CN109742205B - LED epitaxial structure with polarity inversion layer and manufacturing method - Google Patents
LED epitaxial structure with polarity inversion layer and manufacturing method Download PDFInfo
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Abstract
The invention discloses an LED epitaxial structure with a polarity inversion layer and a manufacturing method thereof, wherein the LED epitaxial structure comprises: a substrate; the buffer layer, the non-doped gallium nitride layer, the first N-type gallium nitride layer, the multi-quantum well layer and the P-type gallium nitride layer are sequentially arranged on the substrate in a first direction, wherein the first direction is perpendicular to the substrate and points to the buffer layer from the substrate; the multiple quantum well layer comprises a nitrogen polarity reversal layer, an InGaN layer, a gallium polarity reversal layer and a second N-type gallium nitride layer which are sequentially arranged in the first direction. The LED epitaxial structure has high internal quantum efficiency and good photoelectric performance.
Description
Technical Field
The invention relates to the technical field of semiconductor photoelectron, in particular to an LED epitaxial structure with a polarity inversion layer and a manufacturing method thereof.
Background
Group iii nitride materials are third generation semiconductor materials that include aluminum nitride, gallium nitride, indium nitride and their related ternary and quaternary compounds, have direct band gaps, and are important semiconductor compounds for the fabrication of high quantum efficiency LEDs.
Gallium nitride, which is a representative third-generation semiconductor material, has become one of the most promising materials, and has attracted much attention and great interest.
The combination of the III nitride GaN, AlN and InGaN can form a forbidden bandwidth range which is continuously changed from 0.7ev to 6.2ev, so that the full-wave band LED of blue light, green light, ultraviolet light and the like can be obtained, the obtained wave band is obtained by using the content of In or Al In InGaN or AlInGaN ternary or quaternary alloy, and the longer the wavelength, the higher the In component is.
Therefore, the In component In the LED structure for preparing the long-wave-band InGaN/GaN is high, but the lattice mismatch of the InGaN becomes large along with the improvement of the In component, so that the high-quality InGaN is difficult to obtain, the radiative recombination of electron holes is not facilitated, and the further improvement of the internal quantum efficiency is limited.
Moreover, with the increase of In component, InGaN has larger spontaneous polarization and piezoelectric polarization due to lattice and thermal expansion coefficient mismatch under the action of external force, which adversely affects the blue shift and half-peak width of GaN material.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides an LED epitaxial structure with a polarity inversion layer and a manufacturing method thereof, and the technical scheme is as follows:
an LED epitaxial structure having a polarity inversion layer, the LED epitaxial structure comprising:
a substrate;
the buffer layer, the non-doped gallium nitride layer, the first N-type gallium nitride layer, the multi-quantum well layer and the P-type gallium nitride layer are sequentially arranged on the substrate in a first direction, wherein the first direction is perpendicular to the substrate and points to the buffer layer from the substrate;
the multiple quantum well layer comprises a nitrogen polarity reversal layer, an InGaN layer, a gallium polarity reversal layer and a second N-type gallium nitride layer which are sequentially arranged in the first direction.
Preferably, the number of the multiple quantum well layers is 1 to 10, including end points, and the multiple quantum well layers are sequentially arranged in the first direction.
Preferably, the nitrogen polarity reversal layer is an undoped gallium nitride layer.
Preferably, the nitrogen polarity reversal layer is a gallium nitride layer having a doping element.
Preferably, the doping element of the nitrogen polarity reversal layer is Si, and the doping concentration is 1e18/cm3-5e18/cm3Inclusive.
Preferably, the nitrogen polarity inversion layer has a thickness of 0.2nm to 10nm, inclusive.
Preferably, the gallium polarity reversal layer is an undoped gallium nitride layer.
Preferably, the gallium polarity reversal layer is a gallium nitride layer having a doping element.
Preferably, the doping element of the gallium polarity reversal layer is Si, and the doping concentration is 1e18/cm3-5e18/cm3Inclusive.
Preferably, the gallium polarity reversal layer has a thickness of 0.2nm to 10nm, inclusive.
A method of fabricating an LED epitaxial structure with a polarity inversion layer, the method comprising:
providing a substrate;
the buffer layer, the non-doped gallium nitride layer and the first N-type gallium nitride layer sequentially grow on the substrate in a first direction, wherein the first direction is perpendicular to the substrate and points to the buffer layer from the substrate;
sequentially growing a nitrogen polarity reversal layer, an InGaN layer, a gallium polarity reversal layer and a second N-type gallium nitride layer in the first direction on one side of the first N-type gallium nitride layer, which is far away from the undoped gallium nitride layer, so as to form the multi-quantum well layer;
and after the multiple quantum well layers with preset number of layers are grown in a circulating mode, growing a P-type gallium nitride layer on one side, away from the gallium polarity reversal layer, of the second N-type gallium nitride layer.
Compared with the prior art, the invention has the following beneficial effects:
this LED epitaxial structure is through can growing out high-quality InGaN layer on nitrogen polarity reversal layer, utilize gallium polarity reversal layer to grow second N type gallium nitride layer simultaneously again, do not have the epitaxial layer of direct growth except InGaN layer on nitrogen polarity reversal layer, so both obtained high-quality InGaN layer, avoided direct growth second N type gallium nitride layer on nitrogen polarity reversal layer again, cause its surface roughness, 0 impurity merges into the problem that the resistivity is difficult to overcome partially, and then very big degree has improved this LED epitaxial structure's photoelectric property.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a multiple quantum well layer provided in an embodiment of the present invention;
fig. 3 is another structural schematic diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention;
fig. 4 is another structural schematic diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention;
fig. 7 is a schematic flowchart illustrating a method for manufacturing an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention;
fig. 8-10 are schematic views of process structures corresponding to the manufacturing method shown in fig. 7.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention, where the LED epitaxial structure includes:
a substrate 101;
the GaN-based light-emitting diode comprises a buffer layer 102, an undoped GaN layer 103, a first N-type GaN layer 104, a multiple quantum well layer 105 and a P-type GaN layer 106 which are sequentially arranged on a substrate 101 in a first direction, wherein the first direction is perpendicular to the substrate 101 and is directed to the buffer layer 102 from the substrate 101;
referring to fig. 2, fig. 2 is a schematic structural diagram of a multiple quantum well layer according to an embodiment of the present invention, where the multiple quantum well layer 105 includes a nitrogen polarity reversal layer 11, an InGaN layer 12, a gallium polarity reversal layer 13, and a second N-type gallium nitride layer 14, which are sequentially arranged in the first direction.
In this embodiment, in the LED epitaxial structure, the high-quality InGaN layer 12 may be grown on the nitrogen polarity inversion layer 11, and the second N-type gallium nitride layer 14 is grown on the gallium polarity inversion layer 13, and no epitaxial layer other than the InGaN layer 12 is directly grown on the nitrogen polarity inversion layer 11, so that the high-quality InGaN layer 12 is obtained, and the problems that the second N-type gallium nitride layer 14 is directly grown on the nitrogen polarity inversion layer 11, which causes the surface roughness, 0 impurity is incorporated to a large extent and the resistivity is difficult to overcome are avoided, thereby greatly improving the photoelectric performance of the LED epitaxial structure.
Specifically, the InGaN layer 12 with a high In composition may be grown on the nitrogen polarity inversion layer 11, and its spontaneous polarization and piezoelectric polarization directions are opposite, so as to effectively improve the defect that the spontaneous polarization and piezoelectric polarization become larger due to the increase of the In composition and the mismatch of the crystal lattice and the thermal expansion coefficient.
Secondly, the epitaxial layer except the InGaN layer 12 grows on the gallium polarity reversal layer 13, the problems that the second N-type gallium nitride layer 14 grows on the nitrogen polarity reversal layer 11 directly to cause that the surface is rough, 0 impurities are merged into the GaN material slightly and the resistivity is difficult to overcome are solved, the blue shift and the half-peak width of the GaN material can be reduced, and the photoelectric performance of the LED epitaxial structure is improved to a great extent.
Further, referring to fig. 3, fig. 3 is another schematic structural diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention, where the number of layers of the multiple quantum well layer 105 is 1 to 10, including end points, and the multiple quantum well layers 105 are sequentially arranged in the first direction.
It should be noted that the conventional mqw layer is a stacked structure of InGaN and GaN layers, and generally cycles 1-10 cycles, and when 10 cycles are used, the photoelectric performance of the LED epitaxial structure is optimal.
In this embodiment, the number of layers of the mqw layer 105 may be 1 to 10, inclusive, and may be, without limitation, a 1-layer or 5-layer cyclic structure or a 10-layer cyclic structure in the embodiment of the present invention.
Further, referring to fig. 4, fig. 4 is another schematic structural diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention, when the number of layers of the mqw layer 105 is less than 10, the LED epitaxial structure can be supplemented by growing a conventional mqw layer 401 until 10 layers.
Also, the ordering of the mqw layer 105 and the conventional mqw layer 401 in the first direction is not limited, for example, referring to fig. 5, fig. 5 is a further structural diagram of the LED epitaxial structure with the polarity inversion layer provided by the embodiment of the present invention, in which 5 conventional mqw layers 401 are cyclically arranged, and 5 of the mqw layers 105 are cyclically arranged; or referring to fig. 6, fig. 6 is a schematic structural diagram of an LED epitaxial structure with a polarity inversion layer according to an embodiment of the present invention, in which 2 conventional mqw layers 401 are cyclically disposed, 6 conventional mqw layers 105 are cyclically disposed, and 2 conventional mqw layers 401 are cyclically disposed.
Further, the nitrogen polarity reversal layer 11 is an undoped gallium nitride layer.
In this embodiment, the nitrogen polarity inversion layer 11 is grown at a temperature of 650 ℃ to 750 ℃, inclusive, and at a thickness of 0.2nm to 10nm, inclusive, for example, the nitrogen polarity inversion layer 11 is 2nm or 5nm or 7nm thick.
Note that the nitrogen polarity inversion layer 11 is grown in NH3TEGa and slightly ammonia-rich environment, wherein NH3Has a flow rate of 120SLM-200SLM, a flow rate of TEGa of 50SCCM-100SCCM, NH3The control of the flow rate may be constant or pulsed.
Further, the nitrogen polarity reversal layer 11 is a gallium nitride layer with a doping element.
In this embodiment, the doping element of the nitrogen polarity inversion layer 11 includes, but is not limited to, Si, and the doping concentration is 1e18/cm3-5e18/cm3The growth temperature is 650-750 ℃ inclusive, and the growth thickness is 0.2-10 nm inclusive, for example the nitrogen polarity inversion layer 11 is 2nm or 5nm or 7nm thick.
Note that the nitrogen polarity inversion layer 11 is grown in NH3TEGa and slightly ammonia-rich environment, wherein NH3Has a flow rate of 120SLM-200SLM, a flow rate of TEGa of 50SCCM-100SCCM, NH3The control of the flow rate may be constant or pulsed.
Further, the gallium polarity reversal layer 13 is an undoped gallium nitride layer.
In this embodiment, the gallium polarity reversal layer 13 is grown at a temperature of 750 ℃ to 850 ℃, inclusive, and at a thickness of 0.2nm to 10nm, inclusive, for example, the gallium polarity reversal layer 13 is 3nm, or 6nm, or 8nm thick.
It is to be noted that the gallium polarity reversal layer 13 is grown on NH3TEGa and slightly gallium-rich environment, wherein NH3The flow of (1) is 30SLM-60SLM, and the flow of TEGa is 100SCCM-200 SCCM.
Further, the gallium polarity reversal layer 13 is a gallium nitride layer having a doping element.
In this embodiment, the doping element of the gallium polarity reversal layer 13 includes, but is not limited to, Si, and the doping concentration is 1e18/cm3-5e18/cm3The growth temperature is 750-850 ℃ inclusive, and the growth temperature is 750-850 ℃ inclusiveThe length is 0.2nm to 10nm, inclusive, for example the thickness of the gallium polarity reversal layer 13 is 3nm or 6nm or 8 nm.
It is to be noted that the gallium polarity reversal layer 13 is grown on NH3TEGa and slightly gallium-rich environment, wherein NH3The flow of (1) is 30SLM-60SLM, and the flow of TEGa is 100SCCM-200 SCCM.
Based on all the above embodiments of the present invention, in another embodiment of the present invention, a method for manufacturing an LED epitaxial structure with a polarity inversion layer is further provided, referring to fig. 7, fig. 7 is a schematic flow chart of the method for manufacturing an LED epitaxial structure with a polarity inversion layer according to the embodiment of the present invention, where the method for manufacturing includes:
s101: as shown in fig. 8, a substrate 101 is provided.
In this step, the substrate 101 includes, but is not limited to, a sapphire substrate.
S102: as shown in fig. 9, a buffer layer 102, an undoped gallium nitride layer 103, and a first N-type gallium nitride layer 104 are sequentially grown on the substrate 101 in a first direction, wherein the first direction is perpendicular to the substrate 101 and is directed from the substrate 101 to the buffer layer 102.
In this step, the thickness of the undoped gallium nitride layer 103 is about 2um, and the thickness of the first N-type gallium nitride layer 104 is about 4 um.
S103: as shown in fig. 10, a nitrogen polarity reversal layer 11, an InGaN layer 12, a gallium polarity reversal layer 13, and a second N-type gallium nitride layer 14 are sequentially grown in the first direction on the side of the first N-type gallium nitride layer 104 facing away from the undoped gallium nitride layer 103 to form the multiple quantum well layer 105.
In this step, first, the nitrogen polarity reversal layer 11 is grown on the side of the first N-type gallium nitride layer 104 away from the undoped gallium nitride layer 103, where the nitrogen polarity reversal layer 11 is an undoped gallium nitride layer or a gallium nitride layer with a doping element. The doping element of the nitrogen polarity reversal layer 11 includes, but is not limited to, Si, and the doping concentration is 1e18/cm3-5e18/cm3The growth temperature is 650-750 ℃ including end point values,including an end point, of a growth thickness of 0.2nm to 10nm, including an end point, for example a thickness of 2nm or 5nm or 7nm of the nitrogen polarity inversion layer 11. Note that the nitrogen polarity inversion layer 11 is grown in NH3TEGa and slightly ammonia-rich environment, wherein NH3Has a flow rate of 120SLM-200SLM, a flow rate of TEGa of 50SCCM-100SCCM, NH3The control of the flow rate may be constant or pulsed.
Secondly, the InGaN layer 12 is grown on the side of the nitrogen polarity inversion layer 11 away from the first N-type gallium nitride layer 104, and the thickness of the InGaN layer 12 is about 5 nm.
Secondly, the gallium polarity reversal layer 13 is grown on the side of the InGaN layer 12 facing away from the nitrogen polarity reversal layer 11, and the gallium polarity reversal layer 13 is an undoped gallium nitride layer or a gallium nitride layer with a doped element. The doping element of the gallium polarity reversal layer 13 includes, but is not limited to, Si, and the doping concentration is 1e18/cm3-5e18/cm3The growth temperature is 750-850 ℃, inclusive, and the growth thickness is 0.2-10 nm, inclusive, for example the thickness of the gallium polarity reversal layer 13 is 3nm or 6nm or 8nm, inclusive. It is to be noted that the gallium polarity reversal layer 13 is grown on NH3TEGa and slightly gallium-rich environment, wherein NH3The flow of (1) is 30SLM-60SLM, and the flow of TEGa is 100SCCM-200 SCCM.
And finally, growing the second N-type gallium nitride layer 14 on the side of the gallium polarity reversal layer 13 away from the InGaN layer 12, wherein the thickness of the second N-type gallium nitride layer 14 is about 15 nm.
S104: as shown in fig. 3, after the multi-quantum well layer 105 with the preset number of layers is cyclically grown, a P-type gallium nitride layer 106 is grown on the side of the second N-type gallium nitride layer 14 away from the gallium polarity reversal layer 13.
In this step, the thickness of the P-type gallium nitride layer 106 is about 100 nm.
Note that, in this step, when the number of layers of the mqw layer 105 is less than 10, the step may be supplemented by growing a conventional mqw layer, which is a stacked structure of an InGaN layer and a GaN layer, up to 10 layers.
Also, the ordering of the mqw layer and the conventional mqw layer in the first direction is not limited, for example, 5 conventional mqw layers are cyclically disposed first, and 5 of the mqw layers are cyclically disposed; or 2 traditional multiple quantum well layers are circularly arranged, 6 traditional multiple quantum well layers are circularly arranged, and 2 traditional multiple quantum well layers are circularly arranged.
