CN109755288A - A kind of SOI substrate OLED micro-display device with reflecting barrier layer - Google Patents
A kind of SOI substrate OLED micro-display device with reflecting barrier layer Download PDFInfo
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- CN109755288A CN109755288A CN201910178410.8A CN201910178410A CN109755288A CN 109755288 A CN109755288 A CN 109755288A CN 201910178410 A CN201910178410 A CN 201910178410A CN 109755288 A CN109755288 A CN 109755288A
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- Prior art keywords
- barrier layer
- layer
- reflecting barrier
- soi substrate
- display device
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- 230000004888 barrier function Effects 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000007747 plating Methods 0.000 claims abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 7
- 239000006059 cover glass Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Abstract
The invention proposes a kind of display quality is higher, small product size is small and application scenarios widely have the SOI substrate OLED micro-display device of reflecting barrier layer, including cover glass, chromatic photoresist, thinner package film layer, transparent cathode, OLED luminescent layer, pixel anode, reflecting barrier layer, SOI substrate, silica oxide layer.Reflecting barrier layer is grown in the gap location of pixel anode using Cu metal using electric plating method, and reflecting barrier layer is wrapped up by layer of silicon dioxide oxide layer.
Description
Technical field
The present invention relates to OLED micro-display device field more particularly to a kind of SOI substrates with reflecting barrier layer
OLED micro-display device.
Background technique
Current almost all of OLED micro-display device substrate all uses body silicon materials, and compared to body silicon, SOI substrate has
More preferably isolation, so SOI technology is applied in OLED micro display, while can improve isolation, moreover it is possible to reduce function
Consumption reduces process.Meanwhile the colorization of the OLED micro-display device on market today is substantially and variegates photoresist by white light
It realizes, the white light that pixel anode issues will issue the light of three kinds of colors of RGB by the chromatic photoresist of tri- kinds of colors of RGB.
But the device size of micro-display device is all especially small, it requires high pixel resolution, between pixel and pixel between
Every being limited in one micron hereinafter, we will usually add instead between the pixels so easilying lead to the colour contamination between pixel
Separation layer is penetrated to improve the real quality of micro-display device.The metal for being elected to be reflecting barrier layer needs higher work function and good
Good isolation, the work function of common reflecting barrier layer metal Al are 4.28eV, and the work function of Cu is that 4.65eV is higher than Al, institute
To reduce the influence of colour contamination between pixel also at our problems to be solved to improve display quality.
Summary of the invention
In order to overcome the above-mentioned deficiencies of the prior art, the purpose of the present invention is to provide a kind of with reflecting barrier layer
The device architecture of SOI substrate OLED micro-display device, the device have the characteristics that structure is simple, at low cost, display quality is higher.
A kind of technical solution that the present invention is taken in order to solve the technical problem are as follows: SOI substrate with reflecting barrier layer
OLED micro-display device, comprising: cover glass (1), chromatic photoresist (2), thinner package film layer (3), transparent cathode (6), OLED hair
Photosphere (5), pixel anode (7), reflecting barrier layer (4), SOI substrate (8), silica oxide layer (9).It is characterized in that reflection
Separation layer (4) is grown in the gap location of pixel anode (7) using Cu metal using electric plating method, and reflecting barrier layer (4) is by one
Layer silica oxide layer (9) is wrapped up.
Beneficial effects of the present invention:
By using the Ni metal with high work function and excellent isolation as the reflecting barrier layer of OLED micro-display device, simultaneously
Using the higher SOI substrate of isolation, reduction production while mentioning high display quality there is a phenomenon where colour contamination between pixel is reduced
Product cost.
Detailed description of the invention
The present invention will be further explained below with reference to the attached drawings.
Fig. 1 is the structural diagram of the present invention.
In figure: 1 is cover glass, and 2 be chromatic photoresist, and 3 be thinner package film layer, and 4 be reflecting barrier layer, and 5 shine for OLED
Layer, 6 be transparent cathode, and 7 be pixel anode, and 8 be SOI substrate, and 9 be silica oxide layer.
