CN208444839U - Cmos image sensor - Google Patents
Cmos image sensor Download PDFInfo
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- CN208444839U CN208444839U CN201721583309.3U CN201721583309U CN208444839U CN 208444839 U CN208444839 U CN 208444839U CN 201721583309 U CN201721583309 U CN 201721583309U CN 208444839 U CN208444839 U CN 208444839U
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- image sensor
- cmos image
- pixel
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- lenticule
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Abstract
The utility model provides a kind of cmos image sensor, comprising: is provided with the pixel array of several pixels；At least two lenticules are respectively arranged in single pixel.The cmos image sensor of the utility model is respectively arranged at least two lenticules by single pixel, reduces the diagonal gap of lenticule between adjacent diagonal pixel, improves the extinction efficiency of imaging sensor, improves image quality.
Description
Technical field
The utility model relates to a kind of cmos image sensors.
Background technique
Cmos image sensor have simple process, easily with other devices are integrated, small in size, light-weight, small power consumption, cost
Low advantage.Therefore, as technology develops, it is each that cmos image sensor replaces ccd image sensor to be applied to more and more
In electronic product.Cmos image sensor has been widely used for static digital camera, camera cell phone, digital vedio recording at present
Machine, medical photographic device (such as gastroscope), automobile-used photographic device etc..
Fig. 1, Fig. 2 shows the structures of existing cmos image sensor comprising it is provided with the pixel array of several pixels,
For four pixels P1, P2, P3, P4 in pixel array are only shown herein；The corresponding semiconductor of each pixel P1, P2, P3, P4
Photodiode 10,20,30,40 is respectively arranged in material 1, each pixel P1, P2, P3, P4 are respectively arranged with colorized optical filtering
Film C1, C2, C3, C4 and lenticule M1, M2, M3, M4, convergence and colorized optical filtering of the incident light through microlens layer M1, M2, M3, M4
After the filtering of film layer C1, C2, C3, C4, the photodiode 10,20,30,40 in semiconductor material 1 is respectively enterd, through photoelectricity two
Pole pipe 10,20,30,40 is converted into electric signal after absorbing and is exported by circuit.
In cmos image sensors, the extinction efficiency of incident light has larger impact to the image quality of imaging sensor,
Image quality can be effectively improved by improving extinction efficiency.
Utility model content
The purpose of this utility model is to provide a kind of cmos image sensors, improve extinction efficiency, improve image quality.
Based on considerations above, the utility model provides a kind of cmos image sensor, comprising: is provided with the picture of several pixels
Pixel array；Single pixel is respectively arranged at least two lenticules.
Preferably, there is same color filter film, while there are four lenticules for setting in single pixel in single pixel.
Preferably, the diagonal gap of lenticule is less than single picture between diagonal pixel adjacent in four microlens structure of single pixel
In plain list microlens structure between adjacent diagonal pixel lenticule diagonal gap.
Preferably, it is isolated in corresponding semiconductor material by deep trench isolation structure or doped region between lenticule.
It preferably, include photodiode in the semiconductor material, the partial region of the photodiode is isolated, separately
A part of regional connectivity.
Preferably, the deep trench isolation structure includes: conductive material, and the conductive material couples voltage source；And electricity is situated between
Material, be located on the side wall of the deep trench isolation structure and between the semiconductor material and the conductive material it
Between.
Preferably, the photodiode is n-type doping region, and the voltage source is negative voltage source.
Preferably, the photodiode is P-doped zone domain, and the voltage source is positive voltage source.
Preferably, the conductive material includes at least one of tungsten, copper, aluminium, titanium, polysilicon or any combination thereof.
Preferably, the dielectric substance includes at least one of hafnium oxide, silica, silicon oxynitride, aluminium oxide
Or any combination thereof.
The cmos image sensor of the utility model is respectively arranged at least two lenticules by single pixel, reduces
The diagonal gap of lenticule, improves the extinction efficiency of imaging sensor, improves into image quality between adjacent diagonal pixel
Amount.
Detailed description of the invention
By Figure of description and then it is used to illustrate the tool of the certain principles of the utility model together with Figure of description
Body embodiment, other feature and advantage possessed by the utility model will be apparent or more specifically illustrated.
Fig. 1 is the schematic top plan view of existing cmos image sensor；
Fig. 2 is the schematic cross-sectional view of the line A-A along Fig. 1；
Fig. 3 is the schematic top plan view of the cmos image sensor of the utility model；
Fig. 4 is the schematic cross-sectional view of the line B-B along Fig. 3.
Specific embodiment
In the following detailed description of the preferred embodiment, reference is constituted into the appended attached of the utility model a part
Figure.The specific embodiment that can be realized the utility model has been illustrated by way of example in appended attached drawing.Exemplary implementation
Example is not intended to exhaustive all embodiments according to the present utility model.It is appreciated that without departing from the scope of the utility model
Under the premise of, it can use other embodiments, the modification of structure or logic can also be carried out.Therefore, below specifically to retouch
It states and unrestricted, and the scope of the utility model is defined by the claims appended hereto.
Fig. 3, Fig. 4 show the structure of the cmos image sensor of the utility model comprising are provided with the picture of several pixels
Pixel array, for only showing four pixels P10, P20, P30, P40 in pixel array herein；Each pixel P10, P20, P30,
It is respectively arranged with photodiode 110,120,130,140 in the corresponding semiconductor material 100 of P40, each pixel P10, P20,
P30, P40 are respectively arranged with color filter film C10, C20, C30, C40, and each pixel P10, P20, P30, P40 are set respectively
At least two lenticules are equipped with, in this as example, there are four lenticule M11, M12, M13, M14, pixels for pixel P10 setting
P20 setting there are four lenticule M21, M22, M23, M24, pixel P30 setting there are four lenticule M31, M32, M33, M34, as
There are four lenticule M41, M42, M43, M44 for plain P40 setting.In other words, similarly to the prior art, the utility model
The single pixel of cmos image sensor has same color filter film, unlike the prior art, the utility model
There are four lenticules for the single pixel setting of cmos image sensor.
Since the diagonal gap of lenticule between diagonal pixel adjacent in four microlens structure of single pixel is less than single pixel
In single microlens structure between adjacent diagonal pixel lenticule diagonal gap, such as in Fig. 3 pixel P30 lenticule M32
Clearance D 2 between the lenticule M23 of pixel P20 be less than the lenticule M3 and pixel P2 of pixel P3 in Fig. 1 lenticule M2 it
Between clearance D 1, improve the extinction efficiency of imaging sensor, improve image quality.
In the preferred embodiment shown in Fig. 4, corresponding semiconductor material 100 between lenticule M11, M12 of pixel P10
In be isolated by deep trench isolation structure 200, then, the partial region of the photodiode 110 in semiconductor material 100 is (in Fig. 4
Upper area) isolation, another part region (lower area in Fig. 4) connection；Likewise, the lenticule M21 of pixel P20,
Also it is isolated by deep trench isolation structure 200 in corresponding semiconductor material 100 between M22, then, in semiconductor material 100
The partial region (upper area in Fig. 4) of photodiode 120 is isolated, and another part region (lower area in Fig. 4) connects
It is logical.In unshowned other embodiments, between lenticule M11, M12, between M21, M22 in corresponding semiconductor material 100
It can also be isolated by doped region.
Preferably, the deep trench isolation structure 200 includes: conductive material 201, and the conductive material couples voltage source；
And dielectric substance 202, be located at the deep trench isolation structure side wall on and between the semiconductor material 100 with it is described
Between conductive material 201.
Preferably, the photodiode 110,120 is n-type doping region, and the voltage source is negative voltage source, conduction material
Material 201 is in response to being applied to the negative voltage of conductive material from negative voltage source and in deep trench isolation structure 200 and semiconductor material
Positive charge is induced in the semiconductor material 100 of 100 interface, is reduced and is come from deep trench isolation structure 200 and semiconductor material
Influence of the defect of 100 interface to photodiode 110,120, to mitigate the dark current of photodiode 110,120
And hot noise, and then improve image quality.
Preferably, the photodiode 110,120 is P-doped zone domain, and the voltage source is positive voltage source, conduction material
Material 201 is in response to being applied to the positive voltage of conductive material from positive voltage source and in deep trench isolation structure 200 and semiconductor material
Negative electrical charge is induced in the semiconductor material 100 of 100 interface, is reduced and is come from deep trench isolation structure 200 and semiconductor material
Influence of the defect of 100 interface to photodiode 110,120, to mitigate the dark current of photodiode 110,120
And hot noise, and then improve image quality.
In one embodiment of the utility model, dielectric substance 202 may include silica (SiO2)；However,
In other examples, dielectric substance 202 may include other oxides, such as: hafnium oxide (HfO2Or HfOx), silicon nitride
(Si3N4), silicon oxynitride (SiOxNy), tantalum oxide (Ta2O5), titanium dioxide (TiO2), zirconium oxide (ZrO2), aluminium oxide
(Al2O3), lanthana (La2O3), praseodymium oxide (Pr2O3), cerium oxide (CeO2), neodymia (Nd2O3), promethium oxide (Pm2O3), oxygen
Change samarium (Sm2O3), europium oxide (Eu2O3), gadolinium oxide (Gd2O3), terbium oxide (Tb2O3), dysprosia (Dy2O3), holimium oxide
(Ho2O3), erbium oxide (Er2O3), thulium oxide (Tm2O3), ytterbium oxide (Yb2O3), luteium oxide (Lu2O3), (Y such as yttrium oxide2O3) etc.
Deng.In addition, those skilled in the relevant art are it will be recognized that teaching according to the present utility model, can adopt in dielectric substance 202
With above-mentioned metal/semiconductor and its any stoichiometric combination of oxide/nitride/nitrogen oxides.
Similarly, conductive material 201 may include tungsten；However, conductive material 201 also may include the metal of for example following item:
Copper, gold, palladium, silver, aluminium, indium, lead, nickel, titanium etc. and polysilicon.Those skilled in the relevant art are it will be recognized that above-mentioned metal
(and unlisted other metals) and any stoichiometric combination of polysilicon can be used to form conductive material 201.
The cmos image sensor of the utility model is respectively arranged at least two lenticules by single pixel, reduces
The diagonal gap of lenticule, improves the extinction efficiency of imaging sensor, improves into image quality between adjacent diagonal pixel
Amount.
It is obvious to a person skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and
And without departing substantially from the spirit or essential attributes of the utility model, it can realize that this is practical new in other specific forms
Type.Therefore, in any case, the present embodiments are to be considered as illustrative and not restrictive.In addition, it will be evident that
One word of " comprising " is not excluded for other elements and steps, and wording "one" be not excluded for plural number.It is stated in device claim
Multiple element also can be implemented by one element.The first, the second equal words are used to indicate names, and are not offered as any specific
Sequence.
Claims (10)
1. a kind of cmos image sensor characterized by comprising
It is provided with the pixel array of several pixels；
Photodiode is respectively arranged in the corresponding semiconductor material of each pixel；
Each pixel is respectively arranged with color filter film；
Single pixel is respectively set there are four lenticule.
2. cmos image sensor according to claim 1, which is characterized in that with same colored filter in single pixel
Light film.
3. cmos image sensor according to claim 1, which is characterized in that adjacent in four microlens structure of single pixel
The diagonal gap of lenticule is less than lenticule between diagonal pixel adjacent in single pixel list microlens structure between diagonal pixel
Diagonal gap.
4. cmos image sensor according to claim 1, which is characterized in that corresponding semiconductor material between lenticule
In be isolated by deep trench isolation structure or doped region.
5. cmos image sensor according to claim 4, which is characterized in that include photoelectricity two in the semiconductor material
Pole pipe, the partial region isolation of the photodiode, another part regional connectivity.
6. cmos image sensor according to claim 5, which is characterized in that the deep trench isolation structure includes:
Conductive material, the conductive material couple voltage source；
And dielectric substance, it is located on the side wall of the deep trench isolation structure and is led between the semiconductor material with described
Between electric material.
7. cmos image sensor according to claim 6, which is characterized in that the photodiode is N-doped zone
Domain, the voltage source are negative voltage source.
8. cmos image sensor according to claim 6, which is characterized in that the photodiode is P-doped zone
Domain, the voltage source are positive voltage source.
9. cmos image sensor according to claim 6, which is characterized in that the conductive material include tungsten, copper, aluminium,
At least one of titanium, polysilicon or any combination thereof.
10. cmos image sensor according to claim 6, which is characterized in that the dielectric substance include hafnium oxide,
At least one of silica, silicon oxynitride, aluminium oxide or any combination thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721583309.3U CN208444839U (en) | 2017-11-23 | 2017-11-23 | Cmos image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721583309.3U CN208444839U (en) | 2017-11-23 | 2017-11-23 | Cmos image sensor |
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| Publication Number | Publication Date |
|---|---|
| CN208444839U true CN208444839U (en) | 2019-01-29 |
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| CN201721583309.3U Active CN208444839U (en) | 2017-11-23 | 2017-11-23 | Cmos image sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111294493A (en) * | 2020-02-25 | 2020-06-16 | Oppo广东移动通信有限公司 | Image sensor, camera assembly and mobile terminal |
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2017
- 2017-11-23 CN CN201721583309.3U patent/CN208444839U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111294493A (en) * | 2020-02-25 | 2020-06-16 | Oppo广东移动通信有限公司 | Image sensor, camera assembly and mobile terminal |
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