CN109786397A - Back side illumination image sensor and imaging system - Google Patents
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- CN109786397A CN109786397A CN201711104696.2A CN201711104696A CN109786397A CN 109786397 A CN109786397 A CN 109786397A CN 201711104696 A CN201711104696 A CN 201711104696A CN 109786397 A CN109786397 A CN 109786397A
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Abstract
The present invention proposes a kind of back side illumination image sensor and imaging system, photodiode is isolated by the deep trench isolation structure between photodiode, conductive material in deep trench isolation structure is coupled to voltage source by pad, conductive material induces charge in response to being applied to the voltage of conductive material from the voltage source in the semiconductor material of deep trench isolation structure and the interface of semiconductor material, reduce influence of the defect of the interface from deep trench isolation structure and semiconductor material to photodiode, to mitigate photodiode dark current and hot noise, and then improve image quality.
Description
Technical field
The present invention relates to a kind of back side illumination image sensor and imaging systems.
Background technique
Imaging sensor has become omnipresent.Imaging sensor is in digital still camera, cellular phone, monitoring camera
It is widely used in machine, and medical treatment, automobile and other application.Technology to manufacture imaging sensor continues substantially to improve.It lifts
For example, the demand to higher resolution and more low-power consumption has been promoted the further micromation of these devices and has integrated.
Pixel cross-talk currently limits the performance of semiconductor image sensor device.Theoretically, every in imaging sensor
One pixel is operated as distinct photons detector.In other words, the electrons content in a pixel does not overflow adjacent
Pixel (or any other pixel in device).In true picture sensor, situation is really not so.Electric signal can be from a picture
Element is moved to another pixel.This crosstalk can increase the number of hot noise, reduce image sensor sensitivity, and lead to colour signal
Mixing.Unfortunately, many solutions of crosstalk usually expand the influence of dark current or facilitate dark current.Dark current and string
The combination disturbed can cause apparent image deterioration.
Summary of the invention
The purpose of the present invention is to provide a kind of back side illumination image sensor and imaging systems, reduce picture element flaw, mitigate
Dark current and hot noise improve image quality.
Based on considerations above, one aspect of the present invention provides a kind of back side illumination image sensor comprising: multiple photoelectricity
Diode is located in semiconductor material；The light is isolated in deep trench isolation structure between the photodiode
Electric diode；Pad is located in the semiconductor material and is coupled to voltage source；The wherein deep trench isolation structure packet
Contain: conductive material is coupled to the pad and the voltage source；And dielectric substance, it is located at the deep trench isolation knot
On the side wall of structure and between the semiconductor material and the conductive material.
Preferably, the pad is coupled to external voltage source by external metallization line.
Preferably, the back side illumination image sensor further comprises: the metal below the semiconductor material is mutual
Even layer, the pad are coupled to the internal source voltage of metal interconnecting layer by contact hole.
Preferably, the pad is located on the surface of semiconductor material or in groove.
Preferably, the conductive material is coupled to the pad by metal connecting line.
Preferably, it is electrically isolated between the metal connecting line and the semiconductor material by dielectric layer.
Preferably, the photodiode is n-type doping region, and the voltage source is negative voltage source.
Preferably, the photodiode is P-doped zone domain, and the voltage source is positive voltage source.
Preferably, the conductive material includes at least one of tungsten, copper, aluminium, titanium, polysilicon or any combination thereof.
Preferably, the dielectric substance includes at least one of hafnium oxide, silica, silicon oxynitride, aluminium oxide
Or any combination thereof.
Another aspect of the present invention also provides a kind of imaging system including the back side illumination image sensor.
Back side illumination image sensor and imaging system of the invention, passes through the deep trench isolation between photodiode
Photodiode is isolated in structure, and the conductive material in deep trench isolation structure is coupled to voltage source by pad, and conductive material is rung
Voltage source described in Ying Yucong is applied to the voltage of conductive material and in the interface of deep trench isolation structure and semiconductor material
Charge is induced in semiconductor material, reduces the defect of the interface from deep trench isolation structure and semiconductor material to photoelectricity two
The influence of pole pipe, thus mitigate photodiode dark current and hot noise, and then improve image quality.
