CN109778311A - A kind of preparation method and crucible for casting ingots of silicon ingot - Google Patents
A kind of preparation method and crucible for casting ingots of silicon ingot Download PDFInfo
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- CN109778311A CN109778311A CN201910066782.1A CN201910066782A CN109778311A CN 109778311 A CN109778311 A CN 109778311A CN 201910066782 A CN201910066782 A CN 201910066782A CN 109778311 A CN109778311 A CN 109778311A
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Abstract
The embodiment of the invention provides a kind of crucible for casting ingots, including crucible body, the silicon nitride layer of the crucible body bottom and side wall inner surface is set and is arranged between the crucible body bottom and the silicon nitride layer the first silicon wafer layer, the silicon purity of first silicon wafer layer is greater than 99.9999%.The crucible for casting ingots can obstruct the various impurity spread in crucible into silicon ingot, substantially reduce metal impurities and oxygen content in silicon ingot, reduce the edge red sector and tail portion red sector of silicon ingot.The present invention also provides the preparation methods for the silicon ingot for using above-mentioned crucible for casting ingots.
Description
Technical field
The present invention relates to polycrystalline silicon ingot casting technical fields, more particularly to a kind of polycrystalline silicon ingot casting method and ingot casting earthenware
Crucible.
Background technique
Mainstream photovoltaic products are crystal silicon solar energy battery and most widely used product, former material currently on the market
Material is high purity silicon.However, inevitably there is various impurity pollutions and defect in the existing silicon ingot for preparing, especially in the process
Silicon ingot edge is in the region of crucible.Since the impurity of crucible can enter silicon ingot by solid-state diffusion, the low of silicon ingot is formed
The low minority carrier life time region of silicon ingot edge is generally known as edge red sector by minority carrier lifetime area, by silicon ingot tail portion low few sub- longevity
Life region is known as tail portion red sector.During evolution, part edge red sector can be cut out together with flaw-piece, but still have part
Edge red sector remains in silicon side, and generates black surround in the cell piece of subsequent preparation and influence the performance of battery.And it is a large amount of
The mode for cutting off edge red sector and tail portion red sector, also further reduced the yield of silicon ingot, considerably increases production cost.
Reduction silicon ingot edge, the method for tail portion red sector include: that (1) is impregnated using chemical reagent at present, are removed in crucible
Impurity；(2) silica crucible is made using the quartz raw material of high-purity；(3) high purity quartz coating is prepared in inner surface of crucible.Although
The above method can reduce the concentration of metallic impurities in silicon ingot to a certain extent, but to other impurities (such as oxygen content)
It acts on unobvious.
Therefore, it is necessary to develop a kind of method and device that can be effectively reduced silicon ingot impurity.
Summary of the invention
In view of this, the embodiment of the invention provides a kind of preparation method of silicon ingot and crucible for casting ingots, the ingot casting earthenware
Crucible can obstruct the various impurity spread in crucible into silicon ingot, substantially reduce metal impurities and oxygen content in silicon ingot, reduce silicon
The edge red sector and tail portion red sector of ingot.
In a first aspect, the present invention provides a kind of crucible for casting ingots, including crucible body, setting are at the crucible body bottom
The silicon nitride layer of portion and side wall inner surfaces and the first silicon being arranged between the crucible body bottom and the silicon nitride layer
The silicon purity of lamella, first silicon wafer layer is greater than 99.9999%.
Optionally, the silicon nitride layer with a thickness of 30-60 μm.
Optionally, the crucible body side wall is provided with the second silicon wafer layer, second silicon close to one end of the bottom
Piece is placed between the side wall and the silicon nitride layer.
Optionally, the height of second silicon wafer layer accounts for the 1/10-1/5 of the crucible body Sidewall Height.
Optionally, the height of second silicon wafer layer is 50-200mm.
Optionally, first silicon wafer layer and/or second silicon wafer layer are spliced by several pieces of silicon wafers, arbitrary neighborhood
Spacing between two pieces of silicon wafers is 1-5 μm.
