CN110367977A

CN110367977A - A kind of photoelectricity integrates stretchable flexible nerve electrode and preparation method

Info

Publication number: CN110367977A
Application number: CN201910560592.5A
Authority: CN
Inventors: 刘景全; 吉博文; 郭哲俊; 王隆春
Original assignee: Shanghai Jiaotong University
Current assignee: Shanghai Jiaotong University
Priority date: 2019-06-26
Filing date: 2019-06-26
Publication date: 2019-10-25
Anticipated expiration: 2039-06-26
Also published as: CN110367977B

Abstract

Stretchable flexible nerve electrode is integrated the present invention provides a kind of photoelectricity and preparation method, flexible nerve electrode include first layer elastic substrates, light stimulus electrode, second layer elastic substrates and recording electrode；Wherein, light stimulus electrode and recording electrode are all made of serpentine bend wire structures；The first silicon dioxide layer is arranged in the lower surface of light stimulus electrode, and the strong chemical bond that condensation reaction generates, which occurs, for the first silicon dioxide layer and the first elastic substrates makes the light stimulus electrode adhesion on the first elastic substrates surface；Second layer elastic substrates are set on the upper surface of light stimulus electrode, the second silicon dioxide layer is arranged in the lower surface of recording electrode, the strong chemical bond that condensation reaction generates, which occurs, for the second silicon dioxide layer and the second elastic substrates makes recording electrode be bonded in the second elastic substrates surface, makes recording electrode and the integrated structure of light stimulus electrode.Flexible nerve electrode of the invention can be chronically implanted, and have highly flexible, be able to bear the deformations such as brain tissue dilation influence.

Description

A kind of photoelectricity integrates stretchable flexible nerve electrode and preparation method

Technical field

The invention belongs to the nerve microelectrodes in biomedical engineering technology field, and in particular, to a kind of photoelectricity is integrated can Stretch flexible nerve electrode and preparation method.

Background technique

With the rapid advances and development of brain-computer interface and Neuscience, deeply understand that cerebral function and disease have become Fall over each other one of the forward position direction of research in countries in the world.By flexible electronic science and MEMS micro-nano technology ability, flexible nerve is micro- Electrode is increasingly used the EEG signals for precisely acquiring high density, high information quantity, is neural circuitry functional study, brain area Lesion, which is made a definite diagnosis, nerve decodes etc. provides completely new tool.

Since the appearance of light science of heredity, people can accurately stimulate or inhibits the specific neuron of certain class, at For the nervous system disease model and the essential tool of neural circuitry functional study.Light source is introduced into the main of brain at present Mode is inserted into brain tissue by an optical fiber and is irradiated, but resolution ratio is very poor.In recent years, the optrode with aperture has been developed The light sources such as probe, optical waveguide, Minitype LED array are divided into and light source are pierced into brain depths and carries out polished bard by cerebral cortex Swash two ways.When the intrusive relatively small progress light stimulus by brain cortex surface, need to consider the swollen of brain itself Swollen and contraction bring volume change.

Through the retrieval discovery to the prior art, integrated micro LED chip array and cortex are not researched and proposed also at present The tensility brain-computer interface device of electrical signal collection function.Japanese Feng Qiao technological sciences university Morikawa Y, Yamagiwa S et al. is in Advanced healthcare materials, and 2018,7 (3): 1701100 write articles " Ultrastretchable Kirigami bioprobes " proposes that a kind of height tensility with paper-cut structure, to bear maximum strain reachable 840%, Young's modulus is only the flexible nervus of 3.6kPa.Device uses 11 microns thick of Parylene-C material conduct Flexible substrates are directly 50 microns of platinum electrode point comprising 10 altogether, and the spacing and position between electrode points can be adjusted by stretching It is whole, reduce latent lesion of device itself stress to soft brain tissue.But the device proposed only records cerebral cortex The function of ECoG signal, is not bound with other function；Total generates out-of-plane deformation after the stretch, and electrode points are difficult to keep flat Whole reliable attachment is in curved surface；Device mechanical strength is low, is easy damaged fracture, it is difficult to which chronic implantation uses.

It has been reported that the flexible nervus based on elastic polymer material (such as PDMS), in the expansion for bearing brain or squeezes When pressure, malposition of electrode and electrode can be reduced to potential mechanical damage of brain tissue etc. by pulls deformation.BeiJing, China University Zhang J, Liu X et al. are in Nano letters, and 2018,18 (5): 2903-2911 writes articles " Stretchable transparent electrode arrays for simultaneous electrical and optical Interrogation of neural circuits in vivo " integrates carbon in dimethyl silicone polymer (PDMS) substrate Nanotube electrode has certain draftability and the transparency, and the carbon nanotube electrode upper limit can be stretched to 50%, cyclic tension 20% Good chemical property still can be kept 10000 times repeatedly, finally combine a wide range of light stimulus synchronous acquisition of laser fiber ECoG cortex electric signal.Polytechnics, Zurich, SUI federation Tybrandt K, Khodagholy D et al. is in Advanced 2018,30 (15): Materials writes articles " High-density stretchable electrode grids on 1706520 For chronic neural recording ", equally integrated in PDMS substrate gold-plated titanium dioxide nano thread prepare it is highly dense Electrode is spent, chronic implantation still can collect cortex electric signal in 3 months on rat cerebral cortex.But due to brain tissue poplar Family name's modulus (~1kPa) 2-3 order of magnitude low compared to PDMS (~1Mpa), therefore more soft elastic base material is more suitable Syncerebrum tissue is chronically implanted matching, and in addition both the above electrode function is single, and there is no the light stimulus for combining precise positioning, only Not having a wide range of laser irradiation of resolution ratio stimulates.

In addition to this, University of Science and Technology, China Electronics Yan Z, Pan T et al. is in Advanced Science, and 2017,4 (11): 1700251 write articles " Thermal release transfer printing for stretchable conformal Bioelectronics " is by hot stripping tape by the polyimide-metal layer of sandwich structure-snakelike cable architecture of polyimides Electrode is transferred in PDMS substrate, it can be achieved that 10.4% stretching, and passes through acute animal experiment acquisition in rat cerebral cortex ECoG cortex electric signal.But since polyimides and PDMS itself adhesion strength are weaker, it is difficult to guarantee that device is in use Layering does not occur to be detached from, equally also there was only single eeg recording function, no and light stimulus combines.

In conclusion there is no the tensilities that report integrates accurate light stimulus and cortex electrical signal collection function at present Brain-computer interface flexible electrode, reason include processing technology complexity, and device integration is more demanding etc., thus need to research and develop it is a can To be chronically implanted, highly flexible can bear the deformations such as dilation influence, integrate the flexible neuroelectricity of accurate light stimulus function Pole, to cope with the tool demand in all kinds of brain sciences and Neuroscience Research.

Summary of the invention

For the defects in the prior art, the object of the present invention is to provide a kind of photoelectricity to integrate stretchable flexible nerve electrode And preparation method.

First aspect according to the present invention provides a kind of photoelectricity and integrates stretchable flexible nerve electrode, the flexible nerve Electrode includes first layer elastic substrates, light stimulus electrode, second layer elastic substrates and recording electrode；

Wherein, the light stimulus electrode and the recording electrode are all made of serpentine bend wire structures；

The first silicon dioxide layer, the first silicon dioxide layer and first elasticity is arranged in the lower surface of the light stimulus electrode The strong chemical bond that condensation reaction generates, which occurs, for substrate makes the light stimulus electrode adhesion on first elastic substrates surface；

The second layer elastic substrates are set on the upper surface of the light stimulus electrode, and the lower surface of the recording electrode is set The second silicon dioxide layer is set, the extensive chemical that condensation reaction generates occurs for second silicon dioxide layer and second elastic substrates Key makes the recording electrode be bonded in second elastic substrates surface, keeps the recording electrode and the light stimulus electrode integrated Integral structure.

