CN109687273A - A kind of laser - Google Patents
A kind of laser Download PDFInfo
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- CN109687273A CN109687273A CN201910005620.7A CN201910005620A CN109687273A CN 109687273 A CN109687273 A CN 109687273A CN 201910005620 A CN201910005620 A CN 201910005620A CN 109687273 A CN109687273 A CN 109687273A
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- 230000003287 optical effect Effects 0.000 claims abstract description 82
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- 238000005086 pumping Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000002834 transmittance Methods 0.000 claims description 13
- 238000002310 reflectometry Methods 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 7
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
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- 230000037431 insertion Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
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- 241000931526 Acer campestre Species 0.000 description 1
- 206010027514 Metrorrhagia Diseases 0.000 description 1
- QXSDKTDYKUJBRX-UHFFFAOYSA-K [O-]P([O-])([O-])=O.O.[Ti+4].[Rb+] Chemical compound [O-]P([O-])([O-])=O.O.[Ti+4].[Rb+] QXSDKTDYKUJBRX-UHFFFAOYSA-K 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08018—Mode suppression
- H01S3/08022—Longitudinal modes
- H01S3/08031—Single-mode emission
- H01S3/08036—Single-mode emission using intracavity dispersive, polarising or birefringent elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
This application discloses a kind of laser, including optical resonator, the optical resonator includes input terminal and output coupling mirror, and the input terminal is coated with the optical film for penetrating excitation laser and oscillating laser being made to form reflection；It is intracavitary in the optical resonance, laser crystal, polarizing film, electro-optic Q-switched crystal are disposed with along the direction of the input terminal to the output coupling mirror；Wherein, the output coupling mirror is planoconvex lens, and the convex surface of the planoconvex lens is towards the optical resonator.The laser obtains a small number of longitudinal modes even single longitudinal mode laser using the short bore configurations combination plano-convex output coupling mirror of optical resonator and exports, and realizes high repetition frequency using RTP crystal, while laser pulse width can accomplish very narrow (1ns-10ns magnitude).The laser of the application can provide the basic frequency laser of Gao Zhongying, narrow spaces, narrow linewidth, high light beam quality.
Description
Technical field
This application involves a kind of lasers, belong to laser technology field.
Background technique
Ultraviolet laser is with a wide range of applications in increasing material manufacturing, Precision Machining field, processes phase with common laser
Than ultraviolet laser processing directly destroys material molecule key by high-energy photon, rather than acts on by common " heat fusing " to add
Work can substantially reduce the heat effect in process, to greatly improve machining accuracy and quality, be able to satisfy to many materials
The requirement of fine highly-efficient processing, especially precision manufactureing, transparent material processing, composite processing, special material in the micron-scale
Processing etc. has unrivaled advantage.
The processing efficiency of ultraviolet laser accurate processing and manufacturing is related to used laser light source intensity and repetition rate, high
Mean power, high repetition frequency, narrow spaces laser light source can bring high material processing efficiency.And super-narrow line width laser can be with
Obtain smooth laser pulse, hence it is evident that reduce damage of the laser to optical component.Manufacture is with ultraviolet laser usually by fundamental frequency
Light is obtained by carrying out frequency tripling or quadruple after multiple power amplification.It is in the prior art usually to use a high beam matter
The continuous narrow linewidth seed laser of amount, intercepts train of pulse from continuous laser by the method for acousto-optic or electric light to realize.It should
Laser realizes that process is more complicated, and volume is relatively large, and stability is also relatively poor.
Therefore, Gao Zhongying, the narrow spaces, narrow linewidth, bloom of fundamental frequency light how are realized by simple, convenient and fast technological means
Beam quality is a technical problem to be solved urgently.
Summary of the invention
According to the one aspect of the application, a kind of laser is provided, which utilizes the short cavity knot of optical resonator
Structure combination plano-convex output coupling mirror obtains the even single longitudinal mode laser output of a small number of longitudinal modes, realizes high repetition frequency using RTP crystal,
Laser pulse width can accomplish very narrow (1ns-10ns magnitude) simultaneously.The laser of the application can provide Gao Zhongying, narrow spaces, narrow line
Wide, high light beam quality basic frequency laser.
