CN109713087A - Repair chip method and apparatus - Google Patents
Repair chip method and apparatus Download PDFInfo
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- CN109713087A CN109713087A CN201811460543.6A CN201811460543A CN109713087A CN 109713087 A CN109713087 A CN 109713087A CN 201811460543 A CN201811460543 A CN 201811460543A CN 109713087 A CN109713087 A CN 109713087A
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- 230000008439 repair process Effects 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 242
- 230000002950 deficient Effects 0.000 claims abstract description 87
- 238000012360 testing method Methods 0.000 claims abstract description 15
- 238000012546 transfer Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 18
- 230000007547 defect Effects 0.000 claims description 10
- 238000000608 laser ablation Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000011345 viscous material Substances 0.000 claims description 7
- 238000005411 Van der Waals force Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000008901 benefit Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims 1
- 238000012423 maintenance Methods 0.000 abstract description 24
- 238000009826 distribution Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000001354 calcination Methods 0.000 description 3
- 230000035807 sensation Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
Abstract
The present invention discloses a kind of repair chip method, include the following steps: that test receives substrate, N number of defective chip is detected from the multiple chips being located on a surface for receiving substrate, and obtains the coordinate information of each defective chip, and N is the integer more than or equal to 2；According to the coordinate information of N number of defective chip, N number of defect-free chip is determined as compensation chips from multiple defect-free chips on a surface for being located at output substrate, N number of compensation chips are one-to-one with N number of defective chip；N number of compensation chips batch is transferred to the position of the corresponding defective chip on the reception substrate.Repair chip method of the invention can disposably be repaired for defective chip present on substrate, improve maintenance efficiency.The present invention also provides a kind of repair chip equipment.
Description
Technical field
The present invention relates to repair chip technical fields, the in particular to process and maintenance of equipment of repair chip.
Background technique
By taking Micro LED Display (micro- light emitting diode indicator) as an example, a large amount of Micro LED (micro- luminous two
Pole pipe) chip need from the substrate that support plate is transferred to display screen, in transfer process, inevitably there are some Micro LED chips
Existing defects can not work.Therefore it needs to repair defective chip.Method for maintaining in the prior art is for each
Defective chip carries out individually operated, i.e., first removes a defective chip, then mends and fill a good Micro LED chip replacement and lack
Fall into chip.In a fairly large number of situation of Micro LED chip, this mode of operation efficiency pole for only repairing a chips every time
It is low.
Summary of the invention
In order to overcome defect present in repair chip method in the prior art, the present invention provides one kind and can repair in batches
The method and apparatus of chip.
In a first aspect, a kind of repair chip method provided by the present application, for for the multiple chips received on substrate into
Row maintenance, multiple chips are in array distribution on receiving substrate, and in specific embodiment, receiving substrate can be display screen base
Plate, chip can be the LED chip being arranged on display screen substrate, and the application can be for the defect LED on display screen substrate
It repairs.Repair chip method provided by the present application includes the following steps: that test receives substrate first, from positioned at the reception
N number of defective chip is detected in multiple chips on one surface of substrate, and obtains the coordinate information of each defective chip,
N is the integer more than or equal to 2；Then according to the coordinate information of N number of defective chip, from a table for being located at output substrate
Determine N number of defect-free chip as compensation chips, N number of compensation chips and the N in multiple defect-free chips on face
A defective chip is one-to-one；The corresponding institute finally N number of compensation chips batch being transferred on the reception substrate
State the position of defective chip.
Specifically, first defective chip all can be removed in a kind of embodiment, then batch transfer compensation chips are extremely
The position of corresponding defective chip in another embodiment, can not also remove defective chip, have space beside defective chip
For compensation chips are arranged, this is because not all chips are located next to when making all chips on receiving substrate
Arrangement, but gap is kept between adjacent chip, that is, space has been reserved on the side of every chips, it can be reserved
Compensation chips are set in space.
With reference to first aspect, under the first possible embodiment, wherein " N number of compensation chips and it is described it is N number of lack
Sunken chip is one-to-one " include: each compensation chips on output substrate coordinate information and corresponding defective chip
Coordinate information it is identical, alternatively, coordinate components of each compensation chips in each axial direction being located on the output substrate are
The integral multiple of coordinate components of the corresponding defective chip in same axial.
It should be noted that assuming that coordinate involved in this implementation includes the component of X axis and point of Y-axis
Amount, then the coordinate components of each compensation chips in the X-axis are the coordinate components of the corresponding defective chip in the X-axis
M times, and the coordinate components in Y-axis are N times of the coordinate components of the corresponding defective chip in the X-axis, wherein M with
N is the integer more than or equal to 1.It is worth noting that, M can be equal to N, N can also be not equal to.
Above-mentioned repair chip method is obtained by the batch to defective chip coordinate, to realize the batch of defective chip
Maintenance, is greatly improved the efficiency of repair chip.
