CN220474630U - Epitaxial structure of HEMT device - Google Patents
Epitaxial structure of HEMT device Download PDFInfo
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- CN220474630U CN220474630U CN202321474604.0U CN202321474604U CN220474630U CN 220474630 U CN220474630 U CN 220474630U CN 202321474604 U CN202321474604 U CN 202321474604U CN 220474630 U CN220474630 U CN 220474630U
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- 230000007547 defect Effects 0.000 claims abstract description 75
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000002131 composite material Substances 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 174
- 239000013047 polymeric layer Substances 0.000 claims description 5
- 239000013078 crystal Substances 0.000 abstract description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 15
- 229910002601 GaN Inorganic materials 0.000 description 10
- 230000015556 catabolic process Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
Abstract
The utility model discloses an epitaxial structure of a HEMT device, which comprises a substrate, wherein a buffer layer, a lattice conversion layer, a polymerization layer, a defect interception layer, a first semiconductor layer, a channel layer and a second semiconductor layer are sequentially laminated on the substrate; the defect interception layer is in a multi-layer superlattice composite stacking structure. The utility model can greatly reduce defects generated by lattice mismatch, improves the quality of crystals and has novel structure.
Description
Technical Field
The utility model belongs to the technical field of microelectronics, and particularly relates to an epitaxial structure of a novel HEMT device.
Background
The third generation semiconductor material, i.e., wide bandgap (Wide Band Gap Semiconductor, WBGS) semiconductor material, was developed after the first generation silicon, germanium, and second generation gallium arsenide, indium phosphide, etc. Among the third generation semiconductor materials, gallium nitride (GaN) has the superior properties of wide band gap, direct band gap, high breakdown electric field, lower dielectric constant, high electron saturation drift velocity, strong radiation resistance, good chemical stability, etc., and becomes a key semiconductor material for manufacturing new generation microelectronic devices and circuits after germanium, silicon, gallium arsenide. Particularly, the high-temperature, high-power, high-frequency and anti-radiation electronic device and the full-wavelength and short-wavelength photoelectric device have the unique advantages, are ideal materials for realizing the high-temperature, high-power, high-frequency and anti-radiation full-wavelength photoelectric devices, are high and new technologies such as microelectronics, power electronics, photoelectrons and the like, and are key basic materials for continuing development after the prop industries such as national defense industry, information industry, electromechanical industry, energy industry and the like enter 21 century.
However, because larger lattice mismatch exists between the gallium nitride HEMT device and the silicon carbide substrate, the sapphire substrate or the monocrystalline silicon substrate, even if a nucleation layer and an AlGaN or GaN filling layer play a role in buffering between the substrate and the GaN layer, the crystal quality of the finally grown GaN layer is not good enough, so that the quality of the HEMT is influenced, the breakdown voltage of the device is reduced, and the electron mobility is reduced, so that the performance of the HEMT device is far lower than the theoretical limit.
Therefore, there is a need for a high-quality epitaxial structure of a HEMT device with novel structure.
Disclosure of Invention
The utility model aims to provide an epitaxial structure of a HEMT device, which can greatly reduce defects generated by lattice mismatch, thereby greatly improving the quality of crystals and having novel structure.
In order to achieve the above object, the present utility model provides an epitaxial structure of a HEMT device, which includes a substrate, on which a buffer layer, a lattice conversion layer, a polymer layer, a defect interception layer, a first semiconductor layer, a channel layer and a second semiconductor layer are sequentially stacked; the defect interception layer is in a multi-layer superlattice composite stacking structure.
Preferably, the defect interception layer of the epitaxial structure of the HEMT device is in a three-layer superlattice composite stacked structure.
Preferably, the defect interception layer of the epitaxial structure of the HEMT device comprises a first defect interception layer, a second defect interception layer and a third defect interception layer which are sequentially stacked, wherein the first defect interception layer is attached to the polymerization layer, and the first semiconductor layer is attached to the third defect interception layer.
Preferably, the first defect interception layer and the third defect interception layer of the epitaxial structure of the HEMT device have the same structure; the second defect interception layer is a GaN structure layer.
Preferably, the substrate of the epitaxial structure of the HEMT device is in a composite layer structure.
Preferably, the lattice conversion layer of the epitaxial structure of the HEMT device is in a composite layer structure.
Preferably, the polymer layer of the epitaxial structure of the HEMT device is a GaN structure layer.
