CN109684125A - A kind of method, apparatus, equipment and storage medium for repairing DDR physical damage - Google Patents

A kind of method, apparatus, equipment and storage medium for repairing DDR physical damage Download PDF

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Publication number
CN109684125A
CN109684125A CN201811600853.3A CN201811600853A CN109684125A CN 109684125 A CN109684125 A CN 109684125A CN 201811600853 A CN201811600853 A CN 201811600853A CN 109684125 A CN109684125 A CN 109684125A
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China
Prior art keywords
physical damage
storage units
ddr
several
terminal device
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CN201811600853.3A
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CN109684125B (en
Inventor
杜文超
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Shanghai Chuanggong Telecom Technology Co Ltd
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Shanghai Chuanggong Telecom Technology Co Ltd
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Priority to CN201811600853.3A priority Critical patent/CN109684125B/en
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/0703Error or fault processing not based on redundancy, i.e. by taking additional measures to deal with the error or fault not making use of redundancy in operation, in hardware, or in data representation
    • G06F11/0793Remedial or corrective actions
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44Indication or identification of errors, e.g. for repair
    • G11C29/4401Indication or identification of errors, e.g. for repair for self repair

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The present invention provides a kind of method, apparatus, equipment and storage medium for repairing DDR physical damage, repairs DDR physical damage low efficiency, technical problem at high cost for solving the prior art.Method includes: to scan all storage units of the DDR after the terminal device powers on, and determines several physical damage storage units in the DDR there are physical damage, and obtain the physical address of several physical damage storage units;Judge whether several physical damage storage units can repair;If it has, then by the default subregion of the physical address storage of several physical damage storage units to flash memory;The terminal device is restarted, so that the terminal device re-powers, and the first stage after the power-up repairs several physical damage storage units based on the physical address stored in the default subregion of the flash memory.

Description

A kind of method, apparatus, equipment and storage medium for repairing DDR physical damage
Technical field
The present invention relates to field of computer technology, in particular to a kind of method, apparatus, equipment for repairing DDR physical damage And storage medium.
Background technique
With the development of science and technology, the terminal devices such as computer, mobile phone, tablet computer are most normal in people's daily life Using handling and record the device of data.In terminal device, memory plays important role, driver or applies journey The data such as sequence must be loaded into memory, then be accessed by central processing unit (Central Processing Unit, CPU) And execute data.Double Data Rate synchronous DRAM (Double Data Rate SDRAM, DDR) is presently the most main One of memory specification of stream, the main product of major chipset manufacturer are entirely to support its.
In the prior art, after physical damage occurs for storage unit in DDR, it is necessary to dismantle DDR from terminal device Get off, then carries out the inspection or reparation of physical damage, remediation efficiency to DDR by the dedicated reparation platform of DDR chip business men It is low and at high cost.
Summary of the invention
The embodiment of the present invention provides a kind of method, apparatus, equipment and storage medium for repairing DDR physical damage, for solving Certainly the prior art repairs DDR physical damage low efficiency, technical problem at high cost.
In a first aspect, the embodiment of the present invention provides a kind of reparation Double Data Rate synchronous DRAM DDR physics damage Bad method is applied to terminal device, which comprises
After the terminal device powers on, all storage units of the DDR are scanned, determine existence in the DDR Several physical damage storage units of damage are managed, and obtain the physical address of several physical damage storage units;
Judge whether several described physical damage storage units can repair;
If it has, then by the default subregion of the physical address storage of several physical damage storage units to flash memory; The terminal device is restarted, so that the terminal device re-powers, and the first stage after the power-up is based on the sudden strain of a muscle The physical address stored in the default subregion deposited repairs several described physical damage storage units;
Otherwise, the terminal device is restarted, so that the terminal device re-powers, and second-order after the power-up Section shows the information that several described physical damage storage units cannot repair by the display interface of the terminal device.
Detection and repair process of the present embodiment to the DDR physical damage in terminal device, all certainly by terminal device Body is completed, and does not need to dismantle DDR from terminal device, also need not rely on the dedicated reparation platform of DDR chip business men into Row is checked and is repaired, and is improved the remediation efficiency of DDR physical damage, has been saved rehabilitation cost;Secondly, determining DDR physics damage When can badly repair, by the default subregion of the physical address storage of several physical damage storage units to flash memory, to guarantee end End equipment still can determine that the physical address of several physical damage storage units after restart, further increase reparation rate and Reliability;Moreover, when determining that DDR physical damage can not repair, the information that cannot be repaired is shown in the reboot process, It allows a technician to know that the physical damage of the DDR cannot be repaired, improves user experience.
