CN109778151B - Chemical deposition method and equipment for continuous wafer-by- wafer production using a carrier - Google Patents
Chemical deposition method and equipment for continuous wafer-by- wafer production using a carrier Download PDFInfo
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- CN109778151B CN109778151B CN201711169294.0A CN201711169294A CN109778151B CN 109778151 B CN109778151 B CN 109778151B CN 201711169294 A CN201711169294 A CN 201711169294A CN 109778151 B CN109778151 B CN 109778151B
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- 238000005234 chemical deposition Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 33
- 230000007246 mechanism Effects 0.000 claims abstract description 67
- 238000000151 deposition Methods 0.000 claims abstract description 60
- 230000008021 deposition Effects 0.000 claims abstract description 58
- 238000006243 chemical reaction Methods 0.000 claims abstract description 57
- 238000010924 continuous production Methods 0.000 claims abstract description 9
- 238000001465 metallisation Methods 0.000 claims abstract description 5
- 239000000969 carrier Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 32
- 238000000034 method Methods 0.000 abstract description 23
- 229910052759 nickel Inorganic materials 0.000 abstract description 16
- 239000010931 gold Substances 0.000 abstract description 15
- 229910052737 gold Inorganic materials 0.000 abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 14
- 230000000750 progressive effect Effects 0.000 abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 238000005406 washing Methods 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 26
- 238000007654 immersion Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 16
- 238000005137 deposition process Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 230000004913 activation Effects 0.000 description 9
- 238000001035 drying Methods 0.000 description 8
- 238000012805 post-processing Methods 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 238000005554 pickling Methods 0.000 description 4
- 238000007781 pre-processing Methods 0.000 description 4
- 238000009388 chemical precipitation Methods 0.000 description 3
- 239000012295 chemical reaction liquid Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010981 drying operation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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Abstract
一种运用载具采逐片连续生产的化学沉积方法及设备,其中该方法是运用载具将至少一电路板采直立式承载着;之后由该载具将该电路板移入一沉积反应槽内进行化学沉积反应,该沉积反应槽内依序设有初始位置、多个中继位置、以及最终位置;由移动机构带动该载具依序由该初始位置、多个中继位置、移动至该最终位置,利用该电路板在沉积反应槽内等留预定时间,完成该沉积反应槽内金属沉积于该电路板的作业;本发明是设计采用逐片电路板以渐进式移动而完成金属沉积于电路板的相关作业,能扩大应用于各种化学沉积作业,例如沉积镍、沉积金、沉积铜、沉积钖、沉积银等。
A chemical deposition method and equipment for continuous production using a carrier, wherein the method uses a carrier to carry at least one circuit board in an upright manner; then the carrier moves the circuit board into a deposition reaction tank for chemical deposition reaction, wherein the deposition reaction tank is provided with an initial position, multiple relay positions, and a final position in sequence; a moving mechanism drives the carrier to move from the initial position, multiple relay positions, to the final position in sequence, and the circuit board is allowed to wait in the deposition reaction tank for a predetermined time to complete the operation of metal deposition on the circuit board in the deposition reaction tank; the present invention is designed to use the circuit boards to be moved piece by piece in a progressive manner to complete the related operations of metal deposition on the circuit board, and can be expanded to various chemical deposition operations, such as deposition of nickel, deposition of gold, deposition of copper, deposition of tin, deposition of silver, etc.
Description
技术领域technical field
本发明为一种电路板的化学沉积方法的技术领域,尤其指一种采逐片连续生产的化学沉积方法及设备。The present invention relates to the technical field of chemical deposition methods for circuit boards, in particular to a chemical deposition method and equipment for continuous production chip by chip.