Optionally, first silicon wafer layer and/or second silicon wafer layer with a thickness of 50-500 μm.
Optionally, first silicon wafer layer is fixed on the crucible body bottom interior surface by binder, and described second
Silicon wafer layer is fixed on the crucible body side wall inner surfaces by the binder.
Optionally, the silicon wafer includes one of polysilicon chip, monocrystalline silicon piece and crystallite silicon wafer or a variety of.
Crucible for casting ingots described in first aspect present invention, it is interior be equipped with silicon wafer layer (the first silicon wafer layer or the second silicon wafer layer) and
Silicon nitride layer, the silicon wafer layer compact structure can effectively hinder the diffusion of impurity in crucible body, substantially reduce metal in silicon ingot
Impurity and oxygen content reduce the edge red sector and tail portion red sector of silicon ingot；The silicon nitride layer also can further stop impurity,
And be conducive to improve the viscous crucible of silicon ingot.Crucible for casting ingots of the present invention can be widely applied to photovoltaic art, for example, for making
Standby crystalline silicon ingot casting device, including ingot furnace etc..
Second aspect, the present invention provides a kind of preparation methods of silicon ingot, comprising:
Crucible for casting ingots as described in the first aspect of the invention is provided；
It is laid with seed crystal in the crucible for casting ingots bottom, seed layer is formed, silicon material is loaded above the seed layer, heat
Make in the crucible for casting ingots melting silicon materials at silicon melt；When the seed crystal in the seed layer does not melt completely,
It adjusts thermal field and forms supercooled state, the silicon melt is made to start long crystalline substance on the basis of the seed layer；
After all the silicon melt has crystallized, annealed cooling obtains silicon ingot.
Optionally, the seed crystal includes seed of single crystal silicon or multi-crystalline silicon seed crystal.
Optionally, the shape of the seed crystal includes one of bulk, sheet, strip and graininess or a variety of.
Further, optionally, the preparation method of the silicon ingot can be, but not limited to include: charging, heating, thawing, length
Brilliant, annealing and cooling step.
The preparation method of silicon ingot described in second aspect of the present invention, by utilizing ingot casting earthenware described in first aspect present invention
Crucible, and it is laid with seed crystal, silicon ingot is prepared using fritting method；Entire method is easy and efficiently, can be used for preparing polycrystal silicon ingot,
Class monocrystal silicon or monocrystal silicon.The edge red sector and tail portion red sector of the silicon ingot prepared by the preparation method can be obtained effectively
To control, greatly reduce the impurity content and defect of silicon ingot, significantly improves the quality and yields of silicon ingot, be made of the silicon ingot
Solar battery have higher photoelectric conversion efficiency, substantially reduce the production cost of solar battery.
Advantages of the present invention will be illustrated partially in the following description, and a part is apparent according to specification
, or can implementation through the embodiment of the present invention and know.
Detailed description of the invention
More clearly to illustrate the contents of the present invention, it is carried out specifically with specific embodiment with reference to the accompanying drawing
It is bright.
Fig. 1 is the cross section structure schematic diagram for the crucible for casting ingots 100 that one embodiment of the invention provides；
Fig. 2 be another embodiment of the present invention provides crucible for casting ingots 200 cross section structure schematic diagram；
Fig. 3 is the cross section structure schematic diagram of crucible for casting ingots during the ingot casting that one embodiment of the invention provides；
Fig. 4 is the minority carrier life time distribution map for the silico briquette that one embodiment of the invention provides；
Fig. 5 be another embodiment of the present invention provides silico briquette minority carrier life time distribution map.
Specific embodiment
As described below is the preferred embodiment of the embodiment of the present invention, it is noted that for the common skill of the art
For art personnel, without departing from the principles of the embodiments of the present invention, several improvements and modifications can also be made, these improvement
Also it is considered as the protection scope of the embodiment of the present invention with retouching.
The term " includes " and " having " and their any changes occurred in present specification, claims and attached drawing
Shape, it is intended that cover and non-exclusive include.Such as contain the process, method of a series of steps or units, system, product or
Equipment is not limited to listed step or unit, but optionally further comprising the step of not listing or unit or optional
Ground further includes the other step or units intrinsic for these process, methods, product or equipment.
