CN109755114A - Two-way TVS chip glass blunt front double-sided diffusion process - Google Patents
Two-way TVS chip glass blunt front double-sided diffusion process Download PDFInfo
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- CN109755114A CN109755114A CN201711059126.6A CN201711059126A CN109755114A CN 109755114 A CN109755114 A CN 109755114A CN 201711059126 A CN201711059126 A CN 201711059126A CN 109755114 A CN109755114 A CN 109755114A
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- 238000009792 diffusion process Methods 0.000 title claims abstract description 118
- 239000011521 glass Substances 0.000 title claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 226
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 223
- 239000010703 silicon Substances 0.000 claims abstract description 223
- 238000000034 method Methods 0.000 claims abstract description 70
- 239000007788 liquid Substances 0.000 claims abstract description 40
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- 238000012545 processing Methods 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000007650 screen-printing Methods 0.000 claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims description 85
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 81
- 210000002268 wool Anatomy 0.000 claims description 52
- 235000008216 herbs Nutrition 0.000 claims description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 229910052698 phosphorus Inorganic materials 0.000 claims description 26
- 239000011574 phosphorus Substances 0.000 claims description 26
- 239000002253 acid Substances 0.000 claims description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 238000007639 printing Methods 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 13
- 230000003628 erosive effect Effects 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims description 13
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 12
- 238000012805 post-processing Methods 0.000 claims description 12
- 239000005297 pyrex Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000002000 scavenging effect Effects 0.000 claims description 5
- 238000002791 soaking Methods 0.000 claims description 5
- 238000012360 testing method Methods 0.000 claims description 5
- 229960000583 acetic acid Drugs 0.000 claims description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 4
- 239000012362 glacial acetic acid Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 238000002203 pretreatment Methods 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 3
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 3
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000011863 silicon-based powder Substances 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 238000000576 coating method Methods 0.000 abstract description 12
- 239000011248 coating agent Substances 0.000 abstract description 10
- 239000003292 glue Substances 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 abstract 2
- 239000002002 slurry Substances 0.000 description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
- 229910010271 silicon carbide Inorganic materials 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000003513 alkali Substances 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000011010 flushing procedure Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000003763 carbonization Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000001052 transient effect Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000006396 nitration reaction Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 206010003497 Asphyxia Diseases 0.000 description 1
- 229920002449 FKM Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000006004 Quartz sand Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229920003225 polyurethane elastomer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
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- Weting (AREA)
Abstract
The invention discloses a two-way TVS chip double-sided diffusion process before glass passivation, which comprises the following steps: s1, double-sided diffusion, wherein the surface of the silicon wafer is covered with a diffusion source and diffused; s2 texturing is carried out, so that the roughness of the surface of the silicon wafer is increased, and a coating foundation is provided for coating of protective glue in the subsequent glass passivation process of the silicon wafer. The invention has the advantages that the boron diffusion sources are printed on the two sides of the silicon wafer by adopting the screen printing process, so that the coating flow of the liquid source of the silicon wafer is simplified, and the processing period is shortened; the negative pressure diffusion process is adopted after the liquid source is coated, the source return situation of the edge of the silicon wafer is reduced, the diffusion process steps are simplified, and the diffusion efficiency is improved; the manufactured PN junction is uniform, so that the processing cost of the silicon wafer is reduced.
Description
Technical field
The invention belongs to the manufacturing process area of silicon wafer more particularly to a kind of blunt preceding Double side diffusion works of two-way TVS chip glass
Skill.
Background technique
TVS (Transient Voltage Suppressor) diode, also known as Transient Suppression Diode, is generally to make
A kind of new and effective circuit brake, it has the response time (subnanosecond grade) being exceedingly fast and quite high surge absoption
Ability, cooperates with components such as resistance, capacitors, the purposes to inhibit protection as high voltage transient.When its both ends are subjected to wink
Between high energy impact events when, the impedance value between both ends can be become Low ESR from high impedance with high speed by TVS, to absorb one
A instantaneous large-current, its both end voltage strangulation one it is scheduled numerically, thus protect subsequent circuit element not by
The impact of high voltage transient spike.TVS is widely used in all kinds of protection electronic circuits, wide market, development space compared with
Greatly.
Currently, the production of silicon wafer can use diffusion technique formation PN junction, diffusion work commonly used in the trade at present mostly in industry
Skill generally uses the perfect diffusion in paper source, since gap increases between paper source after sintering silicon wafer, volatilization phosphorus source is caused to diffuse to boron
It causes to return source in face；The method that silicon wafer wool making uses passes through high speed ejection for dry method sanding making herbs into wool, using quartz sand, to silicon chip surface
It polishes, so that silicon chip surface roughness increases.But using dry method sanding technique making herbs into wool have it is apparent the disadvantage is that, adopt
With the silicon wafer of dry method sanding making herbs into wool, silicon wafer stress is larger, so that silicon wafer is easily broken, and making herbs into wool effect is unobvious, roughness compared with
It is small, and process flow is complicated, input cost is larger.