With reference to first aspect or the first possible embodiment of first aspect, in second of possible embodiment
In, all compensation chips batches are transferred to the corresponding institute on the reception substrate in the repair chip method
The step of stating the position of defective chip includes: to align the output substrate and the reception substrate, so that the defect-free chip
The surface of the multiple chip is equipped in face of the reception substrate；Using laser lift-off technique, N number of compensation chips are turned
Move to the position of the corresponding defective chip on the reception substrate.Present embodiment passes through laser ablation technology and directly will
Compensation chips transfer on output substrate repairs the defective chip received on substrate, in receiving on substrate by primary
Contraposition and primary batch shift, and have good efficiency.
The possible embodiment of second with reference to first aspect, in the third possible embodiment, described in contraposition
After output substrate and the reception substrate, during laser lift-off, have between the output substrate and the reception substrate
There is gap.Gap is provided with going on smoothly conducive to laser ablation technology, guarantees the quality of chip.Specifically, gap exists
In 10-1000 micron range.
The third possible embodiment with reference to first aspect, in the 4th kind of possible embodiment, the output
Material on substrate for fixing the defect-free chip is sacrificial material layer, when the sacrificial material layer described in the laser irradiation, institute
N number of compensation chips are stated to fall on the reception substrate.
The 4th kind of possible embodiment with reference to first aspect, in the 5th kind of possible embodiment, the reception
The surface of substrate is equipped with layer of adhesive material and directly falls in viscous material layer when compensation chips are fallen on the reception substrate
On, the viscous material layer is for fixing the compensation chips.
The possible embodiment of second with reference to first aspect, in the 6th kind of possible embodiment, in contraposition institute
Before stating output substrate and the reception substrate, locating part is set on the output substrate and/or the reception substrate, it is described
Locating part is for guaranteeing to form the gap between the output substrate and the reception substrate.Present embodiment passes through locating part
It can guarantee gap, so that the process of contraposition, is more easier, do not need by control centre between output substrate and reception substrate
Distance be scanned and measure, directly align, through locating part in a manner of physical separation, the control in gap can be realized, into
One step improves maintenance efficiency.
The 6th kind of possible embodiment with reference to first aspect, in the 7th kind of possible embodiment, the limit
Part is distributed in the output substrate and/or the fringe region for receiving substrate, the fringe region surround the output substrate
And/or for the region of chip to be arranged on the reception substrate.Locating part can be provided separately on output substrate, can also be single
Solely setting is respectively provided with locating part on receiving substrate, or on output substrate and reception substrate, during locating part is arranged,
Need to consider whether the height of locating part can satisfy gap and the position of locating part setting and do not interfere chip to shift.
The 7th kind of possible embodiment with reference to first aspect, in the 8th kind of possible embodiment, the limit
Part is distributed between chip adjacent on the output substrate and/or the reception substrate.
Optionally, by the process of exposure development in the output substrate and/or the surface shape for receiving substrate
At the locating part.I.e. the step of production locating part, can be with the other devices benefit on production output substrate and/or reception substrate
It is completed with same technique.
Optionally, after the completion of maintenance, by way of etching exposure development or laser ablation or mechanical system (such as
Mechanical cutting techniques) the removal locating part, reduce influence of the setting to substrate of locating part.
With reference to first aspect, in the 9th kind of possible embodiment, by all institutes in the repair chip method
The step of stating the position for the corresponding defective chip that compensation chips batch is transferred on the reception substrate includes: offer band
There is the elastomeric stamp of multiple seal terminals, the elastomeric stamp and the output substrate is aligned, and the multiple seal terminal
In N number of seal terminal adsorb N number of compensation chips on the output substrate；By the elastomeric stamp and the reception base
Plate contraposition, and the N number of compensation chips being adsorbed on N number of seal terminal are transferred to the correspondence on the reception substrate
The defective chip position.Present embodiment, by elastomeric stamp as intermediate transfer device by the benefit on output substrate
Chip is repaid to be transferred on reception substrate.The precision of elastomeric stamp is processed by modes such as mold, etchings and be may be implemented, seal terminal
Elastic characteristic be deformation when it can be pressurized, damage chip, seal when can contact to avoid it with chip on output substrate
When terminal and the chip for not needing maintenance position contact, the existing good chip in the position will not be destroyed.
The 9th kind of possible embodiment with reference to first aspect passes through laser in the tenth kind of possible embodiment
The N number of compensation chips being selected on the output substrate are transferred to the corresponding N number of seal end of coordinate by lift-off technology
On son.
The 9th kind of possible embodiment with reference to first aspect, it is described N number of in a kind of the tenth possible embodiment
Seal terminal adsorbs N number of compensation chips by the way of electrostatic force or magnetic force or Van der Waals force or bonding force.Electrostatic force
Pass through the switch control of control circuit, Van der Waals force and bonding force with magnetic force by receiving the viscous of the adhesives on substrate
Relay realizes, the bonding force for receiving substrate bonding material and chip is greater than the bonding force of chip and elastomeric stamp interface.
The 9th kind of possible embodiment with reference to first aspect, in the 12nd kind of possible embodiment, the bullet
Property seal be equipped with heating member, the elastomeric stamp is heated by the heating member, so that the N on N number of seal terminal
A compensation chips are transferred to the position at the corresponding defective chip on the reception substrate.
The 12nd kind of possible embodiment with reference to first aspect, it is described in the 13rd kind of possible embodiment
Heating device and the seal terminal are located at the opposite two sides of the elastomeric stamp.
