CN109706522A - A kind of polycrystalline silicon ingot or purifying furnace and its heat-insulation cage - Google Patents
A kind of polycrystalline silicon ingot or purifying furnace and its heat-insulation cage Download PDFInfo
- Publication number
- CN109706522A CN109706522A CN201910164185.2A CN201910164185A CN109706522A CN 109706522 A CN109706522 A CN 109706522A CN 201910164185 A CN201910164185 A CN 201910164185A CN 109706522 A CN109706522 A CN 109706522A
- Authority
- CN
- China
- Prior art keywords
- insulation board
- heat
- insulation
- sub
- cage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Silicon Compounds (AREA)
Abstract
This application discloses a kind of heat-insulation cages, including upper insulation board and around the side insulation board for the lower surface surrounding for being connected to upper insulation board, wherein, the side insulation board is formed by connecting by insulation board under flap type and the middle insulation board being connected with the upper insulation board, and insulation board is rotationally connected with the support rod being oppositely arranged by muti-piece and is made up of rotation with the sub- insulation board for adjusting heat loss under the flap type.The lower insulation board of heat-insulation cage is the insulation board of flap type in the application, during long brilliant, it does not need to promote or decline heat-insulation cage, the lower insulation board for only needing to adjust flap type radiates when needing to reinforce lower part, when balancing the radiation effects of heater, sub- insulation board is rotated to increase the gap between sub- insulation board, when needing to reduce heat dissipation capacity, sub- insulation board is rotated to reduce the gap between sub- insulation board, it is very convenient.In addition, the application also provides a kind of polycrystalline silicon ingot or purifying furnace having the above advantages.
Description
Technical field
This application involves technology field of polysilicon ingot equipment, more particularly to a kind of polycrystalline silicon ingot or purifying furnace and its heat-insulated
Cage.
Background technique
Polycrystalline silicon ingot or purifying furnace is mainly used for the mass production of solar-grade polysilicon ingot, it is solidifying using advanced polysilicon orientation
Gu technology will orient condensation-crystallization by special process after silicon material high-temperature fusion, to reach manufacture of solar cells polycrystalline
The requirement of silicon quality.It is a kind of suitable for long time continuous working, the intelligence of high-precision, high reliability, high degree of automation
Mass production equipment.
Existing polysilicon ingot furnace thermal field, heat-insulation cage, insulation quilt and its upper, middle and lower insulation board constitute an opposite envelope
The heat-insulation system closed is greater than argon gas and bottom heat radiation, the temperature of crucible edge due to the radiation effects of heat-insulation cage side heater
Much higher than central area, during long brilliant, the temperature difference of temperature and central area that crucible edge need to be made close to linear relationship,
To solve following problems: (1) larger close to the temperature of crucible edge and central area temperature difference, long crystal boundary face out-of-flatness, shadow
Still there are part silicon liquid in sound crystal quality, long brilliant four corners rear thoroughly in (2) center, need to increase the long crystalline substance in corner, extend casting
The ingot time, the decline of unit production capacity, the out-of-flatness in (3) long crystal boundary face, the fractional condensation effect of impurity is poor, can generate in slicing processes
Phenomena such as some impurity strias, broken string, increase production cost.
In the prior art, increase shield felt usually outside backplate, adjusted by the difference of control shield felt thickness, either
Increase shield felt in DS block lower part, long crystalline substance is controlled by promoting and declining heat-insulation cage, is dissipated referring to Fig. 1, but in an environment of high temperature
Heat is easy to appear uneven and bad regulation of radiating, and then not can effectively solve the problem during long crystalline substance.
Summary of the invention
The purpose of the application is to provide a kind of polycrystalline silicon ingot or purifying furnace and its heat-insulation cage, with scattering and disappearing for equal control heat.
In order to solve the above technical problems, the application provides a kind of heat-insulation cage, including upper insulation board and around being connected to guarantor
The side insulation board of the lower surface surrounding of warm plate, wherein the side insulation board by insulation board under flap type and with the upper heat preservation
The connected middle insulation board of plate is formed by connecting, and insulation board is rotationally connected with the support being oppositely arranged by muti-piece under the flap type
Bar is simultaneously made up of rotation with the sub- insulation board for adjusting heat loss.
Optionally, insulation board is made of the first heat preservation template die group and the second heat preservation template die group under the flap type.
Optionally, two opposite flanks of the sub- insulation board are the side with step shape, and the step
It is contrary.
