CN109709121A - Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method - Google Patents
Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method Download PDFInfo
- Publication number
- CN109709121A CN109709121A CN201910166743.9A CN201910166743A CN109709121A CN 109709121 A CN109709121 A CN 109709121A CN 201910166743 A CN201910166743 A CN 201910166743A CN 109709121 A CN109709121 A CN 109709121A
- Authority
- CN
- China
- Prior art keywords
- sample
- ebsd
- sample stage
- electron
- inclined surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The present invention provides sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method.T-EBSD system includes: sample stage, has the fixture positioned at one end of sample stage, fixture is for fixing sample；Detector, for receiving the transmitted electron for penetrating sample.By using system and method for the invention, resolution ratio can be improved.It is continuously adjustable at 30-70 ° that the design of T-EBSD sample stage of the invention realizes angle between film sample and horizontal plane, and film sample can be stably fixed on inclined surface.
Description
Technical field
The present invention relates to sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method.
Background technique
Scanning electron microscope Momentum profiles instrument (EDS) the mainly surface topography of characterization material and qualitative elementary analysis, puts
Big multiple is times continuously adjustable from tens times to 100,000, and depth of field contrast is big, is imaged rich in three-dimensional sense.Wherein electron backscatter diffraction
(EBSD) technology has obtained the concern of numerous material scholars since commercialization the 1980s, it has also become investigation of materials is not
Can or one of scarce means, it is main by electron beam in the analysis of diffraction Kikuchi band for tilting sample surfaces and inspiring and being formed,
Obtain much information for being directly difficult to, the orientation and size of such as crystal grain, crystal parameters, the not identification of jljl phase and
The high low quantitative information of distribution, crystal boundary type even dislocation density, to our full appreciation material preparation process mechanism and essence
It is most important, it is widely used in the subjects such as materialogy, geology, microelectronics.
The working principle of scanning electron microscope is: by heating electron gun, high-power electron beam is generated, through diaphragm, electromagnetism
Sample to be tested surface is incident in the focusing of lens, in active region occur elastic scattering and it is non-resilient penetrate, to generate secondary
Electronics, absorbs the various useful signals such as electronics, continuous X-rays, auger electrons, cathode-luminescence at backscattered electron, is utilized respectively
Suitable detector detects the size of these signals, so that it is determined that certain features of sample.Common secondary electron detector
SEdetector collects the secondary electron from surface, reacts the shape characteristic on sample to be tested surface, back scattering electronic detector
BE detector collects the backscattered electron from surface, characterizes the composition contrast of sample to be tested, X-ray detector EDS is used for
Analyze the element composition of sample.
Mutually identify and the spatial resolution of orientation analysis of electron backscatter diffraction (EBSD) technology depend primarily on to be measured
Sample occur diffraction backscattered electron generate range, EBSD analysis in, sample to be tested needs to tilt 70 °, therefore in sample table
The horizontal direction in face and the spatial resolution of vertical direction are all well below scanning electron microscope (Scanning Electron
Microscope, SEM) in the space of secondary electron image (surface topography picture) or backscattered electron image (atomic number imaging) point
Resolution, wherein the resolution ratio 5-10nm of secondary electron image, backscattered electron image 50-200nm, lower spatial resolution limit always
The development of EBSD technology has been made, there is significant limitation when especially analyzing nanoscale crystal grain or superfines.In addition,
Sample to be tested need to be pasted onto 45 ° of inclination and provide for oneself on sample stage in EBSD detection, the subsequent original-pack sample stage of scanning electron microscope
25 ° are tilted again, the mode of stickup uses the glue of carbon film conduction, but during the experiment, conducting resinl can generate sample and drag
It drags, to influence the accuracy of experimental data.
