CN109678530A - A kind of insulating powder and preparation method thereof - Google Patents
A kind of insulating powder and preparation method thereof Download PDFInfo
- Publication number
- CN109678530A CN109678530A CN201910070012.4A CN201910070012A CN109678530A CN 109678530 A CN109678530 A CN 109678530A CN 201910070012 A CN201910070012 A CN 201910070012A CN 109678530 A CN109678530 A CN 109678530A
- Authority
- CN
- China
- Prior art keywords
- powder
- nitride powder
- aluminium nitride
- insulating
- high temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a kind of insulating powders and preparation method thereof, two end number mixing insulating powder has been mixed to prepare by the aluminium nitride powder and boron nitride powder that deactivate high temperature, so that its meet under low-temperature oxidation atmosphere simultaneously and high temperature inert atmosphere under requirement, have the effect of product isolation lubrication and will not slide, it can effectively prevent occurring to chemically react in sintering process simultaneously bonding with aluminium nitride substrate, it is controlled conducive to the angularity of large-size substrate, 90% or more substrate warp degree controls within 5 ‰, just meet products application demand without ceramic levelling process, reach the industry to insulating powder under different atmosphere and high temperature isolation lubricating requirement.
Description
Technical field
The invention belongs to electronic ceramics encapsulation fields, and in particular to it is a kind of for aluminum nitride ceramic substrate binder removal every
Production method from powder and the insulating powder.
Background technique
The multifunction and the degree of automation equipped with industries such as electronic information, power electronics, semiconductor lasers are increasingly
It improving, it is desirable that electronics systems must have the characteristics that fully functional, small in size, light weight, high efficiency, high power density,
It thus promotes relevant electronic device to rapidly develop towards high-power, highly integrated and micromation direction, be adapted therewith
More stringent requirements are proposed in quality for the substrate of carrying electronic circuit, especially the stability and thermal conductivity of baseplate material.It passes
The bearing substrate of system mainly has aluminium oxide (Al2O3), beryllium oxide (BeO), wherein Al2O3Substrate is because of thermal conductivity (20~30W/m
K) low, heat dissipation performance does not reach requirement, and BeO is gradually eliminated because its process generates due to powder is poisoned, and aluminium nitride
(AlN) with the high heat conductance of 160~230W/mK, low-k, nonhazardous, good thermal stability the advantages that, gradually exist
Power device field replaces traditional Al2O3, BeO substrate.Currently, AlN substrate swashs in high power module circuit, semiconductor
The fields such as light device and LED show huge superiority, have extensive market prospects.
The common forming method of AlN substrate has dry-pressing formed, injection molding and tape casting (tape casting) etc., base
The fabrication processing of plate mainly has green compact molding, dumping, sintering, post-processing etc..In order to improve the production efficiency, general dumping,
Sintering process all takes the mode of multi-disc lamination, is isolated between two panels green compact using insulating powder.Wherein aluminium nitride green compact dumping is big
Part is carried out in 600 DEG C of oxidizing atmospheres below, and is sintered and is then carried out under 1850 DEG C or so inertia or reducing atmosphere.Cause
This, aluminium nitride ceramics field and related similar field should meet lubrication isolation effect to the more demanding of insulating powder, full again
Requirement under sufficient low temperature (700 DEG C or less) oxidizing atmosphere and under hot environment (inertia or reducing atmosphere), simultaneously
It is required it is required that too smooth to prevent transfer process sliding etc. cannot occur for insulating powder.General common insulating powder (aluminium oxide, oxidation
Zirconium, graphite powder, silica flour etc.) it is not able to satisfy that low temperature is anti-oxidant and high-temperature adhesion resistant requirement, such as graphite composite powder is excellent insulating powder,
But its is maximum the disadvantage is that low-temperature resistance (600 DEG C or less) oxidation susceptibility is poor, in air when temperature is more than that 300 DEG C i.e. generation is obvious
Oxidation；Aluminium oxide, zirconium oxide, graphite powder and silica flour can not be used above at 1600 DEG C, while aluminium nitride and these powder
Body reacts at high temperature generates aluminium salt compound.Currently, most of aluminium nitride substrate manufacturer generally use it is special
Bulky grain aluminium nitride powder, which handles deactivation by multiple high temp, then is produced by crushing and screening, and the insulating powder is main
There are the particle of powder is bigger than normal, substrate is also easy to produce warpage when sintering, will cause substrate cracking when serious；Meanwhile treated nitrogen
Change aluminium powder body cannot directly judge whether it is active, exist sintering bonding die risk.
