CN109750351A - A kind of efficient Si of polycrystalline silicon ingot casting3N4Powder - Google Patents
A kind of efficient Si of polycrystalline silicon ingot casting3N4Powder Download PDFInfo
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- CN109750351A CN109750351A CN201810548669.2A CN201810548669A CN109750351A CN 109750351 A CN109750351 A CN 109750351A CN 201810548669 A CN201810548669 A CN 201810548669A CN 109750351 A CN109750351 A CN 109750351A
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- powder
- polycrystalline silicon
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- ingot casting
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Abstract
The invention discloses a kind of polycrystalline silicon ingot castings with efficient Si3N4Powder, specially photovoltaic grade Si3N4Powder and a small amount of Si2N2The mixture of O.Preparation method are as follows: a certain amount of purity is taken to be greater than the Si that 99.99%, partial size is 0.01 μm~10 μm2N2O and photovoltaic grade silicon nitride powder are uniformly mixed.Si provided by the invention3N4Powder is used for the release agent of polycrystalline silicon ingot casting, can obtain the polysilicon chip that homogeneous grain size, defect are few, dislocation density is low, battery conversion efficiency is high.
Description
Technical field
The present invention relates to a kind of polycrystalline silicon ingot castings with efficient Si3N4Powder, it is de- on crucible when the product is as polycrystalline silicon ingot casting
Mould agent, belongs to chemical field.
Background technique
Polycrystalline silicon ingot casting is the main production method of current photovoltaic crystalline silicon.This method is by being placed in quartz for polycrystalline silicon material
Reorientation solidifies after fusing in crucible.It can get cells convert effect by the adjustment of the improvement of thermal field structure, crystal growing technology
The higher silicon ingot of rate.When previous great technological break-through is the use of high efficient crucible, which is equipped with enough
The heterogeneous forming core layer of forming core roughness cooperates specific degree of supercooling to be obtained with higher nucleation rate, obtains the smaller crystalline substance of size
Grain is realized and inhibits dislocation multiplication, the effect of dislocation reduced, to improve silicon wafer transformation efficiency.
As release agent essential during ingot casting, the silicon nitride coating of crucible internal walls, which has, prevents impurity in crucible
Two basic roles that silicon ingot smoothly demoulds are spread and ensured into silicon material.There is the correlative study of high-efficiency silicon nitride silicon powder in the recent period, such as
104532344 A of CN, which is mentioned, is uniformly mixed to get high-efficiency silicon nitride silicon powder with silicon powder, carborundum powder and silicon nitride powder, can help
Acquisition homogeneous grain size, silicon ingot defect is few, dislocation density is low, the polycrystal silicon ingot of high yield rate.
Summary of the invention
The present invention provides a kind of polycrystalline silicon ingot casting efficient Si3N4Powder, specially photovoltaic grade Si3N4Powder and a small amount of Si2N2O's
Mixture.Generally acknowledged silicon melt and pure Si3N4It is infiltration, Si3N4The not wellability of coating and silicon melt and wherein have one
Fixed O is related.Therefore the O of proper content is for Si3N4Coating realizes that the function of isolation impurity and demoulding is beneficial.The present invention
It is innovative in Si3N4A small amount of Si is introduced in powder2N2O has found the release agent when mixture is used as polycrystalline silicon ingot casting, not only
It is able to achieve the function of isolation impurity and demoulding, the expansion in high minority carrier lifetime region in ingot casting is additionally aided, to improve
Transfer efficiency.A kind of efficient Si of polycrystalline silicon ingot casting that the present invention mentions3N4Powder is specially that a certain amount of purity is greater than
99.99%, the Si that partial size is 0.01 μm~10 μm2N2O and photovoltaic grade silicon nitride powder homogeneous mixture.
Specific embodiment
Particular content of the invention is further illustrated combined with specific embodiments below:
Embodiment 1:
Purity is not less than 99.99%, the Si that median particle diameter is 2.2 μm3N4Powder and Si2N2O is uniformly mixed, wherein Si2N2O accounts for Si3N4
With Si2N27% in O gross mass.By common photovoltaic grade Si3N4Powder spraying process carries out spraying the efficient Si3N4Powder.
Embodiment 2:
Purity is not less than 99.99%, and median particle diameter is respectively the Si of 2.2 μm, 6 μm3N4Powder and Si2N2O is uniformly mixed, wherein
Si2N2O accounts for Si3N4With Si2N25% in O gross mass.Surface first sprays one layer of common photovoltaic grade Si3N4Powder, then press common photovoltaic grade
Si3N4Powder spraying process sprays one layer of efficient Si3N4Powder.
Embodiment 3:
Purity is not less than 99.99%, and median particle diameter is respectively the Si of 2.2 μm, 1.2 μm3N4Powder and Si2N2O is uniformly mixed, wherein
Si2N2O accounts for Si3N4With Si2N21% in O gross mass.By common photovoltaic grade Si3N4Powder spraying process carries out spraying the efficient Si3N4
Powder.
The embodiments described above only express several embodiments of the present invention, and but it cannot be understood as to this hair
The limitation of bright the scope of the patents, without departing from the inventive concept of the premise, various modifications and improvements can be made, these all belong to
In protection scope of the present invention.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (4)
1. the invention discloses a kind of polycrystalline silicon ingot castings with efficient Si3N4Powder, it is characterised in that the efficient Si3N4Powder is photovoltaic grade
Si3N4Powder and a small amount of Si2N2The mixture of O.
2. a kind of according to claim 1, the efficient Si of polycrystalline silicon ingot casting3N4Powder, it is characterised in that Si therein3N4Powder is photovoltaic
Grade, specially purity are not less than 99.99%, and metal impurities total content is not higher than 25ppm, and B, P individual event are not higher than 3ppm, and partial size is
1.0~2.5μm。
3. a kind of according to claim 1, the efficient Si of polycrystalline silicon ingot casting3N4Powder, it is characterised in that Si2N2O is in Si3N4With Si2N2O
Accounting in mixture gross mass is 1% ~ 8%, and partial size is 0.01 μm~10 μm.
4. a kind of according to claim 1, the efficient Si of polycrystalline silicon ingot casting3N4Powder, it is characterised in that the powder is as polycrystalline silicon ingot casting
When crucible surface release agent, help to obtain that homogeneous grain size, defect are few, dislocation density is low, battery conversion efficiency is high
Polysilicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810548669.2A CN109750351A (en) | 2018-05-31 | 2018-05-31 | A kind of efficient Si of polycrystalline silicon ingot casting3N4Powder |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810548669.2A CN109750351A (en) | 2018-05-31 | 2018-05-31 | A kind of efficient Si of polycrystalline silicon ingot casting3N4Powder |
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| CN109750351A true CN109750351A (en) | 2019-05-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201810548669.2A Pending CN109750351A (en) | 2018-05-31 | 2018-05-31 | A kind of efficient Si of polycrystalline silicon ingot casting3N4Powder |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114477781A (en) * | 2020-10-23 | 2022-05-13 | 中国科学院理化技术研究所 | Preparation process of composite ceramic coating release agent |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356152A (en) * | 1981-03-13 | 1982-10-26 | Rca Corporation | Silicon melting crucible |
| CN101278078A (en) * | 2005-10-06 | 2008-10-01 | 维苏威克鲁斯布公司 | Crucible for crystallizing silicon and producing mtheod thereof |
| CN102409394A (en) * | 2011-12-05 | 2012-04-11 | 苏州纳迪微电子有限公司 | Crucible used for polycrystalline silicon ingot casting and preparation method thereof |
| CN102807389A (en) * | 2012-08-31 | 2012-12-05 | 哈尔滨工业大学 | Preparation method for Si3N4-Si2N2O porous complex phase ceramic |
| CN202913087U (en) * | 2012-10-30 | 2013-05-01 | 烟台核晶陶瓷新材料有限公司 | Ceramic crucible for polycrystalline silicon ingot |
| CN103339300A (en) * | 2010-12-30 | 2013-10-02 | 圣戈本陶瓷及塑料股份有限公司 | Crucible body and method of forming same |
| CN105622108A (en) * | 2015-12-23 | 2016-06-01 | 广东工业大学 | Method for in-situ synthesis of Si3N4-Si2N2O-TiN ternary compound powder |
-
2018
- 2018-05-31 CN CN201810548669.2A patent/CN109750351A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4356152A (en) * | 1981-03-13 | 1982-10-26 | Rca Corporation | Silicon melting crucible |
| CN101278078A (en) * | 2005-10-06 | 2008-10-01 | 维苏威克鲁斯布公司 | Crucible for crystallizing silicon and producing mtheod thereof |
| CN103339300A (en) * | 2010-12-30 | 2013-10-02 | 圣戈本陶瓷及塑料股份有限公司 | Crucible body and method of forming same |
| CN102409394A (en) * | 2011-12-05 | 2012-04-11 | 苏州纳迪微电子有限公司 | Crucible used for polycrystalline silicon ingot casting and preparation method thereof |
| CN102807389A (en) * | 2012-08-31 | 2012-12-05 | 哈尔滨工业大学 | Preparation method for Si3N4-Si2N2O porous complex phase ceramic |
| CN202913087U (en) * | 2012-10-30 | 2013-05-01 | 烟台核晶陶瓷新材料有限公司 | Ceramic crucible for polycrystalline silicon ingot |
| CN105622108A (en) * | 2015-12-23 | 2016-06-01 | 广东工业大学 | Method for in-situ synthesis of Si3N4-Si2N2O-TiN ternary compound powder |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114477781A (en) * | 2020-10-23 | 2022-05-13 | 中国科学院理化技术研究所 | Preparation process of composite ceramic coating release agent |
| CN114477781B (en) * | 2020-10-23 | 2024-05-24 | 中国科学院理化技术研究所 | Preparation process of composite ceramic coating release agent |
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Application publication date: 20190514 |