A kind of laser, including optical resonator, the optical resonator include input terminal and output coupling mirror, described defeated
Enter end to be coated with for penetrating excitation laser and oscillating laser being made to form the optical film reflected；
It is intracavitary in the optical resonance, laser crystalline substance is disposed with along the direction of the input terminal to the output coupling mirror
Body, polarizing film, electro-optic Q-switched crystal；
Wherein, the output coupling mirror is planoconvex lens, and the convex surface of the planoconvex lens is towards the optical resonator.
Optionally, the input terminal is the one side that the laser crystal deviates from the output coupling mirror；
It is coated with the second optical coating, second optics plating on one side away from the output coupling mirror in the laser crystal
Film is greater than 95% to 808nm laser transmittance, is greater than 99.8% to 1064nm laser reflectivity；
The laser crystal is coated with the 5th optical coating, the 5th optics plating towards the output coupling mirror on one side
Film is greater than 95% to the transmitance of 808nm laser, is greater than 99.5% to the transmitance of 1064nm laser.
Optionally, the optical resonator further includes Input coupling mirror, and the input terminal is the Input coupling mirror, described
Input coupling mirror is located at side of the laser crystal far from the output coupling mirror；
The Input coupling mirror is coated with the second optical coating, second optics towards the output coupling mirror on one side
Plated film is greater than 95% to 808nm laser transmittance, is greater than 99.8% to 1064nm laser reflectivity；
The Input coupling mirror is coated with the first optical coating, first optics away from the output coupling mirror on one side
Plated film is greater than 95% to 808nm laser transmittance.
Optionally, a length of 30~60mm of the chamber of the optical resonator；
Preferably, a length of 50mm of the chamber of the optical resonator.
Optionally, further include semiconductor pumping sources, the semiconductor pumping sources project the wavelength of excitation laser be 808 ±
3nm；
Coupled lens group is also set up between the semiconductor pumping sources and the Input coupling mirror；
Preferably, the coupled lens group includes at least one convex lens, the coupled lens group using K9 glass or
Quartz glass.
Optionally, the convex surface of the planoconvex lens is coated with third optical coating, and the third optical coating is to 1064nm laser
Reflectivity is 10~50%；
The plane of the planoconvex lens is coated with the 4th optical coating, and the 4th optical coating is big to 1064nm laser transmittance
In 99.5%.
Optionally, the laser crystal is Nd-doped yttrium vanadate crystal, and the doping concentration of neodymium is 0.3wt%；
Two optics end faces of the laser crystal are coated with the 5th optical coating, and the 5th optical coating swashs 808nm
The transmitance of light is greater than 95%, is greater than 99.5% to the transmitance of 1064nm laser.
Optionally, two optics end faces of the laser crystal form 1~3 ° of the angle of wedge.
Optionally, the electro-optic Q-switched crystal includes at least one RTP crystal；
Preferably, the electro-optic Q-switched crystal includes two RTP crystal, respectively the first RTP crystal and the 2nd RTP crystal,
The line direction of described first RTP crystal, two electrode surfaces and the line direction of described 2nd RTP crystal, two electrode surfaces are mutual
Vertically.
Optionally, the optics end face of the electro-optic Q-switched crystal forms 1~3 ° of the angle of wedge.
The beneficial effect that the application can generate includes:
Laser provided by the present application, output coupling mirror select planoconvex lens and short cavity long (optical resonator) intracavitary to carry out
Modeling, may be implemented the laser output of a small number of longitudinal modes even single longitudinal mode, while obtain good laser beam quality, obtain
The laser of narrow linewidth exports.It is inserted into RTP crystal in optical resonator, realizes that Gao Zhongying is electric-optically Q-switched.Intracavitary insertion polarizing film, matches
Closing RTP adjusting Q crystal can be improved electric-optically Q-switched efficiency, while also function to the effect of longitudinal mode filtering.Laser provided by the present application can
Realize the basic frequency laser of Gao Zhongying, narrow spaces, narrow linewidth, high light beam quality.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the laser provided in a kind of embodiment of the application；
Fig. 2 is the positional diagram of two RTP crystal in a kind of embodiment of the application.
Component and reference signs list:
100 optical resonators；101 Input coupling mirrors；102 laser crystals；
103 polarizing films；104 electro-optic Q-switched crystals；105 output coupling mirrors；
200 semiconductor pumping sources；300 coupled lens groups.
Specific embodiment
The application is described in detail below with reference to embodiment, but the application is not limited to these embodiments.
This application provides a kind of laser, including optical resonator 100, optical resonator 100 includes input terminal and defeated
Coupling mirror 105 out, input terminal are coated with the optical film for penetrating excitation laser and oscillating laser being made to form reflection；In optics
In resonant cavity 100, laser crystal 102, polarizing film 103, electric light are disposed with along the direction of input terminal to output coupling mirror 105
Adjusting Q crystal 104；Wherein, output coupling mirror 105 is planoconvex lens, and the convex surface of planoconvex lens is towards optical resonator 100.
Specifically, in this application, excitation laser is the laser of 808 ± 3nm, i.e. the laser that is issued of pumping source, concussion
Laser is the laser of 1064nm, i.e. the laser that is issued after being excited of laser crystal 102.
The application is not specifically limited the convex curvature of output coupling planoconvex lens, and those skilled in the art can be according to reality
Border production needs to select suitable convex curvature.Preferably, the radius of curvature of planoconvex lens is R300mm~R800mm.
In the application, output coupling mirror selects planoconvex lens to carry out intracavitary modeling, and it is even single that a small number of longitudinal modes may be implemented
The laser of longitudinal mode exports, while obtaining good laser beam quality, can obtain the laser output of narrow linewidth.Intracavitary insertion is inclined
Shake piece, and effect that is electric-optically Q-switched, while also functioning to longitudinal mode filtering can be improved in cooperation electro-optic Q-switched crystal.
Optionally, input terminal is the one side that laser crystal 102 deviates from the output coupling mirror 105；It is carried on the back in laser crystal 102
It is coated with the second optical coating on one side from output coupling mirror 105, the second optical coating is greater than 95% to 808nm laser transmittance,
99.8% is greater than to 1064nm laser reflectivity；Laser crystal 102 is coated with the 5th optics towards output coupling mirror 105 on one side
Plated film, the 5th optical coating are greater than 95% to the transmitance of 808nm laser, are greater than 99.5% to the transmitance of 1064nm laser.
Specifically, in a specific example, the input terminal of optical resonator 100 is laser crystal 102 away from described
The one side of output coupling mirror 105.The second optical coating is coated on one side away from output coupling mirror 105 in laser crystal 102, second
Optical coating can be such that excitation laser penetrates, while make to shake laser and formed in optical resonator 100 to shake reflection, this second
Optical coating is the optical film that above-mentioned input terminal is coated with.The left and right ends of optical resonator 100 are respectively 102 He of laser crystal
Output coupling mirror 105, in other words, optical resonator 100 are made of laser crystal 102 and output coupling mirror 105.This
When, laser crystal 102 is not only used as working-laser material, but also the input terminal as optical resonator 100.Such design facilitates
Simplify structure, reduces the volume of laser.
Optionally, optical resonator 100 further includes Input coupling mirror 101, and input terminal is Input coupling mirror 101, inputs coupling
It closes mirror 101 and is located at side of the laser crystal 102 far from output coupling mirror 105；Input coupling mirror 101 towards output coupling mirror
105 are coated with the second optical coating on one side, and the second optical coating is greater than 95% to 808nm laser transmittance, to 1064nm laser
Reflectivity is greater than 99.8%；Input coupling mirror 101 is coated with the first optical coating away from output coupling mirror 105 on one side, and first
Optical coating is greater than 95% to 808nm laser transmittance.
In another specific example, input terminal is Input coupling mirror 101, and the is coated in Input coupling mirror 101
Two optical coatings.
Specifically, which includes optical resonator 100；Optical resonator 100 includes Input coupling mirror 101 and defeated
Coupling mirror 105 out, i.e. optical resonator 100 are made of Input coupling mirror 101 and output coupling mirror 105；In optical resonator
In 100, laser crystal 102, polarizing film 103, electricity are disposed with along the direction of Input coupling mirror 101 to output coupling mirror 105
Light adjusting Q crystal 104.
Optionally, a length of 30~60mm of the chamber of optical resonator 100.
Preferably, a length of 50mm of the chamber of optical resonator 100.
In this application, the chamber of optical resonator 100 is grown within the scope of 30~60mm, and it is long to be designed as short cavity, can be obtained
The laser of narrow linewidth exports.
It optionally, further include semiconductor pumping sources 200, it is 808 ± 3nm that semiconductor pumping sources 200, which project optical maser wavelength,；?
Coupled lens group 300 is also set up between semiconductor pumping sources 200 and Input coupling mirror 101.
Preferably, coupled lens group 300 includes at least one convex lens, and coupled lens group is using K9 glass or quartzy glass
Glass.
Specifically, semiconductor pumping sources 200 provide energy to working-laser material, by atom by low as the excitation energy
Energy level is energized into high level and realizes population inversion.In this application, 200 wavelength of semiconductor pumping sources is 808nm, due to pumping
Wavelength with electric current increase and power rising and change, so semiconductor pumping sources 200 project light source 808nm ±
In the range of 3nm.
Coupled lens group 300 is equipped between semiconductor pumping sources 200 and Input coupling mirror 101.Passing through specific curvature
The lens combination of radius, the light source for exporting semiconductor pumping sources 200 converge to working-laser material with specific focal spot size
In.
Coupled lens group 300 in the application includes at least one convex lens, the coupled lens group using K9 glass or
Person's quartz glass.
In a specific example, as shown in Figure 1, coupled lens group 300 selects two convex lens combinations to realize pumping
The convergence of hot spot.Certainly, in other examples, also to there is multiple convex lens, pump light is equally may be implemented in multiple lens combinations
The convergence of spot.Coupled lens group 300 uses K9 glass or quartz material, plates in two optics end faces of coupled lens group 300
808nm high transmittance film.
Optionally, Input coupling mirror 101 is plane mirror or angle of wedge mirror.
Specifically, in this application, Input coupling mirror 101 can be plane mirror, or may be angle of wedge mirror.Work as input
When coupling mirror 101 is using angle of wedge mirror, the angle of wedge can be 0.5~5 °.Input coupling mirror 101 is high to the plating of semiconductor pump light source thoroughly
Film plates high-reflecting film to intracavitary resonant laser light.
Optionally, the convex surface of planoconvex lens is coated with third optical coating, and third optical coating is to 1064nm laser reflectivity
10~50%；The plane of planoconvex lens is coated with the 4th optical coating, and the 4th optical coating is greater than 1064nm laser transmittance
99.5%.
Output coupling mirror 105 plates fractional transmission film to intracavitary resonant laser light, so that resonant laser light can be launched.
Optionally, laser crystal 102 is Nd-doped yttrium vanadate crystal (Nd:YVO4Crystal), the doping concentration of neodymium is
0.3wt%；Two optics end faces of laser crystal 102 are coated with the 5th optical coating, and the 5th optical coating is to the saturating of 808nm laser
Rate is crossed greater than 95%, 99.5% is greater than to the transmitance of 1064nm laser.
Laser crystal 102 is used as working-laser material, realizes energy level transition under the excitation of semiconductor pumping sources 200.This
The laser crystal 102 that application is chosen can be Nd-doped yttrium vanadate crystal.Neodymium doping concentration is 0.3wt%, and crystalline size can be
3mm × 3mm × 10mm, two optics end face coatings of crystal require transmitance greater than 95% 808nm and transmitance is higher than
99.5%@1064nm.
Preferably, two optics end faces of laser crystal 102 form 1~3 ° of the angle of wedge.
Specifically, 102 two optics end faces of laser crystal are not parallel, form 1~3 ° of the angle of wedge.In this application, laser
Two end faces of crystal 102 form 1~3 °, can generate self-oscillation to avoid two end faces of laser crystal 102.
In this application, polarizing film 103 cooperates electro-optic Q-switched crystal 104 to realize low reactance-resistance ratio.
Optionally, electro-optic Q-switched crystal 104 includes at least one RTP crystal.
Specifically, electro-optic Q-switched crystal 104 changes intracavitary Q value by certain procedures at any time by the method for extra electric field.
When pumping beginning, chamber is made to be in low reactance-resistance ratio state, i.e. raising oscillation threshold, generate oscillation cannot, the reversion particle of upper energy level
Number can be accumulated largely, when running up to maximum value (saturation value), suddenly reduce the loss of chamber, Q value is uprushed, laser generation
It sets up rapidly, the inverted population of upper energy level is consumed in a very short period of time, is changed into intracavitary light energy, in chamber
Output end is released energy in the form of Sing plus, then just obtains the very high giant-pulse laser output of peak power.This
Apply for that electro-optic Q-switched crystal 104 selects RTP adjusting Q crystal, its advantage is that the repetition frequency range that can choose is big, substantially 1Hz is arrived
1MHz can be realized.RTP crystal is RbTiOPO4, i.e. rubidium oxygen titanium phosphate.
Optionally, electro-optic Q-switched crystal 104 includes two RTP crystal, respectively the first RTP crystal and the 2nd RTP crystal,
The line direction of two electrode surfaces of the first RTP crystal and the line direction of described 2nd RTP crystal, two electrode surfaces are mutually hung down
Directly.
Specifically, as shown in Fig. 2, the grey parts in Fig. 2 are electrode surface, when the line of the electrode surface of two RTP crystal
When direction is mutually perpendicular to, more preferably q-effect can be realized.
Optionally, the optics end face of electro-optic Q-switched crystal 104 forms 1~3 ° of the angle of wedge.
Specifically, 104 two end faces of electro-optic Q-switched crystal are not parallel, form 1~3 ° of the angle of wedge, can be avoided some in this way
End face and the end face of laser crystal 102 form mutually sub- chamber.
The course of work of laser provided by the present application is described below:
Laser tune Q process: Nd:YVO4Linearly polarized light of the crystal in semiconductor pumped lower transmitting in the x-direction, polarizing film pair
The line polarisation in the direction x passes through, if being not powered on pressure on RTP modulation crystal, light is not changed by RTP crystal, polarization state,
Electro-optical Q-switch is in " opening " state at this time.If applying voltage on RTP modulation crystal, due to longitudinal electro-optic effect, work as edge
After the linearly polarized light in the direction x passes through RTP crystal, the polarization direction of light deflects 45 °, reflects through output coupling mirror, passes through again
RTP combinations body is crossed, plane of polarization has deflected 90 ° relative to incident light, and polarised light cannot pass through devating prism again, and Q-switch, which is in, " to close
Close " state.So Nd:YVO4Crystal is under semiconductor pumped, and the making alive on RTP modulation crystal, is in resonant cavity in advance
The low Q state of " closing ", blocking laser vibrate to be formed.When the population of upper laser level reversion runs up to maximum value, suddenly
The voltage on crystal is removed, laser moment is made to be in high q-factor state, generates the laser generation of metrorrhagia formula, so that it may export one
Giant-pulse.Since this cavity structure is small and exquisite, the pulse of ultra-narrow pulsewidth can be obtained.
Since Nd-doped yttrium vanadate is stronger to 808nm absorption, too big doping should not be selected dense in the selection of doping concentration
Degree.In the selection of lumen type, in order to obtain the laser output of narrow linewidth, using two mirror structure of short cavity.Insertion RTP is brilliant in resonant cavity
Body realizes that Gao Zhongying is electric-optically Q-switched, and output coupling mirror selects planoconvex lens to carry out intracavitary modeling, and a small number of longitudinal modes may be implemented even
It is the laser output of single longitudinal mode, while obtains good laser beam quality.Intracavitary insertion polarizing film, cooperation RTP adjusting Q crystal can
To improve electric-optically Q-switched effect, while also functioning to the effect of longitudinal mode filtering.
The present invention passes through short cavity long structure combination plano-convex output coupling mirror first and obtains a small number of longitudinal modes even single longitudinal mode laser
Output realizes high repetition frequency using RTP crystal, while laser pulse width can accomplish very narrow (1ns-10ns magnitude).
Embodiment 1
Fig. 1 is the structure of laser provided by the present embodiment, and the present embodiment is specifically described below with reference to Fig. 1.
It as described in Figure 1, is successively from left to right semiconductor pumping sources 200, (including two convex lens of coupled lens group 300
Mirror), Input coupling mirror 101, Nd-doped yttrium vanadate crystal, polarizing film 103, RTP crystal, output coupling mirror 105.It chooses and swashs in experiment
Anti-reflection 808nm is distinguished in light device chamber a length of 50mm, the optics end face of two convex lenses, the size of Nd-doped yttrium vanadate crystal be 3mm ×
3mm × 10mm, two-sided anti-reflection 1064nm&808nm, neodymium are doped to 0.3wt%, and polarizing film 103 is that 1064nm wavelength single side is anti-reflection,
The two-sided anti-reflection 1064nm of RTP crystal, output coupling mirror 105 are the plano-convex lens of radius of curvature R 800mm, 1064nm transmitance
20%, the distance of Input coupling mirror 105 to RTP crystal rear end face is 8mm, and output coupling mirror 105 arrives RTP crystal front end face distance
For 32mm.The application calculates lumen type stable region of the thermal focal from 0 to 1000mm, and obtaining crystals spot radius is 0.2mm
Left and right.When pumping focal beam spot selection 0.266mm, optimal beam quality is obtained, pump mode ratio is 1.33:1 at this time.When
When RTP modulating frequency is 50KHz, obtained laser output power is greater than 1W, M2Less than 1.2, laser pulse is single longitudinal mode, laser
Pulsewidth 7ns.
