CN109725576A - A kind of SiC power device control method and device device - Google Patents
A kind of SiC power device control method and device device Download PDFInfo
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- CN109725576A CN109725576A CN201811615222.9A CN201811615222A CN109725576A CN 109725576 A CN109725576 A CN 109725576A CN 201811615222 A CN201811615222 A CN 201811615222A CN 109725576 A CN109725576 A CN 109725576A
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Abstract
The present invention provides a kind of SiC power device control method and device, and wherein method includes: that analog signal sampling module samples the operating voltage and electric current of SiC power device, and collected sampled signal is sent to fault processing module and MCU module；Fault processing module receives sampled signal, and sampled signal is compared with setting value, obtains comparison result, comparison result is sent to MCU module；MCU module pre-processes sampled signal, obtains sampling true value, and will sample true value and calculate by the quick control algolithm of digital accelerator, obtains calculated result, generates PWM wave according to calculated result, and export PWM wave；And MCU module receives comparison result, carries out troubleshooting according to comparison result.The hardware circuit of use is simple, and analog sampling is accurate, and system is reliable and stable, and communication timeliness is strong, and control relevant device dynamic property is good, convenient for SiC power device safety, accurate, stable control.
Description
Technical field
The present invention relates to power electronics new material device controller field more particularly to a kind of SiC power device controlling parties
Method and device.
Background technique
Energy and environmental problem was increasingly prominent in recent years, and energy conservation and environmental protection and low carbon development are increasingly becoming global common recognition.Drop
Low energy consumption promotes the important measure that energy use efficiency is countries in the world today energy-saving and emission-reduction.SiC power device is the third generation half
Conductor, more traditional Si device have broad stopband, the features such as critical electric field breakdown strength height and thermal conductivity height.New material SiC
Power device blocking voltage is high, on state resistance is low, switching loss is small and high temperature resistant works, and the power consumption of system can be greatly lowered,
The volume of reduction system.
Therefore, using novel SiC power device can make the power of power electronic system, temperature, frequency, radiation-curable ability,
Efficiency and reliability multiplication, brings the substantially attenuating of volume, weight and cost, therefore, designs one kind to novel SiC power device
Special efficient controller be there is an urgent need to.
Summary of the invention
The present invention is intended to provide a kind of a kind of SiC power for overcoming the above problem or at least being partially solved the above problem
Device control method and device.
In order to achieve the above objectives, technical solution of the present invention is specifically achieved in that
One aspect of the present invention provides a kind of SiC power device control method, comprising: analog signal sampling module pair
The operating voltage and electric current of SiC power device are sampled, and collected sampled signal is sent to fault processing module and MCU
Module；Fault processing module receives sampled signal, and sampled signal is compared with setting value, obtains comparison result, will compare
Relatively result is sent to MCU module；MCU module receives sampled signal, pre-processes to sampled signal, obtains sampling true value,
And true value will be sampled and calculated by the quick control algolithm of digital accelerator, calculated result is obtained, according to calculated result
PWM wave is generated, and exports PWM wave；And comparison result is received, troubleshooting is carried out according to comparison result.
Wherein, output PWM wave includes: that PWM wave is sent to PWM wave buffer module by MCU module；PWM wave buffer module is slow
PWM wave is deposited, and exports PWM wave.
Wherein, method further include: CAN communication module obtains user demand information, and user demand information is transmitted to MCU
Module；MCU module receives user demand information, and generates feedback information according to user demand information, extremely by transmission of feedback information
CAN communication module；CAN communication module exports feedback information.
Wherein, sampled signal is compared by fault processing module with setting value, obtains comparison result, comparison result is sent out
Sending to MCU module includes: fault processing module when judging that sampled signal is greater than the set value, and generates fault-signal, failure is believed
Number it is sent to MCU module.
Wherein, it includes: fault processing module according to default preferential that fault-signal is sent to MCU module by fault processing module
Fault-signal is sent to MCU module by grade；MCU module receives comparison result, carries out troubleshooting processing packet according to comparison result
Include: MCU module carries out corresponding failure processing according to the priority of fault-signal.
Another aspect of the present invention provides a kind of SiC power device control device, comprising: analog signal sampling module is used
In to SiC power device operating voltage and electric current sample, collected sampled signal is sent to fault processing module
And MCU module；Fault processing module is compared with setting value for receiving sampled signal, and by sampled signal, is compared
As a result, comparison result is sent to MCU module；MCU module pre-processes sampled signal for receiving sampled signal, obtains
To sampling true value, and true value will be sampled and calculated by the quick control algolithm of digital accelerator, obtains calculated result,
PWM wave is generated according to calculated result, and exports PWM wave；And comparison result is received, troubleshooting is carried out according to comparison result.
Wherein, device further include: PWM wave buffer module；MCU module is also used to for PWM wave being sent to PWM wave buffering mould
Block；PWM wave buffer module for caching PWM wave, and exports PWM wave.
Wherein, device further include: CAN communication module；CAN communication module, for obtaining user demand information, and by user
Demand information is transmitted to MCU module；MCU module is also used to receive user demand information, and is generated instead according to user demand information
Feedforward information, by transmission of feedback information to CAN communication module；CAN communication module is also used to export feedback information.
Wherein, fault processing module will specifically for generating fault-signal when judging that sampled signal is greater than the set value
Fault-signal is sent to MCU module.
Wherein, fault processing module, specifically for fault-signal is sent to MCU module according to pre-set priority；MCU mould
Block, specifically for carrying out corresponding failure processing according to the priority of fault-signal.
It can be seen that the SiC power device control method and device provided through the invention, the hardware circuit letter of use
Single, analog sampling is accurate, and system is reliable and stable, and communication timeliness is strong, and control relevant device dynamic property is good, is convenient for SiC function
Rate device safety, accurate, stable control.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is the structural schematic diagram of SiC power device control device provided in an embodiment of the present invention；
Fig. 2 is the switch for analyzing SiC power device in SiC power device control device provided in an embodiment of the present invention in advance
The schematic diagram of characteristic and dynamic property；
Fig. 3 is the flow chart of SiC power device control method provided in an embodiment of the present invention.
Specific embodiment
Exemplary embodiments of the present disclosure are described in more detail below with reference to accompanying drawings.Although showing the disclosure in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
It is limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
It is fully disclosed to those skilled in the art.
The present invention has devised a kind of control for being exclusively used in SiC power device for SiC power device performance and control feature
Device processed, referring to Fig. 1, specific hardware design is included at least: analog signal sampling module, MCU module and fault processing module.
Further, SiC power device controller can also include: PWM wave buffer module and CAN communication module.
Its hardware function can be built into mould with the AD pin of F28035, COMP pin respectively by LMV324L respectively
Quasi- signal sampling module and fault-signal processing module, are built into PWM wave buffer module by SN74LVC4245A, by ISO1050
Build CAN communication module.Its connectivity port is divided into analog signal port, digital signal port and communication signal port, respectively
Analog signal and digital signal are separated, digital controlled signal and digital communication signal are separated, is reduced between inhomogeneity signal
Interference, lifting system reliability.
Wherein, the operation of each functional module is as follows in SiC power device control device provided in an embodiment of the present invention:
Analog signal sampling module, for SiC power device operating voltage and electric current sample, will be collected
Sampled signal is sent to fault processing module and MCU module；
Fault processing module is compared for receiving sampled signal, and by sampled signal with setting value, and knot is compared in acquisition
Comparison result is sent to MCU module by fruit；
MCU module pre-processes sampled signal for receiving sampled signal, obtains sampling true value, and will sampling
True value is calculated by the quick control algolithm of digital accelerator, obtains calculated result, generates PWM according to calculated result
Wave, and export PWM wave；And comparison result is received, troubleshooting is carried out according to comparison result.
In the case where including PWM wave buffer module in SiC power device control device provided in an embodiment of the present invention,
MCU module is also used to for PWM wave to be sent to PWM wave buffer module；PWM wave buffer module for caching PWM wave, and exports
PWM wave.
In the case that SiC power device control device provided in an embodiment of the present invention includes CAN communication module, CAN communication
Module is transmitted to MCU module for obtaining user demand information, and by user demand information；MCU module is also used to receive use
Family demand information, and feedback information is generated according to user demand information, by transmission of feedback information to CAN communication module；CAN communication
Module is also used to export feedback information.
Wherein, fault processing module will specifically for generating fault-signal when judging that sampled signal is greater than the set value
Fault-signal is sent to MCU module.Further, fault processing module, specifically for sending out fault-signal according to pre-set priority
Give MCU module；MCU module, specifically for carrying out corresponding failure processing according to the priority of fault-signal.
At the beginning of carrying out setting of the present invention, as an optional embodiment of the embodiment of the present invention, the embodiment of the present invention
The SiC power device control method of offer further include: by the dipulse experiment of SiC power device, analyze SiC power device
Switching characteristic and dynamic property evaluate the technical parameter of SiC power device, and wherein technical parameter includes but is not limited to switch damage
Consumption, trouble free service frequency field, temperature rise situation etc..It is possible thereby to provide theoretical foundation for controller and driving circuit design.Its
Schematic diagram is as shown in Figure 2.Firstly, keeping SiC power tube (MOSFET) grid voltage constant, SiC power tube is connected, adjusts electricity
Source constant current output calculates on-state loss by measured power pipe grid source the two poles of the earth voltage, analyzes switching loss；Secondly, being abundant
The switching characteristic of measured power device, to the switching characteristic under the conditions of different input voltages and different driving resistance combination respectively into
Row test, analyzes switching characteristic.
Gone out by dipulse experiment interpretation of result: SiC power device has taken into account the quiet of low on-resistance and high blocking voltage
State performance advantage；Compared with Same Efficieney grade Si power device, SiC power device grid is produced by Miller capacitance under same working frequency
Raw coupled interference influence is smaller, and switching speed is fast, and switching loss is small.
Based on SiC power device controller shown in FIG. 1, Fig. 3 shows SiC power device provided in an embodiment of the present invention
The flow chart of control method, referring to Fig. 3, SiC power device control method provided in an embodiment of the present invention, comprising:
S301, analog signal sampling module sample the operating voltage and electric current of SiC power device, will be collected
Sampled signal is sent to fault processing module and MCU module.
Specifically, analog signal sampling module can be taken by non-essential resistance and current transformer is to SiC power device
Operating voltage and electric current carry out decaying re-sampling, will be sent to fault processing module and MCU module using signal later.
Collection of simulant signal module may include multichannel analog signals acquisition tasks, respectively to the work of SiC power device
Voltage and current is sampled, and the working environment of SiC device is monitored, and digital quantity needed for acquiring corresponding topology control, is accurate
It controls the work of SiC power device and data support is provided.
S302, fault processing module receives sampled signal, and sampled signal is compared with setting value, and knot is compared in acquisition
Comparison result is sent to MCU module by fruit.
Specifically, after fault processing module receives the sampled signal that analog signal sampling module samples, Ke Yitong
Crossing the analog comparator that LMV324L amplifier follower is input to inside MCU module, (setting value is preset with setting value
Protection value) voltage be compared, generate comparison result.
As an optional embodiment of the embodiment of the present invention, comparison result may include fault-signal and normal letter
Number.Sampled signal is compared by fault processing module with setting value, obtains comparison result, comparison result is sent to MCU mould
Block includes: fault processing module when judging that sampled signal is greater than the set value, and generates fault-signal, fault-signal is sent to
MCU module.And fault processing module generates normal signal when judging sampled signal no more than setting value, and normal signal is sent out
Give MCU module.Further, as an optional embodiment of the embodiment of the present invention, fault processing module is by fault-signal
Being sent to MCU module includes: that fault-signal according to pre-set priority is sent to MCU module by fault processing module；MCU module connects
Comparison result is received, carrying out troubleshooting processing according to comparison result includes: MCU module according to the priority of fault-signal progress phase
Answer troubleshooting.Specifically, if fault-signal, the division of priority can also be carried out to fault-signal, highest priority
The function that fault-signal can make MCU module that PWM wave be forbidden to send out wave, the output of stop pulse signal, pause complete machine work.Thus lead to
It crosses fault processing module quickly to protect, the safe and stable operation of SiC power device can be made.
When specific implementation, analog sampling signal is accessed using fault processing module, follows circuit to connect by LMV324L amplifier
It is connected on the COMP pin of F28035, real-time perfoming is compared with inner setting value, if exceeding setting value, quickly generates failure letter
Number, different faults processing is carried out according to failure priority, ensures the safe and stable operation of SiC power device.
The collected sampled signal of analog signal sampling module is connected to fault-signal processing module as a result, by event
Hinder signal processing module real-time perfoming compared with setting value, super setting value generates fault-signal, and fault-signal is according to preferential fraction
Supplementary biography is defeated by different function module inside MCU module and carries out troubleshooting, such as High Fault signal directly enables PWM wave
The prohibiting function of module, forbids PWM wave to export, and arrestment work reaches quickly protection SiC power device purpose.
S303, MCU module receive sampled signal, pre-process to sampled signal, obtain sampling true value, and will sampling
True value is calculated by the quick control algolithm of digital accelerator, obtains calculated result, generates PWM according to calculated result
Wave, and export PWM wave；And comparison result is received, troubleshooting is carried out according to comparison result.
Specifically, the pretreatment that MCU module carries out sampled signal can include but is not limited to: filter out interference burr signal
Deng operation, accurate following sampling signal.After MCU module receives analog sampling signal, software filtering, filter can be carried out to the signal
Unnecessary burr and interference are removed, true value is accurately sampled.Then, these data pass through the CLA number accelerator of F28035
Quick control algolithm calculate, directly control PWM hair wave frequency and duty ratio, achieve the purpose that quickly to control, and adapt to
The demand of the high working frequency of SiC power device.
When specific implementation, MCU module can use the DSP28035 single-chip microcontroller of TI, have I/O pin, communication pin, AD
Sample pin, the functional pins such as PWM pin, inside has 32 floating number accelerator CLA, aim at independently of
TMS320C28X CPE Core Operational and design, to share complicated High-speed Control algorithm.Specifically, it is directed to SiC power device
The control algolithm of part has the characteristics that high-speed figure operation and high speed logic processing, using F28035 as master chip, in conjunction with it
Control accelerator (CLA) functionality advantage being internally integrated assists main core MCU high speed to complete systematic control algorithm and strategy.It utilizes
Task triggering speed is unloaded from MCU than faster SiC power device control algolithm and is come out by F28035 included CLA function,
Corresponding sampled operational and logic control are responsible for by CLA, discharge MCU, accelerating algorithm operation and logical process, lifting system control
Rate and stability.
Since different SiC power devices has different topology, and different topology corresponds to different control algolithm and control
Strategy, regardless of the full-bridge LLC resonance topological or Vienna rectification topology of application SiC power device, in order to show new material
SiC power device advantage will rely on high-frequency work characteristic, carry out high-speed computation and logical process.In view of SiC power device
Part high-frequency work characteristic, the control algolithm of SiC power device should have the characteristics that high-speed figure operation and Fast Logical processing, this
MCU module in invention uses the MCU with independent digit accelerator, can be competent at the control of the complexity such as PWM, PFM in topology
Algorithm and control strategy handle task.
As an optional embodiment of the embodiment of the present invention, exporting PWM wave includes: that PWM wave is sent to by MCU module
PWM wave buffer module；PWM wave buffer module caches PWM wave, and exports PWM wave.Specifically, it is based on SiC power device high frequency work
Make characteristic, the PWM wave of MCU module output is buffered by PWM wave buffer module so that the signal of output have frequency height,
The characteristics such as dead zone protection, being capable of high efficiency drive and the operation of safeguard protection SiC power device.When specific implementation, PWM wave buffer module
It is connected with the driving of SiC power device, primarily serves MCU output PWM wave buffering, enhance load capacity, and can quickly protect
Etc. functions, effectively enhance the stability of control system.
As an optional embodiment of the embodiment of the present invention, SiC power device control provided in an embodiment of the present invention
Method further include: CAN communication module obtains user demand information, and user demand information is transmitted to MCU module；MCU module
User demand information is received, and feedback information is generated according to user demand information, by transmission of feedback information to CAN communication module；
CAN communication module exports feedback information.Specifically, CAN communication module is connected with host computer or controller, MCU mould
Block is realized by the module establishes interactive relation with user, and MCU module obtains user demand information, and user obtains equipment work ginseng
Several and work state information carries out real-time communication.Wherein CAN module communication has been compatible with charging pile application system protocol requirement, when
Effect property is high, does not lose message information.It is possible thereby to carry out SiC power device with host computer or controller in real time by CAN communication module
Part operational data and status information are communicated.
As an optional embodiment of the embodiment of the present invention, MCU module is realized respective except connecting with each functional module
Outside function, it can also mainly realize control strategy of the SiC power device applications into different topology, complete machine is made to reach dynamic property
Well, the features such as control precision is high, system stability is strong.Further, MCU module may be developed that some I/O functions, for real
The controls such as existing running indicator, malfunction indicator lamp.
It can be seen that the SiC power device control method provided through the embodiment of the present invention, takes full advantage of SiC and partly leads
The features such as body forbidden bandwidth height, critical electric field breakdown strength height and thermal conductivity height, can adapt to high temperature, high-frequency and high-pressure work
Under the conditions of, the power electronic devices blocking voltage for playing SiC power device is high, and on state resistance is low, switching loss is small and high temperature resistant
The advantages such as work can substantially reduce the power consumption of equipment, reduce the volume of equipment.Further, circuit hardware is simple, analog sampling
Accurate data filters out unnecessary interference signal, and signal timeliness is strong, effective, accurate convenient for equipment and stable entirely without lag
Control.
In addition, MCU module exports PWM wave according to control algolithm calculated result and control strategy demand, buffered by PWM wave
Module enhances driving capability, SiC power device driving signal can be made stable, accurate, lifting system stability.MCU module root
Summation device demand for control is needed to adjust PWM wave output according to by the way that CAN communication module acquisition user is given, to control the defeated of equipment
Out, stable operation is kept.
In conclusion the SiC power device control method provided through the embodiment of the present invention, it can be based on to SiC power
The professional analysis and test of device enables SiC power device controller using high-speed figure control logic, and fully considers SiC function
The performance characteristics of rate device have and sample accurate, power device control signal PWM wave frequency height, control algolithm processing speed
Fastly, quickly protection and the advantages such as real-time communication.The controller combination SiC power device characteristic, suitable services high frequency, high temperature and
High-power electric and electronic application field has very big application advantage and market potential.
It should be understood by those skilled in the art that, embodiments herein can provide as method, system or computer program
Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the application
Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the application, which can be used in one or more,
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces
The form of product.
The application is referring to method, the process of equipment (system) and computer program product according to the embodiment of the present application
Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions
The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs
Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce
A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real
The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
These computer program instructions, which may also be stored in, is able to guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works, so that it includes referring to that instruction stored in the computer readable memory, which generates,
Enable the manufacture of device, the command device realize in one box of one or more flows of the flowchart and/or block diagram or
The function of being specified in multiple boxes.
These computer program instructions also can be loaded onto a computer or other programmable data processing device, so that counting
Series of operation steps are executed on calculation machine or other programmable devices to generate computer implemented processing, thus in computer or
The instruction executed on other programmable devices is provided for realizing in one or more flows of the flowchart and/or block diagram one
The step of function of being specified in a box or multiple boxes.
In a typical configuration, calculating equipment includes one or more processors (CPU), input/output interface, net
Network interface and memory.
Memory may include the non-volatile memory in computer-readable medium, random access memory (RAM) and/
Or the forms such as Nonvolatile memory, such as read-only memory (ROM) or flash memory (flash RAM).Memory is computer-readable Jie
The example of matter.
Computer-readable medium includes permanent and non-permanent, removable and non-removable media can be by any method
Or technology come realize information store.Information can be computer readable instructions, data structure, the module of program or other data.
The example of the storage medium of computer includes, but are not limited to phase change memory (PRAM), static random access memory (SRAM), moves
State random access memory (DRAM), other kinds of random access memory (RAM), read-only memory (ROM), electric erasable
Programmable read only memory (EEPROM), flash memory or other memory techniques, read-only disc read only memory (CD-ROM) (CD-ROM),
Digital versatile disc (DVD) or other optical storage, magnetic cassettes, tape magnetic disk storage or other magnetic storage devices
Or any other non-transmission medium, can be used for storage can be accessed by a computing device information.As defined in this article, it calculates
Machine readable medium does not include temporary computer readable media (transitory media), such as the data-signal and carrier wave of modulation.
The above is only embodiments herein, are not intended to limit this application.To those skilled in the art,
Various changes and changes are possible in this application.It is all within the spirit and principles of the present application made by any modification, equivalent replacement,
Improve etc., it should be included within the scope of the claims of this application.
Claims (10)
1. a kind of SiC power device control method characterized by comprising
Analog signal sampling module samples the operating voltage and electric current of SiC power device, by collected sampled signal
It is sent to fault processing module and MCU module；
The fault processing module receives the sampled signal, and the sampled signal is compared with setting value, obtains ratio
Compared with as a result, the comparison result is sent to the MCU module；
The MCU module receives the sampled signal, pre-processes to the sampled signal, obtains sampling true value, and will
The sampling true value is calculated by the quick control algolithm of digital accelerator, calculated result is obtained, according to the calculating
As a result PWM wave is generated, and exports the PWM wave；And the comparison result is received, it is carried out at failure according to the comparison result
Reason.
2. the method according to claim 1, wherein the output PWM wave includes:
The PWM wave is sent to PWM wave buffer module by the MCU module；
The PWM wave buffer module caches the PWM wave, and exports the PWM wave.
3. the method according to claim 1, wherein further include:
CAN communication module obtains user demand information, and the user demand information is transmitted to the MCU module；
The MCU module receives the user demand information, and generates feedback information according to the user demand information, will be described
Transmission of feedback information is to the CAN communication module；
The CAN communication module exports the feedback information.
4. the method according to claim 1, wherein the fault processing module is by the sampled signal and sets
Value is compared, and obtains comparison result, the comparison result, which is sent to the MCU module, includes:
The fault processing module generates fault-signal when judging that the sampled signal is greater than the setting value, will the event
Barrier signal is sent to the MCU module.
5. according to the method described in claim 4, it is characterized in that, the fault-signal is sent to by the fault processing module
The MCU module includes:
The fault-signal is sent to the MCU module according to pre-set priority by the fault processing module；
The MCU module receives the comparison result, carries out troubleshooting processing according to the comparison result and includes:
The MCU module carries out corresponding failure processing according to the priority of the fault-signal.
6. a kind of SiC power device control device characterized by comprising
Analog signal sampling module, for SiC power device operating voltage and electric current sample, by collected sampling
Signal is sent to fault processing module and MCU module；
The fault processing module is compared with setting value for receiving the sampled signal, and by the sampled signal, obtains
Comparison result is obtained, the comparison result is sent to the MCU module；
The MCU module pre-processes the sampled signal for receiving the sampled signal, obtains sampling true value,
And calculate the sampling true value by the quick control algolithm of digital accelerator, calculated result is obtained, according to described
Calculated result generates PWM wave, and exports the PWM wave；And the comparison result is received, event is carried out according to the comparison result
Barrier processing.
7. device according to claim 6, which is characterized in that further include: PWM wave buffer module；
The MCU module is also used to for the PWM wave to be sent to the PWM wave buffer module；
The PWM wave buffer module for caching the PWM wave, and exports the PWM wave.
8. device according to claim 6, which is characterized in that further include: CAN communication module；
The CAN communication module is transmitted to the MCU mould for obtaining user demand information, and by the user demand information
Block；
The MCU module is also used to receive the user demand information, and generates feedback letter according to the user demand information
Breath, by the transmission of feedback information to the CAN communication module；
The CAN communication module is also used to export the feedback information.
9. device according to claim 6, which is characterized in that
The fault processing module is specifically used for generating fault-signal when judging that the sampled signal is greater than the setting value,
The fault-signal is sent to the MCU module.
10. device according to claim 9, which is characterized in that
The fault processing module, specifically for the fault-signal is sent to the MCU module according to pre-set priority；
The MCU module, specifically for carrying out corresponding failure processing according to the priority of the fault-signal.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112653094A (en) * | 2019-10-11 | 2021-04-13 | 珠海零边界集成电路有限公司 | Overcurrent protection device, method and equipment |
| CN116545233A (en) * | 2023-07-06 | 2023-08-04 | 如果新能源科技(江苏)股份有限公司 | Controller for generating PWM signal, power conversion device and power supply system |
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| CN116545233B (en) * | 2023-07-06 | 2023-09-15 | 如果新能源科技(江苏)股份有限公司 | Controller for generating PWM signal, power conversion device and power supply system |
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