CN109778151B - Chemical deposition method and equipment for continuous production piece by carrier - Google Patents
Chemical deposition method and equipment for continuous production piece by carrier Download PDFInfo
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- CN109778151B CN109778151B CN201711169294.0A CN201711169294A CN109778151B CN 109778151 B CN109778151 B CN 109778151B CN 201711169294 A CN201711169294 A CN 201711169294A CN 109778151 B CN109778151 B CN 109778151B
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Abstract
A chemical deposition method and apparatus for continuous production by carrier piece by piece, wherein the method uses carrier to vertically carry at least one circuit board; then the carrier moves the circuit board into a deposition reaction tank for chemical deposition reaction, and the deposition reaction tank is internally provided with an initial position, a plurality of relay positions and a final position in sequence; the carrier is driven by the moving mechanism to move from the initial position, a plurality of relay positions to the final position in sequence, and the metal in the deposition reaction tank is deposited on the circuit board by utilizing the circuit board to wait for a preset time in the deposition reaction tank; the invention is designed to complete the relevant operations of metal deposition on the circuit board by adopting the gradual movement of the circuit board by board, and can be widely applied to various chemical deposition operations, such as nickel deposition, gold deposition, copper deposition, tin deposition, silver deposition and the like.
Description
Technical Field
The invention relates to the technical field of a chemical deposition method of a circuit board, in particular to a chemical deposition method and equipment adopting piece-by-piece continuous production.
Background
In the conventional electroless nickel-gold process, a plurality of circuit boards are grouped by using a single hanging basket, and the circuit boards are sequentially lifted, lowered and moved to various chemical solution tanks or various tank chambers for related operations, so as to meet the requirements of mass production. The specific process flow is loading → cleaning → washing → microetching → washing → acid washing → presoaking → activating → washing → chemical nickel deposition → washing → chemical gold deposition → washing → drying → unloading. As shown in FIG. 1, the production apparatus used in the method comprises a plurality of reaction chambers arranged in a linear manner in sequence to form a production line, comprising: a cleaning tank 101, a plurality of rinsing tanks 102, a microetching tank 103, a plurality of rinsing tanks 104, a pickling tank 105, a plurality of rinsing tanks 106, a pre-soaking tank 107, a swap tank 108, an activation tank 109, a plurality of electroless nickel plating tanks 110, a plurality of rinsing tanks 111, a plurality of electroless gold plating tanks 112, a plurality of rinsing tanks 113, and finally a drying tank 114. The production operation is to combine a plurality of (e.g. 20-60) circuit boards into a group, and vertically insert the circuit boards into the cradle 115. in this embodiment, two gantry type crown blocks 116, 117 are used to drive the cradle 115 to vertically lift and sequentially move in the reaction chamber. After the baskets 115 are sequentially moved to the swap bay 108 by the gantry crane 116, they are then transferred to the next chamber by the gantry crane 117.
In the aforementioned production equipment, the multiple circuit boards of each cradle 115 need to descend into each chamber, ascend after completing the related operation, and then move to the next chamber, because of the large volume, heavy load, unable to move by one person, and need a large mechanism actuation space, the machine has a high longitudinal height (up to 4 meters), and a width of 2 meters (up to 4 meters if including the actuation platform of the operator). Although the whole production line can be designed to be closed by a machine shell, the huge production line cannot be effectively closed, if the production line has a small fault, an operation window must be opened to remove the fault, and harmful gases in the manufacturing process are easy to scatter in the process, so that the health of operators is influenced.
Moreover, each chamber must accommodate a hanging basket vertically placed in the chamber and allow the liquid to completely soak the circuit board, so the required capacity is relatively large, basically, the liquid required by each chamber can reach 500 liters, the required amount of various reaction tank liquids in the manufacturing process is large, the size of the tank body is large, and the manufacturing cost is high. In addition, the treatment of large amounts of waste liquid after production is also a cost burden.
In the back-end process, because the hanging basket for accommodating the vertical multiple circuit boards is still adopted to move, water stains after drying are easy to remain on the surfaces of the circuit boards in the drying operation after washing, and the quality of the circuit boards is influenced, so that the circuit boards still need to be subjected to secondary treatment, namely, each circuit board is horizontally conveyed independently to be subjected to washing, blow-drying, drying and other operations, and additional production cost is increased. In combination with the above-described conventional approaches, there are a number of disadvantages that need to be improved upon.