Summary of the invention
Based on this, the present invention provides a kind of insulating powders, and high temperature is taken to remove active aluminium nitride powder and boron nitride powder
The two end number mixing insulating powder of body has so that it meets under low-temperature oxidation atmosphere simultaneously with requirement under high temperature inert atmosphere
Product is isolated the effect of lubrication and will not be slid, while can effectively prevent that chemical reaction and aluminium nitride occur in sintering process
Substrate bonds, thus reach the industry to insulating powder under different atmosphere and high temperature isolation lubricating requirement.
To achieve the goals above, the invention adopts the following technical scheme:
A kind of insulating powder, the insulating powder by pass through high temperature deactivate aluminium nitride powder and boron nitride powder mixing and
At.
Preferably, the mass ratio of boron nitride powder and aluminium nitride powder is (5~8): (5~2) in the insulating powder.
Further, the mean particle size D 50 of the aluminium nitride powder is 0.5~1.6 μm, and specific surface area is 2.8~5m2/
G, oxygen content is less than 1.5%；
The mean particle size D 50 of the boron nitride powder is 0.5~10 μm, and specific surface area is 4~10m2/ g, oxygen content are less than
0.9%.
It is another object of the present invention to provide a kind of production methods of above-mentioned insulating powder, comprising the following steps:
A, aluminium nitride powder and boron nitride powder are subjected to decontamination processing respectively；
B, by after decontamination aluminium nitride powder and boron nitride powder respectively be crushed sieving after high temperature deactivate；
C, aluminium nitride powder and boron nitride powder after deactivating high temperature are uniformly mixed, and insulating powder is made；
Further, in step a, boron nitride powder is is placed in Muffle furnace by the decontamination processing of boron nitride powder, with 5
~10 DEG C/min rate keeps the temperature 2~10h after being warming up to 800~900 DEG C；
Aluminium nitride powder is is placed in Muffle furnace by the decontamination processing of aluminium nitride powder, with 5~10 DEG C/min rate liter
Temperature is to keeping the temperature 1~12h after 600~700 DEG C.
Further, in step b, the sieving uses 40~100 mesh screens.
Further, in step b, the high temperature removes active specific steps are as follows: by the aluminium nitride powder and nitridation
Boron powder is respectively placed in sintering furnace, and temperature-gradient method is to 1850~2000 DEG C and keeps the temperature 2~8h.
Preferably, the specific steps of the temperature-gradient method are as follows: be warming up to 1200 DEG C with 10~15 DEG C/min, then with 3~8 DEG C
It is warming up to 1850~2000 DEG C and keeps the temperature 2~8h.
Further, in step c, the uniformly mixed specific steps are as follows: two kinds of powders mixing after deactivating high temperature
Uniformly, then successively pass through coarse crushing, be ground up, sieved.It is understood that coarse crushing here, be ground up, sieved use is ability
The conventional means known according to technical staff, do not do here it is detailed repeat, the sieve of sieving can be according to preparing ceramic substrate
It needs to be adjusted.
Compared with prior art, the invention has the following advantages:
1, the present invention makes two kinds of powders of aluminium nitride and boron nitride lose sintering activity using high-temperature process, can be effectively prevented
Sintering process occurs chemical reaction and causes to bond with AlN substrate.
2, insulating powder of the invention can under air, 600 DEG C it is used below, while can be in inert atmosphere or reduction
2000 DEG C or so uses in atmosphere can meet a variety of ceramics dumping and refractory ceramics inert atmosphere under low-temperature oxidation simultaneously and burn
Knot uses.
