CN109741903B - MEMS linear solenoid inductor and manufacturing method thereof - Google Patents
MEMS linear solenoid inductor and manufacturing method thereof Download PDFInfo
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- CN109741903B CN109741903B CN201811509400.XA CN201811509400A CN109741903B CN 109741903 B CN109741903 B CN 109741903B CN 201811509400 A CN201811509400 A CN 201811509400A CN 109741903 B CN109741903 B CN 109741903B
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Abstract
The embodiment of the invention provides an MEMS linear solenoid inductor and a manufacturing method thereof, wherein the manufacturing method comprises the following steps: a silicon substrate, a linear soft magnetic core and a solenoid; the linear soft magnetic iron core is wrapped inside the silicon substrate, a spiral pore passage is formed in the silicon substrate, the linear soft magnetic iron core penetrates through the center of the spiral pore passage, and the solenoid is arranged in the spiral pore passage. The linear soft magnetic iron core and the solenoid of the inductor are all arranged in the silicon substrate, so that the thickness of the silicon substrate is fully utilized, the cross section area of the obtained winding of the inductor is larger, the magnetic flux is higher, and the inductance of the inductor is increased; meanwhile, the silicon substrate can protect the linear soft magnetic iron core and the solenoid, the strength of the inductor is improved, and the shock resistance is good.
Description
Technical Field
The embodiment of the invention relates to the technical field of Micro Electro Mechanical Systems (MEMS), in particular to a MEMS linear solenoid inductor and a manufacturing method thereof.
Background
Micro-Electro-Mechanical systems (MEMS) Micro-scale is composed of a magnetic core and windings, and the size of the magnetic core is greatly reduced and the winding form is changed compared with the conventional inductor. The miniature inductor is widely applied to miniature electronic equipment and information equipment, and can play roles in voltage transformation, current transformation, impedance transformation, isolation, voltage stabilization and the like.
At present, the miniature inductors based on the MEMS technology are mainly divided into two types, namely a planar spiral type and a solenoid type. The planar spiral inductor has a structure that the coil diameter is increased along with the increase of the number of turns of the winding, the total magnetic flux along the iron core cannot be linearly increased but is gradually increased, so that the number of turns of the structure is generally limited, and the total power of the inductor is bottleneck. The solenoid inductor overcomes the limitation of the number of winding turns and can in principle further increase the total power of the inductor.
However, most of the existing micro inductors based on the MEMS technology adopt a film manufacturing process, and the film manufacturing process is an additive manufacturing method, so that most of the obtained micro inductors are on a substrate, the strength of the inductors is difficult to ensure, and the impact resistance is poor; meanwhile, the vertical height obtained by adopting the film manufacturing process is limited, so that the cross section area of the winding of the inductor is small, and the inductor has low inductance value and small magnetic flux.
Disclosure of Invention
Embodiments of the present invention provide a MEMS linear solenoid inductor and method of manufacturing the same that overcomes, or at least partially solves, the above-mentioned problems.
In one aspect, an embodiment of the present invention provides a MEMS linear solenoid inductor, including: a silicon substrate, a linear soft magnetic core and a solenoid; wherein the content of the first and second substances,
the linear soft magnetic iron core is wrapped inside the silicon substrate, a spiral pore passage is formed in the silicon substrate, the linear soft magnetic iron core penetrates through the center of the spiral pore passage, and the solenoid is arranged in the spiral pore passage.
Further, the silicon substrate is divided into an upper silicon substrate and a lower silicon substrate, the linear soft magnetic iron core is divided into an upper iron core and a lower iron core, and the upper iron core and the lower iron core are identical in shape;
the lower surface of the upper silicon substrate is provided with iron core grooves corresponding to the upper iron core in shape, the upper surface of the lower silicon substrate is provided with iron core grooves corresponding to the lower iron core in shape, the upper iron core and the lower iron core are respectively arranged in the corresponding iron core grooves, and the lower surface of the upper silicon substrate and the upper surface of the lower silicon substrate are mutually bonded, so that the lower surface of the upper iron core and the upper surface of the lower iron core are mutually aligned.