Second aspect, the present invention provides the equipment that one kind can in high volume repair chip, the repair chip equipment packets
Test device, contraposition and transfer device: test device are included, for testing the reception substrate, and obtains institute in N number of chip
The coordinate information of some defective chips；Contraposition and transfer device, for according to N number of defective chip on the reception substrate
Coordinate information, determine that N number of defect-free chip is made from multiple defect-free chips on a surface for being located at output substrate
For compensation chips, and the corresponding defective chip N number of compensation chips batch being transferred on the reception substrate
Position.
In conjunction with second aspect, in the first possible embodiment, the contraposition and transfer device include mobile device
With laser lift-off module, the contraposition and transfer device include mobile device and laser lift-off module, the laser lift-off module
N number of compensation chips corresponding to the coordinate information are made to fall off from output substrate by the technique of laser ablation；It is described
Mobile device is used for output substrate and receives substrate contraposition and movement.
In conjunction with second aspect, in second of possible embodiment, the contraposition and transfer device include laser lift-off
Device, mobile device and elastomeric stamp, the elastomeric stamp include multiple seal terminals, and the multiple seal terminal is for adsorbing
N number of compensation chips on the output substrate；The laser lift-off module makes the coordinate by the technique of laser ablation
N number of compensation chips corresponding to information fall off from output substrate；The mobile device is for the elastomeric stamp, described
Output substrate and the contraposition and movement for receiving substrate.
Repair chip method provided by the invention finds out the core of existing defects on substrate by detecting to the reception substrate
Piece carries out batch maintenance, to increase substantially the efficiency of maintenance then according to the coordinate information of numerous defective chips.
Detailed description of the invention
Fig. 1 is the flow chart of repair chip in one embodiment of the invention；
Fig. 2 is the top view that the present invention receives substrate；
Fig. 3 is the top view of output substrate of the present invention；
Fig. 4 is that compensation chips are transferred to the flow diagram for receiving substrate in one embodiment of the invention；
Fig. 5 is the schematic diagram of output substrate and reception substrate contraposition in one embodiment of the invention；
Fig. 6 is a kind of distribution schematic diagram of locating part of the present invention；
Fig. 7 is another distribution schematic diagram of locating part of the present invention；
Fig. 8 is the schematic diagram of laser lift-off in one embodiment of the invention；
Fig. 9 is that compensation chips are transferred to the flow diagram for receiving substrate in another embodiment of the present invention；
Figure 10 is the schematic diagram of output substrate and elastomeric stamp contraposition in another embodiment of the present invention；
Figure 11 is the top view of elastomeric stamp of the present invention；
Figure 12 is the schematic diagram of elastomeric stamp and reception substrate contraposition in another embodiment of the present invention；
Figure 13 is the applied environment figure of repair chip in one embodiment of the invention；
Figure 14 is the equipment schematic diagram of contraposition and transfer device in one embodiment of the invention；
Figure 15 is the equipment schematic diagram of contraposition and transfer device in another embodiment of the present invention.
Specific embodiment
Below in conjunction with attached drawing, the specific embodiment of the application is explicitly described.
In one embodiment, as shown in connection with fig. 1, a kind of repair chip method provided by the present application includes the following steps.
S100, test receive substrate, detect from the multiple chips being located on a surface for receiving substrate N number of
Defective chip, and the coordinate information of each defective chip is obtained, N is the integer more than or equal to 2.
It is worth noting that, defective chip refers to the chip of existing defects, or refer to the chip of cisco unity malfunction.With
Relative to be defect-free chip, so-called defect-free chip refers to the chip there is no defect, or refers to normal
The chip of work.
S200, multiple nothings according to the coordinate information of N number of defective chip, from a surface for being located at output substrate
Determine N number of defect-free chip as compensation chips, N number of compensation chips and N number of defect core in defective chip
Piece is one-to-one.
N number of compensation chips batch is transferred to the corresponding defective chip on the reception substrate by S300
Position.
Wherein " N number of compensation chips and N number of defective chip are one-to-one " includes: the seat of each compensation chips
Mark is identical as the coordinate of corresponding defective chip, alternatively, each axial coordinate component of each compensation chips is corresponding defect
The integral multiple of the same axial coordinate components of chip.It should be noted that assuming that coordinate involved in this implementation includes X
The component of axial component and Y-axis, then the coordinate components of each compensation chips in the X-axis are the corresponding defective chip
M times of coordinate components in the X-axis, and the coordinate components in Y-axis be the corresponding defective chip in the X-axis
N times of coordinate components, wherein M and N is the integer more than or equal to 1.It is worth noting that, M can be equal to N, it can also not
Equal to N.
As shown in Fig. 2, receiving substrate 106 can be display screen substrate, chip can be to be arranged on display screen substrate
LED chip, LED chip are distributed in matrix and receive on substrate 106, by test, can obtain wherein defective chip 1062
Specific coordinate information.For example, the coordinate information for receiving four defective chips 1062 on substrate 106 in Fig. 2 is respectively as follows: 6R6C
(the corresponding position of the 6th row the 6th column), 10R3C (the corresponding position of the 10th row the 3rd column), (the 13rd row the 6th column institute is right by 13R6C
The position answered) and 18R8C (the corresponding position of the 18th row the 8th column).
As shown in figure 3, output substrate 202 is equipped with multiple defect-free chips 2022 of array distribution.In order to ensure laser
Going on smoothly for removing, needs the spacing to the defect-free chip 2022 of array distribution to limit, and makes to receive core on substrate 106
The spacing of piece is identical with the spacing of defect-free chip 2022 on output substrate 202 or its integral multiple.It later will be at these
Suitable compensation chips 2024 are picked out in defect-free chip, according to the defective chip 1062 on the reception substrate 106
Coordinate information, select the defect-free chip 2022 of designated position as compensation chips on the output substrate 202
2024." spacing of the defect-free chip 2022 of array distribution " specifically refers to the centre bit of two adjacent defect-free chips 2022
The distance between set, specifically, if each defect-free chip 2022 includes multiple pins, defect-free chip 2022 and output substrate
It is attached between 202 by multiple pins, then, " spacing of the defect-free chip 2022 of array distribution " is each zero defect core
The pin center of piece 2022 (can be for positioned at the central point of the pin of center or all pin distributed areas
Central point) between spacing.
In Fig. 3, by four specified compensation chips 2024 of the coordinate information of defective chip 1062 on output substrate 202
Coordinate information be respectively as follows: 6R6C (the 6th row the 6th column corresponding position), 10R3C (the corresponding position of the 10th row the 3rd column),
13R6C (the corresponding position of the 13rd row the 6th column) and 18R8C (the corresponding position of the 18th row the 8th column).
In a kind of repair chip method provided by the present application, specifically, first can all remove defective chip 1062,
Batch transfer compensation chips 2024 in another embodiment, can not also be removed to the position of corresponding defective chip 1062 again
Defective chip 1062, the side of defective chip 1062 have space for compensation chips 2024 are arranged, this is because receiving substrate 106
When all chips of upper production, not by all chips next to arrangement, but gap is kept between adjacent chip,
That is, having reserved space on the side of every chips, compensation chips 2024 can be set in reserved space.
The method for maintaining of said chip selectes maintenance chip by the location information of defective chip, and disposably will maintenance
Chip is shifted, and achievees the purpose that batch repairs.Method for maintaining compared with the prior art, the batch maintenance side that the present invention takes
Formula greatly improves the efficiency of repair chip.
In one embodiment, as shown in figure 4, all compensation chips batches are transferred on the reception substrate
The corresponding defective chip position the step of include:
Step 311, the output substrate and the reception substrate are aligned, so that the defect-free chip faces the reception
Substrate is equipped with the surface of the multiple chip；
Step 312, using laser lift-off technique, N number of compensation chips are transferred to the correspondence on the reception substrate
The defective chip position.
Through the above steps 411 and step 412, it can be disposably at the position of all defective chips to need repairing
Fill up compensation chips, can also be completed by way of repeat the above steps 411 and step 412 it is all need repairing lack
It falls at the position of chip and fills up compensation chips.Concrete operations are illustrated below: contraposition output substrate and reception substrate for the first time,
And after completing transfer compensation chips to defective chip position, it only displaced part compensation chips, next, passing through mobile output base
Plate or the mode for receiving substrate further align, complete the transfer of remaining compensation chips.
Specifically, output substrate 202 is aligned with substrate 106 is received, make the defect-free chip on output substrate 202
(as shown in connection with fig. 2, Fig. 4 expression is a section to 2022 defective chip 1062 on reception substrate 106, in order to facilitate table
Reach, 1062 position of defective chip is sky, and Fig. 4 do not illustrate defective chip) surface.As shown in Figures 2 and 3, output substrate 202
With receive substrate 106 above chip be same array distribution form, therefore, on output substrate 202 with receive substrate 106
On chip be in one-to-one state.Using each compensation chips 2024 of the laser alignment of laser lift-off module 4118, so that
Compensation chips 2024 are detached from output substrate 202, fall to and receive on substrate 106 at the position of defective chip, i.e. last in Fig. 4
One step, so far, the present embodiment maintenance are completed.
In a particular embodiment, if output substrate corresponding with 1062 position of defective chip occurs during laser lift-off
The situation that compensation chips 2024 on 202 lack fast moves output base then after the completion of shifting to other compensation chips 2024
Plate 202 receives substrate, then selects defect-free chip 2022 to carry out contraposition and laser lift-off operation on output substrate, thus complete
At repair chip.
As shown in figure 5, the progress in order to guarantee laser lift-off process after contraposition, when contraposition, need to guarantee output substrate
There is gap 4115 between 202 and reception substrate 106.The range in gap 4115 is 10-1000 microns.In order to guarantee gap 4115
Formation, locating part 4114 can be distributed on receiving substrate 106 and/or output substrate 202.The work ruler of the locating part 4114
The very little height by chip on output substrate 202 and reception substrate 106 determines: the working depth of locating part 4114 is H, receives substrate
The standard value of 1068 height of normal chip is a, tolerance a1, the mark of 2024 height of compensation chips on output substrate 202 on 106
Quasi- value b, tolerance b1, then (wherein c is positive produces chip 1068 and compensation chips to working depth H >=a+b+c of locating part 4114
The sum of the tolerance of 2024 height, c >=a1+b1+d, d here are constant, as the case may be the value in 0~100 micron).
