CN109768157B - Method for regulating and controlling magnetic performance of two-dimensional magnetic semiconductor material through gate voltage - Google Patents
Method for regulating and controlling magnetic performance of two-dimensional magnetic semiconductor material through gate voltage Download PDFInfo
- Publication number
- CN109768157B CN109768157B CN201810709285.4A CN201810709285A CN109768157B CN 109768157 B CN109768157 B CN 109768157B CN 201810709285 A CN201810709285 A CN 201810709285A CN 109768157 B CN109768157 B CN 109768157B
- Authority
- CN
- China
- Prior art keywords
- dimensional
- semiconductor material
- magnetic semiconductor
- dimensional magnetic
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Hall/Mr Elements (AREA)
Abstract
The invention provides a method for regulating and controlling the magnetic property of a two-dimensional magnetic semiconductor material through gate voltage. Under the Curie temperature of the two-dimensional magnetic semiconductor material, the Fermi level is moved up and down by doping electrons or holes in the two-dimensional magnetic semiconductor material, and the static magnetic moment is changed due to the difference of the density of the states of a majority electron and a minority electron, so that the electrical regulation and control of the magnetic property under different gate voltages are realized. The spin field effect device designed based on the method realizes the regulation and control of the magnetic performance of the two-dimensional magnetic semiconductor by the gate voltage, and creates a new research direction for future ultrathin and lightweight flexible spin field effect devices and two-dimensional stacked multi-iron flexible devices.
Description
Technical Field
The invention belongs to the field of application research of a nano material heterostructure, and particularly relates to a method for regulating and controlling the magnetic property of a two-dimensional magnetic semiconductor material through gate voltage and a spin field effect device based on the method.
Background
The traditional charge transistor changes the Fermi level position of a semiconductor by utilizing the electric field effect generated by an external gate voltage to realize the on-off state of a transistor channel; electrons have an important intrinsic property of spin in addition to carrying charge. However, independent control of the spin of the magnetic metal and the charge of the semiconductor material cannot meet the requirements of information technology development, and the magnetic semiconductor material has the characteristics of intrinsic spin and adjustable density of states, so that the control of the spin and the charge can be realized simultaneously, and a new possibility is provided for the development of the information technology industry in the future. The electrical property and the magnetic property of the magnetic semiconductor are correlated, so that the concentration of a current carrier can be regulated and controlled through an external gate voltage, and then the magnetic property of the magnetic semiconductor is regulated and controlled.
In recent years, a new two-dimensional material represented by graphene is rapidly developed and receives wide attention, the development of a diluted magnetic semiconductor is limited, and the intrinsic two-dimensional magnetic semiconductor receives more and more attention due to the requirements of magnetron sputtering and molecular beam epitaxy on high vacuum and substrate lattice matching. The two-dimensional magnetic semiconductor can be grown in a large area by CVD, a flexible device can be prepared by placing the spin transistor on a flexible substrate, and the photoelectric effect is integrated, so that the two-dimensional magnetic semiconductor has a huge prospect in the future information technology industry.
The invention is based on the two-dimensional magnetic semiconductor material which grows autonomously, selects a few layers of two-dimensional materials to prepare the spin field effect device, is still conducted below the Curie temperature and has the controllability of gate voltage, and simultaneously carries out electron or hole doping on the two-dimensional magnetic semiconductor material, thereby discovering the electrical control of the magnetic property under different gate voltages and opening up a road for the application of the future spintronics.
Disclosure of Invention
The invention aims to provide a method for regulating and controlling the magnetic property of a two-dimensional magnetic semiconductor material through gate voltage. Under the Curie temperature of the two-dimensional magnetic semiconductor material, the Fermi level is moved up and down by doping electrons or holes in the two-dimensional magnetic semiconductor material, and the static magnetic moment is changed due to the difference of the density of the states of a majority electron and a minority electron, so that the electrical regulation and control of the magnetic property under different gate voltages are realized. The spin field effect device designed based on the method realizes the regulation and control of the magnetic performance of the two-dimensional magnetic semiconductor by the gate voltage, and creates a new research direction for the future ultra-thin and lightweight flexible spin field effect device.
The technical scheme of the invention is as follows:
a method for regulating and controlling the magnetic property of a two-dimensional magnetic semiconductor material through gate voltage is characterized by comprising the following steps: under the Curie temperature of the two-dimensional magnetic semiconductor material, the two-dimensional magnetic semiconductor material is subjected to electron or hole doping, so that the electrical regulation and control of the magnetic property under different gate voltages are realized.
