CN103762012B - Lower Tc PTC electrically conductive composition, PTC over-current protection device and manufacture method thereof - Google Patents

Lower Tc PTC electrically conductive composition, PTC over-current protection device and manufacture method thereof Download PDF

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CN103762012B
CN103762012B CN201410009135.4A CN201410009135A CN103762012B CN 103762012 B CN103762012 B CN 103762012B CN 201410009135 A CN201410009135 A CN 201410009135A CN 103762012 B CN103762012 B CN 103762012B
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ptc
electrically conductive
conductive composition
organic polymer
protection device
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CN103762012A (en
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徐行涛
李大军
朱建娟
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SHENZHEN HUIRUI ELECTRONIC MATERIALS Co Ltd
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SHENZHEN HUIRUI ELECTRONIC MATERIALS Co Ltd
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Abstract

The present invention relates to a kind of lower Tc PTC electrically conductive composition, PTC over-current protection device and manufacture method thereof. the invention provides a kind of lower Tc PTC electrically conductive composition; by weight; including 40~the organic polymer of 55%, 40~the conductive black of 55%, 1~the pressure reinforcer of 10%.Present invention also offers a kind of PTC over-current protection device comprising this lower Tc PTC electrically conductive composition and manufacture method thereof.The PTC over-current protection device of the present invention has the operating temperature less than about 80 DEG C and higher PTC intensity and excellent resistance stability, thus circuit can carry out good cross at low ambient temperatures and flow and overheat protector.

Description

Lower Tc PTC electrically conductive composition, PTC over-current protection device and manufacture method thereof
Technical field
The present invention relates to electrically conductive composition technical field, particularly to positive temperature coefficient (Positive Temperature coefficient, is called for short PTC) electrically conductive composition technical field, specifically refer to one Kind of lower Tc PTC electrically conductive composition and comprise the PTC overcurrent protector of low operating temperature of said composition Part and manufacture method thereof.
Background technology
So-called polymer PTC critesistor, is referred to utilize and is made by thermal expansion what electric conductivity changed to lead The resistance temperature characteristic of conductive polymers, i.e. PTC(Positive temperature Coefficient) characteristic, carrys out the element of connecting and disconnecting circuit, is called for short PTC.
PTC device resistance in the normal state is held essentially constant, when fault causes larger current to lead to When crossing PTC, its temperature can be suddenly increased to critical transition temperature, and at this moment resistance increases suddenly, occurs The transformation (temperature that resistance value is undergone mutation becomes " transition temperature ") of several orders of magnitude, such that it is able to It is reduced or turned off electric current at relatively high temperatures, reaches temperature control insulation or played the mesh of stream, overtemperature protection 's.And when after failture evacuation, PTC device temperature declines, and its resistance value is restored to low resistance state. Based on the over-current protective feature that PTC device is excellent so that its at household electrical appliances, computer, communicate, disappear The fields such as expense electronics, battery, automobile micro machine obtain and are widely applied.
At present, PTC device on the market is typically filled in crystallization or hemicrystalline organic by conductive filler Macromolecule and make, conductive filler is usually white carbon black, metal, conductivity ceramics etc., and organic polymer Be usually high density polyethylene, low density polyethylene, linear low density polyethylene (LLDPE) LLDPE, Kynoar PVDF etc..But the fusing point of this kind of resin matrix is higher, its fusing point of minimum LDPE Being about about 110 DEG C, its fusing point of the highest PVDF reaches more than 165 DEG C, causes the dynamic of PTC device Make temperature to be usually more than 85 DEG C.For at operating ambient temperature relatively low (such as the time in severe winter), or (such as lithium ion battery, its safe temperature is the lowest to need the electronic equipment of overheat protector under lower temperature In 85 DEG C) when, use the critesistor of this type to carry out overcurrent protection, be susceptible to PTC The relatively slow not even action of action, it is impossible to circuit or equipment are protected fast and effectively, thus causes Serious consequence.For improving PTC-element protective capability in these cases, the general method used It is to improve the resistance of PTC or reduce the size of PTC chip to improve speed of action.And increase PTC Resistance can increase the power attenuation of circuit;Reduce chip size and can promote PTC speed of