CN109741903A - A kind of MEMS linear solenoidal inductor and its manufacturing method - Google Patents
A kind of MEMS linear solenoidal inductor and its manufacturing method Download PDFInfo
- Publication number
- CN109741903A CN109741903A CN201811509400.XA CN201811509400A CN109741903A CN 109741903 A CN109741903 A CN 109741903A CN 201811509400 A CN201811509400 A CN 201811509400A CN 109741903 A CN109741903 A CN 109741903A
- Authority
- CN
- China
- Prior art keywords
- silicon substrate
- core
- iron core
- silicon
- linear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Micromachines (AREA)
Abstract
The embodiment of the invention provides a kind of MEMS linear solenoidal inductor and its manufacturing methods, comprising: silicon substrate, linear soft magnet core and solenoid；Wherein, the linear soft magnet core is wrapped in inside the silicon substrate, foraminous spiral tract is provided on the silicon substrate, and the linear soft magnet core passes through the center of the foraminous spiral tract, the solenoid is arranged in the foraminous spiral tract.It is provided entirely in the inside of silicon substrate by the linear soft magnet core and solenoid by inductor, takes full advantage of the thickness of silicon substrate, the winding cross-section product of obtained inductor is bigger, and magnetic flux is higher, so that the inductance of inductor increases；Meanwhile silicon substrate can play a protective role to linear soft magnet core and solenoid, improve the intensity of inductor, shock resistance is good.
Description
Technical field
The present embodiments relate to MEMS (MEMS) technical fields, more particularly, to a kind of MEMS linear
Solenoidal inductor and its manufacturing method.
Background technique
MEMS (Micro-Electro-Mechanical System, MEMS) is miniature to be made of magnetic core and winding,
Compared with conventional inductor, magnetic core size significantly reduces, and winding configuration also changes.Compact inductor is set in miniature electronic
The effects of being widely used on standby, information equipment, voltage transformation, current transformation, impedance transformation, isolation, pressure stabilizing can be played.
Two kinds are broadly divided into currently based on the compact inductor of MEMS technology, planar spiral-type and solenoid type.Wherein, it puts down
The structure of surface helix formula inductor increases with umber of turn, and coil diameter becomes larger, and the total magnetic flux along iron core can not be linear
Increase but incrementss are gradually reduced, therefore the number of turns general finite of such structure, the general power of such inductor is caused to be promoted
There is bottleneck.Solenoid type inductor overcomes the limitation of umber of turn, however, it would be possible to further increase inductor general power.
It but is mostly using film making process, film making process currently based on the compact inductor of MEMS technology
It is a kind of increasing material manufacturing method, therefore the most constructions of obtained compact inductor are all to lead to inductor in substrate
Intensity is difficult to ensure that impact resistance is poor；The vertical height that can be obtained using film making process simultaneously is limited, so that inductor
Winding cross-section product it is small, lead to that the inductance value of inductor is low and magnetic flux is small.
Summary of the invention
The embodiment of the invention provides a kind of MEMS for overcoming the above problem or at least being partially solved the above problem is straight
Linear solenoidal inductor and its manufacturing method.
On the one hand the embodiment of the invention provides a kind of MEMS linear solenoidal inductors, comprising: silicon substrate, linear
Soft magnet core and solenoid；Wherein,
The linear soft magnet core is wrapped in inside the silicon substrate, and foraminous spiral tract is provided on the silicon substrate, and
The linear soft magnet core passes through the center of the foraminous spiral tract, and the solenoid is arranged in the foraminous spiral tract.
Further, the silicon substrate is divided into silicon substrate and lower silicon substrate, and the linear soft magnet core is divided into iron
Core and lower core, and the upper core is identical with the lower core shape；
The lower surface of the upper silicon substrate is provided with iron core slot corresponding with the upper core shape, the lower silicon substrate
Upper surface be provided with iron core slot corresponding with the lower core shape, the upper core and the lower core are separately positioned on
In corresponding iron core slot, and the lower surface of the upper silicon substrate and the upper surface of the lower silicon substrate are mutually bonded, so that described
The lower surface of upper core and the upper surface of the lower core are mutually aligned.
Further, the foraminous spiral tract includes a plurality of first level groove, a plurality of second horizontal channel and multiple perpendicular
Clear opening；
The upper surface of the silicon substrate is arranged in the first level groove, and second horizontal channel is arranged in the silicon
The lower surface of substrate, the vertical through-hole penetrate through the upper and lower surfaces of the silicon substrate；
The head and the tail of any first level groove in the foraminous spiral tract are connected to two vertical through-holes respectively, and institute
Two vertical through-holes are stated to be connected to two adjacent second horizontal channels respectively.