Therefore, the inventor of the present invention considers whether to analyze and improve the conventional process, and expects to propose a better and innovative way to analyze the conventional process, which can be divided into three major parts: the method comprises the following steps of pretreatment, a deposition process and post-treatment, wherein the pretreatment comprises the following steps: cleaning → water washing → microetching → water washing → acid washing → water washing. The deposition process comprises: presoaking → activation → washing → electroless nickel plating → washing → electroless gold plating → washing. The post-treatment comprises the following steps: water washing → drying. The present invention changes the production mode of hanging great amount of circuit boards in one basket, and the present invention adopts the mode of moving circuit boards one by one, including horizontal progressive movement one by one and vertical progressive movement one by one during the deposition process. The improved deposition process of the present invention has no relevant equipment, and the deposition reaction needs long time, such as 20-30 min for depositing nickel and more than 10 min for depositing gold, and if horizontal progressive movement is adopted, the required length of the tank body is huge, the required amount of chemical reaction liquid is very much, and the cost is too high to introduce into production.
Disclosure of Invention
The main objective of the present invention is to provide a chemical deposition method and apparatus, wherein during the chemical deposition operation, the circuit board carried by the carrier moves in the deposition tank in a vertical piece-by-piece production mode, and the metal deposition operation in the deposition reaction tank is completed by the retention time from the initial position to the final position.
It is a further object of the present invention to provide a method and apparatus for chemical deposition using a carrier that is capable of being widely used in the chemical deposition of nickel, gold, copper, silver, and the like.
To achieve the above object, the present invention provides a chemical deposition method using a carrier for wafer-by-wafer production, comprising the steps of: vertically carrying at least one circuit board by using a carrier; the carrier moves the circuit board into a deposition reaction tank for chemical deposition reaction, and the deposition reaction tank is internally provided with an initial position, a plurality of relay positions and a final position in sequence; the carrier is driven by the moving mechanism to move from the initial position, the plurality of relay positions to the final position in sequence, and the metal in the deposition reaction tank is deposited on the circuit board by utilizing the circuit board to wait for a preset time in the deposition reaction tank.
Furthermore, the chemical deposition apparatus of the present invention using the carrier for producing piece by piece includes: the deposition reaction tank is provided with a row of racks with opposite positions on the top surfaces of two tank walls, and each rack is composed of a plurality of unidirectional helical teeth; the carrier comprises a cross rod and two bearing frames, wherein the two bearing frames are symmetrically fixed on the cross rod, the other sides of the two bearing frames are provided with openings, a circuit board is placed in the openings, and the carrier is erected in two opposite one-way skewed teeth from two sides of the cross rod; the moving mechanism is arranged on the outer wall of the deposition reaction tank and is responsible for driving two groups of shifting mechanisms to synchronously generate reciprocating movement and only move for the distance of one unidirectional helical tooth each time; each group of toggle mechanisms comprises a plurality of toggle pieces which can be rotated, two side positions of the cross rod are respectively provided with one toggle piece corresponding to the toggle pieces, when the moving mechanism drives the toggle mechanisms to move forwards, the toggle pieces can push the cross rod to slowly rise to the highest point along the inclined plane of the one-way helical teeth and then fall into the one-way helical teeth of the next stage, and when the moving mechanism drives the toggle mechanisms to move backwards, the toggle pieces can be rotated to release the state of contact with the cross rod.
The invention relates to a chemical deposition method and equipment for continuous production piece by using a carrier, which are different from the traditional production mode of adopting a hanging basket type to carry 20-60 circuit boards at a time, and mainly adopt gradual movement piece by piece to carry out chemical deposition operation, wherein in the pre-dipping and activating operation, the circuit board moves gradually piece by piece horizontally, and in the subsequent chemical deposition reaction, the circuit board moves gradually piece by piece vertically. The design not only can greatly reduce the size of the whole equipment, reduce the cost of the equipment, and has high production speed, but also can maintain good production quality.
In addition, the chemical deposition equipment which uses the carrier to continuously produce piece by piece utilizes the carrier to bear the movement of the circuit board piece by piece in the chemical deposition groove, the carrier falls to the vibration generated by the next-stage one-way helical tooth after moving along the original one-way helical tooth each time, and the bubbles attached to the surface of the circuit board due to deposition reaction can be separated.