action, but The resistance of PTC can be increased equally and then increase the loss of circuit.By the conduction charcoal in PTC device formula Black change the higher metal powder of conductive capability or conductivity ceramics powder into, can accomplish simultaneously less size and Relatively low resistance, but metal powder easily aoxidizes and causes PTC resistance stability poor, pressure and resistance to stream Resistance varying-ratio is the biggest, and the PTC resistance stability with ceramics as conductive filler is than metal powder system Improve a lot but can not compare with the stability of white carbon black system PTC.Additionally, metal powder and pottery The price of porcelain powder is the highest, and about 10 times of white carbon black price, are greatly increased the cost of PTC device.This Outward, improve the overheat protector ability under PTC device speed of action at low ambient temperatures and low temperature, Also has a method, it is simply that select the polymeric material that fusing point is relatively low, to reduce the action of PTC device Temperature.Although there being patent report, ethylene-vinyl acetate copolymer (EVA), ethylene-acrylic acid are common Polymers (EAA), ethylene-ethyl acrylate copolymer (EEA) can serve as the base material of ptc material, And the fusing point of these polymer also complies with the requirement of lower Tc PTC device, but do not use on the market The PTC device that this base polymer manufactures as base material, its reason is that this base polymer has one jointly Shortcoming, it is simply that containing double bond in its molecular chain structure, cause its thermostability, ageing resistance poor, with The resistance stability of the PTC device that it is made is poor, and resistance automatic recovery ability is not enough, thus practical valency It is worth the highest.
Therefore, in order to enable PTC thermistor at a lower temperature to lithium ion battery or other The equipment needing low-temperature protection carries out quickly crossing stream and overheat protector, needs a kind of low turnover temperature of exploitation The PTC device that degree, quick acting and resistance stability are excellent.
Summary of the invention
The present invention provides a kind of lower Tc PTC electrically conductive composition and the PTC that comprises said composition to cross stream and protects Protect the manufacture method of device.This PTC device has low operating temperature, high PTC intensity and excellent electricity Resistance stability, thus at low ambient temperatures circuit can be carried out quick, reliable mistake and flow and overheat protector.
To achieve these goals, a first aspect of the present invention, it is provided that a kind of lower Tc PTC conduction group Compound, by weight, including 40~the organic polymer of 55%, 40~the conductive black of 55%, 1~10% Pressure reinforcer.
It is preferred that the fusing point 60 of described organic polymer~80 DEG C.
It is preferred that described organic polymer is one or more crystallization or semi-crystalline polymers.
It is preferred that described organic polymer gathers selected from very low density polyethylene (VLDPE), extremely-low density One or more in ethylene (ULDPE), ethylene-alpha-olefin copolymer (POE).
It is preferred that the dibutyl phthalate absorption of described conductive black (DBP value) is 40 cm3/ 100g to 200cm3Between/100g, the particle diameter of described conductive black is between 20nm to 120nm. More preferably DBP value is about at 50cm3/ 100g to 140cm3Between/100g, particle diameter is at 50nm to 120nm Between.Satisfactory white carbon black has: Raven410(particle diameter 101nm, DBP value 65cm3/ 100g, Columbian company), Raven430(particle diameter 82nm, DBP value 78cm3/ 100g, Columbian Company), Sterling N550(particle diameter 55nm, DBP value 120cm3/ 100g, Cabot company), 3030B(particle diameter 55nm, DBP value 130cm3/ 100g, Rhizoma Sparganii carbon element).
Except described polymers compositions and conductive filler, PTC electrically conductive composition also includes one or more Pressure reinforcer, to improve the pressure of PTC device and flow-resistant capacity and resistance stability.
It is preferred that described filler is selected from zinc oxide, magnesium oxide, aluminium oxide, magnesium hydroxide, hydroxide One or more in aluminum.
It is preferred that the PTC electrically conductive composition of described low temperature is by electron beam or gamma-rays (Co60) spoke According to and cross-link.In order to improve electrical stability, described PTC electrically conductive composition can pass through crosslinking with radiation, Radiation dose arrives 15Mrads 5 to 30Mrads, preferably 5.
A second aspect of the present invention, it is provided that a kind of PTC over-current protection device, including PTC chip and Being welded on the metal electrode of described PTC chip upper and lower surface, described PTC chip includes any of the above-described item Described lower Tc PTC electrically conductive composition and be covered in upper and lower two surfaces of described lower Tc PTC electrically conductive composition Tinsel constitute, described PTC chip is through electron beam or gamma-rays (Co60) irradiation.
