CN200982932Y - A device for using ion beam sample processing interface to realize bear dispersion - Google Patents
A device for using ion beam sample processing interface to realize bear dispersion Download PDFInfo
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- CN200982932Y CN200982932Y CNU2006200939222U CN200620093922U CN200982932Y CN 200982932 Y CN200982932 Y CN 200982932Y CN U2006200939222 U CNU2006200939222 U CN U2006200939222U CN 200620093922 U CN200620093922 U CN 200620093922U CN 200982932 Y CN200982932 Y CN 200982932Y
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- 238000010884 ion-beam technique Methods 0.000 title claims description 68
- 238000012545 processing Methods 0.000 title description 9
- 239000006185 dispersion Substances 0.000 title 1
- 238000012512 characterization method Methods 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 12
- 238000002360 preparation method Methods 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 4
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- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 238000004458 analytical method Methods 0.000 description 5
- 238000000609 electron-beam lithography Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
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Abstract
The utility model relates to a preparation and imaging technology of a sample token interface, concretely relates to a device which uses an ion cluster to process a sample interface to realize a back scattering token. The utility model utilizes a double-beam focusing ion cluster system to process the sample interface to realize a back scattering imaging and adopts a double-tilter sample platform to fix a token sample to have an ion cluster preparation token interface and realize the back scattering imaging. The device is provided with a focusing ion cluster system and a sample platform, wherein the sample platform forms the double-tilter sample platform with a main tilter platform and an auxiliary tilter platform and the focusing ion cluster system auxiliary tilter platform which has a some change direction with the focusing ion cluster system main tilter platform is arranged on the focusing ion cluster system main tilter platform. The utility model by adopting the novel device is capable of preparing the back scattering token sample corresponding to demand of a scanning electric mirror, reducing influences and disturbances of factors of a corrosion, an oxidation and a surface flaw or the like of the sample, well reflecting sample surface characters needed to analyze and creating conditions for realizing a high resolution analyze token sample.
Description
Technical field
The utility model belongs to the preparation and the imaging technique at sample characterization interface, is specially a kind of device of realizing backscattering characterization with the I.B.M. example interface.
Background technology
Scanning electron microscope (SEM) generally adopts the secondary electron imaging to carry out the material surface microstructure and characterizes, because secondary electron energy low (being lower than 50 electron-volts), having only could the effusion sample surfaces apart from the top layer secondary electron of sample surfaces very near (100 ), and detected, amplification and imaging.Be used to detect the detector of secondary electron, the secondary electron that the sample surfaces all directions can be sent all collects, so the secondary electron image of scanning electron microscope has very strong stereoscopic sensation, directly reflects surface appearance feature.And the contained sample message of backscattered electron is made of average element, morphology, crystallization and magnetic property etc., while backscattered electron energy height, sample is charged and damage ratio is less, can obtain the experiment information of 1 μ m, and electron backscattered in recent years technology is widely used in the materials microstructure analysis.At present in scanning electron microscope back scattering imaging sample preparation methods, generally adopt at first mechanical buffing to carry out the method for chemical polishing subsequently, along with science and technology development, specimen method is proposed more and more higher requirement, especially in the backward scattering specimen preparation of a lot of easily oxidations, corrosion and low-durometer material, be difficult to prepare the sample that meets sign, can't realize the back scattering diffraction style, making subsequently, the electronic microscope photos result can not react the intrinsic structure.In addition, as sample being placed on the uniclinal turntable that is used to process wafer, may make sample in transfer process, cause damage.
The utility model content
The purpose of this utility model is to provide a kind of device of realizing backscattering characterization with the I.B.M. example interface, thereby utilize the example interface processed realization of two-beam focused ion beam system back scattering imaging, adopt the fixing sample that characterizes of two sample stage of verting to carry out ion beam preparation characterization interface and realize back scattering imaging.
The technical solution of the utility model is:
A kind of device of realizing backscattering characterization with the I.B.M. example interface, have focused ion beam system, sample stage, described sample stage is two sample stage of verting that main swivel angle plate, secondary swivel angle plate form, and installs on focused ion beam system master swivel angle plate with focused ion beam system master swivel angle plate and turns to the secondary swivel angle plate of identical focused ion beam system.