Preferably, the first semiconductor layer of the epitaxial structure of the HEMT device is a GaN structure layer.
Preferably, the channel layer of the epitaxial structure of the HEMT device comprises an AlN structure layer and Al which are stacked R Ga 1－R And an N structure layer.
Preferably, the second semiconductor layer of the epitaxial structure of the HEMT device is a GaN structure layer.
Compared with the prior art, the epitaxial structure of the HEMT device comprises the substrate, and the buffer layer, the lattice conversion layer, the polymerization layer, the defect interception layer, the first semiconductor layer, the channel layer and the second semiconductor layer are sequentially grown on the substrate, so that the epitaxial structure of the HEMT device is of an ordered and multi-layer laminated structure, novel in structure, capable of greatly reducing defects generated by lattice mismatch and improving lattice quality, and further capable of improving the characteristics of electron mobility, breakdown voltage, leakage current and the like of the epitaxial structure of the HEMT device, and suitable for high-voltage high-power electronic devices. At the same time, combine the present realityThe novel defect interception layer is in a multi-layer superlattice composite stacking structure, so that the defect interception layer is formed in an orderly and multi-layer overlapped mode through III-V crystals with different sizes, and lattice defects can be filled up along with the increase of the thickness, so that defects generated by lattice mismatch are further greatly reduced; meanwhile, the longitudinal extension of the defect can be suppressed; further reducing the defect density so that the defect density can be from 10 9 Down to approximately 10 8， Further optimize the defect interception layer of the utility model again, reduce the defect; the crystal lattice quality of the utility model is further improved, and the characteristics of electron mobility, breakdown voltage, leakage current and the like of an epitaxial structure of the HEMT device are further improved, so that the crystal lattice structure is more suitable for application of high-voltage high-power electronic devices, particularly for working at extremely high frequency, and can be widely applied to mobile phones, satellite televisions and radars.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial structure of a HEMT device of the present utility model.
Detailed Description
The technical solutions in the embodiments of the present application are clearly and completely described below with reference to specific embodiments and the accompanying drawings, and the technical solutions of the present utility model are illustrated and described. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure. The following describes the embodiments of the present utility model in detail with reference to the drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model. The present utility model may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the utility model, whereby the utility model is not limited to the specific embodiments disclosed below. Embodiments of the present utility model will now be described with reference to the drawings, wherein like reference numerals represent like elements throughout.
In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present utility model.
As shown in fig. 1, an epitaxial structure 100 of the HEMT device of the present utility model is a stacked structure, the epitaxial structure 100 of the HEMT device includes a substrate 1, and a buffer layer 2, a lattice conversion layer 3, a polymer layer 4, a defect interception layer 5, a first semiconductor layer 6, a channel layer 7 and a second semiconductor layer 8 are sequentially stacked on the substrate 1; the defect interception layer 5 of the present utility model is in a multi-layered superlattice composite stack structure. Specifically, the defect interception layer 5 is in a three-layer superlattice composite stacked structure, the defect interception layer 5 comprises a first defect interception layer 51, a second defect interception layer 52 and a third defect interception layer 53 which are sequentially stacked, the first defect interception layer 51 is attached to the polymeric layer 4, and the first semiconductor layer 6 is attached to the third defect interception layer 53. More specifically, the first defect interception layer 51 of the present utility model is (Al y Ga 1－y An N/GaN) P material layer, wherein y is more than or equal to 0.1 and less than or equal to 0.25, P is a loop number, P is more than or equal to 20, and the thickness is 3-500 nm; further, the first defect intercepting layer 51 of the present utility model is doped with (1 to 9) ×10 in concentration 18 /cm 3 Si or C of (C); the first defect intercepting layer 51 is grown at a temperature of 1000-1300 deg.c and a growth pressure of 500torr (torr is a pressure unit "torr"). Preferably, the first defect interception layer 51 of the present utility model has the same structure as the third defect interception layer 53; and the second defect intercepting layer 52 is a GaN structure layer. More specifically, the second defect intercepting layer 52 of the present utility model is a GaN structural layer having a thickness of 0.1 to 0.5um; further, the second defect intercepting layer 52 of the present utility model has a growth temperature of 900-1100 ℃ and a growth pressure of 500torr. More specifically, the third defect intercepting layer 53 of the present utility model is a (AlyGa 1-yN/GaN) Q material layer, wherein y is 0.1.ltoreq.y.ltoreq.0.25, Q is a loop number, Q is 20 or more, and the thickness is 3 to 500nm; further, the third defect intercepting layer 53 of the present utility model is doped with (1 to 9) ×10 in concentration 18 /cm 3 Si or C of (C); the third defect intercepting layer 53 is grown at a temperature of 1000-1300 ℃ and a growth pressure of 500torr. Therefore, the epitaxial structure 100 of the HEMT device of the utility model comprises the substrate 1, and the buffer layer 2, the lattice conversion layer 3, the polymeric layer 4, the defect interception layer 5, the first semiconductor layer 6, the channel layer 7 and the second semiconductor layer 8 are sequentially grown on the substrate 1, so that the epitaxial structure 100 of the HEMT device of the utility model is of an orderly and multi-layer laminated structure, has novel structure, can greatly reduce defects generated by lattice mismatch, and improves the lattice quality, thereby improving the characteristics of electron mobility, breakdown voltage, leakage current and the like of the epitaxial structure of the HEMT device, and is suitable for high-voltage high-power electronic device application.