背景技术Background technique
在习用化学镍金制程中,是利用单一吊篮将多片电路板为一组,将所述电路板依序上升、下降及移动至各化学溶液槽或各类槽室内进行相关作业,以满足大量生产的需。其具体流程为上料→清洁→水洗→微蚀→水洗→酸洗→水洗→预浸→活化→水洗→化学沉镍→水洗→化学沉金→水洗→烘干→下料。所采用的生产设备,如图1所示,多个反应槽室呈直线状依序排形成一生产线,包括:清洁槽101及多个水洗槽102、微蚀槽103及多个水洗槽104、酸洗槽105及多个水洗槽106、预浸槽107、交换位槽108、活化槽109、多个化学沉镍槽110及多个水洗槽111、多个化学沉金槽112及多个水洗槽113、最后至干燥槽114。生产作业方式是将多片(例如20~60片)电路板为一组,呈垂直状插置于吊篮115内,本实施例是利用两台龙门式天车116、117,带动吊篮115垂直升降且而于前述反应槽室依序移动。当吊篮115由龙门式天车116依序移动至交换位槽108后,将由龙门式天车117接手移动至后续反应槽室内作业。In the conventional electroless nickel-gold process, a single hanging basket is used to group multiple circuit boards into a group, and the circuit boards are sequentially raised, lowered, and moved to each chemical solution tank or various tank chambers for related operations to meet the needs of Need for mass production. The specific process is feeding→cleaning→water washing→micro-etching→water washing→pickling→water washing→predip→activation→water washing→chemical nickel precipitation→water washing→chemical precipitation gold→water washing→drying→cutting. The used production equipment, as shown in FIG. 1 , a plurality of reaction tank chambers are arranged in a straight line to form a production line, including: a
在前述生产设备中,每组吊篮115的多片电路板皆需下降至各槽室内,完成相关作业后上升,之后再移动至下一个槽室,因体积庞大,负载重量极重,一个人无法搬动,需要较大的机构作动空间,因此机台纵向高度高(可达4米),宽度达2米(若含操作人员的作动平台,宽度可达4米)。虽然整条生产线可设计一机壳封闭,但庞大的生产线并无法有效的封闭,若产线发生小故障,也必须打开操作窗口加以排除,过程中容易让制程中有害气体飘散,影响操作者的健康。In the above-mentioned production equipment, the multiple circuit boards of each group of hanging
再者,每个槽室皆必须容纳吊篮垂直放入,并且让液体完全浸泡电路板,相对地所需容量大,基本上每个槽所需液体可达500升,故制程中各种反应槽液的需求量大,槽体尺寸大造价也高。另外生产后的大量废液处理也是一个成本负担。In addition, each tank chamber must accommodate the hanging basket vertically, and allow the liquid to completely soak the circuit board. The required capacity is relatively large. Basically, the liquid required for each tank can reach 500 liters. Therefore, various reactions in the process are required. The demand for tank liquid is large, and the size of the tank body is large and the cost is high. In addition, the disposal of a large amount of waste liquid after production is also a cost burden.
在后段制程中由于仍然是采用容纳直立式多片电路板的吊篮来移动,经水洗后的干燥作业中,容易使电路板表面残留干燥后的水渍,影响电路板质量,因此电路板仍须再进行一次后处理,即单独将每片电路板水平输送,进行水洗、吹干、烘干等作业,而增加额外的生产成本。综合以上所述习用方式存在着许多缺点,极需改善。In the back-end process, because the hanging basket that accommodates vertical multi-piece circuit boards is still used to move, in the drying operation after washing, it is easy to leave water stains on the surface of the circuit board after drying, which affects the quality of the circuit board. Therefore, the circuit board It is still necessary to perform post-processing again, that is, to transport each circuit board horizontally separately, and perform operations such as water washing, drying, drying, etc., which increases additional production costs. In conclusion, there are many shortcomings in the conventional methods mentioned above, which need to be improved.
因此本发明人思考是否能针对习用制程加以分析及改善,期待提出较佳及创新的方式,分析习用制程,其可分为三个大部份:前处理、沉积制程、以及后处理,前处理包括:清洁→水洗→微蚀→水洗→酸洗→水洗。沉积制程包括:预浸→活化→水洗→化学沉镍→水洗→化学沉金→水洗。后处理包括:水洗→烘干。为此本发明人思考改变习用以吊篮一次吊挂大量电路板的生产模式,本发明改采逐片移动生产的模式,其中在前处理及后处理作业中,该电路板皆采水平逐片渐进式移动,在沉积制程中,电路板则包括水平逐片渐进式移动及直立式逐片渐进式移动。在前处理及后处理皆有相关的设备可以采用,但本发明改良后的沉积制程并无相关设备可以采用,因为沉积反应所需时间较长,例如沉积镍需20~30分、沉积金需10分钟以上,若采用水平渐进式移动,所需的槽体长度尺寸将非常巨大,化学反应液所需量也非常多,成本太高根本无法导入生产,因此本发明针对沉积制程开发一组运用载具采用逐片连续生产的化学沉积设备及方法,采用直立式逐片渐进式移动,使本发明的此制程能顺利运行。Therefore, the inventor considers whether the conventional process can be analyzed and improved, and expects to propose a better and innovative way to analyze the conventional process, which can be divided into three major parts: pre-processing, deposition process, and post-processing, pre-processing Including: cleaning→water washing→micro-etching→water washing→pickling→water washing. The deposition process includes: pre-dip→activation→water washing→chemical precipitation of nickel→water washing→chemical precipitation gold→water washing. Post-processing includes: washing → drying. For this reason, the inventors of the present invention have considered changing the conventional production mode of hanging a large number of circuit boards in a hanging basket. The present invention adopts the moving production mode one by one. In the pre-processing and post-processing operations, the circuit boards are horizontally sliced one by one. Progressive movement, in the deposition process, the circuit board includes horizontal progressive movement and vertical progressive movement. Relevant equipment can be used in both pre-treatment and post-treatment, but no relevant equipment can be used in the improved deposition process of the present invention, because the deposition reaction takes a long time, such as 20-30 minutes for nickel deposition, and 20 to 30 minutes for deposition of gold. For more than 10 minutes, if the horizontal progressive movement is adopted, the required length and size of the tank body will be very large, and the required amount of chemical reaction solution will be very large, and the cost is too high to be introduced into production. Therefore, the present invention develops a set of applications for the deposition process. The carrier adopts the chemical deposition equipment and method of continuous production one by one, and adopts the vertical type of progressive movement one by one, so that the process of the present invention can run smoothly.
