CN109698194A - A kind of Schottky clamper SCR device for ESD protection - Google Patents
A kind of Schottky clamper SCR device for ESD protection Download PDFInfo
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- CN109698194A CN109698194A CN201811617793.6A CN201811617793A CN109698194A CN 109698194 A CN109698194 A CN 109698194A CN 201811617793 A CN201811617793 A CN 201811617793A CN 109698194 A CN109698194 A CN 109698194A
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- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000015556 catabolic process Effects 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000012423 maintenance Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 3
- 230000036039 immunity Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The present invention provides a kind of Schottky clamper SCR device for ESD protection, it include: P type substrate, p-well region and n-well region, the first n+ implanted layer and the first p+ implanted layer inside p-well region, the 3rd n+ implanted layer and the 2nd p+ implanted layer inside n-well region, the 2nd n+ implanted layer for reducing breakdown voltage being connected across between n-well region and p-well region, first metal aperture is in contact with the 3rd n+ implanted layer, second metal aperture is in contact with the 2nd p+ implanted layer, third metal aperture is in contact with the first p+ implanted layer, 4th metal aperture is in contact with the first n+ implanted layer, fifth metal hole directly connects to forming Schottky contacts with p-well region, constitute Schottky diode；The present invention weakens the positive feedback process inside SCR structure using additional Schottky diode, and the positive current feedback of SCR is made to have the tendency that decrease, so that SCR maintenance voltage rises, improves the latch-up immunity of device.
Description
Technical field
The invention belongs to Electronics Science and Technology fields, are mainly used for electrostatic leakage (Electro Static
Discharge, referred to as ESD) guard technology.It is exactly a kind of method by Schottky diode clamper, realizes SCR
The promotion of device maintenance voltage causes the technology of latch-up to avoid ESD.
Background technique
It is pressed in low pressure, in the protection low frequency applications of high pressure ESD, the latch-up (latch-up effect) of ESD device
It is the major issue of constraint device performance all the time.For ESD device itself, promoting maintenance voltage Vh is then that latch is avoided to imitate
Answer most reliable method.In this context, the ESD protection technology of numerous high Vh is suggested.This kind of technology is broadly divided into two classes:
1) degeneration of parasitic transistor；2) stacking of device.For super-pressure application, device stack technology is a kind of good scheme,
It is not only able to achieve very high Vh, additionally it is possible to guarantee the ESD electric current robustness of overall structure.But the ESD performance of this technology is strong
The strong performance for relying on stackable unit.Therefore, what the performance design of individual unit was shown is particularly significant.
Vh is promoted for unit component, the present invention proposes a kind of simple effective method.On the one hand, the program is not only mentioning
Trigger voltage Vt1 is not changed while rising Vh, on the other hand, it is strong to prevent to be able to suppress the current convergence effect at device both ends
Resistance caused by kirk effect increases.In addition, the present invention does not need to increase any process flow and light shield quantity, it is a kind of low
Cost, efficient new E SD protective device structure.
Summary of the invention
The technical problem to be solved by the present invention is coming temporarily in noise voltage or esd pulse voltage, which can be shown
Higher than the maintenance voltage of supply voltage, thus immune latch risk and noise jamming.
For achieving the above object, technical solution of the present invention is as follows:
A kind of Schottky clamper SCR device for ESD protection, comprising: the p trap above P type substrate 01, P type substrate 01
Area 02 and n-well region 03, and p-well region 02 and n-well region 03 are tangent, the first n+ implanted layer 21 and the first p+ inside p-well region 02 are infused
Enter layer 11, the 3rd n+ implanted layer 23 and the 2nd p+ implanted layer 12 inside n-well region 03, be connected across n-well region 03 and p-well region 02 it
Between the 2nd n+ implanted layer 22 for reducing breakdown voltage, the first metal aperture 31 is in contact with the 3rd n+ implanted layer 23, second
Metal aperture 32 is in contact with the 2nd p+ implanted layer 12, and third metal aperture 33 is in contact with the first p+ implanted layer 11, the 4th metal aperture
34 are in contact with the first n+ implanted layer 21, and fifth metal hole 35 directly connects to forming Schottky contacts with p-well region 02, constitute p-type
Schottky diode 103.
The equivalent circuit of this device is as shown in Figure 4.Wherein, first resistor 002 is p-well region 02, and second resistance 003 is n trap
Area 03, PNP triode 101 are made of the 2nd p+ implanted layer 12, n-well region 03 and p-well region 02.NPN triode 102 is infused by the first n+
Enter layer 21, p-well region 02 and n-well region 03 are constituted.P-type Schottky diode 103 is to form Xiao by fifth metal hole 35 and p-well region 02
Te Ji contacts to be formed.