It is preferred that described PTC device resistance of described PTC device when temperature is higher than 120 DEG C is at least When 25 DEG C 103Times.
In a third aspect of the present invention, it is provided that the manufacture method of above-mentioned PTC over-current protection device, Comprise the following steps:
A. by described organic polymer, described conductive black and described proof voltage reinforcing agent according to 40~55%: 40~55%:1~10% weight ratio join in banbury, molten at described organic polymer The above banburying 10~20min of point, obtains PTC electrically conductive composition, then through mill pulling-on piece, hot pressing Machine molds, and obtains the PTC electrically conductive composition sheet that thickness is 0.15~0.20mm;
B. above-mentioned PTC electrically conductive composition sheet being put into mould, two tinsels are individually placed to PTC simultaneously The upper and lower surface of composition layer, through hot press pressing, obtains PTC compositions and tinsel Complex;
C. described PTC compositions and tinsel complex are die-cut into PTC chip, then to PTC chip Annealing heat treatment, condition is placement 60 minutes more than the fusing point of described organic polymer, then It is slowly cooled to room temperature;
D. the described PTC chip after heat treatment is cross-linked by high-power electron beam or gamma-ray irradiation.
Further, by PTC chip upper and lower surface weldering good for irradiation in solder furnace or solder reflow device Connect two metal electrodes, through ultrasonic waves for cleaning, make PTC overcurrent protector.
It is preferred that in step a, the temperature of described banbury is set higher than described organic polymer Fusing point 10~60 DEG C.
More preferably, in stepb, described PTC black-film is carried out with being compounded on hot press of metal forming, The temperature of described hot press is higher than the fusing point 10 of described organic polymer~60 DEG C.
It is preferred that in step c, described cooling is Slow cooling, cooldown rate is less than 40 DEG C/min.
It is preferred that in step d, described irradiation dose is 5 to 30Mrads, preferably 5 arrive 15Mrads.
The beneficial effects of the present invention is: the PTC over-current protection device of the present invention have low operating temperature, High PTC intensity and the advantage of excellent resistance stability, thus can use and at low ambient temperatures circuit is risen Overcurrent and overheat protector to fast and reliable.
Accompanying drawing explanation
Fig. 1 is the PTC device chip schematic diagram of the present invention;
Fig. 2 is the over-current protection device schematic diagram of the present invention;
In accompanying drawing, labelling is described as follows:
10 PTC chip;
11 PTC electrically conductive compositions;
12 tinsels;
20 PTC protect device;
22 metal electrodes.
Detailed description of the invention
In order to be more clearly understood that the technology contents of the present invention, describe in detail especially exemplified by following example The composition of PTC device of the present invention and manufacturing process.
Embodiment 1
Composition and the weight ratio of the PTC electrically conductive composition of the present embodiment are as follows:
The very low density polyethylene of 50.7wt% (VLDPE-1, Exact4023, melting means 3.5g/10min, Density 0.882g/cm3, fusing point 73 DEG C, Exxon company), the conductive black of 43.5wt% (white carbon black-1: 3030B, particle diameter 55nm, DBP value 130cm3/ 100g, Rhizoma Sparganii carbon element), the magnesium hydroxide of 2.9wt% (Mg (OH)2, HT-206, granularity 2 μm, Jinan Thailand star chemical industry), the zinc oxide of 2.9wt% (ZnO, ZHZn-01, particle diameter 40nm, Wuxi Hui Ze chemical industry).
Weighing according to mass ratio, in order, it is 100 DEG C, rotating speed that VLDPE-1 joins design temperature In the banbury of 30r/min, banburying is subsequently adding white carbon black banburying 8 minutes, finally to fusing in 4 minutes Add magnesium hydroxide, zinc oxide banburying 5 minutes, obtain the PTC electrically conductive composition with ptc characteristics.