Further, the spiral duct comprises a plurality of first horizontal grooves, a plurality of second horizontal grooves and a plurality of vertical through holes;
the first horizontal groove is arranged on the upper surface of the silicon substrate, the second horizontal groove is arranged on the lower surface of the silicon substrate, and the vertical through hole penetrates through the upper surface and the lower surface of the silicon substrate;
the head and the tail of any one first horizontal groove in the spiral pore passage are respectively communicated with two vertical through holes, and the two vertical through holes are respectively communicated with two adjacent second horizontal grooves.
Furthermore, the device also comprises two pins and two pin grooves;
the two pin grooves are arranged on the upper surface of the silicon substrate, the two pin grooves are respectively communicated with the head and the tail of the spiral pore passage, and the two pins are respectively arranged in the two pin grooves.
Furthermore, the linear soft magnetic iron core is made of an iron-nickel alloy material or an iron-cobalt alloy material.
Further, the solenoid is made of metallic copper.
In another aspect, an embodiment of the present invention provides a method for manufacturing a MEMS linear solenoid inductor, including:
fabricating the upper substrate includes:
carrying out first thermal oxidation on a first silicon wafer with a first preset thickness;
according to the structure of the spiral pore channel, a plurality of parallel first horizontal grooves, upper half parts of a plurality of vertical through holes and iron core grooves are respectively etched in the silicon on the upper surface, the interior and the lower surface of the first silicon wafer after the first oxidation;
carrying out second thermal oxidation on the first silicon wafer obtained by silicon deep etching to obtain the upper silicon substrate;
fabricating the lower substrate includes:
carrying out first thermal oxidation on a second silicon wafer with a first preset thickness;
according to the structure of the spiral pore channel, iron core grooves, the lower half parts of a plurality of vertical through holes and a plurality of parallel second horizontal grooves are respectively etched in the silicon on the upper surface, the inner part and the lower surface of the second silicon wafer after the first oxidation;
performing second thermal oxidation on the second silicon wafer to obtain the lower silicon substrate;
and 4, electroplating the spiral pore channel to form a solenoid, and thus obtaining the MEMS linear solenoid inductor.
Further, the electroplating of the upper core in the core groove of the upper silicon substrate to form the upper core specifically includes:
registering a metal mask plate with an iron core groove pattern with an iron core groove on the lower surface of the upper silicon substrate, and then clinging the metal mask plate to the lower surface of the upper silicon substrate;
performing magnetron sputtering on the lower surface of the upper silicon substrate to form metal nickel or metal cobalt with a second preset thickness as a seed layer, and electroplating iron-nickel alloy or iron-cobalt alloy with a third preset thickness in an iron core groove of the upper silicon substrate to obtain an upper iron core; accordingly, the number of the first and second electrodes,
the electroplating in the iron core groove of the lower silicon substrate to form the lower iron core specifically comprises the following steps:
registering a metal mask plate with an iron core groove pattern with an iron core groove on the upper surface of the lower silicon substrate, and then clinging the metal mask plate to the upper surface of the lower silicon substrate;
and after carrying out magnetron sputtering on the upper surface of the lower silicon substrate to obtain metal nickel or metal cobalt with a second preset thickness as a seed layer, electroplating iron-nickel alloy or iron-cobalt alloy with a third preset thickness in an iron core groove of the lower silicon substrate to obtain a lower iron core.
Further, the electroplating in the spiral duct to form the solenoid specifically includes:
performing magnetron sputtering on the lower surface of the lower silicon substrate to obtain metal titanium with a fourth preset thickness as an intermediate layer, performing magnetron sputtering on the intermediate layer to obtain metal copper with a fifth preset thickness as a seed layer, and electroplating the metal copper in the second groove and the vertical through hole of the rotary hole channel until the metal copper is filled to the position of the lower plane of the first groove;
and after the upper surface of the upper silicon substrate is magnetically sputtered with metal copper as a seed layer, electroplating the metal copper until the spiral pore channel is completely filled with the metal copper, and thus obtaining the solenoid.
