CN109742205A - A kind of LED epitaxial structure and production method with polarity inversion layer - Google Patents
A kind of LED epitaxial structure and production method with polarity inversion layer Download PDFInfo
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- CN109742205A CN109742205A CN201910011515.4A CN201910011515A CN109742205A CN 109742205 A CN109742205 A CN 109742205A CN 201910011515 A CN201910011515 A CN 201910011515A CN 109742205 A CN109742205 A CN 109742205A
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Abstract
The invention discloses a kind of LED epitaxial structure and production method with polarity inversion layer, the LED epitaxial structure includes: substrate；Buffer layer, undoped gallium nitride layer, the first n type gallium nitride layer, multiple quantum well layer and the p-type gallium nitride layer set gradually over the substrate with first direction, wherein the first direction is directed toward the buffer layer perpendicular to the substrate, and by the substrate；Wherein, the multiple quantum well layer includes the nitrogen polarity inversion layer set gradually in said first direction, InGaN layer, gallium polarity inversion layer and the second n type gallium nitride layer.LED epitaxial structure internal quantum efficiency with higher, photoelectric properties are preferable.
Description
Technical field
The present invention relates to field of semiconductor photoelectron technique, more specifically to a kind of LED with polarity inversion layer
Epitaxial structure and production method.
Background technique
III group nitride material is third generation semiconductor material comprising aluminium nitride, gallium nitride, indium nitride and its correlation three
Member and quaternary compound have direct band gap, are the important semiconducting compounds for preparing high-quantum efficiency LED.
And Typical Representative of the gallium nitride as third generation semiconductor material, have become most promising material
One of, it causes people and greatly pays close attention to and extensive interest.
Between III group-III nitride GaN, AlN and InGaN combination can be formed the consecutive variations from 0.7ev to 6.2ev forbidden band it is wide
The all band LED for spending range, therefore can obtaining blue and green light and ultraviolet light etc. usually utilizes InGaN or AlInGaN ternary
Or in quaternary alloy In or Al content come the wave band to be obtained, wavelength is longer, and In component is higher.
Therefore, it is higher to prepare In component in the LED structure of long-wave band InGaN/GaN, but with the raising of In component,
The lattice mismatch of InGaN will become larger, therefore the InGaN for obtaining high quality is just relatively difficult, is unfavorable for the radiation of electron hole
It is compound, limit the further promotion of its internal quantum efficiency.
Also, with the raising of In component, InGaN under external force, since lattice and coefficient of thermal expansion mismatch etc. are former
Because the piezoelectricity and spontaneous polarization of generation will be bigger, the blue shift and half-peak breadth of GaN material are had adverse effect on.
Summary of the invention
In view of this, to solve the above problems, the present invention provides a kind of LED epitaxial structure and system with polarity inversion layer
Make method, technical solution is as follows:
A kind of LED epitaxial structure with polarity inversion layer, the LED epitaxial structure include:
Substrate；
Buffer layer, undoped gallium nitride layer, the first n type gallium nitride set gradually over the substrate with first direction
Layer, multiple quantum well layer and p-type gallium nitride layer, wherein the first direction is directed toward institute perpendicular to the substrate, and by the substrate
State buffer layer；
Wherein, the multiple quantum well layer includes nitrogen polarity inversion layer, the InGaN set gradually in said first direction
Layer, gallium polarity inversion layer and the second n type gallium nitride layer.
Preferably, the number of plies of the multiple quantum well layer is 1 layer -10 layers, including endpoint value, and multiple quantum well layer described in multilayer
It sets gradually in said first direction.
Preferably, the nitrogen polarity inversion layer is undoped gallium nitride layer.
Preferably, the nitrogen polarity inversion layer is the gallium nitride layer with doped chemical.
Preferably, the doped chemical of the nitrogen polarity inversion layer is Si, doping concentration 1e18/cm3-5e18/cm3, including
Endpoint value.