Optionally, the upper insulation board and the side insulation board are the insulation board that carbonaceous thermal insulation material is formed.
Optionally, the connection type between the upper insulation board and the side insulation board is embedded.
The application also provides a kind of polycrystalline silicon ingot or purifying furnace, including crucible, top heater, side heater, graphite electrode,
Heat-insulation cage described in any of the above-described kind.
Optionally, the polycrystalline silicon ingot or purifying furnace further include:
Backplate positioned at the crucible side.
Optionally, the polycrystalline silicon ingot or purifying furnace further include:
Quartz sheath positioned at the graphite electrode periphery.
Heat-insulation cage provided herein, including upper insulation board and around the side for the lower surface surrounding for being connected to upper insulation board
Insulation board, wherein the side insulation board is connect by insulation board under flap type and the middle insulation board being connected with the upper insulation board
It forms, and insulation board is rotationally connected with the support rod being oppositely arranged and by rotation by muti-piece to adjust heat under the flap type
The lost sub- insulation board composition of amount.The lower insulation board of heat-insulation cage is the insulation board of flap type in the application, is protected under flap type
Warm plate is made of the sub- insulation board that muti-piece rotates, and during long brilliant, does not need to promote or decline heat-insulation cage, it is only necessary to adjust
The lower insulation board of flap type when balancing the radiation effects of heater, rotates sub- insulation board when needing to reinforce lower part heat dissipation
To increase the gap between sub- insulation board, when needing to reduce heat dissipation capacity, sub- insulation board is rotated to reduce the gap between sub- insulation board,
It is very convenient, the temperature of crucible edge and the temperature difference of central area can be effectively controlled, effectively solves to occur during long crystalline substance
The above problem, and can to avoid increase protect felt, reduce loss.In addition, the application also provide it is a kind of have the above advantages it is more
Crystal silicon ingot furnace.
Detailed description of the invention
It, below will be to embodiment or existing for the clearer technical solution for illustrating the embodiment of the present application or the prior art
Attached drawing needed in technical description is briefly described, it should be apparent that, the accompanying drawings in the following description is only this Shen
Some embodiments please for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is heat-insulation cage structural schematic diagram in the prior art；
Fig. 2 is a kind of heat-insulation cage structural schematic diagram provided by the embodiment of the present application；
Fig. 3 is the structural schematic diagram of another kind heat-insulation cage provided by the embodiment of the present application；
Fig. 4 is sub- insulation board front view provided by the embodiment of the present application；
Fig. 5 is sub- insulation board side view provided by the embodiment of the present application；
Fig. 6 is sub- insulation board top view provided by the embodiment of the present application.
Specific embodiment
In order to make those skilled in the art more fully understand application scheme, with reference to the accompanying drawings and detailed description
The application is described in further detail.Obviously, described embodiments are only a part of embodiments of the present application, rather than
Whole embodiments.Based on the embodiment in the application, those of ordinary skill in the art are not making creative work premise
Under every other embodiment obtained, shall fall in the protection scope of this application.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Just as described in the background section, increase shield felt usually outside backplate, or increase shield felt in DS block lower part,
Long crystalline substance is controlled by promoting and declining heat-insulation cage, but heat dissipation is easy to appear the uneven and bad tune that radiates in an environment of high temperature
Control, and then not can effectively solve the problem during long crystalline substance.
In view of this, this application provides a kind of heat-insulation cage, referring to FIG. 2, Fig. 2 is one provided by the embodiment of the present application
The structural schematic diagram of heat-insulation cage is planted, which includes upper insulation board 1 and the circular lower surface surrounding for being connected to insulation board 1
Side insulation board 2, wherein the side insulation board 2 is by insulation board 22 under flap type and the middle heat preservation being connected with the upper insulation board 1
Plate 21 is formed by connecting, and insulation board 22 is rotationally connected with the support rod being oppositely arranged by muti-piece and by turning under the flap type
It is dynamic to be formed with the sub- insulation board for adjusting heat loss.
It should be noted that heat-insulation cage further includes rigid body support frame (Fig. 2 positioned at 2 outside of upper insulation board 1 and side insulation board
In be not shown), play the role of supporting upper insulation board 1 and side insulation board 2.
It should also be noted that, being not specifically limited in the present embodiment to the thickness of upper insulation board 1, depend on the circumstances.Together
Reason, the thickness of opposite side insulation board 2 are also not specifically limited, can sets itself.