Further, the fabricating the upper substrate further includes:
according to the structures and the positions of the two pins, deeply etching two pin grooves on the upper surface of the first silicon wafer after the first oxidation; accordingly, the number of the first and second electrodes,
step S4 further includes:
and electroplating to form the two pins in the two pin grooves.
According to the MEMS linear solenoid inductor and the manufacturing method thereof provided by the embodiment of the invention, the linear soft magnetic iron core and the solenoid of the inductor are all arranged in the silicon substrate, the thickness of the silicon substrate is fully utilized, the cross section area of the winding of the obtained inductor is larger, the magnetic flux is improved, and the inductance value of the inductor is increased; meanwhile, the silicon substrate can protect the linear soft magnetic iron core and the solenoid, the strength of the inductor is improved, and the shock resistance is good.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic perspective view of a MEMS linear solenoid inductor according to an embodiment of the present invention;
FIG. 2 is a schematic perspective view of a top silicon substrate according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of a lower silicon substrate according to an embodiment of the present invention;
FIG. 4 is a cross-sectional view of steps (1) through (6) of a MEMS linear solenoid inductor fabrication process in an example provided by an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of steps (7) through (12) of a MEMS linear solenoid inductor fabrication process in accordance with an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of steps (13) through (17) of a process for fabricating a MEMS linear solenoid inductor according to an embodiment of the present invention;
reference numerals:
1-a silicon substrate; 2-straight line shaped soft magnetic iron core;
3-a solenoid; 4-pins;
4' -a pin slot; 11-a silicon-on-substrate;
12-a lower silicon substrate; 21-an upper iron core;
22-a lower core; 31' -a first horizontal trench;
32' -a second horizontal trench; 33' -vertical through holes.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments, but not all embodiments, of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic perspective view of a MEMS linear solenoid inductor according to an embodiment of the present invention, as shown in fig. 1, including: a silicon substrate 1, a linear soft magnetic iron core 2, a solenoid 3 and; wherein the content of the first and second substances,
the linear soft magnetic iron core 2 is wrapped inside the silicon substrate 1, as shown in fig. 2 and 3, a spiral pore passage is formed in the silicon substrate 1, two opposite sides of the linear soft magnetic iron core 2 respectively penetrate through the center of the spiral pore passage, and the solenoid coil 3 is arranged in the spiral pore passage.
Here, since the spiral duct is provided on the silicon substrate 1, the solenoid 3 provided in the spiral duct is also provided inside the silicon substrate 1, that is, both the linear soft magnetic core 2 and the solenoid 3 of the inductor are provided inside the silicon substrate 1.
Specifically, the solenoid 3 and the spiral tunnel are the same in shape, and the solenoid 3 is disposed in the spiral tunnel, and since the straight-line-shaped soft-magnetic core 2 passes through the center of the spiral tunnel and the straight-line-shaped soft-magnetic core 2 also passes through the center of the solenoid 3. When the inductor works, the solenoid 3 is a winding of the inductor, and the head end and the tail end of the solenoid 3 respectively form an input end and an output end of the inductor. It will be appreciated that the number of turns of the solenoid 3 and the number of turns determine the transformer ratio of the inductor.
According to the MEMS linear solenoid inductor provided by the embodiment of the invention, the linear soft magnetic iron core and the solenoid of the inductor are all arranged in the silicon substrate, the thickness of the silicon substrate is fully utilized, the cross section area of the obtained winding of the inductor is larger, and the inductance value and the magnetic flux of the inductor are high; meanwhile, the silicon substrate can protect the linear soft magnetic iron core and the solenoid, the strength of the inductor is improved, and the shock resistance is good.