3, the present invention can make isolation powder layer thickness be reduced to 10~30 μm, be conducive to big ruler using fine powder
The angularity of very little substrate controls, and 90% or more substrate warp degree controls within 5 ‰, just meets production without ceramic levelling process
Product application demand.
4, it can effectively prevent bonding die added with boron nitride powder in insulating powder of the invention, while AlN substrate table can be made
Face is smooth, and substrate roughness is controlled at 0.5 μm or less.
Specific embodiment
To facilitate the understanding of the present invention, below in conjunction with specific embodiments to invention is more fully described.But
It is that the invention can be realized in many different forms, however it is not limited to embodiments described herein.On the contrary, providing
The purpose of these embodiments is to make to make the present disclosure more fully understandable.
Unless otherwise defined, all technical and scientific terms used herein and belong to technical field of the invention
The normally understood meaning of technical staff is identical.Term as used herein in the specification of the present invention is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.
Embodiment 1
The average particle size (D50) of AlN powder is 1.6 μm in the present embodiment, and specific surface area BET is 2.8m2/ g, oxygen content are small
In 1.5%；The average particle size (D50) of BN powder is 0.5 μm, and specific surface area BET is 10m2/ g, oxygen content is less than 0.9%.
Insulating powder making step includes:
40 mesh mesh screens were crushed after BN powder is rapidly heated with 10 DEG C/min to 900 DEG C of heat preservation 2h；By AlN powder with 10
DEG C/min was crushed 40 mesh mesh screens after being warming up to 600 DEG C of heat preservation 1h；
AlN powder and BN powder after step sieving are respectively placed in sintering furnace and are first warming up to 1200 DEG C with 10 DEG C/min,
It is warming up to again with 3 DEG C/min at 1950 DEG C and isothermal holding 6h；
The BN powder of high temperature deactivation and AlN powder are uniformly mixed according to mass ratio 5:5, using coarse crushing, grinding, mistake
It is mixed after 200 mesh screens, insulating powder is made.
Insulating powder in the present embodiment is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, every is sprayed
Ceramic chips are stacked afterwards, and every pile is 12~16, then by every pile piece in 600 DEG C of air draft glue discharging furnace 22~40h of dumping, most
The ceramic chips after dumping are sintered 4h under 1800 DEG C of nitrogen atmosphere afterwards.
Embodiment 2
The average particle size (D50) of AlN powder is 1.6 μm in the present embodiment, and specific surface area BET is 2.8m2/ g, oxygen content are small
In 1.5%；The average particle size (D50) of BN powder is 0.5 μm, and specific surface area BET is 10m2/ g, oxygen content is less than 0.9%.
Insulating powder making step includes:
40 mesh mesh screens were crushed after BN powder is rapidly heated with 5 DEG C/min to 800 DEG C of heat preservation 4h；By AlN powder with 10
DEG C/min was crushed 40 mesh mesh screens after being warming up to 600 DEG C of heat preservation 5h；
By after sieving AlN powder and BN powder be respectively placed in sintering furnace and be first warming up to 1200 DEG C with 10 DEG C/min, then
It is warming up to 3 DEG C/min at 1950 DEG C and isothermal holding 8h；.
BN powder and AlN powder after high temperature is deactivated are mixed according to mass ratio 6:4, then successively pass through coarse crushing, grinding, mistake
200 mesh screens are mixed, and insulating powder is made.
Insulating powder in the present embodiment is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, every is sprayed
Ceramic chips are stacked afterwards, and every pile is 12~16, then by every pile piece in 600 DEG C of air draft glue discharging furnace 22~40h of dumping, most
The ceramic chips after dumping are sintered 4h under 1800 DEG C of nitrogen atmosphere afterwards.
Embodiment 3
The average particle size (D50) of AlN powder is 1.6 μm in the present embodiment, and specific surface area BET is 2.8m2/ g, oxygen content are small
In 1.5%；The average particle size (D50) of BN powder is 0.5 μm, and specific surface area BET is 10m2/ g, oxygen content is less than 0.9%.