Wherein the working size H of locating part 4114 refers to its size on the direction perpendicular to real estate, the height of normal chip 1068
Degree refers to it perpendicular to the size received on 106 direction of substrate, and the height of compensation chips 2024 refers to perpendicular to output substrate 202
Size on the direction on the surface of chip is set.
It should be noted that all pass through in output base in the application there are many specific distribution modes of locating part 4114
Plate 202 and/or the situation for receiving distribution locating part 4114 on substrate 106 are all utilized locating part 4114 and guarantee gap 4115
Principle, thus using the principle and output substrate 202 and/or receive substrate 106 on be distributed locating part 4114 situation, regardless of
How locating part 4114 is distributed, and belongs to protection scope of the present invention, and the application is only by taking two specific distribution modes as an example, to limit
The position distribution of position part 4114 is illustrated.
As shown in fig. 6, locating part 4114 is distributed in output substrate 202 and/or receives edge region on substrate 106,
The fringe region safeguards output substrate 202 or receives the region that chip is arranged on substrate 106, and specific location can be selected according to layout
It takes.
As shown in fig. 7, in the particular embodiment, locating part 4114, which is distributed in, states output substrate 202 and/or reception substrate
On 106 between adjacent chip.
In the particular embodiment, in order to guarantee that locating part 4114 will not have an impact repair chip, locating part 4114
It is formed by the processing method of exposure development on the surface of output substrate 202 and/or reception substrate 106, after the completion of maintenance, is passed through
The mode or laser ablation or mechanical system (such as mode of machine cuts) of exposure development remove.
Specifically, as shown in figure 8, by laser lift-off module 4118 to the face back to distribution chip of output substrate 202
Board position is burnt, allow burn multiple compensation chips 2024 on position fall to receive substrate 106 on defective chip 1062
Position on.In a particular embodiment, for the ease of the operation of laser lift-off module 4118, for fixing on output substrate 202
The material of the multiple defect-free chip 2022 is sacrificial material layer 2026, when laser irradiation sacrificial material layer 2026, compensation
Chip 2024, which is fallen to, to be received on substrate 106.In the particular embodiment, the surface for receiving substrate 106 is equipped with layer of adhesive material
1066, viscous material layer 1066 is for the fixed compensation chips 2024 fallen by laser lift-off operation.
In the particular embodiment, for the ease of the operation of laser lift-off module 4118, the substrate 2028 of output substrate 202
It can pass through material by laser to be made.
In another embodiment, as shown in figure 9, all compensation chips batches are transferred to the reception substrate
On the corresponding defective chip position the step of include:
Step 321, the elastomeric stamp with multiple seal terminals is provided, by the elastomeric stamp and the output substrate pair
Position, and N number of seal terminal in the multiple seal terminal adsorbs N number of compensation chips on the output substrate；
Step 322, the elastomeric stamp and the reception substrate are aligned, and will be adsorbed on N number of seal terminal
N number of compensation chips be transferred to it is described reception substrate on the corresponding defective chip position.
Specifically, aligning elastomeric stamp 4212 and output substrate 202 such as Fig. 9 and 10, seal terminal 4214 is allowed to inhale
Compensation chips 2024 on attached corresponding output substrate 202, while laser lift-off module 4118 on output substrate 202 to compensating
2024 position of chip carries out calcination, by the compensation chips 2024 of calcination position because calcination falls off, the compensation chips 2024 that fall off because
The suction-operated of seal terminal 4214 and be transferred on elastomeric stamp 4212.
Specifically, as shown in figure 9, guaranteeing elasticity during elastomeric stamp 4212 and reception substrate 106 are aligned
The compensation chips 2024 adsorbed on seal 4212 are located at the surface for receiving 1062 position of defective chip on substrate 106, have aligned
Cheng Hou, moving down elastomeric stamp 4212 makes compensation chips 2024 and receives to correspond to defective chip position on substrate 106 and contact, by opening
It closes and eliminates seal terminal 4214 to the electrostatic force or magnetic-adsorption power of compensation chips 2024, remove elastomeric stamp 4212
Complete the maintenance work of chip；In another embodiment, layer of adhesive material 1066, viscous material layer are equipped with receiving substrate surface
1066 are greater than the Van der Waals force or bonding force of elastomeric stamp 4212 and compensation chips 2024 with the bonding force of chip, remove elastic print
Chapter 4212 can be at the maintenance work of chip.
In a particular embodiment, as shown in figure 11, in the one side of elastomeric stamp 4212 array distribution seal terminal 4214,
Seal terminal 4214 is distributed on elastomeric stamp 4212 according to the arrangement mode array for receiving chip on substrate 106.
In a particular embodiment, in order to make the compensation chips 2024 to fall off by 4214 absorption migrations of seal terminal, seal
Terminal 4214 can generate the compensation chips 2024 being in contact with it using modes such as electrostatic force, magnetic force, Van der Waals force, bonding forces
Adsorption effect.