In the above embodiment, as shown in fig. 1 to 3, the silicon substrate 1 is divided into the upper silicon substrate 11 and the lower silicon substrate 12, the linear soft magnetic core 2 is divided into the upper core 21 and the lower core 22, and the upper core 21 and the lower core 22 have the same shape;
the lower surface of the upper silicon substrate 11 is provided with core slots corresponding to the shape of the upper core 21, the upper surface of the lower silicon substrate 12 is provided with core slots corresponding to the shape of the lower core 22, the upper core 21 and the lower core 22 are respectively arranged in the corresponding core slots, and the lower surface of the upper silicon substrate 11 and the upper surface of the lower silicon substrate 12 are bonded with each other, so that the lower surface of the upper core 21 and the upper surface of the lower core 22 are aligned with each other.
The upper iron core 21 and the lower iron core 22 are two iron cores with the same shape, and are formed by bisecting the linear soft magnetic iron core 2 in the vertical direction, the shapes of the upper iron core and the lower iron core are linear, and the thickness of the upper iron core and the lower iron core is half of that of the linear soft magnetic iron core 2. Similarly, the upper silicon substrate 11 and the lower silicon substrate 12 are formed by bisecting the silicon substrate 1 in the vertical direction, and are symmetrically arranged.
The silicon substrate and the linear soft magnetic iron core are divided into two parts respectively, so that the linear soft magnetic iron core is divided into the upper iron core and the lower iron core to reduce eddy current loss in the iron core when the inductor is integrally convenient to process, and the efficiency of the inductor is further improved.
In the above embodiment, as shown in fig. 2 and 3, the spiral duct and the spiral duct respectively include a plurality of first horizontal grooves 31 ', a plurality of second horizontal grooves 32 ', and a plurality of vertical through holes 33 ';
the first horizontal groove 31 ' is arranged on the upper surface of the silicon substrate 1, the second horizontal groove 32 ' is arranged on the lower surface of the silicon substrate 1, and the vertical through hole 33 ' penetrates through the upper surface and the lower surface of the silicon substrate;
the spiral duct and any one of the first horizontal grooves 31 'are respectively communicated with two vertical through holes 33' from head to tail, and the two vertical through holes 33 'are respectively communicated with two adjacent second horizontal grooves 32'.
Wherein, when the silicon substrate 1 is divided into the upper silicon substrate 11 and the lower silicon substrate 12, each of the vertical through holes 33' is also divided into two parts respectively located on the upper silicon substrate 11 and the lower silicon substrate 12.
Specifically, in the spiral duct, a plurality of first horizontal grooves 31 ' are arranged in parallel with each other, and a plurality of second horizontal grooves 32 ' are also arranged in parallel with each other and communicate through a plurality of vertical through holes 33 '. It is understood that the vertical through hole 33 ' may be linear or arc-shaped, and the first horizontal groove 31 ' and the second horizontal groove 32 ' may also be linear or arc-shaped.
In the above embodiment, as shown in fig. 1, the inductor further includes two pins 4 and two pin slots 4';
the two pin grooves 4 ' are arranged on the upper surface of the silicon substrate 1, the two pin grooves 4 ' are respectively communicated with the head and the tail of the spiral pore canal, and the two pins 4 are respectively arranged in the two pin grooves 4 '.
Specifically, since the two pin grooves 4' communicate with the head and the tail of the spiral duct, the two pins 4 are connected to the head and the tail of the solenoid 3, respectively. When the inductor is in operation, the two pins 4 form the input and output of the inductor, respectively.
In the above embodiment, the linear soft magnetic cores 2 are made of an iron-nickel alloy material or an iron-cobalt alloy material.
In the above embodiment, the solenoid 3 and the solenoid are made of copper metal.
The manufacturing method of the MEMS linear solenoid inductor provided by the embodiment of the invention comprises the following steps:
and 4, electroplating in the spiral pore channel to form a solenoid, and thus obtaining the MEMS linear solenoid inductor.