Preferably, the connection type between the upper insulation board 1 and the side insulation board 2 is embedded.Embedded connection
So that heat-insulation cage is more closed, increase heat insulation effect, reduces energy consumption.
Heat-insulation cage provided herein, including upper insulation board 1 and around the lower surface surrounding for being connected to upper insulation board 1
Side insulation board 2, wherein the side insulation board 2 is by insulation board 22 under flap type and the middle heat preservation being connected with the upper insulation board 1
Plate 21 is formed by connecting, and insulation board 22 is rotationally connected with the support rod being oppositely arranged by muti-piece and by turning under the flap type
It is dynamic to be formed with the sub- insulation board for adjusting heat loss.In the application the lower insulation board of heat-insulation cage be flap type insulation board, hundred
Insulation board 22 is made of the sub- insulation board that muti-piece rotates under leaf window type, during long brilliant, does not need to be promoted or declined heat-insulated
Cage, it is only necessary to which the lower insulation board for adjusting flap type balances the radiation effects of heater when needing to reinforce lower part heat dissipation
When, sub- insulation board is rotated to increase the gap between sub- insulation board, when needing to reduce heat dissipation capacity, rotates sub- insulation board to reduce son
Gap between insulation board, it is very convenient, the temperature of crucible edge and the temperature difference of central area can be effectively controlled, is effectively solved
The problem during long crystalline substance, and felt can be protected to avoid increasing, reduce loss.
Referring to FIG. 3, Fig. 3 is the structural schematic diagram of another kind heat-insulation cage provided by the embodiment of the present application.
On the basis of the above embodiments, in one embodiment of the application, under the flap type insulation board 22 by
First heat preservation template die group 221 and the second heat preservation template die group 222 form.
Specifically, the first heat preservation template die group 221 and the second heat preservation template die group 222 keep the temperature board group by one piece or muti-piece
At, and the first heat preservation template die group 221 and the second heat preservation template die group 222 are separation, it can individually control the first heat preservation
Template die group 221 and second keeps the temperature turning on or off for template die group 222.
It should be noted that the first heat preservation template die group 221 and the relatively middle guarantor of the second heat preservation template die group 222 in the present embodiment
The position of warm plate 21 without limitation, for example, can be the first heat preservation template die group 221 close to middle insulation board 21, the second heat preservation template die
Group 222 is located at the lower section of the first heat preservation template die group 221 or the second heat preservation template die group 222 is kept the temperature close to middle insulation board 21, first
Template die group 221 is located at the lower section of the second heat preservation template die group 222.
Insulation board 22 under flap type is arranged to separated first heat preservation template die group 221 and second and keeps the temperature template die
Purpose is the temperature gradient during smooth long crystalline substance, and is regulated and controled to the temperature of silicon ingot different zones, and crystal just starts to give birth to
When long, can only opening insulation board 22 under flap type, close to the heat preservation template die group of lower part, the heat preservation template die group on top closed
It closes, with the growth of crystal, the increase of crystal height, close to lower part heat preservation template die group closure, top keeps the temperature template die group and opens, to the greatest extent
It is likely to be breached environment of crystal growth controllable state.
Fig. 4 to fig. 6 is please referred to, Fig. 4 is the front view of sub- insulation board, and Fig. 5 is the heat preservation of son provided by the embodiment of the present application
Plate side view；Fig. 6 is sub- insulation board top view provided by the embodiment of the present application.
Preferably, on the basis of the above embodiments, in one embodiment of the application, two of the sub- insulation board
Opposite flank is the side with step shape, and the step is contrary.Purpose is protected when closing under flap type
When warm plate 22, it is fitted close between adjacent sub- insulation board, plays better heat insulation effect.
It should be noted that in the present embodiment without limitation to the height of the step on two opposite flanks, guaranteeing by force
It, can self-setting under the premise of degree.
Preferably, based on any of the above embodiments, in one embodiment of the application, the upper insulation board 1
It is the insulation board that carbonaceous thermal insulation material is formed with the side insulation board 2.
It should be noted that being not specifically limited in the present embodiment to carbonaceous thermal insulation material, depend on the circumstances.For example, carbon
Quality guarantee adiabator can be C/C composite material, or be graphite charcoal felt.
The application also provides a kind of polycrystalline silicon ingot or purifying furnace, including crucible, top heater, side heater, graphite electrode,
Any of the above-described heat-insulation cage as described in the examples.
Polycrystalline silicon ingot or purifying furnace provided herein does not need to promote or decline heat-insulation cage during long brilliant, it is only necessary to
The lower insulation board for adjusting flap type when balancing the radiation effects of heater, rotates son and protects when needing to reinforce lower part heat dissipation
Warm plate is to increase the gap between sub- insulation board, when needing to reduce heat dissipation capacity, rotates sub- insulation board to reduce between sub- insulation board
Gap, it is very convenient, the temperature of crucible edge and the temperature difference of central area can be effectively controlled, effectively during the long crystalline substance of solution
The problem.
On the basis of upper embodiment, in the application one embodiment, polycrystalline silicon ingot or purifying furnace further include:
Backplate positioned at the crucible side, since crucible is expanded in temperature very Gao Shiyi, temperature reduces too fast
It is easy to happen cracking again, backplate can play the role of protecting crucible.
On the basis of upper embodiment, in the application one embodiment, polycrystalline silicon ingot or purifying furnace further include:
Quartz sheath positioned at the graphite electrode periphery, it is long brilliant since there are gaps between graphite electrode and electrode hole
A series of impurity volatile matters can be generated in the process, and most of volatile matter can be siphoned away by gas vent by air pump, but still have part to wave
Hair object remains in furnace and remains essentially in the gap of graphite electrode and electrode hole, increases quartz sheath, can effectively reduce
The residual of volatile matter reduces the probability of table sparking, reduces the probability that safety accident occurs.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with it is other
The difference of embodiment, same or similar part may refer to each other between each embodiment.For being filled disclosed in embodiment
For setting, since it is corresponded to the methods disclosed in the examples, so being described relatively simple, related place is referring to method part
Explanation.
Polycrystalline silicon ingot or purifying furnace and its heat-insulation cage provided herein are described in detail above.It is used herein
The principle and implementation of this application are described for specific case, and the above embodiments are only used to help understand originally
The method and its core concept of application.It should be pointed out that for those skilled in the art, not departing from this Shen
Please under the premise of principle, can also to the application, some improvement and modification can also be carried out, these improvement and modification also fall into the application power
In the protection scope that benefit requires.
Claims (8)
1. a kind of heat-insulation cage, which is characterized in that including upper insulation board and around the side for the lower surface surrounding for being connected to upper insulation board
Insulation board, wherein the side insulation board is connect by insulation board under flap type and the middle insulation board being connected with the upper insulation board
It forms, and insulation board is rotationally connected with the support rod being oppositely arranged and by rotation by muti-piece to adjust heat under the flap type
The lost sub- insulation board composition of amount.
2. heat-insulation cage as described in claim 1, which is characterized in that insulation board is by the first heat preservation template die group under the flap type
With the second heat preservation template die group composition.
3. heat-insulation cage as claimed in claim 2, which is characterized in that two opposite flanks of the sub- insulation board are with platform
The side of stepped shape, and the step is contrary.
4. heat-insulation cage as described in any one of claims 1 to 3, which is characterized in that the upper insulation board and the side insulation board
It is the insulation board that carbonaceous thermal insulation material is formed.
5. heat-insulation cage as claimed in claim 4, which is characterized in that the connection between the upper insulation board and the side insulation board
Mode is embedded.
6. a kind of polycrystalline silicon ingot or purifying furnace, which is characterized in that including crucible, top heater, side heater, graphite electrode, such as
Heat-insulation cage described in any one of claim 1 to 5.
7. polycrystalline silicon ingot or purifying furnace as claimed in claim 6, which is characterized in that further include:
Backplate positioned at the crucible side.
