CN205246559U - Tellurium zinc cadmium wafer corrodes quick image device of appearance - Google Patents
Tellurium zinc cadmium wafer corrodes quick image device of appearance Download PDFInfo
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- CN205246559U CN205246559U CN201520979113.0U CN201520979113U CN205246559U CN 205246559 U CN205246559 U CN 205246559U CN 201520979113 U CN201520979113 U CN 201520979113U CN 205246559 U CN205246559 U CN 205246559U
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Abstract
The utility model discloses a tellurium zinc cadmium wafer corrodes quick image device of appearance, the device includes a frame, this frame comprises sample platform, lower plate, left side baffle, top cap, right side baffle and intermediate bottom, a plurality of screws of even spacing distribution are gone up with intermediate bottom to the top cap for the installation light source is a plurality of, be provided with a plurality of switch on the frame top cap, this position of the switch corresponds with the light source each other, the sample platform is placed on the lower plate, can freely remove, the left side baffle is equipped with the power master switch, passes through the electric wire connection in series -parallel with switch and light source on the top cap. This patent is through using the visible light technique of shooing, and hole defect distribution observes and the record to tellurium zinc cadmium wafer surface corrosion, can obtain the defect distribution appearance of whole wafer fast.
Description
Technical field
This patent relates to semiconductor and device technology field, is specifically related to a kind of fast imaging device of cadmium zinc telluride crystal wafer erosion profile.
Background technology
The defects such as the dislocation of tellurium zinc cadmium substrate adopt chemical corrosion method to disclose conventionally, and generally, substrate defects distributes and be inhomogeneous, has stronger distribution characteristics, and the overall evaluation of substrate defects distribution characteristics is more paid close attention in substrate application. Traditional evaluation method is to use light microscope to observe sample surfaces, still due to the limitation of field range, is difficult to realize observation and imaging that cadmium zinc telluride crystal wafer blemish is distributed. X-ray diffraction topography is a kind of imaging technique of nondestructive test material defect distribution, can realize whole wafer is scanned to picture mosaic detection, the macroscopic view that can present preferably wafer surface blemish distributes, but defect resolution is lower, image taking speed is slow, apparatus expensive, and be there is to radiation risk in operating personnel. The present invention is by using visible ray shooting technology, to the imaging of taking pictures of etching surface, can obtain fast the defect distribution pattern of whole wafer.
Summary of the invention
The object of this patent be to provide a kind of can Fast Evaluation and record the device of cadmium zinc telluride crystal wafer blemish distribution characteristics. By imaging under visible ray, can record clearly the distribution characteristics of tellurium zinc cadmium substrate surface corrosion default.
The technical scheme of this patent is as follows:
A fast imaging device for cadmium zinc telluride crystal wafer erosion profile, described device comprises: a framework, this framework is by sample stage, lower shoe, left side baffle plate, top cover, right side baffle plate, central dividing plate and light source; Described top cover and central dividing plate equal intervals some screws that distribute, some for light source is installed; On described top cover, be provided with some power switches, this position of the switch is mutually corresponding with light source; Described sample stage is placed on lower shoe, can move freely; Described left side baffle plate is provided with battery main switch, in parallel by electric wire with power switch and light source on top cover.
Described sample stage material is lucite.
Described light source is shot-light, according to top cover length, 6 shot-lights is from left to right equidistantly installed, and shot-light incident angle, within the scope of 0 °～180 °, regulates the angle of shot-light, and the light that each shot-light sends can be irradiated on sample stage equably.
This patent also provides a kind of safe, easy to operate evaluation method based on cadmium zinc telluride crystal wafer blemish simultaneously; The method can be carried out large view field imaging to the corrosion surface of tellurium zinc cadmium, distributes with the face that obtains fault in material.
Technical scheme is as follows:
1 selects sample: get along (111) face and process the cadmium zinc telluride crystal wafer obtaining, wafer surface is carried out to attenuated polishing, obtain the surface of a minute surface.
2 configuration Everson corrosive liquids: press lactic acid: nitric acid: hydrofluoric acid volume ratio 100:20:5 preparation Everson corrosive liquid, stirs stand-by.
3Everson corrosion: cadmium zinc telluride crystal wafer (111) B is faced up and immersed in corrosive liquid, and corrosion 150s, then wafer is cleaned by deionized water, dries up by nitrogen gun.
4 regulate the best light source of shot-light: the tellurium zinc cadmium substrate corroding is placed on sample stage, adjusts position and the angle of shot-light, debug out uniform area source.
5 install microspur frame: digital camera is arranged on special microspur frame.
6 arrange the parameters of camera: use the G11 of Canon digital camera to carry out photometry to targeted environment, under manual mode, control aperture and shutter, and then ISO speed is adjusted to 80. Metering mode is set to a photometry, and shutter speed is set to 1/160, and white balance is set to incandescent lamp, and screening-mode is set to microspur.
7 take pictures: under area source irradiates uniformly, adjust the position of cadmium zinc telluride crystal wafer, find best shooting angle, wafer is carried out to Manual focusing, press shutter and take pictures, thereby record the defect distribution information on cadmium zinc telluride crystal wafer surface.
The beneficial effect that this patent compared with prior art has is:
(1) obtain the speed of whole wafer surface blemish pattern by the imaging method of taking pictures fast, be applicable to processing line cadmium zinc telluride crystal wafer is carried out to quick quality screening.
(2) compared with X-ray diffraction topography, without x radiation x risk.
(3) this apparatus structure is simple, and cost is low, easy to operate.