In step S1, the difference in structure between the upper silicon substrate 11 and the lower silicon substrate 12 is substantially only that the upper surface of the upper silicon substrate 11 is provided with the first horizontal groove 31 ', the lower surface of the lower silicon substrate 12 is provided with the second horizontal groove 32', the rest of the structure is the same, and the silicon substrate 11 and the lower silicon substrate 12 are symmetrically arranged, and the processing procedures before bonding are substantially the same.
In step S2, the upper core 21 and the lower core 22 are formed by electroplating on the upper silicon substrate 11 and the lower silicon substrate 12, respectively, and this step of core electroplating is completed before bonding the upper silicon substrate 11 and the lower silicon substrate 12 because the cores need to be completely wrapped inside the silicon substrates.
In step S3, when bonding the upper silicon substrate 11 and the lower silicon substrate 12, it is necessary to ensure and align the lower surface of the upper core 21 and the upper surface of the lower core 22 with each other to ensure that the magnetic fields of the two are mutually coordinated. Meanwhile, after the upper silicon substrate 11 and the lower silicon substrate 12 are bonded, the horizontal grooves and the vertical through holes which are respectively arranged on the upper silicon substrate 11 and the lower silicon substrate 12 before are combined to form the spiral pore canal and the spiral pore canal.
In step S4, after the spiral tunnel is formed, the solenoid 3 can be formed by plating the relevant metal therein.
Specifically, the first silicon wafer and the second silicon wafer can adopt 1000-micron-thick double-polished silicon wafers and high-resistivity silicon wafers so as to improve the overall insulation of the inductor and reduce eddy current loss at high frequency. And carrying out thermal oxidation on the first silicon wafer and the second silicon wafer to form a thermal oxidation layer with the thickness of 2 microns generally. According to the structures of the linear soft magnetic iron core 2 and the spiral pore canal, silicon deep etching is carried out on the first silicon wafer and the second silicon wafer to obtain an upper silicon substrate 11 and a lower silicon substrate 12, thermal oxidation treatment is carried out on the upper silicon substrate 11 and the lower silicon substrate 12, and the upper silicon substrate 11 and the lower silicon substrate 12 can be used as bases for manufacturing other structures of the inductor. Next, upper core 21 and lower core 22 are formed at corresponding positions of upper silicon substrate 11 and lower silicon substrate 12 by electroplating. The upper iron core 21 and the lower iron core 22 are wrapped inside the silicon substrate 1 by bonding and form a complete spiral tunnel. And electroplating the spiral hole to form the solenoid 3, thus completing the manufacture of the MEMS linear solenoid inductor.
According to the manufacturing method of the MEMS linear solenoid inductor, the silicon substrate is divided into two symmetrical parts to be manufactured independently, iron core electroplating is completed before bonding, the solenoid is formed by electroplating after bonding, multilayer silicon deep etching is not needed in the whole manufacturing process, the processing fault tolerance rate is improved, the repeatability is good, the obtained inductor is high in structural accuracy, and can be compatible with an IC semiconductor process, and the manufacturing method is suitable for large-scale production.
In the above embodiment, the electroplating of the upper core 21 in the core groove of the upper silicon substrate 11 specifically includes:
registering a metal mask plate with an iron core groove pattern with an iron core groove on the lower surface of the upper silicon substrate 11, and then clinging the metal mask plate to the lower surface of the upper silicon substrate 11;
and performing magnetron sputtering on the lower surface of the upper silicon substrate 11 to obtain metal nickel or metal cobalt with a second preset thickness as a seed layer, and electroplating iron-nickel alloy or iron-cobalt alloy with a third preset thickness in an iron core groove of the upper silicon substrate 11 to obtain the upper iron core 21.