The invention relates to a method for regulating and controlling the magnetic property of a two-dimensional magnetic semiconductor material through gate voltage, which is characterized by comprising the following steps: the two-dimensional magnetic semiconductor material is a material which can be used for doping electrons or holes through a gate voltage; the two-dimensional magnetic semiconductor material is Cr2Ge2Te6、CrSiTe3、Cr2Sn2Te6、K2CuF4、FePS3、NiPS3、MnPS3、Fe3GeTe2、CrI3、VSe2Two-dimensional layered materials or two-dimensional atomic crystals. The thickness of the two-dimensional magnetic semiconductor material is 0.5nm-50nm, and the two-dimensional magnetic semiconductor material can be prepared by mechanical cleavage of a single crystal block or chemical growth and the like.
The two-dimensional magnetic semiconductor material is obtained by the following method: chemical vapor deposition, mechanical stripping and cleavage, ultrasonic stripping in solution or chemical stripping.
The invention also provides a spin field effect device based on the method, which is characterized in that the preparation method comprises the following steps:
obtaining a heterojunction by manually stacking a two-dimensional magnetic semiconductor material and other two-dimensional materials; or directly imaging on the two-dimensional magnetic semiconductor material to obtain a device; the pattern transfer method is photolithography (photolithography) or Electron Beam Lithography (EBL).
Wherein:
the material in contact with the two-dimensional magnetic semiconductor in the spin field effect device is one or more of the following materials:
metal (one or more of Cr, Ti, Au, Pd, Sc and Ni) as an electrode, or Graphene (Graphene), boron nitride (h-BN) two-dimensional material, or other two-dimensional material for improving contact and packaging.
The substrate on which the spin field effect device is placed is a Si substrate, a quartz substrate, a mica sheet or a flexible substrate.
The invention has the beneficial effects that:
the invention realizes the electric regulation and control of the magnetic property of the two-dimensional magnetic semiconductor under different gate voltages by doping electrons or holes in the two-dimensional magnetic semiconductor material below the Curie temperature of the two-dimensional magnetic semiconductor material, and opens up a way for the application of the future spintronics.
The realization of the electrical regulation and control of the magnetic property of the two-dimensional magnetic semiconductor opens a new research direction for future ultrathin lightweight and flexible spin field effect devices.
Drawings
FIG. 1 is a schematic diagram of a spin field effect device for regulating and controlling the magnetic property of a two-dimensional magnetic semiconductor material through gate voltage;
FIG. 2 is a schematic diagram of a spin field effect device manufacturing process, a: gluing; b: exposing; c: developing; d: transferring the graph; e: removing the photoresist;
FIG. 3 shows a two-dimensional magnetic semiconductor material prepared by mechanical exfoliation, wherein a is Cr2Ge2Te6(ii) a b is CrSiTe3(ii) a c is Fe3GeTe2；
FIG. 4 Cr-based silicon substrate tuning2Ge2Te6A spin field effect transistor schematic;
FIG. 5 is a graph of output characteristics at 40K with different gate voltages applied;
FIG. 6 is a transfer characteristic curve of + -5V source-drain voltage applied at 40K;
FIG. 7 shows Kerr signals at 40K for different negative gate voltage hole doping;
fig. 8 shows the kerr signal for different forward gate voltage electron dopings at 40K.
Detailed Description
The following examples further illustrate the invention but are not intended to limit the invention thereto.
Example 1
(1) Transferring h-BN onto the viscous polymer by using the viscous polymer (PDMS/PPC double-layer structure) through dry transfer, and then transferring two Graphene (Graphene) onto the h-BN through Van der Waals force of a two-dimensional material;
(2) melting the Graphene/h-BN structure on a blank silicon substrate by using an inversion method, placing the substrate with the obtained stacking structure in a vacuum annealing furnace, carrying out vacuum annealing, and completely volatilizing the polymer pressed at the bottom of the material;
(3) using scope invisible adhesive tape to CrGeTe3Mechanically peeling off, transferring to PDMS, and adding Cr2Ge2Te6Transfer to two Graphene;
(4) the h-BN on the PPC is fused to the CrGeTe by transferring the h-BN onto the viscous polymer (PDMS/PPC bilayer structure)3To obtain h-BN/Cr2Ge2Te6The heterogeneous structure of the/Graphene/h-BN two-dimensional stacking is prepared in a glove box;
(5) patterning, developing and etching graphene by using electron beam exposure, wherein an electron beam evaporation electrode Cr/Au is 5/30nm, and then stripping to obtain a device;
(6) loading the device into a low-temperature vacuum chamber of a Kerr measuring device, and cooling to 40K;
(7) manually pushing the gate voltage to-80V to ensure that the Si substrate has no leakage, sweeping the output characteristic curve in the range of + -5V (FIG. 5, the output characteristic curve above 0V is not marked in the figure because the gate voltage is 0V and the current is basically cut off), and sweeping the loop curve in the range of + -150mT (FIGS. 7 and 8);
(8) repeating the step (7), and measuring output characteristic curves of-70V, -60V, -40V and 0V and a loop curve;
(9) the transfer characteristics were swept in the range of + -80V at +5V and-5V source drain voltage, respectively (FIG. 6).
Example 2
The difference from example 1 is that: and (3) the substrate in the step (2) is a quartz substrate.
The obtained spin field effect device can realize the electrical regulation and control of the magnetic property under different gate voltages.
Example 3
The difference from example 1 is that: the two-dimensional magnetic material in the step (3) is Cr2Sn2Te6。
The obtained spin field effect device can realize the electrical regulation and control of the magnetic property under different gate voltages.
Example 4
The difference from example 1 is that: step (3) chemically vapor-deposited Cr2Ge2Te6Transfer to PDMS and then Cr on PDMS2Ge2Te6Transfer to two Graphene.
The obtained spin field effect device can realize the electrical regulation and control of the magnetic property under different gate voltages.
Example 5
The difference from example 1 is that: step (5) exposing graphene and Cr by using electron beams2Ge2Te6Is patterned with Cr2Ge2Te6The metal electrode and the graphene are in direct contact.
The obtained spin field effect device can realize the electrical regulation and control of the magnetic property under different gate voltages.
Example 6
The difference from example 1 is that: and (4-9) coupling the interfaces of various ferromagnetic or antiferromagnetic or ferroelectric layered materials to obtain the artificially stacked two-dimensional multiferroic heterojunction. Therefore, low-dimensional flexible devices such as memristors with adjustable gate voltage are achieved.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (3)
1. A spin field effect device, characterized by: under the Curie temperature of the two-dimensional magnetic semiconductor material, performing electron or hole doping on the two-dimensional magnetic semiconductor material to obtain the spin field effect transistor with the double bipolar adjustable characteristic;
the two-dimensional magnetic semiconductor material is Cr2Sn2Te6A two-dimensional layered material or a two-dimensional atomic crystal;
the preparation method of the spin field effect device comprises the following steps:
obtaining a heterojunction by manually stacking a two-dimensional magnetic semiconductor material and other two-dimensional materials; or directly imaging on the two-dimensional magnetic semiconductor material to obtain a device; the pattern transfer mode is photoetching or electron beam exposure;
the material in contact with the two-dimensional magnetic semiconductor in the spin field effect device is one or more of the following materials:
graphene, boron nitride two-dimensional materials, or other two-dimensional materials that improve contact and encapsulation.
2. The spin field effect device of claim 1, wherein: the thickness of the two-dimensional magnetic semiconductor material is 0.5nm-50 nm.
3. The spin field effect device of claim 1, wherein the two-dimensional magnetic semiconductor material is obtained by: chemical vapor deposition, mechanical stripping and cleavage, ultrasonic stripping in solution or chemical stripping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810709285.4A CN109768157B (en) | 2018-07-02 | 2018-07-02 | Method for regulating and controlling magnetic performance of two-dimensional magnetic semiconductor material through gate voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810709285.4A CN109768157B (en) | 2018-07-02 | 2018-07-02 | Method for regulating and controlling magnetic performance of two-dimensional magnetic semiconductor material through gate voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109768157A CN109768157A (en) | 2019-05-17 |
| CN109768157B true CN109768157B (en) | 2021-12-10 |
Family
ID=66449171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810709285.4A Active CN109768157B (en) | 2018-07-02 | 2018-07-02 | Method for regulating and controlling magnetic performance of two-dimensional magnetic semiconductor material through gate voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109768157B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110294463B (en) * | 2019-07-26 | 2022-07-08 | 华东师范大学 | Transition group element doped room-temperature ferromagnetic two-dimensional material and preparation method thereof |
| CN110703167B (en) * | 2019-10-23 | 2021-10-22 | 中国人民解放军军事科学院国防科技创新研究院 | Obtaining Fe3GeTe2Method of magnetostriction coefficient of |
| CN111593402A (en) * | 2020-07-06 | 2020-08-28 | 李焱 | Two-dimensional ferromagnetic material Fe3GeTe2 and Co-doped Fe3-xCoxGeTe2 single crystal growth method |
| CN112921297B (en) * | 2021-01-19 | 2022-03-15 | 电子科技大学 | CVD preparation method of ferromagnetic two-dimensional material FeGeTe |