Insulating powder making step includes:
40 mesh mesh screens were crushed after BN powder is rapidly heated with 10 DEG C/min to 900 DEG C of heat preservation 4h；By AlN powder with 10
DEG C/min was crushed 40 mesh mesh screens after being warming up to 600 DEG C of heat preservation 5h；
By after sieving AlN powder and BN powder be respectively placed in sintering furnace and be first warming up to 1200 DEG C with 10 DEG C/min, then
It is warming up to 3 DEG C/min at 1950 DEG C and isothermal holding 8h；
BN powder and AlN powder after high temperature is deactivated are mixed according to mass ratio 7:3, then successively pass through coarse crushing, grinding, mistake
200 mesh screens are mixed, and insulating powder is made.
Insulating powder in the present embodiment is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, every is sprayed
Ceramic chips are stacked afterwards, and every pile is 12~16, then by every pile piece in 600 DEG C of air draft glue discharging furnace 22~40h of dumping, most
The ceramic chips after dumping are sintered 4h under 1800 DEG C of nitrogen atmosphere afterwards.
Embodiment 4
The average particle size (D50) of AlN powder is 1.6 μm in the present embodiment, and specific surface area BET is 2.8m2/ g, oxygen content are small
In 1.5%；The average particle size (D50) of BN powder is 0.5 μm, and specific surface area BET is 10m2/ g, oxygen content is less than 0.9%.
Insulating powder making step includes:
40 mesh mesh screens were crushed after BN powder is rapidly heated with 10 DEG C/min to 900 DEG C of heat preservation 6h；By AlN powder with 10
DEG C/min was crushed 40 mesh mesh screens after being warming up to 600 DEG C of heat preservation 8h；
By after sieving AlN powder and BN powder be respectively placed in sintering furnace and be first warming up to 1200 DEG C with 10 DEG C/min, then
It is warming up to 3 DEG C/min at 1950 DEG C and isothermal holding 8h；
BN powder and AlN powder after high temperature is deactivated are mixed according to mass ratio 8:2, then successively pass through coarse crushing, grinding, mistake
200 mesh screens are mixed, and insulating powder is made.
Insulating powder in the present embodiment is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, every is sprayed
Ceramic chips are stacked afterwards, and every pile is 12~16, then by every pile piece in 600 DEG C of air draft glue discharging furnace 22~40h of dumping, most
The ceramic chips after dumping are sintered 4h under 1800 DEG C of nitrogen atmosphere afterwards.
Embodiment 5
The average particle size (D50) of AlN powder is 1.6 μm in the present embodiment, and specific surface area BET is 2.8m2/ g, oxygen content are small
In 1.5%；The average particle size (D50) of BN powder is 0.5 μm, and specific surface area BET is 10m2/ g, oxygen content is less than 0.9%.
Insulating powder making step includes:
40 mesh mesh screens were crushed after BN powder is rapidly heated with 10 DEG C/min to 900 DEG C of heat preservation 4h；By AlN powder with 10
DEG C/min was crushed 40 mesh mesh screens after being warming up to 600 DEG C of heat preservation 5h；
By after sieving AlN powder and BN powder be respectively placed in sintering furnace and be first warming up to 1200 DEG C with 10 DEG C/min, then
It is warming up to 3 DEG C/min at 1950 DEG C and isothermal holding 8h；
BN powder and AlN powder after high temperature is deactivated are mixed according to mass ratio 8:2, then successively pass through coarse crushing, grinding, mistake
200 mesh screens are mixed, and insulating powder is made.
Insulating powder in the present embodiment is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, every is sprayed
Ceramic chips are stacked afterwards, and every pile is 12~16, then by every pile piece in 600 DEG C of air draft glue discharging furnace 22~40h of dumping, most
The ceramic chips after dumping are sintered 2h under 2000 DEG C of nitrogen atmosphere afterwards.
Embodiment 6
The average particle size (D50) of AlN powder is 0.5 μm in the present embodiment, and specific surface area BET is 5m2/ g, oxygen content are less than
1.5%；The average particle size (D50) of BN powder is 0.5 μm, and specific surface area BET is 10m2/ g, oxygen content is less than 0.9%.