Summary of the invention
In order to solve the above technical problems, the present invention provides a kind of blunt preceding Double side diffusion technique of two-way TVS chip glass.
The present invention provides a kind of two-way blunt preceding Double side diffusion techniques of TVS chip glass, include the following steps:
S1 Double side diffusion, silicon chip surface cover diffusion source and spread.
Wherein, the S1 step Double side diffusion, comprising steps of
S1-1 prints boron diffusion source and prints institute using screen printing technique in the silicon wafer two-face printing boron diffusion source
Stating silicon wafer need to be dried；
Upper Al2O3 powder or silicon powder are sprayed in the silicon wafer two sides by S1-2；
The diffusion of S1-3 negative pressure, the silicon wafer are placed in diffusion furnace, and air pressure in the diffusion furnace is evacuated to negative pressure；
Preferably, the negative pressure be diffused as constant temperature diffusion, 1250 DEG C -1300 DEG C of diffusion temperature.
Wherein, the S1 step Double side diffusion specifically: carry phosphorus oxychloride mode with nitrogen and phosphorus source is deposited on silicon wafer
Surface carries out phosphorus diffusion.
It wherein, further include step making herbs into wool after the S1 step Double side diffusion, the making herbs into wool is wet-method etching or laser making herbs into wool.
Preferably, the wet-method etching specifically includes step:
A1. silicon chip surface phosphorus Pyrex after diffusion are removed in diffusion post-processing；
A2. by treated, silicon wafer is placed in 50~70 DEG C of first order cleaning solution places 3-10min, pure water cleaning 10
~20min；
A3. silicon wafer is placed in 70~90 DEG C of second level cleaning solution and places 20-30min, pure water cleans 10~20 min；
A4. silicon wafer is placed in 70~90 DEG C of second level cleaning solution and places 3-10min, pure water cleans 10~20 min；
A5. the silicon wafer after cleaning is dried, and carries out surface roughness test.
Preferably, the first order cleaning solution be hydrogen peroxide, pure water and mass fraction be 30% potassium hydroxide solution by
It is the solution that 6~10:110~120:1~8 ratio is mixed to form according to volume ratio；
Preferably, the second level cleaning solution be mass fraction be 10~30% potassium hydroxide solution, flocking additive
The solution being mixed to form with pure water according to volume ratio for 0.35~0.42:0.04~0.09:5~10 ratio；
Preferably, the third level cleaning solution be by hydrofluoric acid, hydrochloric acid and pure water according to volume ratio be 10~15:30~
The solution that the ratio of 40:60~80 is mixed to form.
Preferably, the laser making herbs into wool, specifically includes the following steps:
B1. silicon chip surface forming layer after removal is spread: the silicon wafer after diffusion is placed in glass erosion liquid and places 3-
The silicon wafer is cleaned and is dried by 10min；
B2. laser making herbs into wool: the silicon wafer after cleaning is scanned using laser in the silicon chip surface, and the silicon wafer is smooth
Rough surface is made in surface；
B3. it is cleaned after making herbs into wool: after the silicon wafer wool making, being set to HF solution soaking and washing, carry out spilling water after the cleaning of HF solution
It cleans and dries.
Preferably, the glass erosion liquid is that hydrofluoric acid ammonium, oxalic acid, ammonium sulfate, glycerol, barium sulfate and hot pure water press volume
Ratio is the solution that the ratio of 6-10:8-15:20-30:4-15:10-22:110-120 is mixed to form.
It preferably, include that step spreads pre-treatment before the S1 step Double side diffusion, specifically:
C1. silicon wafer is placed in 0~15 DEG C of corrosive liquid and corrodes 9-50s, silicon wafer is made to carry out two-sided be thinned；Pure water cleaning,
Time is 10-20min, cleans corrosive liquid；
C2., silicon wafer is placed in 40-80 DEG C of base extraction 5-20min；
C3. two-stage spilling water cleans；The cleaning of level-one ultrasound spilling water；The cleaning of two-stage spilling water；Every grade of scavenging period is 5-20min；
C4. the acid solution three-level acid that silicon wafer is placed in 60-100 DEG C is handled, every grade of processing time is 5-20min；C5. level Four
Spilling water cleaning, every grade of scavenging period 5-20min；
Preferably, the corrosive liquid is that example is 10-20:5-10:1- by volume for nitric acid, hydrofluoric acid, glacial acetic acid and pure water
The solution that the ratio of 10:1-10 is mixed to form；
Preferably, the lye is potassium hydroxide solution；The acid solution is nitric acid solution.