Unless otherwise noted, raw material used by the embodiment of the present invention and other chemical reagent are all commercial goods.
As shown in Figure 1, one embodiment of the invention provides a kind of crucible for casting ingots 100, including crucible body 10, setting exist
The silicon nitride layer 20 and setting of 10 bottom 11 of crucible body and 12 inner surface of side wall are in 10 bottom 11 of crucible body
The first silicon wafer layer 30 between the silicon nitride layer 20.
Wherein, the crucible body 10 can be, but not limited to include silica crucible.Optionally, the silica crucible is high-purity
The silica crucible of degree.The silica crucible of purity is high can reduce the diffusion in silicon ingot of impurity, but impurity to a certain extent
Reduction amount it is limited.The specification of crucible body can be varied in present embodiment.For example, the ruler of the crucible body
Very little can be the crucible of existing G6 specification.The crucible body can also be the crucible of other specifications.
Optionally, the cross sectional shape of the crucible body 10 can be, but not limited to as round, square or polygon.It is described
Polygon can be hexagon, octagon etc.
In present embodiment, the silicon nitride layer 20 covers the entire bottom and side wall inner surface of crucible body 10；It is described
Silicon nitride layer 20 also covers the first silicon wafer layer simultaneously.The silicon nitride layer with a thickness of 30-60 μm.Further, optionally,
The silicon nitride layer with a thickness of 30-50 μm.For example, the thickness of the silicon nitride layer can be 30 μm or 35 μm or 40 μm,
Or 45 μm or 50 μm or 55 μm or 60 μm.
Optionally, first silicon wafer layer 30 with a thickness of 50-500 μm.Further, optionally, first silicon wafer
Layer 30 with a thickness of 100-400 μm.For example, the thickness of first silicon wafer layer can be 50 μm or 100 μm or 150 μm, or
200 μm or 250 μm or 300 μm or 350 μm or 400 μm or 450 μm or 500 μm.In present embodiment, first silicon
Lamellar structure is fine and close, wherein the silicon purity of first silicon wafer layer is greater than 99.9999%.Compared to traditional bisque, the present invention
The ability of the barrier impurity of the silicon wafer layer is outstanding, and the metal impurities that crucible body is spread into silicon ingot can more be effectively reduced
And oxygen content, reduce the edge red sector and tail portion red sector of silicon ingot.
Optionally, first silicon wafer layer 30 can be, but not limited to be spliced by several pieces of silicon wafers.According to crucible body
Specification it is different, the number of the silicon wafer can also have difference.When the size of crucible body 10 is smaller, first silicon
Lamella can form for piece of silicon piece and cover the bottom of the crucible body.It is described when the size of crucible body 10 is bigger
First silicon wafer layer can form for the splicing of multi-disc silicon wafer and cover the bottom of the crucible body.For example, the length and width of the silicon wafer
Having a size of 156mm*156mm.Optionally, the spacing between two pieces of silicon wafers of arbitrary neighborhood is 1-5 μm.Further, arbitrarily
Spacing between adjacent two pieces of silicon wafers is 1-2 μm.The silicon wafer of high-purity is especially high to technique requirement, and the size of silicon wafer is got over
Greatly, cost is also higher, and technology difficulty can also further increase.Therefore, in present embodiment, using several pieces of silicon wafer connecting methods
The first silicon wafer layer for forming covering crucible body bottom, on the one hand can guarantee silicon wafer high-purity and high quality；It on the other hand can
To substantially reduce cost of manufacture.In prior art, the die size of high-purity has range, is difficult to accomplish that a monolith is huge
High-purity silicon wafer.
As shown in Fig. 2, another embodiment of the present invention provides a kind of crucible for casting ingots 200, including crucible body 10, setting
10 bottom 11 of crucible body and 12 inner surface of side wall silicon nitride layer 20 and the bottom of the crucible body 10 is set
The first silicon wafer layer 30 between portion 11 and the silicon nitride layer 20, the side wall 12 of the crucible body 10 is close to the bottom 11
One end is provided with the second silicon wafer layer 40, and second silicon wafer layer 40 is placed between the side wall 12 and the silicon nitride layer 20.