Optionally, judge whether several physical damage storage units can repair, specifically include:
Recovery scenario corresponding to the physical damage judged whether there is according to the producer of DDR mark with DDR;
If it has, then determining that several physical damage storage units can repair;
Otherwise, it determines several physical damage storage units can not repair.
Present embodiment identifies according to the producer of DDR and determines whether the physical damage of DDR can repair, and ensure that DDR object The reliability that reason damage is repaired.
Optionally, after showing the information that several described physical damage storage units cannot repair, the method is also Include:
After the volume key for detecting the terminal device is pressed touching preset duration, the next stage that this time is restarted is executed, So that the terminal device enters working condition.
Present embodiment can press touching volume key when terminal device shows that physical damage cannot repair by preset duration Mode makes terminal device enter working condition, improves user experience.
Optionally, the physical address stored in the default subregion based on the flash memory is to several described physical damages Storage unit is repaired, comprising:
It is single to orient several physical damages storage for the physical address for reading the default partitioned storage of the flash memory Member;
It is identified according to the producer of the DDR and determines recovery scenario, and execute the recovery scenario to several described physics Damaged memory unit is repaired.
Present embodiment orients several physics damage by the physical address of the default partitioned storage of reading flash memory Bad storage unit, and identified according to the producer of DDR and determine recovery scenario, it ensure that the reliability of DDR physical damage reparation, and mention The high efficiency of DDR physical damage reparation.
Optionally, by the default subregion of the physical address of several physical damage storage units storage to flash memory it Afterwards, the method also includes:
The value of the reparation flag bit stored in the flash memory is provided for what characterization needed to repair the DDR First value;
Before being repaired to several described physical damage storage units, further includes:
The value for determining the reparation flag bit being stored in the flash memory is first value;
After executing the recovery scenario and repairing to several described physical damage storage units, the method is also Include:
The value of the reparation flag bit stored in the flash memory is provided for characterization not need to repair the DDR Second value.
Present embodiment is executed in the repair process of DDR physical damage based on the value of the reparation flag bit stored in flash memory, It ensure that the reliability of DDR physical damage reparation, and improve the efficiency of DDR physical damage reparation.
Optionally, after executing the recovery scenario and being repaired to several described physical damage storage units, institute State method further include:
The value for the scanning flag position being stored in the flash memory is provided for characterization to need to be scanned the DDR Third value;
The terminal device is restarted, so that the terminal device re-powers, and after the terminal device powers on, According to the value for the scanning flag position being stored in the flash memory, all storage units of the DDR are scanned, it is true according to scanning result Periodical repair succeeds again or repairing failure;
If repairing successfully, the terminal device is restarted, so that the terminal device re-powers, so that the end End equipment enters working condition;
If repairing failure, the terminal device is restarted, so that the terminal device re-powers, and at the end Second stage after end equipment powers on shows that several physical damages storage is single by the display interface of the terminal device The information of first repairing failure.
Present embodiment is executing the value execution DDR physics damage after repaired also based on the scanning flag position stored in flash memory Bad scanning process, and then determine to repair and whether succeed, and show the information of repairing failure in repairing failure, it is further ensured that The reliability of DDR physical damage reparation, improves the efficiency of DDR physical damage reparation.
Optionally, after the terminal device enters working condition, the method also includes:
It calls the interface of bottom to go to read the scanning stored in the flash memory record by application APP and repairs knot Fruit shows the scanning record and the reparation result by the display interface of the terminal device.
Present embodiment is after the completion of reparation, after the terminal device enters working condition, can also remember to scanning Record and reparation result are shown, are allowed a technician to know scanning record and be repaired as a result, further improving user Experience.
Optionally, after the information for showing several physical damage storage unit repairing failures, the method is also Include:
After the volume key for detecting the terminal device is pressed touching preset duration, the next stage that this time is restarted is executed, So that the terminal device enters working condition.
Present embodiment can press touching volume key when terminal device shows physical damage repairing failure by preset duration Mode makes terminal device enter working condition, improves user experience.
Second aspect, the embodiment of the present invention provide a kind of device for repairing DDR physical damage, and device described device includes:
Scanning element scans all storage units of the DDR, determines the DDR after electricity on such devices Middle there are several physical damage storage units of physical damage, and obtain the physics of several physical damage storage units Address;
Processing unit, for judging whether several described physical damage storage units can repair;If it has, then by institute The physical address storage of several physical damage storage units is stated to the default subregion of flash memory;Described device is restarted, so that Described device re-powers, and the first stage after the power-up is based on the physical address pair stored in the default subregion of the flash memory Several described physical damage storage units are repaired;Otherwise, restart described device so that described device again on Electricity, and second stage after the power-up shows several described physical damage storage units not by the display interface of described device The information that can be repaired.