It is 60 DEG C by above-mentioned PTC electrically conductive composition at mill pulling-on piece, mill design temperature, makes Thickness is 0.15~0.20mm, the long and PTC electrically conductive composition sheet of a width of 120mm;PTC is conducted electricity group Compound sheet puts into mould, and the upper and lower surface at PTC electrically conductive composition sheet puts two thickness simultaneously is 35 μm Tinsel, mould is put in hot press, press temperature set 120 degree, pressure setting 15MPa, Hot pressing 10min obtains the complex of PTC electrically conductive composition and tinsel;To PTC electrically conductive composition With the complex annealing heat treatment of tinsel, heat treatment condition is 60 DEG C/4 hours, then uses high energy Electron beam irradiation cross-links, dosage 10Mrad.
PTC electrically conductive composition good after irradiation and metal forming complex are die-cut into 3.6 × 9.0mm's PTC chip, as shown in Figure 1.
Metal electrode is welded in the welding of PTC chip upper and lower surface by solder reflow device, clear through ultrasound wave Wash, make ribbon PTC over-current protection device, as shown in Figure 2.
Measure the PTC device resistance (R when 25 DEG C0);The R-T(resistance v. temperature of test PTC device) Curve, calculates PTC intensity (lg (Rmax/R0)), wherein Rmax is PTC device at 120 DEG C Big resistance), curve reads transition temperature value (DEG C) of PTC device resistance sudden change;Measure PTC Device is at T movement time that electric current is 4 ampere-hourstrip(S);Measure PTC device electricity under 16V/10A After stream impact cycle 100 times resistance change rate and under 16V/10A resistance value after pressure 24 hours Rate of change.The electric performance test data of PTC device are shown in Table 2.
Embodiment 2
PTC device is manufactured according to the method identical with described in embodiment 1, but by VLDPE-1(Exact 4023) content is become 47.3wt% from 50.7wt%, and conductive black (white carbon black-1,3030B) contains Amount is become 47.3wt% from 43.5wt%, and the content of magnesium hydroxide (HT-206) is become from 2.9wt% 2.7wt%, the content of zinc oxide (ZHZn-01) is become 2.7wt% from 2.9wt%.According to embodiment 1 Described in identical mode test the physical property of PTC device, the results are shown in Table 2.
Embodiment 3
PTC device is manufactured according to the method identical with described in embodiment 1, but by the conduction of 48.4wt% White carbon black (white carbon black-2, Raven410, particle diameter 101nm, DBP value 65cm3/ 100g, Columbian are public Department) replace the conductive black (white carbon black-1,3030B) of 43.5wt% in embodiment 1, by VLDPE-1(Exact 4023) content is become 44.3wt% from 50.7wt%, and the content of magnesium hydroxide (HT-206) is by 2.9wt% Becoming 2.5wt%, the content of zinc oxide (ZHZn-01) is become 2.5wt% from 2.9wt%.According to and real Executing mode identical described in example 1 and test the physical property of PTC device, the results are shown in Table 2.
Embodiment 4
PTC device is manufactured according to the method identical with described in embodiment 1, but extremely low with 47.3wt% Density polyethylene (VLDPE-2, X141, melting means 8.0g/10min, density 0.90g/cm3, fusing point 76 DEG C, Rhizoma Sparganii oiling company) replace the VLDPE-1(Exact4023 of 50.7wt% in embodiment 1), The content of conductive black (white carbon black-1,3030B) is become 47.3wt%, magnesium hydroxide from 43.5wt% (HT-206) content is become 2.7wt% from 2.9wt%, and the content of zinc oxide (ZHZn-01) is by 2.9wt% Become 2.7wt%.According to testing the physical property of PTC device with identical mode described in embodiment 1, The results are shown in Table 2.
Embodiment 5
PTC device is manufactured according to the method identical with described in embodiment 1, but extremely low with 41.6wt% Density polyethylene (VLDPE-2, X141) replaces the VLDPE-1(Exact of 50.7wt% in embodiment 1 4023), 43.5wt% in embodiment 1 is replaced with the conductive black (white carbon black-2, Raven410) of 53.6wt% Conductive black (white carbon black-1,3030B), simultaneously by the content of magnesium hydroxide (HT-206) by 2.9wt% Becoming 2.4wt%, the content of zinc oxide (ZHZn-01) is become 2.4wt% from 2.9wt%.According to and real Executing mode identical described in example 1 and test the physical property of PTC device, the results are shown in Table 2.
