CN109786275A - A kind of lead welding procedure and its lead for integrated antenna package - Google Patents
A kind of lead welding procedure and its lead for integrated antenna package Download PDFInfo
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- CN109786275A CN109786275A CN201910000122.3A CN201910000122A CN109786275A CN 109786275 A CN109786275 A CN 109786275A CN 201910000122 A CN201910000122 A CN 201910000122A CN 109786275 A CN109786275 A CN 109786275A
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Abstract
The present invention provides a kind of lead welding procedure for integrated antenna package, realizes that lead is connect with chip and metal framework or substrate by laser welding；The chip interconnection is the completion of the welding process of index wire and chip, lead and metal framework or two solder joints of substrate.In welding process, lead, frame or substrate and chip pad are heated by LASER SPECKLE direct irradiation, and 2-10 μm of spot diameter, laser irradiation time 20-200ms；The technique can quickly carry out connection reliable and stable between chip pad and metal framework or substrate, and chip pad and metal framework or substrate will not melt due to not reaching fusing point, and avoiding problems stress problems existing for mechanical and thermal damage and conventional bonding process.
Description
Technical field
The present invention relates to ic manufacturing technology field more particularly to a kind of lead welding for integrated antenna package
Technique and its lead.
Background technique
Since American Kiel ratio is in nineteen fifty-nine invention integrated circuit, IC industry is grown rapidly nearly 60 years.Collection
At circuit also from national defence leading-edge field is only applied to, to throughout each corner of national economy.IC design, chip manufacturing,
Four subdivision fields of packaging and testing also all correspondingly, from scratch, from small to large, are developed so far by Moore's Law.Relative to
Other three subdivision fields, integrated antenna package progress speed obviously lag.To find out its cause, mainly lead on line technique is always
The lead key closing process invented before continuing to use 70 years.Lead on line is chip and the extraneous bridge for realizing Electricity Federation network, is integrated electricity
Road perfection is applied to the tie of complete electronic set.Chip size is constantly reduced according to Moore's Law in three-dimensional, and wire bonding
Impact of the technique due to bonding force to chip, the increasingly severe reliability for affecting integrated circuit.Lead key closing process can
It is an important component of semiconductor device reliability by property, it is especially very big on the influence of the long-term reliability of circuit, according to state
Outer statistical data shows that the failure of bonding system accounts for the 25%~30% of entire semiconductor device failure mode ratio.Stringent control
The production technology environment of device processed and the bonding technology quality of lead are particularly important.In addition, the diminution of lead spacing also highlights
The bottleneck of bonding technology development.It changes leads of IC on line technique and has become problem urgently to be resolved.
Before several years, when laser welding technology is used for the welding of circuit board electronic component outer pin, the speed of laser welding
The maturity of degree, precision and technique is also welded far from the lead for being suitable for integrated circuit.The lead key of integrated circuit at that time
Speed is closed up to 25000 lines/hour, that is, 50000 solder joints/hour, i.e. 72 milliseconds/solder joint.The development of bonding technology has connect
Proximal pole causes, and the laser welding technology of mature common power can't be suitable for (60ms/ point), high-precision (± 2 μ at high speed
M) lead welding.
The lead welding procedure that patent CN105458435A is researched and developed before 3 years can only be used in semiconductor power device, right
It is not applicable for welding in the lead of integrated circuit.Main cause has three:
1. speed, the precision of lead welding: bonding wire craft at that time is designed for semiconductor power device, and emphasis is
Welding can by the large scale lead of high current and high heat-sinking capability, so, bonding wire speed is slower compared with integrated circuit, and precision
It is lower.
2. the complexity of movement: the patent is the design of semiconductor power device lead welding, pin configuration and band like form
It is only applicable to linearly operating.And between two solder joints of internal lead of integrated circuit, lead needs to do more complicated movement in the sky
To reach the bank of design.The linkage of the two kinds of wire rods and three beams of laser of the patent is not suitable for doing complicated movement.
3. cored solder characteristic: the requirement of the speed and precision of leads of IC welding needs cored solder to have preferable
Wellability, and the cored solder in the patent is in the requirement for also failing to reach integrated antenna package at that time.