Optionally, the height of second silicon wafer layer accounts for the 1/10-1/5 of the crucible body Sidewall Height.For example, described
The height of second silicon wafer layer accounts for the 1/10 of the crucible body Sidewall Height, or is 1/8, or is 1/7, or is 1/6, or is 1/5.
Optionally, the height of second silicon wafer layer is 50-200mm.Further, optionally, second silicon wafer layer
Height be 100-150mm.For example, the height of second silicon wafer layer can be 50mm or 80mm or 100mm or 150mm,
Or 200mm.
In present embodiment, second silicon wafer layer can be, but not limited to be spliced by several pieces of silicon wafers.Wherein, arbitrarily
Spacing between adjacent two pieces of silicon wafers is 1-5 μm.Further, the spacing between two pieces of silicon wafers of arbitrary neighborhood is 1-
2μm。
Optionally, second silicon wafer layer with a thickness of 50-500 μm.Further, optionally, second silicon wafer layer
30 with a thickness of 100-400 μm.For example, the thickness of second silicon wafer layer can be 50 μm or 100 μm or 150 μm or 200
μm or 250 μm or 300 μm or 350 μm or 400 μm or 450 μm or 500 μm.
In present embodiment, the thickness of first silicon wafer layer and second silicon wafer layer is identical or different.
In present embodiment, first silicon wafer layer is fixed on the crucible body bottom interior surface by binder；Institute
It states the second silicon wafer layer and the crucible body side wall inner surfaces is fixed on by the binder.The binder can be viscous for ceramics
Tie agent.Further, optionally, the binder includes sodium silicate aqueous solution, silica solution, polyethylene glycol, polyvinyl alcohol and gathers
One of silazane is a variety of.It for example, the binder is silica solution, or is polyethylene glycol, or be polyvinyl alcohol, or be poly-
Silazane, or be sodium silicate aqueous solution.
Optionally, the silicon wafer in first silicon wafer layer and second silicon wafer layer include polysilicon chip, monocrystalline silicon piece and
One of crystallite silicon wafer is a variety of.For example, the silicon wafer is polysilicon chip or the silicon wafer is monocrystalline silicon piece or the silicon
Piece is crystallite silicon wafer or the silicon wafer is monocrystalline silicon piece and crystallite silicon wafer etc..
In present embodiment, the preparation process of the crucible for casting ingots can be, but not limited to include: to lead in crucible body
Binder is crossed, silicon wafer is first fixed on the one end of bottom and side wall close to bottom, splice and forms compact first silicon wafer
Layer and the second silicon wafer layer；Then spraying method is used, is sprayed in the bottom and side wall inner surface of entire crucible body in silicon chip surface
One layer of high purity silicon nitride powder coating is applied, the first silicon wafer layer and the second silicon wafer layer, and covering is completely covered in the silicon nitride layer of formation
It is not laid with the side wall inner surfaces of the second silicon wafer layer.
Crucible for casting ingots provided in an embodiment of the present invention, first silicon wafer layer and/or the second silicon wafer layer compact structure, can
Effectively to hinder the diffusion of impurity in crucible body, metal impurities and oxygen content in silicon ingot are substantially reduced, the edge for reducing silicon ingot is red
Area and tail portion red sector；The silicon nitride layer also can further stop impurity, and be conducive to improve the viscous crucible of silicon ingot.Due to leaning on
The silicon ingot of nearly crucible for casting ingots bottom preferentially forms, by crucible internal walls metal impurities and oxygen element infiltration probability risk more
Greatly, the first silicon wafer layer and the second silicon wafer layer described in present embodiment metal impurities and oxygen element can contain in significantly less silicon ingot
Amount.
One embodiment of the invention additionally provides a kind of ingot furnace, the ingot furnace also packet furnace body, and is arranged in furnace body
Crucible for casting ingots 100 or crucible for casting ingots 200.It further include heat exchange platform, backplate, heater and heat-insulation cage in the furnace body
Deng.In addition to crucible for casting ingots provided in an embodiment of the present invention, the intracorporal other component of furnace can be the prior art, this reality
It applies and does not do excessive restriction in mode.
One embodiment of the invention additionally provides a kind of preparation method of silicon ingot, referring to Fig. 3, comprising:
S10, crucible for casting ingots 100 as described in the above embodiment the present invention is provided；
S20, it is laid with seed crystal in 100 bottom 11 of crucible for casting ingots, seed layer 50 is formed, above the seed layer 50
Silicon material 60 is loaded, heating makes the silicon material 60 in the crucible for casting ingots 100 be fused into silicon melt；To in the seed layer 50
When the seed crystal does not melt completely, adjusts thermal field and form supercooled state, start the silicon melt on the basis of seed layer
It is long brilliant；
S30, after all the silicon melts have crystallized, annealed cooling obtains silicon ingot.
Optionally, in the S10, the crucible for casting ingots can also be crucible for casting ingots provided in an embodiment of the present invention
200.In the preparation method, other than having used the crucible for casting ingots, the equipment such as ingot furnace are also used.
Optionally, in the S20, the seed crystal includes seed of single crystal silicon or multi-crystalline silicon seed crystal.Optionally, the seed crystal
Shape includes one of bulk, sheet, strip and graininess or a variety of.When the seed crystal is seed of single crystal silicon, pass through institute
Stating the silicon ingot that the preparation method of silicon ingot is prepared can be class monocrystal silicon or monocrystal silicon；When the seed crystal is polysilicon seed
When brilliant, the silicon ingot being prepared by the preparation method of the silicon ingot can be polycrystalline silicon ingot.
Optionally, in the S20, the seed layer 50 with a thickness of 10-30mm.When the side of the crucible for casting ingots 100
When also containing the second silicon wafer layer on wall, the thickness of the thickness of the seed layer 50 less than the second silicon wafer layer.In the seed layer 50
The process do not melted completely of the seed crystal may be considered the seed crystal on 50 surface of seed layer and start to melt；At this point, described
The seed crystal on 50 surface of seed layer melts completely not yet.
Further, optionally, the preparation method of the silicon ingot can be, but not limited to include: charging, heating, thawing, length
Brilliant, annealing and cooling step.For example, the preparation method of silicon ingot, can be, but not limited to include:
Charging: choosing seed crystal and silicon material, after the seed crystal and silicon material are packed into crucible for casting ingots respectively, to crucible for casting ingots
It is vacuumized；
Heating: after the completion of vacuumizing, into the heating period, make silicon material heating close to after fusion temperature, be passed through argon gas, make furnace
Argon gas low pressure is formed in vivo；
Melt: under argon gas low pressure, first keeping the temperature at 1520 DEG C or more, be all fused into silicon liquid to the silicon material,
Seed layer is detected by quartz pushrod, when the single crystal seed in the seed layer not completely melt when, by temperature by
Step is reduced to 1450 DEG C or less and keeps temperature；
It is long brilliant: under argon gas low pressure, to open heat-insulation cage with the cooling heat exchange platform, make the institute in the crucible for casting ingots
Silicon liquid is stated along temperature gradient, from bottom to top directional solidification；
Annealing: within a certain period of time, the heat-insulation cage being closed, while temperature is reduced to 1400 DEG C or less and herein temperature
Degree heat preservation a period of time, to eliminate built-in thermal stress in the silicon ingot generated；
It is cooling: silicon ingot is quickly cooled down in furnace body to tapping temperature.
It optionally, further include that vacuum leak hunting step is carried out to crucible for casting ingots before being vacuumized to crucible for casting ingots.
Wherein, the damage to crucible for casting ingots inner wall is avoided in the loading procedure of silicon material as far as possible.
Since silicon ingot is during ingot casting, take the lead in being long brilliant from crucible for casting ingots bottom to top directional solidification, close to casting
The time of the silicon ingot of ingot crucible bottom is longer, and the first silicon wafer layer and the second silicon wafer layer can effectively be blocked in bottom and newly be frozen into
The silicon ingot of type is by the diffusion of metal impurities and oxygen element, and after entire silicon ingot is formed and cooled down, taking-up obtains silicon ingot.
The preparation method for the silicon ingot that embodiment of the present invention provides, by utilizing the ingot casting earthenware provided using embodiment
Crucible, and it is laid with seed crystal, silicon ingot is prepared using fritting method；Entire method is easy and efficiently, can be used for preparing polycrystal silicon ingot,
Class monocrystal silicon or monocrystal silicon.The edge red sector and tail portion red sector of the silicon ingot prepared by the preparation method can be obtained effectively
To control, greatly reduce the impurity content and defect of silicon ingot, significantly improves the quality and yields of silicon ingot, be made of the silicon ingot
Solar battery have higher photoelectric conversion efficiency, substantially reduce the production cost of solar battery.
A kind of preparation method of the silicon ingot of embodiment 1, comprising:
It prepares and crucible for casting ingots is provided, comprising: one layer of vitrified bonding silica solution is brushed in silica crucible bottom, by monocrystalline
Silicon wafer is successively laid on vitrified bonding, and for monocrystalline silicon piece having a size of 156mm*156mm, the gap between silicon wafer is 3-5mm；To list
Crystal silicon chip the first silicon wafer layer of close rear formation Nian Jie with silica crucible, then the bottom and side wall inner surface spraying one of silica crucible
The high-purity silicon nitride layer of layer, about 50 μm of coating layer thickness, the first silicon wafer layer with a thickness of 200 μm.
It is laid with single crystal seed in the crucible for casting ingots bottom, about 10mm seed layer is formed, is filled out above the seed layer
Silicon material is filled, heating makes in the crucible for casting ingots melting silicon materials at silicon melt；Seed layer is detected by quartz pushrod,
When the single crystal seed in the seed layer is not melted completely, adjusts thermal field and form supercooled state, the silicon melt is made to exist
Start long crystalline substance on the basis of the seed layer；
After all the silicon melt has crystallized, annealed cooling obtains monocrystal silicon.
Silico briquette is obtained after the monocrystal silicon of casting is carried out evolution and tests minority carrier life time, as shown in figure 4, the low few son in tail portion
The height in service life region is 45mm, and more common crucible reduces 10mm, and few subgraph spectrum is cleaner, and tenor substantially reduces, and oxygen contains
Amount decline 5ppma.Silico briquette is further cut into silicon wafer to reach using average cell transfer efficiency after the preparation of single crystal battery technique
20% or more, the photo attenuation 1.2% of cell piece.The minority carrier life time figure of silicon wafer in Fig. 4 is spliced by several pieces of silicon wafers,
It can be used for reacting silicon ingot entire surface quality, effectively prevent local presentation.
A kind of preparation method of the silicon ingot of embodiment 2, comprising:
It prepares and crucible for casting ingots is provided, comprising: brush one layer of pottery close to one end of bottom in silica crucible bottom and side wall
Polysilicon chip is successively laid on vitrified bonding polyvinyl alcohol by porcelain binder, monocrystalline silicon piece having a size of 156mm*156mm,
Gap between polysilicon chip is 1-3mm；The first silicon wafer layer and the second silicon are formed after monocrystalline silicon piece is Nian Jie with silica crucible closely
Lamella, then silica crucible bottom and side wall inner surface spray one layer of high-purity silicon nitride layer, about 50 μm of coating layer thickness, first
Silicon wafer layer with a thickness of 250 μm, the second silicon wafer layer with a thickness of 250 μm, the height of the second silicon wafer layer is 50mm.
It is laid with single crystal seed in the crucible for casting ingots bottom, 30mm seed layer is formed, is loaded above the seed layer
Silicon material, heating make in the crucible for casting ingots melting silicon materials at silicon melt；Seed layer is detected by quartz pushrod, to
When the single crystal seed in the seed layer is not melted completely, adjusts thermal field and form supercooled state, make the silicon melt in institute
It states and starts long crystalline substance on the basis of seed layer；
After all the silicon melt has crystallized, annealed cooling obtains monocrystal silicon.
Silico briquette is obtained after the monocrystal silicon of casting is carried out evolution and tests minority carrier life time, as shown in figure 5, the red hem width in side
Degree is 0, and bottom red sector length 43mm, the low minority carrier life time height in bottom and the low minority carrier life time width of side wall all reduce 10mm or more,
Tenor substantially reduces, and oxygen content declines 5ppma.Silico briquette is cut into silicon wafer and uses average electricity after the preparation of single crystal battery technique
Pond transfer efficiency reaches 20.2%.The minority carrier life time figure of silicon wafer in Fig. 5 is spliced by several pieces of silicon wafers, can be used for anti-
Silicon ingot entire surface quality is answered, local presentation is effectively prevent.
It should be noted that the announcement and elaboration of book, those skilled in the art in the invention may be used also according to the above description
To change and modify the above embodiment.Therefore, the invention is not limited to specific implementations disclosed and described above
Mode should also be as within scope of protection of the claims of the invention some equivalent modifications of the invention and change.In addition,
Although using some specific terms in this specification, these terms are merely for convenience of description, not to structure of the present invention
At any restrictions.
Claims (10)
1. a kind of crucible for casting ingots, which is characterized in that including crucible body, table is arranged in the crucible body bottom and side wall
The silicon nitride layer in face and the first silicon wafer layer being arranged between the crucible body bottom and the silicon nitride layer, described
The silicon purity of one silicon wafer layer is greater than 99.9999%.
2. crucible for casting ingots as described in claim 1, which is characterized in that the crucible body side wall is close to the one of the bottom
End is provided with the second silicon wafer layer, and second silicon wafer is placed between the side wall and the silicon nitride layer.
3. crucible for casting ingots as claimed in claim 2, which is characterized in that the height of second silicon wafer layer accounts for the crucible sheet
The 1/10-1/5 of body sidewall height.
4. crucible for casting ingots as claimed in claim 2, which is characterized in that the height of second silicon wafer layer is 50-200mm.
5. crucible for casting ingots as claimed in claim 2, which is characterized in that first silicon wafer layer and/or second silicon wafer
Layer is spliced by several pieces of silicon wafers, and the spacing between two pieces of silicon wafers of arbitrary neighborhood is 1-5 μm.
6. crucible for casting ingots as claimed in claim 2, which is characterized in that first silicon wafer layer and/or second silicon wafer
Layer with a thickness of 50-500 μm.
7. crucible for casting ingots as claimed in claim 2, which is characterized in that first silicon wafer layer is fixed on institute by binder
Crucible body bottom interior surface is stated, second silicon wafer layer is fixed on table in the crucible body side wall by the binder
Face.
8. crucible for casting ingots as claimed in claim 5, which is characterized in that the silicon wafer include polysilicon chip, monocrystalline silicon piece and
One of crystallite silicon wafer is a variety of.
9. a kind of preparation method of silicon ingot characterized by comprising
Crucible for casting ingots as described in claim 1-8 any one is provided；
It is laid with seed crystal in the crucible for casting ingots bottom, forms seed layer, silicon material is loaded above the seed layer, heating makes institute
The melting silicon materials are stated in crucible for casting ingots into silicon melt；When the seed crystal in the seed layer does not melt completely, adjust
Thermal field forms supercooled state, and the silicon melt is made to start long crystalline substance on the basis of the seed layer；
After all the silicon melt has crystallized, annealed cooling obtains silicon ingot.
10. preparation method as claimed in claim 9, which is characterized in that the seed crystal includes seed of single crystal silicon or polysilicon seed
It is brilliant.
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| CN104342752A (en) * | 2013-07-29 | 2015-02-11 | 晶科能源有限公司 | Method for ingoting polycrystalline silicon |
| CN104294355A (en) * | 2014-09-04 | 2015-01-21 | 奥特斯维能源（太仓）有限公司 | Polysilicon preparation process |
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