发明内容SUMMARY OF THE INVENTION
本发明的主要目的是提供一种化学沉积方法及设备,主要在化学沉积生产作业中,由载具承载电路板采用垂直式逐片生产模式在沉积槽内移动,由初始位置移动至最终位置的停留时间,完成沉积反应槽内金属沉积于电路板的作业。The main purpose of the present invention is to provide a chemical deposition method and equipment. Mainly in the chemical deposition production operation, the carrier is carried by the circuit board to move in the deposition tank in a vertical chip-by-chip production mode, and the circuit board moves from the initial position to the final position. During the residence time, the metal deposition operation in the deposition reaction tank is completed on the circuit board.
本发明的次要目的是提供一种运用载具采逐片生产的化学沉积方法及设备,此方式能广泛应用于化学沉积镍、化学沉积金、化学沉积铜、化学沉积钖、化学沉积银等作业。The secondary purpose of the present invention is to provide a kind of chemical deposition method and equipment for producing piece by piece using a carrier, which can be widely used in chemical deposition of nickel, chemical deposition of gold, chemical deposition of copper, chemical deposition of tantalum, chemical deposition of silver, etc. Operation.
为达上述目的,本发明提供一种运用载具逐片生产的化学沉积的方法,其步骤包括:使用载具将至少一电路板采直立式承载着;该载具将该电路板移入一沉积反应槽内进行化学沉积反应,该沉积反应槽内依序设有初始位置、多个中继位置、以及最终位置;由移动机构带动该载具依序由该初始位置、多个该中继位置、移动至该最终位置,利用该电路板在沉积反应槽内等留预定时间,完成该沉积反应槽内金属沉积于该电路板的作业。In order to achieve the above object, the present invention provides a method for chemical deposition produced one by one using a carrier. The steps include: using a carrier to carry at least one circuit board upright; The chemical deposition reaction is carried out in the reaction tank, and the deposition reaction tank is sequentially provided with an initial position, a plurality of relay positions, and a final position; the carrier is driven by the moving mechanism to sequentially move from the initial position, the plurality of relay positions , move to the final position, and use the circuit board to stay in the deposition reaction tank for a predetermined time to complete the operation of depositing the metal in the deposition reaction tank on the circuit board.