In addition, the second defect interception layer 52 in the defect interception layer 5 is an intermediate layer, and the GaN structure layer of the second defect interception layer 52 forms a high-quality epitaxial structure, so that continuous growth is more uniform, and finally, the defect interception layer is further optimized again through the second superlattice recombination of the third defect interception layer 53, so that defects are reduced; the crystal lattice quality of the utility model is further improved, and the characteristics of electron mobility, breakdown voltage, leakage current and the like of an epitaxial structure of the HEMT device are further improved, so that the crystal lattice structure is more suitable for application of high-voltage high-power electronic devices, particularly for working at extremely high frequency, and can be widely applied to mobile phones, satellite televisions and radars.
As shown in fig. 1, preferably, a substrate 1 of an epitaxial structure 100 of the HEMT device of the present utility model has a composite layer structure; specifically, the substrate 1 is compounded by ALN, alO, alON materials to form a composite layer structure; wherein the AlN material accounts for more than 90% of the total mass of the substrate; the thickness of the substrate is 15-50 nm. The substrate 1 of the present utility model can be manufactured by PECVD, sputter or Mocvd deposition, and the growth temperature is 500-700 ℃ and the growth pressure is 500Torr.
As shown in fig. 1, preferably, the lattice conversion layer 3 of the epitaxial structure 100 of the HEMT device of the present utility model has a composite layer structure; specifically, the lattice conversion layer 3 is a composite layer structure of M layers formed by Al0.1Ga0.9N, al0.15Ga0.85N and AlxGa1-xN materials, wherein M is a natural number more than or equal to 2, and X is more than or equal to 0 and less than or equal to 0.5; the thickness of the lattice conversion layer 3 is 100-300 nm; the growth temperature of the lattice conversion layer 3 is 700-1000 ℃ and the growth pressure is 500torr.
As shown in fig. 1, preferably, the polymer layer 4 of the epitaxial structure 100 of the HEMT device of the present utility model is a GaN structure layer; the thickness of the polymeric layer 4 is 0.3-0.5 um; the growth temperature of the polymer layer 4 is 1000-1200 ℃ and the growth pressure is 200torr.
As shown in fig. 1, preferably, the first semiconductor layer 6 of the epitaxial structure of the HEMT device of the present utility model is a GaN structure layer; the thickness of the first semiconductor layer 6 is 0.5-1.5 um; the growth temperature of the first semiconductor layer is 1000-1200 ℃ and the growth pressure is 500torr.
As shown in fig. 1, the channel layer 7 of the epitaxial structure 100 of the HEMT device of the present utility model preferably comprises an AlN structure layer 71 and Al stacked R Ga 1－R An N structural layer 72; wherein the AlN structure layer 71 has a thickness of 1-3 nm and Al R Ga 1－R The thickness of the N structure layer 72 is 100-300 nm; the growth temperature of the channel layer 7 is 1000-1300 ℃ and the growth pressure is 500torr.
As shown in fig. 1, preferably, the second semiconductor layer 8 of the epitaxial structure 100 of the HEMT device of the present utility model is a GaN structure layer; the second semiconductor layer 8 is doped with a concentration of 10 or more 19 /cm 3 Mg of (d); the thickness of the second semiconductor 8 is 0.5-1 um; the growth temperature of the second semiconductor is 900-1000 ℃ and the growth pressure is 200torr.