The above is only several embodiments of the application, not does any type of limitation to the application, although this Shen
Please disclosed as above with preferred embodiment, however not to limit the application, any person skilled in the art is not taking off
In the range of technical scheme, a little variation or modification are made using the technology contents of the disclosure above and is equal to
Case study on implementation is imitated, is belonged in technical proposal scope.
Claims (10)
1. a kind of laser, which is characterized in that including optical resonator, the optical resonator includes input terminal and output coupling
Mirror, the input terminal are coated with the optical film for penetrating excitation laser and oscillating laser being made to form reflection；
It is intracavitary in the optical resonance, along the direction of the input terminal to the output coupling mirror be disposed with laser crystal,
Polarizing film, electro-optic Q-switched crystal；
Wherein, the output coupling mirror is planoconvex lens, and the convex surface of the planoconvex lens is towards the optical resonator.
2. laser according to claim 1, which is characterized in that the input terminal is the laser crystal away from described defeated
The one side of coupling mirror out；
It is coated with the second optical coating, second optical coating pair on one side away from the output coupling mirror in the laser crystal
808nm laser transmittance is greater than 95%, is greater than 99.8% to 1064nm laser reflectivity；
The laser crystal is coated with the 5th optical coating, the 5th optical coating pair towards the output coupling mirror on one side
The transmitance of 808nm laser is greater than 95%, is greater than 99.5% to the transmitance of 1064nm laser.
3. laser according to claim 1, which is characterized in that the optical resonator further includes Input coupling mirror, institute
Stating input terminal is the Input coupling mirror, and the Input coupling mirror is located at one of the laser crystal far from the output coupling mirror
Side；
The Input coupling mirror is coated with the second optical coating, second optical coating towards the output coupling mirror on one side
95% is greater than to 808nm laser transmittance, 99.8% is greater than to 1064nm laser reflectivity；
The Input coupling mirror is coated with the first optical coating, first optical coating away from the output coupling mirror on one side
95% is greater than to 808nm laser transmittance.
4. laser according to claim 3, which is characterized in that a length of 30~60mm of the chamber of the optical resonator；
Preferably, a length of 50mm of the chamber of the optical resonator.
5. laser according to claim 3, which is characterized in that it further include semiconductor pumping sources, it is described semiconductor pumped
The wavelength that excitation laser is projected in source is 808 ± 3nm；
Coupled lens group is also set up between the semiconductor pumping sources and the Input coupling mirror；
Preferably, the coupled lens group includes at least one convex lens, and the coupled lens group uses K9 glass or quartz
Glass.
6. laser according to claim 3, which is characterized in that the convex surface of the planoconvex lens is coated with third optical coating,
The third optical coating is 10~50% to 1064nm laser reflectivity；
The plane of the planoconvex lens is coated with the 4th optical coating, and the 4th optical coating is greater than 1064nm laser transmittance
99.5%.
7. laser according to claim 3, which is characterized in that the laser crystal is Nd-doped yttrium vanadate crystal, neodymium
Doping concentration is 0.3wt%；
Two optics end faces of the laser crystal are coated with the 5th optical coating, and the 5th optical coating is to 808nm laser
Transmitance is greater than 95%, is greater than 99.5% to the transmitance of 1064nm laser.
8. laser according to claim 7, which is characterized in that two optics end faces formation 1 of the laser crystal~
3 ° of the angle of wedge.
9. laser according to claim 3, which is characterized in that the electro-optic Q-switched crystal includes at least one RTP crystalline substance
Body；
Preferably, the electro-optic Q-switched crystal includes two RTP crystal, respectively the first RTP crystal and the 2nd RTP crystal, described
The line direction of first two, RTP crystal electrode surface and the line direction of described 2nd RTP crystal, two electrode surfaces are mutually perpendicular to.
10. laser according to claim 9, which is characterized in that the optics end face formation 1 of the electro-optic Q-switched crystal~
3 ° of the angle of wedge.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116031744A (en) * | 2023-02-22 | 2023-04-28 | 济南快谱光电技术有限公司 | Large-caliber longitudinal electro-optic device and manufacturing method thereof |
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