再者,本发明运用载具逐片生产的化学沉积设备,包括:沉积反应槽、多个载具、移动机构及两组拨动机构,该沉积反应槽是在两个槽壁顶面各设有一排位置相对的齿条,该齿条是由多个单向斜齿所构成;该载具包括一横杆及两承架,该两承架呈对称状固定于该横杆,该两承架于另一侧具有一开口,由此开口放入电路板,该载具是由该横杆两侧架设于位置相对的两个该单向斜齿内;该移动机构安装于该沉积反应槽外壁,负责带动两组拨动机构同步产生往复移动,且每次仅移动一个该单向斜齿的距离;每一组拨动机构包括多个可被转动的拨动件,该横杆的两侧位置分别有一个该拨动件与之对应,当该移动机构带动该拨动机构向前移动时,该拨动件会推动该横杆沿着该单向斜齿的斜面缓慢上升至最高点后,掉落下一级的该单向斜齿内,当该移动机构带动该拨动机构向后移动时,该拨动件可被旋转而解除与横杆接触的状态。Furthermore, the present invention uses a carrier-by-piece production of chemical deposition equipment, including: a deposition reaction tank, a plurality of carriers, a moving mechanism and two sets of toggle mechanisms, and the deposition reaction tank is provided on the top surfaces of the two tank walls. There is a row of opposite racks, the rack is composed of a plurality of unidirectional helical teeth; the carrier includes a crossbar and two bearing brackets, the two bearing brackets are symmetrically fixed to the horizontal bar, the two bearing brackets There is an opening on the other side of the frame, through which the circuit board is placed, and the carrier is erected in the two opposite one-way helical teeth on both sides of the cross bar; the moving mechanism is installed in the deposition reaction tank The outer wall is responsible for driving the two sets of toggle mechanisms to synchronously reciprocate, and only move one distance of the one-way helical tooth at a time; There is a corresponding toggle member at the side position. When the moving mechanism drives the toggle mechanism to move forward, the toggle member will push the crossbar to slowly rise to the highest point along the slope of the one-way helical tooth. Afterwards, it is dropped into the one-way helical tooth of the next level, and when the moving mechanism drives the toggle mechanism to move backward, the toggle member can be rotated to release the state of being in contact with the cross bar.
本发明为一种运用载具逐片连续生产的化学沉积方法及设备,不同于以往采用吊篮式一次承载20~60几片电路板的生产模式,主要是采用逐片电路板以渐进式移动进行化学沉积作业,在预浸、活化作业中,电路板采水平逐片渐进式移动,在后续化学沉积反应中则采用直立式逐片渐进式移动。此设计不仅能大幅使整体设备尺寸缩小,让设备造价成本降低,生产速度快,且能持维良好的生产质量。The invention is a chemical deposition method and equipment for continuous production piece by piece using a carrier, which is different from the previous production mode that uses a hanging basket type to carry 20 to 60 pieces of circuit boards at a time. For chemical deposition operations, in the pre-dip and activation operations, the circuit board is moved horizontally and gradually, and in the subsequent chemical deposition reaction, it is moved vertically one by one. This design can not only greatly reduce the size of the overall equipment, but also reduce the cost of the equipment, the production speed is fast, and the production quality can be maintained.
另外,本发明运用载具逐片连续生产的化学沉积设备,是利用该载具承载着电路板在化学沉积槽内逐片移动,载具每一次沿原本的单向斜齿移动后掉落至次一级单向斜齿所产生的振动,可让因沉积反应而附着于电路板表面的气泡分离,本发明多达数10次以上的振动,能有效地消除气泡附着情形,另外不断地振动也能增加反应液与电路板接触,增加沉积速率,借此维持着生产质量,又能满足运用载具逐片生产的目的。In addition, the present invention uses the carrier to continuously produce the chemical deposition equipment piece by piece, which uses the carrier to carry the circuit board to move piece by piece in the chemical deposition tank. The vibration generated by the secondary one-way helical teeth can separate the air bubbles attached to the surface of the circuit board due to the deposition reaction. The vibration of the present invention can effectively eliminate the adhesion of air bubbles for more than 10 times. In addition, the continuous vibration It can also increase the contact between the reaction liquid and the circuit board, and increase the deposition rate, thereby maintaining the production quality, and meeting the purpose of using a carrier to produce piece by piece.
以下配合图式及组件符号对本发明的实施方式做更详细的说明,以使熟习该项技艺者在研读本说明书后能据以实施。The embodiments of the present invention will be described in more detail below with reference to the drawings and component symbols, so that those skilled in the art can implement them after studying the description.
附图说明Description of drawings
图1为习用化学镍金制程设备的示意图。FIG. 1 is a schematic diagram of a conventional electroless nickel-gold process equipment.
图2A为本发明所开发的沉积制程设备的示意图。FIG. 2A is a schematic diagram of the deposition process equipment developed by the present invention.
图2B为本发明沉积制程设备中,电路板移动状态的侧视示意图。2B is a schematic side view of the circuit board in a moving state in the deposition process equipment of the present invention.
图2C为本发明沉积制程设备中,电路板移动状态的俯视示意图。FIG. 2C is a schematic top view of the moving state of the circuit board in the deposition process equipment of the present invention.
图3为本发明所开发的沉积制程设备运作的流程图。FIG. 3 is a flow chart of the operation of the deposition process equipment developed in the present invention.
图4为本发明运用载具采逐片连续生产的化学沉积方法的流程图。FIG. 4 is a flow chart of the chemical deposition method for continuous wafer-by- wafer production using a carrier according to the present invention.