It further, further include two pins and two pin slots；
Described two pin slots are arranged in the upper surface of the silicon substrate, described two pin slots respectively with the threaded hole
The head and the tail in road are connected to, and described two pins are separately positioned in described two pin slots.
Further, the linear soft magnet core is made by iron-nickel alloy material or ferrocobalt material.
Further, the solenoid is made by metallic copper.
On the other hand the embodiment of the invention provides a kind of manufacturing methods of MEMS linear solenoidal inductor, comprising:
Step 1, upper silicon substrate and lower silicon substrate are made respectively；Wherein,
Making the upper substrate includes:
First time thermal oxide is carried out to the first silicon wafer of the first preset thickness；
According to the structure of foraminous spiral tract, respectively the upper surface of first silicon wafer after aoxidizing for the first time, inside and
Lower surface silicon color sensor goes out the top half and iron core slot of a plurality of parallel first level groove, multiple vertical through-holes；
Second of thermal oxide is carried out to first silicon wafer obtained through silicon color sensor, obtains the upper silicon substrate；
Making the lower substrate includes:
First time thermal oxide is carried out to the second silicon wafer of the first preset thickness；
According to the structure of foraminous spiral tract, respectively the upper surface of second silicon wafer after aoxidizing for the first time, inside and
Lower surface silicon color sensor goes out iron core slot, the lower half portion of multiple vertical through-holes and a plurality of the second parallel horizontal channel；
Second of thermal oxide is carried out to second silicon wafer, obtains the lower silicon substrate；
Step 2, plating forms upper core and lower iron in the iron core slot of the upper silicon substrate and the lower silicon substrate respectively
Core；
Step 3, the lower surface of the upper surface of the upper silicon substrate and the lower silicon substrate is mutually aligned, by the upper silicon
Substrate and the lower silicon substrate low-temperature bonding form the threaded hole in the upper silicon substrate and the lower silicon substrate after bonding
Road；
Step 4, plating forms solenoid to get MEMS linear solenoidal inductor is arrived in the foraminous spiral tract.
Further, the plating in the iron core slot of the upper silicon substrate forms upper core, specifically includes:
It, will after metal mask version with iron core groove pattern is registrated with the iron core slot on the lower surface of the upper silicon substrate
The metal mask version is tightly attached to the lower surface of the upper silicon substrate；
The upper silicon substrate lower surface magnetron sputtering the second preset thickness metallic nickel or metallic cobalt as seed layer after,
The iron-nickel alloy or ferrocobalt that third preset thickness is electroplated in the iron core slot of the upper silicon substrate obtain upper core；Accordingly
Ground,
The plating in the iron core slot of the lower silicon substrate forms lower core, specifically includes:
It, will after metal mask version with iron core groove pattern is registrated with the iron core slot on the upper surface of the lower silicon substrate
The metal mask version is tightly attached to the upper surface of the lower silicon substrate；
The lower silicon substrate upper surface magnetron sputtering the second preset thickness metallic nickel or metallic cobalt as seed layer after,
The iron-nickel alloy or ferrocobalt that third preset thickness is electroplated in the iron core slot of the lower silicon substrate obtain lower core.
Further, the plating in the foraminous spiral tract forms solenoid, specifically includes:
The lower silicon substrate the 4th preset thickness of lower surface magnetron sputtering Titanium as middle layer, and described
The metallic copper of the 5th preset thickness of magnetron sputtering is as seed layer in middle layer, then in the second groove in the trepanning road and vertical
Plating metal copper in through-hole is until metallic copper is filled to the position of the lower plane of first groove；
The upper silicon substrate upper surface magnetron sputtering metallic copper as seed layer after, plating metal copper is until the spiral shell
Trepanning road is filled up completely by metallic copper to get the solenoid is arrived.
Further, the production upper substrate includes further include:
It is deep in the upper surface silicon of first silicon wafer after aoxidizing for the first time according to the structure of two pins and position
Lose two pin slots out；Correspondingly,
In step s 4 further include:
Plating forms described two pins in described two pin slots.