The lead in integrated antenna package field is at present with gold, copper (to avoid aoxidizing, plating palladium), diameter: 15 μm -- and 50 μm；Half
The lead of conductor power device is based on crude aluminum line, diameter: 200 μm -- and 500 μm.Lead on line uses bonding technology.However, key
Close bonding force in technical process and strong influence generated to the reliability of the impact of chip to integrated circuit and power device, to
Thereafter the application of complete electronic set brings huge hidden danger.Therefore, a kind of lead Welder for integrated antenna package is researched and developed
Skill is a urgent problem to be solved.
Summary of the invention
The invention solves the above technical problem, a kind of lead welding procedure for integrated antenna package is provided and its is drawn
Line, this technique can quickly carry out connection reliable and stable between chip pad and metal framework or substrate, and chip pad and
Metal framework or substrate will not melt due to not reaching fusing point, avoid stress existing for mechanical and thermal damage and conventional bonding process
Problem.
In order to solve the above technical problems, the technical solution adopted by the present invention is that:
A kind of lead welding procedure for integrated antenna package realizes lead connection, brazing process by soldering processes
It is realized using laser；The lead connection is the welding process of index wire and chip, lead and frame or two solder joints of substrate
It completes.
Detailed process is as follows for this technique:
(1) laser parameter of laser source is adjusted are as follows: laser power (200--2000W), laser focus spot diameter (2--10
μm), laser pulse duration (20--200ms) etc..
The welding of (2) first solder joints: lead is waited for that welding end is sent to 0.2-2mm above chip pad (aluminium) prewelding station, is used
Lead is moved downward to fitting chip weldering by laser welding head alignment lead and chip pad (aluminium) preheating for adjusting specified parameter
At pad, laser pulse is opened.The cored solder of fusing soaks weld pad simultaneously and lead forms spherical solder joint；After cooling, that is, complete the
The welding of one solder joint.
The welding of (3) second solder joints: lead is waited for that welding end is sent to 0.2-1mm above metal framework (copper) prewelding station, is used
The laser welding head alignment lead and metal framework (copper) prewelding station for adjusting specified parameter, are moved downward to ferroalloy for lead
Belong to frame (copper) prewelding station, opens laser pulse.The cored solder of fusing soaks frame (copper) simultaneously and lead forms spherical weldering
Point；After cooling, that is, complete the welding of the second solder joint；To one lead of complete solder.
Further, in the welding process, the lead is that gold wire or copper lead are accompanied by cored solder, and lead specification is disconnected
Face is wide, it is thick be 15-50 μm.
Further, in the welding process, the heating of lead, frame and chip pad is added by LASER SPECKLE direct irradiation
Heat, 2-10 μm of spot diameter, laser irradiation time 20-200ms.
Further, the laser source can be optical fiber laser, gas laser or solid-state laser.
Further, the cored solder is alloy layer solder, weight percentage, chemical component are as follows: Cu
20-29%, Sn 25.0-35.0%, Ag 3.0-14.5%, Ti 3.0-9.0%, Zn 9.0-15.5%, In are surplus.
Above-mentioned lead cored solder chemical component preferably (wt, %): Cu 27.5%, Sn 33.5%, Ag 12.5%,
Ti 7.5%, Zn 15.5%, In are surplus.
Above-mentioned lead cored solder chemical component preferably (wt, %): Cu 27.5%, Sn 34.5%, Ag 13.5%,
Ti 5.5%, Zn 15.5%, In are surplus.
Above-mentioned lead cored solder chemical component preferably (wt, %): Cu 28.0%, Sn 35.0%, Ag 14.5%,
Ti 4.5%, Zn 14.5%, In are surplus.
Above-mentioned lead cored solder chemical component preferably (wt, %): Cu 26.5%, Sn 35.0%, Ag 12.5%,
Ti 6.5%, Zn 14.5%, In are surplus.
The preparation process of the lead is cored solder preparation, copper strips preparation, hot pressing.Specific preparation process is as follows:
1) (wt, %): Cu 20-29%, Sn 25.0-35.0%, Ag 3.0-14.5%, Ti are matched by alloying component
3.0-9.0%, Zn 9.0-15.5%, In are surplus, using vacuum induction melting, prepare brazing solder ingot；Fusion process
In, brazing filler metal alloy is de-gassed using graphite crucible, heat preservation degassing time is 20min.