Insulating powder making step includes:
60 mesh mesh screens were crushed after BN powder is rapidly heated with 10 DEG C/min to 900 DEG C of heat preservation 3h；By AlN powder with 5
DEG C/min was crushed 40 mesh mesh screens after being warming up to 600 DEG C of heat preservation 8h；
By after sieving AlN powder and BN powder be respectively placed in sintering furnace and be first warming up to 1200 DEG C with 10 DEG C/min, then
It is warming up to 5 DEG C/min at 2000 DEG C and isothermal holding 2h；
BN powder and AlN powder after high temperature is deactivated are mixed according to mass ratio 6:4, then successively pass through coarse crushing, grinding, mistake
200 mesh screens close, and insulating powder is made.
Insulating powder in the present embodiment is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, every is sprayed
Ceramic chips are stacked afterwards, and every pile is 12~16, then by every pile piece in 600 DEG C of air draft glue discharging furnace 22~40h of dumping, most
The ceramic chips after dumping are sintered 4h under 1800 DEG C of nitrogen atmosphere afterwards.
Embodiment 7
The average particle size (D50) of AlN powder is 1.6 μm in the present embodiment, and specific surface area BET is 2.8m2/ g, oxygen content are small
In 1.5%；The average particle size (D50) of BN powder is 10 μm, and specific surface area BET is 4m2/ g, oxygen content is less than 0.9%.
Insulating powder making step includes:
100 mesh mesh screens were crushed after BN powder is rapidly heated with 10 DEG C/min to 900 DEG C of heat preservation 10h；By AlN powder with
10 DEG C/min is crushed 100 mesh mesh screens after being warming up to 700 DEG C of heat preservation 12h；
By after sieving AlN powder and BN powder be respectively placed in sintering furnace and be first warming up to 1200 DEG C with 15 DEG C/min, then
It is warming up to 8 DEG C/min at 1850 DEG C and isothermal holding 8h；；
BN powder and AlN powder after high temperature is deactivated are mixed according to mass ratio 6:4, then successively pass through coarse crushing, grinding, mistake
200 mesh screens are mixed, and insulating powder is made.
Insulating powder in the present embodiment is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, every is sprayed
Ceramic chips are stacked afterwards, and every pile is 12~16, then by every pile piece in 600 DEG C of air draft glue discharging furnace 22~40h of dumping, most
The ceramic chips after dumping are sintered 4h under 1800 DEG C of nitrogen atmosphere afterwards.
Comparative example 1 (100%AlN)
The average particle size (D50) of AlN powder is 1.6 μm in this comparative example, and specific surface area BET is 2.8m2/ g, oxygen content are small
In 1.5%；
Insulating powder making step includes:
40 mesh mesh screens were crushed after AlN powder is warming up to 600 DEG C of heat preservation 8h with 10 DEG C/min；
AlN powder after sieving is placed in sintering furnace and is first warming up to 1200 DEG C with 10 DEG C/min, then with 3 DEG C/min heating
To at 1950 DEG C and isothermal holding 8h；
AlN powder successively passes through coarse crushing, grinding, crosses 200 mesh screens after high temperature is deactivated, and aluminium nitride insulating powder is made.
Aluminium nitride insulating powder in this comparative example is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, it will be every
Piece sprinkling after ceramic chips it is stacked, it is every pile be 12~16, then by every pile piece 600 DEG C of air draft glue discharging furnace dumpings 22~
Ceramic chips after dumping are finally sintered 4h under 1800 DEG C of nitrogen atmosphere by 40h.
Comparative example 2 (100%BN)
The average particle size (D50) of BN powder is 0.5 μm in this comparative example, and specific surface area BET is 10m2/ g, oxygen content are less than
0.9%.