The embodiments of the present invention will be described in more detail with reference to the drawings and the reference numerals so that those skilled in the art can implement the embodiments after reading the description.
Drawings
FIG. 1 is a schematic diagram of a conventional electroless nickel/gold process apparatus.
FIG. 2A is a schematic view of a deposition processing tool according to the present invention.
FIG. 2B is a schematic side view of the circuit board moving in the deposition apparatus of the present invention.
FIG. 2C is a schematic top view of the circuit board in the deposition apparatus according to the present invention.
FIG. 3 is a flow chart of the operation of a deposition process tool as developed in the present invention.
FIG. 4 is a flow chart of the chemical deposition method of the present invention using a carrier for continuous piece-by-piece production.
FIG. 5 is a perspective view of a chemical deposition apparatus using a carrier for continuous piece-by-piece production according to the present invention.
FIG. 6 is an exploded view of a chemical deposition apparatus using a carrier for continuous piece-by-piece production according to the present invention.
Fig. 7 is an enlarged perspective view of the carrier of the present invention.
Fig. 8 is a partially enlarged perspective view of the moving mechanism and the toggle mechanism of the present invention.
Fig. 9 is a partial enlarged view (one) of the practical operation of the present invention.
Fig. 10 is a partial enlarged view (ii) illustrating the practical operation of the present invention.
Fig. 11 is a partially enlarged view (iii) illustrating the practical operation of the present invention.
Fig. 12 is a partial enlarged view (iv) of the practical operation of the present invention.
Description of reference numerals:
Chemical nickel deposition tank 110
Chemical immersion gold groove 112
Gantry type crown block 116
Gantry type crown block 117
Chemical nickel deposition tank 23
Rinsing bath 24
Chemical immersion gold groove 25
Conveying mechanism 27
Carrier A
Circuit board B
Recovery circulation transfer mechanism 283
Unidirectional helical tooth 421
Connecting rod 54
Holding rod 55
Retaining tab 551
Moving mechanism 60
Detailed Description
First, an apparatus developed in the deposition process of the present invention will be described. The equipment is used for the chemical nickel palladium gold deposition process, and is arranged between the pretreatment equipment and the post-treatment equipment of which the circuit boards are moved horizontally and gradually piece by piece. The design spirit of the invention is to adopt a mode of moving production piece by piece to finish the deposition operation of the circuit board.
As shown in fig. 2A, the deposition process apparatus of the present invention includes a pre-dip tank 20, an activation tank 21, a turnover mechanism 22, a chemical nickel deposition tank 23, a plurality of rinsing tanks 24, a chemical gold deposition tank 25, a recovery rinsing tank 26, and a conveying mechanism 27, which are sequentially arranged in series. The carrier A is used for carrying a circuit board to carry out relevant chemical deposition operation. Further comprises a first transfer mechanism 281, a second transfer mechanism 282, and a recycling transfer mechanism 283, which are responsible for moving the carrier a to the relevant working tank. In this figure, the movement-related mechanisms are not shown, but only schematically represented by blocks. Referring to fig. 2B and 2C, the circuit board B is in operation in each chamber, wherein the pre-dip tank 20 and the activation tank 21 move horizontally and gradually, and then the turnover mechanism 22 is adjusted from a horizontal state to a vertical state. Then the electroless nickel plating bath 23, the plurality of rinsing baths 24, the electroless gold plating bath 25 and the recovery rinsing bath 26 are all in a vertical state, and finally the circuit board B after deposition is conveyed to the post-treatment equipment in a horizontal state by the conveying mechanism 27.
FIG. 3 is a flow chart of the operation of a deposition process tool as developed by the present invention. Referring to fig. 2A and fig. 2B, the method for operating the apparatus includes the following steps:
step 301: the circuit boards B are fed into the pre-dip tank 20 one by one in a horizontal manner by means of a conveying roller, and pre-dip treatment before reaction is performed.
Step 302: the circuit boards B are fed into the activation tank 21 in a horizontal manner by the conveying rollers, so that a layer of ultra-thin palladium is first replaced on the surface of the bare copper on the circuit board.