2) homogenizing annealing: homogenization temperature is 520 DEG C, keeps the temperature 12h, furnace cooling；
3) hot extrusion cogging: alloy cast ingot heating temperature is 500 DEG C, soaking time 2h, is squeezed into specification 50mm × thickness
Spend the plate of 20mm；
4) hot rolling/intermediate annealing:
Firstly, gained plate after hot extrusion cogging is heated to 480 DEG C, 2h is kept the temperature；Then hot rolling is carried out, it is hot per pass
Roll volume under pressure be 0.1-0.3mm, 3 passages of every rolling progress intermediate annealing process, 480 DEG C of annealing temperature, annealing time
20min；Solder is hot-rolled down to a thickness of 3-8mm；
5) 15-25mm wide, 6-16mm thick copper belt is hot pressed into 10-20um wide, 10-15um are thick to be drawn with alloy strip
Line.
The advantages and positive effects of the present invention are: this technique is to realize lead and chip and gold by laser welding
Belong to frame or substrate connection.In welding process, lead, frame or substrate and chip pad are heated by LASER SPECKLE direct irradiation,
2-10 μm of spot diameter, laser irradiation time 20-200ms；The technique can quickly carry out chip pad and metal framework or substrate
Between reliable and stable connection, and chip pad and metal framework or substrate will not melt due to not reaching fusing point, this it is avoided that
Stress problem existing for mechanical and thermal damage and conventional bonding process.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of lead in the present invention；
Schematic diagram when Fig. 2 is present invention welding；
Fig. 3 is lead sectional view.
In figure:
1, red copper；2, cored solder；3, laser beam.
Specific embodiment
Specific embodiments of the present invention will now be described in detail with reference to the accompanying drawings.
Laser welding process undergoes development in more than 20 years, becomes more consummate day by day, and welding control precision has reached micron dimension, welds
Rate is connect close to millisecond magnitude, bonding technology can be replaced completely.Especially laser beam welding is without applying pressure, pad
Heat affected zone is minimum, provides reliable guarantee for lead on line.
Laser technology obtains the progress that attracts people's attention in recent years, picosecond laser, the reaching its maturity of femtosecond laser (stability,
Consistency).Especially mature picosecond laser, pulse width is short enough, and energy is enough to melt the soldering for welding lead
Material, completes the stressless precise and tiny welding of lead.
This invention is exactly to melt cored solder using state-of-the-art laser welding technology to carry out lead welding, realizes collection
The technology interconnected at the lead of circuit or semiconductor power device.
It is brazed and is generally divided into solder (lower than 450 DEG C) and solder brazing (generally greater than 450 DEG C), in chip package production certainly
So low temperature solder can be selected to reduce thermal damage；Laser welding accurately controls, the welding process of high speed and minimum heated
Many advantages, such as zone of influence, makes only choosing of the laser soldering processes as leads of IC on line technique.
The technical solution adopted in the present invention is as follows:
A kind of lead welding procedure for integrated antenna package, this technique are that lead connection is realized by soldering processes,
Brazing process is realized using laser；The lead connection is the weldering of index wire and chip, lead and frame or two solder joints of substrate
The completion of termination process.
In the welding process, the lead is gold wire or copper lead is accompanied by cored solder, and lead specification is that section is wide, thick
It is 15-50 μm.
The cored solder is alloy layer solder, weight percentage, chemical component are as follows: Cu 20-29%, Sn
25.0-35.0%, Ag 3.0-14.5%, Ti 3.0-9.0%, Zn 9.0-15.5%, In are surplus.
Embodiment 1: above-mentioned lead cored solder chemical component is preferably (wt, %): Cu 27.5%, Sn 33.5%, Ag
12.5%, Ti 7.5%, Zn 15.5%, In 3.5%.
Embodiment 2: above-mentioned lead cored solder chemical component is preferably (wt, %): Cu 27.5%, Sn 34.5%, Ag
13.5%, Ti 5.5%, Zn 15.5%, In 3.5%.
Embodiment 3: above-mentioned lead cored solder chemical component is preferably (wt, %): Cu 28.0%, Sn 35.0%, Ag
14.5%, Ti 4.5%, Zn 14.5%, In 3.5%.
Embodiment 4: above-mentioned lead cored solder chemical component is preferably (wt, %): Cu 26.5%, Sn 35.0%, Ag
12.5%, Ti 6.5%, Zn 14.5%, In 3.5%.
