CN213753437U - Double-crystal regenerative amplifier - Google Patents
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- CN213753437U CN213753437U CN202022357477.9U CN202022357477U CN213753437U CN 213753437 U CN213753437 U CN 213753437U CN 202022357477 U CN202022357477 U CN 202022357477U CN 213753437 U CN213753437 U CN 213753437U
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- 239000013078 crystal Substances 0.000 title claims abstract description 130
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- 230000010287 polarization Effects 0.000 claims abstract description 35
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- 238000011069 regeneration method Methods 0.000 claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims description 39
- 230000000694 effects Effects 0.000 claims description 9
- 229910009372 YVO4 Inorganic materials 0.000 claims description 7
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 3
- 230000009977 dual effect Effects 0.000 claims 7
- 238000005086 pumping Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
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Abstract
The utility model discloses a double-crystal regenerative amplifier, which comprises a seed source, a light path polarization component and a regenerative amplification cavity; the regeneration amplification cavity comprises a photoelectric modulation component and a double-crystal gain component; the seed source is used for emitting seed light; the light path polarization component is used for transmitting and separating seed light and amplified pulse laser; the double-crystal gain component is used for providing population inversion for the seed light to realize light amplification; the photoelectric modulation component is used for controlling the polarization state of the seed light in the regeneration amplification cavity so as to control the round trip number and the amplification pulse time period of the seed light, and then the amplified pulse laser is led out of the regeneration amplification cavity. The utility model discloses a twin crystal formula regeneration amplification chamber enlargies, can effectively improve the gain factor, improves the facula quality.
Description
Technical Field
The utility model relates to a laser technical field especially relates to a double crystal regenerative amplifier.
Background
Laser technology is widely used in the fields of precision machining, distance measurement, medical treatment, industrial manufacturing, scientific research and the like. The picosecond laser which is widely used at present is an ultrafast laser technology, the picosecond laser has short pulse, relatively low pulse energy and high peak power, can be used for carrying out cold processing on materials, avoids the thermal problems of heat melting, surface recasting layers, surface chippings and the like, and is applied to brittle material cutting and mobile phone glass cutting.
At present, an optical fiber mode-locked seed laser is used as a seed source, and power and pulse energy are amplified through a laser amplification system, so that the optical fiber mode-locked seed laser is a widely used technical route at home and abroad. The amplification system is divided into a traveling wave amplifier and a regenerative amplifier. The traveling wave amplifier has low amplification efficiency and a complex structure, the regenerative amplifier has a compact structure and high amplification efficiency, nJ-level seed laser can be put to mJ level, and the traveling wave amplifier is suitable for a rear-connected frequency doubling device and realizes a high-pulse energy ultraviolet laser with medium-low repetition frequency.
The inventor of the present application has found that although the conventional regenerative cavity amplification system can shuttle the gain medium infinitely, the amplification factor and gain are limited, and the gain coefficient is saturated.
SUMMERY OF THE UTILITY MODEL
The embodiment of the application provides a double-crystal regenerative amplifier, solves the problems of amplification factor limit and gain coefficient saturation in a regenerative cavity amplification system in the prior art, achieves higher average power and pulse energy through a primary regenerative amplifier, effectively improves the gain coefficient of laser, and improves the spot quality.
The embodiment of the application provides a double-crystal regenerative amplifier, which comprises a seed source, a light path polarization component and a regenerative amplification cavity; the regeneration amplification cavity comprises a photoelectric modulation component and a double-crystal gain component;
the seed source is used for emitting seed light;
the light path polarization component is used for transmitting and separating seed light and amplified pulse laser;
the double-crystal gain component is used for providing population inversion for the seed light to realize light amplification;
the photoelectric modulation component is used for controlling the polarization state of the seed light in the regeneration amplification cavity so as to control the round trip number and the amplification pulse time period of the seed light, and then the amplified pulse laser is led out of the regeneration amplification cavity.