Detailed description of the invention
By Figure of description and then it is used to illustrate the specific reality of the certain principles of the present invention together with Figure of description
Mode is applied, other feature possessed by the present invention and advantage will be apparent or more specifically illustrated.
Fig. 1 is the cross-sectional view of back side illumination image sensor of the invention；
Fig. 2 is the enlarged view of the deep trench isolation structure of back side illumination image sensor according to an embodiment of the invention；
Fig. 3 is the enlarged view of the deep trench isolation structure of back side illumination image sensor according to another embodiment of the present invention；
Fig. 4 is the schematic diagram of imaging system according to the present invention.
Specific embodiment
In the following detailed description of the preferred embodiment, reference is constituted to the appended attached drawing of present invention a part.Institute
Attached attached drawing, which has been illustrated by way of example, can be realized specific embodiment.Exemplary embodiment is not intended to
Exhaustive all embodiments according to the present invention.It is appreciated that without departing from the scope of the present invention, can use other
Embodiment can also carry out the modification of structure or logic.Therefore, it is below specific descriptions and it is unrestricted, and this
The range of invention is defined by the claims appended hereto.
Fig. 1 shows one embodiment of back side illumination image sensor 100 of the invention.The back side illumination image sensor 100
Include: multiple photodiodes 111, is located in semiconductor material 101；Deep trench isolation structure is located at the photoelectricity two
The photodiode 111 is isolated between pole pipe 111；Pad 142 is located in the semiconductor material 101 and is coupled to
Voltage source；Wherein the deep trench isolation structure includes: conductive material 113 is coupled to the pad 142 and the voltage
Source；And dielectric substance 115, be located on the side wall of the deep trench isolation structure and between the semiconductor material 101 with
Between the conductive material 115.
Since the conductive material 113 in deep trench isolation structure is coupled to voltage source, conductive material 113 by pad 142
In response to being applied to the voltage of conductive material from voltage source in the interface of deep trench isolation structure and semiconductor material 101
Charge is induced in semiconductor material 101, reduces the defect pair from deep trench isolation structure Yu the interface of semiconductor material 101
The influence of photodiode 111, thus mitigate photodiode 111 dark current and hot noise, and then improve image quality.
Preferably, conductive material 113 is coupled to pad 142, metal connecting line 143 and semiconductor material by metal connecting line 143
It is electrically isolated between material 101 by dielectric layer 144.
Preferably, which further comprises the metal interconnection positioned at 101 lower section of semiconductor material
Layer 140, pad 142 are coupled to the internal source voltage of metal interconnecting layer 140 by contact hole 141.In other unshowned implementations
In example, pad 142 can also be coupled to external voltage source by external metallization line.
In the embodiment shown in fig. 1, pad 142 is located in the groove of semiconductor material 101；In other unshowned realities
It applies in example, pad 142 may be located on the surface of semiconductor material 101.
Fig. 2, Fig. 3 are the amplification view of the deep trench isolation structure of back side illumination image sensor 100 according to the present invention respectively
Figure.
In one embodiment as shown in Figure 2, the photodiode 111 is n-type doping region, and the voltage source is
Negative voltage source, conductive material 113 is in response to being applied to the negative voltage of conductive material from negative voltage source and in deep trench isolation structure
With induce positive charge in the semiconductor material 101 of the interface of semiconductor material 101, reduce from deep trench isolation structure and half
Influence of the defect of the interface of conductor material 101 to photodiode 111, to mitigate the dark current of photodiode 111
And hot noise, and then improve image quality.