Following table is one group of proportion experiment embodiment of cored solder
| Ingredient (wt, %) | Cu | Sn | Ag | Ti | Zn | In |
| Cored solder A | 27.5 | 33.5 | 12.5 | 7.5 | 15.5 | 3.5 |
| Cored solder B | 27.5 | 34.5 | 13.5 | 5.5 | 15.5 | 3.5 |
| Cored solder C | 28.0 | 35.0 | 14.5 | 4.5 | 14.5 | 3.5 |
| Cored solder D | 26.5 | 35.0 | 12.5 | 6.5 | 14.5 | 3.5 |
Following table is lead (line width 20um, thick 15um) tensile test made by the cored solder of above-mentioned four kinds of different ratios.
| Tensile test (g) | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
| Cored solder A | 5.02 | 4.87 | 4.95 | 5.08 | 5.05 | 4.93 | 4.88 |
| Cored solder B | 5.03 | 4.97 | 5.11 | 5.05 | 5.03 | 4.98 | 5.01 |
| Cored solder C | 5.05 | 5.01 | 5.07 | 4.97 | 5.03 | 5.06 | 4.95 |
| Cored solder D | 4.89 | 4.91 | 4.99 | 5.01 | 4.93 | 4.93 | 4.90 |
Go out from tensile test interpretation of result, the cored solder pulling force of all proportions is average, data are good, wherein cored solder B
It shows more prominent.It may is that influence of the component of Cu to pulling force is big.
Lead made by cored solder A, B, C, D (line width 25um, thick 20um) bonding wire wellability compares:
In same welding parameter (LASER SPECKLE diameter 5um, laser power 200W, laser pulse 30ms), welding process
The wellability of cored solder A is significantly better than other three kinds, and the wellability of cored solder C is worst.It may is that the component of Ti to wellability
It influences big.In short, heterogeneity can all generate different shadows to the physicochemical property of lead welding quality, electric conductivity, thermal conductivity, solder joint
It rings.
It is that cored solder is integrated with wire bonding that this lead, which changes pin configuration,；To improve speed of welding and precision.Increase
Ti element is to improve cored solder activity, wellability, to improve speed of welding and precision.
The preparation process of above-mentioned lead is cored solder preparation, copper strips preparation, hot pressing.Specific preparation process is as follows:
1) alloy (Cu/Sn/Ag/Ti/Zn/In) composition proportion (wt, %): Cu 20-29%, Sn 25.0-35.0% is pressed,
Ag 3.0-14.5%, Ti 3.0-9.0%, Zn 9.0-15.5%, In are surplus, using vacuum induction melting, preparation soldering
Expect alloy pig；In fusion process, brazing filler metal alloy is de-gassed using graphite crucible, heat preservation degassing time is 20min；
2) homogenizing annealing: homogenization temperature is 520 DEG C, keeps the temperature 12h, furnace cooling；
3) hot extrusion cogging: alloy cast ingot heating temperature is 500 DEG C, soaking time 2h, is squeezed into specification 50mm × thickness
Spend the plate of 20mm；
4) hot rolling/intermediate annealing:
Firstly, gained plate after hot extrusion cogging is heated to 480 DEG C, 2h is kept the temperature；Then hot rolling is carried out, it is hot per pass
Roll volume under pressure be 0.1-0.3mm, 3 passages of every rolling progress intermediate annealing process, 480 DEG C of annealing temperature, annealing time
20min；Solder is hot-rolled down to a thickness of 3-8mm；
5) 15-25mm wide, 6-16mm thick copper belt is hot pressed into 10-20um wide, 10-15um are thick to be drawn with alloy strip
Line.
Detailed process is as follows for this welding procedure:
(1) laser parameter of laser source is adjusted are as follows: laser power (200-2000W), laser focus spot diameter (2-10 μ
M), laser pulse duration (20-200ms) etc..The laser source may is that optical fiber laser, gas laser or solid-state swash
Light device.
The welding of (2) first solder joints: lead is waited for that welding end is sent to 0.2-2mm above chip pad (aluminium) prewelding station, is used
Lead is moved downward to fitting chip weldering by laser welding head alignment lead and chip pad (aluminium) preheating for adjusting specified parameter
At pad, laser pulse is opened.The cored solder of fusing soaks weld pad simultaneously and lead forms spherical solder joint；After cooling, that is, complete the
The welding of one solder joint.