Optionally, the processing unit is specifically used for:
It is judged whether there is and recovery scenario corresponding to the physical damage of the DDR according to the producer of DDR mark;
If it has, then determining that several described physical damage storage units can repair;
Otherwise, it determines several described physical damage storage units can not repair.
Optionally, the processing unit is also used to:
After showing the information that several described physical damage storage units cannot repair, described device is being detected After volume key is pressed touching preset duration, the next stage that this time is restarted is executed, so that described device enters working condition.
Optionally, the processing unit is specifically used for:
It is single to orient several physical damages storage for the physical address for reading the default partitioned storage of the flash memory Member;
It is identified according to the producer of the DDR and determines recovery scenario, and execute the recovery scenario to several described physics Damaged memory unit is repaired.
Optionally, the processing unit is also used to:
After the physical address of several physical damage storage units to be stored to the default subregion to flash memory, by institute The value for stating the reparation flag bit stored in flash memory is provided for the first value that characterization needs to repair the DDR;
Before repairing to several described physical damage storage units, the reparation being stored in the flash memory is determined The value of flag bit is first value;
After executing the recovery scenario and being repaired to several described physical damage storage units, by the flash memory The value of the reparation flag bit of middle storage is provided for the second value that characterization does not need to repair the DDR.
Optionally, the processing unit is also used to:
After executing the recovery scenario and being repaired to several described physical damage storage units, by being stored in The value for stating the scanning flag position in flash memory is provided for the third value that characterization needs to be scanned the DDR;Restarting Described device, so that described device re-powers;
The scanning element is also used to: on such devices after electricity, according to the scanning flag position being stored in the flash memory Value, scan all storage units of the DDR;
The processing unit is also used to: being determined and is repaired successfully or repairing failure according to scanning result;If repairing successfully, weigh New starting described device, so that described device re-powers, so that described device enters working condition;If repairing failure weighs New starting described device, so that described device re-powers, and the second stage after electricity passes through described device on such devices Display interface show the information of several physical damage storage unit repairing failures.
Optionally, the processing unit is also used to:
After described device enters working condition, the interface of bottom is called to go to read in the flash memory and store by APP Scanning record and repair as a result, show that the scanning records and the reparation result by the display interface of described device.
Optionally, the processing unit is also used to:
After the information for showing several physical damage storage unit repairing failures, described device is being detected After volume key is pressed touching preset duration, the next stage that this time is restarted is executed, so that described device enters working condition.
The third aspect, the embodiment of the present invention provide a kind of equipment for repairing DDR physical damage, comprising:
At least one processor, and
The memory being connect at least one described processor communication;
Wherein, the memory is stored with the instruction that can be executed by least one described processor, described at least one Managing device can by the instruction execution embodiment of the present invention first aspect or any of first aspect for executing the memory storage Method described in the embodiment of choosing.
Fourth aspect, the embodiment of the present invention provide a kind of computer readable storage medium, the computer-readable storage medium Matter is stored with computer instruction, when the computer instruction is run on computers, so that computer executes the present invention and implements Method described in any optional embodiment of example first aspect or first aspect.
The one or more technical solutions provided in the embodiment of the present invention, have at least the following technical effects or advantages:
Detection and repair process of the technical solution of the embodiment of the present invention to the DDR physical damage in terminal device, all by Terminal device itself is completed, and is not needed to dismantle DDR from terminal device, is also needed not rely on dedicated the repairing of DDR chip business men Multiple platform improves the remediation efficiency of DDR physical damage, has saved rehabilitation cost to being checked and being repaired;Secondly, in determination When DDR physical damage can repair, the physical address of several physical damage storage units is stored into the default subregion to flash memory, It still can determine that the physical address of several physical damage storage units to guarantee terminal device after restart, further increase reparation Rate and reliability;Moreover, when determining that DDR physical damage can not repair, display cannot be repaired in the reboot process Multiple information allows a technician to know that the physical damage of the DDR cannot be repaired, improves user experience.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings His attached drawing.
Fig. 1 is the flow diagram that the method for DDR physical damage is repaired in the embodiment of the present invention;
Fig. 2 is the structural schematic diagram that the device of DDR physical damage is repaired in the embodiment of the present invention;
Fig. 3 is the structural schematic diagram that the equipment of DDR physical damage is repaired in the embodiment of the present invention.
Specific embodiment
Technical solution of the present invention is described in detail below by attached drawing and specific embodiment, it should be understood that the present invention Specific features in embodiment and embodiment are the detailed description to technical solution of the present invention, rather than to the technology of the present invention The restriction of scheme, in the absence of conflict, the technical characteristic in the embodiment of the present invention and embodiment can be combined with each other.
