CN109801993A - 一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器 - Google Patents

一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器 Download PDF

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CN109801993A
CN109801993A CN201910039087.6A CN201910039087A CN109801993A CN 109801993 A CN109801993 A CN 109801993A CN 201910039087 A CN201910039087 A CN 201910039087A CN 109801993 A CN109801993 A CN 109801993A
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optical detector
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CN109801993B (zh
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詹健龙
宋禹析
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Zhejiang Taoteng Infrared Technology Co Ltd
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Abstract

本发明公开了一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器,所述光探测器的吸收区为p型,所述二类超晶格光探测器的吸收区包括有InAs层和GaSb层,所述GaSb层中凝入有Bi元素,Bi元素将吸收区的能带结构中超晶格价带顶抬升至距离表面态小于3kBT,或者高于表面态。本发明的有益效果是:本发明通过在传统的InAs/GaSb二类超晶格光探测器吸收区的GaSb层中凝入一定量的Bi元素,通过Bi元素使得吸收区中超晶格价带抬升至高于吸收区的表面态,从而使得表面态转变成与吸收区同型的p型,消除表面SRH暗电流,提高探测器的性能。

Description

一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探 测器
技术领域
本发明属于二类超晶格光探测器技术领域,具体涉及一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器。
背景技术
表面态是固体自由表面或固体间接口附近局部性的电子能态。由于固体表面原子结构不同于体内原子结构,使得表面能级既不同于固体体能带,也不同于孤立原子能级。半导体表面态通常位于基本禁带中或禁带边缘附近。当前InAs/GaSb光探测器表面态的费米能级均位于禁带中。常见探测器中的吸收区多为弱p型,这样少数载流子是电子,具有比空穴高很多的迁移率。p型吸收区与上述表面态会形成大量的SRH复合中心,从而导致大表面暗电流,限制探测器的性能。
发明内容
为解决上述技术问题,本发明采用的技术方案是:一种具有强制 p型表面态的InAs/GaSb(Bi)二类超晶格光探测器,所述光探测器的吸收区为p型,所述二类超晶格光探测器的吸收区包括有InAs层和 GaSb层,所述GaSb层中凝入有Bi元素,Bi元素将吸收区的能带结构中超晶格价带顶抬升至距离表面态小于3kBT,或者高于表面态。
GaSb层中Bi元素的含量小于15%。
本发明的有益效果是:本发明通过在传统的InAs/GaSb二类超晶格光探测器吸收区的GaSb层中凝入一定量的Bi元素,通过Bi元素使得吸收区中超晶格价带抬升至高于吸收区的表面态,从而使得表面态转变成与吸收区同型的p型,消除表面SRH暗电流,提高探测器的性能。
附图说明
图1是本发明InAs/GaSb(Bi)二类超晶格光探测器的能带结构示意图。
具体实施方式
现结合附图对本发明作进一步说明。
如图1所示,一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器,所述光探测器的吸收区为p型,所述二类超晶格光探测器的吸收区包括有InAs层和GaSb层,所述GaSb层中凝入有Bi 元素,Bi元素将吸收区的能带结构中超晶格价带顶抬升至距离表面态小于3kBT,或者高于表面态。
GaSb层中Bi元素的含量小于15%。具体结构可以是7ML InAs/10 ML GaSb0.94Bi0.06(ML,原子层),其吸收区能带结构中超晶格价带抬升状态如图1所示。
以上详细描述了本发明的较佳具体实施例,应当理解,本领域的普通技术人员无需创造性劳动就可以根据本发明的构思做出诸多修改和变化,因此,凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案,皆应在由权利要求书所确定的保护范围内。

Claims (2)

1.一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器,所述光探测器的吸收区为p型,所述二类超晶格光探测器的吸收区包括有InAs层和GaSb层,其特征在于,所述GaSb层中凝入有Bi元素,Bi元素将吸收区的能带结构中超晶格价带顶抬升至距离表面态小于3kBT,或者高于表面态。
2.如权利要求1所述的具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器,其特征在于,所述GaSb层中Bi元素的含量小于15%。
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Cited By (1)

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WO2021062589A1 (zh) * 2019-09-30 2021-04-08 嘉兴风云科技有限责任公司 一种能够缩减层厚度的二类超晶格光探测器

Citations (2)

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CN104538457A (zh) * 2015-01-15 2015-04-22 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
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CN104538457A (zh) * 2015-01-15 2015-04-22 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
CN104576805A (zh) * 2015-01-21 2015-04-29 哈尔滨工业大学 一种基于InAs/GaSbⅡ类超晶格材料的短波/中波/长波三色红外探测器

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2021062589A1 (zh) * 2019-09-30 2021-04-08 嘉兴风云科技有限责任公司 一种能够缩减层厚度的二类超晶格光探测器

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