Step 303: the circuit board B moves to the turnover mechanism 22, and the circuit board B is sent into the carrier a through the rotary clamping unit 221 of the turnover mechanism 22; the mechanism is used for changing the circuit board B which originally adopts horizontal movement into a vertical type so as to carry out subsequent chemical deposition operation.
Step 304: the carrier A carries the circuit board B into the electroless nickel plating bath 23, moves from the initial position on the left to a plurality of intermediate relay positions, and finally to the final position on the rightmost side, and stays for a time to deposit a layer of nickel on the copper surface of the circuit board B. The movement in the groove is progressive, i.e. only a small distance is moved once, and the movement is carried out for a plurality of times to move from the initial position to the final position.
Step 305: the carrier a is moved up and out of the electroless nickel plating bath 23 by the first transfer mechanism 281, moved rightward by a distance, and then moved down into the water washing bath 24. The circuit board is cleaned in a rinsing bath 24. Referring to fig. 2A, the washing bath 24 includes a plurality of baths, a plurality of washing chambers 241 on the left side and a dripping-off chamber 242 on the right side. In an actual operation mode, the first transfer mechanism 281 lifts 5 carriers a at a time, moves a distance of one chamber after lifting, then descends to allow the carriers a to enter the first operation chamber of the rinsing bath 24, and then repeatedly moves in sequence, in this embodiment, the first transfer mechanism 281 needs to actuate 5 times to allow the carriers a to enter the electroless gold plating bath 25.
Step 306: the first transfer mechanism 281 moves the carrier a in the rinsing bath 24 to the electroless gold plating bath 25, from the initial position on the left to a plurality of intermediate relay positions, and finally to the final position on the right, for a time period to deposit a layer of gold on the copper surface of the circuit board. The moving mode adopts a progressive mode, namely, only a small distance is moved once, and the moving mode needs to move for multiple times to move from the initial position to the final position.
Step 307: the second transfer mechanism 282 moves the carrier A up and out of the electroless gold plating bath 25, moves it a distance to the right and then moves it down and into the recovery washing bath 26 to clean and recover the reaction gold solution carried out by the surface of the circuit board, and the recovery washing bath 26 also includes a plurality of baths. The second transfer mechanism 282 is operated in the same manner as the first transfer mechanism 281.
Step 308: the carrier A is finally moved closer to the conveying mechanism 27 by the second transfer mechanism 282, so that the circuit boards B are moved from the vertical state to the horizontal state one by one to the next operation. Then the post-treatment equipment is subjected to water washing and drying operation. The emptied carrier a is moved to the electroless nickel plating bath 23 through the recycling transfer mechanism 283 for the next processing.
The deposition process equipment and the operation method developed by the invention can greatly reduce the size of the whole equipment, reduce the cost of the equipment, reduce the area of a factory required to be installed and reduce the investment amount of the equipment on the whole. In addition, the water consumption, the chemical reaction liquid consumption and the power consumption can be reduced in the production process, the production cost is reduced, and the product has higher market competitiveness. In addition, the equipment can be more effectively sealed, the leakage of harmful gas in the production process is reduced, and a safer working environment is further provided.
In the above-mentioned apparatus, the electroless nickel plating bath 23 and electroless gold plating bath 25 are chemical deposition methods using carriers to continuously produce one by one, different from the production mode of carrying 20-60 circuit boards once in the basket type, so the present invention designs a chemical deposition apparatus and a method using carriers to continuously produce one by one, which can be applied to the deposition operation of the electroless nickel plating bath 23 and electroless gold plating bath 25.
Referring to fig. 4, a flow chart of a chemical deposition method using carrier wafer-by-wafer production according to the present invention is shown. The method comprises the following steps:
in step 401, a carrier is used to vertically carry at least one circuit board;
in step 402, the carrier moves the circuit board into a deposition chamber for a chemical deposition reaction, the deposition chamber having an initial position, a plurality of relay positions, and a final position;
in step 403, the carrier is moved from the initial position, the plurality of intermediate positions to the final position by the moving mechanism, and the deposition of the metal on the circuit board in the deposition chamber is completed by using the remaining time of the circuit board in the deposition chamber.