Correspondingly, the electroplating of the lower iron core 22 in the iron core groove of the lower silicon substrate 12 specifically includes:
registering a metal mask plate with an iron core slot pattern with an iron core slot on the upper surface of the lower silicon substrate 12, and then clinging the metal mask plate to the upper surface of the lower silicon substrate 12;
after the metal nickel or the metal cobalt with the second preset thickness is magnetically sputtered on the upper surface of the lower silicon substrate 12 as a seed layer, the iron-nickel alloy or the iron-cobalt alloy with the third preset thickness is electroplated in the iron core groove of the lower silicon substrate 12, so that the lower iron core 22 is obtained.
When the iron core is made of iron-nickel alloy, the corresponding seed layer is made of metal nickel; when the iron core is made of iron-cobalt alloy, the corresponding seed layer is made of metal cobalt. The thickness of the seed layer, i.e., the second predetermined thickness, may be determined according to actual process requirements. The thickness of the upper core 21 and the lower core 22, i.e., the third predetermined thickness, is determined according to the depth of the core slot.
Specifically, the processes used in the manufacturing process of the upper core 21 and the lower core 22 are completely the same, but the positions where the two are formed are different, and the two cores can be processed and manufactured separately at the same time.
In the above embodiment, the electroplating of the solenoid 3 in the spiral duct specifically includes:
performing magnetron sputtering on the lower surface of the lower silicon substrate to obtain metal titanium with a fourth preset thickness as an intermediate layer, performing magnetron sputtering on the intermediate layer to obtain metal copper with a fifth preset thickness as a seed layer, and electroplating the metal copper in the second groove and the vertical through hole of the spiral duct until the metal copper is filled to the position of the lower plane of the first groove;
and after the upper surface of the upper silicon substrate is magnetically sputtered with metal copper as a seed layer, electroplating the metal copper until the spiral pore channel is completely filled with the metal copper, and thus obtaining the solenoid.
In the above embodiment, the fabricating the upper substrate further includes:
according to the structures and the positions of the two pins, deeply etching two pin grooves on the upper surface of the first silicon wafer after the first oxidation; accordingly, the number of the first and second electrodes,
step S4 further includes:
and electroplating to form the two pins in the two pin grooves.
The following further describes a method for manufacturing a MEMS linear solenoid inductor by an example, and it should be noted that the following is only an example of the embodiment of the present invention, and the embodiment of the present invention is not limited thereto.
Fig. 4-6 are schematic cross-sectional views of steps (1) to (17) of a manufacturing process of a MEMS linear solenoid transformer according to an embodiment of the present invention, specifically:
(1) a1000 μm thick double polished silicon wafer was used. And the high-resistivity silicon wafer is adopted to improve the insulation of the whole structure and reduce the eddy current loss at high frequency. And thermally oxidizing the silicon wafer to generate a thermal oxidation layer with the thickness of 2 microns on both sides.
(2) And coating photoresist, exposing a first horizontal groove (covering the vertical through hole) and a contact pattern on the upper surface of the upper silicon substrate, exposing a vertical through hole and a second horizontal groove on the upper surface of the lower silicon substrate, respectively exposing the iron core groove pattern on the lower surfaces of the upper silicon substrate and the lower silicon substrate, and forming a spiral pore channel by the first horizontal groove, the second horizontal groove and the vertical through hole.
(3) And removing the silicon dioxide at the exposed position by using BOE (buffered Oxide etch) solution, and patterning.
(4) And gluing for the second time, and exposing the vertical through hole patterns on the upper and lower surfaces of the upper silicon substrate and the lower silicon substrate.
(5) And etching the upper surface and the lower surface of the silicon deep to form a silicon through hole pattern.
(6) The photoresist was removed using piranha solution.
(7) And etching the upper surface by taking the oxide layer as a masking layer to etch a vertical through hole and a horizontal groove on the upper surface. And etching the lower surface by taking the oxide layer as a masking layer to obtain the iron core pattern.
(8) And thermally oxidizing to form an oxide layer with the thickness of 2 microns.
(9) And taking a metal mask plate with an iron core slot pattern, aligning the iron core slot pattern on the metal mask plate with the iron core slot pattern on the lower surface of the second silicon wafer, and tightly attaching the metal mask plate to the lower surface of the silicon wafer.
(10) And performing magnetron sputtering on the lower surface of the substrate to obtain 100nm metal nickel serving as a seed layer.
(11) Electroplating the iron-nickel alloy to enable the iron-nickel alloy to be filled to be 100um away from the surface of the silicon wafer from the bottom.
(12) And (3) enabling the lower surfaces of the upper silicon substrate and the lower silicon substrate to be opposite to each other, and carrying out low-temperature silicon-silicon bonding.
(13) The lower surface is subjected to magnetron sputtering of 100nm metal titanium as an intermediate layer, and then 500nm metal copper is sputtered as a seed layer.
(14) And electroplating metal copper to fill the electroplated copper from the bottom to the position of the lower plane of the top horizontal lead.
(15) The upper surface is magnetically controlled to sputter 500nm of metal copper.
(16) And electroplating metal copper, so that the whole structure of the upper surface is completely covered by the electroplated copper.
(17) And (3) thinning the metal copper on the upper surface and the lower surface by using a Chemical Mechanical Polishing (CMP) machine until the metal copper is thinned to the same height as the surface of the thermal oxidation layer of the silicon chip, and polishing the surface by using the CMP machine to finish the manufacture of the MEMS three-dimensional solenoid type inductor.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (8)
1. A method of fabricating a MEMS linear solenoid inductor, comprising:
step S1, respectively manufacturing an upper silicon substrate and a lower silicon substrate; wherein the content of the first and second substances,
the manufacturing of the upper silicon substrate comprises the following steps:
carrying out first thermal oxidation on a first silicon wafer with a first preset thickness;
according to the structure of the spiral pore channel, a plurality of parallel first horizontal grooves, upper half parts of a plurality of vertical through holes and iron core grooves are respectively photo-etched on the upper surface, the inner part and the lower surface of the first silicon wafer after the first oxidation;
performing second thermal oxidation on the first silicon wafer obtained by photoetching to obtain the upper silicon substrate;
fabricating the lower silicon substrate includes:
carrying out first thermal oxidation on a second silicon wafer with a first preset thickness;
according to the structure of the spiral pore channel, iron core grooves, the lower half parts of a plurality of vertical through holes and a plurality of parallel second horizontal grooves are respectively photo-etched on the upper surface, the interior and the lower surface of the second silicon wafer after the first oxidation;
performing second thermal oxidation on the second silicon wafer to obtain the lower silicon substrate;
step S2, respectively forming an upper iron core and a lower iron core in the iron core grooves of the upper silicon substrate and the lower silicon substrate by electroplating;
step S3, arranging the upper surface of the upper silicon substrate and the lower surface of the lower silicon substrate opposite to each other, and bonding the upper silicon substrate and the lower silicon substrate at a low temperature after the lower surface of the upper iron core and the upper surface of the lower iron core are overlapped with each other, wherein the spiral pore channel is formed in the bonded upper silicon substrate and lower silicon substrate;
step S4, electroplating the spiral pore channel to form a solenoid, and obtaining the MEMS linear solenoid inductor;
the MEMS linear solenoid inductor comprises: a silicon substrate, a linear soft magnetic core and a solenoid; wherein the content of the first and second substances,
the linear soft magnetic iron core is wrapped inside the silicon substrate, a spiral pore passage is formed in the silicon substrate, the linear soft magnetic iron core penetrates through the center of the spiral pore passage, and the solenoid is arranged in the spiral pore passage;
the silicon substrate is divided into an upper silicon substrate and a lower silicon substrate, the linear soft magnetic iron core is divided into an upper iron core and a lower iron core, and the upper iron core and the lower iron core are identical in shape;
the lower surface of the upper silicon substrate is provided with iron core grooves corresponding to the upper iron core in shape, the upper surface of the lower silicon substrate is provided with iron core grooves corresponding to the lower iron core in shape, the upper iron core and the lower iron core are respectively arranged in the corresponding iron core grooves, and the lower surface of the upper silicon substrate and the upper surface of the lower silicon substrate are bonded with each other, so that the lower surface of the upper iron core and the upper surface of the lower iron core are overlapped with each other.
2. The manufacturing method according to claim 1, wherein the electroplating of the upper core in the core slot of the upper silicon substrate comprises:
registering a metal mask plate with an iron core groove pattern with an iron core groove on the lower surface of the upper silicon substrate, and then clinging the metal mask plate to the lower surface of the upper silicon substrate;
performing magnetron sputtering on the lower surface of the upper silicon substrate to form metal nickel or metal cobalt with a second preset thickness as a seed layer, and electroplating iron-nickel alloy or iron-cobalt alloy with a third preset thickness in an iron core groove of the upper silicon substrate to obtain an upper iron core; accordingly, the number of the first and second electrodes,
the electroplating in the iron core groove of the lower silicon substrate to form the lower iron core specifically comprises the following steps:
registering a metal mask plate with an iron core groove pattern with an iron core groove on the upper surface of the lower silicon substrate, and then clinging the metal mask plate to the upper surface of the lower silicon substrate;
and after carrying out magnetron sputtering on the upper surface of the lower silicon substrate to obtain metal nickel or metal cobalt with a second preset thickness as a seed layer, electroplating iron-nickel alloy or iron-cobalt alloy with a third preset thickness in an iron core groove of the lower silicon substrate to obtain a lower iron core.
3. The manufacturing method according to claim 1, wherein the electroplating of the solenoid in the spiral duct specifically comprises:
performing magnetron sputtering on the lower surface of the lower silicon substrate to obtain metal titanium with a fourth preset thickness as an intermediate layer, performing magnetron sputtering on the intermediate layer to obtain metal copper with a fifth preset thickness as a seed layer, and electroplating the metal copper in the second groove and the vertical through hole of the rotary hole channel until the metal copper is filled to the position of the lower plane of the first groove;
and after the upper surface of the upper silicon substrate is magnetically sputtered with metal copper as a seed layer, electroplating the metal copper until the spiral pore channel is completely filled with the metal copper, and thus obtaining the solenoid.
4. The method of manufacturing according to claim 1, wherein the fabricating the upper silicon substrate further comprises:
according to the structures and the positions of the two pins, performing photo-etching on the upper surface of the first silicon wafer after the first oxidation to form two pin grooves; accordingly, the number of the first and second electrodes,
step S4 further includes:
and electroplating to form the two pins in the two pin grooves.
5. The method of manufacturing of claim 1, wherein the spiral duct comprises a plurality of first horizontal grooves, a plurality of second horizontal grooves, and a plurality of vertical through-holes;
the first horizontal groove is arranged on the upper surface of the silicon substrate, the second horizontal groove is arranged on the lower surface of the silicon substrate, and the vertical through hole penetrates through the upper surface and the lower surface of the silicon substrate;
the head and the tail of any one first horizontal groove in the spiral pore passage are respectively communicated with two vertical through holes, and the two vertical through holes are respectively communicated with two adjacent second horizontal grooves.
6. The method of manufacturing of claim 1, further comprising two pins and two pin slots;
the two pin grooves are arranged on the upper surface of the silicon substrate, the two pin grooves are respectively communicated with the head and the tail of the spiral pore passage, and the two pins are respectively arranged in the two pin grooves.
7. The manufacturing method as claimed in claim 1, wherein said straight soft magnetic core is made of an iron-nickel alloy material or an iron-cobalt alloy material.
8. The method of manufacturing of claim 1, wherein the solenoid is made of metallic copper.
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| PCT/CN2019/095062 WO2020087972A1 (en) | 2018-10-30 | 2019-07-08 | Mems solenoid inductor and manufacturing method therefor |
| JP2021523593A JP7267641B2 (en) | 2018-10-30 | 2019-07-08 | MEMS solenoid inductor and manufacturing method thereof |
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