图5为本发明运用载具采逐片连续生产的化学沉积设备的立体图。FIG. 5 is a perspective view of the chemical deposition equipment for continuous wafer-by- wafer production using a carrier according to the present invention.
图6为本发明运用载具采逐片连续生产的化学沉积设备的分解图。FIG. 6 is an exploded view of the chemical deposition equipment for continuous wafer-by- wafer production using a carrier according to the present invention.
图7为本发明的载具的立体放大图。FIG. 7 is an enlarged perspective view of the carrier of the present invention.
图8为本发明的移动机构及拨动机构的局部放大立体图。8 is a partial enlarged perspective view of the moving mechanism and the toggle mechanism of the present invention.
图9为本发明实际运作的局部放大图(一)。FIG. 9 is a partial enlarged view (1) of the actual operation of the present invention.
图10为本发明实际运作的局部放大图(二)。FIG. 10 is a partial enlarged view (2) of the actual operation of the present invention.
图11为本发明实际运作的局部放大图(三)。FIG. 11 is a partial enlarged view (3) of the actual operation of the present invention.
图12为本发明实际运作的局部放大图(四)。FIG. 12 is a partial enlarged view (4) of the actual operation of the present invention.
附图标记说明:Description of reference numbers:
清洁槽 101
水洗槽 102
微蚀槽 103
水洗槽 104
酸洗槽 105
水洗槽 106
预浸槽 107
交换位槽 108
活化槽 109
化学沉镍槽 110
水洗槽 111
化学沉金槽 112Chemical
水洗槽 113
干燥槽 114
吊篮 115
龙门式天车 116
龙门式天车 117
预浸槽 20
活化槽 21
翻转机构 22
化学沉镍槽 23
水洗槽 24
化学沉金槽 25Chemical
回收水洗槽 26
输送机构 27
载具 AVehicle A
电路板 Bcircuit board B
第一移载机构 281The
第二移载机构 282
回收循环移载机构 283
沉积反应槽 40
槽壁 41
齿条 42
单向斜齿 421One-way helical 421
载具 50
横杆 51
承架 52
开口 53
连接杆 54connecting
持杆 55
保持片 551
移动机构 60
轨道架 61
轨道 611
框架 62
导轮 621
第一动力件 63The
作动杆 631
拨动机构 70
拨动件 71toggle 71
上枢接点 711
下枢接点 712
连动片 72
第二动力件 73
具体实施方式Detailed ways
首先针对本发明在沉积制程中所开发的设备作一说明。此设备是运用于化学镍钯金沉积制程,该设备是安装于电路板皆采水平逐片渐进式移动的前处理及后处理设备之间。本发明的设计精神为采逐片移动生产的模式,完成电路板沉积作业。First, the equipment developed in the deposition process of the present invention will be described. This equipment is used in the electroless nickel-palladium-gold deposition process. The equipment is installed between the pre-processing and post-processing equipment where the circuit boards are progressively moved horizontally. The design spirit of the present invention is to adopt the mode of moving production one by one to complete the circuit board deposition operation.
如图2A所示,本发明的沉积制程设备包括依序串联排列的预浸槽20、活化槽21、翻转机构22、化学沉镍槽23、多个水洗槽24、化学沉金槽25、回收水洗槽26、以及输送机构27。多个载具A,该载具A负责承载一电路板进行相关化学沉积作业。另外还包括第一移载机构281、第二移载机构282,以及回收循环移载机构283,此类移载机构负责移动该载具A至相关的作业槽中。在本图中该移动相关机构皆未绘出,仅用示意的方块表示。另外请参阅图2B、图2C所示,为电路板B于各槽室内作业中的状态,其中在预浸槽20及活化槽21呈水平渐进式移动,之后在翻转机构22则会由水平状态调整为垂直状态。之后在化学沉镍槽23、多个水洗槽24、化学沉金槽25、以及回收水洗槽26皆为垂直状态,最后沉积完成电路板B又会呈水平状态由输送机构27输送至后处理设备中。As shown in FIG. 2A , the deposition process equipment of the present invention includes a
如图3所示,为本发明所开发的沉积制程设备运作的流程图。请配合参阅图2A及图2B所示,此设备运用方法的步骤如下:As shown in FIG. 3 , it is a flow chart of the operation of the deposition process equipment developed in the present invention. Please refer to FIG. 2A and FIG. 2B together. The steps of the device operating method are as follows:
步骤301:逐片电路板B利用输送滚轮采水平方式依序进入该预浸槽20,进行反应前的预浸处理。Step 301 : the circuit boards B one by one enter the
步骤302:逐片电路板B利用输送滚轮采水平方式依序进入该活化槽21内,使电路板上的裸铜表面先行置换着一层极薄钯金属。Step 302 : The circuit boards B are sequentially entered into the