Embodiment 6
PTC device is manufactured according to the method identical with described in embodiment 1, but with the ethylene of 47.3wt% -α octene copolymer (POE-1:ENGAGE7277, melting means 0.8g/10min, density 0.880g/cm3, Fusing point 64 DEG C, DOW company) replace the VLDPE-1(Exact4023 of 50.7wt% in embodiment 1), The content of conductive black (white carbon black-1,3030B) is become 47.3wt%, magnesium hydroxide from 43.5wt% (HT-206) content is become 2.7wt% from 2.9wt%, and the content of zinc oxide (ZHZn-01) is by 2.9wt% Become 2.7wt%.According to testing the physical property of PTC device with identical mode described in embodiment 1, The results are shown in Table 2.
Embodiment 7
PTC device is manufactured according to the method identical with described in embodiment 1, but with the ethylene of 45.4wt% -α octene copolymer (POE-2:ENGAGE8452, melting means 3.0g/10min, density 0.875g/cm3, Fusing point 66 DEG C, DOW company) replace the VLDPE-1(Exact4023 of 50.7wt% in embodiment 1), The content of conductive black (white carbon black-1,3030B) is become 49.4wt%, magnesium hydroxide from 43.5wt% (HT-206) content is become 2.6wt% from 2.9wt%, and the content of zinc oxide (ZHZn-01) is by 2.9wt% Become 2.6wt%.According to testing the physical property of PTC device with identical mode described in embodiment 1, The results are shown in Table 2.
Comparative example 1
PTC device is manufactured according to the method identical with described in embodiment 1, but with the ethylene of 46.1wt% -acrylic copolymer (EAA:2174, melting means 2.8g/10min, AA content 7%, fusing point 72 DEG C, E.I.Du Pont Company produces) replace the VLDPE-1(Exact4023 of 50.7wt% in embodiment 1), will conduction The content of white carbon black (white carbon black-1,3030B) is become 48.7wt%, magnesium hydroxide (HT-206) from 43.5wt% Content become 2.6wt% from 2.9wt%, the content of zinc oxide (ZHZn-01) is become from 2.9wt% 2.6wt%.According to testing the physical property of PTC device with identical mode described in embodiment 1, knot Fruit is shown in Table 2.
Comparative example 2
PTC device is manufactured according to the method identical with described in embodiment 1, but highly dense with 43.2wt% Degree polyethylene (HDPE:5000S, melting means 1.0g/10min, density 0.954g/cm3, fusing point 135 DEG C, Daqing petrochemical) replace the VLDPE-1(Exact4023 of 50.7wt% in embodiment 1), use 51.8wt% Conductive black (white carbon black-2, Raven410) replace the conductive black (charcoal of 43.5wt% in embodiment 1 Black-1,3030B), the content of magnesium hydroxide (HT-206) is become 2.5wt% from 2.9wt% simultaneously, The content of zinc oxide (ZHZn-01) is become 2.5wt% from 2.9wt%.According to described in embodiment 1 Identical mode tests the physical property of PTC device, and the results are shown in Table 2.
Comparative example 3
PPTC device is manufactured according to the method identical with described in embodiment 1, but by VLDPE-1(Exact 4023) content is become 50.0wt% from 50.7wt%, and conductive black (white carbon black-1,3030B) contains Amount is become 50.0wt% from 43.5wt%, removes the magnesium hydroxide in formula and zinc oxide component simultaneously.Press According to testing the physical property of PTC device with identical mode described in embodiment 1, result is listed in table 2 In.
The composition of the PTC electrically conductive composition that PTC device of the present invention is used and mass percent, such as table 1 Shown in.
Table 1
Note: material composition unit: mass percent wt%
Table 2
Note: in table, data are testing mean.