Insulating powder making step includes:
40 mesh mesh screens were crushed after BN powder is rapidly heated with 10 DEG C/min to 900 DEG C of heat preservation 6h；
BN powder after sieving is placed in sintering furnace and is first warming up to 1200 DEG C with 10 DEG C/min, then with 3 DEG C/min heating
To at 1950 DEG C and isothermal holding 8h；
BN powder after high temperature is deactivated successively passes through coarse crushing, grinding, crosses 200 mesh screens, and boron nitride insulating powder is made.
Boron nitride insulating powder in this comparative example is uniformly sprayed on 235mm × 170mm aluminium nitride ceramic chips, it will be every
Piece sprinkling after ceramic chips it is stacked, it is every pile be 12~16, then by every pile piece 600 DEG C of air draft glue discharging furnace dumpings 22~
Ceramic chips after dumping are finally sintered 4h under 1800 DEG C of nitrogen atmosphere by 40h.
To aluminium nitride substrate obtained in Examples 1 to 7 and comparative example 1~2 according to GJB3520 " aluminium nitride ceramic substrate
Specification " carry out angularity first-time qualification rate, whether bonding die, whether slide and whether have stain etc. and carry out test analysis, test knot
Fruit see the table below:
| Angularity first-time qualification rate | Whether bonding die | Roughness Ra (μm) | Whether slide | Whether hickie stain is had | |
| Embodiment 1 | 92 | It is no | 0.38-0.48 | It is no | It is no |
| Embodiment 2 | 90 | It is no | 0.33-0.48 | It is no | It is no |
| Embodiment 3 | 89 | It is no | 0.35-0.43 | It is no | It is no |
| Embodiment 4 | 85 | It is no | 0.26-0.4 | It is no | It is no |
| Embodiment 5 | 83 | It is no | 0.30-0.42 | It is no | It is no |
| Embodiment 6 | 86 | It is no | 0.35-0.48 | It is no | It is no |
| Embodiment 7 | 88 | It is no | 0.38-0.45 | It is no | It is no |
| Comparative example 1 | 10 | A little | 0.5-0.75 | It is no | A little |
| Comparative example 2 | 45 | It is no | 0.25-0.35 | It is | It is no |
Can be seen that the insulating powder in the present invention from upper table data, overcome single insulating powder there are the problem of, adopt simultaneously
It takes insulating powder of the invention also effectively to control the warpage issues of substrate and the stain hickie phenomenon of substrate, effectively increases product
Quality.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (9)
1. a kind of insulating powder, which is characterized in that the aluminium nitride powder and boron nitride powder that the insulating powder is deactivated by passing through high temperature
Body mixes.
2. insulating powder as described in claim 1, which is characterized in that boron nitride powder and aluminium nitride powder in the insulating powder
Mass ratio is (5 ~ 8): (5 ~ 2).
3. insulating powder as claimed in claim 1 or 2, which is characterized in that the mean particle size D 50 of the aluminium nitride powder be 0.5 ~
1.6 μm, specific surface area is 2.8 ~ 5m2/ g, oxygen content is less than 1.5%；
The mean particle size D 50 of the boron nitride powder is 0.5 ~ 10 μm, and specific surface area is 4 ~ 10m2/ g, oxygen content is less than 0.9%.
4. a kind of production method of insulating powder as claimed in claim 3, which comprises the following steps:
A, aluminium nitride powder and boron nitride powder are subjected to decontamination processing respectively；
B, by after decontamination aluminium nitride powder and boron nitride powder respectively be crushed sieving after high temperature deactivate；
C, aluminium nitride powder and boron nitride powder after deactivating high temperature are uniformly mixed, and insulating powder is made.
5. production method as claimed in claim 4, which is characterized in that in step a, the decontamination processing of boron nitride powder is will
Boron nitride powder is placed in Muffle furnace, and 2 ~ 10h is kept the temperature after being warming up to 800 ~ 900 DEG C with 5 ~ 10 DEG C/min rate；
The decontamination processing of aluminium nitride powder is warming up to for aluminium nitride powder to be placed in Muffle furnace with 5 ~ 10 DEG C/min rate
1 ~ 12h is kept the temperature after 600 ~ 700 DEG C.
6. production method as claimed in claim 4, which is characterized in that in step b, the sieving uses 40 ~ 100 mesh screens.