When the top layer is a traditional multi-quantum well layer, a P-type gallium nitride layer grows on the surface of the top layer; and when the top layer is the multi-quantum well layer, growing a P-type gallium nitride layer on one side of the second N-type gallium nitride layer, which is far away from the gallium polarity reversal layer.
The present invention is described in terms of a preferred embodiment, and is not limited to the embodiment.
According to the description, the LED epitaxial structure with the polarity inversion layer, which is manufactured by the manufacturing method, can grow the high-quality InGaN layer on the nitrogen polarity inversion layer, and simultaneously, the second N-type gallium nitride layer grows by utilizing the gallium polarity inversion layer, and the epitaxial layers except the InGaN layer do not directly grow on the nitrogen polarity inversion layer, so that the high-quality InGaN layer is obtained, and the problems that the second N-type gallium nitride layer directly grows on the nitrogen polarity inversion layer, the surface is rough, 0 impurities are more merged and the resistivity is difficult to overcome are solved, and further, the photoelectric performance of the LED epitaxial structure is greatly improved.
The LED epitaxial structure with the polarity inversion layer and the manufacturing method thereof provided by the present invention are described in detail above, and the principle and the implementation of the present invention are explained in this document by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (11)
1. An LED epitaxial structure with a polarity inversion layer, the LED epitaxial structure comprising:
a substrate;
the buffer layer, the non-doped gallium nitride layer, the first N-type gallium nitride layer, the multi-quantum well layer and the P-type gallium nitride layer are sequentially arranged on the substrate in a first direction, wherein the first direction is perpendicular to the substrate and points to the buffer layer from the substrate;
the multiple quantum well layer comprises a nitrogen polarity reversal layer, an InGaN layer, a gallium polarity reversal layer and a second N-type gallium nitride layer which are sequentially arranged in the first direction.
2. The LED epitaxial structure of claim 1, wherein the number of layers of the MQW layer is 1-10 layers, inclusive, and the multiple MQW layers are sequentially arranged in the first direction.
3. The LED epitaxial structure of claim 1, wherein the nitrogen polarity inversion layer is an undoped gallium nitride layer.
4. The LED epitaxial structure of claim 1, wherein the nitrogen polarity inversion layer is a gallium nitride layer with a doping element.
5. The LED epitaxial structure according to claim 4, wherein the doping element of the nitrogen polarity inversion layer is Si, and the doping concentration is 1e18/cm3-5e18/cm3Inclusive.
6. The LED epitaxial structure of claim 1, wherein the nitrogen polarity inversion layer has a thickness of 0.2nm-10nm, inclusive.
7. The LED epitaxial structure of claim 1, wherein the gallium polarity inversion layer is an undoped gallium nitride layer.
8. The LED epitaxial structure of claim 1, wherein the gallium polarity inversion layer is a gallium nitride layer with a doping element.
9. LED epitaxial structure according to claim 8, characterized in that the gallium poleThe doping element of the reverse conversion layer is Si, and the doping concentration is 1e18/cm3-5e18/cm3Inclusive.
10. The LED epitaxial structure of claim 1, wherein the gallium polarity inversion layer has a thickness of 0.2nm-10nm, inclusive.
11. A manufacturing method of an LED epitaxial structure with a polarity inversion layer is characterized by comprising the following steps:
providing a substrate;
the buffer layer, the non-doped gallium nitride layer and the first N-type gallium nitride layer sequentially grow on the substrate in a first direction, wherein the first direction is perpendicular to the substrate and points to the buffer layer from the substrate;
sequentially growing a nitrogen polarity reversal layer, an InGaN layer, a gallium polarity reversal layer and a second N-type gallium nitride layer in the first direction on one side of the first N-type gallium nitride layer, which is far away from the undoped gallium nitride layer, so as to form a multi-quantum well layer;
after the multiple quantum well layers with preset number of layers are grown in a circulating mode, a P-type gallium nitride layer grows on one side, away from the gallium polarity reversal layer, of the second N-type gallium nitride layer;
and when the number of layers of the multi-quantum well layer is less than 10, supplementing the growth of the traditional multi-quantum well layer until 10 layers are obtained, wherein the traditional multi-quantum well layer is a stacked structure of an InGaN layer and a GaN layer.
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| CN114420807B (en) * | 2022-04-01 | 2022-08-12 | 江西兆驰半导体有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
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