CN109765719A - The production method and substrate of substrate - Google Patents

The production method and substrate of substrate Download PDF

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Publication number
CN109765719A
CN109765719A CN201910219080.2A CN201910219080A CN109765719A CN 109765719 A CN109765719 A CN 109765719A CN 201910219080 A CN201910219080 A CN 201910219080A CN 109765719 A CN109765719 A CN 109765719A
Authority
CN
China
Prior art keywords
electrode layer
substrate
black matrix
area
viewing area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910219080.2A
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Chinese (zh)
Inventor
浠荤淮
任维
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201910219080.2A priority Critical patent/CN109765719A/en
Priority to PCT/CN2019/081574 priority patent/WO2020186565A1/en
Publication of CN109765719A publication Critical patent/CN109765719A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1337Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells

Abstract

The present invention provides the production method and substrate of a kind of substrate.The production method of substrate of the invention is by the way that the black matrix" being located in virtual area and electrode layer to be etched, at least one is formed through black matrix" and the groove of electrode layer, it is subsequent on the electrode layer and underlay substrate be coated with orientation coating solution when, since the landform for being located at the film layer structure of the virtual area is similar to the landform of the film layer structure of viewing area, it is identical can to guarantee that the thickness of alignment film and the thickness of the alignment film of the virtual area positioned at the viewing area level off to, to improve the film thickness homogeneity of alignment film.Substrate of the invention is located at the thickness of alignment film of the viewing area and the thickness of the alignment film of the virtual area levels off to identical, and the film thickness homogeneity of alignment film is good.

Description

The production method and substrate of substrate
Technical field
The present invention relates to field of display technology more particularly to the production methods and substrate of a kind of substrate.
Background technique
Thin film transistor (TFT) (Thin Film Transistor, TFT) is current liquid crystal display device (Liquid Crystal Display, LCD) and active matrix drive type organic electroluminescence display device and method of manufacturing same (Active Matrix Organic Light- Emitting Diode, AMOLED) in main driving element, the display performance of direct relation panel display apparatus.
Liquid crystal display on existing market is largely backlight liquid crystal display comprising liquid crystal display panel and back Optical mode group (backlight module).The working principle of liquid crystal display panel is in thin-film transistor array base-plate (Thin Film Transistor Array Substrate, TFT Array Substrate) and colored filter (Color Filter, CF) liquid crystal molecule is poured between substrate, and apply pixel voltage and common voltage respectively on two plate bases, pass through The direction of rotation of the electric field controls liquid crystal molecule formed between pixel voltage and common voltage transmits the light of backlight module Picture is generated out.Liquid crystal display panel moulding process generally comprises: leading portion array (Array) processing procedure (film, yellow light, etching And stripping), middle section is at box (Cell) processing procedure (TFT substrate is bonded with CF substrate) and back segment module group assembling processing procedure (driving IC and print Printed circuit board pressing).Wherein, leading portion Array processing procedure mainly forms TFT substrate, in order to control the movement of liquid crystal molecule;In Section Cell processing procedure mainly adds liquid crystal between TFT substrate and CF substrate;Back segment module group assembling processing procedure mainly drives IC pressure The integration with printed circuit board is closed, and then drives liquid crystal molecule rotation, shows image.
The LCD panel of the overwhelming majority uses polyimides (PI) for liquid crystal orienting film at present, coating of the PI in LCD panel And film thickness homogeneity directly affects the orientation situation of liquid crystal, influence PI coating primary association be PI material solvent characteristic and In the design of land of LCD panel.
For example, the virtual region (dummy) design on CF substrate is uniform, landform is flat, has with the design of the display area (AA) The film layer structure pattern of difference, the area AA is complicated, causes the PI distributing inhomogeneity in the region dummy Yu the region AA, PI film thickness difference arrives 150A~300A, it will cause the PI in the region dummy and the region AA to generate difference to the pre-tilt angle of Formation of liquid crystals respectively, influences to show Show quality.
Summary of the invention
The purpose of the present invention is to provide a kind of production methods of substrate, and the film thickness homogeneity of alignment film can be improved.
The object of the invention is also to provide a kind of substrate, the film thickness homogeneity of alignment film is good.
To achieve the above object, the present invention provides a kind of production method of substrate, include the following steps:
Step S1, underlay substrate is provided, forms a ring box glue on the underlay substrate;The underlay substrate includes display Area and the virtual area between the viewing area and frame glue;
Step S2, the black matrix" being located in the viewing area and virtual area is formed on the underlay substrate;In black Electrode layer is formed on matrix;
Step S3, the black matrix" and electrode layer that are located in the virtual area are etched, form at least one and runs through The groove of black matrix" and electrode layer;
Step S4, the coating orientation coating solution on the electrode layer and underlay substrate, formation covering electrode layer and groove Alignment film.
The specific steps of the step S2 are as follows: formed and be located in the viewing area and virtual area on the underlay substrate Black-matrix material layer carries out patterned process to the black-matrix material layer being located in the viewing area by light shield, obtains Black matrix".
In the step S3, it is etched, is obtained using black matrix" of the laser positioning in the virtual area and electrode layer To at least one through black matrix" and the groove of electrode layer.
In the step S3, before laser is etched, in the black matrix" and electrode layer being located in the virtual area On cross, formed at least one etching line, the laser along etching line to be located at the virtual area in black matrix" And electrode layer is etched.
The line width of the etching line is 50-70um.
The region where electrode layer in viewing area, and in the electrode layer in virtual area and in viewing area Electrode layer connection part where region be high-voltage region;
Region where the part not connecting with the electrode layer being located in viewing area in the electrode layer in virtual area is Low-voltage region.
The width of the groove is 50-70um.
The present invention also provides a kind of substrates, comprising: underlay substrate, the frame glue on the underlay substrate, be set to it is described The black matrix" that surrounds on underlay substrate and by the frame glue, the electrode layer on the black matrix" and it is set to the electricity Alignment film on the layer of pole;
The underlay substrate includes viewing area and the virtual area between the viewing area and frame glue;On the substrate Run through the groove of the black matrix" and electrode layer that are located in the virtual area at least one;The alignment film covers the electricity Pole layer and groove.
The region where electrode layer in viewing area, and in the electrode layer in virtual area and in viewing area Electrode layer connection part where region be high-voltage region;
Region where the part not connecting with the electrode layer being located in viewing area in the electrode layer in virtual area is Low-voltage region.
The width of the groove is 50-70um.
Beneficial effects of the present invention: the production method of substrate of the invention pass through by be located at virtual area in black matrix" and Electrode layer is etched, and forms at least one groove for running through black matrix" and electrode layer, subsequent in the electrode layer and substrate When being coated with orientation coating solution on substrate, due to being located at the landform of the film layer structure of the virtual area and the film layer structure of viewing area Landform is similar, it is ensured that the thickness positioned at the thickness and the alignment film of the virtual area of the alignment film of the viewing area levels off to It is identical, to improve the film thickness homogeneity of alignment film.Substrate of the invention is located at thickness and the institute of the alignment film of the viewing area The thickness for stating the alignment film of virtual area levels off to identical, and the film thickness homogeneity of alignment film is good.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the flow chart of the production method of substrate of the invention;
Fig. 2 is the schematic diagram of the production method step S1 of substrate of the invention;
Fig. 3 to Fig. 5 is the schematic diagram of the production method step S2 of substrate of the invention;
Fig. 6 to Fig. 7 is the schematic diagram of the production method step S3 of substrate of the invention;
Fig. 8 is the schematic diagram of the production method step S4 of substrate of the invention and the schematic diagram of substrate of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention Example and its attached drawing are described in detail.
Fig. 1 to Fig. 8 is please referred to, the present invention provides a kind of production method of substrate, includes the following steps:
Step S1, referring to Fig. 2, providing underlay substrate 10, a ring box glue 20 is formed on the underlay substrate 10;It is described Underlay substrate 10 includes viewing area 11 and the virtual area 12 between the viewing area 11 and frame glue 20;
Step S2, Fig. 3 to Fig. 5 is please referred to, is formed on the underlay substrate 10 and is located at the viewing area 11 and virtual area Black matrix" 30 in 12;Electrode layer 40 is formed on black matrix" 30;
Step S3, Fig. 6 to Fig. 7 is please referred to, the black matrix" 30 and electrode layer 40 that are located in the virtual area 12 are carried out Etching forms at least one through black matrix" 30 and the groove 41 of electrode layer 40;
Step S4, referring to Fig. 8, being coated with orientation coating solution on the electrode layer 40 and underlay substrate 10, covering is formed The alignment film 50 of electrode layer 40 and groove 41.
It should be noted that the present invention loses the black matrix" 30 being located in the virtual area 12 and electrode layer 40 It carves, forms at least one groove 41 for running through black matrix" 30 and electrode layer 40, it is subsequent in the electrode layer 40 and underlay substrate When being coated with orientation coating solution on 10, due to being located at the landform of the film layer structure of the virtual area 12 and the film layer structure of viewing area 12 Landform it is similar, it is ensured that positioned at the thickness of the alignment film 50 of the viewing area 11 and the alignment film 50 of the virtual area 12 Thickness level off to it is identical, to improve the film thickness homogeneity of alignment film 50.
Specifically, Fig. 3 to Fig. 5 is please referred to, the specific steps of the step S2 are as follows: form position on the underlay substrate 10 Black-matrix material layer 30 ' in the viewing area 11 and virtual area 12, by light shield in the viewing area 11 Black-matrix material layer 30 ' carries out patterned process, obtains black matrix" 30.At this point, being located at the black in the virtual area 12 The landform of matrix 30 is flat.
Specifically, in the step S3, since laser can not only be etched electrode layer 40, moreover it is possible to black matrix" 30 It is etched, therefore is etched using black matrix" 30 and electrode layer 40 of the laser positioning in the virtual area 12, changed The landform of black matrix" 30 in virtual area 12 makes it become complicated, similar to the landform of black matrix" 30 of viewing area 12.
Further, referring to Fig. 6, in the step S3, before laser is etched, it is being located at the virtual area 12 In black matrix" 30 and electrode layer 40 on cross, formed at least one etching line 42, the laser is along etching line 42 The black matrix" 30 and electrode layer 40 that are located in the virtual area 12 are etched.
Specifically, the line width of the etching line 42 is 50-70um.
Specifically, 40 place of the electrode layer in viewing area 11 will be located at groove 41 (namely etching line 42) for boundary Region, and in the electrode layer 40 in virtual area 12 with the part that connect of electrode layer 40 being located in viewing area 11 where area Domain is divided into high-voltage region, will be located at virtual area 12 in electrode layer 40 in not be located at viewing area 11 in electrode layer 40 Region division where the part of connection is low-voltage region, subsequent to apply high electricity to the electrode layer of high-voltage region 40 respectively Pressure applies low-voltage to the electrode layer 40 of low-voltage region, to complete the orientation of alignment film 50.
Specifically, the material of the electrode layer 40 is ITO (tin indium oxide).
Specifically, the width of the groove 41 is 50-70um.
Specifically, the material of the alignment film 50 is PI.
Specifically, the quantity of the groove 41 can be arranged according to the demand of the PI solution levelability of actual product.
Referring to Fig. 8, the production method based on aforesaid substrate, the present invention also provides a kind of substrates, comprising: underlay substrate 10, the frame glue 20 on the underlay substrate 10, the black surrounded on the underlay substrate 10 and by the frame glue 20 Matrix 30, the electrode layer 40 on the black matrix" 30 and the alignment film 50 on the electrode layer 40;
The underlay substrate 10 includes viewing area 11 and the virtual area 12 between the viewing area 11 and frame glue 20; Run through the groove 41 of the black matrix" 30 and electrode layer 40 that are located in the virtual area 12 on the substrate at least one;Institute It states alignment film 50 and covers the electrode layer 40 and groove 41.
It should be noted that running through the black square being located in the virtual area 12 at least one on substrate of the invention The groove 41 of battle array 30 and electrode layer 40 makes the landform of the film layer structure positioned at the virtual area 12 and the film layer structure of viewing area 12 Landform it is similar, it is ensured that positioned at the thickness of the alignment film 50 of the viewing area 11 and the alignment film 50 of the virtual area 12 Thickness level off to it is identical, to improve the film thickness homogeneity of alignment film 50.
Specifically, the forming method of the black matrix" 30 are as follows: formed on the underlay substrate 10 and be located at the display Black-matrix material floor 30 ' in area 11 and virtual area 12, by light shield to the black matrix" material being located in the viewing area 11 The bed of material 30 ' carries out patterned process, obtains black matrix" 30.At this point, the ground for the black matrix" 30 being located in the virtual area 12 Shape is flat.
Specifically, the forming method of the groove 41 are as follows: since laser can not only be etched electrode layer 40, moreover it is possible to right Black matrix" 30 is etched, therefore black matrix" 30 and electrode layer 40 of the laser positioning in the virtual area 12 is used to carry out Etching changes the landform of the black matrix" 30 in virtual area 12, so that it is become complicated, the ground with the black matrix" 30 of viewing area 12 Shape is similar.
Further, before laser is etched, in the black matrix" 30 and electrode layer being located in the virtual area 12 It crosses on 40, forms at least one etching line 42, the laser is along etching line 42 in the virtual area 12 Black matrix" 30 and electrode layer 40 are etched.
Specifically, the line width of the etching line 42 is 50-70um.
Specifically, 40 place of the electrode layer in viewing area 11 will be located at groove 41 (namely etching line 42) for boundary Region, and in the electrode layer 40 in virtual area 12 with the part that connect of electrode layer 40 being located in viewing area 11 where area Domain is divided into high-voltage region, will be located at virtual area 12 in electrode layer 40 in not be located at viewing area 11 in electrode layer 40 Region division where the part of connection is low-voltage region, subsequent to apply high electricity to the electrode layer of high-voltage region 40 respectively Pressure applies low-voltage to the electrode layer 40 of low-voltage region, to complete the orientation of alignment film 50.
Specifically, the material of the electrode layer 40 is ITO (tin indium oxide).
Specifically, the width of the groove 41 is 50-70um.
Specifically, the material of the alignment film 50 is PI.
Specifically, the quantity of the groove 41 can be arranged according to the demand of the PI solution levelability of actual product.
In conclusion the production method of substrate of the invention pass through by be located at virtual area in black matrix" and electrode layer into Row etching forms at least one groove for running through black matrix" and electrode layer, subsequent to apply on the electrode layer and underlay substrate When cloth orientation coating solution, the landform and the landform phase of the film layer structure of viewing area of the film layer structure due to being located at the virtual area Seemingly, it is ensured that level off to positioned at the thickness of the alignment film of the viewing area and the thickness of the alignment film of the virtual area it is identical, To improve the film thickness homogeneity of alignment film.Substrate of the invention is located at the thickness of the alignment film of the viewing area and described virtual The thickness of the alignment film in area levels off to identical, and the film thickness homogeneity of alignment film is good.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention Protection scope.

Claims (10)

1. a kind of production method of substrate, which comprises the steps of:
Step S1, underlay substrate (10) are provided, forms a ring box glue (20) on the underlay substrate (10);The underlay substrate It (10) include viewing area (11) and the virtual area (12) between the viewing area (11) and frame glue (20);
Step S2, the black matrix" being located in the viewing area (11) and virtual area (12) is formed on the underlay substrate (10) (30);Electrode layer (40) are formed on black matrix" (30);
Step S3, the black matrix" (30) and electrode layer (40) that are located in the virtual area (12) are etched, are formed at least One through black matrix" (30) and the groove (41) of electrode layer (40);
Step S4, it is coated with orientation coating solution on the electrode layer (40) and underlay substrate (10), forms covering electrode layer (40) And the alignment film (50) of groove (41).
2. the production method of substrate as described in claim 1, which is characterized in that the specific steps of the step S2 are as follows: in institute The black-matrix material layer (30 ') for being formed and being located in the viewing area (11) and virtual area (12) on underlay substrate (10) is stated, is led to It crosses light shield and patterned process is carried out to the black-matrix material layer (30 ') being located in the viewing area (11), obtain black matrix" (30)。
3. the production method of substrate as described in claim 1, which is characterized in that in the step S3, using laser positioning in Black matrix" (30) and electrode layer (40) in the virtual area (12) are etched, and obtain at least one through black matrix" (30) and the groove (41) of electrode layer (40).
4. the production method of substrate as claimed in claim 3, which is characterized in that in the step S3, be etched in laser Before, it crosses on the black matrix" (30) and electrode layer (40) being located in the virtual area (12), forms at least one Etching line (42), the laser is along etching line (42) to the black matrix" (30) and electrode layer being located in the virtual area (12) (40) it is etched.
5. the production method of substrate as claimed in claim 4, which is characterized in that the line width of the etching line (42) is 50- 70um。
6. the production method of substrate as described in claim 1, which is characterized in that the electrode layer (40) being located in viewing area (11) The region at place, and connect in the electrode layer (40) in virtual area (12) with the electrode layer (40) being located in viewing area (11) Part where region be high-voltage region;
The part not connect with the electrode layer (40) being located in viewing area (11) in the electrode layer (40) in virtual area (12) The region at place is low-voltage region.
7. the production method of substrate as described in claim 1, which is characterized in that the width of the groove (41) is 50-70um.
8. a kind of substrate characterized by comprising underlay substrate (10), be set to the underlay substrate (10) on frame glue (20), On the underlay substrate (10) and by the frame glue (20) surround black matrix" (30), be set to the black matrix" (30) On electrode layer (40) and be set to the electrode layer (40) on alignment film (50);
The underlay substrate (10) includes viewing area (11) and virtual between the viewing area (11) and frame glue (20) Area (12);Run through the black matrix" (30) and electrode layer being located in the virtual area (12) at least one on the substrate (40) groove (41);The alignment film (50) covers the electrode layer (40) and groove (41).
9. substrate as claimed in claim 8, which is characterized in that be located at the area where the electrode layer (40) in viewing area (11) Domain, and the part institute being connect in the electrode layer (40) in virtual area (12) with the electrode layer (40) being located in viewing area (11) Region be high-voltage region;
The part not connect with the electrode layer (40) being located in viewing area (11) in the electrode layer (40) in virtual area (12) The region at place is low-voltage region.
10. substrate as claimed in claim 8, which is characterized in that the width of the groove (41) is 50-70um.
CN201910219080.2A 2019-03-21 2019-03-21 The production method and substrate of substrate Pending CN109765719A (en)

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PCT/CN2019/081574 WO2020186565A1 (en) 2019-03-21 2019-04-04 Substrate manufacturing method and substrate

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