Brief description of the drawings
Fig. 1 is the structural representation of patent device.
Fig. 2 is the top view of patent device structure.
Description of reference numerals:
1, sample stage; 2, lower shoe; 3, left side baffle plate; 4, top cover; 5, right side baffle plate; 6, central dividing plate; 7, light source; 8, switch; 9, battery main switch.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated. Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Shown in seeing figures.1.and.2, the invention provides a kind of fast imaging device of cadmium zinc telluride crystal wafer erosion profile, described device comprises: a framework, and this framework is made up of sample stage 1, lower shoe 2, left side baffle plate 3, top cover 4, right side baffle plate 5, central dividing plate 6 and light source 7; Described top cover 4 and central dividing plate 6 equal intervals some screws that distribute, for installing light source 7; On described top cover 4, be provided with some power switches 8, this position of the switch is mutually corresponding with light source 7; Described sample stage 1 is placed on lower shoe 2, can move freely; Described left side baffle plate 3 is provided with battery main switch 9, in parallel by electric wire with power switch 8 and light source 7 on top cover.
Described sample stage 1 material is lucite.
Described light source 7 is 6 shot-lights, from left to right equidistant according to top cover length, regulates the angle of shot-light, and the light that each shot-light sends can be irradiated on sample stage 1 equably.
Adopt the fast imaging device of above-mentioned cadmium zinc telluride crystal wafer erosion profile to carry out the evaluation method of cadmium zinc telluride crystal wafer blemish, comprise the following steps:
1 selects sample: get along (111) face and process the cadmium zinc telluride crystal wafer obtaining, wafer surface is carried out to attenuated polishing, obtain the surface of a minute surface.
2 configuration Everson corrosive liquids: press lactic acid: nitric acid: hydrofluoric acid volume ratio 100:20:5 preparation Everson corrosive liquid, stirs stand-by.
3Everson corrosion: cadmium zinc telluride crystal wafer (111) B is faced up and immersed in corrosive liquid, and corrosion 150s, then wafer is cleaned by deionized water, dries up by nitrogen gun.
4 regulate the best light source of shot-light: the tellurium zinc cadmium substrate corroding is placed on sample stage, adjusts position and the angle of shot-light, debug out uniform area source.
5 install microspur frame: digital camera is arranged on special microspur frame.
6 arrange the parameters of camera: use the G11 of Canon digital camera to carry out photometry to targeted environment, under manual mode, control aperture and shutter, and then ISO speed is adjusted to 80. Metering mode is set to a photometry, and shutter speed is set to 1/160, and white balance is set to incandescent lamp, and screening-mode is set to microspur.
7 take pictures: under area source irradiates uniformly, adjust the position of cadmium zinc telluride crystal wafer, find best shooting angle, wafer is carried out to Manual focusing, press shutter and take pictures, thereby record the defect distribution information on cadmium zinc telluride crystal wafer surface.
Claims (3)
1. the fast imaging device of a cadmium zinc telluride crystal wafer erosion profile, comprise sample stage (1), lower shoe (2), left side baffle plate (3), top cover (4), right side baffle plate (5), central dividing plate (6), light source (7), power switch (8) and battery main switch (9), it is characterized in that: described top cover (4) and central dividing plate (6) equal intervals some screws that distribute, for light source (7) is installed; On described top cover (4), be provided with some power switches (8), this position of the switch is mutually corresponding with light source (7); It is upper that described sample stage (1) is placed on lower shoe (2), can move freely; Described left side baffle plate (3) is provided with battery main switch (9), in parallel by electric wire with power switch (8) and light source (7) on top cover.
2. the fast imaging device of a kind of cadmium zinc telluride crystal wafer erosion profile according to claim 1, is characterized in that: described sample stage (1) material is lucite.
3. the fast imaging device of a kind of cadmium zinc telluride crystal wafer erosion profile according to claim 1, it is characterized in that: described light source (7) is 6 shot-lights, from left to right equidistantly install according to top cover length, the angle that regulates shot-light, can be irradiated on sample stage (1) light that each shot-light sends equably.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520979113.0U CN205246559U (en) | 2015-12-01 | 2015-12-01 | Tellurium zinc cadmium wafer corrodes quick image device of appearance |
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| CN201520979113.0U CN205246559U (en) | 2015-12-01 | 2015-12-01 | Tellurium zinc cadmium wafer corrodes quick image device of appearance |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105372266A (en) * | 2015-12-01 | 2016-03-02 | 中国科学院上海技术物理研究所 | Apparatus and method for fast imaging of cadmium zinc telluride wafer corrosion morphology |
| CN107192660A (en) * | 2017-05-27 | 2017-09-22 | 中国科学院上海技术物理研究所 | It is a kind of to be used for the apparatus and method that dynamic observes Cdl-x_Znx_Te chemical attack hole |
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2015
- 2015-12-01 CN CN201520979113.0U patent/CN205246559U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105372266A (en) * | 2015-12-01 | 2016-03-02 | 中国科学院上海技术物理研究所 | Apparatus and method for fast imaging of cadmium zinc telluride wafer corrosion morphology |
| CN107192660A (en) * | 2017-05-27 | 2017-09-22 | 中国科学院上海技术物理研究所 | It is a kind of to be used for the apparatus and method that dynamic observes Cdl-x_Znx_Te chemical attack hole |
| CN107192660B (en) * | 2017-05-27 | 2023-09-12 | 中国科学院上海技术物理研究所 | Device and method for dynamically observing tellurium-zinc-cadmium material chemical corrosion pits |
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