CN109712666A - A kind of memory test draws the circuit of inclined memory supply voltage - Google Patents
A kind of memory test draws the circuit of inclined memory supply voltage Download PDFInfo
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- CN109712666A CN109712666A CN201811606250.4A CN201811606250A CN109712666A CN 109712666 A CN109712666 A CN 109712666A CN 201811606250 A CN201811606250 A CN 201811606250A CN 109712666 A CN109712666 A CN 109712666A
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- memory
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Abstract
The embodiment of the invention discloses the circuits that a kind of memory test draws inclined memory supply voltage, include: power IC, power IC output pin are memory supply voltage end by inductance output, power IC feedback voltage pin is connect by first resistor with memory supply voltage end, and power IC feedback voltage pin is connect by second resistance with ground terminal；Ground terminal is connect by capacitor with memory supply voltage end, second resistance both ends parallel connection variable resistance.The embodiment of the present invention can realize that the drawing of memory vdd voltage is inclined by adjusting the resistance value of variable resistance, solve memory vdd voltage in test at present and draw the status for relying only on and realizing by modification BIOS partially.
Description
Technical field
The present invention relates to memory test fields.
Background technique
Critical component of the memory as server needs to carry out drawing inclined survey to memory supply voltage VDD in memory test
Examination, verifies edge (margin) performance of memory.Current being achieved in that is arranged by BIOS.Form is relatively simple, right
The dependence of BIOS is relatively high.
Summary of the invention
The present invention is to solve the technical issues of above-mentioned realization memory supply voltage draws inclined function.For this purpose, the present invention provides one
Kind memory test draws the circuit of inclined memory supply voltage, it can realize memory vdd voltage by adjusting the resistance value of variable resistance
Memory vdd voltage in solving to test at present partially is drawn to draw the status for relying only on and realizing by modification BIOS partially.
To achieve the goals above, the present invention adopts the following technical scheme that.
The embodiment of the present invention provides the circuit that a kind of memory test draws inclined memory supply voltage, includes:
Power IC, power IC output pin are memory supply voltage end by inductance output,
Power IC feedback voltage pin is connect by first resistor with memory supply voltage end, power IC
Feedback voltage pin is connect by second resistance with ground terminal.Ground terminal is connect by capacitor with memory supply voltage end, second resistance
Both ends parallel connection variable resistance.
Preferably, 10 times bigger than the resistance value of second resistance of the maximum value of variable resistance or more.
Preferably, capacitor both ends are parallel with voltage display device.
According to circuit theory, memory supply voltagePass through
The voltage value for changing memory supply voltage VDD may be implemented in the value for adjusting R3.The maximum value of variable resistance R3 is needed than R2's
Big 10 times of resistance value or more, it is ensured that the value of value after R2//R3 close to R2.
Beneficial effects of the present invention: it can realize that the drawing of memory vdd voltage is inclined by adjusting the resistance value of variable resistance, solve mesh
Memory vdd voltage draws the status for relying only on and realizing by modification BIOS partially in preceding test.
Detailed description of the invention
Fig. 1 is embodiment circuit connection diagram.
In figure, A. output pin, FB. feedback voltage pin, C. capacitor, VDD. memory supply voltage, R1. first resistor,
R2. second resistance, R3. variable resistance, L. inductance, E. voltage display device, IC. power IC.
Specific embodiment
The invention will be further described with embodiment with reference to the accompanying drawing.
As shown in Figure 1, a kind of memory test draws the circuit of inclined memory supply voltage, include:
Power IC IC, power IC output pin A are memory supply voltage end VDD by inductance L output,
Power IC IC feedback voltage pin FB is connect by first resistor R1 with memory supply voltage end VDD, electricity
Source integrated circuit feedback voltage pin FB is connect by second resistance R2 with ground terminal.Ground terminal passes through capacitor C and memory supply voltage
Hold VDD connection, second resistance R2 both ends parallel connection variable resistance R3.
The maximum value of variable resistance R3 is 10 times bigger than the resistance value of second resistance R2.
Capacitor both ends are parallel with voltage display device, and voltage display device is voltmeter in the present embodiment.