In addition, when the moving mechanism drives the carrier to move to two adjacent positions, the carrier vertically falls to the next-level position after moving from the bottommost point to the topmost point of the previous-level position, and the two adjacent positions comprise the initial position and the relay position, two adjacent relay positions and the relay position to the final position. The purpose of this is to generate vibrations, eliminating possible adhering bubbles on the surface of the circuit board, which are generated by the deposition reaction. In addition, vibration can also increase the contact of the reaction liquid and the circuit board, and increase the deposition rate.
The chemical deposition method using the carrier for continuous production piece by piece can design a plurality of specific devices to achieve the purpose, and the embodiment describes one of the devices: fig. 5 and 6 are perspective and exploded views of a chemical deposition apparatus using a carrier for continuous piece-by-piece production according to the present invention. The invention comprises the following steps: a deposition reaction tank 40, a plurality of carriers 50, a moving mechanism 60 and two sets of toggle mechanisms 70.
The deposition reaction tank 40 is a rectangular tank body with an upward opening, a row of racks 42 with opposite positions are respectively arranged on the top surfaces of two tank walls 41 on the long side, and the racks 42 are composed of a plurality of unidirectional helical teeth 421.
As shown in fig. 6, the carrier 50 includes a cross bar 51 and two brackets 52, the two brackets 52 are symmetrically fixed on the cross bar 51, the brackets 52 are partially bent to be hook-shaped, the other side of the two brackets 52 has an opening 53, and the opening 53 can be used for placing a circuit board. In actual operation, the carrier 50 is erected on two opposite unidirectional bevel teeth 421 (see fig. 5) from two sides of the cross bar 51. The carrier 50 further includes a plurality of tie bars 54, the tie bars 54 being transversely coupled between the two brackets 52 to maintain overall rigidity. The carrier 50 further includes a holding rod 55, the holding rod 55 is coupled to the bottom of the two supporting frames 52, and two ends of the holding rod 55 are respectively provided with a vertical holding piece 551. The distance between the two holding pieces 551 is just the width of the maximum size of the circuit board.
The moving mechanism 60 is installed on the outer wall of the deposition reaction tank 40, and is responsible for driving the two sets of toggle mechanisms 70 to synchronously generate reciprocating movement, and only moves by the distance of one unidirectional bevel tooth 421 at a time. The moving mechanism 60 includes a rail frame 61, a frame 62 and a first power member 63. The rail frame 61 is disposed around and fixed to the outer wall of the deposition reaction tank 40, i.e., fixed to the tank wall 41 on both sides. Two sets of rails 611 are fixed on the rail frame 61, and the two sets of rails 611 are respectively located on the outer walls of the two long sides of the deposition reaction tank 40. The frame 62 is a rectangular frame body, the size of which is larger than that of the deposition reaction tank 40, and the frame is sleeved on the periphery of the deposition reaction tank 40 in an assembled state. Referring to fig. 8, the bottom of the frame 62 is provided with a plurality of guide wheels 621, and the guide wheels 621 can run on the rail 611. The first power member 63 is fixed to the rail frame 61, and a retractable actuating rod 631 is further provided to couple with the frame 62, in this embodiment, the first power member 63 is one of a pneumatic cylinder, a hydraulic cylinder, an electric retractable rod, and the like. When the first power member 63 is actuated, the actuating rod 631 extends or retracts, so as to drive the frame 62 to linearly reciprocate.
Two sets of toggle mechanisms 70 are respectively positioned on the outer walls of the two long sides of the frame 62. Each set of the toggle mechanism 70 includes a plurality of toggle members 71, a linkage plate 72, and a second power member 73, each of the toggle members 71 has an upper pivot 711 and a lower pivot 712, the upper pivot 711 is pivotally connected to the outer wall of the frame 62, the lower pivot 712 is pivotally connected to the linkage plate 72, and the linkage plate 72 is driven by the second power member 73 to reciprocate. In this embodiment, the second power member 73 is one of a pneumatic cylinder, an oil cylinder, an electric telescopic rod, and the like. As shown in FIG. 5, the two ends of the cross bar 51 of the carrier 50 extend out of the deposition chamber 40, and have a toggle member 71 corresponding thereto. The shifting member 71 is driven by the moving mechanism 60, and the shifting member 71 pushes the cross bar 51 of the carrier 50 each time, so that the cross bar 51 moves from the one-way helical tooth 421 to the one-way helical tooth 421 at the next stage.