Summary of the invention
Transmission mode electron backscatter diffraction (T-EBSD) technology of the invention in SEM using traditional EBSD hardware and
Software systems replace traditional EBSD sample with transmission electron microscope (TEM) film sample, when the beam bombardment sample of SEM
Product penetrate the electronic diffraction signal formation diffraction pattern of film sample by acquiring, then analyze to obtain sample by software
Crystal structure and orientation information, because T-EBSD is the diffraction pattern by acquiring the signal formation for penetrating sample, point
Resolution can reach several nanometers, to meet the analysis and research to nanometer-size die.
The present invention provides a kind of transmission mode electron backscatter diffraction (T-EBSD) systems, comprising: objective pole shoe is used for
Incident electron is emitted to sample surfaces, the incident electron and sample interact, and generate the transmission electricity through the sample
Son；Sample stage has the fixture positioned at one end of the sample stage, and the fixture is for fixing the sample；Detector is used for
Receive the transmitted electron through the sample.
In above-mentioned transmission mode electron backscatter diffraction (T-EBSD) system, wherein the fixture is located at the sample
On the inclined surface of platform.
In above-mentioned transmission mode electron backscatter diffraction (T-EBSD) system, wherein the sample stage further includes spiral
Button, for controlling the value of the inclined surface of the sample stage and the angle of horizontal plane.
The present invention also provides a kind of application methods of transmission mode electron backscatter diffraction (T-EBSD) system, comprising:
Incident electron is emitted to the film sample surface being fixed on inclination sample stage, the incident electron and institute using objective pole shoe
Sample interaction is stated, the transmitted electron through the sample is generated；It is received using detector through the described of the sample
Radio, to obtain sample message；Wherein, the sample stage has the fixture of the inclined surface positioned at the sample stage, described
Fixture is for fixing the sample.
In the application method of above-mentioned transmission mode electron backscatter diffraction (T-EBSD) system, wherein the sample stage
Including spiral button, for controlling the value of the inclined surface of the sample stage and the angle of horizontal plane.
The present invention also provides a kind of sample stages, comprising: inclined surface；Fixture is located on the inclined surface, the folder
Tool is for fixing sample；Baffle is used to support the inclined surface；Spiral button, it is closely coupled with the baffle, for controlling
The movement of baffle in the horizontal direction is stated, and then controls the value of the inclined surface of the sample stage and the angle of horizontal plane.
By using system and method for the invention, following advantage may be implemented: 1) resolution ratio is improved；It 2) can spirit
Adjustment instrument parameter living；3) film sample of transmission electron microscope can directly at scanning electron microscope EBSD analysis detection, realize TEM in
Selective electron diffraction (Selected Area Electron Diffraction, SAED) and the crystal structure that T-EBSD is detected are mutual
For verifying.
The design of T-EBSD sample stage of the invention realizes film sample and the angle of horizontal plane continuously may be used at 30-70 °
It adjusts, and film sample can be stably fixed on inclined surface.A nanometer ultra-fine grain, big may be implemented in system and method for the invention
Deformed sample detection, and improve and mutually identify spatial resolution.
Detailed description of the invention
Fig. 1 shows the schematic diagram of various electronics Yu sample surfaces active region.
Fig. 2 is the sample placement figure of tradition EBSD in SEM.
The sample that Fig. 3 shows T-EBSD in SEM places schematic diagram.
Fig. 4 is the sketch of T-EBSD inclination sample stage.
Specific embodiment
The following examples can make those skilled in the art that the present invention be more fully understood, but not limit in any way
The present invention.
Fig. 1 shows the schematic diagram of various electronics Yu specimen surface active region.As shown in Figure 1, secondary electron and sample are made
It is only limited to sample surface layer with area, range is suitable with the diameter of incident beam, the range of depth < 10nm, therefore with secondary electricity
Sub- imaging resolution is high, about 5-10nm, is capable of the surface appearance feature of complete response sample.The depth selection of backscattered electron
Range carries the appearance and composition information in the region in 1/3 active region, and resolution ratio is about 50-200nm, X-ray and sample
Depth of interaction is about several microns of 1-, and resolution ratio is about 100-1000nm.