The secondary swivel angle plate of described focused ion beam system is installed in focused ion beam system master swivel angle plate by transmission shaft, installs on the transmission shaft to drive the gear that the secondary swivel angle plate of focused ion beam system verts, and secondary swivel angle plate can be controlled the anglec of rotation.
Sample adopts carbonaceous conductive glue to be fixed in the sample holder, and the sample holder is fixed by the pin one end plug-in mounting that is connected with the secondary swivel angle plate of focused ion beam system, fixes with fastening bolt with the pin other end that the secondary swivel angle plate of focused ion beam system is connected.
The utility model backward scattering example interface I.B.M. and characterizing method adopt focused ion beam system to carry out ion beam preparation characterization interface in conjunction with two sample stage of verting with the fixing sample that characterizes, and then realize back scattering imaging, are mainly finished by following steps:
1, in focused ion beam system, will need the sample that characterizes to adopt carbonaceous conductive glue to be fixed in the sample holder, with the holder of fastening bolt fixed sample on the secondary swivel angle plate of focused ion beam system, prevent to become flexible, keep the satisfactory electrical conductivity between secondary sample stage and the sample, need the position of preparation characterization to place to the side;
2, utilize the secondary electron imaging that height of specimen is calibrated identification, the operating distance between sample and the secondary electron detector is adjusted into 4.9～5.1mm, focus on the sample upper surface;
3, vert focused ion beam system master swivel angle plate to spending from the horizontal by 50～54, open ion beam simultaneously, carry out two-beam centering and handle, ion beam pole shoe and sample are 16.3～16.7mm to middle distance, keep the unification of I.B.M. position and secondary electron observation position;
4, adopt the big line of ion beam (＞3nA) preprocessing characterizes the interface, (finishing of 50PA～100PA) the preparation sample that finishes need characterize the interface, and it is bright and clean that factory interface is minute surface, no line pectination vestige to adopt little line, reach the sign requirement, clear Kikuchi lines style in back scattering diffraction, occurs;
5, rotary-focusing ion beam system master swivel angle plate 50～54 degree are got back to the original equilibrium position, need this moment the backscattering characterization interface parallel with secondary beam;
6, secondary swivel angle plate 90 degree of rotary-focusing ion beam system, realization I.B.M. interface is vertical with incident beam, enables the backward scattering detector and realizes that the backscattered electron interface characterizes.
The utility model adopts the two-beam focused ion beam system, and " two-beam " is meant electron beam+ion beam; In the two-beam focused ion beam system, the effect of ion beam is a processed sample, realizes the bright and clean planarization at the interface of sample characterization gradually; The effect of electron beam is secondary electron imaging and back scattering imaging, keeps vertical with the sample factory interface, selects the backward scattering detector that the sample factory interface is characterized.The ion beam pole shoe is the assembly bottom at electron beam system, can apply electric field, realizes that electronics enters detector.
The beneficial effects of the utility model are:
1, the utility model utilizes focused ion beam system to carry out the processing of backward scattering example interface in conjunction with two swivel angle plates and characterizes, adopt focused ion beam system processing backscattered electron to characterize the interface, easier imaging under the backscattered electron bundle, two swivel angle plate methods replace being used to process the uniclinal turntable of wafer and utilize focused ion beam processing backscattered electron sign interface in the employing sample chamber, simple, can prepare the backscattering characterization sample that meets the scanning electron microscope demand, reduce the corrosion of sample, the influence of factor such as oxidation and surface scratch and interference, better reflection needs the sample surfaces feature of analysis, for realizing that high resolution analysis characterizes sample and creates conditions.
2, the utility model can realize that need characterize the position to sample carries out pinpoint, location processing, breaks through the sign that two-dimentional yardstick development realizes micro interface under the material surface.
3, the utility model process can not produce other feature structures in the unstressed residual and temperature effect of example interface, has improved the accuracy of experimental result.
4, the utility model increases the secondary swivel angle plate of focused ion beam system on original main uniclinal turntable basis, owing to use two swivel angle plates, prevent that effectively sample from causing damage in transfer process, can in two-beam focused ion beam system sample chamber, realize interface processing and sign.
Description of drawings
Fig. 1 is the utility model apparatus structure synoptic diagram.
Fig. 2 is the utility model job operation median surface processing synoptic diagram.
Fig. 3 is that the utility model job operation median surface characterizes synoptic diagram.