It is preferred that being equipped with the 6th metal aperture 36, the 6th metal aperture above the left side n-well region of the second metal aperture 32
36 contact to form N-type Schottky diode 104 with n-well region 03.
For achieving the above object, the Schottky clamper SCR device the present invention also provides another kind for ESD protection,
It include: the p-well region 02 and n-well region 03 of P type substrate 01,01 top of P type substrate, and p-well region 02 and n-well region 03 are tangent, in p-well region
02 tangent the first n+ implanted layer 21 and the first p+ implanted layer 11 in inside, the 3rd n+ implanted layer 23 inside n-well region 03 and the
Two p+ implanted layers 12, the 2nd n+ implanted layer 22 for reducing breakdown voltage being connected across between n-well region 03 and well region 02, first
Metal aperture 31 is in contact with the 3rd n+ implanted layer 23, and the second metal aperture 32 is in contact with the 2nd p+ implanted layer 12, third metal aperture
33 are in contact with the first p+ implanted layer 11, and the 4th metal aperture 34 is in contact with the first n+ implanted layer 21, left in the second metal aperture 32
Side is equipped with the 6th metal aperture 36, and the 6th metal aperture 36 contacts to form N-type Schottky diode 104 with n-well region 03.
The invention has the benefit that a kind of ESD of the anti-latch SCR device proposed by the present invention for low pressure 5V technique is protected
Shield.The positive feedback process inside SCR structure is weakened using additional Schottky diode, makes the positive current feedback of SCR
Have the tendency that decrease, so that SCR maintenance voltage rises, improves the latch-up immunity of device.
Detailed description of the invention
Fig. 1 is tradition MLSCR structure.
Fig. 2 is tradition MLSCR equivalent circuit.
Fig. 3 is the Schottky clamper SCR device structure of the embodiment of the present invention 1.
Fig. 4 is the equivalent circuit of the embodiment of the present invention 1.
Fig. 5 is the performance simulation comparison of structure of the invention and traditional structure.
Fig. 6 is the Schottky clamper SCR device structure of the embodiment of the present invention 2.
Fig. 7 is the equivalent circuit of the embodiment of the present invention 2.
Fig. 8 is the Schottky clamper SCR device structure of the embodiment of the present invention 3.
Fig. 9 is the equivalent circuit of the embodiment of the present invention 3.
01 is P type substrate, and 02 is p-well region, and 002 is first resistor, and 003 is second resistance, and 03 is n-well region, and 11 be the first p
+ implanted layer, 23 be the 3rd n+ implanted layer, and 12 be the 2nd p+ implanted layer, and 21 be the first n+ implanted layer, and 22 be the 2nd n+ implanted layer,
31 be the first metal aperture, 32 be the second metal aperture, 33 be third metal aperture, 34 be the 4th metal aperture, 35 be fifth metal hole, 36
It is PNP triode for the 6th metal aperture, 101,102 be NPN triode, and 103 be p-type Schottky diode, and 104 be N-type Xiao Te
Based diode.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Embodiment 1
As shown in figure 3, a kind of Schottky clamper SCR device for ESD protection, comprising: P type substrate 01, P type substrate 01
The p-well region 02 and n-well region 03 of top, and p-well region 02 and n-well region 03 are tangent, the first n+ implanted layer 21 inside p-well region 02 with
First p+ implanted layer 11, the 3rd n+ implanted layer 23 and the 2nd p+ implanted layer 12 inside n-well region 03, is connected across n-well region 03 and p
The 2nd n+ implanted layer 22 for reducing breakdown voltage between well region 02, the first metal aperture 31 connect with the 3rd n+ implanted layer 23
Touching, the second metal aperture 32 are in contact with the 2nd p+ implanted layer 12, and third metal aperture 33 is in contact with the first p+ implanted layer 11, and the 4th
Metal aperture 34 is in contact with the first n+ implanted layer 21, and fifth metal hole 35 directly connects to forming Schottky contacts with p-well region 02, structure
At p-type Schottky diode 103.
The equivalent circuit of this device is as shown in Figure 4.Wherein, first resistor 002 is p-well region 02, and second resistance 003 is n trap
Area 03, PNP triode 101 are made of the 2nd p+ implanted layer 12, n-well region 03 and p-well region 02.NPN triode 102 is infused by the first n+
Enter layer 21, p-well region 02 and n-well region 03 are constituted.P-type Schottky diode 103 is to form Xiao by fifth metal hole 35 and p-well region 02
Te Ji contacts to be formed.
The device and protected port are used in parallel.
When noise pulse is when appearing in by protection I/O mouth, which can make to be binded up one's hair by the current collection of PNP triode 101
Raw snowslide, electric current can flow through first resistor 002, second resistance 003 at this time.Pressure drop can be generated in n-well region 03 and p-well region 02, when
When the voltage reaches the cut-in voltage about 0.4V of p-type Schottky diode 103, Schottky diode is opened.SCR device at this time
The emitter junction of NPN pipe will be clamped and positive feedback can not occur in part.Due to the clamping action of Schottky diode, positive feedback
It is suppressed.The maintenance voltage Vh of device will be obviously improved at this time.To achieve the purpose that anti-latch-up.Further, since p-type
Schottky diode 103 can form a potential barrier about 0.4V on 02 surface of p-well region, this makes 21 edge of the first n+ implanted layer of cathode
Current density reduce.This increases resistance caused by optimization kirk effect very good.
In order to prove the working principle of the device, specific simulation result is as shown in Figure 5, it can be seen that Novel Schottky
Clamper SCR structure has higher Vh and higher saturation current.The current density for comparing 21 right hand edge of the first n+ implanted layer can
To find out, the current density of new device here is smaller to delay kirk effect to occur, this is the high master of saturation current
Want reason.
When esd pulse is appeared in by protection VDD rail, which, also can be by power supply to ground due to identical working principle
Current potential clamper more than supply voltage.At this point, work as ESD blackout, since supply voltage is less than the maintenance voltage of the structure,
Therefore the structure will automatic shutoff to reach the case where avoiding latch from damaging.
Embodiment 2
As shown in Figure 6: the present embodiment working principle is same as Example 1.Institute the difference is that, will be in embodiment 1
Fifth metal hole 35 cancels, and the 6th new metal aperture 36 is made on the left of the second metal aperture 32 and contacts to form N-type Xiao with n-well region 03
Special based diode 104.
As shown in fig. 7, a N-type Schottky diode 104 in parallel at the emitter junction of PNP triode 101 in equivalent circuit.
Its working range and principle are same as Example 1.
Embodiment 3
As shown in Figure 8: the present embodiment working principle is same as Example 1.Institute the difference is that, will be in embodiment 1
Fifth metal hole 35 retains, and makes the 6th new metal aperture 36 on the left of the second metal aperture 32 and contact to form Xiao with n-well region 03
Special based diode.It is embodied in equivalent circuit as shown in figure 9, a N-type Schottky in parallel at the emitter junction of PNP triode 101
Diode 104.A p-type Schottky diode 103 in parallel at the emitter junction of NPN triode 102.Its working range and principle with
Embodiment one is identical.
In conclusion the invention proposes a kind of Schottky clamper SCR structures for ESD protection.The structure is due to attached
The Schottky diode added has certain inhibiting effect to the positive feedback effect of SCR, so that when ESD electric current is released in SCR unlatching
Maintenance voltage rise, reaching prevents the latch under I/O mouthfuls of noise false triggering interference and power supply power clamp mode from imitating
It answers.Edge current concentration effect can also be avoided by Schottky barrier diode simultaneously, promote saturation current.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, all those of ordinary skill in the art are completed without departing from the spirit and technical ideas disclosed in the present invention
All equivalent modifications or change, should be covered by the claims of the present invention.
Claims (3)
1. a kind of Schottky clamper SCR device for ESD protection characterized by comprising P type substrate (01), P type substrate
(01) p-well region (02) and n-well region (03) above, and p-well region (02) and n-well region (03) are tangent, p-well region (02) it is internal the
One n+ implanted layer (21) and the first p+ implanted layer (11), in the 3rd internal n+ implanted layer (23) of n-well region (03) and the 2nd p+ note
Enter layer (12), the 2nd n+ implanted layer (22) for reducing breakdown voltage being connected across between n-well region (03) and p-well region (02),
First metal aperture (31) is in contact with the 3rd n+ implanted layer (23), and the second metal aperture (32) connects with the 2nd p+ implanted layer (12)
Touching, third metal aperture (33) are in contact with the first p+ implanted layer (11), the 4th metal aperture (34) and the first n+ implanted layer (21) phase
Contact, fifth metal hole (35) directly connect to forming Schottky contacts with p-well region (02), constitute p-type Schottky diode
(103)。
2. a kind of Schottky clamper SCR device for ESD protection according to claim 1, it is characterised in that: second
It is equipped with the 6th metal aperture (36) above the left side n-well region of metal aperture (32), the 6th metal aperture (36) contacts formation with n-well region (03)
N-type Schottky diode (104).