In a particular embodiment, in order to guarantee elastomeric stamp 4212 and receive the contraposition cooperation between substrate 106, elasticity prints
Chapter 4212 may be selected that the material of deformation, such as dimethyl silicone polymer, polyimides；It is distributed on elastomeric stamp 4212
The size on 4214 surface of seal terminal is preferably lower than or equal to receive the size on the corresponding surface of substrate 202.
In a particular embodiment, as shown in figure 12, in order to guarantee elastomeric stamp 4212 and receive substrate 106 between contraposition
Cooperating, the height h of seal terminal 4214 is determined by the height of normal chip 1068 in compensation chips 2024 and reception substrate 106,
The standard value of 2024 height of compensation chips is a, and tolerance is a1, and receiving 1068 Height Standard value of normal chip on substrate 106 is b,
(wherein c is 4214 height of normal chip 1068 and seal terminal, tolerance by tolerance b1,4214 height h >=b-a+c of seal terminal
Sum, c >=a1+b1+d, d are constant, as the case may be value in the range of 0~100 micron).Wherein seal terminal
Direction where 4212 height h is identical as the thickness direction of elastomeric stamp 4212, the side where the height of compensation chips 2024
To, the thickness in direction and reception substrate 106 height of normal chip 1068 where identical as the thickness direction of substrate 202 is received
Direction is identical.
In a particular embodiment, it is received on substrate 106 to guarantee not interfering seal terminal 4214 in non-transfer process
Other positions chip or component, then the length for being transferred chip is a1, and width is b1 (it is appreciated that the various being transferred chip position
In seal terminal 4214 towards on the end face for receiving substrate 106), it receives on substrate 106 for placing the region for being transferred chip
Length be a2, width b2, wherein a1 value in a2-10um to a2+10um, b1 take in b2-10um to b2+10um
Value.
In a particular embodiment, as shown in figure 12,106 position of substrate is received in order to guarantee that compensation chips 2024 are fixed on,
The prefabricated viscous material layer 1066 on receiving surface of the substrate 106 in face of elastomeric stamp 4212.
Step 422 is carried out with the specific embodiment that seal terminal 4214 generates bonding force to compensation chips 2024 below
It illustrates: such as Figure 12, being provided with heating device 4218 on the surface opposite with seal terminal 4214 on elastomeric stamp 4212,
In seal terminal 4214 by viscosity thermal sensation material prefabricated in the one side contacted with compensation chips 2024, heating device 4218 passes through control
Temperature processed controls the state of sticky thermal sensation material, when needing to eliminate seal terminal 4214 to the adsorption capacity of compensation chips 2024
When, temperature is changed by heating device 4218, sticky thermal sensation material is allowed to undergo phase transition, so that seal terminal 4214 be allowed to lose absorption
Power reduces adsorption capacity, when the bonding force of viscous material layer 1066 and chip is greater than elastomeric stamp 4212 and compensation chips 2024
When bonding force, removing elastomeric stamp 4212 can be at the maintenance work of chip.
On the other hand, the present invention provides the repair chip equipment for said chip method for maintaining, batch for chip
Amount maintenance.
As shown in figure 13, and combine front diagram and explanation, repair chip equipment provided by the present application include contraposition and
Transfer device 4112 and test device 104.Test device 104 receives substrate 106 for testing, and obtains in multiple chips and own
Defective chip 1062 coordinate information.Contraposition and transfer device 4112 are used for according to the defective chip received on substrate 106
1062 coordinate information selects the defect-free chip 2022 of designated position as compensation chips 2024 on output substrate 202, and
All 2024 batch transfer movements of compensation chips are received to the position of the corresponding defective chip 1062 on substrate 106.
In a particular embodiment, repair chip equipment is controlled by control centre 102, the control test of control centre 102
Device 104 is detected to substrate 106 is received, and obtains receiving the coordinate letter on substrate 106 in relation to defective chip 1062 after detection
Coordinate information is fed back to control centre 102 by breath, test device 104, and control centre 102 passes through control pair according to coordinate information
2024 batch of compensation chips is transferred to the position for receiving defective chip 1062 on substrate 106 by position and transfer device 4112, is completed
The batch of chip repairs.
As shown in figure 14, in a particular embodiment, contraposition and transfer device 4112 include laser lift-off module 4118 and move
Dynamic device 4116, laser lift-off module 4118 by the technique of laser ablation make compensation chips 2024 corresponding to coordinate information from
It falls off on output substrate 202；Mobile device 4116 is used for output substrate 202 and receives the contraposition of substrate 106 and movement.
As shown in figure 15, in a particular embodiment, contraposition and transfer device 4112 include laser lift-off device 4118, movement
Device 4116 and elastomeric stamp 4212, elastomeric stamp 4212 include multiple seal terminals 4214, and multiple seal terminals 4214 are used for
Compensation chips 2024 on the corresponding output substrate 202 of absorption；Laser lift-off module 4118 is made by the technique of laser ablation
Compensation chips 2024 corresponding to coordinate information fall off from output substrate 202；Mobile device 4116 is before this for mobile elasticity
Seal 4212, so that elastomeric stamp 4212 and output substrate 202 align so that multiple seal terminals 4214 are corresponding for adsorbing
Output substrate 202 on compensation chips 2024, later mobile device 4116 be also used to movement is adsorbed with compensation chips 2024
Elastomeric stamp 4212, so that elastomeric stamp 4212 and reception substrate 106 align, elastomeric stamp is shifted in completion to be repaired.