The advantages and positive effects of the present invention are: since two-way TVS chip requires concentration high phosphorous diffusion source, printing
The concentration that technique does not reach requirement, so silk-screen printing technique is not used to apply phosphorus source；Using silk-screen printing technique on silicon wafer two sides
Boron diffusion source is printed, so that the coating process of silicon wafer liquid source is simplified, and the process-cycle is reduced；After liquid source coating
Using negative pressure diffusion technique, mitigate silicon chip edge and return source situation, and the diffusion process steps simplify, and improve diffuser efficiency, make
The PN junction that must be made is uniform, so that the processing cost of silicon wafer reduces, substitutes traditional dry method using wet-method etching or laser making herbs into wool
Sanding increases the roughness of silicon chip surface so that worm channel shape flannelette is made in silicon chip surface, is conducive to the blunt technique of the subsequent glass of silicon wafer and protects
The coating of sheath, so that adhesive force increases when protective layer coats in the blunt technique of glass.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, below it is right
Embodiments of the present invention, which are made, to be illustrated.
This programme is related to a kind of blunt preceding Double side diffusion process of two-way TVS chip glass, including Double side diffusion, making herbs into wool, tool
Body is diffusion pre-treatment, phosphorus diffusion (boron diffusion), diffusion post-processing, making herbs into wool.
Specifically comprise the following steps:
One, pre-treatment is spread
1) wafer anneal cleans: the silicon wafer of well cutting being carried out annealing cleaning, gets rid of surface contaminants, while reducing silicon wafer
The mechanical damage being subject in cutting；
2) silicon wafer is two-sided is thinned: two-sided corrosion is carried out to silicon wafer using corrosive liquid, removes surface damage layer, specifically include as
Lower step:
A. thermometer measure corrosive liquid temperature is used, which is generally 0-15 DEG C, and sets silicon wafer according to corrosive liquid temperature
Etching time, the etching time are generally 9-50s, determine etching time according to corrosive liquid temperature, silicon wafer is placed in corrosive liquid
Middle carry out corrosion thinning determines that the two-sided thinned thickness of silicon wafer, the thickness are generally 10-20 μm according to corrosive liquid temperature；
B. after corroding, silicon wafer is put into pure water rinse bath and is cleaned, the corruption during corrosion thinning is washed
Liquid is lost, the time of cleaning is 10-20min；
C. measure silicon wafer subduction amount: whether Wafer Cleaning is completely complied with standard using the subduction amount of apparatus measures silicon wafer afterwards,
Measuring instrument used herein is spiral micrometer, can also be the instrument of other measurement thickness, that is, measurement silicon wafer is two-sided to be thinned
Thickness, which is generally 10-20 μm；
D. spilling water cleaning is carried out to silicon wafer after measuring, the purpose of spilling water cleaning is the impurity of silicon chip surface after removal is thinned.
Wherein, above-mentioned corrosive liquid is the nitric acid being mixed in a certain ratio, hydrofluoric acid, glacial acetic acid and pure water, the corrosive liquid
It can be good at carrying out corrosion thinning to silicon wafer, mixed proportion here is that example is mixed by volume, according to volume ratio
It is mixed for the ratio of 10-20:5-10:1-10:1-10.
3) thinned silicon wafer is successively handled: alkali process, spilling water cleaning, acid is successively carried out clearly to the silicon wafer after being thinned
It washes, spilling water cleaning, drying, it is therefore an objective to which the surface mechanical damage for removing silicon wafer removes the metal ion of silicon chip surface and organic molten
The impurity such as agent, that is,
A. the silicon wafer after being thinned is placed in lye and handles, which is potassium hydroxide solution, and the hydroxide
The temperature of potassium solution is 40-80 DEG C, and the alkali process time is in 5-20min, and alkali process here is level-one alkali process, it is,
Carry out an alkali process；
B. silicon wafer is put into progress spilling water cleaning in pure water after the completion of alkali process, removes the lye of silicon chip surface, here
Cleaning includes three steps, is first cleaned using spilling water, and spilling water cleaning here is cleaned using two-stage spilling water, is used after the cleaning of two-stage spilling water
Ultrasonic spilling water cleaning, ultrasonic spilling water cleaning are cleaned after ultrasonic spilling water cleaning using spilling water, here using primary ultrasonic spilling water cleaning
It is cleaned using two-stage spilling water, the time of every step cleaning is in 5-20min here, and two-stage spilling water cleaning here refers to silicon wafer
It carries out water twice to clean, sufficiently removes other solution impurities of silicon chip surface, the cleaning of level-one ultrasound spilling water refers to carrying out primary
Ultrasonic spilling water cleaning；
C. the silicon wafer cleaned up is placed in acid solution and carries out sour processing, the acid solution used of acid processing here is that nitric acid is molten
Liquid, 60-100 DEG C of the temperature of the nitric acid, acid processing time are in 5-20min, and acid processing here is that three-level acid is handled, also
It is to carry out three hypo acid processing, the time of every hypo acid processing is all identical；
D. after the completion of acid processing, silicon wafer is put into progress spilling water cleaning in pure water, removes the acid solution of silicon chip surface, here
Spilling water scavenging period is in 5-20min, and spilling water cleaning here is the cleaning of level Four spilling water, it is, four spilling water cleanings are carried out,
The time of each spilling water cleaning is identical；
E. the silicon wafer cleaned up is dried, so that there is no the impurity such as water for silicon chip surface.
Two, Double side diffusion
According to different type product, when silicon wafer type is p-type two-way TVS chip, two-sided silicon wafer is phosphorus diffusion making herbs into wool；Silicon wafer
When type is N-type two-way TVS chip, silicon wafer is two-sided to spread making herbs into wool for boron.