3. a kind of Schottky clamper SCR device for ESD protection, it is characterised in that: include: P type substrate (01), P type substrate
(01) p-well region (02) and n-well region (03) above, and p-well region (02) and n-well region (03) are tangent, it is internal tangent in p-well region (02)
The first n+ implanted layer (21) and the first p+ implanted layer (11), in n-well region (03) internal the 3rd n+ implanted layer (23) and the 2nd p
+ implanted layer (12), the 2nd n+ implanted layer for reducing breakdown voltage being connected across between n-well region (03) and well region (02)
(22), the first metal aperture (31) is in contact with the 3rd n+ implanted layer (23), the second metal aperture (32) and the 2nd p+ implanted layer (12)
It is in contact, third metal aperture (33) is in contact with the first p+ implanted layer (11), the 4th metal aperture (34) and the first n+ implanted layer
(21) it is in contact, the 6th metal aperture (36) is equipped on the left of the second metal aperture (32), the 6th metal aperture (36) connects with n-well region (03)
Touching forms N-type Schottky diode (104).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811617793.6A CN109698194B (en) | 2018-12-28 | 2018-12-28 | Schottky clamp SCR device for ESD protection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811617793.6A CN109698194B (en) | 2018-12-28 | 2018-12-28 | Schottky clamp SCR device for ESD protection |
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| CN109698194A true CN109698194A (en) | 2019-04-30 |
| CN109698194B CN109698194B (en) | 2021-02-12 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092076A (en) * | 2019-12-27 | 2020-05-01 | 电子科技大学 | High-maintenance-voltage transverse SCR device |
| CN114242717A (en) * | 2021-12-15 | 2022-03-25 | 北京奕斯伟计算技术有限公司 | Bidirectional silicon controlled rectifier and circuit structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201041806Y (en) * | 2007-03-05 | 2008-03-26 | 浙江大学 | An ESD protection part for enlarging valid pass area of static current |
| CN101699625A (en) * | 2009-10-28 | 2010-04-28 | 苏州博创集成电路设计有限公司 | High trigger current SCR and ESD protective device |
| US20130341676A1 (en) * | 2012-06-20 | 2013-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Increased Holding Voltage in Silicon Controlled Rectifiers for ESD Protection |
| CN108400136A (en) * | 2017-02-08 | 2018-08-14 | 格芯公司 | FINFET ESD devices with Schottky diode |
| CN108520875A (en) * | 2018-06-07 | 2018-09-11 | 湖南静芯微电子技术有限公司 | A kind of high maintenance voltage NPNPN type bidirectional thyristor electrostatic protection devices |
-
2018
- 2018-12-28 CN CN201811617793.6A patent/CN109698194B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201041806Y (en) * | 2007-03-05 | 2008-03-26 | 浙江大学 | An ESD protection part for enlarging valid pass area of static current |
| CN101699625A (en) * | 2009-10-28 | 2010-04-28 | 苏州博创集成电路设计有限公司 | High trigger current SCR and ESD protective device |
| US20130341676A1 (en) * | 2012-06-20 | 2013-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Increased Holding Voltage in Silicon Controlled Rectifiers for ESD Protection |
| US20150137174A1 (en) * | 2012-06-20 | 2015-05-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and Apparatus for Increased Holding Voltage in Silicon Controlled Rectifiers for ESD Protection |
| CN108400136A (en) * | 2017-02-08 | 2018-08-14 | 格芯公司 | FINFET ESD devices with Schottky diode |
| CN108520875A (en) * | 2018-06-07 | 2018-09-11 | 湖南静芯微电子技术有限公司 | A kind of high maintenance voltage NPNPN type bidirectional thyristor electrostatic protection devices |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111092076A (en) * | 2019-12-27 | 2020-05-01 | 电子科技大学 | High-maintenance-voltage transverse SCR device |
| CN114242717A (en) * | 2021-12-15 | 2022-03-25 | 北京奕斯伟计算技术有限公司 | Bidirectional silicon controlled rectifier and circuit structure |
| CN114242717B (en) * | 2021-12-15 | 2023-02-21 | 北京奕斯伟计算技术股份有限公司 | Bidirectional silicon controlled rectifier and circuit structure |
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