A kind of MEMS linear solenoidal inductor provided in an embodiment of the present invention and its manufacturing method, by by inductor
Linear soft magnet core and solenoid be provided entirely in the inside of silicon substrate, take full advantage of the thickness of silicon substrate, obtain
The winding cross-section product of inductor is bigger, magnetic flux is improved, so that the inductance value of inductor increases；Meanwhile silicon substrate can
It plays a protective role to linear soft magnet core and solenoid, improves the intensity of inductor, shock resistance is good.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is a kind of schematic perspective view of MEMS linear solenoidal inductor provided in an embodiment of the present invention；
Fig. 2 is the schematic perspective view of upper silicon substrate in the embodiment of the present invention；
Fig. 3 is the schematic perspective view of lower silicon substrate in the embodiment of the present invention；
Fig. 4 is a kind of step of the manufacturing process of MEMS linear solenoidal inductor in example provided in an embodiment of the present invention
Suddenly the schematic cross-section of (1) to (6)；
Fig. 5 is a kind of step of the manufacturing process of MEMS linear solenoidal inductor in example provided in an embodiment of the present invention
Suddenly the schematic cross-section of (7) to (12)；
Fig. 6 is a kind of step of the manufacturing process of MEMS linear solenoidal inductor in example provided in an embodiment of the present invention
Suddenly the schematic cross-section of (13) to (17)；
Appended drawing reference:
1- silicon substrate；2- linear soft magnet core；
3- solenoid；4- pin；
4 '-pin slots；The upper silicon substrate of 11-；
Silicon substrate under 12-；21- upper core；
22- lower core；31 '-first level grooves；
32 '-the second horizontal channels；33 '-vertical through-holes.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical solution in the embodiment of the present invention is explicitly described, it is clear that described embodiment is the present invention
A part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Every other embodiment obtained under the premise of creative work is made, shall fall within the protection scope of the present invention.
Fig. 1 is a kind of schematic perspective view of MEMS linear solenoidal inductor provided in an embodiment of the present invention, such as
Shown in Fig. 1, comprising: silicon substrate 1, linear soft magnet core 2, solenoid 3 and；Wherein,
The linear soft magnet core 2 is wrapped in inside the silicon substrate 1, as shown in Figures 2 and 3, on the silicon substrate 1
It is provided with foraminous spiral tract, and two opposite sides of the linear soft magnet core 2 are each passed through the center of the foraminous spiral tract,
The solenoid 3 is arranged in the foraminous spiral tract.
Wherein, since helical duct is arranged on silicon substrate 1, so the solenoid 3 being arranged in foraminous spiral tract is also to set
It sets in the inside of silicon substrate 1, i.e. the linear soft magnet core 2 of inductor and solenoid 3 inside that is all disposed within silicon substrate 1.
Specifically, solenoid 3 is identical with foraminous spiral tract shape, and solenoid 3 is arranged in foraminous spiral tract, due to linear
Soft magnet core 2 pass through foraminous spiral tract center and, linear soft magnet core 2 also pass through solenoid 3 center.Inductor work
When, solenoid 3 is the winding of inductor, and the head and the tail both ends of solenoid 3 respectively constitute the input terminal and output end of inductor.It can be with
Understand ground, the number of turns of 3 sum of solenoid determines the transformation ratio of inductor.
A kind of MEMS linear solenoidal inductor provided in an embodiment of the present invention, by by the linear soft magnetism of inductor
Iron core and solenoid are provided entirely in the inside of silicon substrate, take full advantage of the thickness of silicon substrate, the winding of obtained inductor
Cross-sectional area is bigger, so that the inductance value of inductor is high and magnetic flux is big；Meanwhile silicon substrate can to linear soft magnet core and
Solenoid plays a protective role, and improves the intensity of inductor, and shock resistance is good.
In the above-described embodiments, described as shown in Figure 1-3, the silicon substrate 1 divides for upper silicon substrate 11 and lower silicon substrate 12
Linear soft magnet core 2 divides for upper core 21 and lower core 22, and the upper core 21 is identical with 22 shape of lower core；
The lower surface of the upper silicon substrate 11 is provided with iron core slot corresponding with 21 shape of upper core, the lower silicon
The upper surface of substrate 12 is provided with iron core slot corresponding with 22 shape of lower core, the upper core 21 and the lower core
22 are separately positioned in corresponding iron core slot, and the upper surface phase of the lower surface of the upper silicon substrate 11 and the lower silicon substrate 12
Mutually bonding, so that the lower surface of the upper core 21 and the upper surface of the lower core 22 are mutually aligned.
Wherein, upper core 21 and lower core 22 are the identical two pieces of iron cores of shape, are by linear soft magnet core 2 vertical
Direction is divided equally, and the shape of the two is also linear, and with a thickness of the half of linear soft magnet core 2.Similarly, upper silicon substrate
11 and lower silicon substrate 12 be to be divided equally by silicon substrate 1 in vertical direction, the two be symmetrical arranged.
By having divided silicon substrate and linear soft magnet core equally two parts respectively, so that inductor is integrally easy to process
While, linear soft magnet core, which is divided into two parts of upper core and lower core, can reduce eddy-current loss in iron core, into
The efficiency of one step raising inductor.
In the above-described embodiments, as shown in Figures 2 and 3, the foraminous spiral tract and described a plurality of first level is respectively included
Groove 31 ', a plurality of second horizontal channel 32 ' and multiple vertical through-holes 33 '；
The upper surface of the silicon substrate 1, the second horizontal channel 32 ' setting is arranged in the first level groove 31 '
In the lower surface of the silicon substrate 1, the vertical through-hole 33 ' penetrates through the upper and lower surfaces of the silicon substrate；
The foraminous spiral tract and it is described in any first level groove 31 ' head and the tail respectively with two vertical through-holes
33 ' connections, and described two vertical through-holes 33 ' are connected to two adjacent second horizontal channels 32 ' respectively.