It is to be appreciated that in the description of the embodiment of the present invention, the vocabulary such as " first ", " second " are only used for distinguishing and retouch The purpose stated, is not understood to indicate or imply relative importance, can not be interpreted as indication or suggestion sequence.In the present invention In the description of embodiment " multiple ", refer to two or more.
Term "and/or" in the embodiment of the present invention, a kind of only incidence relation for describing affiliated partner, expression can be with There are three kinds of relationships, for example, A and/or B, can indicate: individualism A exists simultaneously A and B, these three feelings of individualism B Condition.In addition, character "/" herein, typicallys represent the relationship that forward-backward correlation object is a kind of "or".
DDR physical damage low efficiency, technical problem at high cost are repaired in order to solve the prior art, the embodiment of the present invention mentions For a kind of method, apparatus, equipment and storage medium for repairing DDR physical damage.Wherein, execute this method equipment be with The terminal device of DDR, such as the broadcasting of mobile phone, tablet computer, laptop, server, wearable device, audio/video are set The electronic apparatus system of any electronic equipment with computing capability such as standby or multiple such electronic equipment compositions, this hair Bright embodiment is not particularly limited.
Referring to Fig.1, this method includes:
S11, on the terminal device electricity after, scan all storage units of DDR, determine that there are physical damages in the DDR Several physical damage storage units, and obtain the physical address of several physical damage storage units;
S12, judge whether several physical damage storage units can repair;If it is, thening follow the steps S13;It is no Then, step S14 is executed;
As an alternative embodiment, in the specific implementation process, due to the DDR physical damage of different business mens production Recovery scenario may be different, therefore judge the specific embodiment packet whether several physical damage storage units can repair It includes: the production firm that (Vendor ID) determines the DDR being identified according to the producer of the DDR, is then judged whether there is and the DDR Physical damage corresponding to recovery scenario;If it has, then determining that several physical damage storage units can repair;It is no Then, determine that several physical damage storage units can not repair.
S13, the physical address of several physical damage storage units is stored into the default subregion to flash memory;Restarting The terminal device, so that the terminal device re-powers, and the first stage after the power-up is based in the default subregion of the flash memory The physical address of storage repairs several physical damage storage units;
Specifically, by the default subregion of the physical address of several physical damage storage units storage to flash memory it Afterwards, the value of the reparation flag bit stored in the flash memory is provided for the first value that characterization needs to repair the DDR.Example Such as, it is assumed that repair the characterization of flag bit=1 and need to repair the DDR, repair flag bit=0 characterization do not need to the DDR into Row is repaired, then will repair flag bit and be set as 1.
First stage after the terminal device re-powers first reads the reparation flag bit being stored in the flash memory Value determines that the value for repairing flag bit is the first value, and determination needs to be implemented reparation;Then, the default partitioned storage of the flash memory is read Physical address, orient several physical damage storage units;It is identified according to the producer of the DDR and determines recovery scenario, and The recovery scenario is executed to repair several physical damage storage units.
After executing the recovery scenario and being repaired to several physical damage storage units, it will be stored in the flash memory The value of reparation flag bit be provided for characterization and do not need the second value repaired to the DDR, for example flag bit will be repaired It is set as 0.
In embodiments of the present invention, first stage after the power-up, CPU load data from flash memory, and after the power-up second Stage, CPU load data from the DDR.
In the specific implementation, the specific name of different types of CPU, first stage can be different, for example, the SBL stage, XBL stage, pre-loader stage etc..The title of second stage is specifically as follows the LK stage.
As an alternative embodiment, in the specific implementation process, executing the recovery scenario to several objects After reason damaged memory unit is repaired, in order to determine to repair whether succeed, it can also further scan all of the DDR and deposit Storage unit is determined according to scanning result and is repaired successfully or repairing failure.Specific embodiment includes:
Firstly, will be stored in after executing the recovery scenario and being repaired to several physical damage storage units The value of scanning flag position in the flash memory is provided for the third value that characterization needs to be scanned the DDR;For example, scanning mark Will position=1 characterization needs to be scanned the DDR, and scanning flag position=0 characterization does not need to be scanned the DDR;
Then, the terminal device is restarted, so that the terminal device re-powers, and after the terminal device powers on, According to the value for the scanning flag position being stored in the flash memory, determination needs to be scanned all storage units of DDR, and scanning should All storage units of DDR;
Then, it is determined and is repaired successfully or repairing failure according to scanning result;
If repairing successfully, the terminal device is restarted, so that the terminal device re-powers, so that the terminal device Into working condition;
If repairing failure, the terminal device is restarted, so that the terminal device re-powers, and in the terminal device Second stage after powering on shows several physical damage storage unit repairing failures by the display interface of the terminal device Information.