In another embodiment as shown in Figure 3, the photodiode 111 is P-doped zone domain, and the voltage source is
Positive voltage source, conductive material 113 is in response to being applied to the positive voltage of conductive material from positive voltage source and in deep trench isolation structure
With induce negative electrical charge in the semiconductor material 101 of the interface of semiconductor material 101, reduce from deep trench isolation structure and half
Influence of the defect of the interface of conductor material 101 to photodiode 111, to mitigate the dark current of photodiode 111
And hot noise, and then improve image quality.
In one embodiment of the invention, dielectric substance 115 may include silica (SiO2)；However, other
In example, dielectric substance 115 may include other oxides, such as: hafnium oxide (HfO2Or HfOx), silicon nitride (Si3N4), nitrogen
Silica (SiOxNy), tantalum oxide (Ta2O5), titanium dioxide (TiO2), zirconium oxide (ZrO2), aluminium oxide (Al2O3), lanthana
(La2O3), praseodymium oxide (Pr2O3), cerium oxide (CeO2), neodymia (Nd2O3), promethium oxide (Pm2O3), samarium oxide (Sm2O3), oxygen
Change europium (Eu2O3), gadolinium oxide (Gd2O3), terbium oxide (Tb2O3), dysprosia (Dy2O3), holimium oxide (Ho2O3), erbium oxide
(Er2O3), thulium oxide (Tm2O3), ytterbium oxide (Yb2O3), luteium oxide (Lu2O3), (Y such as yttrium oxide2O3) etc..In addition, related neck
Domain it will be recognized that teaching according to the present invention, can use above-mentioned metal/semiconductor in dielectric substance 115
And its any stoichiometric combination of oxide/nitride/nitrogen oxides.
Similarly, conductive material 113 may include tungsten；However, conductive material 113 also may include the metal of for example following item:
Copper, gold, palladium, silver, aluminium, indium, lead, nickel, titanium etc. and polysilicon.Those skilled in the relevant art are it will be recognized that above-mentioned metal
(and unlisted other metals) and any stoichiometric combination of polysilicon can be used to form conductive material 113.
Fig. 4 is an example of the imaging system 200 of the imaging sensor 100 comprising Fig. 1.Imaging system 200 includes picture
Pixel array 205, control circuit 221, reading circuit 211 and function logic 215.In an example, pixel array 205 is photoelectricity
Two dimension (2D) array of diode or image sensor pixel (for example, pixel P1, P2 ..., Pn).As described, photodiode
Arrangement is embarked on journey (for example, row R1 to row Ry) and arranging (for example, C1 to Cx) to obtain the image data of personage, place, object etc., institute
It states image data then and can be used for reproducing the 2D image of the personage, place, object etc..
In an example, each imaging sensor photodiode/pixel in pixel array 205 has obtained its figure
After data or image charge, image data is read by reading circuit 211 and is then transferred to function logic 215.It reads
Circuit 211 can be coupled to read image data from multiple photodiodes in pixel array 205.In various examples, read
Circuit 211 may include amplifying circuit, analog/digital conversion (ADC) circuit or other out.Function logic 215 can simply store image
Data or even by apply later image effect (for example, cut out, rotate, removes blood-shot eye illness, adjust brightness, adjust contrast or
It is other) manipulate image data.In an example, reading circuit 211 can once read a line picture number along alignment is read
According to (it is stated that), or such as series read-out or a variety of other technologies of all pixels of complete parallel reading simultaneously can be used (not to say
It is bright) read described image data.
In an example, control circuit 221 is coupled to pixel array 205 to control multiple light in pixel array 205
The operation of electric diode.For example, control circuit 221 can produce the shutter signal for controlling image acquisition.In an example,
The shutter signal is global shutter signal, is used to enable all pixels in pixel array 205 simultaneously individually to obtain
Its corresponding image data is captured during window simultaneously.In another example, the shutter signal is rolling shutter signal, so that
Every a line, each column or each group of pixel are sequentially enabled during continuously acquiring window.In another example, Image Acquisition with
Illuminating effect (such as flash of light) is synchronous.