Existing method is compared, the repair chip method of the application can greatly promote maintenance efficiency, production cost is saved,
It is illustrated by taking 5.9 cun of full HD Mobile phone screens (1920*1080) as an example below, if the yields of LED chip is on mobile phone screen
99.99%, then on 5.9 cun of full HD Mobile phone screens bad chip quantity be 1980*1080*3*0.01%, i.e., 622, if
It uses conventional methods, once carries out transfer maintenance only for a chip, once-through operation is 10 seconds, then needs 6220 altogether
Second, about 100 minutes, efficiency was unable to satisfy the demand of large-scale production.And the repair chip method of the application is used, it is spent
Time is mainly the time of laser lift-off and contraposition, and according to normal level, the laser lift-off operating time for each chip is
15 is delicate, and to the time that the operations such as bit transition are spent, it is for batch maintenance service, so dividing the maintenance of each chip equally
Time is to can control that (this maintenance time can increase with the number for the bad chip that each batch repairs within 0.5 second
And reduce), then 5.9 cun of full HD mobile phone screens for being 99.99% for chip yields, maintenance time 622*0.5, i.e.,
311 seconds, about 5 minutes, by comparison it can be found that the time that the repair chip scheme of the application is spent only accounts for the two of original technology
1/10th, therefore the method and apparatus of repair chip greatly changes compared to having for existing technical solution in the application
Into huge commercial value can be brought.
Claims (17)
1. a kind of repair chip method characterized by comprising
Test receives substrate, detects N number of defective chip from the multiple chips being located on a surface for receiving substrate,
And the coordinate information of each defective chip is obtained, N is the integer more than or equal to 2；
Multiple defect-free chips according to the coordinate information of N number of defective chip, from a surface for being located at output substrate
In determine N number of defect-free chip as compensation chips, N number of compensation chips and N number of defective chip are a pair of
One；
N number of compensation chips batch is transferred to the position of the corresponding defective chip on the reception substrate.
2. repair chip method as described in claim 1, which is characterized in that each benefit on the output substrate
The coordinate information for repaying chip is identical as the coordinate information of the corresponding defective chip, alternatively, being located on the output substrate
Coordinate components of each compensation chips in each axial direction are coordinate of the corresponding defective chip in same axial
The integral multiple of component.
3. repair chip method as claimed in claim 1 or 2, which is characterized in that N number of compensation chips batch to be transferred to
The step of position of the corresponding defective chip on the reception substrate includes:
The output substrate and the reception substrate are aligned, so that the defect-free chip is equipped with institute in face of the reception substrate
State the surface of multiple chips；
Using laser lift-off technique, N number of compensation chips are transferred to the corresponding defect core on the reception substrate
The position of piece.
4. repair chip method as claimed in claim 3, which is characterized in that align the output substrate and the reception substrate
Afterwards, during laser lift-off, there is gap between the output substrate and the reception substrate.
5. repair chip method as claimed in claim 4, which is characterized in that for solid on a surface of the output substrate
The material of fixed the multiple defect-free chip is sacrificial material layer, when the sacrificial material layer described in the laser irradiation, the compensation core
Piece is fallen on the reception substrate.
6. repair chip method as claimed in claim 5, which is characterized in that the surface for receiving substrate is equipped with adhesives
Layer, the viscous material layer is for fixing the compensation chips.
7. repair chip method as claimed in claim 3, which is characterized in that aligning the output substrate and the reception base
Before plate, locating part is set on the output substrate and/or the reception substrate, and the locating part is for guaranteeing the output
The gap is formed between substrate and the reception substrate.
8. repair chip method as claimed in claim 7, which is characterized in that the locating part is distributed in the output substrate
And/or the fringe region for receiving substrate, the fringe region are surrounded on the output substrate and/or the reception substrate and are used
In the region of setting chip.
9. repair chip method as claimed in claim 8, which is characterized in that the locating part is distributed in the output substrate
And/or it described receives on substrate between adjacent chip.
10. repair chip method as described in claim 1, which is characterized in that N number of compensation chips batch is transferred to institute
State receive substrate on the corresponding defective chip position the step of include:
The elastomeric stamp for having multiple seal terminals is provided, the elastomeric stamp and the output substrate are aligned, and described more
N number of seal terminal in a seal terminal adsorbs N number of compensation chips on the output substrate；
The elastomeric stamp and the reception substrate are aligned, and N number of compensation on N number of seal terminal will be adsorbed on
Chip is transferred to the position of the corresponding defective chip on the reception substrate.
11. repair chip method as claimed in claim 10, which is characterized in that by laser lift-off technique by the output base
The N number of compensation chips being selected on plate are transferred on the corresponding N number of seal terminal of coordinate.
12. repair chip method as claimed in claim 10, which is characterized in that N number of seal terminal using electrostatic force or
The mode of magnetic force or Van der Waals force or bonding force adsorbs N number of compensation chips.
13. repair chip method as claimed in claim 10, which is characterized in that the elastomeric stamp is equipped with heating member, passes through
The heating member heats the elastomeric stamp, so that N number of compensation chips on N number of seal terminal are shifted and are bonded to
The position at the corresponding defective chip on the reception substrate.
14. repair chip method as claimed in claim 13, which is characterized in that the heating device and the seal terminal point
Not Wei Yu the elastomeric stamp opposite two sides.
15. a kind of repair chip equipment, which is characterized in that the repair chip equipment includes:
Test device, for testing the reception substrate, from the multiple chips being located on a surface for receiving substrate
It detects N number of defective chip, and obtains the coordinate information of each defective chip, N is the integer more than or equal to 2；
Contraposition and transfer device, it is defeated from being located at for the coordinate information according to N number of defective chip on the reception substrate
Determine that N number of defect-free chip, and will as compensation chips in multiple defect-free chips on a surface of substrate out
N number of compensation chips batch is transferred to the position of the corresponding defective chip on the reception substrate.
16. repair chip equipment as claimed in claim 15, which is characterized in that the contraposition and transfer device include mobile dress
Set is made described corresponding to the coordinate information with laser lift-off module, the laser lift-off module by the technique of laser ablation
N number of compensation chips fall off from output substrate；The mobile device is used for output substrate and receives substrate contraposition and movement.
17. repair chip equipment as claimed in claim 15, which is characterized in that it is described contraposition and transfer device include laser stripping
From device, mobile device and elastomeric stamp, the elastomeric stamp includes multiple seal terminals, and the multiple seal terminal is for inhaling
N number of compensation chips on the attached output substrate；The laser lift-off module makes the seat by the technique of laser ablation
N number of compensation chips corresponding to mark information fall off from output substrate；The mobile device is used for the elastomeric stamp, institute
It states output substrate and receives the contraposition and movement of substrate.
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| CN2018111288862 | 2018-09-27 | ||
| CN201811128886 | 2018-09-27 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054105A (en) * | 2019-06-06 | 2020-12-08 | 錼创显示科技股份有限公司 | Method for manufacturing micro light-emitting diode display |
| JP2021051167A (en) * | 2019-09-24 | 2021-04-01 | 株式会社ジャパンディスプレイ | Repair method for display device |
| WO2021062786A1 (en) * | 2019-09-30 | 2021-04-08 | 重庆康佳光电技术研究院有限公司 | Led mass transfer method and apparatus |
| CN113451274A (en) * | 2020-10-28 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | LED chip assembly, display panel and preparation method |
| WO2021196310A1 (en) * | 2020-04-03 | 2021-10-07 | Tcl华星光电技术有限公司 | Repairing apparatus for display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719592A (en) * | 2004-07-09 | 2006-01-11 | 日月光半导体制造股份有限公司 | Method for remeasuring semiconductor elements |
| US20100003786A1 (en) * | 2008-07-01 | 2010-01-07 | International Business Machines Corporation | Chip-level underfill process and structures thereof |
| CN105575833A (en) * | 2015-12-28 | 2016-05-11 | 华中科技大学 | Back bonding control method suitable for efficient chip transfer |
| CN106684022A (en) * | 2016-12-28 | 2017-05-17 | 华中科技大学 | High-speed turret symmetrical arrangement mounting system facing flexible electronic manufacturing |
-
2018
- 2018-12-01 CN CN201811460543.6A patent/CN109713087B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1719592A (en) * | 2004-07-09 | 2006-01-11 | 日月光半导体制造股份有限公司 | Method for remeasuring semiconductor elements |
| US20100003786A1 (en) * | 2008-07-01 | 2010-01-07 | International Business Machines Corporation | Chip-level underfill process and structures thereof |
| CN105575833A (en) * | 2015-12-28 | 2016-05-11 | 华中科技大学 | Back bonding control method suitable for efficient chip transfer |
| CN106684022A (en) * | 2016-12-28 | 2017-05-17 | 华中科技大学 | High-speed turret symmetrical arrangement mounting system facing flexible electronic manufacturing |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112054105A (en) * | 2019-06-06 | 2020-12-08 | 錼创显示科技股份有限公司 | Method for manufacturing micro light-emitting diode display |
| JP2021051167A (en) * | 2019-09-24 | 2021-04-01 | 株式会社ジャパンディスプレイ | Repair method for display device |
| JP7300949B2 (en) | 2019-09-24 | 2023-06-30 | 株式会社ジャパンディスプレイ | Display device repair method |
| WO2021062786A1 (en) * | 2019-09-30 | 2021-04-08 | 重庆康佳光电技术研究院有限公司 | Led mass transfer method and apparatus |
| WO2021196310A1 (en) * | 2020-04-03 | 2021-10-07 | Tcl华星光电技术有限公司 | Repairing apparatus for display panel |
| CN113451274A (en) * | 2020-10-28 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | LED chip assembly, display panel and preparation method |
| CN113451274B (en) * | 2020-10-28 | 2022-08-05 | 重庆康佳光电技术研究院有限公司 | LED chip assembly, display panel and preparation method |
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