As an alternative embodiment, in the specific implementation process, being repaired successfully in determination, which enters After working condition, terminal device can also call the interface of bottom to go to read by application program (Application, APP) The scanning record stored in the flash memory and reparation are as a result, show that the scanning records and this is repaired by the display interface of the terminal device Again as a result, allowing a technician to know scanning record and the reparation result.
As an alternative embodiment, in the specific implementation process, determining repairing failure, several objects are shown After the information for managing damaged memory unit repairing failure, which can be pressed in the volume key for detecting the terminal device After touching preset duration, the next stage that this time is restarted is executed, so that the terminal device enters working condition.That is, technology Personnel when the display interface for viewing the terminal device shows the information of several physical damage storage unit repairing failures, Terminal device normal boot-strap can be made by way of long-pressing volume key (such as pressing touching 3s or more), otherwise terminal device is aobvious Show that interface can rest on always the state for showing the information of several physical damage storage unit repairing failures.
S14, the terminal device is restarted, so that the terminal device re-powers, and second stage after the power-up is logical The display interface for crossing the terminal device shows the information that several physical damage storage units cannot repair.
As an alternative embodiment, in the specific implementation process, showing that several physical damages storage is single After the information that member cannot repair, which can be pressed touching preset duration in the volume key for detecting the terminal device Afterwards, the next stage that this time is restarted is executed, to enter working condition.That is, technical staff is viewing the terminal device Display interface when showing the information that several physical damage storage units cannot repair, long-pressing volume key (example can be passed through Such as press touching 3s or more) mode make terminal device normal boot-strap, otherwise the display interface of terminal device can rest on always aobvious Show the state for the information that several physical damage storage units cannot repair.
In the above scheme, the detection to the DDR physical damage in terminal device and repair process, all by terminal device Itself is completed, and is not needed to dismantle DDR from terminal device, is also needed not rely on the dedicated reparation platform pair of DDR chip business men It is checked and is repaired, improved the remediation efficiency of DDR physical damage, saved rehabilitation cost;
When determining that DDR physical damage can repair, the physical address storage of several physical damage storage units is arrived The default subregion of flash memory still can determine that several physical damage storage units physically to guarantee terminal device after restart Location further increases the rate and reliability of reparation;Further reparation result is detected after the repair, is such as repaired successfully Scanning record can be then read after normal boot-strap and is repaired as a result, showing that reparation is lost in the reboot process if repairing failure The information lost allows a technician to the details for knowing reparation, improves user experience;
When determining that DDR physical damage can not repair, the information that cannot be repaired is shown in the reboot process, so that technology Personnel can know that the physical damage of the DDR cannot be repaired, and further increase user experience.
It should be noted that the method in the embodiment of the present invention is not limited to the physical damage for being only applicable to repair DDR, for The physical damage of other kinds of memory can also be applied.It is applied in other kinds of by the method in the embodiment of the present invention When depositing, those skilled in the art can be modified to the method in the embodiment of the present invention and modification is without departing from of the invention Spirit and scope.In this way, if these modifications and variations are within the scope of the claims of the present invention and its equivalent technology, then The embodiment of the present invention is also intended to include these modifications and variations.
Fig. 2 is referred to, based on the same inventive concept, the embodiment of the present invention also provides a kind of dress for repairing DDR physical damage It sets, the device device includes:
Scanning element 21 scans all storage units of the DDR, determines to deposit in the DDR after electricity on the apparatus In several physical damage storage units of physical damage, and obtain the physical address of several physical damage storage units;
Processing unit 22, for judging whether several physical damage storage units can repair;If it has, then should Default subregion of the physical address storage of several physical damage storage units to flash memory;The device is restarted, so that the dress Set and re-power, and the first stage after the power-up based on the physical address stored in the default subregion of the flash memory to this several Physical damage storage unit is repaired;Otherwise, the device is restarted, so that the device re-powers, and after the power-up Second stage shows the information that several physical damage storage units cannot repair by the display interface of the device.
Optionally, which is specifically used for:
Recovery scenario corresponding to the physical damage judged whether there is according to the producer of DDR mark with the DDR;
If it has, then determining that several physical damage storage units can repair;
Otherwise, it determines several physical damage storage units can not repair.
Optionally, which is also used to:
After showing the information that several physical damage storage units cannot repair, in the volume for detecting the device After key is pressed touching preset duration, the next stage that this time is restarted is executed, so that the device enters working condition.
Optionally, which is specifically used for:
The physical address for reading the default partitioned storage of the flash memory orients several physical damage storage units;
It is identified according to the producer of the DDR and determines recovery scenario, and executed the recovery scenario and several physical damages are deposited Storage unit is repaired.
Optionally, which is also used to:
After the physical address of several physical damage storage units to be stored to the default subregion to flash memory, by the sudden strain of a muscle The value for depositing the reparation flag bit of middle storage is provided for the first value that characterization needs to repair the DDR;
Before repairing to several physical damage storage units, the reparation mark being stored in the flash memory is determined The value of position is first value;
After executing the recovery scenario and being repaired to several physical damage storage units, it will be stored in the flash memory The value of reparation flag bit be provided for characterization and do not need the second value repaired to the DDR.
Optionally, the processing unit 22 is also used to:
After executing the recovery scenario and being repaired to several described physical damage storage units, by being stored in The value for stating the scanning flag position in flash memory is provided for the third value that characterization needs to be scanned the DDR;Restarting Described device, so that described device re-powers;
The scanning element 21 is also used to: on such devices after electricity, according to the scanning flag being stored in the flash memory The value of position, scans all storage units of the DDR;
The processing unit 22 is also used to: being determined and is repaired successfully or repairing failure according to scanning result;If repairing successfully, Described device is restarted, so that described device re-powers, so that described device enters working condition;If repairing failure, Described device is restarted, so that described device re-powers, and the second stage after electricity passes through the dress on such devices The display interface set shows the information of several physical damage storage unit repairing failures.
Optionally, which is also used to:
After the device enters working condition, the interface of bottom is called to go to read sweeping of storing in the flash memory by APP Record and reparation are traced as a result, showing scanning record and the reparation result by the display interface of the device.
Optionally, which is also used to:
After the information for showing several physical damage storage unit repairing failures, in the volume for detecting the device After key is pressed touching preset duration, the next stage that this time is restarted is executed, so that the device enters working condition.
This method of the present invention and device based on the same inventive concept, since the principle that method and device solves the problems, such as is similar, The method that the performed specific implementation operated of the above each unit is referred to reparation DDR physical damage of the embodiment of the present invention The step of middle correspondence, therefore the implementation of apparatus and method can be with cross-reference, overlaps will not be repeated.
Fig. 3 is referred to, based on the same inventive concept, the embodiment of the present invention also provides a kind of setting for reparation DDR physical damage It is standby, comprising:
At least one processor 31, and
With the memory 32 of at least one processor 31 communication connection;
Wherein, which is stored with the instruction that can be executed by least one processor 31, at least one processing Method of the device 31 by executing the instruction execution embodiment of the present invention reparation DDR physical damage of the memory 32 storage.
Optionally, processor 31 can specifically include central processing unit (central processing unit, CPU), spy Determine application integrated circuit (application specific integrated circuit, ASIC), can be one or more For controlling the integrated circuit of program execution, use site programmable gate array (field programmable gate can be Array, FPGA) exploitation hardware circuit, can be baseband processor.
Optionally, processor 31 may include at least one processing core.
Optionally, memory 32 may include read-only memory (read only memory, ROM), random access memory Device (random access memory, RAM) and magnetic disk storage.Memory 32 is required when running for storage processor 31 Data.
Based on the same inventive concept, the embodiment of the present invention also provides a kind of computer readable storage medium, which can It reads storage medium and is stored with computer instruction, when the computer instruction is run on computers, so that computer executes this hair The method of bright embodiment reparation DDR physical damage.
It should be understood by those skilled in the art that, the embodiment of the present invention can provide as method, system or computer program Product.Therefore, complete hardware embodiment, complete software embodiment or reality combining software and hardware aspects can be used in the present invention Apply the form of example.Moreover, it wherein includes the computer of computer usable program code that the present invention, which can be used in one or more, The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) produces The form of product.
The present invention be referring to according to the method for the embodiment of the present invention, the process of equipment (system) and computer program product Figure and/or block diagram describe.It should be understood that every one stream in flowchart and/or the block diagram can be realized by computer program instructions The combination of process and/or box in journey and/or box and flowchart and/or the block diagram.It can provide these computer programs Instruct the processor of general purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices to produce A raw machine, so that being generated by the instruction that computer or the processor of other programmable data processing devices execute for real The device for the function of being specified in present one or more flows of the flowchart and/or one or more blocks of the block diagram.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to include these modifications and variations.

Claims (18)

1. a kind of method for repairing Double Data Rate synchronous DRAM DDR physical damage, which is characterized in that be applied to eventually End equipment, which comprises
After the terminal device powers on, all storage units of the DDR are scanned, determine that there are physics damages in the DDR Several bad physical damage storage units, and obtain the physical address of several physical damage storage units;
Judge whether several described physical damage storage units can repair;
If it has, then by the default subregion of the physical address storage of several physical damage storage units to flash memory;Again Start the terminal device, so that the terminal device re-powers, and the first stage after the power-up is based on the flash memory The physical address stored in default subregion repairs several described physical damage storage units;
Otherwise, the terminal device is restarted, so that the terminal device re-powers, and second stage after the power-up is logical The display interface for crossing the terminal device shows the information that several described physical damage storage units cannot repair.
2. the method as described in claim 1, which is characterized in that judge that several described physical damage storage units whether can It repairs, specifically includes:
It is judged whether there is and recovery scenario corresponding to the physical damage of the DDR according to the producer of DDR mark;
If it has, then determining that several described physical damage storage units can repair;
Otherwise, it determines several described physical damage storage units can not repair.
3. such as the described in any item methods of claims 1 or 2, which is characterized in that showing several physical damages storage After the information that unit cannot be repaired, the method also includes:
After the volume key for detecting the terminal device is pressed touching preset duration, the next stage that this time is restarted is executed, so that The terminal device enters working condition.
4. method according to claim 1 or 2, which is characterized in that described in being stored in the default subregion based on the flash memory Physical address repairs several described physical damage storage units, comprising:
The physical address for reading the default partitioned storage of the flash memory orients several described physical damage storage units;
It is identified according to the producer of the DDR and determines recovery scenario, and execute the recovery scenario to several described physical damages Storage unit is repaired.
5. method as claimed in claim 4, which is characterized in that by several described physical damage storage units physically After the storage to the default subregion of flash memory of location, the method also includes:
The value of the reparation flag bit stored in the flash memory is provided for first that characterization needs to repair the DDR Value;
Before being repaired to several described physical damage storage units, further includes:
The value for determining the reparation flag bit being stored in the flash memory is first value;
After executing the recovery scenario and repairing to several described physical damage storage units, the method is also wrapped It includes:
That the value of the reparation flag bit stored in the flash memory is provided for that characterization do not need to repair the DDR Two-value.
6. method as claimed in claim 4, which is characterized in that executing the recovery scenario to several described physical damages After storage unit is repaired, the method also includes:
The value for the scanning flag position being stored in the flash memory is provided for that characterization needs to be scanned the DDR Three values;
The terminal device is restarted, so that the terminal device re-powers, and after the terminal device powers on, according to It is stored in the value of the scanning flag position in the flash memory, scans all storage units of the DDR, is repaired according to scanning result determination Multiple success or repairing failure;
If repairing successfully, the terminal device is restarted, so that the terminal device re-powers, so that the terminal is set It is standby to enter working condition;
If repairing failure, the terminal device is restarted, so that the terminal device re-powers, and is set in the terminal Show that several described physical damage storage units are repaired by the display interface of the terminal device for the second stage after powering on The information to fail again.
7. method as claimed in claim 6, which is characterized in that after the terminal device enters working condition, the side Method further include:
The interface of bottom is called to go to read the scanning stored in the flash memory record and repair as a result, logical by application APP The display interface for crossing the terminal device shows the scanning record and the reparation result.
8. method as claimed in claim 6, which is characterized in that showing several physical damage storage unit reparations mistake After the information lost, the method also includes:
After the volume key for detecting the terminal device is pressed touching preset duration, the next stage that this time is restarted is executed, so that The terminal device enters working condition.
9. a kind of device for repairing DDR physical damage, which is characterized in that device described device includes:
Scanning element scans all storage units of the DDR, determines to deposit in the DDR after electricity on such devices In several physical damage storage units of physical damage, and obtain several described physical damage storage units physically Location;
Processing unit, for judging whether several described physical damage storage units can repair;If if it has, then will be described Default subregion of the physical address storage of dry physical damage storage unit to flash memory;Described device is restarted, so that described Device re-powers, and the first stage after the power-up based on the physical address stored in the default subregion of the flash memory to described Several physical damage storage units are repaired;Otherwise, described device is restarted, so that described device re-powers, and Second stage after the power-up shows that several described physical damage storage units cannot repair by the display interface of described device Multiple information.
10. device as claimed in claim 9, which is characterized in that the processing unit is specifically used for:
It is judged whether there is and recovery scenario corresponding to the physical damage of the DDR according to the producer of DDR mark;
If it has, then determining that several described physical damage storage units can repair;
Otherwise, it determines several described physical damage storage units can not repair.
11. such as the described in any item devices of claim 9 or 10, which is characterized in that the processing unit is also used to:
After showing the information that several described physical damage storage units cannot repair, in the volume for detecting described device After key is pressed touching preset duration, the next stage that this time is restarted is executed, so that described device enters working condition.
12. the device as described in claim 9 or 10, which is characterized in that the processing unit is specifically used for:
The physical address for reading the default partitioned storage of the flash memory orients several described physical damage storage units;
It is identified according to the producer of the DDR and determines recovery scenario, and execute the recovery scenario to several described physical damages Storage unit is repaired.
13. device as claimed in claim 12, which is characterized in that the processing unit is also used to:
After the physical address of several physical damage storage units to be stored to the default subregion to flash memory, by the sudden strain of a muscle The value for depositing the reparation flag bit of middle storage is provided for the first value that characterization needs to repair the DDR;
Before repairing to several described physical damage storage units, the reparation mark being stored in the flash memory is determined The value of position is first value;
After executing the recovery scenario and being repaired to several described physical damage storage units, it will be deposited in the flash memory The value of the reparation flag bit of storage is provided for the second value that characterization does not need to repair the DDR.
14. device as claimed in claim 12, which is characterized in that the processing unit is also used to:
After executing the recovery scenario and repairing to several described physical damage storage units, the sudden strain of a muscle will be stored in The value of scanning flag position in depositing is provided for the third value that characterization needs to be scanned the DDR;Described in restarting Device, so that described device re-powers;
The scanning element is also used to: on such devices after electricity, according to the value for the scanning flag position being stored in the flash memory, Scan all storage units of the DDR;
The processing unit is also used to: being determined and is repaired successfully or repairing failure according to scanning result;If repairing successfully, open again Dynamic described device, so that described device re-powers, so that described device enters working condition;If repairing failure opens again Dynamic described device, so that described device re-powers, and the second stage after electricity passes through the aobvious of described device on such devices Show the information of several physical damage storage unit repairing failures described in interface display.
15. device as claimed in claim 14, which is characterized in that the processing unit is also used to:
After described device enters working condition, the interface of bottom is called to go to read sweeping of storing in the flash memory by APP Record and reparation are traced as a result, showing the scanning record and the reparation result by the display interface of described device.
16. device as claimed in claim 14, which is characterized in that the processing unit is also used to:
After the information for showing several physical damage storage unit repairing failures, in the volume for detecting described device After key is pressed touching preset duration, the next stage that this time is restarted is executed, so that described device enters working condition.
17. a kind of equipment for repairing DDR physical damage characterized by comprising
At least one processor, and
The memory being connect at least one described processor communication;
Wherein, the memory is stored with the instruction that can be executed by least one described processor, at least one described processor By the instruction execution method of any of claims 1-8 for executing the memory storage.
18. a kind of computer readable storage medium, which is characterized in that the computer-readable recording medium storage has computer to refer to It enables, when the computer instruction is run on computers, so that computer perform claim requires side described in any one of 1-8 Method.
CN201811600853.3A 2018-12-26 2018-12-26 Method, device, equipment and storage medium for repairing DDR physical damage Active CN109684125B (en)

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CN110675911A (en) * 2019-09-24 2020-01-10 上海闻泰电子科技有限公司 DDR (double data Rate) repairing method, device, terminal and storage medium
CN111415700A (en) * 2020-04-24 2020-07-14 西安紫光国芯半导体有限公司 Repair method, repair device and computer storage medium
CN113064773A (en) * 2021-03-08 2021-07-02 山东英信计算机技术有限公司 Memory PPR (Peer-to-Peer) testing and repairing method, system and storage medium
CN113900843A (en) * 2021-09-08 2022-01-07 联想(北京)有限公司 Detection and repair method, device, equipment and readable storage medium

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CN110675911A (en) * 2019-09-24 2020-01-10 上海闻泰电子科技有限公司 DDR (double data Rate) repairing method, device, terminal and storage medium
CN110675911B (en) * 2019-09-24 2021-08-24 上海闻泰电子科技有限公司 DDR (double data Rate) repairing method, device, terminal and storage medium
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CN113064773A (en) * 2021-03-08 2021-07-02 山东英信计算机技术有限公司 Memory PPR (Peer-to-Peer) testing and repairing method, system and storage medium
CN113064773B (en) * 2021-03-08 2023-03-24 山东英信计算机技术有限公司 Memory PPR (Peer-to-Peer) testing and repairing method, system and storage medium
CN113900843A (en) * 2021-09-08 2022-01-07 联想(北京)有限公司 Detection and repair method, device, equipment and readable storage medium

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