步骤303:电路板B移动至翻转机构22,经翻转机构22的旋转夹持单元221将电路板B送入载具A内;此机构是用以将原本采用水平移动的电路板B改为垂直式,以便进行后续的化学沉积作业。Step 303: The circuit board B is moved to the
步骤304:载具A承载电路板B进入化学沉镍槽23,由左边的初始位置移动至中间的多个中继位置,最后至最右边的最终位置,所停留的时间会使得电路板B的铜表面沉积一层镍。其中在槽内的移动方式采用渐进式,即一次仅移动一小距离,须移动多次才能由初始位置移动至最终位置。Step 304: The carrier A carries the circuit board B into the
步骤305:由第一移载机构281将载具A上升移出化学沉镍槽23,向右移动一距离后下降移入水洗槽24。于水洗槽24内进行电路板的清洗作业。参阅图2A,水洗槽24包括多个槽,左侧具有多个水洗室241及右侧为一个滴干室242。在实际的运作模式中,第一移载机构281一次会吊起5个载具A,上升后仅移动一个槽室的距离后就下降,使载具A进入水洗槽24的第一个作业室内,之后依序重复移动,在本实施例中,第一移载机构281需作动5次载具A才会进入化学沉金槽25。Step 305 : The
步骤306:由第一移载机构281将水洗槽24内的载具A移动至该化学沉金槽25内,由左边初始位置移动至中间的多个中继位置,最后至右边最终位置,所停留的时间会使得该电路板的铜表面沉积一层金。其中移动方式采用渐进式,即一次仅移动小距离,须移动多次才能由初始位置移动至最终位置。Step 306: The
步骤307:由第二移载机构282将载具A上升移出化学沉金槽25,向右移动一距离后下降移入回收水洗槽26,以清洗及回收电路板表面带出的反应金液,回收水洗槽26也包括多个槽。第二移载机构282的作动方式也与前述第一移载机构281相同。Step 307: The
步骤308:载具A最后由第二移载机构282移近输送机构27,使电路板B由垂直状改为水平状逐片移动至下一道作业。之后就会于后处理设备进行水洗及烘干作业。清空后的载具A会经由回收循环移载机构283移动至化学沉镍槽23处,以进行下一次的处理。Step 308 : The carrier A is finally moved closer to the conveying
借由本发明所开发的沉积制程设备及运作方法,能大幅使整体设备尺寸缩小,设备造价成本降低,相对所需安装的工厂面积减少,整体而言能减少设备投资金额。另外生产过程中也能减少用水量、化学反应液使用量及用电量,降低生产成本,使产品更具市场竞争力。另外设备也能更有效地封闭,减少生产过中有害气体外泄,进而提供更安全的工作环境。The deposition process equipment and operation method developed by the present invention can greatly reduce the overall equipment size, reduce the equipment cost, reduce the required installation area of the factory, and reduce the equipment investment amount as a whole. In addition, the water consumption, chemical reaction liquid consumption and electricity consumption can be reduced in the production process, the production cost can be reduced, and the product can be more competitive in the market. In addition, the equipment can be closed more effectively, reducing the leakage of harmful gases during production, thereby providing a safer working environment.
在上述设备中,该化学沉镍槽23及化学沉金槽25是运用载具逐片连续生产的化学沉积方法,不同于以往采吊篮式一次承载20~60几片电路板的生产模式,为此本发明设计了一种运用载具逐片连续生产的化学沉积设备及方法,使之能运用于该化学沉镍槽23及化学沉金槽25的沉积作业。In the above-mentioned equipment, the electroless
如图4所示,本发明运用载具逐片生产的化学沉积方法的流程图。其步骤包括:As shown in FIG. 4 , the present invention is a flow chart of the chemical deposition method for wafer-by- wafer production using a carrier. Its steps include:
如步骤401,使用载具将至少一电路板采直立式承载着;In
如步骤402,该载具将该电路板移入一沉积反应槽内进行化学沉积反应,该沉积反应槽依序设有初始位置、多个中继位置、以及最终位置;In
如步骤403,由移动机构推动该载具依序由该初始位置、多个该中继位置、移动至该最终位置,过程中利用该电路板在该沉积反应槽内等留时间,完成该沉积反应槽内金属沉积于该电路板的作业。In
另外该移动机构带动该载具移动至两相邻位置时,由前一级位置的最底点移动至最高点后,再垂直掉落于次一级位置,前述两相邻位置包括由该初始位置与中继位置、两相邻的中继位置、以及该中继位置至该最终位置。此目的是为了产生振动,消除电路板表面可能附着的气泡,该气体是因沉积反应所生成。另外振动也能增加反应液与电路板接触,增加沉积速率。In addition, when the moving mechanism drives the carrier to move to two adjacent positions, it moves from the lowest point of the previous position to the highest point, and then falls vertically to the next position. The position and the relay position, two adjacent relay positions, and the relay position to the final position. The purpose of this is to generate vibrations and eliminate air bubbles that may adhere to the surface of the circuit board, which are generated by the deposition reaction. In addition, vibration can also increase the contact between the reaction solution and the circuit board, increasing the deposition rate.