Pass through Tables 1 and 2, it can be seen that the PTC over-current protection device tool that the embodiment of the present invention provides There are relatively low room temperature resistance value, and PTC intensity (lg (Rmax/R0)) all more than 3.0, Ke Yiman The demand of foot PTC protection circuit.At PTC device R-T(resistance v. temperature) on test curve, PTC Resistance value raises the height of temperature (transition temperature) corresponding when undergoing mutation and represents PTC with temperature The height of the operating temperature of device, and then reflect the speed of PTC speed of action.And transition temperature Height and the being proportionate property of melting temperature of the polymeric material of use in PTC device formula, be i.e. polymerized Thing material melting point height then PTC device activity temperature is high, on the contrary the low then PTC device of polymeric material fusing point Operating temperature is low.In embodiments of the invention 1~7, melting point polymer used is below 80 DEG C, thus all There is the transition temperature less than 80 DEG C, and be high-density polyethylene due to polymer used in comparative example 2 Its fusing point of alkene is about 135 DEG C, thus its transition temperature almost twice is in the transition temperature of embodiment 1~7. Embodiment 1~7 is reflected on the movement time of PTC, at resistance with the height of comparative example 2 transition temperature Being worth close and apply under conditions of same current, in embodiment 1~7, the speed of action of device is significantly faster than that Comparative example 2.Although using EVA in comparative example 1 is that resin matrix can obtain move close with the present invention Make speed, but its pressure and testing current resistance stability substantially differs from very than the embodiment of the present invention 1~7 Many.Comparative example 3 formula eliminates the magnesium hydroxide of resistance to pressure strengthening agent and zinc oxide, causes in PTC resistance Under conditions of close, the pressure resistance varying-ratio of comparative example 3, the resistance varying-ratio of resistance to electric current are all substantially high In embodiment 1~7.
To sum up, the PTC device of the present invention has low operating temperature, high PTC intensity and excellent resistance Stability, thus at low ambient temperatures circuit can be carried out fast and reliable and cross stream and overheat protector, and Manufacturing simplicity, efficiency is high.
Above content is that to combine concrete preferred implementation made for the present invention the most specifically Bright, it is impossible to assert the present invention be embodied as be confined to these explanations.For technology belonging to the present invention For the those of ordinary skill in field, without departing from the inventive concept of the premise, it is also possible to if making Dry simple deduction or replace, all should be considered as belonging to protection scope of the present invention.

Claims (3)

1. a lower Tc PTC electrically conductive composition, it is characterized in that: by weight, including 40~the organic polymer of 55%, 40~the conductive black of 55%, 1~the pressure reinforcer of 10%, the fusing point of described organic polymer is between 64 DEG C and 80 DEG C, and the mean diameter of described conductive black is between 20~120nm, and the oil factor of described conductive black is between 40cm3/ 100g~200cm3Between/100g, described organic polymer is one or more crystallization or semi-crystalline polymers, one or more in very low density polyethylene, ultra-low density polyethylene, ethylene-alpha-olefin copolymer of described organic polymer, one or more in zinc oxide, magnesium oxide, aluminium oxide, magnesium hydroxide, aluminium hydroxide of described pressure reinforcer, described PTC electrically conductive composition carries out cross-linking radiation by high-power electron beam or gamma-rays.
2. a PTC over-current protection device, it is characterised in that include the lower Tc PTC electrically conductive composition described in claim 1.
3. the manufacture method of a PTC over-current protection device according to claim 2, it is characterised in that: comprise the following steps:
The pressure reinforcer of weight ratio 40~the organic polymer of 55%, weight ratio 40~the conductive black of 55% and weight ratio 1~10% is joined in banbury, banburying 10~20min at 10~60 DEG C more than the fusing point of described organic polymer, obtain PTC electrically conductive composition, again through mill pulling-on piece, hot press molds, and obtains the PTC electrically conductive composition sheet that thickness is 0.15~0.20mm;
Above-mentioned PTC electrically conductive composition sheet is put into mould, two tinsels are individually placed to the upper and lower surface of PTC electrically conductive composition sheet simultaneously, through hot press pressing, obtain the complex of PTC electrically conductive composition sheet and tinsel;
The complex of described PTC electrically conductive composition sheet Yu tinsel is die-cut into PTC chip, then PTC chip is carried out heat treatment of annealing, place 60 minutes for 10~60 DEG C more than the fusing point of described organic polymer, be then slowly cooled to room temperature;
Described PTC chip after heat treatment is cross-linked by high-power electron beam or gamma-ray irradiation, and irradiation dose is 5 to 30Mrads;
In Reflow Soldering or solder furnace equipment, the upper and lower surface of irradiated PTC chip is welded metal electrode, then through ultrasonic waves for cleaning, make the PTC over-current protection device described in claim 2.
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