Specific embodiment
It elaborates below in conjunction with structure of the invention: in Fig. 1, a kind of SOI substrate OLED with reflecting barrier layer
Micro-display device, including cover glass (1), chromatic photoresist (2), thinner package film layer (3), transparent cathode (6), OLED luminescent layer
(5), pixel anode (7), reflecting barrier layer (4), SOI substrate (8), silica oxide layer (9).It is characterized in that reflection isolation
Layer (4) is grown in the gap location of pixel anode (7) using Cu metal using electric plating method, and reflecting barrier layer (4) is by one layer two
Aoxidize silicon oxide layer (9) package, its production method the following steps are included:
1, pixel anode (7) are made on SOI substrate；
2, the Cu reflecting barrier layer of Damascus technics galavanic growth 200nm thickness is used in the interval of pixel anode (7)
(4)；
3, by sedimentation, the silica oxide layer (9) of growth 10nm thickness is used as isolation outside reflecting barrier layer (4)；
4, pass through vapor deposition production OLED luminescent layer (5) in pixel anode；
5, thin-film package (3) are carried out on the transparent cathode (6) of OLED luminescent layer (5)；
6, chromatic photoresist (2) are made on thin-film package (3) and cover cover glass (1)；
7, it cuts, completes the production.
Claims (1)
1. a kind of SOI substrate OLED micro-display device with reflecting barrier layer, it is characterised in that have SOI substrate and reflection every
Absciss layer, reflecting barrier layer are grown in the gap location of pixel anode using Cu metal using electric plating method, and reflecting barrier layer is by one
Layer silica oxide layer package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910178410.8A CN109755288A (en) | 2019-03-11 | 2019-03-11 | A kind of SOI substrate OLED micro-display device with reflecting barrier layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910178410.8A CN109755288A (en) | 2019-03-11 | 2019-03-11 | A kind of SOI substrate OLED micro-display device with reflecting barrier layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109755288A true CN109755288A (en) | 2019-05-14 |
Family
ID=66408334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910178410.8A Pending CN109755288A (en) | 2019-03-11 | 2019-03-11 | A kind of SOI substrate OLED micro-display device with reflecting barrier layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109755288A (en) |
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| US20070002084A1 (en) * | 2005-07-04 | 2007-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic device and method of driving display device |
| US20090284818A1 (en) * | 2007-06-08 | 2009-11-19 | Dai Nippon Printing Co., Ltd. | Piezoelectric mirror device, optical device using the piezoelectric mirror device and method for manufacturing piezoelectric mirror device |
| US20140183460A1 (en) * | 2012-12-31 | 2014-07-03 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| US8906755B1 (en) * | 2013-07-24 | 2014-12-09 | International Business Machines Corporation | Active matrix using hybrid integrated circuit and bipolar transistor |
| CN106601773A (en) * | 2016-12-15 | 2017-04-26 | 武汉华星光电技术有限公司 | Double-sided OLED display device and the manufacturing method for the same |
| CN107331682A (en) * | 2017-06-23 | 2017-11-07 | 安徽熙泰智能科技有限公司 | A kind of silicon substrate OLED micro display chips and its colorization implementation method |
| CN108198955A (en) * | 2017-12-14 | 2018-06-22 | 安徽熙泰智能科技有限公司 | The vacuum abutted method of full-color silicon substrate OLED micro-display devices |
| CN109166901A (en) * | 2018-09-04 | 2019-01-08 | 京东方科技集团股份有限公司 | Oled display substrate, display device and preparation method thereof |
-
2019
- 2019-03-11 CN CN201910178410.8A patent/CN109755288A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070002084A1 (en) * | 2005-07-04 | 2007-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device, electronic device and method of driving display device |
| US20090284818A1 (en) * | 2007-06-08 | 2009-11-19 | Dai Nippon Printing Co., Ltd. | Piezoelectric mirror device, optical device using the piezoelectric mirror device and method for manufacturing piezoelectric mirror device |
| US20140183460A1 (en) * | 2012-12-31 | 2014-07-03 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of manufacturing the same |
| US8906755B1 (en) * | 2013-07-24 | 2014-12-09 | International Business Machines Corporation | Active matrix using hybrid integrated circuit and bipolar transistor |
| CN106601773A (en) * | 2016-12-15 | 2017-04-26 | 武汉华星光电技术有限公司 | Double-sided OLED display device and the manufacturing method for the same |
| CN107331682A (en) * | 2017-06-23 | 2017-11-07 | 安徽熙泰智能科技有限公司 | A kind of silicon substrate OLED micro display chips and its colorization implementation method |
| CN108198955A (en) * | 2017-12-14 | 2018-06-22 | 安徽熙泰智能科技有限公司 | The vacuum abutted method of full-color silicon substrate OLED micro-display devices |
| CN109166901A (en) * | 2018-09-04 | 2019-01-08 | 京东方科技集团股份有限公司 | Oled display substrate, display device and preparation method thereof |
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