As shown in fig. 1, the epitaxial structure 100 of the HEMT device of the present utility model comprises a substrate 1, on which a buffer layer 2, a lattice conversion layer 3, and a poly-film are sequentially grown and formed on the substrate 1The epitaxial structure 100 of the HEMT device is of an orderly and multi-layer laminated structure, novel in structure, capable of reducing defects generated by lattice mismatch and improving lattice quality, and therefore the characteristics of electron mobility, breakdown voltage, leakage current and the like of the epitaxial structure of the HEMT device are improved, and the HEMT device is suitable for high-voltage high-power electronic device application. Meanwhile, in combination with the present utility model, the first defect interception layer 51, the second defect interception layer 52 and the third defect interception layer 53 are sequentially stacked to form the defect interception layer 5, the defect interception layer 5 is in a three-layer superlattice composite stack structure, and the first defect interception layer 51 is (Al y Ga 1－y An N/GaN) P material layer, wherein y is more than or equal to 0.1 and less than or equal to 0.25, P is a loop number, P is more than or equal to 20, and the thickness is 3-500 nm; the second defect interception layer 52 is a GaN material layer, and has a thickness of 0.1-0.5 um; the third defect interception layer 53 is a (AlyGa 1-yN/GaN) Q material layer, wherein y is more than or equal to 0.1 and less than or equal to 0.25, Q is a loop number, Q is more than or equal to 20, and the thickness is 3-500 nm; therefore, the defect interception layer 5 is formed in an orderly and multi-layer overlapped mode through the III-V crystal with different sizes, and the lattice defects can be filled with the increase of the thickness, so that the defects generated by lattice mismatch can be greatly reduced, and meanwhile, the longitudinal extension of the defects can be suppressed; further reducing the defect density so that the defect density can be from 10 9 Down to approximately 10 8 The method comprises the steps of carrying out a first treatment on the surface of the Further optimize the defect interception layer of the utility model again, reduce the defect; the crystal lattice quality of the utility model is further improved, and the characteristics of electron mobility, breakdown voltage, leakage current and the like of an epitaxial structure of the HEMT device are further improved, so that the crystal lattice structure is more suitable for application of high-voltage high-power electronic devices, particularly for working at extremely high frequency, and can be widely applied to mobile phones, satellite televisions and radars.
It should be noted that the materials related to the present utility model are all the prior art, and the structural characteristics, physical properties and chemical properties are all known to those skilled in the art, and are not described in detail herein.
It will be evident to those skilled in the art that the utility model is not limited to the details of the foregoing illustrative embodiments, and that the present utility model may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned. Meanwhile, the above disclosure is only of the preferred embodiments of the present utility model, and it is needless to say that the scope of the claims is not limited thereto, and therefore, the present utility model is not limited thereto except as by the claims.
Claims (10)
1. The epitaxial structure of the HEMT device is characterized by comprising a substrate, wherein a buffer layer, a lattice conversion layer, a polymerization layer, a defect interception layer, a first semiconductor layer, a channel layer and a second semiconductor layer are sequentially laminated on the substrate; the defect interception layer is in a multi-layer superlattice composite stacking structure.
2. The epitaxial structure of the HEMT device of claim 1, wherein the defect-blocking layer is a three-layer superlattice composite stack structure.
3. The epitaxial structure of the HEMT device of claim 2, wherein the defect-blocking layer comprises a first defect-blocking layer, a second defect-blocking layer, and a third defect-blocking layer stacked in sequence, the first defect-blocking layer being attached to the polymeric layer, the first semiconductor layer being attached to the third defect-blocking layer.
4. The epitaxial structure of the HEMT device of claim 3, wherein the first defect-blocking layer is the same structure as the third defect-blocking layer; the second defect interception layer is a GaN structure layer.
5. The epitaxial structure of the HEMT device of claim 1, wherein the substrate is a composite layer structure.
6. The epitaxial structure of the HEMT device of claim 1, wherein the lattice conversion layer is a composite layer structure.
7. The epitaxial structure of the HEMT device of claim 1, wherein the polymeric layer is a GaN structural layer.
8. The epitaxial structure of the HEMT device of claim 1, wherein the first semiconductor layer is a GaN structural layer.
9. The epitaxial structure of the HEMT device of claim 1, wherein the channel layer comprises an AlN structure layer and Al in a stacked arrangement R Ga 1－R And an N structure layer.
10. The epitaxial structure of the HEMT device of claim 1, wherein the second semiconductor layer is a GaN structural layer.
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