
Cu is added in tungsten, the gap between electrode2O semiconductive ceramic glaze；First resistor (201) selects the high-tension resistive of resistance to 5KV, and resistance value is
30KΩ；58~77V of breakdown voltage of semiconductor discharge tube (202), response time are less than 50ns；Second resistance (203) pressure resistance is big
In 200V, Standard resistance range is 50 Ω；The breakdown voltage range of TVS (204) is 11~12V, and the response time is less than 1ns；High pressure
The pressure voltage of IGBT (205) be 4000V, response time range be 55ns, on state allow by electric current be 30A；Pressure stabilizing
The pressure stabilizing value for managing (206) is 20V；High-voltage diode (207) pressure resistance 6KV, conducting electric current 200mA.
6. the system for realizing the electric discharge of semiconductor surface multichannel as claimed in claim 5, wherein semiconductor discharge tube (202) is selected
P0640LB；TVS (204) is two-way type TVS pipe P1.5KE13CA；High pressure IGBT (205) selects IXGF30N4000；Two pole of high pressure
It manages (207) and selects 2CL2FE.
7. the course of work of the system of above-mentioned realization semiconductor surface multichannel electric discharge are as follows: when input pulse high pressure, all electric discharges
Unit, which is in, does not puncture on state, shows high-impedance state；Impedance feedback regulation unit shows low resistive state；At this point, the
The low resistive state that one Impedance feedback regulates and controls unit (105) will shield the subsequent element including the second discharge cell (102), packet
It includes discharge cell and Impedance feedback regulates and controls unit；At this point, the first discharge cell (101) will be primarily subjected to input high pressure；When first
After discharge cell (101) breakdown, the first Impedance feedback regulation unit (105) shows high-impedance state, at this point, the second discharge cell
(102) it will be primarily subjected to input high pressure, reach breakdown condition；And so on, under the auxiliary of each Impedance feedback regulation unit,
From front to back, each discharge cell successively reaches breakdown condition and breakdown；After all discharge cells are breakdown, entire circuit
Impedance is reduced rapidly, and electric current increases sharply to discharge power input energy.
8. realizing the course of work of the system of semiconductor surface multichannel electric discharge as claimed in claim 7, wherein Impedance feedback tune
The course of work for controlling unit is as follows:
Initial time, high pressure IGBT (205) are off state, and electric current flows to the pole E from the pole G by TVS (204) at this time, are high pressure
IGBT (205) inputs forward conduction voltage drop, so that IGBT is connected；Due to the effect of voltage-stabiliser tube (206), TVS (204) both end voltage
Do not decline because IGBT is connected, guarantees IGBT still on state；Therefore, before semiconductor surface discharge electrode does not puncture,
Impedance feedback regulation unit shows small impedance state；At this point, since semiconductor surface discharge electrode does not puncture also, impedance compared with
Greatly, partial pressure is big, and electric current is smaller；After the breakdown of semiconductor surface discharge electrode, electric current increases sharply, and leads to second resistance (203)
Both end voltage increases therewith；When second resistance (203) both end voltage increases to design value, semiconductor discharge tube (202) breakdown
Conducting, impedance are reduced rapidly, and semiconductor discharge tube (202) both end voltage is caused to be reduced rapidly；TVS (204) both end voltage
Synchronous decline inputs pick-off signal to IGBT；At this point, Impedance feedback regulation unit is rendered as big impedance state.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110913552A (en) * | 2019-11-20 | 2020-03-24 | 中国人民解放军空军工程大学 | Plasma synthetic jet actuator used under wide air pressure condition |
| CN110933832A (en) * | 2019-07-16 | 2020-03-27 | 中国人民解放军空军工程大学 | Single power supply driven array type plasma synthetic jet flow control device and flow control method |
| CN113903498A (en) * | 2021-08-31 | 2022-01-07 | 南京航空航天大学 | Multi-channel discharge machining electrode based on carbon fiber material and using method |
| WO2023273680A1 (en) * | 2021-06-30 | 2023-01-05 | 国网江苏省电力有限公司电力科学研究院 | Single-power supply multi-electrode electric arc ignition apparatus and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202031A (en) * | 1978-11-01 | 1980-05-06 | General Electric Company | Static inverter employing an assymetrically energized inductor |
| CN1671049A (en) * | 2004-03-19 | 2005-09-21 | 日产自动车株式会社 | Drive circuit for voltage driven type semiconductor element |
| US10032609B1 (en) * | 2013-12-18 | 2018-07-24 | Surfx Technologies Llc | Low temperature atmospheric pressure plasma applications |
| CN108564976A (en) * | 2018-04-02 | 2018-09-21 | 睿力集成电路有限公司 | The control circuit of semiconductor memory function module |
| CN108761246A (en) * | 2018-06-28 | 2018-11-06 | 中国人民解放军空军工程大学 | A kind of polymer matrix dielectric barrier discharge plasma driver ageing state observation circuit and monitoring method |
-
2018
- 2018-12-21 CN CN201811628783.2A patent/CN109802662B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4202031A (en) * | 1978-11-01 | 1980-05-06 | General Electric Company | Static inverter employing an assymetrically energized inductor |
| CN1671049A (en) * | 2004-03-19 | 2005-09-21 | 日产自动车株式会社 | Drive circuit for voltage driven type semiconductor element |
| US10032609B1 (en) * | 2013-12-18 | 2018-07-24 | Surfx Technologies Llc | Low temperature atmospheric pressure plasma applications |
| CN108564976A (en) * | 2018-04-02 | 2018-09-21 | 睿力集成电路有限公司 | The control circuit of semiconductor memory function module |
| CN108761246A (en) * | 2018-06-28 | 2018-11-06 | 中国人民解放军空军工程大学 | A kind of polymer matrix dielectric barrier discharge plasma driver ageing state observation circuit and monitoring method |
Non-Patent Citations (3)
| Title |
|---|
| REN JF等: "Diffusion theory of spin injection into organic polymers", 《JOURNAL OF PHYSICS: CONDENSED MATTER》 * |
| 吴云等: "等离子体流动控制与点火助燃研究进展", 《万方平台》 * |
| 赵光银等: "锯齿形等离子体激励器纳秒脉冲放电及红外辐射温度特性", 《万方平台》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110933832A (en) * | 2019-07-16 | 2020-03-27 | 中国人民解放军空军工程大学 | Single power supply driven array type plasma synthetic jet flow control device and flow control method |
| CN110913552A (en) * | 2019-11-20 | 2020-03-24 | 中国人民解放军空军工程大学 | Plasma synthetic jet actuator used under wide air pressure condition |
| WO2023273680A1 (en) * | 2021-06-30 | 2023-01-05 | 国网江苏省电力有限公司电力科学研究院 | Single-power supply multi-electrode electric arc ignition apparatus and method |
| CN113903498A (en) * | 2021-08-31 | 2022-01-07 | 南京航空航天大学 | Multi-channel discharge machining electrode based on carbon fiber material and using method |
| CN113903498B (en) * | 2021-08-31 | 2022-08-26 | 南京航空航天大学 | Multi-channel discharge machining electrode based on carbon fiber material and using method |
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