上述运用载具逐片连续生产的化学沉积方法,可以设计许多具体的设备达到此目的,本实施例就其中一种设备作说明:如图5及图6所示,为本发明运用载具逐片连续生产的化学沉积设备的立体图及分解图。本发明包括:一沉积反应槽40、多个载具50、一移动机构60及两组拨动机构70。The above-mentioned chemical deposition method using the carrier-by-piece continuous production can be designed with many specific equipment to achieve this purpose. Perspective and exploded view of a chemical deposition facility for continuous wafer production. The present invention includes: a
该沉积反应槽40为一长方型开口向上的槽体,在长边的两个槽壁41顶面各设有一排位置相对的齿条42,该齿条42是由多个单向斜齿421所构成。The
如图6所示,该载具50包括一横杆51及两承架52,该两承架52呈对称状固定于该横杆51,该承架52局部弯曲呈钩状,该两承架52于另一侧具有一开口53,该开口53可供放入电路板。在实际的作业中,该载具50是由该横杆51两侧架设于位置相对的两个该单向斜齿421上(如图5)。该载具50进一步包括有多个连接杆54,该连接杆54横向结合于两承架52之间,以维持整体的刚性。另外该载具50还包括一保持杆55,该保持杆55结合于该两承架52的最底部位置,该保持杆55两端各设有垂直状的保持片551。两个该保持片551之间的距离,恰好为电路板最大尺寸的宽度。As shown in FIG. 6 , the
该移动机构60是安装于该沉积反应槽40外壁,负责带动两组拨动机构70同步产生往复移动,且每次仅移动一个该单向斜齿421的距离。该移动机构60包括轨道架61、框架62及第一动力件63。该轨道架61环设且固定于该沉积反应槽40外壁,即固定于两侧该槽壁41上。该轨道架61上另固定着两组轨道611,该两组轨道611位置分别位于该沉积反应槽40两侧长边外壁处。该框架62呈长方型框体,尺寸大于该沉积反应槽40尺寸,组装状态是套置于该沉积反应槽40外围。请一并参阅图8,该框架62底部设有多个导轮621,该导轮621能在该轨道611上运行。该第一动力件63固定于该轨道架61,另设有可伸缩的作动杆631与该框架62结合,在本实施例中第一动力件63为气压缸、油压缸、电动伸缩杆等其中一种机构。在该第一动力件63作动时,该作动杆631伸出或缩回,进而带动该框架62产生线性的往复移动。The moving
两组拨动机构70,分别位于该框架62的两个长边外壁。每一组该拨动机构70包括多个拨动件71、连动片72、第二动力件73,每个该拨动件71具有上枢接点711及下枢接点712,该上枢接点711安装枢接于框架62外壁,该下枢接点712安装枢接于该连动片72,该连动片72受该第二动力件73驱动而能产生往复运动。在本实施例中第二动力件73为气压缸、油压缸、电动伸缩杆等其中一种机构。如图5所示,该载具50的横杆51两端会延伸出该沉积反应槽40外,并分别有一个拨动件71与之对应。该拨动件71受该移动机构60所驱动,每次利用该拨动件71推动该载具50的横杆51,使横杆51由所在处的单向斜齿421向后一级的单向斜齿421移动。Two sets of
接着就实际的作动方式作一说明:Next, the actual operation method is explained:
如图9所示,为了方便解说,仅提供本设备左前半部结构放大图,多个该载具50也未没有全部都放置于该沉积反应槽40。在作业的初期,如先前段落所述,会先将该电路板放入该载具50的承架52内,并将该载具50放入该沉积反应槽40内,该横杆51左右两区段分于位于相对的单向斜齿421上,另外与之相对的两个该拨动件71位置对应该横杆51两端。在本实施例中,最左边的单向斜齿421处,即为该载具50在该沉积反应槽40的初始位置。后续各齿即为中继位置。As shown in FIG. 9 , for the convenience of explanation, only an enlarged view of the structure of the front left half of the apparatus is provided, and not all of the
如图10所示,该移动机构60的第一动力件63作动,该作动杆631伸长,使得该框架62向右侧方向平移。带动枢接于该框架62的该拨动件71向右拨动。使该横杆51沿着该单向斜齿421最低点向最高点移动。As shown in FIG. 10 , the
如图11所示,在该横杆51由先一级单向斜齿421掉落于次一级的单向斜齿421后。该第二动力件73作动,使该连动片72向右移动,因枢接关系,该拨动件71顶端会大幅向左偏移,最使该拨动件71顶面的最高位置低于该单向斜齿421的最低位置。As shown in FIG. 11 , after the
如图12所示,该第一动力件63的作动杆631缩回,连带使该框架62退回起始位置。此过程中该拨动件71呈向左偏移状态,故移动时不会与该横杆51接触。As shown in FIG. 12 , the
在该框架62退回至初始位置后,该第二动力件73再次作动使该连动片72退回原位,就能呈现如图9的状态,等待另一个载具50放入该沉积反应槽40内。After the