7. production method as claimed in claim 4, which is characterized in that in step b, the specific steps of the high temperature deactivation are as follows:
By after broken sieving aluminium nitride powder and boron nitride powder be respectively placed in sintering furnace, temperature-gradient method to 1850 ~ 2000 DEG C simultaneously
Keep the temperature 2 ~ 8h.
8. production method as claimed in claim 7, which is characterized in that the temperature-gradient method the specific steps are with 10 ~ 15 DEG C/
Min is warming up to 1200 DEG C, then is warming up to 1850 ~ 2000 DEG C with 3 ~ 8 DEG C and keeps the temperature 2 ~ 8h.
9. production method as claimed in claim 4, which is characterized in that in step c, the uniformly mixed specific steps are as follows:
After two kinds of powders mixing after high temperature is deactivated, then successively passes through coarse crushing, is ground up, sieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910070012.4A CN109678530B (en) | 2019-01-24 | 2019-01-24 | Isolation powder and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910070012.4A CN109678530B (en) | 2019-01-24 | 2019-01-24 | Isolation powder and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109678530A true CN109678530A (en) | 2019-04-26 |
| CN109678530B CN109678530B (en) | 2021-07-23 |
Family
ID=66194515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910070012.4A Active CN109678530B (en) | 2019-01-24 | 2019-01-24 | Isolation powder and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109678530B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115611637A (en) * | 2022-08-19 | 2023-01-17 | 江苏方达正塬电子材料科技有限公司 | Isolation powder and preparation method thereof |
| CN117423549A (en) * | 2023-10-18 | 2024-01-19 | 广东微容电子科技有限公司 | MLCC and MLCC manufacturing method for improving raw inverted adhesive sheet |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145350A (en) * | 1990-10-04 | 1997-03-19 | 纳幕尔杜邦公司 | Method for reducing shrinkage during firing of ceramic bodies |
| UA65551C2 (en) * | 1996-12-27 | 2004-04-15 | Онера - (Офіс Насьональ Д'Етюд Е Де Решерш Аероспасьяль) | A process for manufacture of sintered article of construction ceramic material based on aluminum nitride |
| CN101570437A (en) * | 2009-04-30 | 2009-11-04 | 潮州三环（集团）股份有限公司 | Method for continuous low temperature sintering of high thermal coefficient AIN ceramics and product thereof |
| CN102557646A (en) * | 2011-12-23 | 2012-07-11 | 浙江工业大学 | Preparation method of AlN ceramic substrate |
| CN105936595A (en) * | 2015-11-28 | 2016-09-14 | 衡阳凯新特种材料科技有限公司 | Silicon nitride heating element and preparation method thereof |
| CN108516838A (en) * | 2018-04-25 | 2018-09-11 | 浙江正天新材料科技有限公司 | Method for sintering aluminum nitride ceramic substrate in graphite furnace |
-
2019
- 2019-01-24 CN CN201910070012.4A patent/CN109678530B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1145350A (en) * | 1990-10-04 | 1997-03-19 | 纳幕尔杜邦公司 | Method for reducing shrinkage during firing of ceramic bodies |
| UA65551C2 (en) * | 1996-12-27 | 2004-04-15 | Онера - (Офіс Насьональ Д'Етюд Е Де Решерш Аероспасьяль) | A process for manufacture of sintered article of construction ceramic material based on aluminum nitride |
| CN101570437A (en) * | 2009-04-30 | 2009-11-04 | 潮州三环（集团）股份有限公司 | Method for continuous low temperature sintering of high thermal coefficient AIN ceramics and product thereof |
| CN102557646A (en) * | 2011-12-23 | 2012-07-11 | 浙江工业大学 | Preparation method of AlN ceramic substrate |
| CN105936595A (en) * | 2015-11-28 | 2016-09-14 | 衡阳凯新特种材料科技有限公司 | Silicon nitride heating element and preparation method thereof |
| CN108516838A (en) * | 2018-04-25 | 2018-09-11 | 浙江正天新材料科技有限公司 | Method for sintering aluminum nitride ceramic substrate in graphite furnace |
Non-Patent Citations (4)
| Title |
|---|
| 傅仁利 等: "氮化铝陶瓷低温烧结过程中的液相迁移与表层晶粒生长", 《中国有色金属学报》 * |
| 徐军: "《激光材料科学与技术前沿》", 30 April 2007, 上海交通大学出版社 * |
| 胡永达: "氮化铝共烧基板金属化及其薄膜金属化特性研究", 《电子元件与材料》 * |
| 门传玲 等: "新型氮化铝埋层上硅结构的应力特性", 《同济大学学报》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115611637A (en) * | 2022-08-19 | 2023-01-17 | 江苏方达正塬电子材料科技有限公司 | Isolation powder and preparation method thereof |
| CN115611637B (en) * | 2022-08-19 | 2023-10-27 | 江苏方达正塬电子材料科技有限公司 | Isolation powder and preparation method thereof |
| CN117423549A (en) * | 2023-10-18 | 2024-01-19 | 广东微容电子科技有限公司 | MLCC and MLCC manufacturing method for improving raw inverted adhesive sheet |
| CN117423549B (en) * | 2023-10-18 | 2024-05-14 | 广东微容电子科技有限公司 | MLCC and MLCC manufacturing method for improving raw inverted adhesive sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109678530B (en) | 2021-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101386539B (en) | Aluminium nitride ceramics material and preparation method thereof | |
| CN109400175A (en) | A kind of preparation method of high thermal conductivity silicon nitride ceramics substrate material | |
| EP4269372A1 (en) | High-thermal-conductivity silicon nitride ceramic insulating plate and preparation method therefor | |
| CN102826853A (en) | High-strength aluminum nitride ceramic substrate and manufacturing method thereof | |
| CN111196728B (en) | High-strength, high-toughness and high-thermal-conductivity silicon nitride ceramic material and preparation method thereof | |
| CN113185268B (en) | Preparation method of alumina ceramic material and alumina ceramic substrate | |
| CN112608154A (en) | Silicon nitride ceramic slurry and preparation method and application thereof | |
| CN112939607B (en) | High-thermal-conductivity aluminum nitride ceramic and preparation method thereof | |
| CN115028460B (en) | Preparation method of high-heat-conductivity silicon nitride ceramic substrate | |
| CN109678530A (en) | A kind of insulating powder and preparation method thereof | |
| CN115028461A (en) | Method for preparing high-thermal-conductivity silicon nitride ceramic substrate through silicon powder tape casting | |
| CN102531396B (en) | Low-temperature co-fired glass ceramic composites and preparation method thereof | |
| CN109627014B (en) | Si with high strength and high thermal conductivity3N4Ceramic material and preparation method thereof | |
| CN112759402A (en) | Preparation process of high-strength black aluminum nitride ceramic | |
| CN111302809B (en) | High-thermal-conductivity and high-strength silicon nitride ceramic material and preparation method thereof | |
| CN1332910C (en) | Method for preparing high heatconducting aluminium nitride ceramic base sheets through powder metallurgical technique | |
| CN111196730B (en) | High-thermal-conductivity silicon nitride ceramic material and preparation method thereof | |
| CN114702306B (en) | Preparation method of 95 alumina ceramic substrate and product thereof | |
| KR20160102799A (en) | Alumina ceramics composition having low sintering temperature and manufacturing process thereof | |
| CN115650635A (en) | High-performance rare earth nano-coating prepared from polishing powder waste and preparation method thereof | |
| CN112608155A (en) | Method for high-temperature co-firing of metal and silicon nitride ceramic composite substrate | |
| CN114014682A (en) | Grinding-free simultaneous sintering method for double surfaces of ceramic copper-clad plate | |
| CN112573903B (en) | Aluminum oxide composite substrate material and preparation method thereof | |
| CN112142475B (en) | High-density/high-thermal-conductivity AlN ceramic for electronic packaging and preparation method thereof | |
| CN115611637B (en) | Isolation powder and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |