CN109686515B - High-reliability PTC thermistor - Google Patents

High-reliability PTC thermistor Download PDF

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CN109686515B
CN109686515B CN201811646034.2A CN201811646034A CN109686515B CN 109686515 B CN109686515 B CN 109686515B CN 201811646034 A CN201811646034 A CN 201811646034A CN 109686515 B CN109686515 B CN 109686515B
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CN109686515A (en
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苏华
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Suzhou Tuanxin Terminal Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/032—Housing; Enclosing; Embedding; Filling the housing or enclosure plural layers surrounding the resistive element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/08—Cooling, heating or ventilating arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/08—Cooling, heating or ventilating arrangements
    • H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/16—Resistor networks not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/027—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of conducting or semi-conducting material dispersed in a non-conductive organic material

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  • Microelectronics & Electronic Packaging (AREA)
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Abstract

The scheme relates to a high-reliability PTC thermistor which comprises a PTC chip, a first electrode, a second electrode and an electrode lead, wherein the first electrode is attached to the upper surface of the PTC chip, the second electrode is attached to the lower surface of the PTC chip, the electrode lead is welded to the surfaces of the first electrode and the second electrode, and the outer side of the welding part of the PTC chip, the first electrode, the second electrode and the lead is wrapped with an encapsulating layer from inside to outside; a gap is left between the PTC chip and the encapsulating layer. According to the invention, the encapsulating layer is arranged, so that the capacity of bearing external impact force is improved; through setting up explosion-proof layer, cooling layer and dampproof course give thermistor better protection to improve its ability of bearing external impact force, make it have better stability.

Description

High-reliability PTC thermistor
Technical Field
The invention relates to the technical field of thermistors, in particular to a high-reliability PTC thermistor.
Background
The conductive composite material with Positive Temperature Coefficient (PTC) characteristic makes the resistivity of PTC change by several orders of magnitude before and after the critical transition temperature, namely the resistance of PTC can increase with the rise of the environment temperature of its use, thus can reduce or cut off the current at higher temperature, play an overcurrent, overtemperature protection, at present, this kind of device has been used in a large number in various circuit protection devices, such as lithium ion battery, instrument coil, integrated circuit, etc.. When the conventional PTC thermistor is applied to the field with high working temperature, the problem of failure of a device due to low voltage-resistant grade exists, so that the device is low in reliability, easy to crack due to high current impact and potential safety hazard exists.
Disclosure of Invention
Aiming at the technical problems in the prior art, the PTC thermistor with high reliability is provided.
In order to achieve the purpose, the scheme is achieved through the following technical scheme:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode, a second electrode and electrode leads, wherein the first electrode is attached to the upper surface of the PTC chip, the second electrode is attached to the lower surface of the PTC chip, the electrode leads are welded to the surfaces of the first electrode and the second electrode, and the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the leads are wrapped with an encapsulating layer from inside to outside; a gap is reserved between the PTC chip and the encapsulating layer;
wherein, the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000011
Figure GDA0002673598050000021
in said Ba (Zr)xHf1-x)O3In the formula, x is more than or equal to 0.2 and less than or equal to 0.6.
Preferably, the PTC thermistor with high reliability further includes 0.5 to 1 part of molybdenum disulfide.
Preferably, the PTC thermistor with high reliability further includes a cooling layer disposed outside the encapsulation layer.
Preferably, the PTC thermistor with high reliability comprises a cooling layer, wherein the cooling layer comprises 30-40 wt% of bamboo fiber, 20-30 wt% of titanium dioxide, 20-25 wt% of barium sulfate, and 10-20 wt% of zinc oxide.
Preferably, the PTC thermistor with high reliability, wherein a moisture-proof layer is further arranged outside the cooling layer, and the moisture-proof layer is an acrylic resin layer.
Preferably, the PTC thermistor with high reliability, wherein the gap is provided with an explosion-proof layer; the explosion-proof layer comprises 20-30 wt% of boron nitride, 30-40 wt% of poly-p-phenylene terephthamide fiber, 25-30 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15-20 wt% of sodium pyrophosphate.
Preferably, the PTC thermistor with high reliability, wherein the electrode lead is a tin-plated lead; the diameter of the electrode lead is 0.3-0.6 mm.
Preferably, the PTC thermistor with high reliability, wherein an overload protector is provided at the bottom of the electrode lead.
Preferably, the PTC thermistor with high reliability, wherein the encapsulating layer is a glass layer.
The invention has the beneficial effects that:
(1) according to the invention, the encapsulating layer is arranged outside the resistor chip, so that the capability of bearing external impact force is improved; the sealing layer is arranged on the PTC chip, and the sealing layer is arranged on the PTC chip; the temperature reduction layer is arranged outside the encapsulating layer, so that heat generated by the resistor chip is quickly dissipated, and the stability of the thermistor is ensured; the moisture-proof layer is arranged outside the cooling layer to effectively prevent water and vapor from permeating, so that the thermistor is better protected, the capability of bearing external impact force is improved, and the thermistor has better stability; the thermistor is protected by the double materials of the explosion-proof layer and the cooling layer, so that the temperature can be uniformly diffused and radiated, and the reliability of the thermistor is ensured.
(2) According to the invention, the bamboo fiber, the titanium dioxide, the barium sulfate and the zinc oxide are reasonably blended and jointly used as a cooling layer, so that the heat dissipation effect is optimal, the high temperature resistance and the ageing resistance of the thermistor are improved, and the safety of the thermistor is ensured; the PTC chip is protected by arranging the overload protector, so that the thermistor chip is prevented from being damaged; the insulation performance of the thermistor is improved by arranging the glass layer, and the thermistor is protected from possible electric impact in the process of contacting with surrounding products, so that the safety performance of the thermistor is ensured.
Detailed Description
The present invention is further described in detail below with reference to examples so that those skilled in the art can practice the invention with reference to the description.
The scheme provides a high-reliability PTC thermistor which comprises a PTC chip, a first electrode, a second electrode and an electrode lead, wherein the first electrode is attached to the upper surface of the PTC chip, the second electrode is attached to the lower surface of the PTC chip, the electrode lead is welded to the surfaces of the first electrode and the second electrode, and an encapsulating layer wraps the outer side of the welding position of the PTC chip, the first electrode, the second electrode and the lead from inside to outside; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000031
in Ba (Zr)xHf1-x)O3In the formula, x is more than or equal to 0.2 and less than or equal to 0.6.
The carbon fiber is used as the main body of the PTC chip, and has the advantages of ultrahigh temperature resistance, good fatigue resistance, small thermal expansion coefficient, good corrosion resistance and good electrical conductivity; by adding the propylene-tetrafluoroethylene-hexafluoropropylene copolymer, the high temperature resistance and the processing performance of the product are improved, the pressure-resistant grade of the product is improved, and the reliability of the product is enhanced; by adding Ba (ZrxHf)1-x)O3The conductivity and the oxidation resistance of the conductive material are improved; the conductivity and high temperature resistance of the alloy are improved by adding the silicon-aluminum alloy; the high voltage resistance of the composite material is improved by adding zinc borate.
In another embodiment of the present disclosure, the PTC chip further comprises 0.5-1 parts of molybdenum disulfide. The current-resistant and voltage-resistant performance of the thermistor is further improved by adding molybdenum disulfide.
As another embodiment of the disclosure, a cooling layer is further disposed outside the encapsulation layer. The heat generated by the resistor chip is quickly distributed by arranging the cooling layer, so that the resistor chip can recover the resistance characteristic in a short time, and the stability of the thermistor is ensured.
As another embodiment of the present disclosure, the cooling layer includes 30 to 40 wt% of bamboo fiber, 20 to 30 wt% of titanium dioxide, 20 to 25 wt% of barium sulfate, and 10 to 20 wt% of zinc oxide. The bamboo fiber, the titanium dioxide, the barium sulfate and the zinc oxide achieve the best heat dissipation effect through the synergistic effect, the high temperature resistance and the ageing resistance of the thermistor are improved, and the safety of the thermistor is guaranteed.
As another embodiment of the present disclosure, a moisture-proof layer is further disposed outside the cooling layer, and the moisture-proof layer is an acrylic resin layer. By arranging the acrylic resin as a moisture-proof layer, water and vapor are effectively prevented from permeating, the thermistor is better protected, the capability of bearing external impact force is improved, and the thermistor has better stability.
As another embodiment of the present disclosure, the gap is provided with an explosion-proof layer; the explosion-proof layer comprises 20-30 wt% of boron nitride, 30-40 wt% of poly-p-phenylene terephthamide fiber, 25-30 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15-20 wt% of sodium pyrophosphate. Through setting up the explosion-proof layer, make thermistor receive heavy current when assaulting in the use, reduce its probability of bursting, improve its stability.
In another embodiment of the present invention, the lead is a tin-plated lead, and the diameter of the lead is 0.3 to 0.6 mm.
As another embodiment of the present disclosure, an overload protector is disposed at the bottom of the lead. The PTC chip is protected by arranging the overload protector, so that the thermistor chip is prevented from being damaged.
As another embodiment of the present disclosure, the encapsulating layer is a glass layer. The insulation performance of the thermistor is improved by arranging the glass layer, and the thermistor is protected from possible electric impact in the process of contacting with surrounding products, so that the safety performance of the thermistor is ensured.
Example 1:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode adhered to the upper surface of the PTC chip, a second electrode adhered to the lower surface of the PTC chip, and electrode leads welded to the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads; the diameter of the lead is 0.3mm, the bottom of the lead is provided with an overload protector, the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the lead are wrapped with an encapsulating layer from inside to outside, and the encapsulating layer is a glass layer; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000041
Figure GDA0002673598050000051
and a cooling layer is also arranged outside the packaging layer, and comprises 30 wt% of bamboo fiber, 30 wt% of titanium dioxide, 20 wt% of barium sulfate and 20 wt% of zinc oxide. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer.
An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 20 wt% of boron nitride, 40 wt% of poly-p-phenylene terephthamide fiber, 25 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15 wt% of sodium pyrophosphate.
Example 2:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode pasted on the upper surface of the PTC chip, a second electrode pasted on the lower surface of the PTC chip and electrode leads welded on the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads, the diameter of each lead is 0.6mm, the bottom of each lead is provided with an overload protector, the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the leads are wrapped with an encapsulating layer from inside to outside, and the encapsulating layer is a glass layer; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000052
and a cooling layer is also arranged outside the packaging layer and comprises 40 wt% of bamboo fiber, 20 wt% of titanium dioxide, 22 wt% of barium sulfate and 18 t% of zinc oxide. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer. An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 30 wt% of boron nitride, 30 wt% of poly-p-phenylene terephthamide fiber, 25 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15 wt% of sodium pyrophosphate.
Example 3:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode adhered to the upper surface of the PTC chip, a second electrode adhered to the lower surface of the PTC chip, and electrode leads welded to the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads; the diameter of the lead is 0.4mm, the bottom of the lead is provided with an overload protector, and the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the lead are wrapped with an encapsulating layer from inside to outside; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000061
and a cooling layer is also arranged outside the packaging layer and comprises 35 wt% of bamboo fiber, 25 wt% of titanium dioxide, 25 wt% of barium sulfate and 15 wt% of zinc oxide. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer.
An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 25 wt% of boron nitride, 30 wt% of poly-p-phenylene terephthamide fiber, 30 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15 wt% of sodium pyrophosphate.
Comparative example 1:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode adhered to the upper surface of the PTC chip, a second electrode adhered to the lower surface of the PTC chip, and electrode leads welded to the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads; the diameter of the lead is 0.3mm, the bottom of the lead is provided with an overload protector, the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the lead are wrapped with an encapsulating layer from inside to outside, and the encapsulating layer is a glass layer; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000062
and a cooling layer is also arranged outside the packaging layer, and comprises 30 wt% of bamboo fiber, 30 wt% of titanium dioxide, 20 wt% of barium sulfate and 20 wt% of zinc oxide. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer.
An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 20 wt% of boron nitride, 40 wt% of poly-p-phenylene terephthamide fiber, 25 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15 wt% of sodium pyrophosphate.
Comparative example 2:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode adhered to the upper surface of the PTC chip, a second electrode adhered to the lower surface of the PTC chip, and electrode leads welded to the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads; the diameter of the lead is 0.3mm, the bottom of the lead is provided with an overload protector, the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the lead are wrapped with an encapsulating layer from inside to outside, and the encapsulating layer is a glass layer; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000071
and a cooling layer is also arranged outside the packaging layer, and comprises 30 wt% of bamboo fiber, 30 wt% of titanium dioxide, 20 wt% of barium sulfate and 20 wt% of zinc oxide. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer.
An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 20 wt% of boron nitride, 40 wt% of poly-p-phenylene terephthamide fiber, 25 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15 wt% of sodium pyrophosphate.
Comparative example 3:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode pasted on the upper surface of the PTC chip, a second electrode pasted on the lower surface of the PTC chip and electrode leads welded on the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads, the diameter of each lead is 0.6mm, the bottom of each lead is provided with an overload protector, the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the leads are wrapped with an encapsulating layer from inside to outside, and the encapsulating layer is a glass layer; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000072
Figure GDA0002673598050000081
and a cooling layer is also arranged outside the packaging layer and comprises 40 wt% of bamboo fiber, 20 wt% of titanium dioxide, 22 wt% of barium sulfate and 18 t% of zinc oxide. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer. An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 30 wt% of boron nitride, 30 wt% of poly-p-phenylene terephthamide fiber, 25 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15 wt% of sodium pyrophosphate.
Comparative example 4:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode pasted on the upper surface of the PTC chip, a second electrode pasted on the lower surface of the PTC chip and electrode leads welded on the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads, the diameter of each lead is 0.6mm, the bottom of each lead is provided with an overload protector, the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the leads are wrapped with an encapsulating layer from inside to outside, and the encapsulating layer is a glass layer; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000082
and a cooling layer is also arranged outside the packaging layer and comprises 58 wt% of bamboo fiber, 20 wt% of titanium dioxide and 22 wt% of barium sulfate. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer. An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 30 wt% of boron nitride, 30 wt% of poly-p-phenylene terephthamide fiber, 25 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15 wt% of sodium pyrophosphate.
Comparative example 5:
a PTC thermistor with high reliability comprises a PTC chip, a first electrode adhered to the upper surface of the PTC chip, a second electrode adhered to the lower surface of the PTC chip, and electrode leads welded to the surfaces of the first electrode and the second electrode, wherein the leads are tinned leads; the diameter of the lead is 0.4mm, the bottom of the lead is provided with an overload protector, and the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the lead are wrapped with an encapsulating layer from inside to outside; a gap is reserved between the PTC chip and the encapsulating layer;
the PTC chip comprises the following materials in parts by weight:
Figure GDA0002673598050000091
and a cooling layer is also arranged outside the packaging layer and comprises 35 wt% of bamboo fiber, 25 wt% of titanium dioxide, 25 wt% of barium sulfate and 15 wt% of zinc oxide. The cooling layer is also provided with a moisture-proof layer outside, and the moisture-proof layer is an acrylic resin layer.
An explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 40 wt% of boron nitride, 30 wt% of poly-p-phenylene terephthalamide fiber and 30 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer.
The results of the performance tests of the examples and comparative examples are set forth below:
Figure GDA0002673598050000092
the performance test method comprises the following steps:
(1) and (3) high temperature resistance test: the protective film prepared according to any one of the above embodiments or comparative examples is baked at 200 ℃ for 120 hours, taken out and naturally cooled, if the surface of the protective film has no phenomena of carbonization, softening, cracking and edge warping and has no scorching odor, the test result is judged to be qualified, and if not, the test result is unqualified "
(2) And (3) aging resistance test: the protective film prepared according to any of the above examples or comparative examples was placed on an iron sheet, the iron sheet was continuously irradiated under a 45W medical ultraviolet lamp for 800 hours, and then taken out, and if the protective film had no aging, hardening, and shrinkage phenomena, and the surface had not yellowed, the test result was judged to be "acceptable", otherwise "unacceptable".
(3) Flow-resistant and pressure-resistant test
The manufactured PTC device was subjected to a withstand voltage test of 24h at 30V/50A.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments, which are fully applicable in all kinds of fields of application of the invention, and further modifications may readily be effected by those skilled in the art, so that the invention is not limited to the specific details without departing from the general concept defined by the claims and the scope of equivalents.

Claims (8)

1. A PTC thermistor with high reliability is characterized by comprising a PTC chip, a first electrode, a second electrode and electrode leads, wherein the first electrode is attached to the upper surface of the PTC chip, the second electrode is attached to the lower surface of the PTC chip, the electrode leads are welded to the surfaces of the first electrode and the second electrode, and the outer sides of the welding positions of the PTC chip, the first electrode, the second electrode and the leads are wrapped with an encapsulating layer from inside to outside; a gap is reserved between the PTC chip and the encapsulating layer, and an explosion-proof layer is arranged in the gap; the explosion-proof layer comprises 20-30 wt% of boron nitride, 30-40 wt% of poly-p-phenylene terephthamide fiber, 25-30 wt% of maleic anhydride grafted ethylene-tetrafluoroethylene copolymer and 15-20 wt% of sodium pyrophosphate;
wherein, the PTC chip comprises the following materials in parts by weight:
Figure FDA0002673598040000011
in said Ba (Zr)xHf1-x)O3In the formula, x is more than or equal to 0.2 and less than or equal to 0.6.
2. A highly reliable PTC thermistor according to claim 1, wherein the PTC chip further comprises 0.5 to 1 part of molybdenum disulfide.
3. A highly reliable PTC thermistor according to claim 1, wherein a temperature reducing layer is further provided outside the encapsulating layer.
4. A highly reliable PTC thermistor according to claim 3, wherein said temperature lowering layer comprises 30 to 40 wt% of bamboo fiber, 20 to 30 wt% of titanium dioxide, 20 to 25 wt% of barium sulfate, and 10 to 20 wt% of zinc oxide.
5. A highly reliable PTC thermistor according to claim 4, wherein a moisture-proof layer is further provided outside said temperature-reducing layer, and said moisture-proof layer is an acrylic resin layer.
6. A highly reliable PTC thermistor according to claim 1, wherein the electrode lead is a tin-plated lead; the diameter of the electrode lead is 0.3-0.6 mm.
7. A highly reliable PTC thermistor according to claim 6, wherein an overload protector is provided at the bottom of the electrode lead.
8. A highly reliable PTC thermistor according to claim 1, wherein the encapsulating layer is a glass layer.
CN201811646034.2A 2018-12-30 2018-12-30 High-reliability PTC thermistor Active CN109686515B (en)

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