The welding of (3) second solder joints: lead is waited for that welding end is sent to 0.2-1mm above metal framework (copper) prewelding station, is used
The laser welding head alignment lead and metal framework (copper) prewelding station for adjusting specified parameter, are moved downward to ferroalloy for lead
Belong to frame (copper) prewelding station, opens laser pulse.The cored solder of fusing soaks frame (copper) simultaneously and lead forms spherical weldering
Point；After cooling, that is, complete the welding of the second solder joint；To one lead of complete solder.
In above-mentioned welding process, the heating of lead, frame and chip pad is heated by LASER SPECKLE direct irradiation, and hot spot is straight
2-10 μm of diameter, laser irradiation time 20-200ms.
Since cored solder has been attached to lead wire body, laser irradiation lead, cored solder melts, and beam of laser is done directly weldering
It connects.This process reform three beams of laser is single beam laser, to adapt to do the needs of compound action in the air, improves equipment all parts
Link the operability accurately controlled.In the welding process, lead, frame or substrate and chip pad are by LASER SPECKLE for this technique
Direct irradiation heating, 2-10 μm of spot diameter, laser irradiation time 20-200ms.This technique can quickly carry out chip pad and gold
Belong to connection reliable and stable between frame or substrate, and chip pad and metal framework or substrate will not melt due to not reaching fusing point
Change, avoiding problems stress problems existing for mechanical and thermal damage and conventional bonding process.
Lead shape of the invention is different from conventional wire, can do aerial compound action；The cored solder proportion of lead is led
The wellability for causing soldering allows speed of welding to promote integrated circuit level, the variation of welding procedure, so that at a high speed, again
Miscellaneous movement can execute.
The embodiments of the present invention have been described in detail above, but content is only the preferred embodiment of the present invention,
It should not be considered as limiting the scope of the invention.All changes and improvements made in accordance with the scope of the present invention, should all
It still belongs within this patent covering scope.
Claims (10)
1. a kind of lead welding procedure for integrated antenna package, which is characterized in that detailed process is as follows:
(1) laser parameter of laser source is adjusted are as follows: laser power 200-2000W, 2-10 μm of laser focus spot diameter, laser arteries and veins
Rush duration 20-200ms；
The welding of (2) first solder joints: lead is waited for that welding end is sent to 0.2-2mm above chip pad prewelding station, is referred to adjusting
Laser welding head alignment lead and the chip pad preheating for determining parameter, lead is moved downward at fitting chip pad, opens and swashs
Light pulse；The cored solder of fusing soaks weld pad simultaneously and lead forms spherical solder joint；After cooling, that is, complete the welding of the first solder joint；
The welding of (3) second solder joints: lead is waited for that welding end is sent to 0.2-1mm above metal framework prewelding station, is referred to adjusting
The laser welding head alignment lead and metal framework prewelding station for determining parameter, are moved downward to the fitting pre- welder of metal framework for lead
Laser pulse is opened in position；The cored solder of fusing soaks frame simultaneously and lead forms spherical solder joint；After cooling, that is, complete second
Solder joint welding；To one lead of complete solder.
2. a kind of lead welding procedure for integrated antenna package according to claim 1, it is characterised in that: welding
In the process, the lead is gold wire or copper lead is accompanied by cored solder, and it is 15-50 μm that lead specification is wide, thick for section.
3. a kind of lead welding procedure for integrated antenna package according to claim 2, it is characterised in that: welding
In the process, the heating of lead, frame and chip pad is heated by LASER SPECKLE direct irradiation, and 2-10 μm of spot diameter, laser shines
Penetrate time 20-200ms.
4. a kind of lead welding procedure for integrated antenna package according to claim 4, it is characterised in that: described to swash
Light source is optical fiber laser, gas laser or solid-state laser.
5. a kind of lead welding procedure for integrated antenna package according to claim 2, it is characterised in that: the pricker
Solder is alloy layer solder, weight percentage, chemical component are as follows: Cu 20-29%, Sn 25.0-35.0%, Ag
3.0-14.5%, Ti 3.0-9.0%, Zn 9.0-15.5%, In are surplus.
6. a kind of lead welding procedure for integrated antenna package according to claim 5, it is characterised in that: the pricker
Solder is alloy layer solder, weight percentage, chemical component are as follows: Cu 27.5%, Sn 34.5%, Ag
13.5%, Ti 5.5%, Zn 15.5%, In are surplus.