Wherein, when silicon substrate 1 is divided into upper silicon substrate 11 and lower silicon substrate 12, each vertical through-hole 33 ' is also divided into
It is located at two parts of silicon substrate 11 and lower silicon substrate 12.
Specifically, in foraminous spiral tract, multiple first level grooves 31 ' are arranged in parallel, multiple second horizontal channels
32 ' is also arranged in parallel, and is connected to by multiple vertical through-holes 33 '.It should be understood that vertical through-hole 33 ' can be straight line
Shape or arc, first level groove 31 ' and the second horizontal channel 32 ' are also possible to linear or arc.
In the above-described embodiments, as shown in Figure 1, inductor further includes two pins 4 and two pin slots 4 '；
Described two pin slots 4 ' are arranged in the upper surface of the silicon substrate 1, described two pin slots 4 ' respectively with it is described
The head and the tail of foraminous spiral tract are connected to, and described two pins 4 are separately positioned in described two pin slots 4 '.
Specifically, be connected to due to two pin slots 4 ' with the head and the tail of foraminous spiral tract, so, two pins 4 respectively with helical
The head and the tail of pipe 3 connect.In inductor work, two pins 4 respectively constitute the input terminal and output end of inductor.
In the above-described embodiments, the linear soft magnet core 2 by iron-nickel alloy material or ferrocobalt material production and
At.
In the above-described embodiments, it the solenoid 3 and described is made by metallic copper.
A kind of manufacturing method of MEMS linear solenoidal inductor provided in an embodiment of the present invention, comprising:
Step 1, upper silicon substrate and lower silicon substrate are made respectively；Wherein, making the upper substrate includes: to the first default thickness
First silicon wafer of degree carries out first time thermal oxide；According to the structure of foraminous spiral tract, respectively in described after aoxidizing for the first time
The upper surface of one silicon wafer, inside and lower surface silicon color sensor go out a plurality of parallel first level groove, multiple vertical through-holes it is upper
Half part and iron core slot；Second of thermal oxide is carried out to first silicon wafer obtained through silicon color sensor, obtains the upper silicon
Substrate；Making the lower substrate includes: to carry out first time thermal oxide to the second silicon wafer of the first preset thickness；According to foraminous spiral tract
Structure, go out iron core in upper surface, inside and the lower surface silicon color sensor of second silicon wafer after aoxidizing for the first time respectively
Slot, the lower half portion of multiple vertical through-holes and a plurality of the second parallel horizontal channel；Second of heat is carried out to second silicon wafer
Oxidation, obtains the lower silicon substrate；
Step 2, plating forms upper core and lower iron in the iron core slot of the upper silicon substrate and the lower silicon substrate respectively
Core；
Step 3, the lower surface of the upper surface of the upper silicon substrate and the lower silicon substrate is oppositely arranged, and made on described
After the lower surface of iron core and the upper surface of the upper core are mutually aligned, by the upper silicon substrate and the lower silicon substrate low temperature key
It closes, forms the foraminous spiral tract in the upper silicon substrate and the lower silicon substrate after bonding；
Step 4, plating forms solenoid to get MEMS linear solenoidal inductor is arrived in foraminous spiral tract.
Wherein, in step sl, the difference between upper silicon substrate 11 and lower silicon substrate 12 in structure is substantially only in that,
Upper 11 upper surface of silicon substrate is provided that first level groove 31 ', and lower 12 lower surface of silicon substrate is provided that the second horizontal channel
32 ', the structure of rest part is all the same, and silicon substrate 11 and lower silicon substrate 12 are symmetrical arranged, the processing before the two bonding
Process is almost the same.
In step s 2, plating forms upper core 21 and lower core 22 respectively on upper silicon substrate 11 and lower silicon substrate 12,
Since it is desired that iron core is completely encapsulated within silicon substrate, therefore the step for iron core plating, is being bonded upper silicon substrate 11 and lower silicon lining
It is completed before bottom 12.
In step s3, silicon substrate 11 and when lower silicon substrate 12 in bonding, needs to guarantee and make the lower surface of upper core 21
It is mutually aligned with the upper surface of lower core 22, the magnetic field to guarantee the two is mutually coordinated.Meanwhile upper silicon substrate 11 and lower silicon substrate
After 12 bondings, the horizontal channel and vertical through-hole for being separately positioned on silicon substrate 11 and lower silicon substrate 12 before combine to form spiral
Duct and described.
In step s 4, after foraminous spiral tract is formed, it is only necessary to associated metal be electroplated wherein, solenoid 3 can be formed.