Preferably, the first layer elastic substrates, second elastic substrates use platinum catalysis silicon rubber Dragonskin Or Ecoflex.

Further, the light stimulus electrode includes the first polyimide substrate layer, metal carbonyl conducting layer, the first polyimides envelope Fill layer and miniature LED chip, wherein the first polyimide substrate layer is located at the bottom of the light stimulus electrode, described The metal carbonyl conducting layer is arranged in first polyimide substrate layer upper surface, and the first polyimides is arranged above the metal carbonyl conducting layer The miniature LED chip is arranged on the first polyimides encapsulated layer in encapsulated layer；The lower surface of the light stimulus electrode refers to institute State the lower surface of the first polyimide substrate layer；The second layer elastic substrates are located at the upper of the first polyimides encapsulated layer Surface.

Preferably, the first polyimide substrate layer with a thickness of 2~10 μm；And/or the first polyimides envelope Fill layer with a thickness of 2~10 μm.

Further, the recording electrode include the second polyimide substrate layer, metal screen layer, polyimide insulative layer, Metal recording layer and the second polyimides encapsulated layer, wherein the second polyimide substrate layer is located at the recording electrode The metal screen layer is arranged in the bottom, the second polyimide substrate layer top, and setting is poly- above the metal screen layer The metal recording layer, setting above the metal recording layer is arranged in acid imide insulating layer, the polyimide insulative layer top The second polyimides encapsulated layer；The lower surface of the recording electrode refers to the lower surface of the second polyimide substrate layer.

Preferably, the second polyimide substrate layer with a thickness of 2~10 μm.

Preferably, the polyimide insulative layer with a thickness of 2~10 μm.

Preferably, the second polyimides encapsulated layer with a thickness of 2~10 μm.

The second aspect according to the present invention provides the preparation method that a kind of photoelectricity integrates stretchable flexible nerve electrode, packet It includes:

Light stimulus electrode and recording electrode are prepared respectively, and it is snakelike that the stimulating electrode and the recording electrode are all made of circular arc Wire structures are bent, guarantee that plain conductor is not up to yield strain critical value during stretching；

The first silicon dioxide layer is deposited in the lower surface of the light stimulus electrode, by the lower surface of the light stimulus electrode First silicon dioxide layer is transferred in the first elastic substrates, and first silicon dioxide layer and first elastic substrates are sent out Raw condensation reaction generates strong chemical bond, makes the light stimulus electrode adhesion on first elastic substrates surface；

One layer of second elastic substrates is prepared on the upper surface of the light stimulus electrode, is deposited in the lower surface of recording electrode Second silicon dioxide layer described in the lower surface of the recording electrode is transferred to the second glue elasticity base by the second silicon dioxide layer On bottom, second silicon dioxide layer and second elastic substrates occur condensation reaction and generate strong chemical bond, make the record Electrode adhesion is on second elastic substrates surface；Acquisition integrates the light stimulus electrode and the recording electrode integration device Part.

Further, it executes according to the following steps:

Step 1: use the first silicon wafer as the support substrate of light stimulus electrode；Use the second silicon wafer as the support of recording electrode Substrate；Clean first silicon wafer and second silicon wafer, after the completion of cleaning to first silicon wafer and second silicon wafer into Row baking；

Step 2: one layer of metal of thermal evaporation or sputtering is distinguished on first silicon wafer and second silicon wafer, as upper layer The last metallic release layer of structure；

Step 3: i.e. in the top spin coating of the metallic release layer and photolithography patterning polyamides Asia on first silicon wafer Amine glue forms the first polyimide substrate layer of the light stimulus electrode；It is discharged in the metal on second silicon wafer Layer top spin coating and photolithography patterning polyimides glue, form the second polyimide substrate layer of the recording electrode；

Step 4: one layer of chromium conduct is first sputtered above the first polyimide substrate layer on first silicon wafer Seed layer, then in layers of chrome sputter one layer of gold be used as metal layer, on the metal layer spin coating simultaneously photolithography patterning positive-tone photo Glue, the metal carbonyl conducting layer for completing the light stimulus electrode by ion beam etching are graphical；It is i.e. described on second silicon wafer One layer of chromium is first sputtered above second polyimide substrate layer as seed layer, then in layers of chrome one layer of gold of sputtering as metal layer, The metal screen layer for completing the recording electrode by ion beam etching is graphical；

Step 5: i.e. in the top spin coating of the metal carbonyl conducting layer and photolithography patterning polyamides Asia on first silicon wafer Amine glue forms the first polyimides encapsulated layer of the light stimulus electrode, and light stimulus electrode is completed on first silicon wafer Preparation；It is formed in the top spin coating of the metal screen layer and photolithography patterning polyimides glue on second silicon wafer The polyimide insulative layer of the recording electrode；

Step 6: the top of the i.e. polyimide insulative layer first sputters one layer of chromium on second silicon wafer, then in layers of chrome One layer of gold of upper sputtering forms metal recording layer, spin coating and photolithography patterning positive photoresist on the metal recording layer, finally The metal recording layer for completing the recording electrode by ion beam etching is graphical；

Step 7: being spin coating and photolithography patterning polyimides glue above the metal recording layer on second silicon wafer, The the second polyimides encapsulated layer for forming the recording electrode completes the preparation of recording electrode on second silicon wafer；

Step 8: it is covered each by with dust-free paper or non-dust cloth in the top of first silicon wafer and second silicon wafer, then used The sheet glass with first silicon wafer and the second silicon wafer same diameter size is completely covered respectively, will be superimposed later First silicon wafer and sheet glass, second silicon wafer and sheet glass be immersed in hydrochloric acid solution, sacrifice first silicon wafer With the metallic release layer on second silicon wafer；

Step 9: and then by first silicon wafer and sheet glass that are superimposed, second silicon wafer and sheet glass It is put into deionized water to impregnate, rinse and dry, completes the release of the light stimulus electrode and the recording electrode；

Step 10: the light stimulus electrode is sticked up from first silicon wafer using water-soluble adhesive tape, makes first silicon Piece and the light stimulus electrode separation, the following table of the light stimulus electrode are fixed on substrate up, then in the light The lower surface of stimulating electrode first sputters one layer of titanium, then the first silicon dioxide layer is sputtered on titanium layer；

The recording electrode is sticked up from second silicon wafer using water-soluble adhesive tape, makes second silicon wafer and the note Record electrode separation；The following table of the recording electrode is fixed on substrate up, then in the lower surface of the recording electrode One layer of titanium is first sputtered, then sputters the second silicon dioxide layer on titanium layer；

Step 11 chooses sheet glass, and one layer of PI glue band of side's covering, is deposited with a strata pair for surface later on the glass sheet The glass slide of dimethylbenzene is fixed on the sheet glass with the PI glue band, and is sprayed on Parylene on glass slide One layer of release agent, later on the release agent one layer of super-elasticity silicon rubber of spin coating as the first elastic substrates layer；

Step 12: using the first elastic substrates layer described in UV ultraviolet light, the light stimulus electrode will be stained with again later Water-soluble adhesive tape be transferred to the first elastic substrates layer surface, so that light stimulus electrode sputtering is had the first silicon dioxide layer One side contacted with the first elastic substrates layer surface, and under certain pressure effect, place in baking oven, hot water dissolving later The water-soluble adhesive tape；