7. a kind of lead welding procedure for integrated antenna package according to claim 5, it is characterised in that: the pricker
Solder is alloy layer solder, weight percentage, chemical component are as follows: Cu 27.5%, Sn 33.5%, Ag
12.5%, Ti 7.5%, Zn 15.5%, In are surplus.
8. a kind of lead welding procedure for integrated antenna package according to claim 5, it is characterised in that: the pricker
Solder is alloy layer solder, weight percentage, chemical component are as follows: Cu 28.0%, Sn 35.0%, Ag
14.5%, Ti 4.5%, Zn 14.5%, In are surplus.
9. a kind of lead welding procedure for integrated antenna package according to claim 5, it is characterised in that: the pricker
Solder is alloy layer solder, weight percentage, chemical component are as follows: Cu 26.5%, Sn 35.0%, Ag
12.5%, Ti 6.5%, Zn 14.5%, In are surplus.
10. a kind of preparation method of lead for integrated circuit packaging lead welding procedure according to claim 5,
It is characterized in that, specific preparation process is as follows:
1) ingredient being carried out according to the solder chemical component, brazing solder ingot is prepared using vacuum induction melting；
2) homogenizing annealing: homogenization temperature is 520 DEG C, keeps the temperature 12h, furnace cooling；
3) hot extrusion cogging: alloy cast ingot heating temperature is 500 DEG C, soaking time 2h, is squeezed into specification 50mm × thickness
The plate of 20mm；
4) hot rolling/intermediate annealing:
Firstly, gained plate after hot extrusion cogging is heated to 480 DEG C, 2h is kept the temperature；Then hot rolling is carried out, per pass under hot rolling
Pressure amount be 0.1-0.3mm, 3 passages of every rolling progress intermediate annealing process, 480 DEG C of annealing temperature, annealing time 20min；
Solder is hot-rolled down to a thickness of 3-8mm；
5) 15-25mm wide, 6-16mm thick copper belt and alloy strip are hot pressed into the thick lead of 10-20um wide, 10-15um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910000122.3A CN109786275A (en) | 2019-01-01 | 2019-01-01 | A kind of lead welding procedure and its lead for integrated antenna package |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910000122.3A CN109786275A (en) | 2019-01-01 | 2019-01-01 | A kind of lead welding procedure and its lead for integrated antenna package |
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| CN109786275A true CN109786275A (en) | 2019-05-21 |
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ID=66499690
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180343A (en) * | 2019-12-31 | 2020-05-19 | 深圳源明杰科技股份有限公司 | Packaging method and packaging device of smart card |
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| US20090029542A1 (en) * | 2006-07-10 | 2009-01-29 | Texas Instruments Incorporated | Methods and systems for laser assisted wirebonding |
| WO2011114945A1 (en) * | 2010-03-16 | 2011-09-22 | 常陽機械株式会社 | Method and apparatus for determining acceptance/rejection of fine diameter wire bonding |
| CN105458434A (en) * | 2015-12-04 | 2016-04-06 | 王伟 | Lead welding technique for packaging semiconductor power device |
| CN107731772A (en) * | 2017-09-13 | 2018-02-23 | 北京无线电测量研究所 | A kind of wedge bonding lead ruggedized construction and reinforcement means |
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- 2019-01-01 CN CN201910000122.3A patent/CN109786275A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040211761A1 (en) * | 2003-04-24 | 2004-10-28 | Rumer Christopher L. | Method and apparatus for bonding a wire to a bond pad on a device |
| US20060219672A1 (en) * | 2005-03-31 | 2006-10-05 | Ruben David A | Laser bonding tool with improved bonding accuracy |
| US20090029542A1 (en) * | 2006-07-10 | 2009-01-29 | Texas Instruments Incorporated | Methods and systems for laser assisted wirebonding |
| WO2011114945A1 (en) * | 2010-03-16 | 2011-09-22 | 常陽機械株式会社 | Method and apparatus for determining acceptance/rejection of fine diameter wire bonding |
| CN105458434A (en) * | 2015-12-04 | 2016-04-06 | 王伟 | Lead welding technique for packaging semiconductor power device |
| CN107731772A (en) * | 2017-09-13 | 2018-02-23 | 北京无线电测量研究所 | A kind of wedge bonding lead ruggedized construction and reinforcement means |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111180343A (en) * | 2019-12-31 | 2020-05-19 | 深圳源明杰科技股份有限公司 | Packaging method and packaging device of smart card |
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