Further, the bimorph gain block sequentially includes, along an incident optical path of the seed light: the first dichroic mirror, the first laser crystal, the second half-wave plate, the second lens, the second laser crystal, the second dichroic mirror and the second spherical cavity mirror;
wherein the first dichroic mirror, the first laser crystal, the second half-wave plate, the second lens, the second laser crystal, and the second dichroic mirror are coaxially disposed.
Further, the optical axis of the first laser crystal is perpendicular to the optical axis of the second laser crystal, so as to compensate for the difference of thermal lens effect between the optical axis direction and the non-optical axis direction when the laser pulse passes through the first laser crystal and the second laser crystal.
Further, the double-crystal gain component further comprises a double-end pumping source, the double-end pumping source comprises a first pumping source and a second pumping source, and pumping light emitted by the first pumping source enters the first laser crystal through the first dichroic mirror to provide pumping energy for the first laser crystal;
and the pump light emitted by the second pump source enters the second laser crystal through the second dichroic mirror to provide pump energy for the second laser crystal.
Furthermore, the photoelectric modulation component sequentially comprises a second beam splitter, a quarter-wave plate, a Pockels cell and a first spherical cavity mirror along an incident light path of the seed light;
when the Pockels cell is closed, the seed light passes through the quarter-wave plate back and forth, changes the polarization direction of the seed light, is reflected on the second optical splitter, enters the double-crystal gain assembly, and goes back and forth once to be emitted out of the second optical splitter;
when the Pockels cell is opened, the seed light generates a crystal electro-optic effect according to the voltage set on the Pockels cell, is reflected on the second beam splitter, enters the double-crystal gain assembly to reciprocate for multiple times, and emits amplified pulse laser from the second beam splitter when the Pockels cell is closed.
Further, the optical path polarization component comprises an isolator, a first beam splitter, a first quarter wave plate, a Faraday rotator, a first reflector, a first lens, a second reflector and a third reflector;
the isolator, the first beam splitter, the first one-half wave plate, the Faraday rotator, the first reflector, the first lens and the second reflector are sequentially arranged along an incident light path of seed light;
and the second reflector, the first lens, the first reflector, the Faraday rotator, the first one-half wave plate and the third reflector are sequentially arranged along the amplified pulse laser light path.
Further, the first laser crystal and the second laser crystal adopt Nd: YVO4 crystal, Nd: YAG crystal, Yb: YVO4 crystal.
Further, the pockels cell includes a high voltage driver and an electro-optic crystal, and a required voltage applied to the electro-optic crystal is adjusted by the high voltage driver.
Furthermore, the electro-optical crystal adopts a transverse electro-optical crystal including BBO, RTP and LiNbO 3.
The double-crystal regenerative amplifier provided in the embodiment of the application has at least the following technical effects:
1. the embodiment adopts the photoelectric modulation component, the photoelectric modulation component comprises the Pockels cell, the Pockels cell comprises the high-voltage driver and the electro-optical crystal, the high-voltage driver is used for adjusting the voltage applied to the electro-optical crystal to generate the crystal electro-optical effect, the round trip number of the seed light in the double-crystal gain component and the required amplification pulse time interval are effectively controlled, and therefore the laser is controlled to store energy fully and the pulse energy of the laser is improved.
2. In the embodiment, a bimorph gain component is adopted, and the bimorph gain component comprises two groups of gain media, namely, the energy storage and the gain of the gain media are improved through the first laser crystal and the second laser crystal, so that higher pulse energy and output power are obtained.
3. In this embodiment, since the optical path polarization component is used, the seed light and the amplified pulse laser are transmitted, and the seed light and the amplified pulse laser are separated according to the polarization direction, so as to output the amplified pulse laser.
4. In the embodiment, the optical axes of the first laser crystal and the second laser crystal are perpendicular to each other, so that the difference between the thermal lenses of the laser crystals in the optical axis direction and the non-optical axis direction can be compensated, and better spot quality is obtained.
5. In the embodiment, the electro-optical crystal in the electro-optical modulation component is a transverse electro-optical crystal including BBO, RTP and LiNbO3, and is adapted to the material of the laser crystal, for example, the BBO electro-optical crystal can be better matched with the upper energy level life of Nd: YVO4, so that higher energy density can be obtained, and the requirements of industrial production can be met, and an amplifier with higher energy density and lower repetition frequency can be obtained by matching the RTP electro-optical crystal or the BBO electro-optical crystal with Nd: YAG crystal.
Drawings
Fig. 1 is a block diagram of a double-crystal regenerative amplifier according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a double-crystal regenerative amplifier in an embodiment of the present application.
Reference numerals:
the optical system comprises a seed source 100, an optical path polarization component 200, a regenerative amplification cavity 300, a photoelectric modulation component 310, a bimorph gain component 320, an isolator 210, a first beam splitter 220, a first one-half wave plate 230, a Faraday rotator 240, a first reflecting mirror 250, a first lens 260, a second reflecting mirror 270, a third reflecting mirror 280, a second beam splitter 311, a quarter wave plate 312, a Pockels cell 313, a first spherical cavity mirror 314, a first pumping source 321, a first dichroic mirror 322, a first laser crystal 323, a second one-half wave plate 324, a second lens 325, a second laser crystal 326, a second dichroic mirror 327, a second spherical cavity mirror 328 and a second pumping source 329.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
Referring to fig. 1-2, the present embodiment provides a double crystal regenerative amplifier, comprising: a seed source 100, an optical path polarization component 200, and a regenerative amplification chamber 300. The regenerative amplification chamber 300 includes an electro-optical modulation element 310 and a bimorph gain element 320.
The seed source 100 in this embodiment is used to emit seed light. Further, the seed source 100 employs a mode-locked seed laser, which may be a picosecond seed laser or a nanosecond seed laser. In one embodiment, the seed source 100 employs picosecond seed light with a repetition frequency of 40MHz and a pulse energy on the nJ scale.
The optical path polarization member 200 in this embodiment is used to transmit and separate the seed light and the amplified pulse laser light. Further, the optical path polarization assembly 200 receives and transmits the seed light to the regeneration amplification chamber, and the optical path polarization assembly 200 receives and transmits the amplified pulse laser. According to the difference between the polarization directions of the seed light and the amplified pulse laser, the optical path polarization component 200 separates the seed light and the amplified pulse laser in the process of transmitting the seed light and the amplified pulse laser, and outputs the amplified pulse laser.
The optical path polarization member 200 in this embodiment includes an isolator 210, a first beam splitter 220, a first quarter wave plate 230, a faraday rotator 240, a first mirror 250, a first lens 260, a second mirror 270, and a third mirror 280. Wherein, the isolator 210, the first beam splitter 220, the first quarter wave plate 230, the faraday rotator 240, the first reflector 260, the first lens 270 and the second reflector 250 are sequentially arranged along the incident light path of the seed light; and, a second reflecting mirror 270, a first lens 260, a first reflecting mirror 250, a faraday rotator 240, a first quarter wave plate 230, and a third reflecting mirror 280 are sequentially disposed along the path of the amplified pulse laser light. The first lens 270 in this embodiment employs a mode matching lens. In one embodiment, the amplified laser pulses pass through the second mirror 270, the first lens 260, the first mirror 250, the faraday rotator 240, and the first quarter wave plate 230, the polarization direction is changed from vertical polarization to horizontal polarization, and then the amplified laser pulses are reflected by the first beam splitter 220, pass through the third mirror 280, and then emit the amplified pulsed laser with high pulse energy.
Further, an input of the isolator 210 is connected to an output of the seed source 100, and an output of the isolator 210 is connected to the first beam splitter 220. The first beam splitter 220 is coupled to the first quarter wave plate 230 and the third mirror 280. In one embodiment, the isolator 210, the first beam splitter 220, the first quarter wave plate 230, the faraday rotator 240, and the first reflective mirror 250 are coaxially disposed. The first mirror 250, the first lens, and the second mirror 270 are coaxially disposed. In one embodiment, the first quarter wave plate 230 is arranged to rotate the polarization direction by 45 ° clockwise (at an angle of 22.5 °), and the Faraday rotator 240 is arranged to rotate the polarization direction by 45 ° counterclockwise, when the optical path travels from left to right.
The bimorph gain element 320 in this embodiment is used to absorb pump energy to provide ion inversion for seed light amplification. Further, the bimorph gain block 320 includes, in order along the incident optical path of the seed light: a first dichroic mirror 322, a first laser crystal 323, a second half-wave plate 324, a second lens 325, a second laser crystal 326, a second dichroic mirror 327, and a second spherical cavity mirror 328; the first dichroic mirror 322, the first laser crystal 323, the second half-wave plate 324, the second lens 325, the second laser crystal 326 and the second dichroic mirror 327 are coaxially disposed. In one embodiment, the first laser crystal 323 and the second laser crystal 326 employ Nd: YVO4 crystal, Nd: YAG crystal, Yb: YVO4 crystal. The second spherical cavity mirror 328 in this embodiment is a concave mirror with a reflectivity close to 100%. The second lens 325 in this embodiment is a pattern matched lens. The second half waveplate 324 in this embodiment rotates the polarization direction of the laser pulses by 90 °.
Further, the optical axis of the first laser crystal 323 is perpendicular to the optical axis of the second laser crystal 326, so as to compensate for the thermal lens effect difference between the optical axis direction and the non-optical axis direction when the seed light passes through the first laser crystal 323 and the second laser crystal 326. In this embodiment, the optical axis of the first laser crystal 323 is perpendicular to the optical axis of the second laser crystal 326, so that the difference of the thermal lens effect between the first laser crystal 323 and the second laser crystal 326 in the optical axis direction and the non-optical axis direction can be compensated, and the better spot quality can be obtained.
Further, the two-crystal gain module 320 further includes a two-end pump source, the two-end pump source includes a first pump source 321 and a second pump source 329, the pump light emitted by the first pump source 321 enters the first laser crystal 323 through the dichroic mirror 322 to provide pump energy for the first laser crystal 323; the pumping light from the second pumping source 329 enters the second laser crystal 326 through the second dichroic mirror 327 to provide pumping energy to the second laser crystal 326.
The electro-optical modulation component 310 in this embodiment is used to control the polarization state of the seed light in the regenerative amplification chamber 300, so as to control the round trip length and the amplification pulse period of the seed light. Further, the electro-optical modulation module 310 controls the amplification degree number of the seed light, the time of the selected pulse and the derivation time, and then controls the derivation of the amplified pulse laser light out of the regeneration amplification chamber 300. The number of amplification steps is understood to be the number of times the laser pulse makes a round trip to the gain region. The timing of the selected pulses is understood to be the start time and the end time of controlling the laser pulse to enter the gain region, after which the amplified laser pulse is derived.
Further, the electro-optical modulation assembly 310 includes, in order along the incident optical path of the seed light, a second beam splitter 311, a quarter wave plate 312, a pockels cell 313, and a first spherical cavity mirror 314. The first spherical cavity mirror 314 in this embodiment is a concave mirror, and the reflectivity is close to 100%. The pockels cell 313 in this embodiment employs a lateral electro-optic effect crystal.
When the pockels cell 313 is turned off, the seed light passes through the quarter wave plate 312 back and forth, is reflected by the second beam splitter 311, enters the bimorph gain block 320, and goes back and forth once to exit from the second beam splitter 311. Further, when the pockels cell 313 is turned off, the electro-optical modulation component 310 does not have a modulation function, for example, after the horizontally polarized seed light passes back and forth through the quarter-wave plate 312, the seed light which is changed into the vertically polarized seed light is changed into the horizontally deflected seed light, and the horizontally deflected seed light directly exits the regeneration cavity.
So that the seed light is reflected by the second beam splitter 311 and enters the bimorph gain element 320, and then goes back and forth once in the bimorph gain element 320, at this time, although the seed light passes through the bimorph gain element 320, the seed light is not fully amplified, and sufficient stored energy in the gain medium is not obtained, which belongs to a low Q value stage or an energy storage stage.
When the pockels cell 313 is opened, the seed light generates a crystal electro-optic effect according to a voltage set on the pockels cell 313, changes the polarization direction of the seed light, is reflected on the second beam splitter 311, and is incident into the bimorph gain component 320 to make multiple round trips so as to obtain amplified pulse laser. And when the pockels cell is turned off, the amplified pulse laser beam is emitted from the second beam splitter. Further, by applying a voltage set on the pockels cell 313, for example, a λ/4 voltage to the pockels cell 313 at an appropriate time, a desired crystal electro-optical effect is produced, a laser pulse within the period is locked in the regenerative amplification chamber 300,
further, the seed light enters the bimorph gain element 320, and cannot be emitted from the second beam splitter 311 due to the change of the polarization direction of the seed light, and can only propagate back and forth in the bimorph gain element 320 and the photoelectric modulation element 310, that is, the laser pulse repeatedly comes and goes in the bimorph gain element, so that sufficient stored energy is extracted onto the gain medium, and the laser pulse energy is improved, that is, the laser pulse energy belongs to a high-Q stage. Further, when the voltage on the pockels cell 313 is removed, the polarization state of the amplified laser pulse is changed to horizontal polarization, and the amplified pulse laser light is emitted from the second beam splitter 311.
In one embodiment, pockels cell 313 includes a high voltage driver and an electro-optic crystal, with the high voltage driver adjusting the required voltage on the electro-optic crystal. Further, the electro-optical crystal adopts a transverse electro-optical crystal including BBO, RTP and LiNbO 3. In one example, the round trip frequency of the regenerative amplification chamber can be tunable between 1KHz and 500KHz, depending on the nature of the electro-optic crystal and high voltage driver used.
The regenerative amplifier cavity 300 in this embodiment combines the twin gain technique to achieve a higher average amplification power and laser pulse energy for the first-stage regenerative amplifier. The principle of implementation of the regenerative amplification chamber 300 in this embodiment is as follows: the process of regenerative amplification is numerically simulated by a rate equation.
When the pockels cell is closed, the seed light changes the polarization direction of the light path through the quarter-wave plate, and then is emitted out after passing through the bimorph gain assembly back and forth in sequence, so that the seed light is not fully amplified. After the pockels cell 313 is opened, a high-voltage driver is utilized to apply voltage to the electro-optical crystal, so that the seed light changes the polarization state in the transmission process, a crystal electro-optical effect is generated, the seed light is locked in the resonant cavity containing the double-crystal gain component 320 to reciprocate back and forth, and passes through the gain medium for multiple times, so that the seed light energy is fully amplified, namely the laser pulse fully extracts stored energy. In this embodiment, after the laser pulse is sufficiently extracted to the stored energy on the gain medium, the voltage on the electro-optic crystal is quickly removed. The amplified pulsed laser light is transmitted from the second beam splitter.
Assuming that the pressurizing time on the pockels cell is TGThe period of the seed light emitted by the seed source is TDDuring the amplification process, the seed light undergoes two stages, the first stage being: the low-Q stage in which no voltage is applied, and the second stage is a high-Q stage in which a lambda/4 voltage is applied.
In the first stage, the differential equation of the gain coefficient g in the low-Q stage is:
wherein,g0for small signal gain, τRThe upper level lifetime of the gain medium.
In the second stage, the differential equation of the gain coefficient g in the high-Q stage is:
wherein E is the energy of the laser, EsatIs the saturation energy, and δ is the intra-cavity loss factor. The initial value of the energy E is the seed light energy Eseed。
By simulating the gain coefficient of the high Q value stage, the optimal number of times of the seed light to and fro in the regeneration amplification cavity can be obtained, and the optimal pockels cell pressurization time is obtained.
It follows that regenerative amplification is not a process of infinite amplification. In the embodiment, the energy storage and the gain are improved through a double-crystal gain mode, so that higher pulse energy and output power are obtained. In one embodiment, the double crystal regenerative amplifier can boost the power of the seed light to the level of 100W, with a pulse energy of about 500 muJ.
While the preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the appended claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made to the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (9)
1. A double-crystal regenerative amplifier is characterized by comprising a seed source, an optical path polarization component and a regenerative amplification cavity; the regeneration amplification cavity comprises a photoelectric modulation component and a double-crystal gain component;
the seed source is used for emitting seed light;
the light path polarization component is used for transmitting and separating seed light and amplified pulse laser;
the double-crystal gain component is used for providing population inversion for the seed light to realize light amplification;
the photoelectric modulation component is used for controlling the polarization state of the seed light in the regeneration amplification cavity so as to control the round trip number and the amplification pulse time period of the seed light, and then the amplified pulse laser is led out of the regeneration amplification cavity.
2. The dual crystal regenerative amplifier of claim 1, wherein the dual crystal gain element comprises, in order along the incident path of the seed light: the first dichroic mirror, the first laser crystal, the second half-wave plate, the second lens, the second laser crystal, the second dichroic mirror and the second spherical cavity mirror;
wherein the first dichroic mirror, the first laser crystal, the second half-wave plate, the second lens, the second laser crystal, and the second dichroic mirror are coaxially disposed.
3. The dual crystal regenerative amplifier of claim 2, wherein the optical axis of the first laser crystal is orthogonal to the optical axis of the second laser crystal to compensate for thermal lens effects differences between the optical axis direction and the non-optical axis direction of the laser pulses as they pass through the first and second laser crystals.
4. The dual crystal regenerative amplifier of claim 2, wherein the dual crystal gain module further comprises a double-ended pump source, the double-ended pump source comprising a first pump source and a second pump source,
the pump light emitted by the first pump source enters the first laser crystal through the first dichroic mirror to provide pump energy for the first laser crystal;
and the pump light emitted by the second pump source enters the second laser crystal through the second dichroic mirror to provide pump energy for the second laser crystal.
5. The dual-crystal regenerative amplifier of claim 1, wherein the electro-optical modulation assembly comprises, in order along the incident path of the seed light, a second beam splitter, a quarter-wave plate, a pockels cell, and a first spherical cavity mirror;
when the Pockels cell is closed, the seed light is reflected on the second optical splitter after passing through the quarter-wave plate back and forth, enters the double-crystal gain assembly to go back and forth once, and is emitted out of the second optical splitter;
when the Pockels cell is opened, the seed light generates a crystal electro-optic effect according to the voltage set on the Pockels cell, is reflected on the second beam splitter, enters the double-crystal gain assembly to reciprocate for multiple times, and emits amplified pulse laser from the second beam splitter when the Pockels cell is closed.
6. The dual crystal regenerative amplifier of claim 1, wherein the optical path polarization component comprises an isolator, a first beam splitter, a first quarter wave plate, a faraday rotator, a first mirror, a first lens, a second mirror, a third mirror;
the isolator, the first beam splitter, the first one-half wave plate, the Faraday rotator, the first reflector, the first lens and the second reflector are sequentially arranged along an incident light path of seed light;
and the second reflector, the first lens, the first reflector, the Faraday rotator, the first one-half wave plate and the third reflector are sequentially arranged along the amplified pulse laser light path.
7. The dual crystal regenerative amplifier of claim 2, wherein the first laser crystal and the second laser crystal employ Nd: YVO4 crystal, Nd: YAG crystal, Yb: YVO4 crystal.
8. The dual-crystal regenerative amplifier of claim 5, wherein the pockels cell includes a high voltage driver and an electro-optic crystal, and wherein a desired voltage applied to the electro-optic crystal is adjusted by the high voltage driver.
9. The double crystal regenerative amplifier of claim 8, wherein the electro-optic crystal is a lateral electro-optic crystal including BBO, RTP, LiNbO 3.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115347449A (en) * | 2022-10-18 | 2022-11-15 | 中国科学院长春光学精密机械与物理研究所 | Thin slice regenerative amplifier and amplifying method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115347449A (en) * | 2022-10-18 | 2022-11-15 | 中国科学院长春光学精密机械与物理研究所 | Thin slice regenerative amplifier and amplifying method |
| CN115347449B (en) * | 2022-10-18 | 2022-12-30 | 中国科学院长春光学精密机械与物理研究所 | Thin slice regenerative amplifier and amplifying method |
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