CN109735818A - A kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology - Google Patents
A kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology Download PDFInfo
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- CN109735818A CN109735818A CN201910156618.XA CN201910156618A CN109735818A CN 109735818 A CN109735818 A CN 109735818A CN 201910156618 A CN201910156618 A CN 201910156618A CN 109735818 A CN109735818 A CN 109735818A
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- magnetron sputtering
- power impulse
- impulse magnetron
- toner cartridge
- sputtering technology
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- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 title claims abstract description 58
- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 49
- 239000011159 matrix material Substances 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 238000010884 ion-beam technique Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910001385 heavy metal Inorganic materials 0.000 claims description 3
- 239000002086 nanomaterial Substances 0.000 claims description 3
- 238000009738 saturating Methods 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 30
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000002547 anomalous effect Effects 0.000 description 1
- 238000000541 cathodic arc deposition Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
The present invention relates to a kind of toner cartridge preparation methods of combination high-power impulse magnetron sputtering technology, including matrix, with vacuum system interconnected, high-power impulse magnetron sputtering system, vacuum cathode arc depositing system and control system, matrix is prepared into toner cartridge in conjunction with vacuum cathode arc depositing system by high-power impulse magnetron sputtering system；By the way that high-power impulse magnetron sputtering is combined with vacuum cathode arc depositing system, change the Potential Distributing in plasma section, plasma density is improved, solves the problems, such as that HIPIMS deposition rate is low to a certain extent, while effectively improving film base interface bonding state, the compactness of film layer is good, the film color of preparation is adjustable according to thin film composition, and deposition rate increases, and service performance is excellent, interface performance can be improved, improve the tribological property of film.
Description
Technical field
The present invention relates to toner cartridge preparation technical fields, more specifically refer to a kind of combination high-power impulse magnetron sputtering skill
The toner cartridge preparation method of art.
Background technique
As various office equipment become auxiliary tool indispensable in people's Working Life, one of main peripheral hardware of computer
The high-frequency of laser printer use, but also the printing consumables to match therewith, such as pound the consumption of drum with annual percentage
More than 30 speed it is increasing.Production one new drum of pounding needs to consume the resources such as a large amount of petroleum, the waste and old weight pounded in drum
Metallic element and remaining carbon dust enter air, water body, soil and can cause great harm to environment.So improving making for toner cartridge
With the service life, the consumption for reducing toner cartridge whether economically or on environmental angle suffers from important meaning.It is beaten according to laser
The working principle of print machine, the service life of toner cartridge depend primarily on the tribological property of toner cartridge material surface.It is thus heavy on toner cartridge surface
A product protective layer increases its frictional behaviour while not influencing toner cartridge photobehavior, can effectively improve the longevity of toner cartridge
Life.
Firstly, compared with conventional magnetron sputtering, though HIPIMS is all low temperature process, due to target ion height ionization,
It may produce up to hundreds of mA/cm2Ion beam current bombardment, the film deposited has the advantages that
(1) under the influence of electronics anomalous transport, ion transport mechanism transformation is horizontal and vertical orthogonal motion mechanism, greatly
Width is improved around plating ability, and can provide electric field by applying substrate bias, is controlled target ion motion direction, is realized comprehensive
Uniform deposition is conducive to prepare even compact film on complex parts surface.
(2) high density ion beam current bombards matrix surface, is injected into film and base while removing matrix surface pollution
Body interface changes the orientation and surface texture of matrix, makes to form local epitaxial growth between film and matrix, be chemically bonded
Interface substantially enhances film substrate bond strength.
(3) deposition and atomic dispersion surface energy can be improved in ion bombardment, promotes the repetition forming core rate and migration of crystal grain
Rate, and then the columnar crystal structure through film thickness is inhibited to be formed, the consistency and uniformity of film are improved, it is hard to improve film
Degree, wear-resisting and anti-corrosion etc. performances.
HIPIMS technology has film deposition process control good, film layer as a kind of high ionization level magnetron sputtering technique
The advantages of performance (including film-substrate cohesion, mechanical property, wear resistance and resistance to chemical corrosion etc.) substantially improves.
But from the perspective of industrialization technology application, which has the drawback that deposition rate is too low, this may be to restrict the skill
The main reason for art develops.Although in addition, the ionization level of the technology is high compared with the ionization level of customary DC magnetron sputtering, for
The metal targets of certain low sputtering rastes, system particle ionization level need to be further increased, this is also to limit this technology
The key of popularization and application.
Caused by HIPIMS low deposition rate is sucked back by splash-proofing sputtering metal ion by target, only metal ion is effectively collected
And be transported near matrix, it is likely to reduce the loss of deposition rate.It is combined with vacuum cathode arc depositing system, on workpiece
Apply negative high voltage, i.e., the Potential Distributing between changeable plasma slab forms low potential area near workpieces, attracts metal ion
It to workpiece motion s, and then solves the problems, such as that HIPIMS deposition rate is low to a certain extent, while effectively improving film base interface
Bonding state improves film quality.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of toner cartridge systems of combination high-power impulse magnetron sputtering technology
Preparation Method combines high-power impulse magnetron sputtering with vacuum cathode arc depositing system, can improve interface performance, improves thin
The tribological property of film.
In order to solve the above technical problem, the present invention provides a kind of toner cartridge systems of combination high-power impulse magnetron sputtering technology
Preparation Method, including matrix and vacuum system interconnected, high-power impulse magnetron sputtering system, vacuum cathode arc deposition system
System and control system, described matrix pass through the high-power impulse magnetron sputtering system and the vacuum cathode arc depositing system knot
Conjunction is prepared into toner cartridge；
The toner cartridge preparation method of the combination high-power impulse magnetron sputtering technology, method and step are as follows:
S01. high and low energy is carried out to described matrix surface using heavy metal and gas hybrid plasma alternately to clean；
S02. secondary cleaning is carried out to described matrix using high-power impulse magnetron sputtering system (HIPIMS)；
S03. the vacuum cathode arc depositing system (FCVA) utilizes double 90 degree of Magnetic filter deposition methods using carbon target as cathode
The deposition of high-densit DLC coating is carried out on the matrix；
S04. using anode layer gas ion source to the DLC coating carry out nanostructure etch to be formed 1-3nm nothing it is fixed
Shape is anti-reflection and wearing layer；
S05. the high-power impulse magnetron sputtering system and/or the vacuum cathode arc depositing system separately or concurrently into
Row deposition, the two ion beam are distributed in angle, are prepared into toner cartridge.
Further scheme is that the carbon ion that the carbon target generates sequentially passes through the first flash line packet and T-type Magnetic filter is curved
Pipe is T-type Magnetic filter deposition method.
Further scheme is 0~200Hz of frequency of the first flash line packet, and electric current is 0~50A.
Further scheme is that the T-type magnetic filter positive bias uses pulsed, frequency 20-100Hz, voltage 10-
30V。
Further scheme is that the magnetic field of the bend pipe uses three pieces of line packets, adjacent with anode canister for flash line packet, frequency
Rate is 20-80Hz, and electric current 0-20A, medium line packet is AC line packet 0-5A.
Further scheme is that it is high impulse focal line packet, electric current 30-200A, frequency 30- that the vacuum chamber, which connects,
300Hz。
Further scheme is the ion of the high-power impulse magnetron sputtering system and the vacuum cathode arc depositing system
The angle of the angle of beam is 30~90 degree.
Further scheme is the vacuum cathode arc depositing system (FCVA) and the high-power impulse magnetron sputtering system
(HIPIMS) it is provided with cooling system.
Further scheme is that the sample of described matrix is located in vacuum chamber.
Compared with the prior art, the invention has the advantages that: the present invention is lower in operating temperature, is suitable for various substrates,
The plasma density of extraction is higher, and film layer compactness is good, and binding force is good, by by high-power impulse magnetron sputtering and vacuum
Cathodic arc deposition system combines, and changes the Potential Distributing in plasma section, improves plasma density, to a certain extent
It solves the problems, such as that HIPIMS deposition rate is low, while effectively improving film base interface bonding state, the compactness of film layer is good, system
Standby film color is adjustable according to thin film composition, and deposition rate increases, and service performance is excellent, can improve interface performance,
Improve the tribological property of film.
Detailed description of the invention
Fig. 1 is the structure of system equipment schematic diagram of the specific embodiment of the invention；
Fig. 2 is the operation principle schematic diagram of the specific embodiment of the invention.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
As depicted in figs. 1 and 2, specific embodiments of the present invention, including matrix and vacuum system interconnected, Gao Gong
Rate pulsed magnetron sputtering system, vacuum cathode arc depositing system and control system, matrix pass through high-power impulse magnetron sputtering system
System is prepared into toner cartridge in conjunction with vacuum cathode arc depositing system；
In conjunction with the toner cartridge preparation method of high-power impulse magnetron sputtering technology, method and step is as follows:
S01. high and low energy is carried out to matrix surface using heavy metal and gas hybrid plasma alternately to clean；
S02. secondary cleaning is carried out to matrix using high-power impulse magnetron sputtering system (HIPIMS)；
S03. vacuum cathode arc depositing system (FCVA) is using carbon target as cathode, using double 90 degree of Magnetic filter deposition methods in base
The deposition of high-densit DLC coating is carried out on body；
S04. using anode layer gas ion source to the DLC coating carry out nanostructure etch to be formed 1-3nm nothing it is fixed
Shape is anti-reflection and wearing layer；
S05. high-power impulse magnetron sputtering system and/or vacuum cathode arc depositing system are separately or concurrently deposited,
The two ion beam is distributed in angle, is prepared into toner cartridge.
Further, the carbon ion that carbon target generates sequentially passes through the first flash line packet and T-type magnetic filter, is T-type
Magnetic filter deposition method.
Further, 0~200Hz of frequency of the first flash line packet, electric current are 0~50A.
Further, T-type magnetic filter positive bias uses pulsed, frequency 20-100Hz, voltage 10-30V.
Further, the magnetic field of bend pipe uses three pieces of line packets, adjacent with anode canister for flash line packet, frequency 20-
80Hz, electric current 0-20A, medium line packet are AC line packet 0-5A.
Further, it is high impulse focal line packet, electric current 30-200A, frequency 30-300Hz that vacuum chamber, which connects,.
Further, the angle of the angle of the ion beam of high-power impulse magnetron sputtering system and vacuum cathode arc depositing system
Degree is 30~90 degree.
Vacuum cathode arc depositing system (FCVA) and the high-power impulse magnetron sputtering system (HIPIMS) are provided with cold
But system.
Further, the sample of matrix is located in vacuum chamber.
Further, the toner cartridge of the method for the present invention processing, coloration is adjustable, and film compactness is excellent, improve brightness and
Frictional behaviour prolongs the service life.
The present invention includes two sets of two sets of high-power impulse magnetron sputtering system and vacuum cathode arc depositing system.
Wherein, T-type Magnetic filter deposition method are as follows: the carbon ion for generating carbon target sequentially passes through the first flash line packet and T
Type magnetic filter.
Wherein, Magnetic filter systems technology parameter is as follows: a set of impulse line packet, frequency 0-200Hz, electric current 0-50A；A set of suppression
Line packet processed, frequency 0-200Hz, electric current 0-10A；A set of 90 degree of magnetic filters, bend pipe positive bias use pulsed, frequency 20-
100Hz, voltage 10-30V；Bend pipe magnetic field uses three pieces of line packets, adjacent with anode canister for flash line packet, frequency 20-
80Hz, electric current 0-20A；Medium line packet is AC line packet 0-5A, and connecting with vacuum chamber is high impulse focal line packet, and electric current is
30-200A, frequency 30-300Hz.
It is as shown in Figure 2: FCVA be vacuum cathode arc depositing system, HIPIMS be high-power impulse magnetron sputtering system, two
Person is provided with cooling system.Sample is located in vacuum chamber, can carry out rotation and revolution motion.Pass through rationally setting for each section
Meter, can make two parts work independently, also work together in combination with two parts.The two ion beam is distributed in angle, angle 30-90
Degree, utilizes plasma phase interaction caused by the pulse of HIPIMS technology low duty ratio and peak power density and FCVA
With film that can be more excellent with processability.In the case where guaranteeing film quality, design size is reduced as far as possible, is subtracted
Small space, reduces cost.By the optimization of device line cabling, whole design is advanced optimized.
The present invention is lower in operating temperature, is suitable for various substrates, the plasma density of extraction is higher, film layer compactness
Good, binding force is good, by combining high-power impulse magnetron sputtering with vacuum cathode arc depositing system, changes plasma
The Potential Distributing in section improves plasma density, solves the problems, such as that HIPIMS deposition rate is low to a certain extent, have simultaneously
Effect improves film base interface bonding state, and the compactness of film layer is good, and the film color of preparation is adjustable according to thin film composition, deposition
Rate increases, and service performance is excellent, can improve interface performance, improves the tribological property of film.
The foregoing is merely this patent preferred embodiments, not limit this patent range, all using specification and attached
Equivalent structure or equivalent flow shift made by figure content is directly or indirectly used in other relevant technical fields, belongs to
The scope of this patent.
Claims (9)
1. a kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology, it is characterised in that: including matrix, and mutually
Vacuum system, high-power impulse magnetron sputtering system, vacuum cathode arc depositing system and the control system of connection, described matrix are logical
It crosses the high-power impulse magnetron sputtering system and is prepared into toner cartridge in conjunction with the vacuum cathode arc depositing system；
The toner cartridge preparation method of the combination high-power impulse magnetron sputtering technology, method and step are as follows:
S01. high and low energy is carried out to described matrix surface using heavy metal and gas hybrid plasma alternately to clean；
S02. secondary cleaning is carried out to described matrix using high-power impulse magnetron sputtering system (HIPIMS)；
S03. the vacuum cathode arc depositing system (FCVA) is using carbon target as cathode, using double 90 degree of Magnetic filter deposition methods in institute
State the deposition that high-densit DLC coating is carried out on matrix；
S04. the amorphous increasing to form 1-3nm is etched to DLC coating progress nanostructure using anode layer gas ion source
Saturating and wearing layer；
S05. the high-power impulse magnetron sputtering system and/or the vacuum cathode arc depositing system are separately or concurrently sunk
Product, the two ion beam are distributed in angle, are prepared into toner cartridge.
2. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as described in claim 1, it is characterised in that: institute
The carbon ion for stating carbon target generation sequentially passes through the first flash line packet and T-type magnetic filter, is T-type Magnetic filter deposition method.
3. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as claimed in claim 2, it is characterised in that: institute
0~200Hz of frequency of the first flash line packet is stated, electric current is 0~50A.
4. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as claimed in claim 2, it is characterised in that: institute
T-type magnetic filter positive bias is stated using pulsed, frequency 20-100Hz, voltage 10-30V.
5. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as claimed in claim 2, it is characterised in that: institute
The magnetic field for stating bend pipe uses three pieces of line packets, adjacent with anode canister for flash line packet, frequency 20-80Hz, electric current 0-
20A, medium line packet are AC line packet 0-5A.
6. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as described in claim 1, it is characterised in that: institute
Stating vacuum chamber to connect is high impulse focal line packet, electric current 30-200A, frequency 30-300Hz.
7. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as described in claim 1, it is characterised in that: institute
The angle for stating the angle of the ion beam of high-power impulse magnetron sputtering system and the vacuum cathode arc depositing system is 30~90
Degree.
8. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as described in claim 1, it is characterised in that: institute
It states vacuum cathode arc depositing system (FCVA) and the high-power impulse magnetron sputtering system (HIPIMS) is provided with cooling system.
9. combining the toner cartridge preparation method of high-power impulse magnetron sputtering technology as described in claim 1, it is characterised in that: institute
The sample for stating matrix is located in vacuum chamber.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910156618.XA CN109735818A (en) | 2019-03-01 | 2019-03-01 | A kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910156618.XA CN109735818A (en) | 2019-03-01 | 2019-03-01 | A kind of toner cartridge preparation method of combination high-power impulse magnetron sputtering technology |
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| CN109735818A true CN109735818A (en) | 2019-05-10 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111560592A (en) * | 2020-06-16 | 2020-08-21 | 中国科学院宁波材料技术与工程研究所 | Long-acting wear-resistant antifogging lens coating and preparation method and application thereof |
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| JPH04182658A (en) * | 1990-11-17 | 1992-06-30 | Seiko Epson Corp | Photosensitive drum |
| CN101663623A (en) * | 2007-04-27 | 2010-03-03 | 佳能株式会社 | Developing roller, developing device, process cartridge, and electrophotographic imaging apparatus |
| US20150129421A1 (en) * | 2013-11-13 | 2015-05-14 | Mingdao University | Hybrid deposition system |
| CN105629684A (en) * | 2014-10-31 | 2016-06-01 | 朱振新 | Wear-resisting photosensitive drum |
| CN108359942A (en) * | 2018-03-28 | 2018-08-03 | 北京师范大学 | A kind of preparation method of wear-resistant diamond-like coating |
| CN109097735A (en) * | 2018-08-31 | 2018-12-28 | 北京师范大学 | A kind of preparation method of the diamond-like coating of the moisture-proof high grade of transparency |
-
2019
- 2019-03-01 CN CN201910156618.XA patent/CN109735818A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04182658A (en) * | 1990-11-17 | 1992-06-30 | Seiko Epson Corp | Photosensitive drum |
| CN101663623A (en) * | 2007-04-27 | 2010-03-03 | 佳能株式会社 | Developing roller, developing device, process cartridge, and electrophotographic imaging apparatus |
| US20150129421A1 (en) * | 2013-11-13 | 2015-05-14 | Mingdao University | Hybrid deposition system |
| CN105629684A (en) * | 2014-10-31 | 2016-06-01 | 朱振新 | Wear-resisting photosensitive drum |
| CN108359942A (en) * | 2018-03-28 | 2018-08-03 | 北京师范大学 | A kind of preparation method of wear-resistant diamond-like coating |
| CN109097735A (en) * | 2018-08-31 | 2018-12-28 | 北京师范大学 | A kind of preparation method of the diamond-like coating of the moisture-proof high grade of transparency |
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| Title |
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| 李春伟等: ""复合高功率脉冲磁控溅射技术的研究进展"" * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111560592A (en) * | 2020-06-16 | 2020-08-21 | 中国科学院宁波材料技术与工程研究所 | Long-acting wear-resistant antifogging lens coating and preparation method and application thereof |
| CN111560592B (en) * | 2020-06-16 | 2022-03-08 | 中国科学院宁波材料技术与工程研究所 | Long-acting wear-resistant antifogging lens coating and preparation method and application thereof |
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Effective date of registration: 20211201 Address after: 301-303, 3 / F, building a, Tengfei Industrial Building, 6 Taohua Road, Fubao community, Fubao street, Futian District, Shenzhen, Guangdong 518000 Applicant after: Shenzhen Dell Monde Technology Co.,Ltd. Address before: 518000 Room 601, building 3, Yinxing Zhijie (shenguodian building), No. 1301-76, sightseeing Road, Xinlan community, Guanlan street, Longhua District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN NANKE SUPER MEMBRANE MATERIAL TECHNOLOGY Co.,Ltd. |
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Application publication date: 20190510 |