Above-mentioned, although the foregoing specific embodiments of the present invention is described with reference to the accompanying drawings, not protects model to the present invention
The limitation enclosed, those skilled in the art should understand that, based on the technical solutions of the present invention, those skilled in the art are not
Need to make the creative labor the various modifications or changes that can be made still within protection scope of the present invention.
Claims (3)
1. a kind of memory test draw the circuit of inclined memory supply voltage, characterized by comprising:
Power IC, power IC output pin are memory supply voltage end by inductance output,
Power IC feedback voltage pin is connect by first resistor with memory supply voltage end, power IC feedback
Voltage pin is connect by second resistance with ground terminal；Ground terminal is connect by capacitor with memory supply voltage end, second resistance both ends
Variable resistance in parallel.
2. the circuit that memory test as described in claim 1 draws inclined memory supply voltage, which is characterized in that the variable resistance
10 times bigger than the resistance value of second resistance of maximum value or more.
3. the circuit that memory test as described in claim 1 draws inclined memory supply voltage, which is characterized in that the capacitor both ends
It is parallel with voltage display device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811606250.4A CN109712666A (en) | 2018-12-27 | 2018-12-27 | A kind of memory test draws the circuit of inclined memory supply voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811606250.4A CN109712666A (en) | 2018-12-27 | 2018-12-27 | A kind of memory test draws the circuit of inclined memory supply voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109712666A true CN109712666A (en) | 2019-05-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811606250.4A Pending CN109712666A (en) | 2018-12-27 | 2018-12-27 | A kind of memory test draws the circuit of inclined memory supply voltage |
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Citations (7)
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| KR20120058818A (en) * | 2010-11-30 | 2012-06-08 | 엘지이노텍 주식회사 | Circuit for preventing thermal damage of power IC, and power IC system using thereof |
| US20140019781A1 (en) * | 2012-07-16 | 2014-01-16 | Hon Hai Precision Industry Co., Ltd. | System for protecting power supply circuit of central processing unit |
| CN203434863U (en) * | 2013-07-03 | 2014-02-12 | 西安Tcl软件开发有限公司 | Power supply circuit and power supply having same power supply circuit |
| CN104238609A (en) * | 2013-06-14 | 2014-12-24 | 鸿富锦精密工业（深圳）有限公司 | Voltage regulation circuit |
| CN204256014U (en) * | 2014-09-26 | 2015-04-08 | 国家电网公司 | A kind of voltage divider and bleeder circuit thereof |
| CN107069422A (en) * | 2017-04-28 | 2017-08-18 | 安徽师范大学 | A kind of electric current continuously adjustabe type laser diode drive module |
| CN207650384U (en) * | 2017-12-29 | 2018-07-24 | 深圳市锐能微科技有限公司 | The detection circuit and electric energy computation chip of bleeder circuit parameter |
-
2018
- 2018-12-27 CN CN201811606250.4A patent/CN109712666A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120058818A (en) * | 2010-11-30 | 2012-06-08 | 엘지이노텍 주식회사 | Circuit for preventing thermal damage of power IC, and power IC system using thereof |
| US20140019781A1 (en) * | 2012-07-16 | 2014-01-16 | Hon Hai Precision Industry Co., Ltd. | System for protecting power supply circuit of central processing unit |
| CN104238609A (en) * | 2013-06-14 | 2014-12-24 | 鸿富锦精密工业（深圳）有限公司 | Voltage regulation circuit |
| CN203434863U (en) * | 2013-07-03 | 2014-02-12 | 西安Tcl软件开发有限公司 | Power supply circuit and power supply having same power supply circuit |
| CN204256014U (en) * | 2014-09-26 | 2015-04-08 | 国家电网公司 | A kind of voltage divider and bleeder circuit thereof |
| CN107069422A (en) * | 2017-04-28 | 2017-08-18 | 安徽师范大学 | A kind of electric current continuously adjustabe type laser diode drive module |
| CN207650384U (en) * | 2017-12-29 | 2018-07-24 | 深圳市锐能微科技有限公司 | The detection circuit and electric energy computation chip of bleeder circuit parameter |
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| PB01 | Publication | ||
| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190503 |
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| RJ01 | Rejection of invention patent application after publication |