Preferably, the nitrogen polarity inversion layer with a thickness of 0.2nm-10nm, including endpoint value.
Preferably, the gallium polarity inversion layer is undoped gallium nitride layer.
Preferably, the gallium polarity inversion layer is the gallium nitride layer with doped chemical.
Preferably, the doped chemical of the gallium polarity inversion layer is Si, doping concentration 1e18/cm3-5e18/cm3, including
Endpoint value.
Preferably, the gallium polarity inversion layer with a thickness of 0.2nm-10nm, including endpoint value.
A kind of production method of the LED epitaxial structure with polarity inversion layer, the production method include:
One substrate is provided；
Buffer layer, undoped gallium nitride layer and the first n type gallium nitride successively grown with first direction over the substrate
Layer, wherein the first direction is directed toward the buffer layer perpendicular to the substrate, and by the substrate；
It is successively given birth to away from the side of the undoped gallium nitride layer with the first direction in the first n type gallium nitride layer
Long nitrogen polarity inversion layer, InGaN layer, gallium polarity inversion layer and the second n type gallium nitride layer, to form the multiple quantum well layer；
After the multiple quantum well layer that cycling deposition completes the default number of plies, deviate from institute in the second n type gallium nitride layer
State the side growing P-type gallium nitride layer of gallium polarity inversion layer.
Compared to the prior art, what the present invention realized has the beneficial effect that
The LED epitaxial structure is utilized again by that can grow the InGaN layer of high quality on nitrogen polarity inversion layer
Two n type gallium nitride layer of gallium polarity inversion layer growth regulation, there is no directly grow in addition to InGaN layer on nitrogen polarity inversion layer
Epitaxial layer had both obtained the InGaN layer of high quality in this way, in turn avoided the two N-type nitrogen of direct growth regulation on nitrogen polarity inversion layer
Change gallium layer, cause its rough surface, 0 impurity is incorporated on the high side and resistivity and is difficult to overcome the problems, such as, and then high degree mentions
The high photoelectric properties of the LED epitaxial structure.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer；
Fig. 2 is the structural schematic diagram of multiple quantum well layer provided in an embodiment of the present invention；
Fig. 3 is another structural schematic diagram of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer；
Fig. 4 is another structural schematic diagram of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer；
Fig. 5 is the another structural schematic diagram of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer；
Fig. 6 is the another structural schematic diagram of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer；
Fig. 7 is a kind of stream of the production method of the LED epitaxial structure with polarity inversion layer provided in an embodiment of the present invention
Journey schematic diagram；
Fig. 8-Figure 10 is the corresponding process structure schematic diagram of production method shown in Fig. 7.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing and specific real
Applying mode, the present invention is described in further detail.
With reference to Fig. 1, Fig. 1 is a kind of structure of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer
Schematic diagram, the LED epitaxial structure include:
Substrate 101；
Buffer layer 102, undoped gallium nitride layer 103, the first N set gradually on the substrate 101 with first direction
Type gallium nitride layer 104, multiple quantum well layer 105 and p-type gallium nitride layer 106, wherein the first direction is perpendicular to the substrate
101, and the buffer layer 102 is directed toward by the substrate 101；
It wherein, is the structural schematic diagram of multiple quantum well layer provided in an embodiment of the present invention, the Multiple-quantum with reference to Fig. 2, Fig. 2
Well layer 105 includes nitrogen polarity inversion layer 11, InGaN layer 12, the gallium polarity inversion layer 13 set gradually in said first direction
With the second n type gallium nitride layer 14.
In this embodiment, the LED epitaxial structure is by that can grow high quality on nitrogen polarity inversion layer 11
InGaN layer 12, while 13 growth regulation of gallium polarity inversion layer, two n type gallium nitride layer 14 is utilized again, there is no in nitrogen polarity inversion layer
The epitaxial layer in addition to InGaN layer 12 is directly grown on 11, had both been obtained the InGaN layer 12 of high quality in this way, and had been in turn avoided
Two n type gallium nitride layer 14 of direct growth regulation, causes its rough surface on nitrogen polarity inversion layer 11, and 0 impurity is incorporated on the high side and electric
Resistance rate is difficult to overcome the problems, such as, and then the photoelectric properties for improving the LED epitaxial structure of high degree.