Description of symbols among the figure:
The 1-1-fixed support, 1-2-detector, 1-3-sample factory interface, the 1-4-pin, 1-5-fastening bolt, the 1-6-driving gear set of verting, the 1-7-rotary drive motor, 1-8-master's swivel angle plate, 1-9-electron beam patterning system, 1-10-ion beam light path system, the holder of 1-11-sample, the secondary swivel angle plate of 1-12-, the 1-13-sample.
Embodiment
Below in conjunction with embodiment and accompanying drawing the utility model is described further.
As Figure 1-3, the device that the utility model adopted comprises side hanging backward scattering detector fixed support 1-1, side hanging backward scattering detector 1-2, sample factory interface 1-3, the pin 1-4, the fastening bolt 1-5 that are connected with the secondary swivel angle plate of focused ion beam system, the driving gear set of verting 1-6, rotary drive motor 1-7, focused ion beam system master swivel angle plate 1-8, the 1-9 of electron beam patterning system, ion beam light path system 1-10, sample holder 1-11, focused ion beam system pair swivel angle plate 1-12; Wherein, side hanging backward scattering detector fixed support 1-1, side hanging backward scattering detector 1-2, the 1-9 of electron beam patterning system, ion beam light path system 1-10 are the parts in the existing two-beam focused ion beam system; Different with existing apparatus is, the utility model has adopted two sample stage of verting in the two-beam focused ion beam system, on focused ion beam system master swivel angle plate 1-8, turn to the secondary swivel angle plate 1-12 of identical focused ion beam system with focused ion beam system master swivel angle plate 1-8 by the transmission shaft installation, the secondary swivel angle plate 1-12 of focused ion beam system drives transmission shaft by the driving gear set 1-6 that verts that rotary drive motor 1-7 drives, secondary swivel angle plate 1-12 is verted, and can effectively control tilt angle.Sample 1-13 is fixed on the sample holder 1-11 by carbonaceous conductive glue, and sample holder 1-11 is inserted on the secondary swivel angle plate 1-12 by pin 1-4, and pin 1-4 fixes by fastening bolt 1-5.
Thereby the two-beam focused ion beam system that utilizes described in the utility model is specifically finished by following procedure of processing in conjunction with the two example interface processed realization of swivel angle plate back scattering imaging methods:
At first needs being carried out backscattered electron sign sample 1-13 utilizes the carbonaceous conductive double faced adhesive tape to be fixed on the sample holder 1-11, need the sample factory interface 1-3 that characterizes to be in the side, by pin 1-4 and the fastening bolt 1-5 that is connected with the secondary swivel angle plate of focused ion beam system sample holder 1-11 is fixed on the secondary swivel angle plate 1-12 of focused ion beam system, keeps the satisfactory electrical conductivity (Fig. 1) between the secondary swivel angle plate 1-12 of sample holder 1-11 and focused ion beam system; By the 1-9 of electron beam patterning system height of specimen is discerned, the height by rising focused ion beam system master swivel angle plate 1-8 is to 5mm; Be rotated counterclockwise main swivel angle plate 1-8 to spending with horizontal direction angle 52, open ion beam light path system 1-10, carry out the centering of 1-9 of electron beam patterning system and ion beam light path system 1-10, keeping sample observation station and ion beam light path system 1-10 pole shoe distance is 16.5mm (Fig. 2); Adopt the big line of ion beam light path system 1-10 (big line can be 3-20nA) to carry out the preparatory processing of the sample factory interface 1-3 of backscattering characterization, (50～100PA) interface finishing realize the desired planarization of sample factory interface 1-3 of sample characterization gradually to adopt the little line of focused ion beam system 1-10 subsequently; Rotary-focusing ion beam system master swivel angle plate 1-8 is to the original equilibrium position, driving the driving gear set 1-6 that verts by control rotary drive motor 1-7 subsequently revolves the axle of the secondary swivel angle plate 1-12 of focused ion beam system on focused ion beam system master swivel angle plate 1-8 to turn 90 degrees, make electron beam and sample factory interface 1-3 maintenance vertical (Fig. 3); Select backward scattering detector 1-2 that sample factory interface 1-3 is characterized.
Result: adopt the utility model can prepare the sign sample that meets experiment condition, avoid and overcome the influence of oxidation in traditional specimen preparation process, corrosion and surface scratch, realize pinpoint, location back scattering diffraction style analysis, imaging under the backscattered electron bundle, make electronic microscope photos bearing reaction intrinsic structure subsequently, for realizing that high resolution analysis characterizes sample and creates conditions.