In an example, imaging system 200 may be included in digital camera, mobile phone, laptop computer etc..In addition,
Imaging system 200 can be coupled to other hardware, for example, processor, memory component, output (USB port, wireless transmitter,
Port HDMI etc.), illumination/flash of light, electricity input (keyboard, touch display, Trackpad, mouse, microphone etc.) and/or aobvious
Show device.Other hardware can transfer the instructions to imaging system 200, from imaging system 200 extract image data or manipulation by
The image data supplied as system 200.
Back side illumination image sensor and imaging system of the invention, passes through the deep trench isolation between photodiode
Photodiode is isolated in structure, and the conductive material in deep trench isolation structure is coupled to voltage source by pad, and conductive material is rung
Voltage source described in Ying Yucong is applied to the voltage of conductive material and in the interface of deep trench isolation structure and semiconductor material
Charge is induced in semiconductor material, reduces the defect of the interface from deep trench isolation structure and semiconductor material to photoelectricity two
The influence of pole pipe, thus mitigate photodiode dark current and hot noise, and then improve image quality.
It is obvious to a person skilled in the art that invention is not limited to the details of the above exemplary embodiments, Er Qie
In the case where without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
How from the point of view of, the present embodiments are to be considered as illustrative and not restrictive.In addition, it will be evident that one word of " comprising " not
Exclude other elements and steps, and wording "one" be not excluded for plural number.The multiple element stated in device claim can also
To be implemented by one element.The first, the second equal words are used to indicate names, and are not indicated any particular order.
Claims (11)
1. a kind of back side illumination image sensor, characterized in that it comprises:
Multiple photodiodes are located in semiconductor material；
The photodiode is isolated in deep trench isolation structure between the photodiode；
Pad is located in the semiconductor material and is coupled to voltage source；
Wherein the deep trench isolation structure includes:
Conductive material is coupled to the pad and the voltage source；And
Dielectric substance is located on the side wall of the deep trench isolation structure and between the semiconductor material and the conduction
Between material.
2. back side illumination image sensor according to claim 1, which is characterized in that the pad passes through external metallization line
It is coupled to external voltage source.
3. back side illumination image sensor according to claim 1, which is characterized in that further comprising: being located at described half
Metal interconnecting layer below conductor material, the pad are coupled to the internal source voltage of metal interconnecting layer by contact hole.
4. back side illumination image sensor according to claim 1, which is characterized in that the pad is located at semiconductor material
On surface or in groove.
5. back side illumination image sensor according to claim 1, which is characterized in that the conductive material passes through metal connecting line
It is coupled to the pad.
6. back side illumination image sensor according to claim 5, which is characterized in that the metal connecting line and the semiconductor
It is electrically isolated between material by dielectric layer.
7. back side illumination image sensor according to claim 1, which is characterized in that the photodiode is n-type doping
Region, the voltage source are negative voltage source.
8. back side illumination image sensor according to claim 1, which is characterized in that the photodiode is p-type doping
Region, the voltage source are positive voltage source.
9. back side illumination image sensor according to claim 1, which is characterized in that the conductive material include tungsten, copper,
At least one of aluminium, titanium, polysilicon or any combination thereof.
10. back side illumination image sensor according to claim 1, which is characterized in that the dielectric substance includes oxidation
At least one of hafnium, silica, silicon oxynitride, aluminium oxide or any combination thereof.
11. a kind of imaging system, characterized in that it comprises: such as back side illumination image of any of claims 1-10
Sensor.
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| CN201711104696.2A CN109786397A (en) | 2017-11-10 | 2017-11-10 | Back side illumination image sensor and imaging system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711104696.2A CN109786397A (en) | 2017-11-10 | 2017-11-10 | Back side illumination image sensor and imaging system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112349740A (en) * | 2020-11-05 | 2021-02-09 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor and forming method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112349740A (en) * | 2020-11-05 | 2021-02-09 | 武汉新芯集成电路制造有限公司 | Backside illuminated image sensor and forming method thereof |
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Application publication date: 20190521 |