Specifically, the InGaN layer 12 of high In ingredient can be grown first on nitrogen polarity inversion layer 11, its spontaneous pole
Change is contrary with piezoelectric polarization, can effectively improve the raising because of In component, lattice and coefficient of thermal expansion mismatch etc. are former
The shortcomings that becoming larger because of the piezoelectricity and spontaneous polarization of generation.
Secondly, on gallium polarity inversion layer 13 epitaxial layer of the growth in addition to InGaN layer 12 in turn avoid it is anti-in nitrogen polarity
Turn direct two n type gallium nitride layer 14 of growth regulation on layer 11, causes its rough surface, 0 impurity is incorporated on the high side and resistivity and is difficult to
Overcome the problems, such as, while the blue shift and half-peak breadth of GaN material can be reduced, and then high degree improves the LED epitaxy junction
The photoelectric properties of structure.
It further, is the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer with reference to Fig. 3, Fig. 3
Another structural schematic diagram, the number of plies of the multiple quantum well layer 105 is 1 layer -10 layers, including endpoint value, and Multiple-quantum described in multilayer
Well layer 105 is set gradually in said first direction.
It should be noted that traditional multiple quantum well layer is the stacked structure of InGaN layer and GaN layer, and generally recycle 1-10
A circulation, when for 10 circulations, the photoelectric properties of LED epitaxial structure are best.
In this embodiment, the number of plies of the multiple quantum well layer 105 can be 1 layer -10 layers, including endpoint value, in this hair
It in bright embodiment and is not construed as limiting, can be 1 layer or 5 layers of loop structure or 10 layers of loop structure.
It further, is the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer with reference to Fig. 4, Fig. 4
Another structural schematic diagram can be by growing traditional multiple quantum well layer when the number of plies of the multiple quantum well layer 105 is less than 10 layers
401 are supplemented, until 10 layers.
Also, the sequence of the multiple quantum well layer 105 and traditional multiple quantum well layer 401 in a first direction does not limit
It is fixed, for example, Fig. 5 is the another structure of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer with reference to Fig. 5
Schematic diagram is first circularly set 5 layers of traditional multiple quantum well layer 401, recycling 5 layers of multiple quantum well layer 105 of setting；Or with reference to figure
6, Fig. 6 be the another structural schematic diagram of the LED epitaxial structure provided in an embodiment of the present invention with polarity inversion layer, and first circulation is set
Set 2 two layers of traditional multiple quantum well layer 401, recycling 6 layers of multiple quantum well layer 105 of setting, the traditional volume of 2 layers of recycling setting
Sub- well layer 401.
Further, the nitrogen polarity inversion layer 11 is undoped gallium nitride layer.
In this embodiment, the growth temperature of the nitrogen polarity inversion layer 11 is 650 DEG C -750 DEG C, including endpoint value, raw
It is long with a thickness of 0.2nm-10nm, including endpoint value, such as the nitrogen polarity inversion layer 11 with a thickness of 2nm or 5nm or 7nm.
It should be noted that growing the nitrogen polarity inversion layer 11 in NH3, given birth in the environment of TEGa and slight rich ammonia
It is long, wherein NH3Flow be 120SLM-200SLM, the flow of TEGa is 50SCCM-100SCCM, NH3The control of flow can be with
Be it is constant can also be with pulse.
Further, the nitrogen polarity inversion layer 11 is the gallium nitride layer with doped chemical.
In this embodiment, the doped chemical of the nitrogen polarity inversion layer 11 includes, but are not limited to Si, doping concentration
For 1e18/cm3-5e18/cm3, including endpoint value, growth temperature are 650 DEG C -750 DEG C, including endpoint value, growth thickness are
0.2nm-10nm, including endpoint value, for example, the nitrogen polarity inversion layer 11 with a thickness of 2nm or 5nm or 7nm.
It should be noted that growing the nitrogen polarity inversion layer 11 in NH3, given birth in the environment of TEGa and slight rich ammonia
It is long, wherein NH3Flow be 120SLM-200SLM, the flow of TEGa is 50SCCM-100SCCM, NH3The control of flow can be with
Be it is constant can also be with pulse.
Further, the gallium polarity inversion layer 13 is undoped gallium nitride layer.
In this embodiment, the growth temperature of the gallium polarity inversion layer 13 is 750 DEG C -850 DEG C, including endpoint value, raw
It is long with a thickness of 0.2nm-10nm, including endpoint value, such as the gallium polarity inversion layer 13 with a thickness of 3nm or 6nm or 8nm.
It should be noted that growing the gallium polarity inversion layer 13 in NH3, given birth in the environment of TEGa and slight rich gallium
It is long, wherein NH3Flow be 30SLM-60SLM, the flow of TEGa is 100SCCM-200SCCM.
Further, the gallium polarity inversion layer 13 is the gallium nitride layer with doped chemical.
In this embodiment, the doped chemical of the gallium polarity inversion layer 13 includes, but are not limited to Si, and doping concentration is
1e18/cm3-5e18/cm3, including endpoint value, growth temperature is 750 DEG C -850 DEG C, including endpoint value, growth thickness 0.2nm-
10nm, including endpoint value, for example, the gallium polarity inversion layer 13 with a thickness of 3nm or 6nm or 8nm.
It should be noted that growing the gallium polarity inversion layer 13 in NH3, given birth in the environment of TEGa and slight rich gallium
It is long, wherein NH3Flow be 30SLM-60SLM, the flow of TEGa is 100SCCM-200SCCM.
Based on the above-mentioned whole embodiments of the present invention, additionally provide in an alternative embodiment of the invention a kind of with polarity reversion
The production method of the LED epitaxial structure of layer, with reference to Fig. 7, Fig. 7 is provided in an embodiment of the present invention a kind of with polarity inversion layer
The flow diagram of the production method of LED epitaxial structure, the production method include:
S101: as shown in figure 8, providing a substrate 101.
In this step, the substrate 101 includes but is not limited to Sapphire Substrate.
S102: as shown in figure 9, the buffer layer 102, the undoped nitrogen that are successively grown on the substrate 101 with first direction
Change gallium layer 103 and the first n type gallium nitride layer 104, wherein the first direction is perpendicular to the substrate 101, and by the substrate
101 are directed toward the buffer layer 102.
In this step, the undoped gallium nitride layer 103 with a thickness of 2um or so, the first n type gallium nitride layer
104 with a thickness of 4um or so.
S103: as shown in Figure 10, deviate from the one of the undoped gallium nitride layer 103 in the first n type gallium nitride layer 104
Side successively grows nitrogen polarity inversion layer 11, InGaN layer 12, gallium polarity inversion layer 13 and the nitridation of the second N-type with the first direction
Gallium layer 14, to form the multiple quantum well layer 105.
In this step, firstly, deviating from the one of the undoped gallium nitride layer 103 in the first n type gallium nitride layer 104
Side grows the nitrogen polarity inversion layer 11, and the nitrogen polarity inversion layer 11 is for undoped gallium nitride layer or with doped chemical
Gallium nitride layer.The doped chemical of the nitrogen polarity inversion layer 11 includes, but are not limited to Si, doping concentration 1e18/cm3-
5e18/cm3, including endpoint value, growth temperature is 650 DEG C -750 DEG C, including endpoint value, growth thickness 0.2nm-10nm, packet
Include endpoint value, for example, the nitrogen polarity inversion layer 11 with a thickness of 2nm or 5nm or 7nm.It should be noted that growing the nitrogen
Polarity inversion layer 11 is in NH3, grown in the environment of TEGa and slight rich ammonia, wherein NH3Flow be 120SLM-
The flow of 200SLM, TEGa are 50SCCM-100SCCM, NH3The control of flow can be it is constant can also be with pulse.
Secondly, in the nitrogen polarity inversion layer 11 away from described in the growth of the side of the first n type gallium nitride layer 104
InGaN layer 12, the InGaN layer 12 with a thickness of 5nm or so.
Secondly, growing the gallium polarity inversion layer away from the side of the nitrogen polarity inversion layer 11 in the InGaN layer 12
13, the gallium polarity inversion layer 13 is undoped gallium nitride layer or the gallium nitride layer with doped chemical.The gallium polarity is anti-
The doped chemical for turning layer 13 includes, but are not limited to Si, doping concentration 1e18/cm3-5e18/cm3, including endpoint value, growth temperature
Degree is 750 DEG C -850 DEG C, including endpoint value, growth thickness 0.2nm-10nm, including endpoint value, such as gallium polarity reversion
Layer 13 with a thickness of 3nm or 6nm or 8nm.It should be noted that growing the gallium polarity inversion layer 13 in NH3, TEGa and slight
It is grown in the environment of rich gallium, wherein NH3Flow be 30SLM-60SLM, the flow of TEGa is 100SCCM-200SCCM.
Finally, growing second n type gallium nitride away from the side of the InGaN layer 12 in the gallium polarity inversion layer 13
Layer 14, the second n type gallium nitride layer 14 with a thickness of 15nm or so.
S104: as shown in figure 3, after the multiple quantum well layer 105 that cycling deposition completes the default number of plies, described second
N type gallium nitride layer 14 deviates from the side growing P-type gallium nitride layer 106 of the gallium polarity inversion layer 13.
In this step, the p-type gallium nitride layer 106 with a thickness of 100nm or so.
It should be noted that in this step, when the number of plies of the multiple quantum well layer 105 is less than 10 layers, life can be passed through
Long tradition multiple quantum well layer is supplemented, until 10 layers, traditional multiple quantum well layer is the stacked structure of InGaN layer and GaN layer.
Also, the sequence in a first direction of the multiple quantum well layer and traditional multiple quantum well layer is simultaneously not construed as limiting, for example,
First it is circularly set 5 layers of traditional multiple quantum well layer, recycling 5 layers of multiple quantum well layer of setting；Or first it is circularly set 2 two layers of tradition
Multiple quantum well layer, recycling 6 layers of multiple quantum well layer of setting, the traditional multiple quantum well layer of 2 layers of recycling setting.
When top layer is traditional multiple quantum well layer, then in its surface growing P-type gallium nitride layer；When top layer is described more
When quantum well layer, then deviate from the side growing P-type gallium nitride layer of the gallium polarity inversion layer in the second n type gallium nitride layer.
The embodiment of the present invention is only illustrated with a kind of preferred embodiment, is not limited in embodiments of the present invention
It is fixed.
As can be seen from the above description, made of the production method with polarity inversion layer LED epitaxial structure, by
The InGaN layer of high quality can be grown on nitrogen polarity inversion layer, while being nitrogenized again using two N-type of gallium polarity inversion layer growth regulation
Gallium layer, there is no the epitaxial layers directly grown in addition to InGaN layer on nitrogen polarity inversion layer, have both obtained high quality in this way
InGaN layer in turn avoids the two n type gallium nitride layer of direct growth regulation on nitrogen polarity inversion layer, causes its rough surface, 0 impurity
It is incorporated on the high side and resistivity to be difficult to overcome the problems, such as, and then the photoelectric properties for improving the LED epitaxial structure of high degree.
A kind of LED epitaxial structure and production method with polarity inversion layer provided by the present invention has been carried out in detail above
Thin to introduce, used herein a specific example illustrates the principle and implementation of the invention, and above embodiments are said
It is bright to be merely used to help understand method and its core concept of the invention；At the same time, for those skilled in the art, foundation
Thought of the invention, there will be changes in the specific implementation manner and application range, in conclusion the content of the present specification is not
It is interpreted as limitation of the present invention.