Step 13: mask alignment is attached on the light stimulus electrode, i.e., the described first polyimides encapsulated layer it is upper Surface is used to brush conductive silver paste by the metal pad of exposure mask exposure, completes solder figure on the light stimulus electrode Change；

Step 14: utilizing graphical mold, and reverse mould obtains cavity plate seal, miniature LED chip is fixed on to the pit of seal It is interior, the transfer of multiple miniature LED chips is completed, miniature LED chip array is formed, is put into baking oven, make on the light stimulus electrode The conductive silver paste be fully cured and conductive；

Step 15: brushing conductive silver paste using exposure mask in the tail end of the light stimulus electrode and form light stimulus electrode interface, PI soft arranging wire is chosen, the PI soft arranging wire is directed at the light stimulus electrode interface under the covering of coverslip, makes the polished bard The front end for swashing electrode interface and the PI soft arranging wire links into an integrated entity device, keeps being put into baking oven under the pressure effect of top；

Step 16: sealant is coated in the light stimulus electrode interface and the PI soft arranging wire join domain, to entire institute It states device surface and carries out oxygen plasma pretreatment, and pet film is covered in the PI soft arranging wire Rear end, one layer of super-elasticity silicon rubber of spin coating is as the second elastic substrates layer on entire first silicon wafer, and after the spin-coating immediately Pet film is opened, the rear end exposure of the PI soft arranging wire is made；

Step 17: using the second elastic substrates layer described in UV ultraviolet light, the note is stained with by what is prepared in step 10 The water-soluble adhesive tape for recording electrode is directed at position, has being transferred on one side for the second silicon dioxide layer described recording electrode sputtering Second elastic substrates layer surface, and under certain pressure effect, it places in baking oven, is subsequently placed into hot water and dissolves water-soluble glue Band；

Step 18: the regional area in the recording electrode rear end brushes conductive silver paste using exposure mask, forms recording electrode Interface, then PI soft arranging wire is chosen, the PI soft arranging wire is registered to the recording electrode interface under the covering of coverslip, is kept Under the effect of top pressure, it is put into baking oven；

Step 19: in the recording electrode interface and the PI soft arranging wire join domain silicone-coating sealant, by swashing Light cuts the first elastic substrates layer and the second elastic substrates layer obtains the profile of integrated device；

Step 20: entire integrated device is discharged from glass slide, and electrochemistry is carried out to the electrode points of the integrated device It is modified.

Preferably, in step 2, the metal of the releasing layer of first silicon wafer and/or second silicon wafer uses aluminium or copper, The metallic release layer of first silicon wafer and/or second silicon wafer with a thickness of 200~1000nm.

Preferably, in-step 4, first silicon wafer, second silicon wafer the seed layer with a thickness of 10~ 50nm；First silicon wafer, second silicon wafer the metal layer with a thickness of 100~500nm；

In step 6, the top of i.e. polyimide insulative layer first sputters one layer of chromium on second silicon wafer, then in layers of chrome It is upper sputtering one layer gold formed metal recording layer, wherein the chromium with a thickness of 10~50nm；The gold with a thickness of 100~ 500nm。

In step 10, one layer of titanium is first sputtered in the lower surface of the light stimulus electrode, then sputters one layer of dioxy on titanium layer SiClx, wherein titanium with a thickness of 3~10nm；Silica with a thickness of 30~100nm；

One layer of titanium is first sputtered in the lower surface of the recording electrode, then sputters layer of silicon dioxide on titanium layer, the thickness of titanium Degree is 3~10nm；Silica with a thickness of 30~100nm.

Compared with prior art, the present invention have it is following at least one the utility model has the advantages that

1, accurate light stimulus function is integrated in stretchable flexible nerve electrode for the first time in above structure of the present invention, even if Under deformation condition, the relative position of light stimulus site and recording electrode point will not change, and ensure that stimulation and record position The reliability set；Such flexibility nerve electrode has filled up the blank that domestic and international stretchable photoelectricity integrates brain-computer interface device, has latent Power provides strong branch stake tool for Neuscience and brain science research.And light stimulus electrode and recording electrode are adopted in above structure With serpentine wire structure, there is certain draftability, super-elasticity silicone rubber substrate can be followed to deform, can be chronically implanted, height is soft Property, it is able to bear the deformations such as brain tissue dilation influence；

2, further, it is lower than the super-elasticity platinum catalysis silicon of most common PDMS in above structure of the present invention using Young's modulus Rubber Dragonskin or Ecoflex series facilitate the draftability for promoting electrode, between cerebral cortex as electrode basement Conformal attaching state is more readily formed.

3, in the above-mentioned preparation method of the present invention, by transfer method by be integrated with miniature LED chip light stimulus electrode and Recording electrode becomes one, and flexible nerve electrode integrated level is high in the present invention, and MEMS processing technology difficulty is low, and highly flexible can With deformation occurs with the dilation of brain tissue, it is more suitable and is chronically implanted in Mice Body, carry out the length based on light science of heredity The research of phase neural circuitry and the nervous system disease model.

4, it is being based on above structure of the present invention and preparation method, is can according to need and replaces different elastic substrates and electrode Substrate material, the integrated process flow without changing electrode.

Detailed description of the invention

Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention, Objects and advantages will become more apparent upon:

Fig. 1 a is the structural schematic diagram that the photoelectricity of one embodiment of the present invention integrates stretchable flexible nerve electrode；

Fig. 1 b is the partial enlargement structural representation of light stimulus electrode in Fig. 1 a；

Fig. 1 c is the partial enlargement structural representation of recording electrode in Fig. 1 a；

Fig. 2 is the integrated process flow figure that the photoelectricity in the embodiment of the present invention integrates stretchable flexible nerve electrode；

Fig. 3 is relative position and the scale diagrams of the recording electrode point and miniature LED chip in the embodiment of the present invention；

Fig. 4 is cross section structure and the size signal that the photoelectricity in the embodiment of the present invention integrates stretchable flexible nerve electrode Figure；

Fig. 5 a is the serpentine structural design drawing that the photoelectricity in the embodiment of the present invention integrates stretchable flexible nerve electrode；

Fig. 5 b is the deformation front and back schematic diagram of the snakelike cable architecture of simple tension in Fig. 5 a；

Fig. 5 c is serpentine structural parameters schematic diagram in Fig. 5 a；

Fig. 6 is that the photoelectricity in the embodiment of the present invention integrates stretchable flexible nerve electrode device photo；

Fig. 7 integrates stretchable flexible nerve electrode for the photoelectricity in the embodiment of the present invention and synchronizes in Cerebral Cortex Light stimulus and electrographic recording operation schematic diagram；

Figure acceptance of the bid note is expressed as: the first elastic substrates layer 1, the first silicon dioxide layer 2, the first polyimide substrate layer 3, metal carbonyl conducting layer 4, the first polyimides encapsulated layer 5, miniature LED chip 6, the second elastic substrates layer 7, the second silicon dioxide layer 8, the second polyimide substrate layer 9, metal screen layer 10, polyimide insulative layer 11, metal recording layer 12, the second polyimides Encapsulated layer 13, recording electrode point 14, reference electrode point 15, serpentine bend wire structures 16,470nm blue light 17, EEG signals are adopted Collect site 18, LED power supply winding displacement 19, eeg signal acquisition winding displacement 20.

Specific embodiment

The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention Protection scope.Do not have the part being described in detail, can realize using the prior art in following embodiment of the present invention.

Referring to Fig.1 shown in a, 1b, 1c, the structure of the preferred embodiment of stretchable flexible nerve electrode is integrated for a kind of photoelectricity Schematic diagram, flexible nerve electrode include first layer elastic substrates 1, light stimulus electrode, second layer elastic substrates 7 and recording electrode； Light stimulus electrode and recording electrode are all made of circular arc serpentine bend wire structures 16；The lower surface setting the one or two of light stimulus electrode The strong chemical bond that condensation reaction generates, which occurs, for silicon oxide layer 2, the first silicon dioxide layer 2 and the first elastic substrates 1 keeps light stimulus electric Pole is bonded in 1 surface of the first elastic substrates；Second layer elastic substrates 7, note are set on the another side (upper surface) of light stimulus electrode The second silicon dioxide layer 8 is arranged in the lower surface for recording electrode, and condensation reaction occurs for the second silicon dioxide layer 8 and the second elastic substrates 7 The strong chemical bond of generation makes recording electrode be bonded in 7 surface of the second elastic substrates, makes recording electrode and light stimulus electrode integrated one Body structure.

In other preferred embodiments, first layer elastic substrates 1 and second layer elastic substrates 7 are selected using Young's modulus Super-elasticity platinum catalysis silicon rubber Dragonskin or Ecoflex series lower than most common PDMS.The U.S. can specifically be selected The platinum catalysis silicon rubber Dragonskin of Smooth-on company production.Platinum catalysis silicon rubber Dragonskin Young's modulus is 166kPa, Ecoflex Young's modulus are 60kPa, generally use dimethyl silicone polymer (PDMS) in the prior art and do elasticity Substrate, the Young's modulus range of PDMS is in 0.5~1.8MPa, super-elasticity platinum catalysis silicon rubber Dragonskin or Ecoflex system Column Young's modulus is lower than most common PDMS.Using elastic material as substrate, electrode flexibility can be improved.

In other preferred embodiments, light stimulus electrode includes the first polyimide substrate layer 3, metal carbonyl conducting layer 4, first Polyimides encapsulated layer 5 and miniature LED chip 6, wherein the first polyimide substrate layer 3 is located at the bottom of light stimulus electrode, Metal carbonyl conducting layer 4 is arranged in first polyimide substrate layer, 3 upper surface, and the encapsulation of the first polyimides is arranged above metal carbonyl conducting layer 4 Miniature LED chip 6 is arranged on first polyimides encapsulated layer 5 in layer 5；The lower surface of light stimulus electrode refers to that the first polyimides serves as a contrast The lower surface of bottom 3；Second layer elastic substrates are located at the upper surface of the first polyimides encapsulated layer 5.

In some embodiments, miniature LED chip 6 can select U.S.'s Cree company model be TR2227 or The gallium nitride based LED bare chip of TR1823, with a thickness of 50 μm.Corresponding SU-8 negative photoresist mold height is 20~30 μm, long Degree and width dimensions are 5~10 μm bigger than miniature 6 size of LED chip, in order to which miniature LED chip 6 positions and separates.

In other embodiments, the first polyimide substrate layer 3 with a thickness of 2~10 μm；First polyimides encapsulated layer 5 With a thickness of 2~10 μm.

In other embodiments, recording electrode includes the second polyimide substrate layer 9, metal screen layer 10, polyimides Insulating layer 11, metal recording layer 12 and the second polyimides encapsulated layer 13, wherein the second polyimide substrate layer 9 is located at record Metal screen layer 10 is arranged above the second polyimide substrate layer 9, polyamides is arranged above metal screen layer 10 for the bottom of electrode Metal recording layer 12 is arranged above polyimide insulative layer 11 for imines insulating layer 11, and setting second is poly- above metal recording layer 12 Acid imide encapsulated layer 13；The lower surface of recording electrode refers to the lower surface of the second polyimide substrate layer 9.

In other embodiments, the second polyimide substrate layer 9 with a thickness of 2~10 μm；Polyimide insulative layer 11 With a thickness of 2~10 μm；Second polyimides encapsulated layer 13 with a thickness of 2~10 μm.

In one embodiment, flexible nerve electrode includes 9 recording electrode points, 14,1 reference electrode point 15 and 4 Miniature LED chip 6 can adjust 14 size of recording electrode point, recording electrode point 14 and miniature LED according to target animal tissue 6 quantity of chip and distributing position etc..

The structure feature of flexible nerve electrode based on the above embodiment provides a kind of photoelectricity and integrates stretchable flexible nerve The embodiment of the preparation method of electrode, preparation method include:

Light stimulus electrode and recording electrode are prepared respectively, and stimulating electrode and recording electrode are all made of the wiring of circular arc serpentine bend Structure 16 guarantees that plain conductor is not up to yield strain critical value during stretching.

The first silicon dioxide layer 2 is deposited in the lower surface of light stimulus electrode, will remember the 1st of light stimulus electrode lower surface the Silicon oxide layer 2 is transferred in the first elastic substrates 1, and the first silicon dioxide layer 2 and the anti-raw condensation reaction of the first elastic substrates 1 generate Strong chemical bond makes light stimulus electrode adhesion on 1 surface of the first elastic substrates；On the another side (upper surface) of light stimulus electrode One layer of second elastic substrates 7 is prepared, the second silicon dioxide layer 8 is deposited in recording electrode lower surface, by recording electrode lower surface Second silicon dioxide layer 8 is transferred in the second glue elasticity substrate, the second silicon dioxide layer 8 and the anti-raw condensation of the second elastic substrates 7 Reaction generates strong chemical bond, and recording electrode is made to be bonded in 7 surface of the second elastic substrates, obtains Integrated Light stimulating electrode and record electricity Extremely integrated device.

In a preferred embodiment, a kind of photoelectricity integrates the preparation method of stretchable flexible nerve electrode, according to the following steps It executes:

Step 1: use the first silicon wafer as the support substrate of light stimulus electrode；Use the second silicon wafer as the support of recording electrode Substrate；The first silicon wafer and the second silicon wafer are cleaned, the first silicon wafer and the second silicon wafer are toasted after the completion of cleaning.

Step 2: distinguishing one layer of metal of thermal evaporation or sputtering on the first silicon wafer and the second silicon wafer, last as superstructure Metallic release layer.

The metal of the releasing layer of first silicon wafer and/or the second silicon wafer uses aluminium or copper, the first silicon wafer and/or the second silicon wafer Metallic release layer with a thickness of 200~1000nm.

Step 3: it is formed in the top spin coating of metallic release layer and photolithography patterning polyimides glue on the first silicon wafer First polyimide substrate layer 3 of light stimulus electrode；I.e. in the top spin coating of metallic release layer and photoetching figure on the second silicon wafer Shape polyimides glue forms the second polyimide substrate layer 9 of recording electrode.

Step 4: one layer of chromium (Cr) is first sputtered above the first polyimide substrate layer 3 on the first silicon wafer, then in chromium One layer of gold (Au) is sputtered on layer and is used as metal layer, and spin coating and photolithography patterning positive photoresist, pass through ion beam on the metal layer The metal carbonyl conducting layer 4 that etching completes light stimulus electrode is graphical；It is first above the second polyimide substrate layer 9 on the second silicon wafer One layer of chromium (Cr) is sputtered, then sputters one layer of gold (Au) in layers of chrome and is used as metal layer, the record is completed by ion beam etching The metal screen layer 10 of electrode is graphical.

On the first silicon wafer i.e. above polyimide substrate layer sputter chromium (Cr) layer with a thickness of 10~50nm；In chromium (Cr) sputtered on layer golden (Au) layer with a thickness of 100~500nm.

On the second silicon wafer be polyimide substrate layer above sputter layers of chrome with a thickness of 10~50nm；On chromium (Cr) layer Gold (Au) layer of sputtering with a thickness of 100~500nm.

Step 5: i.e. in the top spin coating of metal carbonyl conducting layer 4 and photolithography patterning polyimides glue, shape on the first silicon wafer At the first polyimides encapsulated layer 5 of light stimulus electrode, the preparation of light stimulus electrode is completed on the first silicon wafer；In the second silicon wafer Upper is the top spin coating in metal screen layer 10 and photolithography patterning polyimides glue, forms the polyimide insulative of recording electrode Layer 11.

Step 6: the top of i.e. polyimide insulative layer 11 first sputters one layer of chromium (Cr) on the second silicon wafer, then in layers of chrome One layer of gold (Au) is sputtered, metal recording layer 12 is formed, spin coating and photolithography patterning positive photoresist on metal recording layer 12, most The metal recording layer 12 for completing recording electrode by ion beam etching afterwards is graphical；Wherein, chromium (Cr) layer with a thickness of 10~ 50nm；Golden (Au) layer with a thickness of 100~500nm.

Step 7: it is spin coating and photolithography patterning polyimides glue above metal recording layer 12 on the second silicon wafer, forms note The the second polyimides encapsulated layer 13 for recording electrode completes the preparation of recording electrode on the second silicon wafer.

Step 8: being covered each by above the first silicon wafer and the second silicon wafer with dust-free paper or non-dust cloth, then with respectively with first Silicon wafer and the sheet glass of the second silicon wafer same diameter size are completely covered, the first silicon wafer and glass that will be superimposed later Piece, the second silicon wafer and sheet glass are immersed in hydrochloric acid solution, sacrifice the metallic release layer on the first silicon wafer and the second silicon wafer.

Using dust-free paper or non-dust cloth, main function is the metallic release layer that guarantees hydrochloric acid solution and can permeate with electrode Contact；Due to maying be laminated between silicon wafer and sheet glass, metallic release layer and hydrochloric acid solution are connect for recording electrode and light stimulus electrode Touching reaction is slow, therefore soaking time needed to be appropriately extended to 1-2 days, and the metallic release layer to guarantee polyimides lower layer is complete Full etching reaction is clean.

Step 9: and then by the first silicon wafer and sheet glass that are superimposed, the second silicon wafer and sheet glass be put into from Sub- water impregnates, rinses and dry, and completes the release of light stimulus electrode and recording electrode.

Step 10: sticking up light stimulus electrode using water-soluble adhesive tape from the first silicon wafer, makes the first silicon wafer and light stimulus electricity Pole separation, the following table of light stimulus electrode is fixed on substrate up, then first sputters one in the lower surface of light stimulus electrode Layer titanium (Ti), then the first silica (SiO is sputtered on titanium layer₂) layer；Wherein, titanium (Ti) layer with a thickness of 3~10nm, titanium (Ti) it is used as adhesion layer, improves the binding force of the first silicon dioxide layer 2 and the first polyimide substrate.First silicon dioxide layer 2 With a thickness of 30~100nm, the first silica (SiO₂) layer will chemically react with silicone rubber substrate.

Recording electrode is sticked up from the second silicon wafer using water-soluble adhesive tape, separates the second silicon wafer with recording electrode；It will note The following table of record electrode is fixed on substrate up, then first sputters one layer of titanium (Ti) in the lower surface of recording electrode, then in titanium The second silica (SiO is sputtered on layer₂) layer 8, titanium (Ti) layer with a thickness of 3~10nm；Titanium (Ti) layer is improved as adhesion layer The binding force of second silicon dioxide layer 8 and the second polyimide substrate layer 9.Second silicon dioxide layer 8 with a thickness of 30~ 100nm, the second silica (SiO₂) layer 8 will chemically react with silicone rubber substrate.

Step 11 chooses sheet glass, and one layer of PI glue band of side's covering, is deposited with a strata pair for surface later on the glass sheet The glass slide of dimethylbenzene is fixed on the glass sheet with PI glue band, and sprays one layer of demoulding on Parylene on glass slide Agent, later on release agent one layer of super-elasticity silicon rubber of spin coating as the first elastic substrates layer 1；The super-elasticity silicon rubber of spin coating selects Platinum catalysis silicon rubber Dragonskin or the Ecoflex series for taking Smooth-on company, the U.S. to produce.

Step 12: the first elastic substrates of UV ultraviolet light layer 1 is used, the water solubility of light stimulus electrode will be stained with again later Adhesive tape is transferred to 1 surface of the first elastic substrates layer, and the sputtering of light stimulus electrode is made to have the one side of the first silicon dioxide layer 2 and the first bullet Property the contact of 1 surface of basal layer place in baking oven, hot water dissolving's water-soluble adhesive tape later and under certain pressure effect.

Step 13: mask alignment is attached on light stimulus electrode, is used to brush to lead by the metal pad of exposure mask exposure It is graphical to complete solder on light stimulus electrode for electric silver paste；In a particular embodiment exposure mask be PET, PET mask thicknesses be 12.5~ It 25 μm, is cut by laser, etches the aperture that diameter is 75~80 μm, guarantee the metal for exposing light stimulus electrode when alignment Pad obtains patterned conductive silver paste in order to brush, for being connected and fixed miniature LED chip 6.

Step 14: utilizing graphical mold, and reverse mould obtains cavity plate seal, miniature LED chip 6 is fixed on to the pit of seal It is interior, the transfer of multiple miniature LED chips 6 is completed, miniature 6 array of LED chip is formed, is put into baking oven, makes on light stimulus electrode Conductive silver paste is fully cured and conduction.

Step 15: conductive silver paste is brushed using exposure mask in the tail end of light stimulus electrode and forms light stimulus electrode interface, is chosen PI soft arranging wire is directed at light stimulus electrode interface by PI soft arranging wire under the covering of coverslip, keeps light stimulus electrode interface and PI soft The front end of winding displacement links into an integrated entity device, keeps being put into baking oven under the pressure effect of top；It is used when brushing conductive silver paste It can be 15~25 μm of stainless steel substrates that mask material, which selects thickness, be cut by laser than electrode interface oblong pad ruler Very little small aperture avoids conductive silver paste during covering from being diffused into adjacent welding disking area.

Step 16: coating sealant in light stimulus electrode interface and PI soft arranging wire join domain, to entire device surface into Row oxygen plasma pre-processes, and pet film is covered in the rear end of PI soft arranging wire, in entire glass One layer of super-elasticity silicon rubber of glass on piece spin coating opens poly terephthalic acid as the second elastic substrates layer 7 immediately after the spin-coating Glycol ester film makes the rear end exposure of PI soft arranging wire；When specific implementation: oxygen plasma pretreatment time is 30~120 seconds, Main purpose is to guarantee to combine firm and sealing effect between elastic silicone rubber encapsulated layer and silicon rubber substrate layer.

Step 17: using the second elastic substrates of UV ultraviolet light layer 7, the recording electrode that is stained with that will be prepared in step 10 Water-soluble adhesive tape is directed at position, is transferred to the second elastic substrates layer 7 on one side for what recording electrode sputtering had the second silicon dioxide layer 8 Surface, and under certain pressure effect, it places in baking oven, is subsequently placed into hot water and dissolves water-soluble adhesive tape.

Step 18: recording electrode interface brushes conductive silver paste using exposure mask, by PI soft arranging wire pair under the covering of coverslip Standard arrives recording electrode interface, keeps being put into baking oven under the pressure effect of top.

Step 19: in recording electrode interface and PI soft arranging wire join domain silicone-coating sealant, silicon is cut by laser Caoutchouc elasticity basal layer and silicon rubber elastic encapsulated layer, obtain the profile of integrated device.

Step 20: entire integrated device is discharged from glass slide, and electrochemical modification is carried out to the electrode points of integrated device.

In other preferred embodiments, electrode modified material can select yttrium oxide (IrOx), Polyglycolic acid fibre (PEDOT:PSS), platinum black (Pt-black) etc., electrochemical impedance, promotion signal-to-noise ratio for reducing electrode points, guarantees good Picking up signal ability.

In one embodiment, referring to shown in Fig. 2, photoelectricity is integrated in the preparation method of stretchable flexible nerve electrode Integrated process flow figure, comprising the following steps:

Step 1: covering strata acid imide (PI) adhesive tape in 3 cun of transparent glass on pieces, surface is then deposited with one layer The transparent glass slide of Parylene (Parylene-C), it is fixed on the glass sheet with polyimides (PI) adhesive tape both ends, and spray Coating release agent, the Dragonskin super-elasticity silicon rubber that subsequent spin coating a layer thickness is 100 μm is as the first elastic substrates layer 1.

Step 2: will be with a thickness of 12.5 μm of polyethylene terephthalate (PET) exposure mask pair in three axis mobile stations Standard is attached on light stimulus electrode, and circular opening diameter dimension is 80 μm, and the metal pad of alignment light stimulus electrode is brushed conductive Silver paste opens PET exposure mask, and it is graphical to complete conductive silver paste.

Step 3: the first elastic substrates of UV ultraviolet light layer 110 minutes, the U.S. of light stimulus electrode will be stained with AQUASOL water-soluble adhesive tape is transferred to 1 surface of the first elastic substrates layer, and under certain pressure effect, places in 80 degree of baking ovens It 10 minutes, is then stirred in 50 degree of hot water, dissolves water-soluble adhesive tape.

Step 4: SU-8 punch structure of the photolithography patterning with a thickness of 25 μm, spin coating liquid PDMS, solidification reverse mould obtain Miniature LED chip 6 is fixed in seal pit by PDMS cavity plate seal, and 6 gusts of miniature LED chip is completed in three axis mobile stations The transfer of column is then placed 6 hours in 100 degree of baking ovens.

Step 5: light stimulus electrode interface, which utilizes, brushes conductive silver paste with a thickness of 20 μm of stainless steel exposure mask, length is chosen For the PI soft arranging wire of 35mm, it is directed at light stimulus electrode interface under the covering of coverslip, keeps being put under the pressure effect of top 100 degree of baking ovens, 6 hours completion conductive silver pastes sufficiently solidify.

It is completed step 6: light stimulus electrode interface and PI soft arranging wire join domain coat elastic transparent silicone sealant 705 Interface encapsulation then carries out oxygen plasma to entire device surface and pre-processes 60 seconds, and covers short PI soft arranging wire with PET film Rear end.Entire device surface spin coating a layer thickness be 100 μm Dragonskin super-elasticity silicon rubber as the second elastic base Bottom 7, and remove PET film immediately after the spin-coating, guarantee the exposure of short PI soft arranging wire rear end.

Step 7: the second elastic substrates of UV ultraviolet light layer 710 minutes, the AQUASOL for being stained with recording electrode is water-soluble Property adhesive tape be directed at position, be transferred to 7 surface of the second elastic substrates layer, and under certain pressure effect, place 10 in 80 degree of baking ovens Minute, it is then stirred in 50 degree of hot water, dissolves water-soluble adhesive tape.

Step 8: recording electrode interface, which utilizes, brushes conductive silver paste with a thickness of 20 μm of stainless steel exposure mask, in coverslip Lower alignment PI soft arranging wire is covered to recording electrode interface, keeps being put under the pressure effect of top and completing within 100 degree of baking ovens 6 hours to lead Electric silver paste sufficiently solidifies.

It completes to connect step 9: recording electrode interface and PI soft arranging wire join domain coat elastic transparent silicone sealant 705 Mouth encapsulation, uses power for the laser of 400W, cuts silicon rubber elastic basal layer and silicon rubber elastic encapsulated layer, obtains precisely electric Pole profile.

Step 10: gently being provoked from glass slide with tweezers, i.e., the releasable device entirely integrated, and molten in chloroplatinic acid It is modified to complete electrode points for ultrasonic electroplating platinum black in liquid.

It is relative position and the dimensional drawing of recording electrode point 14 and miniature LED chip 6,3 × 3 record electricity referring to shown in Fig. 3 14 diameter of recording electrode point is 100 μm in the array of pole, and center spacing is 700 μm, and reference electrode diameter is 250 μm, and 2 × 2 is miniature In 6 array of LED chip, 4 recording electrode points 14 are distributed with around each LED, miniature LED chip 6 having a size of 180 × 230 μm, The center spacing of adjacent miniature LED chip 6 is similarly 700 μm.

Referring to shown in Fig. 4, the cross section structure and scale diagrams of stretchable flexible nerve electrode are integrated for photoelectricity, can be seen It arriving, miniature LED chip 6 can be about 470nm blue light 17 through nearly transparent Dragonskin silicon rubber outgoing dominant wavelength, and And certain distance is maintained in the horizontal direction with recording electrode point 14；Light stimulus thickness of electrode be 10 μm, recording electrode with a thickness of 7.5 μm, for miniature LED with a thickness of 50 μm, elastic substrates layer and spring packaging thickness degree are 100 μm.

Referring to shown in Fig. 5 a, 5b, the serpentine structural design drawing of stretchable flexible nerve electrode is integrated for photoelectricity, can be seen Out, with the stretching of elastic substrates, the snakelike conducting wire of electrode can bear a degree of deformation, the stretchable flexible mind of design Through electrode towards Cerebral Cortex model, serpentine wire can occupy bigger plane space compared to straight line, it is therefore desirable to the greatest extent may be used Line width can be reduced, but to take into account the reliability of device simultaneously, plain conductor is meticulous to be more easier to lose during making and using Effect, therefore, referring to shown in Fig. 5 c, snakelike cable architecture design uses following design parameter: central angle θ=225 degree, plain conductor are wide Spend W_metal=25 μm, conductor width W_PI=50 μm, R=50 μm of angular radius in circular arc.

Referring to shown in Fig. 6, stretchable flexible nerve electrode device photo is integrated for photoelectricity, is locally put by electrode front end Greatly, it can be seen that the relative position of recording electrode point 14 and miniature LED chip 6 after integrated, 7 upper surface of the second elastic substrates Reflective lines is the SiO that water-soluble glue belt surface is deposited during transferring recording electrode₂Film belongs to transparent membrane, no Influence the transillumination of LED light.

Referring to shown in Fig. 7, stretchable flexible nerve electrode is integrated for photoelectricity and synchronizes light stimulus in Cerebral Cortex With electrographic recording operation schematic diagram, device can be attached to the use of Cerebral Cortex unilateral side brain area, recording electrode and light stimulus electrode It works at the same time, by eeg signal acquisition winding displacement 20, LED power supply winding displacement 19, carries out the acquisition of eeg signal acquisition site 18 and LED Power supply.

In the specific implementation, the Dragonskin silicon rubber that can also be 160kPa by Young's modulus, replaces with Young mould Amount is the Ecoflex silicon rubber of 60kPa.More soft elastic substrates help to promote the draftability of electrode, and and brain Conformal attaching state is more readily formed between cortex.Meanwhile it can be by the first polyimide substrate layer 3 and polished bard of recording electrode The the second polyimide substrate layer 9 for swashing electrode changes transparent Parylene-C, recording electrode forward metal layer, that is, metal record into Layer 12 front end recording electrode point 14 and nearby line change transparent conductive material into, such as: use tin indium oxide, graphene or Silver nanowires etc. is enhanced the transparency in order to carry out optical microscope, while can mitigate illumination in metal recording electrode point Bring photoelectricity artefact on 14, avoids interfering nerve signal.It is different that flexible nerve electrode can according to need replacement Elastic substrates and electrode substrate material, the integrated process flow without changing electrode.

In another embodiment, photoelectricity integrates the preparation method of stretchable flexible nerve electrode, related step with Above-mentioned specific embodiment is identical, and variation mainly integrates the cross section structure and scale diagrams of stretchable flexible nerve electrode in photoelectricity In the selection of the thickness of electrode of middle recording electrode and light stimulus electrode.Since light stimulus electrode needs to brush conductive silver paste and transfers micro- Type LED chip 6 needs harder substrate, thicker especially when carrying out squeezing transfer on more soft elastic substrates layer PI electrode substrate can provide harder support, and therefore, the first polyimide substrate layer 3 of light stimulus electrode and the first polyamides are sub- Amine encapsulated layer 5, it is 10 μm that thickness, which can increase, and light stimulus electrode overall thickness reaches 20 μm.

Meanwhile recording electrode being attached to the upper surface of the second elastic substrates layer 7, compared to being encapsulated in two layers of elastic substrates Light stimulus electrode inside layer and spring packaging layer, metal recording layer 12 bears bigger strain during stretching, it is easier to Failure, and it is overall by increasing the second polyimide substrate layer 9, polyimide insulative layer 11 and the second polyimides encapsulated layer 13 Thickness, can effectively mitigate influence of 7 drawing process of the second elastic substrates layer to recording electrode inner metal layer, therefore, record (i.e. second is poly- for the polyimides encapsulated layer of electrode polyimide substrate layer (i.e. the second polyimide substrate layer 9) and recording electrode Acid imide encapsulated layer 13) thickness can increase to 5 μm, and 11 thickness of recording electrode polyimide insulative layer remains unchanged, and is conducive to The electromagnetic shielding capability of recording electrode metal screen layer 10 is played, recording electrode overall thickness reaches 12.5 μm.

The integrated approach of flexible nerve electrode can extend integrated more different types of flexible biological signal transducers and In actuator to flexible nerve electrode, the invention for the high integration brain-computer interface of function complexity provides possibility.

Specific embodiments of the present invention are described above, it is to be understood that the invention is not limited to above-mentioned Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow Ring substantive content of the invention.

Claims

1. a kind of photoelectricity integrates stretchable flexible nerve electrode, which is characterized in that the flexibility nerve electrode includes first layer bullet Property substrate, light stimulus electrode, second layer elastic substrates and recording electrode；Wherein,

The light stimulus electrode and the recording electrode are all made of serpentine bend wire structures；

The first silicon dioxide layer, first silicon dioxide layer and first elasticity is arranged in the lower surface of the light stimulus electrode The strong chemical bond that condensation reaction generates, which occurs, for substrate makes the light stimulus electrode adhesion on first elastic substrates surface；

The second layer elastic substrates are set on the upper surface of the light stimulus electrode, the lower surface setting of the recording electrode the Two silicon dioxide layers, with second elastic substrates strong chemical bond that condensation reaction generates, which occurs, for second silicon dioxide layer makes The recording electrode is bonded in second elastic substrates surface, keeps the recording electrode and the light stimulus electrode integrated Structure.

2. a kind of photoelectricity according to claim 1 integrates stretchable flexible nerve electrode, which is characterized in that the first layer Elastic substrates, second elastic substrates use platinum catalysis silicon rubber Dragonskin or Ecoflex.

3. a kind of photoelectricity according to claim 1 integrates stretchable flexible nerve electrode, which is characterized in that the light stimulus Electrode includes the first polyimide substrate layer, metal carbonyl conducting layer, the first polyimides encapsulated layer and miniature LED chip, wherein institute The bottom that the first polyimide substrate layer is located at the light stimulus electrode is stated, the first polyimide substrate layer upper surface is set The metal carbonyl conducting layer is set, the first polyimides encapsulated layer is set above the metal carbonyl conducting layer, first polyamides is sub- The miniature LED chip is set on amine encapsulated layer；The lower surface of the light stimulus electrode, that is, the first polyimide substrate layer Lower surface；The second layer elastic substrates are located at the upper surface of the first polyimides encapsulated layer.

4. a kind of photoelectricity according to claim 3 integrates stretchable flexible nerve electrode, it is characterised in that: described first is poly- Acid imide substrate layer with a thickness of 2~10 μm；The first polyimides encapsulated layer with a thickness of 2~10 μm.

5. a kind of photoelectricity according to claim 1 integrates stretchable flexible nerve electrode, which is characterized in that the record electricity Pole includes the second polyimide substrate layer, metal screen layer, polyimide insulative layer, metal recording layer and the second polyimides envelope Fill layer, wherein the second polyimide substrate layer is located at the bottom of the recording electrode, second polyimide substrate The metal screen layer is arranged in layer top, polyimide insulative layer is arranged above the metal screen layer, the polyimides is exhausted The metal recording layer is set above edge layer, the second polyimides encapsulated layer is set above the metal recording layer；It is described The lower surface of recording electrode refers to the lower surface of the second polyimide substrate layer.

6. a kind of photoelectricity according to claim 5 integrates stretchable flexible nerve electrode, it is characterised in that:

The second polyimide substrate layer with a thickness of 2~10 μm；

The polyimide insulative layer with a thickness of 2~10 μm；

The second polyimides encapsulated layer with a thickness of 2~10 μm.

7. a kind of photoelectricity described in any one of claims 1-6 integrates the preparation method of stretchable flexible nerve electrode, feature It is, comprising:

Light stimulus electrode and recording electrode are prepared respectively, and the stimulating electrode and the recording electrode are all made of serpentine bend wiring Structure guarantees that plain conductor is not up to yield strain critical value during stretching；

The first silicon dioxide layer is deposited in the lower surface of the light stimulus electrode, it will be described in the lower surface of the light stimulus electrode First silicon dioxide layer is transferred in the first elastic substrates, and first silicon dioxide layer contracts with first elastic substrates It closes reaction and generates strong chemical bond, make the light stimulus electrode adhesion on first elastic substrates surface；

One layer of second elastic substrates is prepared on the upper surface of the light stimulus electrode, deposits second in the lower surface of recording electrode Second silicon dioxide layer described in the lower surface of the recording electrode is transferred to the second glue elasticity substrate by silicon dioxide layer On, second silicon dioxide layer and second elastic substrates occur condensation reaction and generate strong chemical bond, make the record electricity Pole is bonded in second elastic substrates surface；Acquisition integrates the light stimulus electrode and the recording electrode integration device.

8. the preparation method that a kind of photoelectricity according to claim 7 integrates stretchable flexible nerve electrode, which is characterized in that It executes according to the following steps:

Step 1: use the first silicon wafer as the support substrate of the light stimulus electrode；Use the second silicon wafer as the recording electrode Support substrate；First silicon wafer and second silicon wafer are cleaned, to first silicon wafer and second silicon after the completion of cleaning Piece is toasted；

Step 2: one layer of metal of thermal evaporation or sputtering is distinguished on first silicon wafer and second silicon wafer, as superstructure Last metallic release layer；

Step 3: on first silicon wafer i.e. the metallic release layer top spin coating and photolithography patterning polyimides glue, Form the first polyimide substrate layer of the light stimulus electrode；I.e. in the upper of the metallic release layer on second silicon wafer Square spin coating and photolithography patterning polyimides glue, form the second polyimide substrate layer of the recording electrode；

Step 4: one layer of chromium is first sputtered above the first polyimide substrate layer as seed on first silicon wafer Layer, then one layer of gold is sputtered as metal layer in layers of chrome, spin coating and photolithography patterning positive photoresist, lead on the metal layer Cross ion beam etching complete the light stimulus electrode metal carbonyl conducting layer it is graphical；It is described second poly- on second silicon wafer One layer of chromium is first sputtered above acid imide substrate layer as seed layer, then in layers of chrome one layer of gold of sputtering as metal layer, by from The metal screen layer that beamlet etching completes the recording electrode is graphical；

Step 5: on first silicon wafer i.e. the metal carbonyl conducting layer top spin coating and photolithography patterning polyimides glue, The the first polyimides encapsulated layer for forming the light stimulus electrode completes the preparation of light stimulus electrode on first silicon wafer； The note is formed in the top spin coating of the metal screen layer and photolithography patterning polyimides glue on second silicon wafer Record the polyimide insulative layer of electrode；

Step 6: the top of the i.e. polyimide insulative layer first sputters one layer of chromium on second silicon wafer, then splashes in layers of chrome It penetrates one layer of gold and forms metal recording layer, spin coating and photolithography patterning positive photoresist on the metal recording layer, finally by The metal recording layer that ion beam etching completes the recording electrode is graphical；

Step 7: it is spin coating and photolithography patterning polyimides glue above the metal recording layer on second silicon wafer, is formed Second polyimides encapsulated layer of the recording electrode completes the preparation of recording electrode on second silicon wafer；

Step 8: being covered each by with dust-free paper or non-dust cloth in the top of first silicon wafer and second silicon wafer, then with difference It is completely covered with the sheet glass of first silicon wafer and the second silicon wafer same diameter size, the institute that will be superimposed later It states the first silicon wafer and sheet glass, second silicon wafer and sheet glass is immersed in hydrochloric acid solution, sacrifice first silicon wafer and institute State the metallic release layer on the second silicon wafer；

Step 9: and then be put into first silicon wafer and sheet glass that are superimposed, second silicon wafer and sheet glass Deionized water impregnates, rinses and dry, and completes the release of the light stimulus electrode and the recording electrode；

Step 10: sticking up the light stimulus electrode using water-soluble adhesive tape from first silicon wafer, make first silicon wafer with The following table of the light stimulus electrode is fixed on substrate, then in the light stimulus by the light stimulus electrode separation up The lower surface of electrode first sputters one layer of titanium, then the first silicon dioxide layer is sputtered on titanium layer；

The recording electrode is sticked up from second silicon wafer using water-soluble adhesive tape, makes second silicon wafer and record electricity Pole separation；The following table of the recording electrode is fixed on substrate up, is then first splashed in the lower surface of the recording electrode One layer of titanium is penetrated, then sputters the second silicon dioxide layer on titanium layer；

Step 11 chooses sheet glass, and one layer of PI glue band of side's covering, is deposited with a strata to diformazan for surface later on the glass sheet The glass slide of benzene is fixed on the sheet glass with the PI glue band, and sprays one layer on Parylene on glass slide Release agent, later on the release agent one layer of super-elasticity silicon rubber of spin coating as the first elastic substrates layer；

Step 12: using the first elastic substrates layer described in UV ultraviolet light, the water of the light stimulus electrode will be stained with again later Soluble gum band is transferred to the first elastic substrates layer surface, and the light stimulus electrode sputtering is made to have the one of the first silicon dioxide layer Face is contacted with the first elastic substrates layer surface, and under certain pressure effect, is placed in baking oven, hot water dissolving is water-soluble later Property adhesive tape；

Step 13: mask alignment is attached on the light stimulus electrode, i.e., the upper surface of the described first polyimides encapsulated layer, It is used to brush conductive silver paste by the metal pad of exposure mask exposure, it is graphical to complete solder on the light stimulus electrode；

Step 14: graphical mold is utilized, reverse mould obtains cavity plate seal, miniature LED chip is fixed in the pit of seal, complete At the transfer of multiple miniature LED chips, miniature LED chip array is formed, baking oven is put into, made described on the light stimulus electrode Conductive silver paste is fully cured and conduction；

Step 15: conductive silver paste is brushed using exposure mask in the tail end of the light stimulus electrode and forms light stimulus electrode interface, is chosen The PI soft arranging wire is directed at the light stimulus electrode interface by PI soft arranging wire under the covering of coverslip, makes the light stimulus electricity The front end of pole interface and the PI soft arranging wire links into an integrated entity device, keeps being put into baking oven under the pressure effect of top；

Step 16: sealant is coated in the light stimulus electrode interface and the PI soft arranging wire join domain, to the entire device Part surface carries out oxygen plasma pretreatment, and after pet film is covered in the PI soft arranging wire End, one layer of super-elasticity silicon rubber of spin coating is as the second elastic substrates layer on entire sheet glass, and opens institute immediately after the spin-coating Pet film is stated, the rear end exposure of the PI soft arranging wire is made；

Step 17: using the second elastic substrates layer described in UV ultraviolet light, the record electricity is stained with by what is prepared in step 10 The water-soluble adhesive tape of pole is directed at position, is transferred to described second on one side for what recording electrode sputtering had the second silicon dioxide layer Elastic substrates layer surface, and under certain pressure effect, it places in baking oven, is subsequently placed into hot water and dissolves water-soluble adhesive tape；

Step 18: the regional area in the recording electrode rear end brushes conductive silver paste using exposure mask, forms recording electrode interface, PI soft arranging wire is chosen again, the PI soft arranging wire is registered to the recording electrode interface under the covering of coverslip, keeps top Under pressure effect, it is put into baking oven；

Step 19: it in the recording electrode interface and the PI soft arranging wire join domain silicone-coating sealant, is cut by laser It cuts the first elastic substrates layer and the second elastic substrates layer obtains the profile of integrated device；

Step 20: entire integrated device is discharged from glass slide, and electrochemical modification is carried out to the electrode points of the integrated device.

9. a kind of photoelectricity according to claim 7 integrates the stretchable preparation method for being electromagnetically shielded flexible nerve electrode, It is characterized in that, in step 2, the metal of the metallic release layer of first silicon wafer and/or second silicon wafer uses aluminium or copper, institute State the metallic release layer of the first silicon wafer and/or second silicon wafer with a thickness of 200~1000nm.

10. a kind of photoelectricity according to claim 7 integrates the preparation method of stretchable flexible nerve electrode, feature exists In, including one or more of feature:

In step 4, first silicon wafer, second silicon wafer the seed layer with a thickness of 10~50nm；First silicon Piece, second silicon wafer the metal layer with a thickness of 100~500nm；

In step 6, the top of the i.e. polyimide insulative layer first sputters one layer of chromium on second silicon wafer, then in layers of chrome It is upper sputtering one layer gold formed metal recording layer, wherein the chromium with a thickness of 10~50nm；The gold with a thickness of 100~ 500nm。

In step 10, one layer of titanium is first sputtered in the lower surface of the light stimulus electrode, then sputters one layer of titanium dioxide on titanium layer Silicon, wherein titanium with a thickness of 3~10nm；Silica with a thickness of 30~100nm；

First sputter one layer of titanium in the lower surface of the recording electrode, then sputter layer of silicon dioxide on titanium layer, titanium with a thickness of 3~10nm；Silica with a thickness of 30~100nm.