CN109768099A - 一种具有低点缺陷密度的二类超晶格光探测器 - Google Patents

一种具有低点缺陷密度的二类超晶格光探测器 Download PDF

Info

Publication number
CN109768099A
CN109768099A CN201910039014.7A CN201910039014A CN109768099A CN 109768099 A CN109768099 A CN 109768099A CN 201910039014 A CN201910039014 A CN 201910039014A CN 109768099 A CN109768099 A CN 109768099A
Authority
CN
China
Prior art keywords
gasb
inas
layers
optical detector
class superlattices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910039014.7A
Other languages
English (en)
Inventor
詹健龙
宋禹析
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Taoteng Infrared Technology Co Ltd
Original Assignee
Zhejiang Taoteng Infrared Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Taoteng Infrared Technology Co Ltd filed Critical Zhejiang Taoteng Infrared Technology Co Ltd
Priority to CN201910039014.7A priority Critical patent/CN109768099A/zh
Publication of CN109768099A publication Critical patent/CN109768099A/zh
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

本发明公开了一种具有低点缺陷密度的二类超晶格光探测器，所述二类超晶格光探测器为InAs/GaSb二类超晶格光探测器，所述InAs/GaSb二类超晶格光探测器的吸收区包括有InAs层和GaSb层，GaSb层中凝入有Bi元素。本发明通过在分子束外延生长GaSb层时凝入一定量的Bi元素，能够有效减少吸收区中的空位或者反位存在，降低探测器的缺陷密度，使得SRH复合减少，器件暗电流下降，载流子的扩散速度增加，器件的量子效率增加，提高InAs/GaSb T2SL光探测器的性能。

Description

一种具有低点缺陷密度的二类超晶格光探测器
技术领域
本发明属于二类超晶格光探测器技术领域，具体涉及一种具有低点缺陷密度的二类超晶格光探测器。
背景技术
分子束外延(MBE)生长的GaSb中主要缺陷为Ga空位(bulk growth方法中主要是Ga反位)，研究表明这些Ga空位是现有二类超晶格材料中SRH电流的主要来源和少数载流子寿命的主要限制因素。因此，如果能够减少Ga空位的产生，能够进一步提高二类超晶格光探测器的性能。
发明内容
为解决上述技术问题，本发明采用的技术方案是：一种具有低点缺陷密度的二类超晶格光探测器，所述二类超晶格光探测器为InAs/GaSb二类超晶格光探测器，所述InAs/GaSb二类超晶格光探测器的吸收区包括有InAs层和GaSb层，GaSb层中凝入有Bi元素。
吸收区的具体结构为7ML InAs/10ML GaSb0.94Bi0.06。
本发明的有益效果是：本发明通过在分子束外延生长GaSb层时通过凝入一定量的Bi元素，能够有效减少吸收区中的空位或者反位存在，降低探测器的缺陷密度，使得SRH复合减少，器件暗电流下降，载流子的扩散长度增加，器件的量子效率增加，提高InAs/GaSb二类超晶格光探测器的性能。
具体实施方式
一种具有低点缺陷密度的二类超晶格光探测器，所述二类超晶格光探测器为InAs/GaSb二类超晶格光探测器，所述InAs/GaSb二类超晶格光探测器的吸收区包括有InAs层和GaSb层，GaSb层中凝入有Bi元素。
吸收区的具体结构为7ML InAs/10ML GaSb0.94Bi0.06。其中ML为原子层。
以上详细描述了本发明的较佳具体实施例，应当理解，本领域的普通技术人员无需创造性劳动就可以根据本发明的构思做出诸多修改和变化，因此，凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。

Claims (2)

1.一种具有低点缺陷密度的二类超晶格光探测器，其特征在于，所述二类超晶格光探测器为InAs/GaSb二类超晶格光探测器，所述InAs/GaSb二类超晶格光探测器的吸收区包括有InAs层和GaSb层，GaSb层中凝入有Bi元素。
2.如权利要求1所述的具有低点缺陷密度的二类超晶格光探测器，其特征在于，所述吸收区的具体结构为7ML InAs/10ML GaSb0.94Bi0.06。
CN201910039014.7A 2019-01-16 2019-01-16 一种具有低点缺陷密度的二类超晶格光探测器 Pending CN109768099A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910039014.7A CN109768099A (zh) 2019-01-16 2019-01-16 一种具有低点缺陷密度的二类超晶格光探测器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910039014.7A CN109768099A (zh) 2019-01-16 2019-01-16 一种具有低点缺陷密度的二类超晶格光探测器

Publications (1)

Publication Number Publication Date
CN109768099A true CN109768099A (zh) 2019-05-17

Family

ID=66454066

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910039014.7A Pending CN109768099A (zh) 2019-01-16 2019-01-16 一种具有低点缺陷密度的二类超晶格光探测器

Country Status (1)

Country Link
CN (1) CN109768099A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021062589A1 (zh) * 2019-09-30 2021-04-08 嘉兴风云科技有限责任公司 一种能够缩减层厚度的二类超晶格光探测器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569521A (zh) * 2012-02-02 2012-07-11 中国科学院半导体研究所 钝化InAs/GaSb二类超晶格红外探测器制作方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102569521A (zh) * 2012-02-02 2012-07-11 中国科学院半导体研究所 钝化InAs/GaSb二类超晶格红外探测器制作方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHUMIN WANG 等: "Bismuth Incorporation and Lattice Contraction in GaSbBi and InSbBi》", 《2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021062589A1 (zh) * 2019-09-30 2021-04-08 嘉兴风云科技有限责任公司 一种能够缩减层厚度的二类超晶格光探测器

Similar Documents

Publication Publication Date Title
Steenbergen et al. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
US9093581B2 (en) Structures and devices based on boron nitride and boron nitride-III-nitride heterostructures
CN105789364B (zh) 一种无铝型ii类超晶格长波双势垒红外探测器
US20130292685A1 (en) Structures and Devices Based on Boron Nitride and Boron Nitride-III-Nitride Heterostructures
Lawrence et al. Exciton tunneling revealed by magnetically tuned interwell coupling in semiconductor double quantum wells
CN109768099A (zh) 一种具有低点缺陷密度的二类超晶格光探测器
WO2018203984A1 (en) Ultraviolet light emitting diode with tunnel junction
Long et al. Electroluminescence from ZnO-nanorod-based double heterostructured light-emitting diodes
Kuo et al. Tunneling current through a quantum dot with strong electron-phonon interaction
Latyshev et al. Subgap collective tunneling and its staircase structure in charge density waves
Chen et al. Electric field control of spin polarity in spin injection into InGaAs quantum dots from a tunnel-coupled quantum well
Shen et al. Tamm states and donors at InAs/AlSb interfaces
Zhang et al. Charge-tunable indium gallium nitride quantum dots
Etou et al. Efficient room-temperature operation of a quantum dot spin-polarized light-emitting diode under high-bias conditions
Mar et al. Bias-controlled single-electron charging of a self-assembled quantum dot in a two-dimensional-electron-gas-based n-i-schottky diode
CN102629637B (zh) 一种含量子级联结构的波长上转换器件
Madkour et al. Environmental impact of nanotechnology and novel applications of nano materials and nano devices
CN108417661A (zh) 一种基于带间级联结构的长波超晶格红外探测器
Holonyak Jr et al. Photosensitive Impurity-Assisted Tunneling (Au, 77° K) IN GaAs Tunnel Diodes
CN208904041U (zh) 基于带间级联结构的长波超晶格红外探测器
CN109768098A (zh) 一种能够缩减吸收区厚度的二类超晶格光探测器
CN109801993A (zh) 一种具有强制p型表面态的InAs/GaSb(Bi)二类超晶格光探测器
CN105742190A (zh) ZnO基不对称量子阱隧穿同质p-n二极管的制备方法
CN115911153A (zh) 一种红外探测器及其制备方法
Bastard et al. Electronic properties of Ga (In) As-based heterostructures

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20190517