| CN113667934B (en) * | 2021-07-20 | 2023-04-28 | 杭州电子科技大学 | Magnetic controllable two-dimensional magnetic composite material and preparation method thereof |
| CN113990724B (en) * | 2021-10-19 | 2024-03-12 | 山西大学 | Full two-dimensional vacuum tube and preparation method thereof |
| CN114361289B (en) * | 2022-01-10 | 2024-03-15 | 北京工业大学 | Construction method of self-driven ultra-fast photoelectric detector based on van der Waals metal electrode |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315255A (en) * | 2010-07-07 | 2012-01-11 | 中国科学院物理研究所 | Spin field effect transistor and magnetic memory thereof |
| CN108767107A (en) * | 2018-06-01 | 2018-11-06 | 厦门大学 | A kind of two-dimentional spin electric device and preparation method thereof of electric field regulation and control |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150325278A1 (en) * | 2014-03-14 | 2015-11-12 | Uwe Bauer | Voltage-controlled solid-state magnetic devices |
| US20150364676A1 (en) * | 2014-06-11 | 2015-12-17 | T3Memory, Inc. | Three-terminal spin transistor magnetic random access memory and the method to make the same |
-
2018
- 2018-07-02 CN CN201810709285.4A patent/CN109768157B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315255A (en) * | 2010-07-07 | 2012-01-11 | 中国科学院物理研究所 | Spin field effect transistor and magnetic memory thereof |
| CN108767107A (en) * | 2018-06-01 | 2018-11-06 | 厦门大学 | A kind of two-dimentional spin electric device and preparation method thereof of electric field regulation and control |
Non-Patent Citations (1)
| Title |
|---|
| Electric-field_control_of_magnetism_in_few-layered van der Walls magnet;Zhijie Wang等;《cond-mat.mes-hall》;20180217;第1-7页，图1-4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109768157A (en) | 2019-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109768157B (en) | Method for regulating and controlling magnetic performance of two-dimensional magnetic semiconductor material through gate voltage | |
| US8778716B2 (en) | Integrated circuits based on aligned nanotubes | |
| Chen et al. | Fermi-level depinning of 2D transition metal dichalcogenide transistors | |
| Lee et al. | Heterostructures based on inorganic and organic van der Waals systems | |
| CN112582542B (en) | Monomolecular field effect transistor based on two-dimensional van der Waals heterostructure and preparation method thereof | |
| CN110335819A (en) | A kind of regulation method of two dimension Transition-metal dichalcogenide energy valley polarization characteristic | |
| CN111969058B (en) | Molybdenum disulfide field effect transistor and preparation method and application thereof | |
| CN108987483B (en) | MoTe2Field effect transistor and preparation method and application thereof | |
| CN114388620A (en) | Two-dimensional van der waals ferroelectric tunneling junction memory based on alpha-indium selenide nanosheets and construction method and application thereof | |
| CN110634958B (en) | Semiconductor thin film field effect transistor made of unstable two-dimensional material and preparation method thereof | |
| CN113224143B (en) | Junction field effect transistor based on tungsten disulfide/gallium antimonide and preparation method thereof | |
| CN112447858B (en) | Junction field effect transistor and preparation method thereof | |
| CN114566544A (en) | High-mobility spin field effect transistor and preparation method thereof | |
| CN111430536B (en) | Homojunction magnetoresistive device of magnetic two-dimensional semiconductor and preparation method and application thereof | |
| CN107128900A (en) | A kind of method for preparing fullerene/heterojunction semiconductor | |
| Dayeh et al. | Integration of vertical InAs nanowire arrays on insulator-on-silicon for electrical isolation | |
| Hattori et al. | Fabrication of the electric double layer transistor with (La, Pr, Ca) MnO3 nanowall wire channel | |
| CN110828652A (en) | Molybdenum disulfide/graphene heterojunction device | |
| CN107527949A (en) | Based on Cr doping 4H SiC substrate hetero-junctions spin fets and preparation method thereof | |
| CN111883641B (en) | Room temperature heat-induced spin polarization current source and implementation method thereof | |
| CN110323277A (en) | Field effect transistor and preparation method thereof | |
| Zou et al. | Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric | |
| CN110620043B (en) | Preparation method of semiconductor thin film field effect transistor made of unstable two-dimensional material | |
| CN117080257A (en) | Double-junction field effect transistor and preparation method thereof | |
| CN118016590A (en) | Method for remotely doping two-dimensional material and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |