CN109721023A - A kind of flexible sensor array, palaption probe and preparation method thereof - Google Patents
A kind of flexible sensor array, palaption probe and preparation method thereof Download PDFInfo
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Abstract
The invention proposes a kind of sensor cover battle arrays and preparation method thereof based on flexible insulating material isolation, especially by after wafer level prepares completion sensor array, the deep trench of the sensor array is isolated by etching, and the embedding flexible insulating material in deep trench, sensor array after cutting, since flexible insulating material has flexibility as interval, can be bent, so as to prepare curved surface palaption probe or spherical surface palaption probe.
Description
[technical field]
The invention belongs to medical instrument field more particularly to a kind of palaption probes based on flexible sensor Array Construction
And its implementation.
[background technique]
Chinese breast cancer has high disease incidence speedup, death rate height, treatment difficulty height, the trend of age of onset morning, but compares
Other tumours, it is more preferable that the early diagnosis of breast cancer early controls effect, as carcinoma in situ nearly 100% can cure.The main inspection method of breast cancer, which has, faces
Bed palpation, mammography, ultrasound, nuclear-magnetism, fiberoptic ductoscopy etc., these methods have some limitations.Skill is imaged in mammary gland palpation
Art is suggested the nineties in last century, and corresponding medical device product emerged in 2003, and this product has sensitivity
High, easy to operate, result interpretation is easy and fully belongs to noninvasive feature.Therefore, the imaging of mammary gland palpation is that one kind has very much
The technology of market prospects and social value.
The quality of palaption probe is the key that the imaging of mammary gland palpation, is popped one's head in by several pressure sensor groups in length and breadth
At array, pressure testing is popped one's head in after breast surface, and the pressure sensor in array can be due to the elasticity modulus that it corresponds to tissue be different
Different pressure signals is exported, instrument calculates pressure signal, obtains the information such as the hardness, size, shape of lump, auxiliary
Help clinical diagnosis.
Traditional array of pressure sensors structure is mainly made of upper bottom crown and elastic silica gel therein, the silicon
Glue is the insulation dielectric of capacitor, makes sensor make the corresponding of pole span variation to external force using the resilient nature of silica gel, leads
Appearance is sent a telegraph to change.This mode has following deficiency: because the reason of manufacture craft, the one of different sensors in array
Cause property it is poor, to temperature more sensitivity, cannot spring back or spring back for a long time deficiency using rear silica gel.
By the research to the prior art, it is found that the silicone base capacitance sensor based on MEMS technology can solve above-mentioned ask
Topic.By retrieval find, had in the prior art much the silicone base capacitance sensor array based on MEMS technology it is relevant
Technical solution discloses, but for how using MEMS array production curved surface probe, how to solve the problems, such as the encapsulation under the scene then
Public information is less.The elementary tactics of above scheme is all: production sensor linear array first is then based on to the reasonable of linear array
Encapsulation makes curved surface sensor array, these resolving ideas are relatively easy easy, but there is also following deficiencies: between linear array
Gap how to fill and lead up to guarantee that the end face entirely popped one's head in is smooth and be one and be difficult to solve the problems, such as, another aspect linear array is independent
It is bonded on flexible board also it is difficult to ensure that bonding height is completely the same, the difficulty of probe tip face flatness will be further increased in this；
And one by one on the one hand bonding linear array reduces production efficiency, on the other hand can also reduce reliability.
It is necessary to study the curved surface palaption probes for how more efficiently preparing high reliability as a result,.
[summary of the invention]
To solve the above-mentioned problems, the present invention proposes a kind of curved surface palaption probe and its system based on MEMS disk technique
Preparation Method, specific technical solution are as follows:
A kind of preparation method of flexible sensor array, which comprises the following steps:
The first silicon wafer is selected, includes silicon dioxide layer on the first surface of first silicon wafer；
The silicon dioxide layer is etched, array of cavities is formed；
The gap of the array of cavities is etched, the deep trench intersected in length and breadth is formed, the depth of the deep trench is more than described
The thickness of silicon dioxide layer；
Elastic insulating material is filled in the deep trench；
Soi wafer is selected, the soi wafer includes upper silicon wafer, insulating layer, lower silicon slice, by the lower silicon of the soi wafer
Piece surface is bonded with the first surface of first silicon wafer；
Remove the upper silicon wafer and insulating layer of the soi wafer；
First electrode figure is made on the lower silicon slice surface of the soi wafer；
According to the lower silicon slice of the patterning soi wafer of the first electrode, the patterned lower silicon slice has
With first electrode figure having the same；
The second surface opposite with first surface of first silicon wafer is thinned, until exposing the elastic insulating material；
Second electrode is prepared on the second surface of first silicon wafer, the second electrode corresponds to the cavity battle array
Column form second electrode array；
It cuts first silicon wafer and obtains sensor array.
The present invention also proposes the preparation method of another flexible sensor array, which comprises the following steps:
The first silicon wafer is selected, includes silicon dioxide layer on the first surface of first silicon wafer；
The silicon dioxide layer is etched, array of cavities is formed；
Soi wafer is selected, the soi wafer includes upper silicon wafer, insulating layer, lower silicon slice, by the lower silicon of the soi wafer
Piece surface is bonded with the first surface of first silicon wafer；
Remove the upper silicon wafer and insulating layer of the soi wafer；
Conductive material layer is deposited on the lower silicon slice surface of the soi wafer；
The lower silicon slice of the soi wafer is etched, the deep trench intersected in length and breadth, cavity described in the deep trench interval are formed
Array, it is first electrode figure that the conductive material layer, which is synchronized etching,；
Elastic insulating material is filled in the deep trench；
The second surface opposite with first surface of first silicon wafer is thinned, until exposing the elastic insulating material；
Second electrode is prepared on the second surface of first silicon wafer, the second electrode corresponds to the cavity battle array
Column form second electrode array；
It cuts first silicon wafer and obtains sensor array.
Preferably, the depth of the cavity is no more than the thickness of the silicon dioxide layer.
Preferably, wherein the elastic insulating material includes PDMS.
Preferably, the depth of the deep trench is more than the sum of the lower silicon slice and the thickness of the silicon dioxide layer.
It preferably, further include covering the elastic insulating material in the conductive material layer surface.
The present invention also proposes a kind of preparation method of curved surface palaption probe, it is characterised in that: the following steps are included:
Flexible sensor array is made, wherein the method that the production flexible sensor array is proposed according to the present invention
Production；
Flexible circuit board is made, is provided with electrode pad on the flexible circuit board；
By the flexible sensor array package to the flexible circuit board, the flexible sensor array and institute are established
State the conductive connection of flexible circuit board；
The flexible circuit board is bonded to curved surface backing；
Surface insulation and shielding processing are carried out to the flexible sensor array.
Preferably, the electrode pad on the flexible circuit board includes first electrode pad array and second electrode pad
Array is conductively connected with the first electrode of the flexible sensor array, second electrode respectively.
Preferably, further include the steps that establishing the electrode pad and acquire the electrical connection of cable.
Preferably, further include the steps that carrying out surfacing processing to the flexible sensor array.
Preferably, further include the steps that connecting with capture card, host.
Preferably, the curved surface palaption probe is spherical surface palaption probe.
The beneficial effects of the present invention are: the invention proposes a kind of sensor cover battle arrays based on flexible insulating material isolation
And preparation method thereof, it, can be with based on preparation method sensor cover battle array obtained due to being isolated through flexible insulating material
Bending, so as to prepare curved surface palaption probe or spherical surface palaption probe.
[Detailed description of the invention]
Fig. 1 is the perspective view of the explosion of sensor array in the embodiment of the present invention；
Fig. 2 is the lower electrode schematic diagram of sensor array in the embodiment of the present invention；
Fig. 3 is the floor map of sensor array in the embodiment of the present invention；
Fig. 4 is flexible circuit board electrode pad schematic diagram in the embodiment of the present invention；
Fig. 5 is mean camber of embodiment of the present invention probe schematic diagram；
Fig. 6 is the flexible sensor preparation method schematic diagram of the embodiment of the present invention 1；
Fig. 7 is the flexible sensor preparation method schematic diagram of the embodiment of the present invention 3.
[specific embodiment]
Below by specific embodiment combination attached drawing 1 to attached drawing 7, invention is further described in detail, so as to energy
The advantages of enough more fully understanding the solution of the present invention and its various aspects.Below in an example, it provides and implements in detail below
The purpose of mode is easy for becoming apparent from thorough explanation to present disclosure, rather than limiting the invention.Wherein
The words of the indicating positions such as upper and lower, left and right be only for shown structure in respective figure for position.
Referring to Fig. 1-5, the present invention proposes that a kind of flexible sensor array element, the sensor array structure include powering on
Pole 1, elastic membrane (silicon) 2, array of cavities 3, the first silicon dioxide layer 4, elastic insulated wall 5, basal layer 7, referring to Fig. 1:
Wherein, the first silicon dioxide layer 4 and the second silicon dioxide layer 6 are same layer material, only the first silica
Layer 4 is located at sensor array element, etched to form array region, can prepare array of cavities 3 on it.
Second silicon dioxide layer 6 is located above basal layer 7, and the second silicon dioxide layer 6 is etched device area,
Array of cavities 3 is formed in one silicon dioxide layer 4, cavity depth is less than silicon dioxide layer thickness, the thickness that silicon dioxide layer has more
Do the insulating layer of capacitive sensor unit in degree part.Elastic insulated wall 5 is located at basal layer 7 and the first silicon dioxide layer 4
In horizontal and vertical slot, on the one hand play the role of insulation, basal layer and silicon dioxide layer on the other hand can be guaranteed around list
One axial direction is bent certain angle.Elastic insulated wall 5 is coplanar with silicon dioxide layer 6 and basal layer 7 respectively, it
Between be closely joined together.Silicon dioxide layer 6 is above elastic mold layer 2, and elastic membrane material is silicon, layers of elastomeric film 2 and two
Silicon oxide layer 6 is fit together by similar techniques such as Direct Bondings, and elastic membrane 2 is strip structure.It is upper above elastic membrane 2
Together with electrode layer 1, upper electrode layer 1 and layers of elastomeric film 2 are fitted closely by techniques such as evaporation, magnetron sputterings, 1 He of top electrode
Elastic membrane 2 is equally strip structure, and elastic membrane 2 and 1 strip structure of top electrode can be formed by patterned etch technique.On
State the column that strip structure constitutes sensor cover battle array, Fig. 1 be shown as three column (make a line good certainly, that is, be illustrated as three rows, four
Column).Each functional unit is made of several cavitys, and following schematic diagram is shown four, each cavity and its it is corresponding on
Electrode zone and lower pole region are built into a capacitive sensor structure unit, several structural units are built into one
One functional unit can be formed in parallel by sensor function unit by several structural units, and the following figure is illustrated as four knots
Structure building unit is a functional unit.
Referring to fig. 2, each functional unit, i.e. array of cavities Unit 3 lower electrode 8 be it is mutually isolated, share 3 rows 4 column
Totally 12 lower electrodes 8.
Sensor array at least arranges totally four sensor function building units by two rows two, it is preferred that 12 rows 16 arrange, it is secondary
5 rows 8 are selected to arrange, the definition of the ranks can exchange, i.e. 16 rows 12 column are still preferred embodiment and are equal to 12 rows 16 column.Each
The preferred 2MM*2MM of the size of functional unit, functional unit, the preferred 8*8 of the number of cavities of each functional unit, i.e. 64 cavitys
Constitute a functional unit chamber portion.Preferably 0.5 micron of cavity depth, preferably 0.8 micron of silicon dioxide layer thickness.Cavity
Preferably 100 microns of diameter.Preferably 2 microns of elastic film thickness, top electrode and preferably 0.1 micron of lower thickness of electrode.
By the sensor face battle array directly production curved surface probe, wherein the pin logic popped one's head in is as follows:
It is interconnected together by the top electrode 9 of every row, the lower electrode 10 of each column links together, and ranks intersection point is face battle array
A pressure transducer functionality unit.It is as shown in Figure 3: to share 64 pressure transducer functionality units.
With the MEMS pressure sensor face matched flexible circuit board of battle array as shown in figure 4, shape on flexible circuit board 11 in Fig. 4
The electrode pad that Cheng Sihang five is arranged, wherein the lower every row of electrode pad 13 connects together.Isolated lower electrode, which passes through, to connect together
Together, conducting resinl directly can be used with lower electrode pad for lower electrode or similar conductive materials are viscous glutinous for the lower interconnection of electrode pad 13
Together.Face battle array inherently interconnects top electrode together and passes sequentially through corresponding top electrode pad 12 and flexible circuit board 11
It connects together.It may make sensor cover battle array with the equidirectional elastic insulated part of top electrode between strip top electrode 12
Very easily it is formed in cambered surface by lining.
Further, it is served as a contrast and is bonded as one with the flexible circuit board 11 of sensor cover battle array good connection and cambered surface, passed
It include sensor function unit 14 and elastic insulated part 15 in the battle array of sensor face.Again respectively by top electrode lead-out wire and lower electricity
Pole lead-out wire and probe cable gradually connect in order, as shown in Fig. 5.Insulating layer is once carried out in sensor cover battle array end face, is shielded
Layer is covered, the palaption probe based on flexible sensor Array Construction can be obtained in the production of levelling blanket.Insulating layer mentioned above,
The conventional techniques of this field can be selected in shielded layer, levelling blanket.
The process that clinic carries out mammary gland palpation imaging inspection is that palaption probe end face daubing coupling agent is pressed on cream again
Room surface slowly presses, and then sliding carries out full milk scanning, to be made whether the primary dcreening operation there are lump.When discovery has lump to deposit
When, need to the lump carry out Image Acquisition.Acquisition mode is, continue slowly to apply pressure to probe until image very
Clearly, it then needs to all directions hunting probe, it is therefore an objective to observe the characteristics such as shape, the mobility of lump from different perspectives.
Current palaption probe often uses the cylindrical structure of single axial cambered surface, which allows operator more conveniently to carry out one
The swing of a specific direction, but can be because probe tip face shape be affected when the swing of other directions.If sound end
Wheat flour is made spherical surface moulding, can solve problem above.But how to make the probe with spherical sensor array end face becomes
This field technical problem urgently to be solved.
Based on the technical program, the problem can solve, flexible sensor face battle array has horizontal and vertical run through entirely
The elastic insulated part of face battle array, its presence may make sensor cover battle array to do bending by a small margin, the present embodiment around any direction
It is in spherical surface flexible circuit board and spherical surface by flexible sensor array flexing by lining.Flexible sensor face battle array in, lower electrode that
This, which is isolated, is mutually not attached to, and top electrode equally isolates each other to be mutually not attached to.There is lower electricity isolated each other on spherical surface flexible circuit board
Pole pad, when making spherical probe, isolated lower electrode successively establishes electrical connection with corresponding lower electrode pad, can be used and leads
The ways customaries such as electric glue are attached；Top electrode mutual connection is together.The spherical probe, which has, shares top electrode, owns
The discrete feature of lower electrode.It is readily conceivable that the production of the devices such as spherical surface ultrasonic probe can be carried out using this scheme.
Embodiment 1
The present invention proposes a kind of preparation method of flexible sensor array, specifically comprises the following steps:
S100: suitable first silicon substrate 16 of selection；The silicon substrate is, for example, 6 cun with a thickness of 500 μm, is passed through
The mode of thermal oxide or deposition forms about 1 μm of a layer thickness or so of silicon dioxide layer 17.It can also directly select with 1 μ
The silicon wafer of m thickness silicon dioxide layer, above-mentioned silicon wafer are attached most importance to doped silicon wafer, conductivity with higher, as shown in Fig. 6 a/6b.
S101: graphical silicon dioxide layer forms the array of cavities 18 that diameter is 50-100 μm, 0.5 μm of depth；Specifically
Ground may include cleaning, front baking, gluing, rear baking, photoetching, development and silica etching, remove photoresist in the patterning process
Etc. techniques, as fig. 6 c.
S102: etching forms the slot of spaced cavities array；In order to which array of cavities is spaced apart, can the array of cavities it
Between etching form the deep trouth 19 of horizontal and vertical arrangement, for example groove width 0.5mm, 250 deep trouth of groove depth are horizontal and vertical two sides
To arrangement, groove width 0.5mm, 250 μm of groove depth.Wet etching or dry etching can be used in the etching of slot, or certain using controlling
The mechanical scribing process of depth is realized, or the modes such as laser for using depth controllable, as shown in fig 6d.
S103: elastic insulating material 20 is filled in above-mentioned slot 19；The elastic insulating material is, for example, elasticity resistant to high temperature
Insulating materials, such as PDMS substance, it can be ensured that elastic insulating material and periphery silicon materials establish good cementation.Filling
When dispenser can be used horizontal and vertical slot is filled, the height of filling should be slightly less than the depth of slot, it is therefore an objective to not shadow
The Si-Si direct bonding in subsequent technique is rung, as shown in fig 6e.
S104: selection soi wafer 21 is simultaneously bonded with the first silicon substrate；The soi wafer 21 covers the first substrate silicon
The face that on piece forms array of cavities carries out Si-Si bonding, as shown in Figure 6 f.
S105:SOI silicon chip back side is thinned；Specifically, the key of SOI silicon wafer 21 after for example being bonded using TMAH solution removal
The silicon layer for closing the opposite back side in surface further removes the buried oxide layer of soi wafer, such as Fig. 6 h such as Fig. 6 g using BOE solution
It is shown.
S106: the soi wafer surface deposition conductive material 22 after being thinned is simultaneously graphical；Such as deposition thickness is 0.1 μm
Metal Al graphical top electrode is formed, as shown in Fig. 6 i/6j further by gluing, photoetching, development and etching technics.
In this step, patterned top electrode can have for strip structure and several array elements and continuously power on
Pole；Top electrode can also be patterned into the discrete pole unit that powers on, i.e., the top electrode of each array element is isolated.
S107: patterned-SOI silicon wafer remainder: the soi wafer after graphical has figure identical with top electrode,
It will be removed without the soi wafer in the region that top electrode retains.Purpose is that soi wafer may when avoiding sensor cover battle array flexing
With elastic insulating material be bent and produce fracture phenomenon and influence face battle array reliability, as shown in Fig. 6 k.
S108: the first silicon substrate is carried out thinned；Reduction processing is done to the first silicon substrate using reduction process, is subtracted
It is reliable for elastic insulating material insulation effect, it is preferable that by the first substrate silicon until being as thin as leaking out elastic insulating material
Piece is thinned to silicon face and is slightly below elastic insulating material part, as shown in Fig. 6 l.
S109: preparing lower electrode, and the lower electrode such as correspondence is covered in array of cavities region, can pass through mask plate
Hollowed out area limits the regional scope of magnetron sputtering, so that isolated lower electrod-array 23 is formed, as shown in Fig. 6 n；Certainly also
It can be initially formed electrode layer, such as Fig. 6 m, it is then graphical again to form lower electrode such as Fig. 6 n.
S110: wafer is cut into face battle array, such as the sensor cover battle array of 4*3 by the cutting of sensor cover battle array, because face battle array is deposited
In the elastic insulating material of strip, so the angle that face battle array can be certain around single axial direction flexing, thus for production curved surface
Probe is prepared.It of courses, if without flexing, so that it may make plane probe.
If powering on pole unit is also the discrete electrodes corresponding to array of cavities, spherical probe can also be prepared.
Embodiment 2
The present invention proposes a kind of preparation method of curved surface probe, after the preparation for completing flexible sensor face battle array, into one
Step the following steps are included:
S111: making flexible circuit board, pad locations and sensor linear array upper/lower electrode pad locations one on circuit board
It causes.
S112: sensor linear array encapsulates, and pad locations smear conducting resinl under flexible circuit board, then by sensor cover battle array
It is placed in corresponding position, so that the lower electrode of sensor cover battle array is established with respective pad on flexible circuit board and stable electrically connected
It connects.After ball can also being planted using sensor pads, the company of sensor linear array and flexible circuit board is carried out by way of Reflow Soldering
It connects.The mode of partial smearing conducting resinl can be used in top electrode and flexible circuit board is attached.
S113: the flexible circuit board of soldered sensor is Nian Jie with curved surface backing, while by upper/lower electrode and acquiring cable
Establish electrical connection.Insulating layer, shielded layer are once carried out in sensor cover battle array end face, the production of levelling blanket can be obtained and be based on
The palaption probe of flexible sensor Array Construction.
S114: palaption probe can be connect with capture card system, host, execute palpation imaging operation.
Embodiment 3:
Shown in Figure 7, the present invention also proposes the preparation method of another flexible sensor array, specifically includes as follows
Step:
S200: suitable first silicon substrate 16 of selection；The silicon substrate is, for example, 6 cun with a thickness of 500 μm, is passed through
The mode of thermal oxide or deposition forms about 1 μm of a layer thickness or so of silicon dioxide layer 17.It can also directly select with 1 μ
The silicon wafer of m thickness silicon dioxide layer, above-mentioned silicon wafer are attached most importance to doped silicon wafer, conductivity with higher, referring to Fig. 7 a/7b.
S201: graphical silicon dioxide layer forms 18 array of cavity that diameter is 50-100 μm, 0.5 μm of depth；Specifically
Ground may include cleaning, front baking, gluing, rear baking, photoetching, development and silica etching, remove photoresist in the patterning process
Etc. techniques, referring to Fig. 7 c.
S203: selection soi wafer 21 is simultaneously bonded with the first silicon substrate 16；The soi wafer 21 covers the first substrate
The face that 18 array of cavity is formed on silicon wafer carries out Si-Si bonding；The soi wafer includes upper silicon wafer, insulating layer, lower silicon slice, by SOI
The lower silicon slice surface of silicon wafer is bonded with the first surface of first silicon wafer 16, referring to Fig. 7 d.
21 thinning back side of S204:SOI silicon wafer；Specifically, the key of soi wafer after for example being bonded using TMAH solution removal
Silicon layer, the i.e. upper silicon wafer for closing the opposite back side in surface, further remove the insulating layer of soi wafer using BOE solution, referring to
Fig. 7 e/7f.
S205: the soi wafer surface after being thinned deposits conductive material 22；Such as the metal that deposition thickness is 0.1 μm
Al, referring to Fig. 7 g.
S206: the slot 19 of spaced cavities array is formed in the SOI lower silicon slice surface etch for foring surface electrode；In order to
Array of cavities is spaced apart, the deep trouth for forming horizontal and vertical arrangement, such as groove width can be etched between the array of cavities
0.5mm, 250 deep trouth of groove depth are horizontal and vertical both direction arrangement, that is, groove width 0.5mm, 250 μm of groove depth.The etching of slot can
It is realized using wet etching or dry etching, or using the mechanical scribing process for controlling certain depth, or controllable using depth
The modes such as laser.
In the present embodiment, by the criss-cross deep trouth between surface top electrode and array of cavities unit according to same
Figure perform etching, therefore form the isolated top electrode corresponding to array of cavities unit.
S207: elastic insulating material 20 is filled in above-mentioned slot；The elastic insulating material is, for example, that elasticity resistant to high temperature is exhausted
Edge material, such as PDMS substance, it can be ensured that elastic insulating material and periphery silicon materials establish good cementation.It can be used
The mode of spraying or spin coating carries out horizontal and vertical slot and is filled, meanwhile, one layer of PDMS layer is also formed in top electrode,
Referring to Fig. 7 i.
S208: carrying out back thinning the first silicon substrate 16, for example, using CMP process the first substrate silicon is done it is thinned
Processing, is thinned to leakage elastic insulating material, and reliable for elastic insulating material insulation effect, thinned target should be silicon face
Slightly below elastic insulated part, referring to Fig. 7 j.
S209: preparing lower electrode 23, and the lower electrode such as correspondence is covered in array of cavities region, can pass through mask plate
Hollowed out area limit the regional scope of magnetron sputtering, so that isolated lower electrod-array is formed, referring to Fig. 7 k/7l.
S210: wafer is cut into face battle array, such as the sensor cover battle array of 4*4 by the cutting of sensor cover battle array, because face battle array is deposited
In the elastic insulating material of the strip of horizontal and vertical both direction, so the angle that face battle array can be certain around spherical surface direction flexing
Degree, to prepare for production spherical probe.It of courses, if without flexing, so that it may make plane probe.It can also be with
Around single axial flexing, to make cambered surface probe.It can also be around any direction and angle flexing, so that preparation has complexity
The probe of surface shape, the palpation for special screne.
Embodiment 4:
The present invention proposes a kind of preparation method of spherical probe, similar with the method that implementation 2 makes curved surface probe, still
The sensor matrices proposed using embodiment 3, sensor matrices obtained by embodiment 3 are isolated square due to upper/lower electrode
Battle array electrode, is easy to bend.Such as: it is equipped with suitable flexible circuit board, the lower electrode of face battle array can be subjected to lateral electrical connection
Later.Front then at sensor is laid with flexible circuit board, the top electrode of face battle array can be carried out longitudinal electrical connection.
The sensor array preparation method proposed according to the present invention and its curved surface according to prepared by the sensor array
Probe or spherical probe, have the following obvious advantages:
1, probe encapsulation process can avoid generating following two adverse consequences: 1) bonding thread breakage without bonding line
Caused probe reliability decrease, 2) without worrying the presence of bonding line when sensor linear array upper end coating silicone protective film
Keep its outer surface pit uneven.
2, sonde configuration is compact, and used technique is the common mature technology in this field, and manufacture craft is simple, can
By property height.
3, without making linear array and sensor unit first, directly face battle array can be pasted on and be placed in the soft of curved surface backing
Property circuit board on, to reduce the processing step of probe production, improve probe production efficiency and reliability
4, the technical program is based on it is also possible that flexible sensor array is around any direction and angle flexing, to make
The standby probe with complex surface shape, the palpation for special screne.Such as through neck complex surface pair
Thyroid gland carries out palpation.Such as, be fabricated to and the approximate shape in breast outer surface, the embeddable interior table to brassiere
Face and then comprehensive inspection that palpation is disposably carried out to mammary gland.Furthermore, it is contemplated that by flexible sensor array docile in
On air bag or liquid capsule, sensor array can change with the change of air bag, and air bag can be with examined table
Face and adaptive variation.It can thus be stated that the proposition of the technical program, the clinical application range that palpation will be imaged
Increase.
Above-described is only embodiments of the present invention, it should be noted here that for those of ordinary skill in the art
For, without departing from the concept of the premise of the invention, improvement can also be made, but these belong to protection of the invention
Range.
Claims (13)
1. a kind of preparation method of flexible sensor array, which comprises the following steps:
The first silicon wafer is selected, includes silicon dioxide layer on the first surface of first silicon wafer；
The silicon dioxide layer is etched, array of cavities is formed；
The gap of the array of cavities is etched, the deep trench intersected in length and breadth is formed, the depth of the deep trench is more than the dioxy
The thickness of SiClx layer；
Elastic insulating material is filled in the deep trench；
Soi wafer is selected, the soi wafer includes upper silicon wafer, insulating layer, lower silicon slice, by the lower silicon slice surface of the soi wafer
It is bonded with the first surface of first silicon wafer；
Remove the upper silicon wafer and insulating layer of the soi wafer；
First electrode figure is made on the lower silicon slice surface of the soi wafer；
According to the lower silicon slice of the patterning soi wafer of the first electrode, the patterned lower silicon slice has and institute
State first electrode figure having the same；
The second surface opposite with first surface of first silicon wafer is thinned, until exposing the elastic insulating material；
Second electrode is prepared on the second surface of first silicon wafer, the second electrode corresponds to the array of cavities and formed
Second electrode array；
It cuts first silicon wafer and obtains sensor array.
2. a kind of preparation method of flexible sensor array, which comprises the following steps:
The first silicon wafer is selected, includes silicon dioxide layer on the first surface of first silicon wafer；
The silicon dioxide layer is etched, array of cavities is formed；
Soi wafer is selected, the soi wafer includes upper silicon wafer, insulating layer, lower silicon slice, by the lower silicon slice surface of the soi wafer
It is bonded with the first surface of first silicon wafer；
Remove the upper silicon wafer and insulating layer of the soi wafer；
Conductive material layer is deposited on the lower silicon slice surface of the soi wafer；
It etches the lower silicon slice of the soi wafer, forms the deep trench intersected in length and breadth, array of cavities described in the deep trench interval,
It is first electrode figure that the conductive material layer, which is synchronized etching,；
Elastic insulating material is filled in the deep trench；
The second surface opposite with first surface of first silicon wafer is thinned, until exposing the elastic insulating material；
Second electrode is prepared on the second surface of first silicon wafer, the second electrode corresponds to the array of cavities and formed
Second electrode array；
It cuts first silicon wafer and obtains sensor array.
3. the preparation method of flexible sensor array according to claim 1, which is characterized in that the first electrode is corresponding
In the array of cavities be isolated electrod-array.
4. the preparation method of flexible sensor array according to claim 1 or 2, which is characterized in that the depth of the cavity
Degree is no more than the thickness of the silicon dioxide layer.
5. the preparation method of flexible sensor array according to claim 1 or 2, which is characterized in that the wherein elasticity
Insulating materials includes PDMS.
6. the preparation method of flexible sensor array according to claim 2, which is characterized in that the depth of the deep trench
More than the sum of the lower silicon slice and the thickness of the silicon dioxide layer.
7. the preparation method of flexible sensor array according to claim 2, which is characterized in that further include in the conduction
Material surface covers the elastic insulating material.
8. a kind of preparation method of curved surface palaption probe, it is characterised in that: the following steps are included:
Flexible sensor array is made, wherein the production flexible sensor array is described in any item according to claim 1-7
Method executes；
Flexible circuit board is made, is provided with electrode pad on the flexible circuit board；
By the flexible sensor array package to the flexible circuit board, the flexible sensor array and the flexibility are established
The conductive connection of circuit board；
The flexible circuit board is bonded to curved surface backing；
Surface insulation and shielding processing are carried out to the flexible sensor array.
9. the preparation method of curved surface palaption probe according to claim 8, it is characterised in that: on the flexible circuit board
Electrode pad includes first electrode pad array and second electrode pad array, respectively with the first of the flexible sensor array
Electrode, second electrode are conductively connected.
10. the preparation method of curved surface palaption probe according to claim 8 or claim 9, it is characterised in that: further include described in foundation
The step of electrical connection of electrode pad and acquisition cable.
11. the preparation method of curved surface palaption probe according to claim 8 or claim 9, it is characterised in that: further include to described soft
Property sensor array carry out surfacing processing the step of.
12. the preparation method of curved surface palaption probe according to claim 8 or claim 9, it is characterised in that: further include and acquire
The step of card, host connection.
13. the preparation method of curved surface palaption probe according to claim 8, it is characterised in that: the curved surface palaption probe
For spherical surface palaption probe.
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| CN109721023B (en) | 2020-08-28 |
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