It should be noted that all the embodiments in this specification are described in a progressive manner, each embodiment weight
Point explanation is the difference from other embodiments, and the same or similar parts between the embodiments can be referred to each other.
For the device disclosed in the embodiment, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, phase
Place is closed referring to method part illustration.
It should also be noted that, herein, relational terms such as first and second and the like are used merely to one
Entity or operation are distinguished with another entity or operation, without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to contain
Lid non-exclusive inclusion, so that the element that the process, method, article or equipment including a series of elements is intrinsic,
It further include either the element intrinsic for these process, method, article or equipments.In the absence of more restrictions,
The element limited by sentence "including a ...", it is not excluded that in the process, method, article or equipment including the element
In there is also other identical elements.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (11)
1. a kind of LED epitaxial structure with polarity inversion layer, which is characterized in that the LED epitaxial structure includes:
Substrate；
It is the buffer layer that is set gradually over the substrate with first direction, undoped gallium nitride layer, the first n type gallium nitride layer, more
Quantum well layer and p-type gallium nitride layer, wherein the first direction is directed toward described delay perpendicular to the substrate, and by the substrate
Rush layer；
Wherein, the multiple quantum well layer includes the nitrogen polarity inversion layer set gradually in said first direction, InGaN layer, gallium
Polarity inversion layer and the second n type gallium nitride layer.
2. LED epitaxial structure according to claim 1, which is characterized in that the number of plies of the multiple quantum well layer is 1 layer -10
Layer, including endpoint value, and multiple quantum well layer described in multilayer is set gradually in said first direction.
3. LED epitaxial structure according to claim 1, which is characterized in that the nitrogen polarity inversion layer is undoped nitrogen
Change gallium layer.
4. LED epitaxial structure according to claim 1, which is characterized in that the nitrogen polarity inversion layer is with doping member
The gallium nitride layer of element.
5. LED epitaxial structure according to claim 4, which is characterized in that the doped chemical of the nitrogen polarity inversion layer is
Si, doping concentration 1e18/cm3-5e18/cm3, including endpoint value.
6. LED epitaxial structure according to claim 1, which is characterized in that the nitrogen polarity inversion layer with a thickness of
0.2nm-10nm, including endpoint value.
7. LED epitaxial structure according to claim 1, which is characterized in that the gallium polarity inversion layer is undoped nitrogen
Change gallium layer.
8. LED epitaxial structure according to claim 1, which is characterized in that the gallium polarity inversion layer is with doping member
The gallium nitride layer of element.
9. LED epitaxial structure according to claim 8, which is characterized in that the doped chemical of the gallium polarity inversion layer is
Si, doping concentration 1e18/cm3-5e18/cm3, including endpoint value.
10. LED epitaxial structure according to claim 1, which is characterized in that the gallium polarity inversion layer with a thickness of
0.2nm-10nm, including endpoint value.
11. a kind of production method of the LED epitaxial structure with polarity inversion layer, which is characterized in that the production method includes:
One substrate is provided；
Buffer layer, undoped gallium nitride layer and the first n type gallium nitride layer successively grown with first direction over the substrate,
In, the first direction is directed toward the buffer layer perpendicular to the substrate, and by the substrate；
Nitrogen is grown successively with the first direction away from the side of the undoped gallium nitride layer in the first n type gallium nitride layer
Polarity inversion layer, InGaN layer, gallium polarity inversion layer and the second n type gallium nitride layer, to form the multiple quantum well layer；
After the multiple quantum well layer that cycling deposition completes the default number of plies, deviate from the gallium in the second n type gallium nitride layer
The side growing P-type gallium nitride layer of polarity inversion layer.
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| CN114420807A (en) * | 2022-04-01 | 2022-04-29 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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