Specifically, double throwing silicon wafers of 1000 μ m-thicks can be used in the first silicon wafer and the second silicon wafer, and using the silicon of high resistivity
Piece reduces the eddy current loss under high frequency to improve the insulating properties of inductor entirety.Hot oxygen is carried out to the first silicon wafer and the second silicon wafer
Change the thermal oxide layer for generally forming 2 μ m-thicks.According to the structure of linear soft magnet core 2 and foraminous spiral tract, to the first silicon wafer
Silicon color sensor is carried out with the second silicon wafer to obtain upper silicon substrate 11 and lower silicon substrate 12 and carry out thermal oxidation herein, it can will be upper
Silicon substrate 11 and lower silicon substrate 12 are used to make the other structures of inductor as substrate.Next, in upper silicon substrate 11 under
The corresponding position of silicon substrate 12 forms upper core 21 and lower core 22 using plating.By being bonded upper core 21 and lower core 22
It is wrapped in the inside of silicon substrate 1, and forms complete foraminous spiral tract.Plating forms solenoid 3 in foraminous spiral tract, that is, completes
The production of MEMS linear solenoidal inductor.
A kind of manufacturing method of MEMS linear solenoidal inductor provided in an embodiment of the present invention, is divided into two for silicon substrate
A symmetrical part is individually made, and iron core plating is completed before bonding, and plating forms solenoid after bonding, entire to make
Process improves the serious forgiveness of processing without multilayer silicon color sensor, has repeatability well, obtained inductor knot
Structure accuracy is high, and can be suitable for large-scale production with IC semiconductor technology compatibility.
In the above-described embodiments, the plating in the iron core slot of the upper silicon substrate 11 forms upper core 21, specific to wrap
It includes:
After metal mask version with iron core groove pattern is registrated with the iron core slot on the lower surface of the upper silicon substrate 11,
The metal mask version is tightly attached to the lower surface of the upper silicon substrate 11；
The upper silicon substrate 11 lower surface magnetron sputtering the second preset thickness metallic nickel or metallic cobalt as seed layer
Afterwards, the iron-nickel alloy or ferrocobalt that third preset thickness is electroplated in the iron core slot of the upper silicon substrate 11 obtain upper core
21。
Correspondingly, the plating in the iron core slot of the lower silicon substrate 12 forms lower core 22, specifically includes:
After metal mask version with iron core groove pattern is registrated with the iron core slot on the upper surface of the lower silicon substrate 12,
The metal mask version is tightly attached to the upper surface of the lower silicon substrate 12；
The lower silicon substrate 12 upper surface magnetron sputtering the second preset thickness metallic nickel or metallic cobalt as seed layer
Afterwards, the iron-nickel alloy or ferrocobalt that third preset thickness is electroplated in the iron core slot of the lower silicon substrate 12 obtain lower core
22。
Wherein, when iron core uses iron-nickel alloy, corresponding seed layer uses metallic nickel；When iron core uses ferrocobalt
When, corresponding seed layer uses metallic cobalt.The thickness of seed layer i.e. the second preset thickness, can according to actual process requirements into
Row determines.The thickness of upper core 21 and lower core 22, that is, third preset thickness is determined according to the depth of iron core slot.
Specifically, upper core 21 is identical with technique used by the manufacturing process of lower core 22, and only the two is formed
Position it is different, the two can independent processing and fabricating simultaneously.
In the above-described embodiments, the plating in the foraminous spiral tract forms solenoid 3, specifically includes:
The lower silicon substrate the 4th preset thickness of lower surface magnetron sputtering Titanium as middle layer, and described
The metallic copper of the 5th preset thickness of magnetron sputtering is as seed layer in middle layer, then in the second groove of the foraminous spiral tract and perpendicular
Plating metal copper in clear opening is until metallic copper is filled to the position of the lower plane of first groove；
The upper silicon substrate upper surface magnetron sputtering metallic copper as seed layer after, plating metal copper is until the spiral shell
Trepanning road is filled up completely by metallic copper to get the solenoid is arrived.
In the above-described embodiments, the production upper substrate includes further include:
It is deep in the upper surface silicon of first silicon wafer after aoxidizing for the first time according to the structure of two pins and position
Lose two pin slots out；Correspondingly,
In step s 4 further include:
Plating forms described two pins in described two pin slots.
It is further illustrated, needs below by manufacturing method of the example to MEMS linear solenoidal inductor
Illustrate, only an example of the embodiment of the present invention, the embodiment of the present invention are not limited thereto below.
Fig. 4-6 is a kind of manufacturing process of MEMS linear solenoid transformer in example provided in an embodiment of the present invention
The schematic cross-section of step (1) to (17), specifically:
(1) silicon wafer is thrown using 1000 μ m-thicks are double.High resistivity wafers are used to improve overall structure insulating properties, reduce high frequency
Lower eddy current loss.Silicon wafer thermal oxide generates two-sided 2 μ m-thick thermal oxide layer.
(2) photoresist is coated, upper silicon substrate upper surface exposes first level groove (covering vertical lead to the hole site), contact figure
The lower surface of case, the vertical through-hole of lower silicon substrate upper surface exposure and the second horizontal channel, upper silicon substrate and lower silicon substrate exposes respectively
Light iron core groove pattern, first level groove, the second horizontal channel and vertical through-hole constitute foraminous spiral tract.
(3) using the silica of BOE (Buffered Oxide Etch) solution removal exposure position, graphically.
The upper and lower surface of (4) second of gluing, upper silicon substrate and lower silicon substrate exposes vertical through-hole pattern.
(5) silicon color sensor upper and lower surface etches through silicon via pattern.
(6) piranha solution is used, photoresist is removed.
(7) upper surface etching is carried out using oxide layer as masking layer, etches vertical through-hole and upper surface horizontal channel.With
Oxide layer carries out lower surface etching as masking layer, etches iron core pattern.
(8) thermal oxide forms 2 μ m-thick oxide layers.
(9) the metal mask version with iron core groove pattern is taken, by iron core groove pattern thereon and one No. two silicon wafer lower surfaces
The alignment of iron core groove pattern, is tightly attached on silicon wafer lower surface.
(10) lower surface magnetron sputtering 100nm metallic nickel is as seed layer.
(11) electroplating iron-nickel alloy makes iron-nickel alloy from underfill to away from silicon chip surface 100um.
(12) lower surface of upper silicon substrate and lower silicon substrate is opposite, carry out low temperature Si-Si bonding.
(13) lower surface magnetron sputtering 100nm Titanium is middle layer, then sputters 500nm metallic copper as seed layer.
(14) plating metal copper makes electro-coppering from underfill to top horizontal conducting wire lower plane position.
(15) upper surface magnetron sputtering 500nm metallic copper.
(16) plating metal copper is completely covered so that upper surface entire infrastructure is plated copper.
(17) using CMP (chemical-mechanical polishing mathing) carry out upper and lower surface metallic copper be thinned, until metallic copper be thinned as
The identical height in silicon wafer thermal oxide layer surface stops, and the system of MEMS three-dimensional spiral line cast inductor is completed on subsequent CMP planarization surface
Make.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of MEMS linear solenoidal inductor characterized by comprising silicon substrate, linear soft magnet core and helical
Pipe；Wherein,
The linear soft magnet core is wrapped in inside the silicon substrate, foraminous spiral tract is provided on the silicon substrate, and described
Linear soft magnet core passes through the center of the foraminous spiral tract, and the solenoid is arranged in the foraminous spiral tract.
2. MEMS linear solenoidal inductor according to claim 1, which is characterized in that the silicon substrate is divided into silicon
Substrate and lower silicon substrate, the linear soft magnet core are divided into upper core and lower core, and the upper core and the lower core
Shape is identical；
The lower surface of the upper silicon substrate is provided with iron core slot corresponding with the upper core shape, the lower silicon substrate it is upper
Surface is provided with iron core slot corresponding with the lower core shape, and the upper core and the lower core are separately positioned on correspondence
Iron core slot in, and the lower surface of the upper silicon substrate and the upper surface of the lower silicon substrate are mutually bonded, so that the upper iron
The lower surface of core and the upper surface of the lower core are mutually aligned.
3. MEMS linear solenoidal inductor according to claim 1, which is characterized in that the foraminous spiral tract includes more
First level groove, a plurality of second horizontal channel and multiple vertical through-holes；
The upper surface of the silicon substrate is arranged in the first level groove, and second horizontal channel is arranged in the silicon substrate
Lower surface, the vertical through-hole penetrates through the upper and lower surfaces of the silicon substrate；
The head and the tail of any first level groove in the foraminous spiral tract are connected to two vertical through-holes respectively, and described two
A vertical through-hole is connected to two adjacent second horizontal channels respectively.
4. MEMS linear solenoidal inductor according to claim 1, which is characterized in that further include two pins and two
A pin slot；
Described two pin slots are arranged in the upper surface of the silicon substrate, described two pin slots respectively with the foraminous spiral tract
Head and the tail are connected to, and described two pins are separately positioned in described two pin slots.
5. MEMS linear solenoidal inductor according to claim 1, which is characterized in that the linear soft magnet core
It is made by iron-nickel alloy material or ferrocobalt material.
6. MEMS linear solenoidal inductor according to claim 1, which is characterized in that the solenoid is by metallic copper
It is made.
7. a kind of manufacturing method of MEMS linear solenoidal inductor as claimed in any one of claims 1 to 6, feature exist
In, comprising:
Step 1, upper silicon substrate and lower silicon substrate are made respectively；Wherein,
Making the upper substrate includes:
First time thermal oxide is carried out to the first silicon wafer of the first preset thickness；
According to the structure of foraminous spiral tract, respectively in upper surface, inside and the following table of first silicon wafer after aoxidizing for the first time
Face silicon color sensor goes out the top half and iron core slot of a plurality of parallel first level groove, multiple vertical through-holes；
Second of thermal oxide is carried out to obtained first silicon wafer is etched deeply through silicon, obtains the upper silicon substrate；
Making the lower substrate includes:
First time thermal oxide is carried out to the second silicon wafer of the first preset thickness；
According to the structure of foraminous spiral tract, respectively in upper surface, inside and the following table of second silicon wafer after aoxidizing for the first time
Face silicon color sensor goes out iron core slot, the lower half portion of multiple vertical through-holes and a plurality of the second parallel horizontal channel；
Second of thermal oxide is carried out to second silicon wafer, obtains the lower silicon substrate；
Step 2, plating forms upper core and lower core in the iron core slot of the upper silicon substrate and the lower silicon substrate respectively；
Step 3, the lower surface of the upper surface of the upper silicon substrate and the lower silicon substrate is mutually aligned, by the upper silicon substrate
With the lower silicon substrate low-temperature bonding, the foraminous spiral tract is formed in the upper silicon substrate and the lower silicon substrate after bonding；
Step 4, plating forms solenoid to get MEMS linear solenoidal inductor is arrived in the foraminous spiral tract.
8. method according to claim 7, which is characterized in that described be electroplated in the iron core slot of the upper silicon substrate is formed
Iron core specifically includes:
It, will be described after metal mask version with iron core groove pattern is registrated with the iron core slot on the lower surface of the upper silicon substrate
Metal mask version is tightly attached to the lower surface of the upper silicon substrate；
The upper silicon substrate lower surface magnetron sputtering the second preset thickness metallic nickel or metallic cobalt as seed layer after, in institute
The iron-nickel alloy or ferrocobalt for stating plating third preset thickness in the iron core slot of silicon substrate obtain upper core；Correspondingly,
The plating in the iron core slot of the lower silicon substrate forms lower core, specifically includes:
It, will be described after metal mask version with iron core groove pattern is registrated with the iron core slot on the upper surface of the lower silicon substrate
Metal mask version is tightly attached to the upper surface of the lower silicon substrate；
The lower silicon substrate upper surface magnetron sputtering the second preset thickness metallic nickel or metallic cobalt as seed layer after, in institute
The iron-nickel alloy or ferrocobalt for stating plating third preset thickness in the iron core slot of lower silicon substrate obtain lower core.
9. method according to claim 7, which is characterized in that plating forms solenoid in the foraminous spiral tract, specific to wrap
It includes:
The lower silicon substrate the 4th preset thickness of lower surface magnetron sputtering Titanium as middle layer, and in the centre
The metallic copper of the 5th preset thickness of magnetron sputtering is as seed layer on layer, then second groove and vertical through-hole in the trepanning road
Interior plating metal copper is until metallic copper is filled to the position of the lower plane of first groove；
The upper silicon substrate upper surface magnetron sputtering metallic copper as seed layer after, plating metal copper is until the threaded hole
Road is filled up completely by metallic copper to get the solenoid is arrived.
10. method according to claim 7, which is characterized in that the production upper substrate includes further include:
According to the structure of two pins and position, go out in the upper surface silicon color sensor of first silicon wafer after aoxidizing for the first time
Two pin slots；Correspondingly,
In step s 4 further include:
Plating forms described two pins in described two pin slots.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811509400.XA CN109741903B (en) | 2018-12-11 | 2018-12-11 | MEMS linear solenoid inductor and manufacturing method thereof |
| US17/290,553 US20220013275A1 (en) | 2018-10-30 | 2019-07-08 | Mems solenoid inductor and manufacturing method thereof |
| JP2021523593A JP7267641B2 (en) | 2018-10-30 | 2019-07-08 | MEMS solenoid inductor and manufacturing method thereof |
| PCT/CN2019/095062 WO2020087972A1 (en) | 2018-10-30 | 2019-07-08 | Mems solenoid inductor and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811509400.XA CN109741903B (en) | 2018-12-11 | 2018-12-11 | MEMS linear solenoid inductor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109741903A true CN109741903A (en) | 2019-05-10 |
| CN109741903B CN109741903B (en) | 2021-02-09 |
Family
ID=66358855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811509400.XA Active CN109741903B (en) | 2018-10-30 | 2018-12-11 | MEMS linear solenoid inductor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109741903B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020087972A1 (en) * | 2018-10-30 | 2020-05-07 | 北京航空航天大学 | Mems solenoid inductor and manufacturing method therefor |
| CN111130296A (en) * | 2019-12-26 | 2020-05-08 | 北京航空航天大学 | Electromagnetic vibration energy collector and manufacturing method thereof |
| CN113452234A (en) * | 2021-07-26 | 2021-09-28 | 北京航空航天大学 | Ultra-miniature voice coil motor based on MEMS three-dimensional coil |
| CN114898986A (en) * | 2022-05-05 | 2022-08-12 | 北京航空航天大学 | Z-type MEMS double-layer solenoid inductance double-layer coil and integrated preparation method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101553890A (en) * | 2006-11-14 | 2009-10-07 | 美商·帕斯脉冲工程有限公司 | Wire-less inductive devices and methods |
| JP2013078144A (en) * | 2007-04-13 | 2013-04-25 | Murata Mfg Co Ltd | Antenna module |
| US20140061854A1 (en) * | 2011-09-06 | 2014-03-06 | Analog Devices, Inc. | Small size and fully integrated power converter with magnetics on chip |
-
2018
- 2018-12-11 CN CN201811509400.XA patent/CN109741903B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101553890A (en) * | 2006-11-14 | 2009-10-07 | 美商·帕斯脉冲工程有限公司 | Wire-less inductive devices and methods |
| JP2013078144A (en) * | 2007-04-13 | 2013-04-25 | Murata Mfg Co Ltd | Antenna module |
| US20140061854A1 (en) * | 2011-09-06 | 2014-03-06 | Analog Devices, Inc. | Small size and fully integrated power converter with magnetics on chip |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020087972A1 (en) * | 2018-10-30 | 2020-05-07 | 北京航空航天大学 | Mems solenoid inductor and manufacturing method therefor |
| CN111130296A (en) * | 2019-12-26 | 2020-05-08 | 北京航空航天大学 | Electromagnetic vibration energy collector and manufacturing method thereof |
| CN111130296B (en) * | 2019-12-26 | 2021-12-07 | 北京航空航天大学 | Electromagnetic vibration energy collector and manufacturing method thereof |
| CN113452234A (en) * | 2021-07-26 | 2021-09-28 | 北京航空航天大学 | Ultra-miniature voice coil motor based on MEMS three-dimensional coil |
| CN114898986A (en) * | 2022-05-05 | 2022-08-12 | 北京航空航天大学 | Z-type MEMS double-layer solenoid inductance double-layer coil and integrated preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109741903B (en) | 2021-02-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109741903A (en) | A kind of MEMS linear solenoidal inductor and its manufacturing method | |
| JP7267641B2 (en) | MEMS solenoid inductor and manufacturing method thereof | |
| CN109326421A (en) | A kind of MEMS endless solenoid inductor and its manufacturing method | |
| TWI291704B (en) | Simplified surface-mount devices and methods | |
| US20030005569A1 (en) | Ultra-miniature magnetic device | |
| CN103093922B (en) | Common-mode filter | |
| US20030070282A1 (en) | Ultra-miniature magnetic device | |
| US20190326041A1 (en) | Coil component and method of manufacturing the same | |
| CN101494112A (en) | Method of manufacturing a coil inductor | |
| CN104977548B (en) | A kind of porous core structure micro fluxgate sensor | |
| US7423509B2 (en) | Coil comprising several coil branches and micro-inductor comprising one of the coils | |
| JP7378166B2 (en) | MEMS solenoid transformer and its manufacturing method | |
| KR101887106B1 (en) | Micro Inductor and Method of Manufacturing the Same | |
| JP2019140148A (en) | Coil component and manufacturing method thereof | |
| CN109390144A (en) | A kind of MEMS endless solenoid transformer and its manufacturing method | |
| CN109599249A (en) | A kind of back-shaped solenoid transformer of MEMS and its manufacturing method | |
| AU2020101712A4 (en) | A MEMS miniaturized solenoid transformer and its manufacturing method | |
| CN104241188B (en) | Method for manufacturing three-dimensional integrated inductor structure | |
| CN112599321B (en) | Miniature three-dimensional solenoid transformer and digital isolator | |
| EP3393966B1 (en) | A method for manufacturing a hollow mems structure | |
| CN213691640U (en) | Miniature three-dimensional solenoid transformer and digital isolator | |
| AU2020101768A4 (en) | A MEMS miniaturized solenoid inductor and manufacturing method thereof | |
| WO2000005734A1 (en) | Ultra-miniature magnetic device | |
| US20120112296A1 (en) | Semiconductor Inductor with a Serpentine Shaped Conductive Wire and a Serpentine Shaped Ferromagnetic Core and a Method of Forming the Semiconductor Inductor | |
| CN106898458A (en) | Inductor and forming method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |