CN109802023A - A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode - Google Patents
A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode Download PDFInfo
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- CN109802023A CN109802023A CN201811465398.0A CN201811465398A CN109802023A CN 109802023 A CN109802023 A CN 109802023A CN 201811465398 A CN201811465398 A CN 201811465398A CN 109802023 A CN109802023 A CN 109802023A
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Abstract
The invention discloses a kind of preparation method of the epitaxial wafer of light emitting diode and epitaxial wafers, belong to light emitting diode manufacturing field.On p-type AlGaN electronic barrier layer depositing Al N layers by way of magnetron sputtering, AlN layers of growth quality preferably can preferably stop the defects of p-type AlGaN electronic barrier layer, it avoids the defects of p-type AlGaN electronic barrier layer from extending in the p-type GaN layer on AlN layer, improves the crystal quality of p-type GaN layer and p-type contact layer.The quality of p-type GaN layer is guaranteed, therefore the thickness of p-type GaN layer and temperature may make to reduce, and the crystal quality of p-type GaN layer can also be guaranteed.The reduction of the thickness of p-type GaN layer correspondingly can reduce the extinction situation of p-type GaN layer, improve the luminous efficiency of light emitting diode, and the reduction of the temperature of p-type GaN layer also can reduce the decomposition situation of In element in InGaN/GaN multiple quantum well layer, it is final to improve shining for light emitting diode.
Description
Technical field
The present invention relates to light emitting diode manufacturing field, in particular to a kind of preparation method of the epitaxial wafer of light emitting diode
And epitaxial wafer.
Background technique
Light emitting diode is a kind of semiconductor diode that electric energy can be converted to luminous energy, have small in size, the service life is long,
The advantages that low in energy consumption, is widely used in automobile signal light, traffic lights, display screen and lighting apparatus at present.Epitaxial wafer
It is the foundation structure for making light emitting diode, the structure of epitaxial wafer includes substrate and the epitaxial layer grown on substrate.Wherein,
The structure of epitaxial layer, which specifically includes that, successively grows buffer layer on substrate, undoped GaN layer, N-type GaN layer, InGaN/
GaN multiple quantum well layer, p-type AlGaN electronic barrier layer, p-type GaN layer and p-type contact layer.
And due to second-rate, the growth P-type GaN layer on p-type AlGaN electronic barrier layer of p-type AlGaN electronic barrier layer
When, it needs the grown in thickness of p-type GaN layer just can guarantee that the p-type grown in p-type GaN layer and p-type GaN layer connects to sufficiently thick
The quality of contact layer, but thickness it is thicker p-type GaN layer extinction it is more serious；And what p-type GaN layer was grown when temperature is higher
Quality is preferable, and higher temperature also results in the decomposition of In element in InGaN/GaN multiple quantum well layer when p-type GaN layer is grown, most
Shining for light emitting diode is influenced eventually.
Summary of the invention
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode and epitaxial wafers, can be improved hair
The luminous efficiency of optical diode.The technical solution is as follows:
The embodiment of the invention provides a kind of preparation method of the epitaxial wafer of light emitting diode, the preparation method includes:
One substrate is provided；
Grown buffer layer over the substrate；
Layer of undoped gan is grown on the buffer layer；
N-type GaN layer is grown in the layer of undoped gan；
InGaN/GaN multiple quantum well layer is grown in the N-type GaN layer；
The growing P-type AlGaN electronic barrier layer on the InGaN/GaN multiple quantum well layer；
The growing AIN layer on the p-type AlGaN electronic barrier layer, described AlN layers is deposited by the way of magnetron sputtering；
The growth P-type GaN layer on the AlN layer；
The growing P-type contact layer in the p-type GaN layer.
Optionally, a length of 30~50s when AlN layers of the sputtering.
Optionally, AlN layers of the sputtering is with a thickness of 10~20nm.
Optionally, AlN layers of the sputter temperature is 600~750 DEG C.
Optionally, the growth thickness of the p-type GaN layer is 10~20nm.
Optionally, the growth temperature of the p-type GaN layer is 900~950 DEG C.
Optionally, the doped chemical in the p-type GaN layer is Mg, and the doping concentration of Mg is 10 in the p-type GaN layer19~
1020cm-3。
Optionally, the growth thickness of the p-type contact layer is 20~30nm.
Optionally, the growth temperature of the p-type contact layer is 720~850 DEG C.
The embodiment of the invention provides a kind of epitaxial wafer of light emitting diode, the epitaxial wafer includes substrate and stacks gradually
Buffer layer over the substrate, layer of undoped gan, N-type GaN layer, InGaN/GaN multiple quantum well layer, the resistance of p-type AlGaN electronics
Barrier, AlN layers, p-type GaN layer and p-type contact layer, the InGaN/GaN multiple quantum well layer include alternately stacked InGaN trap
Layer and GaN barrier layer.
Technical solution provided in an embodiment of the present invention has the benefit that be passed through on p-type AlGaN electronic barrier layer
N layers of the mode depositing Al of magnetron sputtering, AlN layers of growth quality is preferable, can preferably stop in p-type AlGaN electronic barrier layer
Defect, avoid the defects of p-type AlGaN electronic barrier layer from extending in the p-type GaN layer on AlN layer, improve p-type GaN layer and
The crystal quality of p-type contact layer.The quality of p-type GaN layer is guaranteed, therefore may make the thickness of p-type GaN layer and temperature appropriate
Reduce, the crystal quality of p-type GaN layer can also be guaranteed.The reduction of the thickness of p-type GaN layer correspondingly can reduce p-type GaN layer
Extinction situation, improve the luminous efficiency of light emitting diode, and also to can reduce InGaN/GaN more for the reduction of the temperature of p-type GaN layer
The decomposition situation of In element in quantum well layer, it is final to improve shining for light emitting diode.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the preparation method and epitaxial wafer process of a kind of epitaxial wafer of light emitting diode provided in an embodiment of the present invention
Figure；
Fig. 2 is a kind of structural schematic diagram of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention；
Fig. 3 is the preparation method and epitaxial wafer process of the epitaxial wafer of another light emitting diode provided in an embodiment of the present invention
Figure；
Fig. 4 is the structural schematic diagram of the epitaxial wafer of another light emitting diode provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 is the preparation method and epitaxial wafer of a kind of epitaxial wafer of light emitting diode provided in an embodiment of the present invention, such as Fig. 1
Shown, which includes:
S101: a substrate is provided.
S102: grown buffer layer on substrate.
S103: layer of undoped gan is grown on the buffer layer.
S104: N-type GaN layer is grown in layer of undoped gan.
S105: InGaN/GaN multiple quantum well layer is grown in N-type GaN layer.
S106: the growing P-type AlGaN electronic barrier layer on InGaN/GaN multiple quantum well layer.
S107: the growing AIN layer on p-type AlGaN electronic barrier layer, AlN layers are deposited by the way of magnetron sputtering.
S108: the growth P-type GaN layer on AlN layer.
S109: the growing P-type contact layer in p-type GaN layer.
On p-type AlGaN electronic barrier layer depositing Al N layers by way of magnetron sputtering, AlN layers of growth quality is preferable
The defects of p-type AlGaN electronic barrier layer can preferably be stopped, the defects of p-type AlGaN electronic barrier layer is avoided to extend to
In p-type GaN layer on AlN layer, the crystal quality of p-type GaN layer and p-type contact layer is improved.The quality of p-type GaN layer is guaranteed,
Therefore the thickness of p-type GaN layer may make suitably to reduce with temperature, the crystal quality of p-type GaN layer can also be guaranteed.P-type GaN
The reduction of the thickness of layer correspondingly can reduce the extinction situation of p-type GaN layer, improve the luminous efficiency of light emitting diode, and p-type
The reduction of the temperature of GaN layer also can reduce the decomposition situation of In element in InGaN/GaN multiple quantum well layer, final to improve luminous two
Pole pipe shines.
And in the preferable situation of the quality of p-type GaN layer, it can also moderately reduce the life of the p-type contact layer in p-type GaN layer
Long temperature, the crystal quality of entire epitaxial wafer can still be guaranteed at this time, and the reduction of the growth temperature of p-type contact layer can be advantageous
Effective incorporation of Mg in p-type contact layer, so that forming good Ohmic contact between p-type contact layer and P electrode, favorably
In the current expansion for improving P electrode in light emitting diode, the operating voltage of light emitting diode is reduced, guarantees making for light emitting diode
Use the service life.
Fig. 2 is a kind of structural schematic diagram of the epitaxial wafer of light emitting diode provided in an embodiment of the present invention, as shown in Fig. 2,
The structure for executing the step the epitaxial wafer after S109 includes: substrate 1 and the buffer layer being sequentially laminated on substrate 12, does not mix
Miscellaneous GaN layer 3, N-type GaN layer 4, InGaN/GaN multiple quantum well layer 5, p-type AlGaN electronic barrier layer 6, AlN layer 7, p-type GaN layer 8
And p-type contact layer 9, wherein InGaN/GaN multiple quantum well layer 5 includes alternately stacked InGaN well layer 51 and GaN barrier layer 52.
In this epitaxial slice structure, the AlN layer 7 between p-type type AlGaN electronic barrier layer 6 and p-type GaN layer 8 can be played
The effect for stopping defect in p-type type AlGaN electronic barrier layer 6, advantageously ensures that the quality of p-type GaN layer 8 on AlN layer 7, in turn
Improve the luminous efficiency of light emitting diode.
Fig. 3 is the preparation method and epitaxial wafer of the epitaxial wafer of another light emitting diode provided in an embodiment of the present invention, such as
Shown in Fig. 3, which includes:
S201: a substrate is provided.
Wherein, Sapphire Substrate can be used in substrate.
S202: grown buffer layer on substrate.
Step S202 may include successively growing AIN buffer layer and low temperature GaN buffer on substrate.
Wherein, step S202 may include placing the substrate into magnetron sputtering apparatus to form AlN buffer layer.This form growth
The quality of obtained AlN buffer layer is preferable.
Illustratively, temperature when AlN buffer layer sputters can be 600~800 DEG C.In the growth course of AlN buffer layer,
The sputter temperature of AlN buffer layer is that the preferable AlN buffer layer of quality can be obtained in range above, is guaranteed in AlN, and then guarantees to shine
The arrangement quality of diode.
Optionally, pressure when AlN buffer layer sputters can be 4~10mtorr.The sputtering pressure of AlN buffer layer is arranged
It can guarantee that the quality of obtained AlN buffer layer is preferable in range above, and then guarantee the epitaxial layer grown on AlN buffer layer
Quality, the final luminous efficiency for improving light emitting diode.
Optionally, the thickness of AlN buffer layer can be 15~40nm.
Illustratively, before growing N-type GaN layer on AlN buffer layer, substrate is placed on metallo-organic compound chemistry
In gaseous phase deposition MOCVD；It is passed through hydrogen into MOCVD, the heat treatment of 10~15min is carried out to AlN buffer layer.Have that will grow
The substrate of AlN buffer layer is transferred to after MOCVD, first in H2High-temperature heat treatment is carried out to AlN buffer layer under atmosphere, can remove
The partial impurities of AlN buffer-layer surface, guarantee the cleaning of AlN buffer-layer surface, and then guarantee to grow on AlN buffer layer outer
Prolong the quality of layer.
Wherein, the temperature of heat treatment can be 900~1100 DEG C.The heat treatment of AlN buffer layer is carried out under the conditions of this temperature,
The most of impurity that can remove AlN buffer-layer surface, is further ensured that the quality of the epitaxial layer grown on AlN buffer layer.
S203: layer of undoped gan is grown on the buffer layer.
The growth temperature of layer of undoped gan can be 1000~1100 DEG C, and growth pressure can be 100~500Torr.At this
The quality of the layer of undoped gan grown under part is preferable.
Illustratively, the growth thickness of layer of undoped gan can be 1~3 μm.
S204: N-type GaN layer is grown in layer of undoped gan.
Wherein, the growth temperature of N-type GaN layer can be 1000~1200 DEG C, and growth pressure can be 100~500Torr.
N-type GaN layer can carry out Si doping, and the concentration of Si doping can be 1 × 1019~1 × 1021cm-3。
The growth thickness of N-type GaN layer can be 1~5 μm.
S205: InGaN/GaN multiple quantum well layer is grown in N-type GaN layer.
Optionally, in step S205, InGaN/GaN multiple quantum well layer may include the InGaN/GaN volume in 5~11 periods
Sub- well layer.Wherein, the growth temperature of InGaN well layer can be 720~829 DEG C, the growth pressure of InGaN well layer can for 100~
The growth thickness of 500Torr, InGaN well layer can be 2~3nm；The growth temperature of GaN barrier layer can be 850~959 DEG C, GaN barrier layer
Growth pressure can be 100~500Torr, the growth thickness of GaN barrier layer can be 9~20nm.
S206: the growing low temperature p-type GaN layer on InGaN/GaN multiple quantum well layer.
Wherein, the growth temperature of low temperature p-type GaN layer can be 700~800 DEG C, and growth pressure can be 100~600Torr.?
The good low temperature p-type GaN layer of growth quality can be obtained under this condition.
The growth thickness of low temperature p-type GaN layer can be 10~40nm.
The setting of low temperature p-type GaN layer can guarantee that have enough holes to enter InGaN/GaN multiple quantum well layer answers with electronics
It closes, to guarantee the luminous efficiency of light emitting diode.
Doped chemical in low temperature p-type GaN layer can be Mg, and the doping concentration of Mg is 1~2 × 1020cm-3。
S207: the growing P-type AlGaN electronic barrier layer in low temperature p-type GaN layer.
In the present embodiment, the growth temperature of p-type AlGaN electronic barrier layer can be 900~1000 DEG C, and growth pressure can be
100~300Torr.
Optionally, the growth thickness of p-type AlGaN electronic barrier layer can be 20~30nm.
Doped chemical in p-type AlGaN electronic barrier layer can be Mg, and the doping concentration of Mg is less than 1019cm-3.It can guarantee P
The effect and quality of type electronic barrier layer.
The component of Al can be controlled in 10~30% in p-type AlGaN electronic barrier layer.
S208: the growing AIN layer on p-type AlGaN electronic barrier layer, AlN layers are deposited by the way of magnetron sputtering.
Optionally, a length of 30~50s when AlN layers of sputtering.It can be obtained that quality is AlN layers preferable at this time, what is obtained shines
The luminous efficiency of diode is preferable.
Further, AlN layers of sputtering thickness can be 10~20nm.At this time AlN layers itself quality it is preferable, can also be effective
Stop the defect from p-type AlGaN electronic barrier layer, guarantees the quality of p-type GaN layer grown on AlN layer.
Illustratively, AlN layers of sputter temperature can be 600~750 DEG C.It is AlN layers preferable that quality can be obtained at this time, obtain
Light emitting diode luminous efficiency it is preferable.
It optionally, can include Ar, N2、O2Gaseous environment under AlN layers of sputtering sedimentation, be conducive to AlN layers smooth heavy
Product.
AlN layers of sputtering power can be 3KW~5KW.The quality of obtained AlN layer is preferable.
S209: the growth P-type GaN layer on AlN layer.
Optionally, the growth thickness of p-type GaN layer can be 10~20nm.The p-type GaN layer quality obtained at this time is preferable, can mention
For enough holes, extinction effect is also more slight, is conducive to the luminous efficiency for improving light emitting diode.
Illustratively, the growth temperature of p-type GaN layer can be 900~950 DEG C.It can grow to obtain the preferable p-type of quality
GaN layer.
The growth pressure of p-type GaN layer can be 300~600torr.It can grow to obtain the preferable p-type GaN layer of quality.
Optionally, the doped chemical in p-type GaN layer is Mg, and the doping concentration of Mg is 10 in p-type GaN layer19~1020cm-3。
The preferable light emitting diode of luminous efficiency can be obtained at this time.
S210: the growing P-type contact layer in p-type GaN layer.
Optionally, the growth thickness of p-type contact layer is 20~30nm.The p-type contact layer quality obtained at this time is preferable, finally
The luminous efficiency of obtained light emitting diode is also preferable.
Illustratively, the growth temperature of p-type contact layer is 720~850 DEG C.The quality of the p-type contact layer obtained at this time compared with
It is good, it is also beneficial to the infiltration of Mg in bottom p-type contact layer, the luminous efficiency of finally obtained light emitting diode is also preferable.
The growth pressure of p-type contact layer can be 100~600Torr.The quality of the p-type contact layer obtained at this time is preferable.
Illustratively, after executing the step S210, this preparation method further include to epitaxial wafer under nitrogen atmosphere into
Row annealing, wherein annealing temperature is 650~850 DEG C, and anneal duration is 5~15min.
Fig. 4 is the structural schematic diagram of the epitaxial wafer of another light emitting diode provided in an embodiment of the present invention, has executed step
The structure of epitaxial wafer after rapid S210 is as shown in figure 4, as shown in figure 4, the structure of the epitaxial wafer after executing the step S109
It include: substrate 1 and the buffer layer being sequentially laminated on substrate 12, layer of undoped gan 3, N-type GaN layer 4, InGaN/GaN volume
Sub- well layer 5, low temperature p-type GaN layer 10, p-type AlGaN electronic barrier layer 6, AlN layer 7, p-type GaN layer 8 and p-type contact layer 9, wherein
InGaN/GaN multiple quantum well layer 5 includes alternately stacked InGaN well layer 51 and GaN barrier layer 52.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of the epitaxial wafer of light emitting diode, which is characterized in that the preparation method includes:
One substrate is provided；
Grown buffer layer over the substrate；
Layer of undoped gan is grown on the buffer layer；
N-type GaN layer is grown in the layer of undoped gan；
InGaN/GaN multiple quantum well layer is grown in the N-type GaN layer；
The growing P-type AlGaN electronic barrier layer on the InGaN/GaN multiple quantum well layer；
The growing AIN layer on the p-type AlGaN electronic barrier layer, described AlN layers is deposited by the way of magnetron sputtering；
The growth P-type GaN layer on the AlN layer；
The growing P-type contact layer in the p-type GaN layer.
2. preparation method according to claim 1, which is characterized in that a length of 30~50s when AlN layers of the sputtering.
3. preparation method according to claim 1, which is characterized in that AlN layers of the sputtering is with a thickness of 10~20nm.
4. described in any item preparation methods according to claim 1~3, which is characterized in that AlN layers of the sputter temperature is
600~750 DEG C.
5. described in any item preparation methods according to claim 1~3, which is characterized in that the growth thickness of the p-type GaN layer
For 10~20nm.
6. described in any item preparation methods according to claim 1~3, which is characterized in that the growth temperature of the p-type GaN layer
It is 900~950 DEG C.
7. described in any item preparation methods according to claim 1~3, which is characterized in that the doping member in the p-type GaN layer
Element is Mg, and the doping concentration of Mg is 10 in the p-type GaN layer19~1020cm-3。
8. described in any item preparation methods according to claim 1~3, which is characterized in that the growth thickness of the p-type contact layer
For 20~30nm.
9. described in any item preparation methods according to claim 1~3, which is characterized in that the growth temperature of the p-type contact layer
It is 720~850 DEG C.
10. a kind of epitaxial wafer of light emitting diode, which is characterized in that the epitaxial wafer includes substrate and is sequentially laminated on the lining
Buffer layer, layer of undoped gan, N-type GaN layer, InGaN/GaN multiple quantum well layer, p-type AlGaN electronic barrier layer, AlN on bottom
Layer, p-type GaN layer and p-type contact layer, the InGaN/GaN multiple quantum well layer include alternately stacked InGaN well layer and GaN
Barrier layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811465398.0A CN109802023A (en) | 2018-12-03 | 2018-12-03 | A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811465398.0A CN109802023A (en) | 2018-12-03 | 2018-12-03 | A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode |
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| CN109802023A true CN109802023A (en) | 2019-05-24 |
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| CN201811465398.0A Withdrawn CN109802023A (en) | 2018-12-03 | 2018-12-03 | A kind of preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344684A (en) * | 2023-05-29 | 2023-06-27 | 江西兆驰半导体有限公司 | Light-emitting diode preparation method and diode |
-
2018
- 2018-12-03 CN CN201811465398.0A patent/CN109802023A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344684A (en) * | 2023-05-29 | 2023-06-27 | 江西兆驰半导体有限公司 | Light-emitting diode preparation method and diode |
| CN116344684B (en) * | 2023-05-29 | 2023-08-04 | 江西兆驰半导体有限公司 | Light-emitting diode preparation method and diode |
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