The basic layout of electron backscatter diffraction (EBSD) analysis system is as shown in Fig. 2, be placed in scanning electron microscope sample
The indoor sample to be tested of product after wide-angle is verted (generally vert 70 °, by reduce backscattered electron project surface path with
Sufficiently strong back scattering diffraction signal is obtained, absorption signal is reduced), incident beam and sample surfaces area act on, diffraction occurs,
The backscattered electron on surface is collected using phosphorus screen detector in EBSD, these electronics are in reflection process and in sample to be tested crystal
A certain crystal face diffraction will occur when meeting Bragg diffraction (λ=2dsin θ) condition, become electron backscatter diffraction.
Fig. 2 is the sample placement figure of tradition EBSD in SEM.Incident electron emits through objective pole shoe, reaches sample to be tested table
After face, incident electron and sample to be tested effect, diffraction occurs, generates backscattered electron, is received by EBSD detector.
EBSD system hardware is popped one's head in by EBSD, image processor and computer system form, and most important hardware is probe
Part, the CCD camera after phosphorus screen and screen including outer surface of popping one's head in, the advantages of CCD camera, is: stablizing, not with operating condition
Variation, Kikuchi style do not distort, it is long not to be afraid of visible light, service life.Side and electricity of the probe with camera from scanning electron microscope example room
Mirror is connected, and is controlled by external control device.
The acquisition and calibration of backscattered electron diffraction style Kikuchi can all occur by every bit in acquisition sample to be tested
Style is selected Kikuchi style, is converted using hough, the Kikuchi lines in Kikuchi Diffraction Patterns is transformed to the space hough (r, θ)
In point, according to Bragg equation, so that it is determined that crystal structure type of alignment.
When sample to be tested is respectively with level in 0 ° and 70 °, incident electron bombards sample surfaces, point of backscattered electron diffraction
Resolution is higher when tilting 70 °.
In the actual mechanical process of EBSD technology, encounter following problem: (1) spatial resolution is lower, lower space
Resolution ratio limits always the development of EBSD technology, with very big office when especially analyzing nanoscale crystal grain or superfines
It is sex-limited.(2) variety classes sample has different requirements, such as steel material, aluminium alloy, magnesium alloy, nanometer material to instrument parameter
Material is to sample to be tested tilt angle, sample to be tested to the operating distance of Electronic Speculum objective pole shoe, acceleration voltage and sample to be tested thickness
Equal parameter requests are not quite similar.The most basic requirement of EBSD sample is: sample surface wants " fresh ", unstressed, cleaning, surface
It is flat, good electric conductivity.Therefore preparation process is conventional mechanical polishing, electrobrightening.For different materials, in electrobrightening
The proportion of electrolyte, temperature, electrolysis time, size of current, voltage are all not quite similar.(3) sample to be tested needs to paste in EBSD
25 ° are tilted in 45 ° provide for oneself on sample stage of inclination, then with the original-pack sample stage of scanning electron microscope, the mode of stickup uses carbon
Film conduction glue, but during the experiment, conducting resinl can generate dragging to sample, to influence the accurate of experimental data
Property.
In addition, the Selected area electron of transmission electron microscope (Transmission Electron Micro-scope, TEM)
Diffraction (Selected Area Electron Diffraction, SAED), is that one group of diffraction spot is generated on the projection screen of TEM
Point, some lattice plane of practical corresponding reciprocal lattice, passes through the analysis to diffraction spot, it may be determined that the orientation of microcell.Due to sample
Product are relatively thin or particle size is smaller, and the lateral expansion area of incident electron is smaller, therefore spatial resolution with higher.But
Thin sample causes reciprocal point to be degenerated to reciprocal bar, and small sample rotation variation will not cause the variation of diffraction spot position, take
To angular resolution it is lower.Therefore, SAED can accurately measure cell parameter, but lower to the precision of crystal grain orientation measurement,
And the texture and orientation analysis of large area cannot be done.Relative to TEM, the precision of EBSD spatial orientation can achieve 0.5 °, still
Due to the restriction of electron beam sphere of action, the EBSD in SEM cannot be to mutually analyzing less than 30nm.
Therefore, applicant attempts to combine EBSD technology with the advantage of TEM, i.e. transmission mode electron backscatter diffraction
(Transmission Electron backscattered diffraction, T-EBSD), is expected that by T-EBSD and is had
There is high-resolution EBSD result.
Transmission mode electron backscatter diffraction (T-EBSD) technology is that traditional EBSD hardware and software is utilized in SEM
System replaces traditional EBSD sample with TEM film sample, after the beam bombardment sample of SEM, penetrates sample by acquisition
Electronic diffraction signal form diffraction pattern, then analyze to obtain the crystal structure of sample and orientation information by software because
T-EBSD is the diffraction pattern by acquiring the signal formation for penetrating sample, so its resolution ratio can reach several nanometers, from
And meet the analysis and research to nanometer-size die.
For the status of scanning electron microscope attachment EBSD, in conjunction with the characteristics of transmission electron microscope sample, controllable T- is had also developed
EBSD sample stage can directly clamp transmissive film sample, while the tilt angle and sample to be tested that adjust sample to be tested are to object
The operating distance of mirror pole shoe；Corresponding adjustment, such as acceleration voltage, sample are made for parameter of the different materials sample to instrument
Tilt angle, the distance of sample to EBSD detector phosphorus screen make suitable tune using the clarity of diffraction pattern as principle
It is whole, electron beam coordinate system CS finally is caused to sample stage, the position of detector, angle parameter after repackingbeam, sample coordinate system
CSsampleAnd phosphorus screen coordinate system CSscreenVector and orientation redefine.
EBSD technology is combined with the advantage of transmission electron microscope sample, i.e., transmission mode is electron backscattered spreads out
(Transmission Electron backscattered diffraction, T-EBSD) is penetrated, space with higher is obtained
The EBSD of resolution ratio is as a result, the Kikuchi lines formed after Bragg diffraction, application occur for transmitted electron in scanning electron microscope in order to obtain
Sample stage is transformed by people, and experiment uses the 400 tungsten filament environmental scanning electron microscope of QUANTA of FEI Co., and Fig. 3 shows
The sample for having gone out T-EBSD in SEM places schematic diagram.
For example, sample to be tested can use copper bearing steel, the thin sample of 3mm or so is cut in molybdenum wire cutting machine, is then adopted respectively
It is ground with the abrasive paper for metallograph of 120#, 240#, 320#, 400#, 600#, 800#.Then it is processed by shot blasting using polishing machine,
Sample by polishing treatment it is complete after, can again with Ion Beam Thinner be thinned, thus according to specific experiments to thickness of sample carry out
Selection, as long as being capable of detecting when the Kikuchi style of sample to be tested.
What detector was collected is the backscattered electron of sample surfaces in current EBSD device shown in Figure 2.Fig. 3 is pair
Sample stage is transformed, and phosphorus screen position remains unchanged, and improved T-EBSD sample stage receives the transmitted electron hair through sample
The Kikuchi lines formed after raw corresponding diffraction.
Fig. 4 is the sketch of T-EBSD inclination sample stage, and a section is similar to the sample stage of right angled triangle, is used
The preparation of Al sill, to guarantee that electric conductivity is good, the film sample of transmission electron microscope is placed in the inclined surface of sample stage, uses metal clip
Tool is fixed its edge, and by the movement of sample stage horizontal direction spiral button, control is close to the baffle of spiral button, to control
The angle theta of film sample and horizontal plane, the cosine value of angle theta be baffle to specimen holder vertex distance than sample to specimen holder top
The distance of point, wherein length value can be read directly to miniature vernier caliper is equipped between specimen holder vertex in horizontal direction baffle,
Namely cos θ is worth molecular moiety, and baffle designs a series of baffle of different heights according to the variation of θ angle, from 30 °-
70 °, be a series of baffle of different heights of spaced design with 5 °, as changed in Fig. 4 from position 1 to position 2, film sample and water
The angle theta of plane changes to θ ', and the height of baffle accordingly changes, and it is clear to be collected during the experiment with detector
Kikuchi style is principle, determines the optimum position of a certain kind material.
For any material, acceleration voltage, the variation of angle, film sample are arrived to objective pole shoe vertical range, sample
Corresponding variation will all occur for the distance of EBSD probe.Standard specimen first is thinned in T- using (100) oriented single crystal silicon of known structure
EBSD sample stage is corrected instrument parameter range, determines that sample stage zero is sat with the crosspoint of pop one's head in middle line and objective pole shoe middle line
The horizontal line of punctuate is criterion, carries out multiple parameter adjustment, amendment to sample stage of any material after design processing, determines most
Good film sample is to objective pole shoe vertical range and the angle of film sample and horizontal plane, with the average angle deviation of EBSD result
(MAD) minimum principle, it is ensured that obtain that Kikuchi style is clear, complete transmitted electron Kikuchi diffraction spectrogram.
Traditional EBSD is when leaving the factory according to the arrow of coordinate system built in the probe installation location and angle parameter of Electronic Speculum manufacturer
The setting of automatic conversion, the sample stage after design are measured, the variation at inclination angle causes distance of the sample to detector, sample to object lens
Corresponding change has occurred in the distance of pole shoe, therefore, the coordinate system CSbeam of SEM sample stage, the sample coordinate after rotating angle
It is that the vector of CSsample and EBSD probe phosphorus screen coordinate system CSscreen and orientation need to redefine.Utilize SEM sample
Vector conversion formula under sample platform (electron beam) coordinate system: the tilt angle of sample stage is 70 ° under traditional EBSD mode, rotation
Vector matrix is
According to the angle, θ of film sample on the T-EBSD sample stage after above-mentioned design processing, the rotation under T-EBSD is obtained
Vector matrix:
Actual orientation coordinate under T-EBSD mode are as follows: the orientation coordinate of manufacturer's software measurement of use is multiplied by conversion system
It counts, wherein conversion coefficient=MT-EBSD/MEBSD.It is adjusted for instrument parameter under different materials as a result, calculate rotating vector square
Battle array.
By using system and method for the invention, following advantage may be implemented: 1) resolution ratio is improved；It 2) can spirit
Adjustment instrument parameter living；3) film sample of transmission electron microscope can directly at scanning electron microscope EBSD analysis detection, realize TEM in
The crystal parameters that SAED and T-EBSD is detected can be verified each other.
The design of T-EBSD sample stage of the invention realizes angle between film sample and horizontal plane and continuously may be used at 30-70 °
It adjusts, and film sample can be stably fixed on inclined surface.A nanometer ultra-fine grain, big may be implemented in system and method for the invention
Deformed sample detection, and improve and mutually identify spatial resolution.
The design and use of controllable T-EBSD sample stage of the invention improve the application precision level of EBSD and using effect
EBSD technology is widely used in the fields such as nano material, large deformation crystal grain, molecule by rate.
It will be understood by those skilled in the art that above embodiments are only exemplary embodiments, without departing substantially from spirit herein
In the case where range, a variety of variations can be carried out, replaced and changed.
Claims (6)
1. a kind of transmission mode electron backscatter diffraction (T-EBSD) system, comprising:
Objective pole shoe, for emitting incident electron to sample surfaces, the incident electron and sample interact, and generate transmission
The transmitted electron of the sample；
Sample stage has the fixture positioned at one end of the sample stage, and the fixture is for fixing the sample；
Detector, for receiving the transmitted electron through the sample.
2. transmission mode electron backscatter diffraction (T-EBSD) system according to claim 1, wherein the fixture is located at
On the inclined surface of the sample stage.
3. transmission mode electron backscatter diffraction (T-EBSD) system according to claim 2, wherein the sample stage is also
Including spiral button, for controlling the value of the inclined surface of the sample stage and the angle of horizontal plane.
4. a kind of application method of transmission mode electron backscatter diffraction (T-EBSD) system, comprising:
Incident electron is emitted to the surface of the sample to sample stage, the incident electron and the sample phase using objective pole shoe
Interaction generates the transmitted electron through the sample；
The transmitted electron through the sample is received using detector, to obtain the structural information of sample；
Wherein, the sample stage includes the fixture of the inclined surface positioned at the sample stage, and the fixture is for fixing the sample
Product.
5. the application method of transmission mode electron backscatter diffraction (T-EBSD) system according to claim 4, wherein institute
Stating sample stage includes spiral button, for controlling the value of the inclined surface of the sample stage and the angle of horizontal plane.
6. a kind of sample stage, comprising:
Inclined surface；
Fixture is located on the inclined surface, and the fixture is for fixing sample；
Baffle is used to support the inclined surface；
Spiral button, it is closely coupled with the baffle, for controlling the movement of the baffle in the horizontal direction, and then described in control
The value of the angle of the inclined surface and horizontal plane of sample stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910166743.9A CN109709121A (en) | 2019-03-06 | 2019-03-06 | Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910166743.9A CN109709121A (en) | 2019-03-06 | 2019-03-06 | Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109709121A true CN109709121A (en) | 2019-05-03 |
Family
ID=66266343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910166743.9A Pending CN109709121A (en) | 2019-03-06 | 2019-03-06 | Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109709121A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111474196A (en) * | 2020-04-16 | 2020-07-31 | 宸鸿科技(厦门)有限公司 | Method for controlling deformation generated by preparation of transmission electron microscope sample |
| WO2020220569A1 (en) * | 2019-06-12 | 2020-11-05 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Scanning electron microscope with composite detection system and specimen detection method |
| CN111982943A (en) * | 2020-08-05 | 2020-11-24 | 上海大学 | EBSD test sample platform and application thereof |
| CN113433149A (en) * | 2021-05-26 | 2021-09-24 | 中国科学院金属研究所 | Method for realizing cross-scale continuous automatic characterization analysis and test of EBSD (electronic brake force sensor) system |
| CN115128109A (en) * | 2022-09-02 | 2022-09-30 | 北京化工大学 | EBSD sample stage based on orientation calibration and correction and image acquisition method |
| CN115830053A (en) * | 2023-01-17 | 2023-03-21 | 江苏金恒信息科技股份有限公司 | Cord steel mosaic sample edge positioning method and system based on machine vision |
| CN117517373A (en) * | 2023-12-08 | 2024-02-06 | 屹东光学技术(苏州)有限公司 | Method for testing secondary electron yield of sample |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200982932Y (en) * | 2006-11-03 | 2007-11-28 | 中国科学院金属研究所 | A device for using ion beam sample processing interface to realize bear dispersion |
| CN202397240U (en) * | 2011-12-16 | 2012-08-29 | 昆明理工大学 | Paring knife capable of adjusting paring thickness for fruit and vegetable |
| CN203824939U (en) * | 2013-12-19 | 2014-09-10 | 江苏省沙钢钢铁研究院有限公司 | Sample table for transmission type electron back scattering diffraction experiment |
| CN104064079A (en) * | 2014-07-18 | 2014-09-24 | 李钦琦 | Friction self-locking principle teaching test device and test method thereof |
| CN104183453A (en) * | 2014-07-17 | 2014-12-03 | 胜科纳米（苏州）有限公司 | Sample platform and microscope system |
| WO2015121603A1 (en) * | 2014-02-11 | 2015-08-20 | Oxford Instruments Nanotechnology Tools Limited | Method of performing electron diffraction pattern analysis upon a sample |
| CN105651792A (en) * | 2015-12-30 | 2016-06-08 | 中国科学院上海硅酸盐研究所 | SEM transmission electron Kikuchi diffraction apparatus and analytical method |
| CN205538757U (en) * | 2016-01-25 | 2016-08-31 | 哈尔滨理工大学 | A specimen grip utensil for t -EBSD test |
| CN205621347U (en) * | 2016-01-28 | 2016-10-05 | 黎小慧 | Adjustable high inclined plane demonstration ware |
| CN206210746U (en) * | 2016-11-18 | 2017-05-31 | 中国科学院地球化学研究所 | One kind transmission EBSD fixtures |
| CN207133208U (en) * | 2017-04-26 | 2018-03-23 | 江苏省沙钢钢铁研究院有限公司 | Transmission-type back scattering electron diffraction sample stage |
| CN108303792A (en) * | 2018-04-04 | 2018-07-20 | 殷跃锋 | It is a kind of can the vertical microscopical method of adjustment of two level adjustment |
| CN108333203A (en) * | 2018-02-09 | 2018-07-27 | 中国科学院地球化学研究所 | A kind of method of in situ detection mineral microcell EBSD images |
-
2019
- 2019-03-06 CN CN201910166743.9A patent/CN109709121A/en active Pending
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN200982932Y (en) * | 2006-11-03 | 2007-11-28 | 中国科学院金属研究所 | A device for using ion beam sample processing interface to realize bear dispersion |
| CN202397240U (en) * | 2011-12-16 | 2012-08-29 | 昆明理工大学 | Paring knife capable of adjusting paring thickness for fruit and vegetable |
| CN203824939U (en) * | 2013-12-19 | 2014-09-10 | 江苏省沙钢钢铁研究院有限公司 | Sample table for transmission type electron back scattering diffraction experiment |
| WO2015121603A1 (en) * | 2014-02-11 | 2015-08-20 | Oxford Instruments Nanotechnology Tools Limited | Method of performing electron diffraction pattern analysis upon a sample |
| CN104183453A (en) * | 2014-07-17 | 2014-12-03 | 胜科纳米（苏州）有限公司 | Sample platform and microscope system |
| CN104064079A (en) * | 2014-07-18 | 2014-09-24 | 李钦琦 | Friction self-locking principle teaching test device and test method thereof |
| CN105651792A (en) * | 2015-12-30 | 2016-06-08 | 中国科学院上海硅酸盐研究所 | SEM transmission electron Kikuchi diffraction apparatus and analytical method |
| CN205538757U (en) * | 2016-01-25 | 2016-08-31 | 哈尔滨理工大学 | A specimen grip utensil for t -EBSD test |
| CN205621347U (en) * | 2016-01-28 | 2016-10-05 | 黎小慧 | Adjustable high inclined plane demonstration ware |
| CN206210746U (en) * | 2016-11-18 | 2017-05-31 | 中国科学院地球化学研究所 | One kind transmission EBSD fixtures |
| CN207133208U (en) * | 2017-04-26 | 2018-03-23 | 江苏省沙钢钢铁研究院有限公司 | Transmission-type back scattering electron diffraction sample stage |
| CN108333203A (en) * | 2018-02-09 | 2018-07-27 | 中国科学院地球化学研究所 | A kind of method of in situ detection mineral microcell EBSD images |
| CN108303792A (en) * | 2018-04-04 | 2018-07-20 | 殷跃锋 | It is a kind of can the vertical microscopical method of adjustment of two level adjustment |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020220569A1 (en) * | 2019-06-12 | 2020-11-05 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Scanning electron microscope with composite detection system and specimen detection method |
| US11145487B2 (en) | 2019-06-12 | 2021-10-12 | Focus-Ebeam Technology (Beijing) Co., Ltd. | Scanning electron microscope with composite detection system and specimen detection method |
| CN111474196A (en) * | 2020-04-16 | 2020-07-31 | 宸鸿科技(厦门)有限公司 | Method for controlling deformation generated by preparation of transmission electron microscope sample |
| CN111474196B (en) * | 2020-04-16 | 2024-01-30 | 宸鸿科技(厦门)有限公司 | Method for controlling deformation generated by sample preparation of transmission electron microscope |
| CN111982943A (en) * | 2020-08-05 | 2020-11-24 | 上海大学 | EBSD test sample platform and application thereof |
| CN113433149A (en) * | 2021-05-26 | 2021-09-24 | 中国科学院金属研究所 | Method for realizing cross-scale continuous automatic characterization analysis and test of EBSD (electronic brake force sensor) system |
| CN115128109A (en) * | 2022-09-02 | 2022-09-30 | 北京化工大学 | EBSD sample stage based on orientation calibration and correction and image acquisition method |
| CN115128109B (en) * | 2022-09-02 | 2022-11-25 | 北京化工大学 | EBSD sample stage based on orientation calibration and correction and image acquisition method |
| CN115830053A (en) * | 2023-01-17 | 2023-03-21 | 江苏金恒信息科技股份有限公司 | Cord steel mosaic sample edge positioning method and system based on machine vision |
| CN115830053B (en) * | 2023-01-17 | 2023-09-05 | 江苏金恒信息科技股份有限公司 | Machine vision-based cord steel mosaic edge positioning method and system |
| CN117517373A (en) * | 2023-12-08 | 2024-02-06 | 屹东光学技术(苏州)有限公司 | Method for testing secondary electron yield of sample |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109709121A (en) | Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method | |
| Akhtar et al. | Scanning electron microscopy: Principle and applications in nanomaterials characterization | |
| Schwarzer et al. | Present state of electron backscatter diffraction and prospective developments | |
| Loretto | Electron beam analysis of materials | |
| Zaefferer | A critical review of orientation microscopy in SEM and TEM | |
| Ulrich et al. | A new white beam X-ray microdiffraction setup on the BM32 beamline at the European Synchrotron Radiation Facility | |
| US8253099B2 (en) | Methods and devices for high throughput crystal structure analysis by electron diffraction | |
| US7091484B2 (en) | Method and apparatus for crystal analysis | |
| Niessen et al. | A systematic comparison of on-axis and off-axis transmission Kikuchi diffraction | |
| Harland et al. | Accurate microcrystallography at high spatial resolution using electron back-scattering patterns in a field emission gun scanning electron microscope | |
| Meng et al. | Three-dimensional nanostructure determination from a large diffraction data set recorded using scanning electron nanodiffraction | |
| CN107481914A (en) | A kind of transmission-type low energy electrons microscopic system | |
| Bret et al. | Periodic structure formation by focused electron-beam-induced deposition | |
| TWI609402B (en) | A low energy electron microscopy | |
| Fundenberger et al. | Transmission Kikuchi Diffraction (TKD) via a horizontally positioned detector | |
| CN107473179B (en) | A method of characterization two-dimension nano materials | |
| Schwarzer | Measurement of local textures with transmission and scanning electron microscopes | |
| Gomes Perini et al. | Developments on a SEM-based X-ray tomography system: Stabilization scheme and performance evaluation | |
| JP6406032B2 (en) | Sample stage and electron microscope equipped with the same | |
| JP7527282B2 (en) | Electron diffraction imaging system for determining molecular structure and conformation | |
| Hayashida et al. | Accurate measurement of relative tilt and azimuth angles in electron tomography: A comparison of fiducial marker method with electron diffraction | |
| Cowley et al. | A microdiffraction study of gold-ruthenium catalyst particles | |
| Xu et al. | Spatially resolved scanning probe electron energy spectroscopy for Ag islands on a graphite surface | |
| US7005652B1 (en) | Sample-stand for scanning electron microscope | |
| Kolb et al. | Automated diffraction tomography combined with electron precession: a new tool for ab initio nanostructure analysis |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190503 |
|
| RJ01 | Rejection of invention patent application after publication |