Phosphorus diffusion: being directed to the two-way TVS chip of p-type, since the two-way TVS chip of p-type requires concentration high phosphorous diffusion source, printing
The concentration that technique does not reach requirement, so silk-screen printing technique is not used to apply phosphorus source.
41) when diffusion furnace furnace temperature reaches 1000 DEG C, the silicon wafer to phosphorus diffusion is pushed into flat-temperature zone, temperature rises to 1200
DEG C when with nitrogen carry phosphorus oxychloride mode phosphorus source is deposited on carry out phosphorus diffusion 2 hours after silicon chip surface after come out of the stove.
Boron diffusion: it is directed to the two-way TVS chip of N-type；
42) printed on both sides boron diffusion source: boderizing boron source is diffused to silicon wafer using screen printing technique, in silicon chip surface
It coats diffusion source and uses silk-screen printing technique, which realized using halftone tension continuously from the principle of version, printing packet
Include three elements: ink (slurry), scraper, silk screen；Wherein, which is by function component, bonds component and have airborne
Body composition, has characteristics that viscosity, is a kind of property for preventing flowing material from flowing, be interact between fluid molecule and
Generate the measurement for hindering its intermolecular relative motion ability；Yield value, power suffered by ink, which has to be larger than certain value, to flow
It is dynamic；Thixotropy, ink by external force stirring when with stirring action by thick thinning, when stirring action stops, it is multiple be restored to again it is original
When consistency；Mobility, ink under the gravity of itself, can be flowed as liquid, by the viscosity of ink, yield value and
Thixotropy determines.
In addition, the effect of scraper is that slurry is pressed into slurry in the leak hole of silk screen to certain speed and angle, scraper
Certain pressure is kept to silk screen in printing, guarantees that the scraper is generally polyurethane rubber by the leak hole of slurry indentation silk screen
Glue or Viton.
It is as follows that scraper influences printing effect factor: scraper hardness, scraper blade strip hardness is lower, and the thickness of printed pattern is bigger,
Scraper material must assure that cutting edge has good linearity；Blade pressure, blade pressure is excessive to be easy that silk screen is made to deform, print
Figure after brush is inconsistent, also aggravates the abrasion of scraper and silk screen, and blade pressure is too small can there are residual on silk screen after printing
Stay slurry；The setting of scraper speed, print speed printing speed is determined that the higher slurry of speed enters by the viscosity of printed pattern and printing slurry
The mesh time is shorter, and fillibility is poorer；The setting of scraper angle, scraper angle is related with slurry, and slurry viscosity value is higher, flowing
Property is poorer, needs scraper bigger to the downward pressure of slurry, scraper angle is small；General scraper angle adjustable range is 45 °~
75°。
Silk screen plays a significant role in silk-screen printing: the supporter of silk screen required emulsion when being pattern formation；It simultaneously can
To penetrate discharge-amount when halftone using silk screen control ink；It is realized using halftone tension preferably from version；Screen thickness determines
Print thickness.This requires silk screen wire rods to have certain intensity: optimal halftone will have high-intensitive on-deformable spy
The halftone type of point, different printing effect demands is different, in the present embodiment, prints diffusion source in silicon chip surface, adopts
With intermediate intensity, in low ductility precision net, the tension stress of this used material of silk screen is higher than standard tension materials by 30~
40%, dimensional accuracy stability and printing resistance with height.
Using silk-screen printing technique to silicon wafer two-face printing boron diffusion source, specifically includes the following steps:
A. in silicon wafer one side printing boron diffusion source: boron diffusion source being sprayed on halftone, which is woven by engineering plastics
It forms, silicon wafer is placed in below halftone, applies pressure at a certain angle above halftone with scraper, boron diffusion source is printed to silicon
Piece surface, the angle of scraper is 40 °~90 °, printing pressure 30N-120N here, and version spacing is 1-3mm, and print speed printing speed is
50-300mm/S, scraper height are 1-3mm, and scraper hardness is 40-80HRC；
B. the silicon wafer for printing boron diffusion source is placed in baking oven, boron diffusion source is dried, the drying time according to
The number to be printed of boron diffusion source determines that time for generally toasting is 1-30min, and temperature is 90-180 DEG C；
C. boron diffusion source is printed to silicon wafer another side by the processing step of step a, step b, and is toasted, the drying
Time determines that the time generally toasted is 1-30min according to the number to be printed of boron diffusion source, and temperature is 90-180 DEG C；
D. after the completion of toasting, upper Al2O3 powder or silicon powder are sprayed into silicon wafer two sides.
52) lamination fills boat: by silicon wafer, opposite lamination fills boat two-by-two, i.e., folds silicon wafer boron source face is opposite with boron source face
Piece is put into silicon carbide boat after lamination, and places baffle in carbonization boat front-rear position, and silicon wafer is compressed, can carried out in this way
The space in diffusion furnace is made full use of after negative pressure diffusion, and work efficiency is high, can once be diffused multiple batches of silicon wafer；
62) negative pressure is spread: will be carried out negative pressure diffusion in diffusion furnace mounted in the silicon wafer of carbonization boat, is made uniform PN junction；
Wherein, the specific steps that negative pressure is spread in the step are as follows:
A. the carbonization boat equipped with silicon wafer is placed in diffusion furnace, is placed in the flat-temperature zone of the diffusion furnace, used after closing fire door
Air pressure in diffusion furnace is evacuated to negative pressure, generally 10-101Kpa by vacuum pump；
B. diffusion furnace temperature is risen into 1250 DEG C of -1300 DEG C of progress constant temperature diffusions by 550 DEG C -650 DEG C, constant temperature time is
10-20h；
C. after spreading, diffusion furnace temperature is down to 550 DEG C -650 DEG C, and the carbonization boat of containing silicon slice is pulled out diffusion furnace.
Three, making herbs into wool
Making herbs into wool step includes
7) diffusion post-processing
8) silicon chip surface making herbs into wool:
According to wet-method etching, then specific steps include the following steps:
71) diffusion post-processing: the silicon wafer after diffusion being placed in acid and is diffused post-processing, and silicon wafer is washed by water and made after separating
With nitration mixture clean the surface, silicon chip surface phosphorus, Pyrex after diffusion are removed.The acid for being used as diffusion post-processing in the step is hydrogen
Fluorspar acid solution is the nitric acid being mixed in a certain ratio, hydrofluoric acid, glacial acetic acid and pure to the nitration mixture that silicon chip surface carries out cleaning
Water, it is that 1000-3000:300-800:100-400:1000-3000 carries out ratio that certain proportion here, which is according to volume ratio,
Mixing.
81) silicon chip surface making herbs into wool: silicon chip surface making herbs into wool can use wet-method etching, can also use laser making herbs into wool.
When using wet-method texturing manufacturing process, before making herbs into wool, first using high-temperature vapor and hydrofluoric acid removal diffusion post-processing
Silicon chip surface phosphorus, Pyrex, then use wet-method etching, specifically includes the following steps:
A. the silicon wafer monolithic after diffusion post-processing is laminated on silicon carbide boat, silicon carbide boat here is by oxidation processes
Afterwards have card slot, the silicon carbide boat for loading silicon wafer is put into quartzy nozzle；
B. silicon carbide boat is slowly pushed into flat-temperature zone with furnace hook, covers quartzy furnace crown；
C. the startup program for opening oxidation furnace, starts timer；
D. buzzer sounds, and closes timer, starts steam generator, begins to warm up and press again timer switch,
Subsequent buzzer sounds, and closes timer, closes nitrogen switch, aoxidizes furnace temperature at this time and rises to 1080-1120 DEG C, keeps permanent
After 10-30 minutes warm, steam generator is closed, opens nitrogen switch, oxidation procedure terminates, then wears gloves and remove quartz
Silicon carbide boat is slowly pulled to quartzy nozzle with furnace hook by cap, and cooling in quartzy nozzle；
E. it after silicon carbide boat being taken out, places it on stainless steel platform and is sufficiently cooled to room temperature, this process opens purification work
Make platform, using efficient function, so that the air in clean work station passes through filtration, purification, avoids being mixed into other when silicon wafer is cooling
Impurity；
F. silicon wafer after cooling is taken out from silicon carbide boat, and put in a reservoir, container herein is the gaily decorated basket, is used for
Silicon wafer use is held, the gaily decorated basket is immersed in molten equipped with 49% hydrofluoric acid by the mark face of silicon wafer equally towards the U-shaped face of the gaily decorated basket at this time
In the trough of liquid, soaking time is 5-15 minutes, and gaily decorated basket taking-up is put into sink and washes by water and dries, removes table after silicon chip
The damaging layer in face；
G. cleaning solution is corroded in configuration: first order cleaning solution, second level cleaning solution and third level cleaning solution is respectively configured, for system
Suede is prepared, specifically includes the following steps:
G1. appropriate potassium hydroxide is weighed, configuration quality score is the potassium hydroxide solution of 10-30%；
G2. first order cleaning solution is configured: the potassium hydroxide for being 10-30% by hydrogen peroxide, pure water and the mass fraction of configuration
Solution carries out configuration first order cleaning solution according to the ratio mixing that volume ratio is 6-10:110-120:1-8；
G3. it configures second level cleaning solution: the mass fraction of configuration is added for the potassium hydroxide solution of 10-30%, making herbs into wool
Agent and pure water carry out configuring second level cleaning solution according to the ratio mixing that volume ratio is 0.35-0.42:0.04-0.09:5-10；
G4. configure third level cleaning solution: by hydrofluoric acid, hydrochloric acid and pure water according to volume ratio be 10-15:30-40:60-80
Ratio mixing carry out configuration third level cleaning solution.