综合以上所述,本发明运用载具逐片生产的化学沉积设备,利用该移动机构60所产动的往复运动,让放入于该沉积反应槽40的载具50一次移动一个单向斜齿421的距离,借此逐步由初始位置、多个该中继位置、移动至最终位置,过程中所等留的时间,就能完成金属沉积于该电路板的作业。另外该载具50每一次掉落至次一级单向斜齿421所产生的振动,可让因沉积反应而附着于电路板表面的气泡分离,多达数10次以上的振动,能有效地消除气泡附着情形,另外不断地振动也能增加反应液与电路板接触,增加沉积速率,借此维持着生产质量,又能满足运用载具逐片生产的目的。To sum up the above, the present invention uses the chemical deposition equipment produced by the carrier piece by piece, and uses the reciprocating motion generated by the moving
以上所述者仅为用以解释本发明的较佳实施例,并非企图据以对本发明做任何形式上的限制,是以,凡有在相同的创作精神下所作有关本发明的任何修饰或变更,皆仍应包括在本发明意图保护的范畴。The above descriptions are only used to explain the preferred embodiments of the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention should be made under the same creative spirit. , all should still be included in the intended protection scope of the present invention.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2087430A (en) * | 1980-11-14 | 1982-05-26 | Alford Process Equipment Ltd | Plating Apparatus |
US4820396A (en) * | 1985-03-18 | 1989-04-11 | Masi Amerigo De | Rack or transport tool for the manufacturing of printed wired boards |
CN104480519A (en) * | 2014-11-21 | 2015-04-01 | 广州明铨机械设备有限公司 | Vertical continuous PCB nickel or gold plating equipment |
CN104903491A (en) * | 2012-12-26 | 2015-09-09 | 株式会社神户制钢所 | In-line plasma CVD device |
CN207468728U (en) * | 2017-11-15 | 2018-06-08 | 黄信翔 | Chemical deposition equipment for continuous production piece by piece using carrier |
-
2017
- 2017-11-15 CN CN201711169294.0A patent/CN109778151B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2087430A (en) * | 1980-11-14 | 1982-05-26 | Alford Process Equipment Ltd | Plating Apparatus |
US4820396A (en) * | 1985-03-18 | 1989-04-11 | Masi Amerigo De | Rack or transport tool for the manufacturing of printed wired boards |
CN104903491A (en) * | 2012-12-26 | 2015-09-09 | 株式会社神户制钢所 | In-line plasma CVD device |
CN104480519A (en) * | 2014-11-21 | 2015-04-01 | 广州明铨机械设备有限公司 | Vertical continuous PCB nickel or gold plating equipment |
CN207468728U (en) * | 2017-11-15 | 2018-06-08 | 黄信翔 | Chemical deposition equipment for continuous production piece by piece using carrier |
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Effective date of registration: 20230607 Address after: No. 29, Xixia Road, Yuexi street, Wuzhong Economic Development Zone, Suzhou, Jiangsu Province Patentee after: Huang Xinxiang Patentee after: Fu Xinmin Patentee after: Haoding environmental protection technology (Hubei) Co.,Ltd. Address before: Taoyuan City, Taiwan, China Patentee before: Huang Xinxiang Patentee before: Huang Xinhang |