8. polycrystalline silicon ingot or purifying furnace as claimed in claim 7, which is characterized in that further include:
Quartz sheath positioned at the graphite electrode periphery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910164185.2A CN109706522A (en) | 2019-03-05 | 2019-03-05 | A kind of polycrystalline silicon ingot or purifying furnace and its heat-insulation cage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910164185.2A CN109706522A (en) | 2019-03-05 | 2019-03-05 | A kind of polycrystalline silicon ingot or purifying furnace and its heat-insulation cage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109706522A true CN109706522A (en) | 2019-05-03 |
Family
ID=66265692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910164185.2A Pending CN109706522A (en) | 2019-03-05 | 2019-03-05 | A kind of polycrystalline silicon ingot or purifying furnace and its heat-insulation cage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109706522A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111945222A (en) * | 2020-08-14 | 2020-11-17 | 刘穗 | Ingot furnace with tail gas treatment function |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051679A (en) * | 2010-12-29 | 2011-05-11 | 浙江昱辉阳光能源有限公司 | Hot door and polycrystalline ingot furnace |
| US20130036769A1 (en) * | 2010-04-29 | 2013-02-14 | Korea Research Institute Of Chemical Technology | High-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell |
| CN102965727A (en) * | 2012-12-10 | 2013-03-13 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and casting method thereof |
| CN105780112A (en) * | 2016-05-25 | 2016-07-20 | 晶科能源有限公司 | Ingot casting graphite guard board and manufacturing method thereof |
| CN205741281U (en) * | 2016-07-13 | 2016-11-30 | 北京京仪集团涿鹿光伏材料有限公司 | A kind of graphite electrode insulation structure of polycrystalline ingot furnace |
-
2019
- 2019-03-05 CN CN201910164185.2A patent/CN109706522A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130036769A1 (en) * | 2010-04-29 | 2013-02-14 | Korea Research Institute Of Chemical Technology | High-output apparatus for manufacturing a polycrystal silicon ingot for a solar cell |
| CN102051679A (en) * | 2010-12-29 | 2011-05-11 | 浙江昱辉阳光能源有限公司 | Hot door and polycrystalline ingot furnace |
| CN102965727A (en) * | 2012-12-10 | 2013-03-13 | 英利能源（中国）有限公司 | Polycrystalline silicon ingot and casting method thereof |
| CN105780112A (en) * | 2016-05-25 | 2016-07-20 | 晶科能源有限公司 | Ingot casting graphite guard board and manufacturing method thereof |
| CN205741281U (en) * | 2016-07-13 | 2016-11-30 | 北京京仪集团涿鹿光伏材料有限公司 | A kind of graphite electrode insulation structure of polycrystalline ingot furnace |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111945222A (en) * | 2020-08-14 | 2020-11-17 | 刘穗 | Ingot furnace with tail gas treatment function |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7025395B2 (en) | Reflective screen of single crystal growth furnace and single crystal growth furnace | |
| CN204825129U (en) | Thermal field structure of high -efficient polycrystalline silicon ingot furnace | |
| CN105492666A (en) | Device for shielding heat, device for growing ingot comprising same, and method for growing ingot using same | |
| CN207109156U (en) | A kind of silicon carbide crystal growing device | |
| CN102978687B (en) | Crystal growth method of polycrystalline silicon ingot | |
| CN104372399A (en) | Single crystal silicon finishing method and single crystal silicon preparing method | |
| CN208308999U (en) | A kind of SiC single crystal grower improving raw material service efficiency | |
| CN102965727B (en) | Polycrystalline silicon ingot and casting method thereof | |
| CN102268729A (en) | 450 type ingot furnace and ingot casting process thereof | |
| CN109706522A (en) | A kind of polycrystalline silicon ingot or purifying furnace and its heat-insulation cage | |
| CN108103575A (en) | A kind of preparation method and its device of low stress single-crystal silicon carbide | |
| CN107587194B (en) | Polycrystalline silicon ingot casting furnace and method | |
| CN205205273U (en) | Ingot furnace thermal field device with adjustable connecting rod | |
| CN206070039U (en) | A kind of thermal field structure of single crystal silicon ingot furnace | |
| CN113502531A (en) | Multi-partition-zone ingot casting monocrystalline silicon growth equipment and method with adjustable vertical temperature gradient | |
| CN104451874A (en) | Preparation method of ingot furnace and silicon ingot | |
| CN207109157U (en) | A kind of adjustable Silicon carbide crystal growth furnace of thermal field | |
| CN103320848B (en) | A kind of polycrystalline ingot furnace | |
| KR101139846B1 (en) | The apparatus equipped with effective insulating/protection plates for manufacturing of the polycrystalline silicon ingot for solar cell | |
| Sundaramahalingam et al. | Transient simulation on the growth of mono-like silicon ingot in DS process using crucible with Plano-concave bottom for PV applications | |
| CN106012021A (en) | Seed crystal shaft and method for liquid phase growth of silicon carbide | |
| CN213327933U (en) | Monocrystalline silicon ingot furnace | |
| CN206768273U (en) | A kind of semiconductor single-crystal growth thermal field | |
| CN110387579A (en) | A kind of method and casting single crystal silicon ingot using octagon ingot casting thermal field casting single crystal | |
| CN206052208U (en) | A kind of seed shaft of scalable growth of silicon carbide thermograde |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190503 |