H. configured corrosion cleaning solution is poured into corresponding rinse bath, and sets the temperature of rinse bath, it is,
H1. configured first order cleaning solution is poured into first order rinse bath and is opened heating device, and temperature is set
It is set to 50-70 DEG C；
H2. configured second level cleaning solution is poured into the rinse bath of the second level and is opened heating device, temperature is set
It is 70-90 DEG C；
H3. configured third level cleaning solution is poured into third level rinse bath.
I. the silicon wafer after removal glass is placed in the gaily decorated basket, the mark face of silicon wafer is equally towards the U shape of the gaily decorated basket at this time
Face；
J. when the temperature of rinse baths at different levels reaches setting value, the gaily decorated basket equipped with silicon wafer is put into first order rinse bath,
The gaily decorated basket equipped with silicon wafer is taken out to be put into sink after 3-10min and is washed by water, the purpose of flushing period 10-20min, flushing are
Except the first order cleaning solution of silicon chip surface；
K. the gaily decorated basket that silicon wafer is housed after bath is put into the rinse bath of the second level, the gaily decorated basket is taken out after 20-30min and is put into water
It washes by water in slot, flushing period 10-20min, the purpose of flushing is the second level cleaning solution for removing silicon chip surface；
L. the gaily decorated basket after bath is put into third level rinse bath, the gaily decorated basket equipped with silicon wafer is taken out after 3-10min and is put into
It washes by water in sink, flushing period 10-20min, the purpose of flushing is the third level cleaning solution for removing silicon chip surface；
M. the silicon wafer after cleaning is dried, and carries out surface roughness test.
By test data it is recognised that wet-method etching effect is obvious, silicon chip surface roughness is 0.596 before making herbs into wool, making herbs into wool
Silicon chip surface roughness is 0.832 afterwards.
According to laser making herbs into wool, then specific steps include the following steps:
72) diffusion post-processing: silicon chip surface forms one layer of forming layer after diffusion, which is phosphorus, Pyrex, uses
Phosphorus, the Pyrex of the silicon chip surface of glass erosion liquid removal diffusion post-processing, using glass erosion liquid by silicon wafer liquid state diffusion
Phosphorus, the Pyrex formed after the diffusion of source erode, and prepare for the making herbs into wool of next step laser, specifically includes the following steps:
A. the silicon wafer after diffusion is immersed in glass erosion liquid, soaking time 0.5-4h, the silicon wafer after removal diffusion
Phosphorus, the Pyrex on surface, the glass erosion liquid are hydrofluoric acid ammonium, oxalic acid, ammonium sulfate, glycerol, the sulphur being mixed in a certain ratio
Sour barium and hot pure water, the mixed proportion are that ratio by weight is 20-30%:10-20%:10-20%:0-10%:20-30%:
The ratio of 10-20% is mixed.
B. the silicon wafer after impregnating glass erosion liquid is cleaned by ultrasonic, and the glass erosion liquid of silicon chip surface is removed, meanwhile, make
Phosphorus, the Pyrex for obtaining silicon chip surface react incomplete phosphorus, Pyrex with glass erosion liquid and are got rid of by ultrasonic wave, this
In ultrasonic cleaning be the silicon wafer after immersion corrosion liquid is once cleaned by ultrasonic, the time of ultrasonic cleaning is generally 5-
30min；
C. the silicon wafer after being cleaned by ultrasonic carries out water cleaning, further may remaining glass erosion liquid cleaning by silicon chip surface
Fall, only carries out a spilling water cleaning here, that is, the silicon wafer after ultrasonic cleaning is put and is once washed by water in the sink, is washed by water
It afterwards and takes out, the time of spilling water cleaning is generally 5-30min；
D. the silicon wafer after the spilling water cleaning in previous step is subjected to nitric acid cleaning, further gets rid of the residual of silicon chip surface
The impurity stayed, that is, silicon wafer is put into nitric acid and is cleaned, the time of nitric acid cleaning is generally 5-30min；
E. the silicon wafer after nitric acid being cleaned carries out water cleaning, and the nitric acid of the silicon chip surface in previous step is diluted clearly
It washes away and removes, the silicon wafer after pernitric acid cleans is subjected to four spilling water cleanings here, that is, successively by the silicon wafer cleaned through pernitric acid
It is put into four sinks and washes by water, the time of level Four spilling water cleaning is generally 5-30min；
F. the silicon wafer application dryer after spilling water being cleaned dries.
82) silicon chip surface making herbs into wool: laser making herbs into wool here is to carry out laser making herbs into wool respectively on silicon wafer two sides, the silicon after cleaning
Piece carries out full sheet scanning, specific steps are as follows: the silicon wafer after cleaning is placed in the work of laser in silicon chip surface using laser
On platform, silicon chip surface is scanned using laser, when which is scanned, the laser beam of laser from a left side to
Right progress straight linear scanning, and the laser beam is successively to carry out straight linear scanning from top to bottom on the surface of silicon wafer, it will
Entire silicon chip surface all scanning one times, it is, laser device laser light beam is when silicon chip surface is scanned, by laser beam
The spot diameter of formation is controlled at 10-80 μm, and straight linear scanning is first carried out in silicon chip surface transverse direction, and a transverse direction is swept
After the completion of retouching, laser beam is moved down, and then the transverse direction for having scanned completion continues lateral straight linear scanning, also
It is that laser beam successively carries out multiple transversal scanning in a longitudinal direction, forms scanning track together in silicon chip surface；
After the completion of silicon chip surface one side scanning therein, silicon wafer is subjected to turn-over, making herbs into wool is scanned to the another side of silicon wafer, also
It is that silicon wafer two sides all carries out laser scanning, two-sided making herbs into wool is carried out to silicon wafer.
The principle of laser making herbs into wool is: laser beam is radiated on silicon wafer, due to the high temperature action of the hot spot of laser beam, silicon
Piece surface due to laser beam high temperature action so that silicon chip surface generate melting state, wait it is scanned after, through being subcooled
But, the polysilicon crystal of melting is formed in silicon chip surface.
For silicon wafer when by laser scanning, the laser beam of laser converges in laser surface, since the high temperature of laser is made
With so that silicon chip surface, there is a phenomenon where melting, after the light beam of laser is scanned, silicon chip surface molten condition is through supercooling shape
At melting polysilicon, so that rough melting polysilicon is made in silicon chip surface, so that silicon wafer table after silicon wafer is scanned
The roughness in face increases, and coating basis is provided for the coating of protective glue in the blunt technique of the subsequent glass of silicon wafer, so that protective glue is applying
Adhesive force increases when covering, not easily to fall off.
Silicon wafer passes through laser scanning, and silicon chip surface forms the state of melting due to high temperature action, so that the removal amount of silicon wafer
Reach 4-5 μm, the monocrystalline silicon of entire silicon chip surface is all passed through into laser, rough melting polysilicon is made.Meanwhile laser
Scanning can also remove the phosphorus not removed by glass erosion liquid, the Pyrex of silicon chip surface.
When laser scanning, laser used is infrared laser, is also possible to other lasers, can be according to production need
It asks and is selected, and the laser frequency of the laser is 0.1MHz-1MHz, power 10-50W, the scanning speed of laser is 3-
Rough surface is made in smooth silicon chip surface by 40m/s, so that silicon chip surface roughness is improved by 0.3m to 0.5-1.5 μm；And
Silicon wafer is placed on the workbench of laser by silicon wafer when carrying out laser scanning, silicon wafer fixation is put well, and silicon wafer is placed
At normal temperatures and pressures, it places in air, silicon chip surface is scanned using laser, it is, silicon wafer application laser is swept
It retouches not by environmental restrictions, so that silicon wafer wool making technique is simplified, reduces equipment investment, and make silicon wafer wool making technique simple
Single, easy to operate, making herbs into wool is simple.
It is cleaned after making herbs into wool: using acid solution soaking and washing, the cleaning of two-stage spilling water is carried out after acid solution cleaning and is dried, here
The acid solution of application is hydrofluoric acid solution, and the purpose cleaned here is that the impurity of the generation of the silicon chip surface Jing Guo laser scanning is clear
It washes off.
After laser process for etching, two surfaces of silicon wafer are attached with one layer of rough polysilicon respectively, form one
Kind surface is attached with the monocrystalline silicon piece of polysilicon.
By above-mentioned steps, the phosphorus of the silicon chip surface of diffusion post-processing, Pyrex utilization are configured by a certain percentage
After glass erosion liquid removal, and making herbs into wool is carried out to silicon chip surface with the method for laser making herbs into wool, after making herbs into wool to silicon chip surface into
Row roughness test, result are that silicon chip surface roughness is 0.3m before making herbs into wool, and silicon chip surface roughness is 0.5-1.5 μ after making herbs into wool
M, it is known that making herbs into wool effect is obvious, and silicon chip surface roughness is uniformly that the coating of the protective glue of the subsequent blunt technique of silicon wafer glass is done
It is good to prepare.
The advantages and positive effects of the present invention are: since two-way TVS chip requires concentration high phosphorous diffusion source, printing
The concentration that technique does not reach requirement, so silk-screen printing technique is not used to apply phosphorus source；Using silk-screen printing technique on silicon wafer two sides
Boron diffusion source is printed, so that the coating process of silicon wafer liquid source is simplified, and the process-cycle is reduced；After liquid source coating
Using negative pressure diffusion technique, mitigate silicon chip edge and return source situation, and the diffusion process steps simplify, and improve diffuser efficiency, make
The PN junction that must be made is uniform, so that the processing cost of silicon wafer reduces, substitutes traditional dry method using wet-method etching or laser making herbs into wool
Sanding increases the roughness of silicon chip surface so that worm channel shape flannelette is made in silicon chip surface, is conducive to the blunt technique of the subsequent glass of silicon wafer and protects
The coating of sheath, so that adhesive force increases when protective layer coats in the blunt technique of glass.
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (10)
1. a kind of blunt preceding Double side diffusion technique of two-way TVS chip glass, which comprises the steps of:
S1 Double side diffusion, silicon chip surface cover diffusion source and spread.
2. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 1, it is characterised in that:
The S1 step Double side diffusion, comprising steps of
S1-1 prints boron diffusion source and prints the silicon using screen printing technique in the silicon wafer two-face printing boron diffusion source
Piece need to be dried；
Upper Al2O3 powder or silicon powder are sprayed in the silicon wafer two sides by S1-2；
The diffusion of S1-3 negative pressure, the silicon wafer are placed in diffusion furnace, and air pressure in the diffusion furnace is evacuated to negative pressure.
3. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 2, it is characterised in that:
The negative pressure is diffused as constant temperature and spreads, and 1250 DEG C -1300 DEG C of diffusion temperature.
4. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 1, it is characterised in that: the S1 step
Double side diffusion specifically: phosphorus source is deposited on silicon chip surface with nitrogen carrying phosphorus oxychloride mode and carries out phosphorus diffusion.
5. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 1, it is characterised in that:
It further include step making herbs into wool after the S1 step Double side diffusion, the making herbs into wool is wet-method etching or laser making herbs into wool.
6. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 5, it is characterised in that: the wet process system
Suede specifically includes step:
A1. silicon chip surface phosphorus Pyrex after diffusion are removed in diffusion post-processing；
A2. by treated, silicon wafer is placed in 50~70 DEG C of first order cleaning solution places 3-10min, and pure water cleaning 10~
20min；
A3. silicon wafer is placed in 70~90 DEG C of second level cleaning solution and places 20-30min, pure water cleans 10~20min；
A4. silicon wafer is placed in 70~90 DEG C of second level cleaning solution and places 3-10min, pure water cleans 10~20min；
A5. the silicon wafer after cleaning is dried, and carries out surface roughness test.
7. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 6, it is characterised in that: the first order
Cleaning solution is that the potassium hydroxide solution that hydrogen peroxide, pure water and mass fraction are 30% according to volume ratio is 6~10:110~120:1
The solution that~8 ratio is mixed to form；The second level cleaning solution be mass fraction be 10~30% potassium hydroxide solution, system
Suede additive and pure water are according to the solution that volume ratio is that 0.35~0.42:0.04~0.09:5~10 ratio is mixed to form；Institute
State third level cleaning solution be by hydrofluoric acid, hydrochloric acid and pure water according to volume ratio be 10~15:30~40:60~80 ratio mix
The solution of formation.
8. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 5, it is characterised in that: the laser system
Suede, specifically includes the following steps:
B1. silicon chip surface forming layer after removal is spread: the silicon wafer after diffusion is placed in glass erosion liquid and places 3-
The silicon wafer is cleaned and is dried by 10min；
B2. laser making herbs into wool: the silicon wafer after cleaning is scanned using laser in the silicon chip surface, by the silicon wafer smooth surface
Rough surface is made；
B3. it is cleaned after making herbs into wool: after the silicon wafer wool making, being set to HF solution soaking and washing, carry out spilling water cleaning after the cleaning of HF solution
And it dries.
9. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 8, it is characterised in that: the glass is rotten
Losing liquid is that example is 6-10:8-15:20-30:4- by volume for hydrofluoric acid ammonium, oxalic acid, ammonium sulfate, glycerol, barium sulfate and hot pure water
The solution that the ratio of 15:10-22:110-120 is mixed to form.
10. the blunt preceding Double side diffusion technique of two-way TVS chip glass according to claim 1, it is characterised in that:
It include that step spreads pre-treatment before the S1 step Double side diffusion, specifically:
C1. silicon wafer is placed in 0~15 DEG C of corrosive liquid and corrodes 9-50s, silicon wafer is made to carry out two-sided be thinned；Pure water cleaning, time
For 10-20min, corrosive liquid is cleaned；
C2., silicon wafer is placed in 40-80 DEG C of base extraction 5-20min；
C3. two-stage spilling water cleans；The cleaning of level-one ultrasound spilling water；The cleaning of two-stage spilling water；Every grade of scavenging period is 5-20min；
C4. the acid solution three-level acid that silicon wafer is placed in 60-100 DEG C is handled, every grade of processing time is 5-20min；C5. level Four spilling water is clear
It washes, every grade of scavenging period 5-20min；
Preferably, the corrosive liquid is that example is 10-20:5-10:1-10:1- by volume for nitric acid, hydrofluoric acid, glacial acetic acid and pure water
The solution that 10 ratio is mixed to form；
Preferably, the lye is potassium hydroxide solution；
Preferably, the acid solution is nitric acid solution.
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| CN101916786A (en) * | 2010-06-22 | 2010-12-15 | 南通明芯微电子有限公司 | High-power planar junction bidirectional TVS diode chip and production method thereof |
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