Claims (4)
1. device of realizing backscattering characterization with the I.B.M. example interface, have focused ion beam system, sample stage, it is characterized in that: described sample stage is two sample stage of verting that main swivel angle plate, secondary swivel angle plate form, and installs on focused ion beam system master swivel angle plate with focused ion beam system master swivel angle plate and turns to the secondary swivel angle plate of identical focused ion beam system.
2, according to the described device of realizing backscattering characterization with the I.B.M. example interface of claim 1, it is characterized in that: the secondary swivel angle plate of described focused ion beam system is installed in focused ion beam system master swivel angle plate by transmission shaft, installs on the transmission shaft to drive the gear that the secondary swivel angle plate of focused ion beam system verts.
3. the device of realizing backscattering characterization with the I.B.M. example interface according to claim 1, it is characterized in that: sample adopts carbonaceous conductive glue to be fixed in the sample holder, the sample holder is fixed by the pin one end plug-in mounting that is connected with the secondary swivel angle plate of focused ion beam system, fixes with fastening bolt with the pin other end that the secondary swivel angle plate of focused ion beam system is connected.
4. the device with I.B.M. example interface realization backscattering characterization according to claim 1, it is characterized in that: described focused ion beam system is the two-beam focused ion beam system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200939222U CN200982932Y (en) | 2006-11-03 | 2006-11-03 | A device for using ion beam sample processing interface to realize bear dispersion |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2006200939222U CN200982932Y (en) | 2006-11-03 | 2006-11-03 | A device for using ion beam sample processing interface to realize bear dispersion |
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| CN200982932Y true CN200982932Y (en) | 2007-11-28 |
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| CNU2006200939222U Expired - Fee Related CN200982932Y (en) | 2006-11-03 | 2006-11-03 | A device for using ion beam sample processing interface to realize bear dispersion |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105277576A (en) * | 2014-07-21 | 2016-01-27 | Fei公司 | Tem sample mounting geometry |
| CN107607570A (en) * | 2017-08-31 | 2018-01-19 | 武汉钢铁有限公司 | Galvanized plate surface defect in-situ study method |
| CN109709121A (en) * | 2019-03-06 | 2019-05-03 | 内蒙古科技大学 | Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method |
| CN113097084A (en) * | 2021-03-19 | 2021-07-09 | 长江存储科技有限责任公司 | Method for exposing metal layer and circuit repairing method |
| CN115229316A (en) * | 2022-09-21 | 2022-10-25 | 中国科学院地质与地球物理研究所 | Ion cutting calibration system and method |
| US11658001B1 (en) | 2022-12-07 | 2023-05-23 | Institute Of Geology And Geophysics, Chinese Academy Of Sciences | Ion beam cutting calibration system and method |
-
2006
- 2006-11-03 CN CNU2006200939222U patent/CN200982932Y/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105277576A (en) * | 2014-07-21 | 2016-01-27 | Fei公司 | Tem sample mounting geometry |
| CN105277576B (en) * | 2014-07-21 | 2019-08-27 | Fei公司 | TEM sample places layout |
| CN107607570A (en) * | 2017-08-31 | 2018-01-19 | 武汉钢铁有限公司 | Galvanized plate surface defect in-situ study method |
| CN109709121A (en) * | 2019-03-06 | 2019-05-03 | 内蒙古科技大学 | Sample stage and transmission mode electron backscatter diffraction (T-EBSD) system and method |
| CN113097084A (en) * | 2021-03-19 | 2021-07-09 | 长江存储科技有限责任公司 | Method for exposing metal layer and circuit repairing method |
| CN115229316A (en) * | 2022-09-21 | 2022-10-25 | 中国科学院地质与地球物理研究所 | Ion cutting calibration system and method |
| CN115229316B (en) * | 2022-09-21 | 2022-11-22 | 中国科学院地质与地球物理研究所 | Ion cutting calibration system and method |
| US11658001B1 (en) | 2022-12-07 | 2023-05-23 | Institute Of Geology And Geophysics, Chinese Academy Of Sciences | Ion beam cutting calibration system and method |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071128 Termination date: 20141103 |
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| EXPY | Termination of patent right or utility model |