The following description is about the actual operation:
as shown in fig. 9, for convenience of illustration, only an enlarged view of the left front half of the apparatus is provided, and not all of the plurality of carriers 50 are placed in the deposition reaction tank 40. In the beginning of the operation, as described in the previous paragraph, the circuit board is first placed in the rack 52 of the carrier 50, and the carrier 50 is placed in the deposition reaction tank 40, the left and right sections of the cross bar 51 are located on the opposite unidirectional bevel teeth 421, and the two opposite toggle members 71 are located at the two ends of the cross bar 51. In the present embodiment, the leftmost one-way helical tooth 421 is the initial position of the carrier 50 in the deposition reaction tank 40. The subsequent teeth are relay positions.
As shown in fig. 10, the first power member 63 of the moving mechanism 60 is actuated, and the actuating rod 631 is extended, so that the frame 62 is translated in the right direction. The toggle member 71 pivotally connected to the frame 62 is toggled to the right. The cross bar 51 is moved along the lowest point of the one-way helical teeth 421 to the highest point.
As shown in fig. 11, the cross bar 51 falls from the one-way helical tooth 421 of the previous stage to the one-way helical tooth 421 of the next stage. The second power member 73 is actuated to move the linking plate 72 to the right, and due to the pivoting relationship, the top end of the toggle member 71 is greatly shifted to the left, so that the highest position of the top surface of the toggle member 71 is lower than the lowest position of the one-way helical gear 421.
As shown in fig. 12, the actuating rod 631 of the first power member 63 is retracted, which in turn retracts the frame 62 to the starting position. In this process, the shifting member 71 is biased leftwards, so that it does not contact the cross bar 51 during moving.
After the frame 62 is retracted to the initial position, the second power member 73 is actuated again to retract the linkage plate 72 to the original position, so as to assume the state shown in fig. 9, and wait for another carrier 50 to be placed in the deposition reaction tank 40.
In summary, the chemical deposition apparatus of the present invention uses the chemical deposition equipment produced by carriers one by one, and the carriers 50 placed in the deposition reaction tank 40 move one distance of the one-way helical teeth 421 by the reciprocating motion generated by the moving mechanism 60, so that the operation of depositing metal on the circuit board can be completed by the time remaining in the process of moving from the initial position, the plurality of relay positions to the final position step by step. In addition, the vibration generated by the carrier 50 falling to the next stage of unidirectional bevel gear 421 each time can separate the bubbles attached to the surface of the circuit board due to the deposition reaction, and the vibration for more than 10 times can effectively eliminate the bubble attachment situation, and in addition, the continuous vibration can also increase the contact between the reaction liquid and the circuit board and increase the deposition rate, thereby maintaining the production quality and meeting the purpose of using the carrier to produce piece by piece.
The foregoing is illustrative of the preferred embodiment of the present invention and is not to be construed as limiting thereof, since any modification and variation of the present invention without departing from the spirit thereof is intended to be covered thereby.
Claims (9)
1. A chemical deposition method for continuous production by a carrier piece by piece comprises the following steps:
vertically carrying at least one circuit board by using a carrier;
the carrier moves the circuit board into a deposition reaction tank for chemical deposition reaction, and an initial position, a plurality of relay positions and a final position are sequentially arranged in the deposition reaction tank;
the carrier is driven by the moving mechanism to move from the initial position, the plurality of relay positions to the final position in sequence, and the metal in the deposition reaction tank is deposited on the circuit board by utilizing the circuit board to wait for a preset time in the deposition reaction tank;
when the moving mechanism drives the carrier to move to two adjacent positions, the carrier moves from the bottommost point of the previous-stage position to the topmost point and then vertically falls to the next-stage position, and the two adjacent positions comprise the initial position and the relay position, two adjacent relay positions, the relay position and the final position.
2. The chemical deposition method of claim 1, wherein the deposition reaction tank has a row of racks formed on top surfaces of two tank walls, the racks are formed by a plurality of unidirectional helical teeth, the top of the carrier has a cross bar, two ends of the cross bar are respectively located in the two unidirectional helical teeth, and the positions of the unidirectional helical teeth include the initial position, the intermediate positions, and the final position of the deposition reaction tank.
3. A chemical deposition equipment for continuous production piece by using a carrier comprises:
the top surfaces of two opposite tank walls are respectively provided with a row of racks with opposite positions, and each rack is composed of a plurality of unidirectional helical teeth;
a plurality of carriers, including a cross bar and two bearing frames, the two bearing frames are fixed on the cross bar symmetrically, the other side of the two bearing frames is provided with an opening for placing a circuit board, the carriers are erected in two opposite unidirectional skewed teeth from two sides of the cross bar;
the moving mechanism is arranged on the outer wall of the deposition reaction tank and is responsible for driving the two groups of shifting mechanisms to synchronously generate reciprocating movement and only move for the distance of one unidirectional helical tooth each time;
when the moving mechanism drives the shifting mechanism to move forwards, the shifting piece can push the cross rod to slowly rise to the highest point along the inclined plane of the one-way skewed tooth and then fall into the one-way skewed tooth of the next stage, and when the moving mechanism drives the shifting mechanism to move backwards, the shifting piece can be rotated to release the state of contact with the cross rod.
4. The chemical deposition apparatus as claimed in claim 3, wherein the carrier further comprises a plurality of connecting rods, the connecting rods are transversely connected between the two supporting frames to maintain the overall rigidity.
5. The chemical deposition apparatus as claimed in claim 3, wherein the carrier further comprises a holding rod, the holding rod is coupled to the bottom of the two supporting frames, the two ends of the holding rod are respectively provided with a vertical holding piece, and the distance between the two holding pieces is exactly the width of the largest dimension of the circuit board.
6. The chemical deposition apparatus using a carrier for continuous wafer-by-wafer production as claimed in claim 3, wherein the moving mechanism comprises a track frame, a frame and a first power member, the track frame has two sets of tracks fixed to the outer walls of the deposition chamber, the frame is sleeved on the periphery of the deposition chamber, the bottom of the frame has a plurality of guide wheels capable of running on the tracks, and the first power member is connected to the frame and the track frame and is responsible for driving the frame to move linearly back and forth.
7. The chemical deposition apparatus using a carrier for continuous production according to claim 6, wherein the first power member is one of a pneumatic cylinder, an oil hydraulic cylinder, and an electric telescopic rod.
8. The chemical deposition apparatus as claimed in claim 6, wherein the two shifting mechanisms are respectively mounted on the outer walls of the two sides of the frame, each shifting mechanism further comprises a linkage plate and a second power member, each shifting member has an upper pivot point and a lower pivot point, the upper pivot point is pivotally connected to the frame, the lower pivot point is pivotally connected to the linkage plate, and the linkage plate is driven by the second power member to reciprocate.
9. The chemical deposition apparatus using a carrier for continuous production according to claim 8, wherein the second power member is one of a pneumatic cylinder, an oil hydraulic cylinder, and an electric telescopic rod.
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CN112239862B (en) * | 2019-07-16 | 2023-02-28 | 黄信航 | Chemical deposition equipment and method for continuous production piece by piece in horizontal inclined mode |
CN115247262A (en) * | 2021-04-28 | 2022-10-28 | 黄信翔 | Method and system for fabricating electroless nickel/gold plating capable of reducing chemical processing steps |
CN114807911B (en) * | 2022-06-06 | 2024-08-13 | 黄信翔 | Method and system for exchanging carriers by circuit board |
CN115074709B (en) * | 2022-07-25 | 2024-08-13 | 黄信翔 | Carrier storage and transportation device and applied equipment for controlling immersion plating thickness and deposition method |
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CN104480519A (en) * | 2014-11-21 | 2015-04-01 | 广州明铨机械设备有限公司 | Vertical continuous PCB nickel or gold plating equipment |
CN207468728U (en) * | 2017-11-15 | 2018-06-08 | 黄信翔 | Quantity-produced chemical deposition equipment piecewise is adopted with carrier |
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Effective date of registration: 20230607 Address after: No. 29, Xixia Road, Yuexi street, Wuzhong Economic Development Zone, Suzhou, Jiangsu Province Patentee after: Huang Xinxiang Patentee after: Fu Xinmin Patentee after: Haoding environmental protection technology (Hubei) Co.,Ltd. Address before: Taoyuan City, Taiwan, China Patentee before: Huang Xinxiang Patentee before: Huang Xinhang |